CN109412016A - The vertical-cavity-face emitting semiconductor laser for the hollow light that is vortexed can be emitted - Google Patents
The vertical-cavity-face emitting semiconductor laser for the hollow light that is vortexed can be emitted Download PDFInfo
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- CN109412016A CN109412016A CN201811252788.XA CN201811252788A CN109412016A CN 109412016 A CN109412016 A CN 109412016A CN 201811252788 A CN201811252788 A CN 201811252788A CN 109412016 A CN109412016 A CN 109412016A
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- lower electrode
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- bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18325—Between active layer and substrate
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The vertical-cavity-face emitting semiconductor laser that the hollow light that is vortexed can be emitted belongs to semiconductor laser field.The prior art is using the hollow light of solid state laser output vortex, and device volume is larger, and intra-cavity phase conversion device structure is complicated.The present invention is successively top electrode, ohmic contact layer, upper distribution Bragg reflector, oxide confining layer, active gain area, lower distribution Bragg reflector, substrate, lower electrode from top to bottom；Ohmic contact layer, upper distribution Bragg reflector and active gain region layer, which stack, constitutes a hollow cylinder；There is high resistance area in the hollow cylinder；It is characterized in that, top electrode is located at the regional area of ohmic contact layer top surface edge, lower electrode is located at the regional area of substrate lower surface edge, the geometric center of top electrode, the geometric center of lower electrode line intersect with laser axis, the central angle θ ' of top electrode, lower electrode central angle θ " within the scope of 30 °~90 °.
Description
Technical field
The present invention relates to the vertical-cavity-face emitting semiconductor lasers that one kind can emit the hollow light that is vortexed, and belong to semiconductor
Field of laser device technology.
Background technique
Vortex light is the light beam with screw type phase front and phase singularity, can be with the side of propagation before communication process medium wave
To for axis, in a helical pattern detour propagate.The orbital angular momentum and dark hollow nature that can use vortex light field, in optics
Microcosmic particle is captured, controlled and rotated in micro- manipulation with vortex light, and uses vortex optical storage data, carries out the volume of information
Code is decoded, is recorded and transmitted, and measures the miniature deformation of object.
Obtain vortex light existing method mainly have geometric optics mode conversion method, spiral phase plate method, calculate holography method,
Method is directly exported based on programmable liquid crystal spatial light modulation method, hollow waveguide method and laser.Laser therein is direct
Output method is closer to the present invention, and obtaining is also the hollow light that is vortexed, and compared to vortex light, the hollow light center light intensity that is vortexed is zero
Region it is larger, dark hollow nature is stronger.Hollow light be vortexed other than the purposes with vortex light, in material processing, oversubscription
Distinguishing the fields such as microscope, quantum cryptography and quantum communications also has its purposes.The laser directly exports the laser that method uses
For solid state laser, device volume is larger, and intra-cavity phase conversion device structure is complicated.In contrast, semiconductor laser is in device
There is its advantage in terms of part volume.However, existing semiconductor laser seems numerous, it can not emit vortex light directly but
's.Distribution Bragg reflector vertical-cavity-face emitting semiconductor in a kind of ring structure of Patent No. ZL201510113902.0
Laser also only can directly emit hollow laser beam, rather than the hollow light that is vortexed.
Summary of the invention
In order to obtain a kind of laser that is small in size, can directly exporting the hollow light that is vortexed, we have invented one kind can
The vertical-cavity-face emitting semiconductor laser of the hollow light of transmitting vortex.
The vertical-cavity-face emitting semiconductor laser that can emit the hollow light that is vortexed of the present invention is as shown in Figure 1, Figure 3, from
It is successively top electrode 1, ohmic contact layer 2, upper distribution Bragg reflector 3, oxide confining layer 4, active gain area under above
5, lower distribution Bragg reflector 6, substrate 7, lower electrode 8；Ohmic contact layer 2, upper distribution Bragg reflector 3 and active increasing
One hollow cylinder of the beneficial composition stacked together of area 5, the internal diameter of the hollow cylinder is 85~95 μm, outer diameter is 115~125 μm；
The shape of oxide confining layer 4 is annular, and the width of the annular is 3~5 μm, the outer diameter and the hollow cylinder of the annular
Outer diameter it is identical；There is high resistance area 9 in the hollow cylinder, the bottom surface of high resistance area 9 is contacted with lower distribution Bragg reflector 6,
The height of the top surface of high resistance area 9 is higher than the interior mirror surface of upper distribution Bragg reflector 3, lower than upper distribution Bragg reflector 3
Outer mirror surface；It is characterized in that, top electrode 1 is located at the regional area of 2 top surface edge of ohmic contact layer, lower electrode 8 is located at substrate 7
The regional area of lower surface edge, the geometric center of top electrode 1, line and the laser axis phase of the geometric center of lower electrode 8
Hand over, as shown in Figure 1 to 4, the central angle θ ' of top electrode 1, lower electrode central angle θ " within the scope of 30 °~90 °.
The present invention it has technical effect that, during electric current is injected from top electrode 1, powers on since lower electrode 8 is located at
Pole 1 to downwards, electric current need along the vertical direction diagonal line flow, meanwhile, heart district domain depositing there are also high resistance area 9 in the laser
So that electric current is not to be uniformly distributed injection, but detour high resistance area 9 is injected with swirling manner, so that in active gain
The heterogeneity that Injection Current is formed in area 5 rotates injection effect, to generate vortex gain mode effect in active gain area 5
Fruit, and then form the output of vortex hollow beam.Compared to solid state laser, the much smaller of semiconductor laser, vertically
Therefore the structure of cavity-face emitting semiconductor laser does not also become complicated.
Of the invention one incidentally has technical effect that, since top electrode 1, lower electrode 8 are located at up and down direction in laser
Diagonal line both ends, and the line (with the diagonal line) and laser of the geometric center of top electrode 1, the geometric center of lower electrode 8
Axis intersection, therefore, the electric current injected from top electrode 1 are actually to inject in two swirl directions clockwise, counterclockwise, this
Also imply that also swirl direction is also two to the hollow light of the vortex of transmitting, as shown in figure 3, therefore, the laser of the present invention emits
Vortex hollow beam tool there are two orbital angular momentum, the section energy density of light is more uniform, and such hollow light that is vortexed exists
It operates more acurrate in optical micromanipulation, more information can be carried in other application.
Detailed description of the invention
Fig. 1 is the vertical-cavity-face emitting semiconductor laser structure main view section view that can emit the hollow light that is vortexed of the present invention
Schematic diagram.Fig. 2, Fig. 4 are that the vertical-cavity-face emitting semiconductor laser structure that can emit the hollow light that is vortexed of the present invention is overlooked
Schematic diagram, the figure further express top electrode, the position of lower electrode, shape and scale.Fig. 3 is that the present invention can emit vortex
The vertical-cavity-face emitting semiconductor laser structure of hollow light and out light form stereoscopic schematic diagram, the figure are attached as making a summary simultaneously
Figure.
Specific embodiment
The vertical-cavity-face emitting semiconductor laser that can emit the hollow light that is vortexed of the present invention is as shown in Figure 1, Figure 3, from
It is successively top electrode 1, ohmic contact layer 2, upper distribution Bragg reflector 3, oxide confining layer 4, active gain area under above
5, lower distribution Bragg reflector 6, substrate 7, lower electrode 8；Ohmic contact layer 2, upper distribution Bragg reflector 3 and active increasing
One hollow cylinder of the beneficial composition stacked together of area 5, the internal diameter of the hollow cylinder is 85~95 μm, outer diameter is 115~125 μm；
The shape of oxide confining layer 4 is annular, and the width of the annular is 3~5 μm, the outer diameter and the hollow cylinder of the annular
Outer diameter it is identical；There is high resistance area 9 in the hollow cylinder, the bottom surface of high resistance area 9 is contacted with lower distribution Bragg reflector 6,
The height of the top surface of high resistance area 9 is higher than the interior mirror surface of upper distribution Bragg reflector 3, lower than upper distribution Bragg reflector 3
Outer mirror surface.Top electrode 1 is located at the regional area of 2 top surface edge of ohmic contact layer, and lower electrode 8 is located at 7 lower surface edge of substrate
Regional area, the geometric center of top electrode 1, the geometric center of lower electrode 8 line intersect with laser axis, as Fig. 1~
Shown in Fig. 4, the central angle θ ' of top electrode 1, lower electrode central angle θ " within the scope of 30 °~90 °.Top electrode 1, lower electrode 8
Shape be arch, as shown in Fig. 2, the annular for central angle within the scope of 30 °~90 °, as shown in Figure 4.
Claims (2)
- It is successively top electrode from top to bottom 1. one kind can emit the vertical-cavity-face emitting semiconductor laser for the hollow light that is vortexed (1), ohmic contact layer (2), upper distribution Bragg reflector (3), oxide confining layer (4), active gain area (5), lower distribution Bragg mirror (6), substrate (7), lower electrode (8)；Ohmic contact layer (2), upper distribution Bragg reflector (3) and active Gain region (5) one hollow cylinder of composition stacked together, the internal diameter of the hollow cylinder is 85~95 μm, outer diameter is 115~125 μm；The shape of oxide confining layer (4) is annular, and the width of the annular is 3~5 μm, the outer diameter and the sky of the annular The outer diameter of heart cylinder is identical；Have in the hollow cylinder high resistance area (9), the bottom surface of high resistance area (9) and lower distribution bragg are anti- Mirror (6) contact is penetrated, the height of the top surface of high resistance area (9) is higher than the interior mirror surface of upper distribution Bragg reflector (3), is lower than upper distribution The outer mirror surface of Bragg mirror (3)；It is characterized in that, top electrode (1) is located at the part of ohmic contact layer (2) top surface edge Region, lower electrode (8) are located at the regional area of substrate (7) lower surface edge, the geometric center of top electrode (1), lower electrode (8) The line of geometric center intersects with laser axis, and the central angle (θ ') of top electrode (1), the central angle (θ ") of lower electrode exist Within the scope of 30 °~90 °.
- 2. the vertical-cavity-face emitting semiconductor laser according to claim 1 that the hollow light that is vortexed can be emitted, feature It is, top electrode (1), the shape of lower electrode (8) are arch, or the annular for central angle within the scope of 30 °~90 °.
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| CN201811252788.XA CN109412016B (en) | 2018-10-25 | 2018-10-25 | The vertical-cavity-face emitting semiconductor laser for the hollow light that is vortexed can be emitted |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129952A (en) * | 2019-12-25 | 2020-05-08 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser with distributed Bragg reflector on asymmetric annular structure |
| CN111370994A (en) * | 2020-03-18 | 2020-07-03 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser with upper electrode and middle electrode pair distributed in angle |
| CN112490851A (en) * | 2020-11-30 | 2021-03-12 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser with upper and lower electrodes arranged in staggered manner |
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| DE10243944A1 (en) * | 2002-09-20 | 2004-04-01 | Universität Hannover | Semiconductor laser used as a VCEL comprises a laser-active layer formed between barrier layers, contacts for connecting to a voltage source and for introducing charge carriers via the barrier layers into the laser-active layers |
| EP1501134A1 (en) * | 2003-07-25 | 2005-01-26 | Hitachi, Ltd. | LED with a lateral pn-junction and a structure to control the emission of photons |
| CN101202420A (en) * | 2007-01-23 | 2008-06-18 | 河北工业大学 | Emitting laser for etching top end non-doping intrinsic layer asymmetric metal membrane vertical cavity surface |
| CN104767120A (en) * | 2015-03-16 | 2015-07-08 | 长春理工大学 | Vertical-cavity surface-emitting semiconductor laser of distributed Bragg reflectors on annular structures |
-
2018
- 2018-10-25 CN CN201811252788.XA patent/CN109412016B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10243944A1 (en) * | 2002-09-20 | 2004-04-01 | Universität Hannover | Semiconductor laser used as a VCEL comprises a laser-active layer formed between barrier layers, contacts for connecting to a voltage source and for introducing charge carriers via the barrier layers into the laser-active layers |
| EP1501134A1 (en) * | 2003-07-25 | 2005-01-26 | Hitachi, Ltd. | LED with a lateral pn-junction and a structure to control the emission of photons |
| CN101202420A (en) * | 2007-01-23 | 2008-06-18 | 河北工业大学 | Emitting laser for etching top end non-doping intrinsic layer asymmetric metal membrane vertical cavity surface |
| CN104767120A (en) * | 2015-03-16 | 2015-07-08 | 长春理工大学 | Vertical-cavity surface-emitting semiconductor laser of distributed Bragg reflectors on annular structures |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129952A (en) * | 2019-12-25 | 2020-05-08 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser with distributed Bragg reflector on asymmetric annular structure |
| CN111129952B (en) * | 2019-12-25 | 2020-12-22 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser with distributed Bragg reflector on asymmetric annular structure |
| CN111370994A (en) * | 2020-03-18 | 2020-07-03 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser with upper electrode and middle electrode pair distributed in angle |
| CN112490851A (en) * | 2020-11-30 | 2021-03-12 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser with upper and lower electrodes arranged in staggered manner |
| CN112490851B (en) * | 2020-11-30 | 2022-07-12 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser with upper and lower electrodes arranged in staggered manner |
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