CN103178443B - Vertical-cavity surface-emitting laser capable of automatically focusing - Google Patents
Vertical-cavity surface-emitting laser capable of automatically focusing Download PDFInfo
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- CN103178443B CN103178443B CN201310066180.9A CN201310066180A CN103178443B CN 103178443 B CN103178443 B CN 103178443B CN 201310066180 A CN201310066180 A CN 201310066180A CN 103178443 B CN103178443 B CN 103178443B
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Abstract
The invention discloses a vertical-cavity surface-emitting laser capable of automatically focusing, and belongs to the field of semiconductor lasers. The vertical-cavity surface-emitting laser capable of automatically focusing comprises a P-type DBR (distributed Bragg reflective) layer, an active layer, an N-type DBR layer, a lining layer, a lower electrode wrapped on the P-type DBR layer, and an upper electrode laid on the lining layer. A part, covered on a light emitting window, of the upper electrode is shaped in a concentric ring or a structure with unequally spaced grid bars or crossed grid bars, the upper electrode with the above structure can be formed via the lift-off technology by one step, with the upper electrode, output laser light beams can be focused into a point light spot, or a linear light spot or a cross light spot without additionally adding a light beam shaping device, laser power intensity is greatly enhanced partly, and wide application requirements are met. The vertical-cavity surface-emitting laser capable of automatically focusing is simple in manufacturing technology, good in repeatability and easy to popularize.
Description
Technical field
The invention belongs to field of semiconductor lasers, be specifically related to a kind of automatic focus vertical cavity surface emitting laser.
Background technology
Vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL) be a kind of Semiconductor Laser, compare with edge-emission semiconductor laser and there is cheap for manufacturing cost, high reliability, especially VCSEL can export circular symmetry hot spot, and very easily by integrated its power output that improves of two dimension, the power output level of VCSEL has reached practical level at present.
Because VCSEL light direction is perpendicular to its substrate direction, improving the most direct approach of its power output is exactly the area that increases luminous zone, it is only generally kilowatt every square centimeter of magnitude that yet the increase of luminous zone area causes the power density of its Output of laser, and current commercial edge-emission semiconductor laser power density has reached every square centimeter of magnitude of megawatt.In many applications, not only need LASER Light Source to there is high-output power, more require it to there is high output power density, especially require to form the laser facula with high power density in certain plane apart from light source luminescent surface certain distance.
At present, the method for raising VCSEL output power density mainly contains two kinds:
A kind of method is to utilize additional light-beam forming unit to realize the convergence to laser beam, the technical difficulty of this method is lower, but the repeatability that its light beam is assembled can be debug and the impact of machining error, and some application as laser-processing system in, sometimes need by the Output of laser light beam of VCSEL converge to space middle distance light output surface far away a bit or on straight line, although this also can, by adopting a series of light-beam forming units to realize, can increase the complex structure degree of whole light-source system greatly.
The another kind of method that improves VCSEL power density is on laser window surface, to make lenticule by micro-nano process technologies such as dry etchings, the convergence of realization to VCSEL Emission Lasers, this method can control to nanometer scale by accuracy by micro-nano process technology, therefore there is good machining reproducibility, but be only applicable to small-bore VCSEL device, power output is only generally milliwatt magnitude, is difficult to obtain high-output power and high power density simultaneously.
Summary of the invention
In order to solve existing vertical cavity surface emitting laser, laser beam is converged to while forming high power density laser hot spot apart from certain plane of light-emitting area space far away realizing by light-beam forming unit, apparatus for shaping causes system too complicated, and light beam is assembled repeatability and is subject to machining and debugs impact, and surperficial integrated micro lens technology is only applicable to small-bore VCSEL, device power output is only the technical problem of milliwatt magnitude, and the present invention proposes a kind of automatic focus vertical cavity surface emitting laser.
The technical scheme that technical solution problem of the present invention is taked is as follows:
A kind of automatic focus vertical cavity surface emitting laser comprises: bottom electrode, P type DBR layer, active layer, N-type DBR layer, substrate layer and top electrode; N-type DBR layer growth is in the lower end of substrate layer, and growing in turn in the lower end of N-type DBR layer has active layer, P type DBR layer and bottom electrode; Described top electrode grows in the upper surface of substrate layer; Bottom electrode, P type DBR layer and active layer form P type semiconductor table top jointly; Described top electrode is annular concentric structure or unequal-interval grid strip structure or the grid strip structure that intersects in the part that covers laser light-emitting window.
The P type semiconductor table top corresponding with annular concentric structure top electrode is circular configuration, is rectangular configuration with unequal-interval grid strip structure or P type semiconductor table top corresponding to grid strip structure top electrode that intersect.
The invention has the beneficial effects as follows: the top electrode of this vertical cavity surface emitting laser has the function of electric current injection and laser beam focusing concurrently, by the structure of its top electrode and the P type semiconductor table top that mates with top electrode is regulated, the laser beam of laser can be focused to point-like or wire or cross-shaped high power density laser hot spot at desired location automatic shaping, can meet application demand widely; This laser manufacturing process is simple, reproducible, easily promotes.
Accompanying drawing explanation
Fig. 1 is the outward appearance end view of a kind of automatic focus vertical cavity surface emitting laser of the present invention.
Fig. 2 is very annular concentric and the P type semiconductor table top laser vertical view when circular that powers in the present invention; In figure, black is substrate layer, and white is top electrode.
Fig. 3 is the longitudinal sectional drawing of Fig. 2.
Fig. 4 is the laser vertical view powering in the present invention when very unequal-interval grizzly bar shape and P type semiconductor table top are rectangle; In figure, black is substrate layer, and white is top electrode.
Fig. 5 is the longitudinal sectional drawing of Fig. 4.
Fig. 6 powers in the present invention very to intersect grizzly bar shape and the P type semiconductor table top laser vertical view while being rectangle.In figure, black is substrate layer, and white is top electrode.
Fig. 7 is the longitudinal sectional drawing of Fig. 6.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further details.
As shown in Figures 1 to 7, a kind of automatic focus vertical cavity surface emitting laser of the present invention comprises: bottom electrode 1, P type DBR layer 2, active layer 3, N-type DBR layer 4, substrate layer 5 and top electrode 6.N-type DBR layer 4 grows in the lower end of substrate layer 5, and growing in turn in the lower end of N-type DBR layer 4 has active layer 3, P type DBR layer 2 and bottom electrode 1.Top electrode 6 grows in the upper surface of substrate layer 5.The common P type semiconductor table top that forms of bottom electrode 1, P type DBR layer 2 and active layer 3.
While making laser of the present invention: the shape of first utilizing dry etching processing P type DBR layer 2 according to desired light spot shape, in the time of need to obtaining circular light spot, P type DBR layer 2 and the common P type semiconductor table top forming of active layer 3 are made to circle, in the time of need to obtaining wire or right-angled intersection shaped laser spot, P type semiconductor table top is made to rectangle, then, by wet oxidation method, on P type DBR layer 2, form desired cirque structure, unequal-interval grid strip structure or the grid strip structure oxide-aperture that intersects, below P type DBR layer 2, bottom electrode 1 is made in growth afterwards, by double-sided alignment photoetching process, on the upper surface of substrate layer 5, utilize again photoresist to form and desired cirque structure, the coupling figure of unequal-interval grid strip structure or intersection grizzly bar shape inverted configuration, then by evaporation growth method, according to its coupling figure, on the upper surface of substrate layer 5, make top electrode 6, finally by lift-off stripping technology, top electrode 6 is processed to form to desired cirque structure, unequal-interval grid strip structure or the grid strip structure that intersects.
Top electrode 6 is annular concentric or unequal-interval grizzly bar or the structure of grid that intersects in the part that covers laser light-emitting window.Top electrode 6 has electric current concurrently and injects and laser beam focusing effect, and the P type semiconductor table top corresponding with the shape of top electrode 6 is circle or rectangular configuration.Top electrode 6 material therefors are AuGeNi/Au.Bottom electrode 1 material therefor is Ti/Au or Ti/Pt/Au.
The light beam of launching with the vertical cavity surface emitting laser of cirque structure can be focused to a bit in space, the light beam of launching with the vertical cavity surface emitting laser of unequal-interval grid strip structure can be focused to straight line in space, and the light beam of launching with the vertical cavity surface emitting laser of intersection grid strip structure intersection grid strip structure can be focused to a cross hot spot in space.
When concrete application laser of the present invention converges to by the laser beam with high power density the laser facula that certain plane of distant space forms desired annular, unequal-interval grizzly bar shape or intersect grizzly bar shape, should select and there is the top electrode 6 that matches with desired light spot shape and the laser of P type semiconductor mesa structure.To there is diffraction in the laser beam of its laser transmitting, its corresponding diffractive light field, by the facula position place stack in expection, produces the hot spot of anticipated shape, realizes thus the focusing to laser beam when by top electrode 6.
Automatic focus vertical cavity surface emitting laser of the present invention can form point-like, wire or cross-shaped high power density laser hot spot in free space, can meet application demand widely.
Claims (2)
1. an automatic focus vertical cavity surface emitting laser, comprises bottom electrode (1), P type DBR layer (2), active layer (3), N-type DBR layer (4), substrate layer (5) and top electrode (6); It is characterized in that: N-type DBR layer (4) grows in the lower end of substrate layer (5), growing in turn in the lower end of N-type DBR layer (4) has active layer (3), P type DBR layer (2) and bottom electrode (1); Described top electrode (6) grows in the upper surface of substrate layer (5); Bottom electrode (1), P type DBR layer (2) and active layer (3) form P type semiconductor table top jointly; Described top electrode (6) is annular concentric structure or unequal-interval grid strip structure or the grid strip structure that intersects in the part that covers laser light-emitting window.
2. a kind of automatic focus vertical cavity surface emitting laser as claimed in claim 1, it is characterized in that: the P type semiconductor table top corresponding with annular concentric structure top electrode (6) is circular configuration, is rectangular configuration with unequal-interval grid strip structure or P type semiconductor table top corresponding to grid strip structure top electrode (6) that intersect.
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| CN201310066180.9A CN103178443B (en) | 2013-03-01 | 2013-03-01 | Vertical-cavity surface-emitting laser capable of automatically focusing |
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| CN201310066180.9A CN103178443B (en) | 2013-03-01 | 2013-03-01 | Vertical-cavity surface-emitting laser capable of automatically focusing |
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| CN103178443B true CN103178443B (en) | 2014-10-15 |
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| CN107069423B (en) * | 2017-05-19 | 2020-05-15 | 长春理工大学 | Preparation method of vertical cavity surface emitting semiconductor laser |
| CN109326958A (en) * | 2019-01-02 | 2019-02-12 | 常州纵慧芯光半导体科技有限公司 | The high-power vertical cavity surface emitting laser of metal grill |
| CN110994359A (en) * | 2019-12-13 | 2020-04-10 | 武汉光安伦光电技术有限公司 | Wet oxidation process for improving oxidation uniformity of vertical cavity surface emitting laser |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179374A (en) * | 1988-01-05 | 1989-07-17 | Res Dev Corp Of Japan | Junction semiconductor light emitting element |
| JPH07321405A (en) * | 1994-05-30 | 1995-12-08 | Gijutsu Kenkyu Kumiai Shinjiyouhou Shiyori Kaihatsu Kiko | Surface emitting semiconductor laser and its control method |
| CN102637999A (en) * | 2012-04-17 | 2012-08-15 | 中国科学院半导体研究所 | Sub-wavelength self-focusing radial polarization vertical-cavity surface-emitting laser and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3547344B2 (en) * | 1999-08-24 | 2004-07-28 | シャープ株式会社 | Semiconductor light emitting device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179374A (en) * | 1988-01-05 | 1989-07-17 | Res Dev Corp Of Japan | Junction semiconductor light emitting element |
| JPH07321405A (en) * | 1994-05-30 | 1995-12-08 | Gijutsu Kenkyu Kumiai Shinjiyouhou Shiyori Kaihatsu Kiko | Surface emitting semiconductor laser and its control method |
| CN102637999A (en) * | 2012-04-17 | 2012-08-15 | 中国科学院半导体研究所 | Sub-wavelength self-focusing radial polarization vertical-cavity surface-emitting laser and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 基于亚波长金属光栅980nm高功率垂直腔面发射激光器偏振控制;张祥伟等;《发光学报》;20120930;全文 * |
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Effective date of registration: 20190911 Address after: Room E305, 1759 Mingxi Road, Beihu Science and Technology Development Zone, Changchun City, Jilin Province, 130000 Patentee after: Changchun Zhongke Changguang Space-time Photoelectric Technology Co., Ltd. Address before: 130033 southeast Lake Road, Jilin, Changchun, No. 3888 Patentee before: Changchun Inst. of Optics and Fine Mechanics and Physics, Chinese Academy of Sci |