CN109449751A - Exocoel area source VCSEL and its application - Google Patents
Exocoel area source VCSEL and its application Download PDFInfo
- Publication number
- CN109449751A CN109449751A CN201811633011.8A CN201811633011A CN109449751A CN 109449751 A CN109449751 A CN 109449751A CN 201811633011 A CN201811633011 A CN 201811633011A CN 109449751 A CN109449751 A CN 109449751A
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- CN
- China
- Prior art keywords
- area source
- exocoel
- side electrode
- vcsel
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/69—Details of refractors forming part of the light source
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention provides a kind of exocoel area source VCSEL and its application, wherein the exocoel area source VCSEL includes: area source and the lens positioned at the area source light emission side；The area source includes: the face-N electrode, substrate layer, epitaxial layer ,-p side electrode, described-p side electrode, epitaxial layer, substrate layer, the face-N electrode are cascading from top to bottom, described-p side electrode includes: upper dbr structure, active layer structure and lower dbr structure, the upper dbr structure, active layer structure and lower dbr structure are cascading from top to bottom, the size of the lens is corresponding with the light-emitting area of the area source, the light that described-p side electrode issues uniform after the adjusting of the lens.Exocoel area source VCSEL of the invention utilizes the adjustment effect of lens on light beam, converts low-order mode light beam for high-order mode light beam, and then reduce beam divergence angle, reduces bandwidth.
Description
Technical field
The present invention relates to field of laser device technology more particularly to a kind of exocoel area source VCSEL and its applications.
Background technique
Currently, the transverse mode of widely used vertical cavity surface emitting laser (VCSEL) is commonly high-order mode, exist as follows
Problem: hot spot is uneven, and light distribution dispersion, beam divergence angle is big, with wide etc., thus to application process cause it is many not
Just.Therefore, in view of the above-mentioned problems, it is necessary to propose further solution.
Summary of the invention
The present invention is intended to provide a kind of exocoel area source VCSEL and its application, to overcome the deficiencies in the prior art.
In order to solve the above technical problems, the technical scheme is that
A kind of exocoel area source VCSEL comprising: area source and the lens positioned at the area source light emission side；
The area source includes: the face-N electrode, substrate layer, epitaxial layer ,-p side electrode, described-p side electrode, epitaxial layer, lining
Bottom, the face-N electrode are cascading from top to bottom, described-p side electrode include: upper dbr structure, active layer structure and under
Dbr structure, the upper dbr structure, active layer structure and lower dbr structure are cascading from top to bottom, the lens
Size is corresponding with the light-emitting area of the area source, and the light that described-p side electrode issues is uniform after the adjusting of the lens
Outgoing.
As the improvement of exocoel area source VCSEL of the invention, the substrate layer is semi-insulated semiconductor substrate layer.
As the improvement of exocoel area source VCSEL of the invention, the epitaxial layer is highly doped semiconductor epitaxial layers.
As the improvement of exocoel area source VCSEL of the invention, described-p side electrode is at least one, described-p side electrode
When being multiple, multiple-p side electrode is arranged in the form of an array on the epitaxial layer.
As the improvement of exocoel area source VCSEL of the invention, when described-p side electrode is multiple, multiple-p side electrode is logical
Metal electrode is crossed to be connected.
As the improvement of exocoel area source VCSEL of the invention, the multiple luminescence chip is with non-homogeneous or uniform array
Mode is arranged on the semiconductor epitaxial layers.Array structure suitable for unitary electrode driving or the driving of multi-electrode piecemeal.
As the improvement of exocoel area source VCSEL of the invention, it is suitable for any wavelength period, any semiconductor material system
Surface-emitting laser (VCSEL).
As the improvement of exocoel area source VCSEL of the invention, outer-cavity structure is suitable for random polarization structure, or polarization control
The structure of system.
As the improvement of exocoel area source VCSEL of the invention, the exocoel area source VCSEL further includes optical bracket,
The lens are set to the light emission side of the area source by the optical bracket, and the lens are provided on the optical bracket
Mounting groove.
In order to solve the above technical problems, the technical scheme is that
A kind of 3-D imaging system comprising exocoel area source VCSEL as described above.
In order to solve the above technical problems, the technical scheme is that
A kind of laser radar comprising exocoel area source VCSEL as described above.
In order to solve the above technical problems, the technical scheme is that
A kind of laser lighting lamp comprising exocoel area source VCSEL as described above.
Compared with prior art, the beneficial effects of the present invention are: exocoel area source VCSEL of the invention utilizes lens on light
The adjustment effect of beam converts low-order mode light beam for high-order mode light beam, and then reduces beam divergence angle, reduces bandwidth.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The some embodiments recorded in invention, for those of ordinary skill in the art, without creative efforts,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 is the floor map of mono- specific embodiment of exocoel area source VCSEL of the invention；
Fig. 2 is the schematic diagram of a layer structure of area source in Fig. 1.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in Figure 1, 2, the present invention provides a kind of exocoel area source VCSEL comprising: area source 1 and it is located at described
The lens 2 of 1 light emission side of area source.
The area source 1 is for projecting laser comprising: the face-N electrode 11, substrate layer 12, epitaxial layer 13 ,-p side electrode
14.Wherein, described-p side electrode 14, epitaxial layer 13, substrate layer 12, the face-N electrode 11 are cascading from top to bottom.It is preferred that
Ground, the substrate layer 12 use semi-insulated semiconductor substrate layer.The epitaxial layer 13 uses highly doped semiconductor epitaxial layers.
It is described-p side electrode 14 use VCSEL laser chip, thus described-p side electrode 14 include: upper dbr structure 141,
Active layer structure 142 and lower dbr structure 143.Wherein, the upper dbr structure 141, active layer structure 142 and lower DBR knot
Structure 143 is cascading from top to bottom.
Further, described-p side electrode 14 is at least one, in order to obtain enough laser intensities, described-p side electrode
14 can be multiple, at this point, multiple-p side electrode 14 is arranged in the form of an array on the epitaxial layer 13, while multiple faces-P electricity
Pole 14 is connected by metal electrode.
The laser that the lens 2 are used to issue the area source 1 is adjusted.Specifically, the lens 2 are located at described
The light emission side of area source 1 is converted into low-order mode by high-order mode so that the laser beam of area source 1 is after lens 2, and lens 2
To the adjustment effect of laser beam, the light distribution of laser beam can be made more uniform, and reduce beam divergence angle, reduce band
It is wide.
In order to which the laser beam issued to area source 1 is adjusted comprehensively, the size of the lens 2 and the area source 1
Light-emitting area it is corresponding, it is described-p side electrode 14 issue light after the adjusting of the lens 2 uniform.In addition, being
2 position of lens positioned at 1 light emission side of area source is kept fixed, the exocoel area source VCSEL further includes optical bracket,
The lens 2 are set to the light emission side of the area source 1 by the optical bracket.Correspondingly, being arranged on the optical bracket
There is the mounting groove of the lens 2.
Based on exocoel area source VCSEL as described above, the present invention also provides the skills of exocoel area source VCSEL application
Art scheme.
In one embodiment, the present invention provides a kind of 3-D imaging system comprising external cavity surface light as described above
Source VCSEL.
In one embodiment, the present invention provides a kind of laser radar comprising exocoel area source as described above
VCSEL。
In one embodiment, the present invention provides a kind of laser lighting lamp comprising exocoel area source as described above
VCSEL。
In conclusion exocoel area source VCSEL of the invention utilizes the adjustment effect of lens on light beam, by high-order mode light beam
It is converted into low-order mode light beam, and then reduces beam divergence angle, reduces bandwidth.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (12)
1. a kind of exocoel area source VCSEL, which is characterized in that the exocoel area source VCSEL include: area source and be located at institute
State the lens of area source light emission side；
The area source includes: the face-N electrode, substrate layer, epitaxial layer ,-p side electrode, described-p side electrode, epitaxial layer, substrate
Layer, the face-N electrode be cascading from top to bottom, described-p side electrode include: upper dbr structure, active layer structure and under
Dbr structure, the upper dbr structure, active layer structure and lower dbr structure are cascading from top to bottom, the lens
Size is corresponding with the light-emitting area of the area source, and the light that described-p side electrode issues is uniform after the adjusting of the lens
Outgoing.
2. exocoel area source VCSEL according to claim 1, which is characterized in that the substrate layer is partly led to be semi-insulated
Body substrate layer.
3. exocoel area source VCSEL according to claim 1, which is characterized in that the epitaxial layer is partly led to be highly doped
Body epitaxial layer.
4. exocoel area source VCSEL according to claim 1, which is characterized in that described-p side electrode be at least one, institute
State-p side electrode be it is multiple when, multiple-p side electrode is arranged in the form of an array on the epitaxial layer.
5. exocoel area source VCSEL according to claim 4, which is characterized in that more when described-p side electrode is multiple
A-p side electrode is connected by metal electrode.
6. exocoel area source VCSEL according to claim 4, which is characterized in that multiple luminescence chips are with non-homogeneous or equal
Even array manner is arranged on the semiconductor epitaxial layers.Array knot suitable for unitary electrode driving or the driving of multi-electrode piecemeal
Structure.
7. exocoel area source VCSEL according to claim 1, it is characterised in that it is suitable for any wavelength period, it is any partly to lead
The surface-emitting laser (VCSEL) of body material system.
8. exocoel area source VCSEL according to claim 1, it is characterised in that be suitable for random polarization structure, or polarization
The structure of control.
9. exocoel area source VCSEL according to claim 1, which is characterized in that the exocoel area source VCSEL further includes
Optical bracket, the lens are set to the light emission side of the area source by the optical bracket, are arranged on the optical bracket
There is the mounting groove of the lens.
10. a kind of 3-D imaging system, which is characterized in that the 3-D imaging system includes such as any one of claim 1 to 6 institute
The exocoel area source VCSEL stated.
11. a kind of laser radar, which is characterized in that the laser radar includes exocoel as described in any one of claim 1 to 9
Area source VCSEL.
12. a kind of laser lighting lamp, which is characterized in that the laser lighting lamp includes as described in any one of claim 1 to 9
Exocoel area source VCSEL.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811633011.8A CN109449751A (en) | 2018-12-29 | 2018-12-29 | Exocoel area source VCSEL and its application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811633011.8A CN109449751A (en) | 2018-12-29 | 2018-12-29 | Exocoel area source VCSEL and its application |
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| Publication Number | Publication Date |
|---|---|
| CN109449751A true CN109449751A (en) | 2019-03-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811633011.8A Pending CN109449751A (en) | 2018-12-29 | 2018-12-29 | Exocoel area source VCSEL and its application |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600995A (en) * | 2019-10-22 | 2019-12-20 | 北京工业大学 | High-power external cavity semiconductor laser |
| CN111244760A (en) * | 2020-01-20 | 2020-06-05 | 江西德瑞光电技术有限责任公司 | Method for adjusting divergence angle of light beam of vertical-cavity surface-emitting semiconductor laser |
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| US20050238076A1 (en) * | 2004-04-22 | 2005-10-27 | Fuji Xerox Co., Ltd. | Semiconductor laser apparatus and manufacturing method thereof |
| CN101604819A (en) * | 2008-06-11 | 2009-12-16 | 株式会社理光 | Surface emitting laser element, array, optical scanner and imaging device |
| CN103412406A (en) * | 2013-07-30 | 2013-11-27 | 中国科学院半导体研究所 | Red light semiconductor area array light source device for laser display |
| CN209544818U (en) * | 2018-12-29 | 2019-10-25 | 苏州长光华芯半导体激光创新研究院有限公司 | Exocoel area source VCSEL and its application |
-
2018
- 2018-12-29 CN CN201811633011.8A patent/CN109449751A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050238076A1 (en) * | 2004-04-22 | 2005-10-27 | Fuji Xerox Co., Ltd. | Semiconductor laser apparatus and manufacturing method thereof |
| CN101604819A (en) * | 2008-06-11 | 2009-12-16 | 株式会社理光 | Surface emitting laser element, array, optical scanner and imaging device |
| CN103412406A (en) * | 2013-07-30 | 2013-11-27 | 中国科学院半导体研究所 | Red light semiconductor area array light source device for laser display |
| CN209544818U (en) * | 2018-12-29 | 2019-10-25 | 苏州长光华芯半导体激光创新研究院有限公司 | Exocoel area source VCSEL and its application |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600995A (en) * | 2019-10-22 | 2019-12-20 | 北京工业大学 | High-power external cavity semiconductor laser |
| CN110600995B (en) * | 2019-10-22 | 2021-06-04 | 北京工业大学 | High-power external cavity semiconductor laser |
| CN111244760A (en) * | 2020-01-20 | 2020-06-05 | 江西德瑞光电技术有限责任公司 | Method for adjusting divergence angle of light beam of vertical-cavity surface-emitting semiconductor laser |
| CN111244760B (en) * | 2020-01-20 | 2021-09-10 | 江西德瑞光电技术有限责任公司 | Method for adjusting divergence angle of light beam of vertical-cavity surface-emitting semiconductor laser |
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