CN109411427B - Micro-channel radiator and manufacturing method thereof - Google Patents
Micro-channel radiator and manufacturing method thereof Download PDFInfo
- Publication number
- CN109411427B CN109411427B CN201811035191.XA CN201811035191A CN109411427B CN 109411427 B CN109411427 B CN 109411427B CN 201811035191 A CN201811035191 A CN 201811035191A CN 109411427 B CN109411427 B CN 109411427B
- Authority
- CN
- China
- Prior art keywords
- micro
- channel
- radiator
- channel radiator
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
Abstract
The invention discloses a micro-channel radiator, which is internally provided with a micro-channel and a shunt network, wherein the surface of the micro-channel radiator is provided with a liquid inlet and a liquid outlet, and the outer surface of the micro-channel radiator is provided with a metal layer. According to the micro-channel radiator, the metal layer is arranged on the surface of the micro-channel radiator, so that the grounding requirement of a high-frequency system is well met, deep TSV holes are prevented from being formed in the micro-channel radiator, the processing difficulty and the manufacturing cost of the micro-channel radiator are reduced, and the integration density and the structural reliability of a circuit are guaranteed; due to the existence of the metal layer, the upper surface and the lower surface of the micro-channel radiator are smooth and have no cavity, a plurality of chips with high heat flow density can be integrated on the surface of the micro-channel radiator, and a circuit can be flexibly designed on the premise of ensuring the heat dissipation performance of a product.
Description
Technical Field
The invention relates to the technical field of microelectronic heat dissipation, in particular to a micro-channel heat sink and a manufacturing method thereof.
Background
The power chip is a core component of the radio frequency micro system, and the development of advanced semiconductor materials enables the performance of the power chip to be continuously improved. At present, the third generation semiconductor technology has the characteristic of wide forbidden band, can bear higher working junction temperature, has the power density of 30W/mm (far higher than 0.5W/mm of GaAs), and can increase the output power of an electronic system by 5 times and reduce the volume by half. However, in the microwave frequency band, the self-heating effect of the third generation semiconductor device is quite serious, and the output heat flux density of some multi-grid devices in the microwave frequency band even reaches the kilowatt per square centimeter magnitude. Therefore, the heat dissipation problem has become a bottleneck problem that severely restricts the performance of the microsystem.
The silicon-based micro-channel directly cools the chip through the micro-scale continuous fluid, the influence of thermal resistance among all heat sinks in a remote heat dissipation mode on heat dissipation efficiency is reduced to the maximum extent, the cooling efficiency of the chip is greatly improved, the silicon-based micro-channel becomes one of the best ways for integrating with the chip and realizing heat dissipation of a device at the nearest end, and the silicon-based micro-channel attracts wide attention, wherein related patents comprise Chinese patent CN1558448A, Chinese patent CN103839905A and the like.
However, the existing silicon-based micro-channel radiator exists in a monolithic form, when secondary integration is performed in a system, the grounding distance of a high-frequency power chip is long, the parasitic effect is serious, and the existing silicon-based micro-channel radiator cannot meet the grounding requirement of the high-frequency system. In patent CN103199086B, a Through Silicon Via (TSV) is integrated on the microchannel heat sink, and can also be used for grounding. However, the requirement of high heat dissipation makes the depth-to-width ratio of the micro-channel heat dissipation structure large, the whole thickness is large (more than or equal to 400 μm), and the structure is complex. This presents three problems: 1) the deep TSV hole is difficult to machine, and the process cost is high; 2) the deep TSV holes (the depth is more than or equal to 500 mu m) are generally hollow holes, other devices are not suitable to be integrated on the deep TSV holes, and the integration density of a circuit is reduced; 3) in order to maintain the reliability of the whole structure, the TSV integration quantity is limited, and the requirement of good grounding of a high-frequency power chip cannot be met.
Disclosure of Invention
In order to solve the defects that the existing micro-channel radiator cannot meet the grounding requirement of a high-frequency system or has large processing difficulty of deep TSV holes, high process cost, reduced circuit density and limited quantity, the invention provides a micro-channel radiator and a manufacturing method thereof.
The technical scheme of the invention is as follows:
a micro-channel radiator is provided with a micro-channel and a shunt network, a liquid inlet and a liquid outlet are arranged on the surface, and a metal layer is arranged on the outer surface of the micro-channel radiator.
In the technical scheme, the metal layer is arranged on the surface of the micro-channel radiator, so that the grounding requirement of a high-frequency system is well met, deep TSV holes are prevented from being formed in the micro-channel radiator, the processing difficulty and the manufacturing cost of the micro-channel radiator are reduced, and the integration density and the structural reliability of a circuit are guaranteed.
The micro-channel and the shunt network can be in any shape, and the actual shape is determined according to the heat dissipation requirement. Illustratively, the micro flow channels and the shunt network may be shaped as follows: serpentine, spiral, i-shaped, tree-shaped, straight slot, dog-leg, etc.
Preferably, the thickness of the micro flow channel heat sink is at least 400 μm.
Preferably, the metal layer is continuously distributed on the surface of the micro flow channel heat sink.
Preferably, the metal layer material is Au or Ni/Au.
When the metal layer is made of Au, the metal layer is of a single-layer structure, namely the metal layer is an Au layer; when the metal layer is made of Ni/Au, the metal layer is of a double-layer structure, the lower layer is a Ni layer, the upper layer is an Au layer, the thickness of the Ni layer is 2-4 mm, and the thickness of the Au layer is 0.05-0.3 mm.
Preferably, the width of the micro flow channel is 10-100 μm, and the depth is 150-500 μm.
More preferably, the microchannel has a width of 30 μm and a depth of 250 μm.
The micro-channel has radiating fins with high depth-to-width ratio and a shunt network, and can meet the requirement that the heat flow density is more than 500W/cm2The heat dissipation requirements.
Preferably, seed layers are respectively arranged on the upper surface and the lower surface of the micro-channel radiator, and the seed layers are made of Ti/W/Au.
The seed layer is of a three-layer structure, the lower layer is a Ti layer with the thickness of 5-10 nm, the middle layer is a W layer with the thickness of 5-10 nm, and the upper layer is an Au layer with the thickness of 20-30 nm. The seed layer is arranged, so that the adhesive force between the metal layer and the silicon substrate can be improved, and the metal layer can be better attached to the surface of the micro-channel radiator.
Preferably, the liquid inlet and the liquid outlet of the micro-channel radiator are circular.
The invention also provides a manufacturing method of the micro-channel radiator, which comprises the following steps: through grooves are arranged around each micro-channel radiator, and the single micro-channel radiator is obtained by cutting the through grooves by using a laser fragmentation process.
In the above technical scheme, the through grooves are formed in the side faces of the micro-channel radiator, at least four through grooves are formed around each micro-channel radiator, and at least one through groove is formed in each side face. Through the introduction of the through grooves, the side surfaces of each micro-channel radiator can be ensured to be provided with the metal layers before laser slicing cutting, and the metal layers can be electroplated in place in one step.
Preferably, the width of the cross section of the through groove is 40-200 μm, and the length of the cross section of the through groove is at least 1/2 of the side length of the cross section of the micro-channel radiator.
More preferably, the width of the cross section of the through groove is 70-150 μm, and the length of the cross section of the through groove is 2/3 which is the side length of the cross section of the micro-channel radiator.
The width of the through groove is required to be enough not to damage the metalized side face of the micro-channel radiator in the laser cutting process, the width of the cross section of the through groove is generally 40-200 mu m larger than that of the cutting channel, and preferably, the width of the cross section of the through groove is 100 mu m larger than that of the cutting channel.
Preferably, the method for manufacturing the micro flow channel heat sink includes the following steps:
1) taking a silicon chip A and a silicon chip B, and arranging a micro-channel and a shunt network on the surface of any one silicon chip;
2) permanently bonding the silicon chip A and the silicon chip B to obtain a silicon chip C with a built-in micro channel;
3) arranging through grooves around each micro-channel radiator on the silicon wafer C;
4) seed layers are arranged on the upper surface and the lower surface of the silicon wafer C;
5) arranging a metal layer on the surface of the silicon wafer C;
6) arranging a liquid inlet and a liquid outlet on the lower surface of each micro-channel radiator on the silicon chip C;
7) and cutting the through groove by using a laser slicing process to obtain the single micro-channel radiator.
Step 1) etching a micro-channel and a shunt network on the surface of a silicon wafer by using a dry etching process; step 2) also comprises the step of controlling the thickness of the silicon chip C in a proper range by using a thinning and polishing process, wherein the thickness of the silicon chip C is the thickness of the micro-channel radiator; step 3) etching through grooves around each micro-channel radiator on the silicon wafer C by using an etching process; step 4) depositing seed layers on the upper surface and the lower surface of the silicon wafer C by using a sputtering process; step 5) electroplating a metal layer on the surface of the silicon wafer C by using an electroplating process; and 6) etching the liquid inlet and the liquid outlet on the lower surface of each micro-channel radiator on the silicon wafer C by using an etching process.
Preferably, the method for permanently bonding the silicon wafer A and the silicon wafer C in the step 2) comprises the following steps: respectively arranging a layer of silicon dioxide on the bonding surface of the silicon wafer A and the silicon wafer B, controlling the surface roughness of the silicon dioxide layer to be below 1nm, and then bonding the silicon wafer A and the silicon wafer B by using a wafer bonding process.
Controlling the surface roughness of the silicon dioxide layer below 1nm by using a chemical mechanical polishing technology; the wafer bonding process refers to a silicon dioxide fusion bonding process.
The invention has the following beneficial effects:
according to the micro-channel radiator, the metal layer is arranged on the surface of the micro-channel radiator, so that the grounding requirement of a high-frequency system is well met, deep TSV holes are prevented from being formed in the micro-channel radiator, the processing difficulty and the manufacturing cost of the micro-channel radiator are reduced, and the integration density and the structural reliability of a circuit are guaranteed; due to the existence of the metal layer, the upper surface and the lower surface of the micro-channel radiator are smooth and have no cavity, a plurality of chips with high heat flow density can be integrated on the surface of the micro-channel radiator, and a circuit can be flexibly designed on the premise of ensuring the heat dissipation performance of a product.
Drawings
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
FIG. 1 is a schematic view of the micro flow channel heat sink according to an embodiment of the invention.
FIG. 2 is a cross-sectional view of a micro flow channel heat sink in an embodiment of the invention.
Fig. 3 is a schematic diagram of a silicon wafer A, B with a silicon dioxide layer on its surface according to an embodiment of the present invention.
FIG. 4 is a schematic diagram of etching micro flow channels on the surface of a silicon wafer A according to an embodiment of the present invention.
FIG. 5 is a schematic representation of a silicon wafer C obtained by bonding a silicon wafer A, B in an example of the present invention.
FIG. 6 is a schematic diagram of thinning and polishing a silicon wafer C according to an embodiment of the present invention.
Fig. 7 is a schematic view of a through groove etched in the side surface of the silicon wafer C in the embodiment of the invention.
FIG. 8 is a schematic diagram of a metal layer disposed on the surface of a silicon wafer C according to an embodiment of the present invention.
FIG. 9 is a schematic view of a liquid inlet and a liquid outlet for etching the surface of a silicon wafer C according to an embodiment of the present invention.
FIG. 10 is a schematic diagram of a micro flow channel heat sink obtained by laser dicing according to an embodiment of the present invention.
Description of reference numerals:
1. a metal layer; 2. a micro flow channel; 3. a liquid inlet and a liquid outlet; 4. a silicon wafer A; 5. a silicon wafer B; 6. a through groove; 7. a silicon dioxide layer; 8. and cutting a channel.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
The defects of the prior art are as follows: the conventional micro-channel radiator cannot meet the grounding requirement of a high-frequency system or has the defects of high difficulty in processing deep TSV holes, high process cost, reduction in circuit density and limited quantity.
The technical problems to be solved by the invention are as follows: provides a micro-channel radiator with a through groove on the side surface and a metal layer on the surface.
The basic implementation mode is as follows:
as shown in fig. 1-10, a microchannel heat sink has a microchannel (2) and a shunt network therein, a liquid inlet and a liquid outlet (3) on the surface, and a metal layer (1) on the outer surface of the microchannel heat sink.
In the technical scheme, the metal layer (1) is arranged on the surface of the micro-channel radiator, so that the grounding requirement of a high-frequency system is well met, deep TSV holes are prevented from being formed in the micro-channel radiator, the processing difficulty and the manufacturing cost of the micro-channel radiator are reduced, and the integration density and the structural reliability of a circuit are guaranteed.
The micro-channel and the shunt network can be in any shape, and the actual shape is determined according to the heat dissipation requirement. Illustratively, the micro flow channels and the shunt network may be shaped as follows: serpentine, spiral, i-shaped, tree-shaped, straight slot, dog-leg, etc.
Preferably, the thickness of the micro flow channel heat sink is at least 400 μm. Illustratively, the thickness of the micro flow channel heat sink may be 400 μm, 450 μm, 500 μm, 600 μm, or the like.
Preferably, the metal layer (1) is continuously distributed on the surface of the micro-channel heat sink.
Preferably, the metal layer (1) is made of Au or Ni/Au.
When the metal layer (1) is made of Au, the metal layer (1) is of a single-layer structure, namely the metal layer (1) is an Au layer; when the metal layer (1) is made of Ni/Au, the metal layer (1) is of a double-layer structure, the lower layer is a Ni layer, the upper layer is an Au layer, the thickness of the Ni layer is 2-4 mm, and the thickness of the Au layer is 0.05-0.3 mm.
Preferably, the width of the micro flow channel (2) is 10-100 μm, and the depth is 150-500 μm. Illustratively, the width of the micro flow channel (2) may be 10 μm, 30 μm, 50 μm, 80 μm, 100 μm; the depth of the micro flow channel (2) can be 150 μm, 200 μm, 250 μm, 350 μm, 500 μm.
More preferably, the micro flow channel (2) has a width of 30 μm and a depth of 250 μm.
The micro-channel (2) is provided with radiating fins with high depth-to-width ratio and a shunt network, and can meet the requirement that the heat flow density is more than 500W/cm2The heat dissipation requirements.
Preferably, seed layers are respectively arranged on the upper surface and the lower surface of the micro-channel radiator, and the seed layers are made of Ti/W/Au.
The seed layer is of a three-layer structure, the lower layer is a Ti layer with the thickness of 5-10 nm, the middle layer is a W layer with the thickness of 5-10 nm, and the upper layer is an Au layer with the thickness of 20-30 nm. The seed layer is arranged, so that the adhesive force between the metal layer and the silicon substrate can be improved, and the metal layer can be better attached to the surface of the micro-channel radiator.
Preferably, the liquid inlet and the liquid outlet (3) of the micro-channel radiator are circular.
The invention also provides a manufacturing method of the micro-channel radiator, which comprises the following steps: through grooves (6) are arranged around each micro-channel radiator, and the single micro-channel radiator is obtained by cutting the through grooves (6) by using a laser slicing process.
In the technical scheme, the through grooves (6) are formed in the side faces of the micro-channel radiator, at least four through grooves (6) are formed in the periphery of each micro-channel radiator, and at least one through groove (6) is formed in each side face. Through the introduction of the through groove (6), the side surface of each micro-channel radiator can be ensured to be provided with the metal layer (1) before laser slicing cutting, and the electroplating of the metal layer (1) can be in place in one step.
Preferably, the width of the cross section of the through groove (6) is 40-200 μm, and the length of the cross section of the through groove (6) is at least 1/2 of the side length of the cross section of the micro-channel radiator. Illustratively, the depth of the through grooves (6) may be 40 μm, 70 μm, 100 μm, 150 μm, 200 μm.
More preferably, the width of the cross section of the through groove (6) is 70-150 μm, and the length of the cross section of the through groove (6) is 2/3 of the side length of the cross section of the micro-channel radiator.
The width of the through groove (6) is required to be enough not to damage the metalized side face of the micro-channel radiator in the laser cutting process, the cross section width of the through groove (6) is generally 40-200 mu m larger than the width of the cutting channel, and preferably, the cross section width of the through groove (6) is 100 mu m larger than the width of the cutting channel.
Preferably, the method for manufacturing the micro flow channel heat sink includes the following steps:
1) taking a silicon chip A and a silicon chip B, and arranging a micro-channel and a shunt network on the surface of any one silicon chip;
2) permanently bonding the silicon chip A and the silicon chip B to obtain a silicon chip C with a built-in micro channel;
3) arranging through grooves around each micro-channel radiator on the silicon wafer C;
4) seed layers are arranged on the upper surface and the lower surface of the silicon wafer C;
5) arranging a metal layer on the surface of the silicon wafer C;
6) arranging a liquid inlet and a liquid outlet on the lower surface of each micro-channel radiator on the silicon chip C;
7) and cutting the through groove by using a laser slicing process to obtain the single micro-channel radiator.
Step 1) etching a micro-channel and a shunt network on the surface of a silicon wafer by using a dry etching process; step 2) also comprises the step of controlling the thickness of the silicon chip C in a proper range by using a thinning and polishing process, wherein the thickness of the silicon chip C is the thickness of the micro-channel radiator; step 3) etching through grooves around each micro-channel radiator on the silicon wafer C by using an etching process; step 4) depositing seed layers on the upper surface and the lower surface of the silicon wafer C by using a sputtering process; step 5) electroplating a metal layer on the surface of the silicon wafer C by using an electroplating process; and 6) etching the liquid inlet and the liquid outlet on the lower surface of each micro-channel radiator on the silicon wafer C by using an etching process.
Preferably, the method for permanently bonding the silicon wafer A and the silicon wafer C in the step 2) comprises the following steps: respectively arranging a layer of silicon dioxide on the bonding surface of the silicon wafer A and the silicon wafer B, controlling the surface roughness of the silicon dioxide layer (7) to be below 1nm, and then bonding the silicon wafer A and the silicon wafer B by using a wafer bonding process.
Controlling the surface roughness of the silicon dioxide layer (7) below 1nm by using a chemical mechanical polishing technology; the wafer bonding process refers to a silicon dioxide fusion bonding process.
Example (b):
as shown in fig. 1 to 10, a micro flow channel heat sink has a thickness of 400 μm:
a micro-channel (2) and a shunt network are arranged in the device, the micro-channel and the shunt network are snakelike, the width of the micro-channel (2) is 30 mu m, and the depth of the micro-channel is 250 mu m; the lower surface is provided with a liquid inlet and a liquid outlet (3), and the liquid inlet and the liquid outlet (3) are round; the surface is equipped with metal level (1), metal level (1) continuous distribution is in six surfaces of microchannel radiator, and the material is Au.
The manufacturing method comprises the following steps:
1) providing two silicon wafers with smooth surfaces;
2) as shown in FIG. 3, a layer of SiO is grown on the surface of the silicon wafer A and the back surface of the silicon wafer B respectively2And the surface roughness is controlled below 1nm by using a chemical mechanical polishing technology;
3) as shown in fig. 4, a dry etching process is used to etch a micro-channel structure on the surface of the silicon wafer a, wherein the width of the channel is 30 μm and the depth is 250 μm;
4) as shown in FIG. 5, SiO was used2Bonding the silicon chip A and the silicon chip B etched with the micro-channel structure together by a fusion bonding process to obtain a silicon chip C embedded with the micro-channel;
5) as shown in fig. 6, the thickness of the silicon wafer C is reduced to be equal to that of the silicon wafer a, and the upper and lower surfaces are polished;
6) as shown in fig. 7, a dry-wet etching process is used to etch through grooves along the cutting streets around each micro-channel heat sink on the silicon wafer C, wherein the width of each through groove is 100 μm larger than the width of each cutting street, and the length of each through groove is 2/3 equal to the side length of each micro-channel heat sink;
7) as shown in fig. 8, a seed layer is sputtered on the surface of the silicon wafer by using a sputtering process, the material is Ti/W/Au, and then electroplating is performed, the electroplating material is Au;
8) as shown in fig. 9, the open micro flow channels were etched in the lower surface of the silicon wafer C using a dry etching process.
In the micro-channel radiator, the high-frequency power chip is welded on the upper surface of the micro-channel radiator in the using process, and then the micro-channel radiator is welded in the microwave box body, so that the power amplifier chip has a continuous microwave ground. The glycol water solution is used as the liquid cooling working medium, when the heat flow density of the chip is 500W/cm2, the chip can be ensured to work normally at the ambient temperature of-10-60 ℃, the output power is kept stable, and the common micro-channel radiator is difficult to have good grounding property while ensuring the radiating effect.
The advantages of the present invention are numerous. Different aspects, embodiments or implementations may yield one or more of the following advantages. One advantage of the present invention is: the micro-channel radiator of the invention well arranges the metal layer on the surface of the micro-channel radiatorThe grounding requirement of a high-frequency system is met. Another advantage of the present invention is: the micro-channel radiator avoids the arrangement of deep TSV holes on the micro-channel radiator, reduces the processing difficulty and the manufacturing cost of the micro-channel radiator, and ensures the integration density of a circuit and the reliability of a structure. Yet another advantage of the present invention is: the micro-channel has radiating fins with high depth-to-width ratio and a shunt network, and can meet the requirement that the heat flow density is more than 500W/cm2The heat dissipation requirements.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.
Claims (3)
1. A manufacturing method of a micro-channel radiator is characterized in that through grooves are formed in the periphery of each micro-channel radiator, the surface of each micro-channel radiator is metalized, and a laser slicing process is utilized to cut the through grooves to separate the micro-channel radiators to obtain single micro-channel radiators;
the method comprises the following steps:
1) taking a silicon chip A and a silicon chip B, and arranging a micro-channel and a shunt network on the surface of any one silicon chip;
2) permanently bonding the silicon chip A and the silicon chip B to obtain a silicon chip C with a built-in micro channel;
3) arranging through grooves around each micro-channel radiator on the silicon wafer C;
4) seed layers are arranged on the upper surface and the lower surface of the silicon wafer C;
5) arranging a metal layer on the surface of the silicon wafer C;
6) arranging a liquid inlet and a liquid outlet on the lower surface of each micro-channel radiator on the silicon chip C;
7) and cutting the through groove by using a laser slicing process to obtain the single micro-channel radiator.
2. The method of claim 1, wherein the width of the cross section of the through-groove is 40 to 200 μm, and the length of the cross section of the through-groove is at least 1/2 times the length of the side of the cross section of the micro flow channel heat sink.
3. The method for manufacturing a micro flow channel heat sink as claimed in claim 1, wherein the method for permanently bonding the silicon chip A and the silicon chip B in the step 2) comprises: respectively arranging a layer of silicon dioxide on the bonding surface of the silicon wafer A and the silicon wafer B, controlling the surface roughness of the silicon dioxide layer to be below 1nm, and then bonding the silicon wafer A and the silicon wafer B by using a wafer bonding process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811035191.XA CN109411427B (en) | 2018-09-06 | 2018-09-06 | Micro-channel radiator and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811035191.XA CN109411427B (en) | 2018-09-06 | 2018-09-06 | Micro-channel radiator and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109411427A CN109411427A (en) | 2019-03-01 |
| CN109411427B true CN109411427B (en) | 2020-06-09 |
Family
ID=65463894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811035191.XA Active CN109411427B (en) | 2018-09-06 | 2018-09-06 | Micro-channel radiator and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109411427B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110255490A (en) * | 2019-06-26 | 2019-09-20 | 中国电子科技集团公司第三十八研究所 | Integrated fluid channel radiator structure, preparation method and wafer level packaging structure |
| TWI695467B (en) | 2019-07-10 | 2020-06-01 | 國立交通大學 | Thermal dissipation structure for integrated circuits |
| CN110739230A (en) * | 2019-09-24 | 2020-01-31 | 杭州臻镭微波技术有限公司 | manufacturing method of three-dimensional stacked heat dissipation module aiming at radio frequency chip heat concentration points |
| CN111584448B (en) * | 2020-05-19 | 2022-03-29 | 上海先方半导体有限公司 | Chip embedded micro-channel module packaging structure and manufacturing method |
| CN111916415A (en) * | 2020-06-17 | 2020-11-10 | 山东大学 | SiC heat sink based on laser processing and preparation method thereof |
| CN112086415B (en) * | 2020-08-11 | 2022-08-02 | 中国电子科技集团公司第二十九研究所 | Novel multi-scale heat management structure and micro-assembly method |
| CN112203398B (en) * | 2020-09-30 | 2022-04-12 | 浙江集迈科微电子有限公司 | Liquid cooling heat dissipation process for PCB |
| CN112349660B (en) * | 2020-10-23 | 2023-05-12 | 中国电子科技集团公司第二十九研究所 | Silicon-based micro-channel radiator embedded with heating structure, application method and preparation method |
| CN112768432B (en) * | 2020-12-31 | 2022-04-01 | 中国电子科技集团公司第五十五研究所 | Microfluid adapter plate integrated with high-power radio frequency chip and preparation method thereof |
| CN113784501B (en) * | 2021-08-17 | 2022-12-13 | 中国电子科技集团公司第二十九研究所 | Micro-channel embedded printed circuit board integrated structure and manufacturing method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4400869A (en) * | 1981-02-12 | 1983-08-30 | Becton Dickinson And Company | Process for producing high temperature pressure transducers and semiconductors |
| US6242778B1 (en) * | 1998-09-22 | 2001-06-05 | International Business Machines Corporation | Cooling method for silicon on insulator devices |
| JP2003037223A (en) * | 2001-07-26 | 2003-02-07 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| CN1988763A (en) * | 2005-12-09 | 2007-06-27 | 通用电气公司 | Method of making an electronic device cooling system |
| CN201788963U (en) * | 2010-08-19 | 2011-04-06 | 邸弋 | Copper water cooled radiator |
| CN107240578A (en) * | 2017-07-21 | 2017-10-10 | 西安电子科技大学 | Carborundum fluid channel radiator structure of three dimensional integrated circuits and preparation method thereof |
| CN107591380A (en) * | 2017-08-03 | 2018-01-16 | 电子科技大学 | A kind of fluid channel radiator of integrated temperature sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI637534B (en) * | 2013-11-29 | 2018-10-01 | 晶元光電股份有限公司 | Light-emitting device |
-
2018
- 2018-09-06 CN CN201811035191.XA patent/CN109411427B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4400869A (en) * | 1981-02-12 | 1983-08-30 | Becton Dickinson And Company | Process for producing high temperature pressure transducers and semiconductors |
| US6242778B1 (en) * | 1998-09-22 | 2001-06-05 | International Business Machines Corporation | Cooling method for silicon on insulator devices |
| JP2003037223A (en) * | 2001-07-26 | 2003-02-07 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| CN1988763A (en) * | 2005-12-09 | 2007-06-27 | 通用电气公司 | Method of making an electronic device cooling system |
| CN201788963U (en) * | 2010-08-19 | 2011-04-06 | 邸弋 | Copper water cooled radiator |
| CN107240578A (en) * | 2017-07-21 | 2017-10-10 | 西安电子科技大学 | Carborundum fluid channel radiator structure of three dimensional integrated circuits and preparation method thereof |
| CN107591380A (en) * | 2017-08-03 | 2018-01-16 | 电子科技大学 | A kind of fluid channel radiator of integrated temperature sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109411427A (en) | 2019-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109411427B (en) | Micro-channel radiator and manufacturing method thereof | |
| CN108766897B (en) | Packaging method of three-dimensional heterostructure for realizing high-power GaN device layer heat dissipation | |
| CN108666283B (en) | Micro-channel radiator structure and preparation method thereof | |
| US7139172B2 (en) | Apparatus and methods for microchannel cooling of semiconductor integrated circuit packages | |
| US11121060B2 (en) | Electronics assemblies and cooling structures having metalized exterior surface | |
| JP5052350B2 (en) | Heat sink with microchannel cooling | |
| CN111446221B (en) | Low-flow-resistance chip embedded array micro-jet radiator and manufacturing method thereof | |
| US20100208431A1 (en) | Patterned Composite Structures and Methods of Making the Same | |
| US20060002087A1 (en) | Apparatus and methods for microchannel cooling of semiconductor integrated circuit packages | |
| CN110010491B (en) | Manufacturing process of cubic structure of multilayer stacked radio frequency microsystem | |
| CN112086415B (en) | Novel multi-scale heat management structure and micro-assembly method | |
| CN108461460B (en) | Two-phase separation microchannel heat sink | |
| CN116546869A (en) | Novel micro-flow thermoelectric radiator, manufacturing method thereof and radiating method | |
| CN112340694B (en) | Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip | |
| EP2095416B1 (en) | Method of manufacturing openings in a substrate, in particular of vias through the substrate | |
| CN112349660B (en) | Silicon-based micro-channel radiator embedded with heating structure, application method and preparation method | |
| CN115000802A (en) | Semiconductor laser based on micro-channel secondary substrate | |
| CN112234037B (en) | Embedded diamond silicon-based micro-fluid heat dissipation adapter plate and preparation method thereof | |
| CN114783970A (en) | High-power radio frequency array three-dimensional heterogeneous micro-channel cooling device | |
| US10026674B2 (en) | Cooling structure for integrated circuits and methods for forming such structure | |
| JP2002334967A (en) | Three-dimensional semiconductor chip | |
| CN114256178A (en) | High-power chip heat dissipation structure and preparation method thereof | |
| Zhou et al. | Chip-scale cooling of power semiconductor devices: Fabrication of Jet impingement design | |
| Lau et al. | Development of package level hybrid silicon heat sink for hotspots cooling | |
| CN116613122A (en) | Heat sink compatible with micro-channel embedded in liquid silicon through hole communication hole and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |