CN109597149A - It is a kind of novel for Terahertz attenuator in Terahertz function element - Google Patents
It is a kind of novel for Terahertz attenuator in Terahertz function element Download PDFInfo
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- CN109597149A CN109597149A CN201710918504.5A CN201710918504A CN109597149A CN 109597149 A CN109597149 A CN 109597149A CN 201710918504 A CN201710918504 A CN 201710918504A CN 109597149 A CN109597149 A CN 109597149A
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
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- G02B5/0273—Diffusing elements; Afocal elements characterized by the use
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Abstract
The Ni nano wire Terahertz attenuator and Terahertz attenuator that the present invention is disclosed the novel three-decker attenuator of one kind, formed based on the structure.The three-decker attenuator, structure successively include: the Ni nano wire layer and dimethyl silicone polymer fixing layer of substrate, ordered arrangement from top to bottom.The Ni nano wire Terahertz attenuator, including two three-decker attenuator A/B of any of claims 1 or 2, wherein, three-decker attenuator location A is fixed, three-decker attenuator B is by continuous fixedly adjustable shaft rotation, in the axial line and the three-decker attenuator A that the three-decker attenuator B is rotated with the equidirectional center line of the axial line in same vertical guide.The continuously adjustable output of terahertz light intensity of wave is realized in innovation mainly to decaying in chip architecture of the invention by the double-deck rotatable structure.
Description
Technical field
The present invention relates to a kind of novel for Terahertz attenuator in Terahertz function element.
Background technique
THz wave is defined as electromagnetic wave of the frequency range from 0.1THz to 10THz under normal conditions, which is in micro-
Between wave and infrared light, wave-length coverage is from 30 microns to 3 millimeter.The electromagnetic spectrum position as locating for Terahertz is more special, makes
It is with many superior characteristics, and main feature includes: (1) transient state；(2) penetrability；(3) low energy；(4) it is concerned with
Property；(5) broadband property etc..Since THz wave has the above characteristic, and polar molecule such as hydrone, amino molecule are come
Saying all has very strong absorption to THz wave, so that terahertz light spectral technology suffers from very in terms of analyzing and studying macromolecular
Research Prospects well.
Currently, terahertz light spectral technology Major research field includes safety testing field, military and radar communication field, doctor
Medicine detection field, biochemical field and environmental monitoring field.Achieved in recent years in view of Terahertz Technology it is good into
Exhibition, but be only inadequate, Terahertz Technology for the research of terahertz detection as a complete Terahertz system
Progress also need to include building for related Terahertz function element, explore the progress with practical application to push.Terahertz function
Can device mainly include that terahertz waveguide, terahertz polarization device, terahertz wave modulator, THz wave antenna, THz wave are opened
Pass, terahertz wave attenuator etc..Due under study for action sometimes for being applied after THz wave is decayed, so Terahertz
Being developed into for wave attenuators assists THz wave to study essential a part.
So-called terahertz wave attenuator, refers to change THz wave power and energy response, main purpose be in order to
Protect THz detector saturation and to the purpose that THz radiation signal is decayed, the Terahertz mainly used in laboratory at present
The attenuator that attenuator is produced mostly from MicroTech company greatly, the attenuator is for THz photoconductive antenna, back oscillation device
And wide and flat signal decaying can be obtained in free electron laser, is mainly made of thin film coating element, it is main former
Reason is that have different Reduction Levels by the wedge-shaped silicon wafer of metalized, and wedge-shaped silicon wafer can be used separately or cooperatively, logical
The combination crossed between wedge-shaped silicon wafer can reach different Reduction Levels (transmission of Cui Haixia THz wave and sensing some problem
The Changchun research (D): Changchun University of Science and Technology, 2011).Although the technology develops more perfect, attenuator preparation side at present
Method is too single, and preparation method is complex, and costly, and this method can not achieve the company to THz wave to material
Continuous controllable regulation.
Summary of the invention
It is mentioned for technology too complex and expensive defect, the present invention existing for terahertz wave attenuator is prepared at present
A kind of novel three-decker attenuator, the Ni nano wire Terahertz attenuator formed based on the structure are gone out and based on described
The Terahertz attenuator of Ni nano wire Terahertz attenuator.
Three-decker attenuator provided by the present invention, structure successively include: the Ni of substrate, ordered arrangement from top to bottom
Nano wire layer and dimethyl silicone polymer (PDMS) fixing layer.
Wherein, the material that the substrate is selected is PE (polyethylene).
The ordered arrangement is concretely arranged in parallel, i.e., is between each Ni nano wire in the described Ni nano wire layer
It is arranged in parallel.
The area of the fixing layer is preferably identical as the area of the substrate.
Ni nano wire Terahertz attenuator provided by the present invention, including above-mentioned two identical three-decker attenuator A
And B, wherein three-decker attenuator location A is fixed, and three-decker attenuator B is described by continuous fixedly adjustable shaft rotation
Three-decker attenuator B rotation axial line and the three-decker attenuator A in the equidirectional center line of the axial line
In same vertical guide, the three-decker attenuator B is located at described relative to the rotary motion trace of the three-decker attenuator A
The side of three-decker attenuator A, to guarantee that two three-decker attenuator relative rotation form continuous angle, angular range
It is 0 ° -360 °.
When rotating angle is 0 degree, two three-decker attenuators are that parallel opposite (PDMS layer both i.e. is
Opposite).0 ° herein refer to two layers of Ni nano wire it is arranged in parallel and between the angle that is formed be 0 °
By rotating one of three-decker attenuator, make two layers of Ni nano wire at different angle, to realize to too
The continuous intensity controlled decaying of hertz light wave.
The Ni nano wire Terahertz attenuator further includes the connecting component for connecting three-decker attenuator A with B.
In above-mentioned Ni nano wire Terahertz attenuator, the connection type of three-decker attenuator A and B, which can be used, to be able to achieve
State any optional connection type of function.As three-decker attenuator A and B can be by being set to three-decker attenuator A and the side B
The connecting rod at face center is connected, and one end of the connecting rod is fixedly connected with three-decker attenuator A, the connecting rod it is another
End is rotatablely connected with three-decker attenuator B by continuous fixedly adjustable shaft.
Terahertz attenuator provided by the present invention, including above-mentioned Ni nano wire Terahertz attenuator and insertion apparatus.
Above-mentioned Ni nano wire Terahertz attenuator also belongs to guarantor of the invention in the application prepared in Terahertz function element
Protect range.The Terahertz function element mainly includes terahertz waveguide, terahertz polarization device, terahertz wave modulator, terahertz
Hereby wave antenna, THz wave switch, terahertz wave attenuator.
The present invention is upper different from conventional Terahertz attenuator material in material selection, and PE (polyethylene) is selected to be used as substrate material
Material, is deposited with Ni nano wire arranged in parallel in substrate, and it is solid that upper one layer of PDMS is then covered in PE substrate and Ni nano wire
Given layer.Ni nano wire attenuator of the invention selects industrial polyethylene as substrate, and PE plate is cut out conveniently, cheap, so
Ni nano wire is deposited in PE substrate using magnetic field afterwards.
It is excellent since Ni nano wire is easy to fall off and easy to oxidize in air in above-mentioned Ni nano wire Terahertz attenuator
Choosing, after prepared by the damping layer, strata dimethyl siloxane (PDMS) transparent medium work need to be covered on damping layer
For coating.
In above-mentioned Ni nano wire Terahertz attenuator, the double-deck Ni nano wire is received by rotating two single layer Ni
Continuously adjustable terahertz light wave attenuation may be implemented come what is realized in rice noodles piece by this method.
In above-mentioned Ni nano wire Terahertz attenuator, it is preferred that the coating substance is dimethyl silicone polymer
(PDMS), which is to make PDMS by heating substantially without absorbing and having good adhesive capacity to terahertz wave band
It is hardened and is adhered in PE substrate.
The present invention, which essentially consists in, selects Ni nano wire dual layer arrangement as damping layer, using the scattering principle of light to Terahertz
Wave is decayed, and this arrangement mode has effectively widened the preparation method of Terahertz attenuator with preparation method, is optimized too
The preparation process of hertz attenuator, and attenuating having the same.
(such as blade inserting attenuating device, rotating disc type decline Ni nano wire Terahertz attenuator provided by the invention with other structures
Subtract device be connected, can refer to prior art similar products structure) combine, can by the Terahertz attenuator application to it is actual too
In the research of hertz spectrum.
The present invention also provides the methods for preparing above-mentioned three-decker attenuator, include the following steps:
1) Ni nano wire is prepared using existing method；
2) it is deposited in substrate using magnetic field by the Ni is nano thread ordered；
3) it is covered on Ni nano wire with PDMS, must there is good contact with PE substrate.
Wherein, step 1) prepares the method for Ni nano wire concretely template, and gold electrode and molten is cleaned after preparation
AAO template is solved, can get more pure Ni nano wire.
The anti-oxidation processing of nano wire: being covered on Ni nano wire with PDMS, must there is good contact with PE substrate.
In above-mentioned preparation method, the arrangement of Ni nano wire is mainly appropriate by pouring into the Ni nano wire prepared
Dehydrated alcohol and ultrasound be formed uniformly turbid solution, by the effect of magnetic field and drying box by the Ni nanowire deposition in turbid solution
In polyethylene (PE) substrate, what is left on PE plate after dehydrated alcohol is dry is to arrange single layer Ni nano wire,
In above-mentioned preparation method, the preparation method of dimethyl silicone polymer (PDMS) layer is to be poured on appropriate liquid PDMS
It is arranged in the PE substrate of layer of Ni nano wire, heating makes PDMS be hardened and be adsorbed in substrate.
The present invention have it is following the utility model has the advantages that
Ni nano wire Terahertz attenuator provided by the invention uses and is parallel to substrate, mutually angled bilayer
The Ni nano wire of large-area ordered arrangement, and strata dimethyl siloxane (PDMS) coating is covered on Ni nano wire, have
The different degrees of decaying simply having a wide range of application, it can be achieved that THz wave intensity is prepared, it is low in cost, it is easy to industrialize
Production has a wide range of applications to the development of following tera-hertz spectra application.Of the invention is mainly to decaying chip architecture
On innovation, the continuously adjustable output of terahertz light intensity of wave is realized by the double-deck rotatable structure.The double-deck Ni nano wire
The bigger penetrating light intensity of angle it is weaker, deposition Ni nano wire concentration it is bigger, penetrating light intensity is weaker.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of three-decker attenuator, wherein 1PE substrate, 2Ni nano wire, 3PDMS coating.
Fig. 2 is the structural schematic diagram of Ni nano wire Terahertz attenuator, wherein 1PDMS coating, 2PE substrate, 3Ni receive
Rice noodles, 4 continuous fixedly adjustable shafts, A, B are the attenuator of three-decker.
Fig. 3 is that Terahertz attenuator faces sketch in embodiment 1.
Fig. 4 is two layers of Ni nano wire corresponding light intensity attenuation when in different angles in Ni nano wire Terahertz attenuator.
Specific embodiment
Method of the invention is illustrated below by specific embodiment, but the present invention is not limited thereto, it is all at this
Any modifications, equivalent replacements, and improvements etc. done within the spirit and principle of invention, should be included in protection model of the invention
Within enclosing.
Experimental method used in following embodiments is conventional method unless otherwise specified.
The materials, reagents and the like used in the following examples is commercially available unless otherwise specified.
Embodiment 1, a kind of Ni nano wire Terahertz attenuator are applied to Terahertz attenuator
As shown in Figure 1, three-decker attenuator provided by the invention, successively includes: PE basal layer, orderly row from top to bottom
Ni nano wire layer and dimethyl silicone polymer (PDMS) fixing layer (protective layer) of column.
As shown in Fig. 2, Ni nano wire Terahertz attenuator provided by the present invention, declines including two above-mentioned three-deckers
Subtracting piece, the two is rotatablely connected by being set to the continuous fixedly adjustable shaft of three-decker attenuator side, and one of them three layers
Structural damping piece position is fixed, another three-decker attenuator can be rotated, and makes two three-decker attenuator relative rotation shapes
At continuous angle, angular range is 0 ° -360 °.When rotating angle is 0 degree, two three-decker attenuators are parallel phases
Pair.
The three-decker attenuator of the implementation case is prepared by following method:
The growth of Ni nano wire: using porous anodic aluminium oxide (AAO) template as empty template, template bottom surface with a thickness about
The gold electrode of 20nm uses carbon electrode as cathode, anode.Reaction solution is by weighing 33.84g six hydration nickel sulfate and 18g
Boric acid is put into jointly in 400ml beaker, carries out magnetic agitation after 400ml deionized water is added, and is kept stirring filling and is passed through dilute sulphur
It is 3 that acid solution, which adjusts reacting liquid pH value, obtains jade-green supernatant liquid.Reaction solution is added to electrochemical reaction deposition system
System, initial current density are 6mA/cm2, it is electroplated after 2min and current density is reduced to 3mA/cm2, continue that about 2.5h is electroplated
The Ni nano-wire array of marshalling is made in AAO template.Finally to remove removing template, it is divided into cleaning gold electrode and dissolution AAO
Template, the gold electrode after the aqua regia dissolution's AAO template being configured to the concentrated nitric acid and concentrated hydrochloric acid that mixed proportion is 1:3 (v/v), goes
AAO template 1h is dissolved under ultrasound condition with 0.25g/ml sodium hydroxide solution after ionized water cleaning template, utilizes neodymium-iron-boron
Ni nano wire is drawn to beaker bottom by iron, and purer Ni nano wire can be prepared after cleaning.Prepared Ni nano wire
A length of 20-50 μm, diameter is 300nm or so.
The arrangement of Ni nano wire: pouring into appropriate dehydrated alcohol using Ni nano wire and is ultrasonically formed turbid solution, then will be muddy
Turbid is poured into bottom and is contained in the beaker of polyethylene (PE) substrate, is added after the box that both ends are fixed with magnet is put into drying box
Beaker containing turbid solution is deposited in Ni nano wire under magnetic fields in PE substrate.
The anti-oxidation processing of Ni nano wire: since the Ni nano wire settled by the above method can not be completely fixed in
In PE substrate, while being exposed in air environment can be such that Ni nano wire aoxidizes for a long time, therefore appropriate liquid PDMS is poured on row
In the PE substrate for showing two layers of Ni nano wire, heating makes PDMS be hardened and is adsorbed on the decaying for arriving three-decker in substrate
Piece.
By two three-decker attenuators of above-mentioned preparation, the continuous fixedly adjustable shaft by being set to its side turns
Dynamic connection is to get Ni nano wire Terahertz attenuator.
Fig. 3 is that Terahertz attenuator faces sketch in embodiment 1, more can intuitively observe the structure.
Ni nano wire ordered arrangement at a certain angle as can be seen from Figure 1, and be attached on PE basal layer in parallel；
Dimethyl silicone polymer (PDMS) protective layer is located on PE basal layer and Ni nano wire, wherein PE basal layer and poly- two
Methylsiloxane level product is roughly equal, and it is because dimethyl silicone polymer layer is transparent guarantor that two layers of area, which slightly has gap, in Fig. 1
Sheath is slightly different it with PE layers, is only used as schematic configuration diagram in order to observe the protective layer in structure chart.
In Ni nano wire Terahertz attenuator, single Ni nano wire is observed under scanning electron microscope in the double-deck Ni nano wire layer
It is micron level to length, diameter is Nano grade, and single layer Ni nanowire thickness is about micron level, two layers of Ni nanowire thickness
Approximately equal, by terahertz light spectrometer testing result, we can be regarded as the overlapping of the identical Ni nano wire of two layers of thickness.
Two layers of Ni nano wire angulation is continuously adjusted within the scope of 0 ° -360 °, with becoming larger for two layers Ni nanowire alignment angle, too
Hertz transmitted intensity weakens, caused by the scattering reason this is mainly due to light.
Fig. 4 gives in Ni nano wire Terahertz attenuator, two layers of Ni nano wire when in different angles corresponding light intensity decline
Reduction fruit.It can be seen from the figure that light intensity attenuation degree is bigger with the increase of angle, i.e., attenuating is better.
Claims (9)
1. a kind of three-decker attenuator, structure successively include: from top to bottom substrate, ordered arrangement Ni nano wire layer and
Dimethyl silicone polymer fixing layer.
2. according to the method described in claim 1, it is characterized by: the material that the substrate is selected is polyethylene；
The ordered arrangement is arranged in parallel, i.e., is in arranged in parallel between each Ni nano wire in the described Ni nano wire layer；
The area of the fixing layer is identical as the area of the substrate.
3. a kind of Ni nano wire Terahertz attenuator, including two identical three-decker decaying of any of claims 1 or 2
Piece, wherein one is defined as three-decker attenuator A, another is defined as three-decker attenuator B, and the three-decker declines
Subtract piece location A to fix, the three-decker attenuator B passes through continuous fixedly adjustable shaft rotation, the three-decker attenuator B
In the axial line of rotation and the three-decker attenuator A with the equidirectional center line of the axial line in same vertical guide.
4. Ni nano wire Terahertz attenuator according to claim 3, it is characterised in that: the rotation angle be 0 degree, two
A three-decker attenuator is parallel opposite.
5. Ni nano wire Terahertz attenuator according to claim 3 or 4, it is characterised in that: described two three-deckers
Attenuator relative rotation forms continuous angle, and angular range is 0 ° -360 °.
6. according to the described in any item Ni nano wire Terahertz attenuators of claim 3-5, it is characterised in that: the Ni nano wire
Terahertz attenuator further includes the connecting component for connecting three-decker attenuator A with B.
7. the described in any item Ni nano wire Terahertz attenuators of claim 3-6 are preparing answering in Terahertz function element
With.
8. application according to claim 7, the Terahertz function element mainly includes terahertz waveguide, terahertz polarization
Device, terahertz wave modulator, THz wave antenna, THz wave switch, terahertz wave attenuator.
9. a kind of Terahertz attenuator, including the described in any item Ni nano wire Terahertz attenuators of claim 3-6 and insertion
Device.
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