CN208705507U - A kind of Ni nano-wire array Terahertz attenuator - Google Patents
A kind of Ni nano-wire array Terahertz attenuator Download PDFInfo
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- CN208705507U CN208705507U CN201821166538.XU CN201821166538U CN208705507U CN 208705507 U CN208705507 U CN 208705507U CN 201821166538 U CN201821166538 U CN 201821166538U CN 208705507 U CN208705507 U CN 208705507U
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Abstract
The utility model relates to a kind of Ni nano-wire array Terahertz attenuators, it is characterised in that: it includes substrate, ordered arrangement Ni nano wire layer on the substrate and coated in the protective layer on the Ni nano wire layer.The Ni nano-wire array layer includes mutually orthogonal several Ni nano-wire array layers.Each Ni nano-wire array layer includes the Ni nano-wire array unit of multiple groups parallel interval arrangement, and each group Ni nano-wire array unit in the upper layer Ni nano-wire array layer is mutually orthogonal with each group Ni nano-wire array unit in the lower layer Ni nano-wire array layer.The utility model can be widely applied to Terahertz attenuator and its related fields.
Description
Technical field
The utility model relates to a kind of Terahertz attenuators, decay more particularly to a kind of Ni nano-wire array Terahertz
Device.
Background technique
Terahertz (terahertz, abbreviation THz, 1THz=1012Hz) wave refers to that frequency in 0.1-10THz range, corresponds to
Electromagnetic wave of the wavelength in 3000-30 μ m.Due to the unique position that it has in electromagnetic spectrum, also have many
More special property:
(1) since absorption of the nonmetallic, non-polar material to THz wave is smaller, thus THz wave is in such as timber, paper, modeling
Expect that there is high permeability in stool material, is had a good application prospect in military surveillance, field of detecting；
(2) since the frequency ratio GHz of THz wave is higher, single THz pulse frequency range can load 10-10000 ghz band,
So THz wave has broadband character, simultaneously because wavelength is shorter, directionality is more preferable, thus THz wave is highly suitable for short distance
From high-speed radio broadband connections；
(3) THz wave have unionized characteristic, frequency be 1THz photon energy be about 4meV, this energy it is too small so that
Cannot generate for most molecule, the harmful ionization of lattice structure, thus biology and in terms of have
There is biggish advantage；
(4) due to the vibration of molecule in most of condensed state matter and biological tissue, rotational energy level and intermolecular weak
The corresponding characteristic absorpting spectruming line of interaction energy level is in THz wavelength band, thus different in THz wave band using substance
Absorption line feature can the type for identifying substance and molecule rapidly and efficiently, different absorption lines is also referred to as the substance
THz fingerprint.
Although THz wave have the advantages that it is above, since vapor, oxygen etc. absorb THz wave strongly in atmosphere
Influence and THz wave device development in practical applications after so that the research and development of Terahertz frequency range entirety are all
It is very limited, since last century the nineties, as the development of semiconductor, photoelectronics, micro-nano technology technology just enables Terahertz
Science and Technology achieves huge progress.
The progress of Terahertz Technology also needs to include building for related Terahertz function element, explore with practical application into
Exhibition is to push.Terahertz function element mainly includes terahertz waveguide, terahertz polarization device, terahertz wave modulator, Terahertz
Wave antenna, THz wave switch, terahertz wave attenuator etc..Among this, and the most with the development of terahertz wave attenuator
It is important.
Current stage, apply attenuator in terahertz time-domain spectroscopic technology mainly by the combined crosswise of prism come
The regulation for realizing the decaying to Terahertz light wave adjusts the light of incident beam by carrying out single reflection or total internal reflection to prism
Spot size or incidence angle, total reflection number etc., to achieve the purpose that decaying, this method light channel structure, which is taken, makes complexity, and precision is wanted
Ask high, instrument service life is short.And the attenuator that the Terahertz attenuator put into is produced mostly from MicroTech company greatly,
For the attenuator for THz photoconductive antenna, wide and flat signal is can be obtained in back oscillation device and free electron laser
Decaying, is mainly made of thin film coating element, and cardinal principle is that have different decline by the wedge-shaped silicon wafer of metalized
Diminishing is flat, and wedge-shaped silicon wafer can be used separately or cooperatively, can reach different decaying water by the combination between wedge-shaped silicon wafer
It is flat, but method production product material is costly, and preparation process is more complex, can be only applied among laboratory research at present.
Summary of the invention
In view of the above problems, the object of the present invention is to provide a kind of Ni nano-wire array Terahertz attenuators, this declines
It is simple, easy to operate and low in cost to subtract device structure.
To achieve the above object, the utility model takes following technical scheme: a kind of Ni nano-wire array Terahertz decaying
Device, it is characterised in that: it includes substrate, ordered arrangement Ni nano wire layer on the substrate and is coated in described Ni nanometers
Protective layer on line layer.
The Ni nano-wire array layer includes mutually orthogonal several layers Ni nano-wire array layer.
Each Ni nano-wire array layer includes the Ni nano-wire array unit of multiple groups parallel interval arrangement, and upper layer institute
State each group Ni nano-wire array unit in Ni nano-wire array layer with each group Ni in Ni nano-wire array layer described in lower layer
Nano-wire array unit is mutually orthogonal.
In each layer Ni nano-wire array layer, the interval of the Ni nano-wire array unit is all the same two-by-two.
In each Ni nano-wire array layer, 5,10,15 or 20 μm are divided between the Ni nano-wire array unit two-by-two.
The substrate is made of polythene material.
The protective layer is made of polydimethyl siloxane material.
Because the utility model adopts the above technical scheme, it has the following advantages: 1, the utility model is due to using poly-
Vinyl material makes substrate, which easily cuts, and low in cost, effectively reduces the cost of manufacture of Terahertz attenuator, letter
Operating procedure is changed.2, Ni nano wire Terahertz attenuator provided by the utility model, which contains, is parallel to substrate, Orthogonal Double-layer
It is large-area ordered arrangement and same layer in different interval Ni nano-wire array, by control Ni nano-wire array spacing come
Realize the regulation of terahertz light intensity of wave, structure is simple.3, the utility model on Ni nano-wire array layer top due to being covered with
One layer of PDMS coating can effectively prevent falling off and aoxidizing for Ni nano wire in Ni nano-wire array layer, improve as protective layer
Service life of equipment.The utility model has preparation simply, low in cost, easy to industrialized production, to the following tera-hertz spectra
The development of application has good application prospect.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model Terahertz attenuator；
Fig. 2 is the side structure schematic diagram of the utility model Ni nano wire Terahertz attenuator.
Specific embodiment
The utility model is described in detail below by specific embodiments and the drawings.
As shown in Figure 1 and Figure 2, a kind of Ni nano-wire array Terahertz attenuator provided by the utility model comprising under
Substrate 1, Ni nano wire layer 2 and the protective layer 3 set gradually upwards.Wherein, Ni nano-wire array layer 2 includes mutually orthogonal
Several layers Ni nano-wire array layer, each Ni nano-wire array layer include the Ni nano-wire array list of multiple groups parallel interval arrangement
Member, and each group Ni nano-wire array unit in the Ni nano-wire array layer of upper layer with each group in lower layer Ni nano-wire array layer
Ni nano-wire array unit is mutually orthogonal.The utility model is only introduced with two layers of Ni nano-wire array layer, root in actual use
It can be Ni nanometers in quantity to Ni nano-wire array layer and each layer Ni nano-wire array layer according to the attenuation degree of THz wave
The quantity of linear array column unit is adjusted.
As a preferred embodiment, two-by-two in Ni nano-wire array layer, the interval of Ni nano-wire array unit can be with
It is identical can not also be identical, in each Ni nano-wire array layer, the interval of Ni nano-wire array unit is all the same two-by-two, preferably 5,
10,15 or 20 μm, naturally it is also possible to select other data, the interval by adjusting Ni nano-wire array unit can be to Terahertz
Attenuation degree is adjusted.
As a preferred embodiment, substrate is made of polythene material.
As a preferred embodiment, protective layer is made of dimethyl silicone polymer (PDMS) material.
Since THz wave is mainly by both sides influence of fading: 1) being that Ni nano wire itself has absorption to THz wave
Characteristic；2) decaying of the unit of two layers of Ni nano-wire array composition for THz wave.With each Ni in Ni nano-wire array
The variation at nanowire unit interval, THz wave can Ni nano wire formed small unit in occur scattering (spacing distance ×
The junior unit that spacing distance is formed) also can be different, to achieve the purpose that decaying.
The utility model additionally provides the method for preparing above-mentioned bilayer Ni nano wire attenuator, includes the following steps:
1) Ni nano wire is prepared using chemical reduction method, specifically includes the following steps:
1.1) Nickel dichloride hexahydrate for weighing 1.2g is added in the ethylene glycol of 50ml, using magnetic agitation plus ultrasonic disperse
Method is dispersed in nickel ion in ethylene glycol, forms transparent blue solution；
1.2) claim the sodium hydroxide of 12.0g to be dissolved in 200ml ethylene glycol and obtain colourless solution；Then two kinds above are mixed
Solution and the reducing agent hydrazine hydrate that 150ml is added, the beaker for being loaded with mixed solution is put into the water-bath with parallel magnetic field
70 DEG C are heated to, 30min is kept the temperature；
1.3) black gray expandable product finally is drawn using magnetic field, and is respectively washed 3 times with deionized water, ethyl alcohol, acetone, obtained
One-dimensional Ni nano wire；
2) it is arranged in substrate using magnetic field alignment technology by the Ni is nano thread ordered；
The arrangement of Ni nano wire after pouring into dehydrated alcohol and ultrasound in the Ni nano wire prepared mainly by forming
Turbid solution, by the effect of magnetic field and drying box by the Ni nanowire deposition in turbid solution in PE substrate, dehydrated alcohol is dry
What is left on PE plate afterwards is to arrange single layer Ni nano-wire array；
3) utilize microelectronic processing technology by same layer nano-wire array space segmentation；
Different interval in same layer Ni nano-wire array is on the basis of the single layer of nanowires array arranged using micro-
The whirl coating of electronics processing technology such as exposes and removes photoresist at the processes preparation；
4) it is covered on Ni nano-wire array with PDMS, must there is good contact with PE substrate.
The preparation method of PDMS layer is that appropriate liquid PDMS is poured in the PE substrate for being arranged with layer of Ni nano wire, is heated
PDMS is set to be hardened and be adsorbed in substrate.
The various embodiments described above are merely to illustrate the utility model, wherein the structure of each component, connection type etc. are all can be with
It is varied, all equivalents and improvement carried out on the basis of technical solutions of the utility model should not exclude
Except the protection scope of the utility model.
Claims (7)
1. a kind of Ni nano-wire array Terahertz attenuator, it is characterised in that: it include substrate, ordered arrangement on the substrate
Ni nano wire layer and coated in the protective layer on the Ni nano wire layer.
2. a kind of Ni nano-wire array Terahertz attenuator as described in claim 1, it is characterised in that: the Ni nanometers of linear array
Column layer includes mutually orthogonal several layers Ni nano-wire array layer.
3. a kind of Ni nano-wire array Terahertz attenuator as claimed in claim 2, it is characterised in that: each Ni nano wire
Array layer includes the Ni nano-wire array unit of multiple groups parallel interval arrangement, and each in Ni nano-wire array layer described in upper layer
Group Ni nano-wire array unit is mutually orthogonal with each group Ni nano-wire array unit in Ni nano-wire array layer described in lower layer.
4. a kind of Ni nano-wire array Terahertz attenuator as claimed in claim 3, it is characterised in that: each layer is Ni nanometers described
In array layers, the interval of the Ni nano-wire array unit is all the same two-by-two.
5. a kind of Ni nano-wire array Terahertz attenuator as claimed in claim 4, it is characterised in that: each Ni nano wire
In array layer, 5,10,15 or 20 μm are divided between the Ni nano-wire array unit two-by-two.
6. a kind of Ni nano-wire array Terahertz attenuator as described in claim 1, it is characterised in that: the substrate is using poly-
Vinyl material production.
7. a kind of Ni nano-wire array Terahertz attenuator as described in claim 1, it is characterised in that: the protective layer uses
Polydimethyl siloxane material production.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821166538.XU CN208705507U (en) | 2018-07-23 | 2018-07-23 | A kind of Ni nano-wire array Terahertz attenuator |
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| CN201821166538.XU CN208705507U (en) | 2018-07-23 | 2018-07-23 | A kind of Ni nano-wire array Terahertz attenuator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110989207A (en) * | 2019-11-20 | 2020-04-10 | 郑州大学 | Bidirectional mechanically tuned terahertz wave modulator and preparation method and application thereof |
-
2018
- 2018-07-23 CN CN201821166538.XU patent/CN208705507U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110989207A (en) * | 2019-11-20 | 2020-04-10 | 郑州大学 | Bidirectional mechanically tuned terahertz wave modulator and preparation method and application thereof |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190405 Termination date: 20200723 |