CN204256321U - A kind of light-operated adjustable THz wave attenuating device - Google Patents
A kind of light-operated adjustable THz wave attenuating device Download PDFInfo
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- CN204256321U CN204256321U CN201420805372.7U CN201420805372U CN204256321U CN 204256321 U CN204256321 U CN 204256321U CN 201420805372 U CN201420805372 U CN 201420805372U CN 204256321 U CN204256321 U CN 204256321U
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Abstract
The utility model provides a kind of light-operated adjustable THz wave attenuating device, and described attenuating device comprises silica-based-vanadium dioxide film, generating laser, collimating apparatus and power interface.Described silica-based-vanadium dioxide film perpendicular to terahertz wave beam direction, described generating laser is arranged on silica-based-vanadium dioxide film side, and described generating laser is connected with collimating apparatus, and described power interface is connected with generating laser.The utility model is by regulating the size of the Injection Current of power port, the luminous power that generating laser is exported occurs to regulate continuously, because silica-based-vanadium dioxide film, under generating laser effect, SEMICONDUCTOR-METAL phase transformation can occur, change the conductivity of silica-based-vanadium dioxide film, thus the absorptivity of THz wave is changed, reach the object realizing regulating transmission THz wave damping capacity.The utility model has the advantage of: structure is simple, volume is little, be easy to integrated, mainly applies to THz wave applied technical field.
Description
Technical field
The utility model relates to THz wave applied technical field, particularly relates to a kind of light-operated adjustable THz wave attenuating device.
Background technology
Along with Terahertz Technology is in the progressively development in the fields such as radar, communication, imaging, the demand of the functions such as Terahertz modulator, switch, attenuator is strengthened day by day.At present, the device of adjustable THz wave attenuating device as described in patent 200710156177.0 is complicated, installs trouble, inconvenience and other Terahertz generation hardware compatibilities.
Utility model content
In view of this, the purpose of this utility model is to provide a kind of light-operated adjustable THz wave attenuating device, and described attenuating device structure is simple, and volume is little, is easy to integrated.
The technical solution of the utility model: a kind of light-operated adjustable THz wave attenuating device, comprise silica-based-vanadium oxide film (1), generating laser (2), collimating apparatus (3) and power connection (6), described silica-based-vanadium dioxide film (1) is perpendicular to terahertz wave beam direction, generating laser (2) is arranged on silica-based-vanadium dioxide film (1) side, generating laser (2) is connected with collimating apparatus (3), the laser that generating laser (2) sends penetrates from collimating apparatus (3), be radiated on the face of silica-based-vanadium oxide film (1), and the laser facula be radiated on the face of silica-based-vanadium oxide film (1) covers the THz wave spot of transmission completely, power interface (6) is connected with generating laser (2).
Preferably, described silica-based-thickness of vanadium dioxide film (1) is 50 ~ 800nm.
Preferably, described generating laser (2) is continuous wave laser or pulsed laser or laser diode.
Preferably, the operation wavelength of described generating laser (2) is within the scope of 400nm ~ 1550nm, and Output optical power is continuously adjustabe between 0 ~ 2W.
Preferably, the angle that described generating laser (2) and the face normal direction of silica-based-vanadium dioxide film (1) are formed is 30 ~ 60 °.
Preferably, described collimating apparatus (3) is spherical lens or GRIN Lens.
Preferably, described power interface (6) is for there being the terminal of positive pole and negative terminal.
Preferably, the light-operated adjustable THz wave attenuating device of described one also comprises support housing (4) and Terahertz transmission window (5), described Terahertz transmission window (5) and silica-based-vanadium dioxide film (1) are in parallel placement, and the two ends of Terahertz transmission window (5) and silica-based-vanadium dioxide film (1) two ends are connected and fixed by two pieces of support housings (4) respectively.
Preferably, the sheet metal that described support housing (4) is black or laser attenuation sheet, generating laser (2) is supported by the support housing (4) of silica-based-vanadium dioxide film (1) upper end.
The utility model is by regulating the size of the Injection Current of power port (6), the luminous power that generating laser (2) is exported occurs to regulate continuously, because silica-based-vanadium dioxide film (1), under generating laser (2) effect, SEMICONDUCTOR-METAL phase transformation can occur, change the conductivity of silica-based-vanadium dioxide film (1), thus the absorptivity of THz wave is changed, reach the object realizing regulating transmission THz wave damping capacity.Support housing (4) is aluminium matter, the black metal sheet of copper, steel or laser attenuation sheet, remainingly penetrates light in order to absorb.Terahertz transmission window (5) is made up of strong high mold materials such as Teflon, High Resistivity Si, high density polyethylenes, has the effect of the physical strength of transmission THz wave and protective housing inner member.
The utility model has the advantage of: compare existing attenuator, light-operated adjustable THz wave attenuating device structure of the present utility model is simple, and volume is little, is easy to integrated, can apply to THz wave applied technical field.
Accompanying drawing explanation
The structural representation of a kind of adjustable THz wave attenuating device that Fig. 1 provides for the utility model example.
The relation that Fig. 2 is THz wave damping capacity and controls between luminous power.
Embodiment
Be described below in conjunction with the technical scheme in the utility model embodiment.Obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not paying creative work all belongs to the scope of the utility model protection.
Below in conjunction with accompanying drawing, the utility model is described in detail.
As shown in Figure 1, the utility model embodiment provides a kind of adjustable Terahertz attenuating device, comprises silica-based-vanadium dioxide film 1, generating laser 2, collimating apparatus 3 and power interface 6.
Described silica-based-vanadium dioxide film 1 is perpendicular to terahertz wave beam direction, generating laser 2 is arranged on silica-based-vanadium dioxide film side, generating laser 2 is connected with collimating apparatus 3, the laser that generating laser 2 sends penetrates from collimating apparatus 3, be radiated on the face of silica-based-vanadium oxide film 1, and the laser facula be radiated on the face of silica-based-vanadium oxide film 1 covers the THz wave spot of transmission completely, and power interface 6 is connected with generating laser 2.Described light-operated adjustable THz wave attenuating device also comprises support housing 4 and Terahertz transmission window 5.Terahertz transmission window 5 and silica-based-vanadium dioxide film 1 are in parallel placement, two ends and silica-based-vanadium dioxide film 1 two ends of Terahertz transmission window 5 are connected and fixed by two pieces of support housings 4 respectively, wherein, generating laser 2 is supported by the support housing 4 of silica-based-vanadium dioxide film 1 upper end.
The utility model is by being radiated on silica-based-vanadium dioxide film 1 by the laser that generating laser 2 exports, cause silica-based-vanadium dioxide film 1 that SEMICONDUCTOR-METAL phase transition process occurs, free electron is produced in silica-based-vanadium dioxide film 1, absorption is produced to the THz wave that Terahertz transmission window 5 is come in, causes the decay of THz wave.Remaining reflected light is reflexed to the inwall of support housing 4 by silica-based-vanadium dioxide film 1, and is absorbed by the inwall of blacking.By controlling the Injection Current of power port 6, controlling the luminous power that generating laser 2 exports, changing the free electronic concentration produced in vanadium dioxide film 1, reach the object of the damping capacity regulating transmission THz wave.
Fig. 2 is the Attenuation adjustable curve of above-described embodiment.
Claims (9)
1. a light-operated adjustable THz wave attenuating device, is characterized in that: comprise silica-based-vanadium oxide film (1), generating laser (2), sphere collimation lens (3) and power interface (6); Described silica-based-vanadium dioxide film (1) is perpendicular to terahertz wave beam direction, generating laser (2) is arranged on silica-based-vanadium dioxide film (1) side, generating laser (2) is connected with collimating apparatus (3), the laser that generating laser (2) sends penetrates from collimating apparatus (3), be radiated on the face of silica-based-vanadium oxide film (1), and the laser facula be radiated on the face of silica-based-vanadium oxide film (1) covers the THz wave spot of transmission completely, power interface (6) is connected with generating laser (2).
2. the light-operated adjustable THz wave attenuating device of one according to claim 1, is characterized in that: described silica-based-thickness of vanadium dioxide film (1) is 50 ~ 800nm.
3. the light-operated adjustable THz wave attenuating device of one according to claim 1, is characterized in that: described generating laser (2) is continuous wave laser or pulsed laser or laser diode.
4. the light-operated adjustable THz wave attenuating device of one according to claim 1, is characterized in that: the operation wavelength of described generating laser (2) is within the scope of 400nm ~ 1550nm, and Output optical power is continuously adjustabe between 0 ~ 2W.
5. the light-operated adjustable THz wave attenuating device of one according to claim 1, is characterized in that: the angle that described generating laser (2) and silica-based-vanadium dioxide film (1) face normal direction are formed is 30 ~ 60 °.
6. the light-operated adjustable THz wave attenuating device of one according to claim 1, is characterized in that: described collimating apparatus (3) is spherical lens or GRIN Lens.
7. the light-operated adjustable THz wave attenuating device of one according to claim 1, it is characterized in that: described power interface (6) is connected with generating laser (2), power interface (6) is for there being the terminal of positive pole and negative terminal.
8. the light-operated adjustable THz wave attenuating device of one according to claim 1, it is characterized in that: the light-operated adjustable THz wave attenuating device of described one also comprises support housing (4) and Terahertz transmission window (5), described Terahertz transmission window (5) and silica-based-vanadium dioxide film (1) are in parallel placement, the two ends of Terahertz transmission window (5) and silica-based-vanadium dioxide film (1) two ends are connected and fixed by two pieces of support housings (4) respectively, generating laser (2) is supported by the support housing (4) of silica-based-vanadium dioxide film (1) upper end.
9. the light-operated adjustable THz wave attenuating device of one according to claim 8, is characterized in that: the sheet metal that described support housing (4) is black or laser attenuation sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420805372.7U CN204256321U (en) | 2014-12-17 | 2014-12-17 | A kind of light-operated adjustable THz wave attenuating device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420805372.7U CN204256321U (en) | 2014-12-17 | 2014-12-17 | A kind of light-operated adjustable THz wave attenuating device |
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| CN204256321U true CN204256321U (en) | 2015-04-08 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104460050A (en) * | 2014-12-17 | 2015-03-25 | 中国电子科技集团公司第三十八研究所 | Optically-controlled adjustable THz-wave attenuator |
| WO2016095719A1 (en) * | 2014-12-17 | 2016-06-23 | 中国电子科技集团公司第三十八研究所 | Optically controlled adjustable terahertz wave attenuator and use method therefor |
| CN109597149A (en) * | 2017-09-30 | 2019-04-09 | 中国石油大学(北京) | It is a kind of novel for Terahertz attenuator in Terahertz function element |
| CN110187522A (en) * | 2019-05-24 | 2019-08-30 | 中国计量大学上虞高等研究院有限公司 | Silicon substrate Bi2O2Se structure Terahertz wave switch |
-
2014
- 2014-12-17 CN CN201420805372.7U patent/CN204256321U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104460050A (en) * | 2014-12-17 | 2015-03-25 | 中国电子科技集团公司第三十八研究所 | Optically-controlled adjustable THz-wave attenuator |
| WO2016095719A1 (en) * | 2014-12-17 | 2016-06-23 | 中国电子科技集团公司第三十八研究所 | Optically controlled adjustable terahertz wave attenuator and use method therefor |
| US10317708B2 (en) | 2014-12-17 | 2019-06-11 | 38 Research Institute, China Electronics Technology Group Corporation | Light-operated adjustable terahertz wave attenuator and use method thereof |
| CN109597149A (en) * | 2017-09-30 | 2019-04-09 | 中国石油大学(北京) | It is a kind of novel for Terahertz attenuator in Terahertz function element |
| CN109597149B (en) * | 2017-09-30 | 2020-03-27 | 中国石油大学(北京) | Novel terahertz attenuator used in terahertz functional device |
| CN110187522A (en) * | 2019-05-24 | 2019-08-30 | 中国计量大学上虞高等研究院有限公司 | Silicon substrate Bi2O2Se structure Terahertz wave switch |
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