CN109411349A - A kind of High Linear millimetric wave device based on the modulation of charge branch - Google Patents
A kind of High Linear millimetric wave device based on the modulation of charge branch Download PDFInfo
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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Abstract
The present invention relates to a kind of High Linear millimetric wave devices and preparation method thereof based on distribution of charges regulation, the production method includes: the two sides production source electrode and drain electrode on epitaxial substrate, and epitaxial substrate includes the substrate layer for successively growing formation, AIN nucleating layer, GaN buffer layer, AlN insert layer and AlGaN potential barrier；The growth of passivation layer in AlGaN potential barrier；Gate regions on the passivation layer are lithographically formed gradual change groove structure, and gate regions include gradual change recess region, grid foot region and grid cover region；Gate electrode figure is lithographically formed on grid cover region；Gate electrode is made to gate electrode figure evaporation grid metal；Metal interconnection layer is made in source electrode and the drain electrode, production obtains the High Linear millimeter wave device regulated and controled based on distribution of charges.Present invention efficiently solves device continuous wave work when center difficulty radiate the problem of.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to a kind of High Linear millimeter based on the modulation of charge branch
Wave device.
Background technique
After first generation elemental semiconductors Si, Ge and the second generation compound semiconductor materials GaAs, InP etc., the
There is direct band gap, forbidden bandwidth to be continuously adjusted for three generations's semiconductor GaN, AlN, InN and its alloy, and range processed is big, disruptive field intensity
High, the advantages that saturated electron drift velocity is fast, thermal conductivity is high, anti-radiation performance is good.Using third generation semiconductor material as matrix
Electronic device has higher frequency, higher power, greatly improves device performance, has filled up the first and second generation half rapidly
Conductor material is unable to satisfy the demand of field of semiconductor devices.GaN base high electron mobility transistor (High simultaneously
Electron Mobility Transistor, abbreviation HEMT) structure can play the advantage of nitride material to greatest extent,
It has hetero-junctions channel two-dimensional electron gas density compared with Si base MOS and GaAs based high electron mobility transistor (HEMTs)
High, the advantages that saturation current and output power, switching speed are fast, breakdown voltage is high, and can adapt to high pressure, high temperature, irradiation
Equal harsh environments.In dual-use necks such as Connectors for Active Phased Array Radar, electronic warfare system, 5G communication, smart grid, 4C industries
Domain has boundless application prospect.
However, in order to reach the requirement of current mechanics of communication, High Linear, powerful device are essential.We are signified
High Linear be mainly that mutual conductance can keep a higher peak value within the scope of very big grid voltage.And mutual conductance is under low field voltage
It is mainly influenced by the increase of capacitance, capacitor tends to be saturated under high field voltage, what mutual conductance at this time was mainly reduced by mobility
It influences.Current mainstream way is to increase barrier layer thickness to reduce the partial pressure on channel, makes channel electrons under high grid voltage
Mobility is in a higher level；The peak electric field that field plate structure comes intensity grid edge is introduced in the devices, so that channel
The planarization of electric field branch；Make its device at work as the increase channel substep of grid voltage is opened using channel configuration, second
Channel is opened to make up the trend that transconductance value reduces under high gate voltage；Or gate-source capacitance is carried out using Fin-HEMT structure
Modulation makes its trend with capacitor increase under high field voltage to make up the trend of mobility reduction.But these methods are all
Extra parasitic parameter is introduced, mutual conductance peak value is reduced, affects device frequency characteristic.
Currently, at home and in the world, mainly being changed come modulation device electric field branch using Fin structure using field plate structure
Kind device core graphics system (Core Graphics System, abbreviation Cgs), multi-threshold tune is carried out using channel configuration
Control compensates the trend of mutual conductance reduction by the unlatching of the second channel.Method is as follows:
A.Chini in 2005 et al. proposes to serve as a contrast using can be the measures such as groove and Metal field plate structure under mountain in 4H-SiC
A High Linear device that can be applied to C-band is prepared on bottom, field plate is located above grid from grid center to 0.7 μm of one end of leakage
Place carrys out peak electric field under intensity grid.Wherein the mutual conductance of device is 260mS/mm, and continuous wave output power is 18.8W/mm under 4GHz
(PAE=43%), PAE peak value is 74% (power output 6W/mm), and IMD is up to 45dBc.Bibliography Power and
Linearity Characteristics of Field-Plated Recessed-Gate AlGaN/GaN HEMT.IEEE
ELECTRON DEVICE LETTERS,VOL.25,NO.5,2005。
2006, Palacios.Tom á s et al., which proposed a kind of double channel device, so that mutual conductance is planarized, the device
Bring multi-threshold and gate capacitance modulation are successively opened under different grid voltages by channel, and causes source and drain resistance with IDS's
The amplitude for increasing and changing is slowed down compared with single-groove road device.The device transconductance finally prepared is 0.95S/mm, fmaxReach
40GHz, and the IMD at 10GHz is up to 30dBc.Bibliography Use of Double-Channel
Heterostructures to Improve the Access Resistance and Linearity in GaN-Based
HEMTs.IEEE TRANSACTION ELECTRON DEVICE,VOL.53,NO.3,2006。
2017, Kai Zhang et al. prepared the device with more flat transconductance curve using Fin structure, grid voltage across
Lead the amplitude of oscillation and reach 1.5V~1V, it is equivalent after output electric current be 1.5A/mm, mutual conductance is up to 570mS/mm, fT/fMaxIt is 31/
78GHz, IM3 are up to 52dBc, improve 5.5dBc compared with planar structure.Bibliography High-Linearity AlGaN/GaN
FinFETs for Microwave Power Applications.ELECTRON DEVICE LETTERS Vol.38No.5
2017。
In conclusion current, the production of the GaN base device of High Linear is all using field plate structure, double heterojunction in the world
The mode of material and Fin-HEMT device architecture makes mutual conductance more flat in terms of capacitor or mobility, realizes High Linear
Power output.But these methods have the disadvantage that
1, after device uses field plate structure, due to introducing parasitic capacitance, device frequency performance degradation, nothing above grid
Method works at higher frequencies；
2, using after double channel, the introducing of double heterojunction is difficult to control material component, the back potential barrier of excessively high component device
So that two channels influence each other, electron concentration is reduced for meeting；Too far, then can not be controlled by grid voltage becomes on the second channel distance surface
Leak channel becomes easier to puncture；
3, using after Fin-HEMT, effective channel area of device reduces device, and indices is caused half-and-half to be sacrificed, and
And excessive gate capacitance is introduced so that frequency characteristic is degenerated seriously.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of height based on distribution of charges regulation
Linear millimetric wave device and preparation method thereof.The technical problem to be solved in the present invention is achieved through the following technical solutions:
The embodiment of the invention provides a kind of production method of High Linear millimetric wave device based on distribution of charges regulation, packets
Include step:
S1, the two sides production source electrode 7 on epitaxial substrate and drain electrode 8, wherein the epitaxial substrate includes successively giving birth to
Long substrate layer 1, AIN nucleating layer 2, GaN buffer layer 3, AlN insert layer 4 and the AlGaN potential barrier 5 formed；
S2, the growth of passivation layer 6 in the AlGaN potential barrier 5；
S3, the gate regions on the passivation layer 6 are lithographically formed gradual change groove structure, wherein the gate regions include gradually
Become recess region 901, grid foot region 902 and grid cover region 903；
S4, gate electrode figure is lithographically formed on the grid cover region 903；
S5, gate electrode 9 is made to gate electrode figure evaporation grid metal；
S6, metal interconnection layer 10 is made in the source electrode 7 and the drain electrode 8, production is obtained based on distribution of charges
The High Linear millimeter wave device of regulation.
In a specific embodiment, the step S1 further include:
S11, two sides photolithographic source electrode pattern region and drain electrode patterns region in the AlGaN potential barrier 5；
S12, metal processing is evaporated to the source electrode graphics field and the drain electrode patterns region respectively, so that
Ohmic metal is formed in the AlGaN potential barrier 5；
S13, the epitaxial substrate of evaporated metal processing is subjected to thermal anneal process, so that the source electrode graphics field
The GaN buffer layer 3 is sunk down into the ohmic metal in AlGaN potential barrier 5 described in the drain electrode patterns region, completes institute
State the production of source electrode 8 and the drain electrode 9.
In a specific embodiment, before the step S3 further include:
The two sides that the GaN epitaxial layer 3 is successively etched into from the two sides of the AlGaN potential barrier 5, in the GaN epitaxy
The two sides of layer 3 form the active area and are electrically isolated structure.
In a specific embodiment, the step S3 includes:
S31, it is coated with anti-etching photoresist on the passivation layer 6, forms glue-line；
S32, the grid district center on gate regions the first side to the glue-line on the glue-line, set along grid width direction
There is multiple first exposures section, along multiple first exposure sections in grid width direction from first side of gate regions to described
Grid district center is exposed according to the preset dose being gradually increased, and gate regions second side on the glue-line is to the glue
Grid district center on layer is equipped with multiple second exposures section along grid width direction, along multiple described the second of grid width direction
Exposure section is exposed from described gate regions second side to the grid district center according to the preset dose being gradually increased, in institute
State the glue-type structure that glue-line forms gradual change groove；
S33, the passivation layer 6 in etching removal grid foot region and gradual change are recessed in the glue-type structural region of the gradual change groove
The AlGaN potential barrier 5 in slot region forms gradual change groove structure in the AlGaN potential barrier 5.
In a specific embodiment, the preset dose is 4.7~7.0C/m2。
In a specific embodiment, the step S6 includes:
S61, the photoetching metal interconnection region in the source electrode 7 of metal interconnection aperture area and drain electrode 8；
S62, the evaporation interconnection metal on the metal interconnection region in the source electrode 7 and the drain electrode 8；
S63, the epitaxial substrate for completing interconnection evaporation of metal is removed, production obtains the height regulated and controled based on distribution of charges
Linear millimetric wave device.
In addition, in another embodiment of the invention, a kind of High Linear millimeter wave based on distribution of charges regulation
Device is made by the production method of the High Linear millimetric wave device based on distribution of charges regulation of above embodiment.
Compared with prior art, beneficial effects of the present invention:
1. the present invention is realized using the exposure property of electron beam resist and the etching ratio of lithographic technique in grid recess region
The groove of gradual change depth carries out gradual change to (2DEG) density of two-dimensional electron gas under grid by the thickness of different AlGaN potential barriers
Branch's modulation, to realize High Linear, whole process does not introduce parasitic parameter, securely and reliably.
2. the present invention carries out recess etch to AlGaN potential barrier under grid, and other region AlGaN potential barriers keep original thickness
Degree, can guarantee not reduce device output current while grid-control ability in this way.
3. the present invention is modulated by the branch to carrier density under grid, current density tune when device is opened is realized
Control, electric current is mainly controlled in the two sides of device, more effectively solve device continuous wave work when center difficulty heat dissipation ask
Topic.
Detailed description of the invention
Fig. 1 is a kind of preparation flow schematic diagram with High Linear millimetric wave device of the invention；
Fig. 2 a- Fig. 2 g is a kind of preparation method schematic diagram with High Linear millimetric wave device of the invention；
Fig. 3 is a kind of three-dimensional structure schematic diagram with High Linear millimetric wave device of the invention；
Fig. 4 a- Fig. 4 f is that a kind of photoetching side view of gradual change groove structure with High Linear millimetric wave device of the invention is shown
It is intended to.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
The original material that the present embodiment makes the GaN base high electron mobility transistor of gradual change grid recess is epitaxial substrate,
The epitaxial substrate successively includes substrate 1, AlN nucleating layer 2, GaN buffer layer 3, AlN insert layer 4 and AlGaN potential barrier from bottom to top
Layer 5.
Referring to figure 3., Fig. 3 is a kind of three-dimensional structure schematic diagram with High Linear millimetric wave device of the invention.
The material of substrate 1 described in the present embodiment is the insulating sapphire or Si or SiC with a thickness of 400 μm~500 μm,
AlN nucleating layer 2 with a thickness of 180nm, GaN buffer layer 3 with a thickness of 1.5 μm~2 μm, AlN insert layer 4 with a thickness of 1nm；AlGaN
Barrier layer 5 with a thickness of 20nm~25nm, wherein aluminium group is divided into 20%~30%, the gradual change groove of the gate electrode 9 on surface
Length of the region 901 along grid length direction is 0.1 μm~0.12 μm, and the height in grid foot region 902 is 120nm~200nm, grid cover area
The width in domain 903 is 360nm~540nm；The gradual change groove structure depth of 901 part of gradual change recess region is along grid width direction change
Range is 0nm~16nm；The thickness of the passivation layer 6 of 901 two sides of gradual change recess region corresponds to the height in grid foot region 902.
The present embodiment selects to make depth of groove on sic substrates to be 0~16nm, and passivation layer thickness is the high line of 120nm
Property GaN device structure.
Fig. 1 is please referred to, Fig. 1 is a kind of preparation flow schematic diagram with High Linear millimetric wave device of the invention, production
Specific step is as follows:
Step 1, two sides production source electrode 7 and drain electrode 8 on the GaN buffer layer 3 of epitaxial substrate, wherein the extension
Substrate includes the substrate 1 for successively growing formation, AIN nucleating layer 2, GaN buffer layer 3, AlN insert layer 4 and AlGaN potential barrier 5.
Step 11, two sides photolithographic source electrode pattern region and drain electrode patterns region in the AlGaN potential barrier 5.
5min is toasted firstly, the epitaxial substrate is placed on 200 DEG C of hot plate, removes epitaxial substrate moisture to dry；It connects down
Come, in the AlGaN potential barrier 5 two sides carry out removing glue PMGI-SF6 gluing and whirl coating, under the revolving speed of 2000rpm its
The whirl coating of formation is placed on 200 DEG C of hot plate with a thickness of the epitaxial substrate of 350nm with a thickness of 350nm and toasts 5min by whirl coating；
Then, the gluing and whirl coating of photoresist EPI621 are carried out on removing glue PMGI-SF6, its whirl coating is thick under the revolving speed of 5000rpm
Degree is 770nm, then whirl coating is placed on 90 DEG C of hot plate with a thickness of the epitaxial substrate of 770nm and toasts 1min；Later, light will be completed
The gluing and the epitaxial substrate after whirl coating of photoresist EPI621 is put into stepper to source electrode region and drain regions
Interior photoresist EPI621 is exposed the exposure that intensity is 240ms；Finally, the epitaxial substrate for completing exposure is put into developer solution
Middle about 85s after the double-deck glue in source electrode region to be removed and drain regions, is rinsed and is used to it using ultrapure water
Nitrogen is dried up, and source electrode 7 and 8 litho pattern of drain electrode are formed.
Step 12 is evaporated metal processing to the source electrode graphics field and the drain electrode patterns region respectively,
So that forming ohmic metal in the AlGaN potential barrier 5.
Counterdie is carried out firstly, the epitaxial substrate of 8 litho pattern of active electrode 7 and drain electrode is put into plasma degumming machine
Processing, the time of processing are 5min；Next, by counterdie, treated that epitaxial substrate is put on electron beam evaporation platform, anti-
Answering Chamber vacuum degree is 2 × 10-6Gold is evaporated to the epitaxial substrate entire surface for having made previous step under conditions of Torr
Belonging to, wherein the metal is the metal stack structure being successively made of from bottom to top tetra- layers of metal of Ti, Al, Ni and Au, whereinMetal in source electrode graphics field and drain electrode patterns region is Europe
Nurse metal；Later, to complete ohmic metal evaporation epitaxial substrate carry out stripping technology, be sequentially placed into order acetone soln,
It is cleaned in stripper, acetone soln and ethanol solution, to remove outside source electrode graphics field and drain electrode patterns region
Ohmic metal, photoresist and removing glue；Finally, being removed outside source electrode graphics field and drain electrode patterns region with ultrapure water
Ohmic metal, photoresist and the epitaxial substrate for removing glue, and with being dried with nitrogen.
The epitaxial substrate for completing evaporated metal processing is carried out thermal anneal process by step 13, so that the source electrode figure
Ohmic metal in region and the drain electrode patterns region in the AlGaN potential barrier 5 sinks down into the GaN buffer layer 3, complete
At the production of the source electrode 8 and the drain electrode 9.
Epitaxial substrate after completion step S12 is put into rapid thermal anneler, in N2850 DEG C, 30s are carried out under environment
Quick thermal annealing process, so that the ohmic metal in source electrode graphics field and drain electrode patterns region in AlGaN potential barrier 5
Electrode sags complete source electrode 7 and leakage to form Ohmic contact between ohmic metal and buffer layer 3 to GaN buffer layer 3
The production of electrode 8, as shown in Figure 2 a.
Step 2 makes active area electric isolution structure in the AlGaN potential barrier 5.
Step 21, the photoetching electrically isolated area in the AlGaN potential barrier 5.
5min is first toasted firstly, the epitaxial substrate that completion source electrode 7 and drain electrode 8 make is placed on 200 DEG C of hot plate；
Then, the epitaxial substrate surface to anti-etching photoresist EPI621 carry out revolving speed be 3500rpm whirl coating, formed with a thickness of
The glue-line of 400nm, and the epitaxial substrate after whirl coating is placed on 90 DEG C of hot plate and toasts 1min；Later, by the extension after baking
Substrate is put into stepper and is exposed to the photoresist in electrically isolated area, exposure intensity 260ms；Finally, will
Device after completing exposure is put into 60s in developer solution EPD1000, to remove the photoresist in electrically isolated area, surpasses to it
It pure water rinsing and is dried with nitrogen.
Step 22, the two sides that the GaN epitaxial layer (3) are successively etched into from the two sides of the AlGaN potential barrier (5),
The two sides of the GaN epitaxial layer (3) form the active area and are electrically isolated structure.
Using inductive couple plasma (ICP) technique with SF6For etching gas, it is sequentially etched the AlGaN of electrically isolated area
The two-dimensional electron gas (2DEG) of device is carved and is broken by barrier layer 5, AlN insert layer 4 and GaN epitaxial layer 3, and on device both sides, shape is at L-shaped
Shape is the electric isolution structure of the active area formed shown in Fig. 2 b, and the present embodiment electrically isolated area etches into GaN epitaxial layer 3, with
Realize the mesa-isolated of device active region, total etching depth is 120nm, and etching power is 80W, etch period 120s；
Later, will carve the epitaxial substrate after breaking two-dimensional electron gas to be sequentially placed into sequence is acetone soln, stripper, acetone soln and ethyl alcohol
It is cleaned in solution, to remove the overseas photoresist of electricity isolated region；Finally, device after being cleaned with ultrapure water and using nitrogen
Air-blowing is dry.As shown in Figure 2 b.In specific experiment, it will form multiple devices on one substrate, in order to make between device mutually not
The two-dimensional electron gas (2DEG) of device is carved and is broken, i.e., multiple devices is isolated by interference.
Step 3, the growth of passivation layer 6 in the AlGaN potential barrier 5.
Specifically, the device after being dried with nitrogen is put into chemical plasma enhancing chemical vapor deposition (PECVD) equipment,
It is 200W, SiH in power4Flow is 100sccm, NH4Flow is 100sccm, pressure 600mTorr, the item that temperature is 300 DEG C
Under part, the Passivation Treatment that the time is 1h is carried out to 5 surface of AlGaN potential barrier, the SiN passivation layer 6 of 120nm thickness is formed, such as Fig. 2 c
It is shown.
Step 4, the gate regions on the passivation layer 6 are lithographically formed gradual change groove structure, wherein the gate regions include
Gradual change recess region 901, grid foot region 902 and grid cover region 903.
Refer to Fig. 4 a- Fig. 4 f, Fig. 4 a- Fig. 4 f be the present embodiment a kind of gradual change with High Linear millimetric wave device it is recessed
The lithography step schematic side view of slot structure；Fig. 4 a is that a kind of photoresist with High Linear millimetric wave device of the present embodiment applies
Cloth schematic side view；Fig. 4 b is a kind of photoresist exposure schematic side view with High Linear millimetric wave device of the present embodiment；
Fig. 4 c is a kind of removal portion of the passivating layer schematic side view with High Linear millimetric wave device of the present embodiment；Fig. 4 d is this reality
Apply a kind of schematic side view of the passivation layer in etching removal grid foot region with High Linear millimetric wave device of example；Fig. 4 e is this
A kind of side view signal for removing the AlGaN potential barrier in gradual change recess region with High Linear millimetric wave device of embodiment
Figure；Fig. 4 f is a kind of schematic side view of gradual change groove structure with High Linear millimetric wave device of the present embodiment.Wherein, scheme
In 4a- Fig. 4 f, 11 be glue-line.
Step 41 is coated with anti-etching photoresist on the passivation layer 6, forms glue-line, as shown in fig. 4 a.
Epitaxial substrate made from step 3 is placed on 200 DEG C of hot plate and toasts 5min；Then extension, then after baking
Substrate surface carries out the whirl coating that revolving speed is 4000rpm to anti-etching electron beam resist PMMA, forms the glue that thickness is about 360nm
Layer, the epitaxial substrate after whirl coating is placed on 180 DEG C of hot plate and toasts 2min.
Step 42, the grid district center on gate regions the first side to the glue-line on the glue-line, along grid width side
To be equipped with it is multiple first exposure section, along grid width direction it is multiple it is described first exposure sections from first side of gate regions to
The grid district center is exposed according to the preset dose being gradually increased, and gate regions second side on the glue-line is to institute
The grid district center on glue-line is stated, multiple second exposures section is equipped with along grid width direction, along the multiple described of grid width direction
Second exposure section is exposed from described gate regions second side to the grid district center according to the preset dose being gradually increased,
The glue-type structure of gradual change groove is formed in the glue-line, as shown in Figure 4 b.
Epitaxial substrate after completing whirl coating and toasting is put into electron beam lithography machine (EBL), change agent is carried out to grid foot region
The highly sensitive exposure of the TRG (Transitional Recessed Gate) of amount, wherein the length in grid foot region is 100nm, wide
Degree is 50um, as shown in Figure 2 d.
In the present embodiment, a specific example is equipped with 16 groups of 32 exposure sections of gradual change dosage along grid width direction,
The variation range of its dosage is 4.7~7.0 (C/m2).The present embodiment thinks that exposure dose 4.7 is along the multiple of grid width direction
First exposure section is carried out from first side of gate regions to the grid district center according to the preset dose being gradually increased
The initial exposure dose of exposure；And exposure dose 4.7 is also multiple second exposure sections along grid width direction from described
The initial exposure dose that gate regions second side is exposed to the grid district center according to the preset dose being gradually increased, exposure
Dosage 7.0 is the exposure dose of grid district center.
Wherein, exposure dose is gradually increased from 4.7 to 7.0 in 16 groups of 32 exposure sections.
Epitaxial substrate after completion TRG high sensitivity exposure is put into the glue that gradual change groove is removed in corresponding developer solution
Part photoresist in type structural region, as illustrated in fig. 4 c, the epitaxial substrate for the exposure that is near completion is put into developer solution AR600-546
Middle development 90s, then the fixing processing for carrying out that the time is 30s is put it into isopropanol, finally it is dried with nitrogen, finally
The glue-type structure of gradual change groove is formed, the variation range of dosage is 4.7~7.0 (C/m2) in, the first exposure section is corresponding
Exposure dose is 4.7C/m2When photoresist with a thickness of 90nm, the corresponding exposure dose in the first exposure section is 4.7C/m2When photoetching
For glue with a thickness of 90nm, grid center exposure dosage is 7C/m2When photoresist with a thickness of 0nm.
Step 43, etching remove the AlGaN potential barrier in 901 region of passivation layer 6 and grid recess in grid foot region 902
5。
Using inductive couple plasma (ICP) etching technics with CF4The SiN in grid foot region 902 is removed for etching gas
Passivation layer 6, the depth of etching are 120nm, top electrode power 60W, lower electrode power 10W, CF4Flow 25sccm, O2Flow
10sccm, pressure 5mT, etch period are about 240s, as shown in figure 4d.
Using ICP etching technics with BCl3The AlGaN potential barrier 5 in gradual change recess region 901 is removed for etching gas, is carved
The depth of erosion is 16nm, top electrode power 120W, lower electrode power 10W, BCl3Flow 20sccm, Cl2Flow 8sccm, pressure
5mT, etching power are 40W, and etch period is about 8min, form gradual change groove structure.Gradual change exposes schematic front view such as Fig. 4 e
With shown in 4f.
Step 5, on passivation layer 6, utilize the grid cover region 903 of electric lithography art lithography gate electrode 9.
Step 51, epitaxial substrate after completing step 4 surface carry out the whirl coating of T-type grid double-tiered arch dam.
Firstly, by the AlGaN potential barrier in 901 region of passivation layer 6 and grid recess in etching removal grid foot region 902
Epitaxial substrate after 5 steps is placed on 200 DEG C of hot plate and toasts 5min；Secondly, device surface after baking is to anti-etching electricity
Beamlet photoresist PMMA-MAA carries out the whirl coating that revolving speed is 2000rpm, forms the bottom end glue-line that thickness is about 350nm, and will get rid of
The device prepared after glue is placed on 180 DEG C of hot plate and toasts 2min；Finally, on removing glue PMMA-MAA glue surface to anti-etching electricity
Beamlet photoresist PMMA carries out the whirl coating that revolving speed is 4000rpm, forms the top glue-line that thickness is about 630nm, and completion is got rid of
The device that glue forms the top glue-line that thickness is about 630nm, which is placed on 150 DEG C of hot plate, toasts 1min.
Device after completing whirl coating and toasting is put into electron beam lithography machine EBL in 903 target area of grid cover by step 52
Photoresist carry out a point indifference and expose, wherein the length in grid cover region is 500nm, width 50um.As shown in Figure 2 e.
Step 53, will complete exposure after device be put into developer solution MIBK:IPA=1:3 develop 4min to reach complete
The effect of development finally carries out isopropanol immersion and is dried with nitrogen to it.
Step 6 is lithographically formed gate electrode figure on the grid cover region.
Step 7 makes gate electrode 9 to gate electrode figure evaporation grid metal.
There to be the device for being lithographically formed gate electrode figure to be put into plasma degumming machine and carry out counterdie processing, power is
200W, O2Flow is 50sccm, operating time 30s.By counterdie, treated that device is put into electron beam evaporation platform, is reacting
Chamber vacuum degree is 2 × 10-6Grid metal is evaporated to epitaxial substrate entire surface under conditions of Torr, which is under
The metal stack structure being successively made of upwards Ni, Au and Ni three-layer metal, wherein
The grid metal in grid recess region 901, grid foot region 902 and grid cover region 903 is the gate electrode 9 of device.As shown in figure 2f.
Step 8 makes metal interconnection layer 10 in the source electrode 7 and the drain electrode 8, and production is obtained based on charge point
The High Linear millimeter wave device of cloth regulation.
Step 81, the photoetching metal interconnection region in the source electrode 7 of metal interconnection aperture area and drain electrode 8.
5min is toasted firstly, the device for completing metal interconnection aperture etching is placed on 200 DEG C of hot plate；Secondly, in gold
Belong to the gluing and whirl coating that removing glue PMGI-SF6 is carried out in the source electrode 8 and drain electrode 9 of interconnection aperture area, in revolving speed
Glue is removed under 4500rpm with a thickness of 350nm, and device is placed on 200 DEG C of hot plate and toasts 5min；Later, on removing glue
The gluing and whirl coating of photoresist EPI621 are carried out, photoresist is at revolving speed 5000rpm with a thickness of 770nm, and device is placed on
1min is toasted on 90 DEG C of hot plate；Still later, the device of the gluing and whirl coating of completing photoresist EPI621 is put into step-by-step movement light
The photoresist in metal interconnection region is exposed in quarter machine；It is removed finally, the device for completing exposure is put into developer solution
Photoresist and removing glue in metal interconnection region, and carry out ultrapure water to it and be dried with nitrogen, form metal interconnection light
Needle drawing shape.
Step 82, the evaporation interconnection metal in the source electrode 7 and the drain electrode 8.
Counterdie is carried out under vacuum conditions firstly, the device for having metal interconnection litho pattern is put into plasma degumming machine
Processing, power 200W, O2Flow is 50sccm, and the processing time is 5min.
Then, device is put into electron beam evaporation platform, is 2 × 10 in reaction chamber vacuum degree-6It is right under conditions of Torr
The epitaxial substrate entire surface for having made previous step is evaporated interconnection metal, wherein the interconnection metal be from bottom to top according to
It is secondary by with a thickness ofTi and with a thickness ofAu composition metal stack structure, be located at metal interconnection region in
Metal be metal interconnection layer 10.
Step 83 removes the device for completing interconnection evaporation of metal, and production obtains the height regulated and controled based on distribution of charges
Linear millimeter wave device.
The device for completing interconnection evaporation of metal is removed, to remove interconnection metal, the light outside metal interconnection layer region
Photoresist and removing glue；Finally, completing the preparation of device with ultrapure water device and with being dried with nitrogen.As shown in Figure 2 g.
To sum up, a kind of High Linear millimetric wave device based on distribution of charges modulation is made by the above method.
The present embodiment is realized using the exposure property of electron beam resist and the etching ratio of lithographic technique in grid recess region
The groove of gradual change depth is modulated by the branch that the thickness of different AlGaN potential barriers carries out gradual change to 2DEG density under grid, thus
Realize High Linear, whole process does not introduce parasitic parameter, securely and reliably.
The present embodiment carries out recess etch to AlGaN potential barrier under grid, and other region AlGaN potential barriers keep original thickness
Degree, can guarantee not reduce device output current while grid-control ability in this way.
The present embodiment is modulated by the branch to carrier density under grid, realizes current density tune when device is opened
Control, electric current is mainly controlled in the two sides of device, more effectively solve device continuous wave work when center difficulty heat dissipation ask
Topic.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (7)
1. a kind of production method of the High Linear millimetric wave device based on distribution of charges regulation, which is characterized in that comprising steps of
S1, two sides production source electrode (7) on epitaxial substrate and drain electrode (8), wherein the epitaxial substrate includes successively giving birth to
Long substrate layer (1), AIN nucleating layer (2), GaN buffer layer (3), AlN insert layer (4) and the AlGaN potential barrier (5) formed；
S2, the growth of passivation layer (6) on the AlGaN potential barrier (5)；
S3, the gate regions on the passivation layer (6) are lithographically formed gradual change groove structure, wherein the gate regions include gradual change
Recess region (901), grid foot region (902) and grid cover region (903)；
S4, gate electrode figure is lithographically formed on the grid cover region (903)；
S5, gate electrode (9) are made to gate electrode figure evaporation grid metal；
S6, metal interconnection layer (10) are made in the source electrode (7) and the drain electrode (8), production is obtained based on charge point
The High Linear millimeter wave device of cloth regulation.
2. a kind of production method of High Linear millimetric wave device based on distribution of charges regulation according to claim 1,
It is characterized in that, the step S1 further include:
S11, two sides photolithographic source electrode pattern region and drain electrode patterns region on the AlGaN potential barrier (5)；
S12, metal processing is evaporated to the source electrode graphics field and the drain electrode patterns region respectively, so that in institute
It states and forms ohmic metal on AlGaN potential barrier (5)；
S13, the epitaxial substrate of evaporated metal processing is subjected to thermal anneal process, so that the source electrode graphics field and institute
It states the ohmic metal in drain electrode patterns region on the AlGaN potential barrier (5) and sinks down into the GaN buffer layer (3), complete institute
State the production of source electrode (8) and the drain electrode (9).
3. a kind of production method of High Linear millimetric wave device based on distribution of charges regulation according to claim 1,
It is characterized in that, before the step S3 further include:
The two sides that the GaN epitaxial layer (3) are successively etched into from the two sides of the AlGaN potential barrier (5), in the GaN epitaxy
The two sides of layer (3) form active area and are electrically isolated structure.
4. a kind of production method of High Linear millimetric wave device based on distribution of charges regulation according to claim 1,
It is characterized in that, the step S3 includes:
S31, it is coated with anti-etching photoresist on the passivation layer (6), forms glue-line；
S32, the grid district center on gate regions the first side to the glue-line on the glue-line are equipped with more along grid width direction
A first exposure section, along multiple first exposure sections in grid width direction from first side of gate regions to the grid
District center is exposed according to the preset dose being gradually increased, and in gate regions second side to the glue-line on the glue-line
Grid district center, along grid width direction be equipped with it is multiple second exposure section, along grid width direction it is multiple it is described second exposure
Section is exposed from described gate regions second side to the grid district center according to the preset dose being gradually increased, in the glue
Layer forms the glue-type structure of gradual change groove；
S33, etching removes the passivation layer (6) and gradual change groove in grid foot region in the glue-type structural region of the gradual change groove
The AlGaN potential barrier (5) in region forms gradual change groove structure in the AlGaN potential barrier (5).
5. a kind of production method of High Linear millimetric wave device based on distribution of charges regulation according to claim 4, institute
Stating preset dose is 4.7~7.0C/m2。
6. a kind of production method of High Linear millimetric wave device based on distribution of charges regulation according to claim 1,
It is characterized in that, the step S6 includes:
S61, the photoetching metal interconnection region in the source electrode (7) of metal interconnection aperture area and drain electrode (8)；
S62, the evaporation interconnection metal on the metal interconnection region in the source electrode (7) and the drain electrode (8)；
S63, the epitaxial substrate for completing interconnection evaporation of metal is removed, production obtains the High Linear regulated and controled based on distribution of charges
Millimetric wave device.
7. a kind of High Linear millimetric wave device based on distribution of charges regulation, which is characterized in that described to be regulated and controled based on distribution of charges
High Linear millimetric wave device be suitable for the described in any item methods of claim 1~6.
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| PCT/CN2019/076274 WO2020052204A1 (en) | 2018-09-10 | 2019-02-27 | High-linearity millimeter wave device based on charge partial modulation |
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| CN112335039A (en) * | 2020-07-08 | 2021-02-05 | 英诺赛科（珠海）科技有限公司 | Electronic device and method for manufacturing the same |
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Application publication date: 20190301 |