CN109402588A - 基于磨砂表面的防指纹镀膜制品及防指纹镀膜方法 - Google Patents

基于磨砂表面的防指纹镀膜制品及防指纹镀膜方法 Download PDF

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CN109402588A
CN109402588A CN201811635343.XA CN201811635343A CN109402588A CN 109402588 A CN109402588 A CN 109402588A CN 201811635343 A CN201811635343 A CN 201811635343A CN 109402588 A CN109402588 A CN 109402588A
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张帅伟
曹宇
刘政权
黄文博
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Shangqiu Jinzhenyuan Electronic Technology Co Ltd
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Abstract

本发明针对磨砂表面镀膜存在的问题，提供一种基于磨砂表面的防指纹镀膜制品及防指纹镀膜方法，所述防指纹镀膜基材的表面自下而上依次镀制过渡层和防指纹薄膜层，所述过渡层所用材料为氧化硅，所述防指纹薄膜层所用材料为防指纹薄膜AF材料，所述防指纹镀膜基材的表面与所述过渡层之间还镀制有打底层。通过打底层打底之后，防指纹膜层的镀膜效果更佳，能更好地实现防指纹功能。

Description

基于磨砂表面的防指纹镀膜制品及防指纹镀膜方法
技术领域
本发明属于防指纹镀膜技术领域，具体涉及一种基于磨砂表面的防指纹镀膜制品及防指纹镀膜方法。
背景技术
几年来手机壳追求防指纹效果，对于表面光滑的手机壳（金属、玻璃、塑胶等）可以采用常规的镀膜方法，如喷涂，操作简单、成本低廉；但是手机壳或者其他基材表面是砂面或者拉丝面等不平整光滑的基材，采用常规的喷涂、真空蒸镀方法，形成的膜层不均匀、耐磨性差，达不到基材需求。
中国发明专利CN107227444A提供了一种防指纹薄膜镀膜方法及防指纹保护薄膜镀膜制品，其具体步骤是：(1)将待镀基材进行镀膜前的预清洗处理；(2)在低真空度的条件下，对待镀基材进行表面放电处理；(3)在高真空度条件下，采用磁控溅射方式，基材表面沉积氧化硅或者氧化铝硬质过渡层；(4)采用热蒸发方式，在基材表面生成均匀的防指纹薄膜AF材料；(5)真空室内，防指纹薄膜材料蒸发完成后，关闭热蒸发电源，完成防指纹薄膜的制备流程；(6)真空室恢复大气压后，取出完成防指纹薄膜镀制的基材；该专利是在基材表面依次镀制过渡层和防指纹薄膜层，这种方法对于表面光滑的基材来说，可以达到较好的防指纹效果，而对于磨砂表面，镀膜效果欠佳。
发明内容
本发明针对磨砂表面镀膜存在的问题，提供一种基于磨砂表面的防指纹镀膜制品及防指纹镀膜方法，通过打底层打底之后，防指纹膜层的镀膜效果更佳，能更好地实现防指纹功能。
本发明采用如下技术方案：
一种基于磨砂表面的防指纹镀膜制品，所述防指纹镀膜基材的表面自下而上依次镀制过渡层和防指纹薄膜层，所述过渡层所用材料为氧化硅，所述防指纹薄膜层所用材料为防指纹薄膜AF材料，所述防指纹镀膜基材的表面与所述过渡层之间还镀制有打底层。
优选地，所述打底层所用的材料为氧化铬。
优选地，所述打底层厚度10-50nm，优选25nm；过渡层厚度30-100nm，优选60nm；防指纹薄膜层5-20nm，优选15nm；
所述基于磨砂表面的防指纹镀膜制品的镀膜方法，具体包括如下步骤：
（1）将待镀膜基材进行预处理初步清除脏污；
（2）将待镀膜基材置于真空室内，打开直流轰击电源，进行离子清洗以去除表面粘附的灰尘；
（3）采用磁控溅射方法溅射氧化铬，在待镀膜基材表面沉积氧化铬打底层；
（4）再次采用磁控溅射方法溅射氧化硅，在氧化铬打底层表面沉积氧化硅过渡层；
（5）最后热蒸发防指纹薄膜AF材料，在氧化硅过渡层表面沉积防指纹薄膜层，至此镀膜完成。
优选地，步骤（2）中，所述离子清洗时的真空度为0.1~0.3pa，氩气流量为500~1000sccm，光栅角度10~30°，直流轰击电源的电压500~1000V，进行离子清洗5~10min。
优选地，步骤（3）中，镀膜室的真空度为0.2~0.4pa，氩气流量为30~100sccm，氧气流量为100~200sccm，光栅角度1~10°，镀膜电流设为5~15A，时间1.5~5min。
优选地，步骤（4）中，镀膜室的真空度为0.2~0.4pa，氩气流量为40~100sccm，氧气流量为120~200sccm，光栅角度1~10°，镀膜电流设为8~20A，时间4~10min。
优选地，步骤（5）中，热蒸发防指纹薄膜AF材料分段进行，第一阶段：600A~700A蒸发0.5min~1min；第二阶段：700A~800A蒸发0.5min~1min；第三阶段：820A~900A蒸发3min~8min；第四阶段：920A~1000A蒸发1min~3min。
本发明的有益效果如下：
本发明提供的基于磨砂表面的防指纹镀膜制品设有三层镀膜层，膜层总厚度0.1um左右，不影响磨砂效果：
（1）打底层：氧化铬，主要作用是处理基材砂表面，易于过渡层吸附，而且打底层的设置也有利于可以提高镀膜后基材的橡皮耐磨测试性能；
（2）过渡层：氧化硅，主要作用是为AF材料的吸附打基础，同时过渡层的设置，有利于提高镀膜后基材的钢丝绒耐磨测试性能，增强基材表面的硬度；
（3）防指纹层：氟硅高聚物，可与过渡层的硅结合，增大结合力，且氟硅高聚物具有极强的疏水疏油效果；
本发明所镀制膜层无色透明，不会影响基材本身的颜色，防指纹效果好，耐磨性能优异，且明显缩短了生产周期，降低了生产成本。
具体实施方式
为了使本发明的技术目的、技术方案和有益效果更加清楚，下面结合具体实施例对本发明的技术方案作出进一步的说明。
基于磨砂表面的防指纹镀膜制品的镀膜方法，采用真空镀膜机，具体包括如下步骤：
1.将待镀膜基材进行镀膜前的清洗和擦拭，除去基材表面待油渍、指纹、灰尘等脏污；
2.将基材放置在镀膜治具上，放置16颗AF药剂于真空镀膜设备蒸发装置的蒸发舟上，后将镀膜治具依次放入镀膜室内，用酒精擦拭炉门橡胶圈，防止炉门漏气，关闭炉门抽真空；
3.真空室抽真空至6.0×10-3pa~3.0×10-3pa，然后充入氩气流量为800sccm，调整光栅角度25°，使镀膜室内保持低真空，优选0.2~0.25pa，打开直流轰击电源，电压750V，进行离子清洗8min，去除基材表面粘附的灰尘；
4.离子清洗完毕，关闭氩气充入阀，打开光栅（角度调为0°），继续抽真空至6.0×10- 3pa~3.0×10-3pa，然后调整氩气流量40sccm和氧气流量115sccm，调整光栅角度2°，保持镀膜室内为低真空，优选0.2~0.25pa，采用磁控溅射方法镀氧化铬，Cr靶可为平面靶或者圆柱对靶，镀膜电流设为10A，时间2.5min，此为打底层，主要作用是处理基材砂表面，易于过渡层吸附，增加打底层的厚度可以提高镀膜后基材的橡皮耐磨测试性能；
5.打底层镀膜完毕，然后调整氩气流量50sccm和氧气流量130sccm，光栅角度2°，保持镀膜室内为低真空，优选0.2~0.25pa，采用磁控溅射方法镀氧化硅，Si靶可为平面靶或者圆柱对靶，镀膜电流设为10A，时间6.5min，此为过渡层，主要作用是为AF药剂的吸附打基础，同时增加过渡层的厚度，可以提高镀膜后基材的钢丝绒耐磨测试性能，增强基材表面的硬度；
6.过渡层镀膜完毕，关闭氩气和氧气阀，打开光栅（角度调为0°），继续抽真空至6.0×10-3pa~3.0×10-3pa时，关闭光栅（角度调为90°），打开蒸发装置电源设置电流进行AF药剂阶梯蒸发，具体蒸发过程如下：先650A蒸发0.5min，接着750A蒸发0.5min，然后860A蒸发5min，最后950A蒸发2min，由此可确保AF药剂蒸发均匀，吸附性好，避免药剂浪费、基材表面生成浮灰；
7.AF药剂蒸发完毕，关闭蒸发电源，打开光栅（角度调为0°），继续抽真空1~5min，目的是稳定膜层，确保膜层吸附牢固；
8.关闭光栅，打开放气阀放真空，取出治具，更换AF药剂进行下炉镀膜，取下基材进行镀膜后水滴角测试、钢丝绒磨擦后水滴角测试和橡皮擦磨擦后水滴角测试。
取以上镀膜方法所得镀膜制品进行性能测试的结果如下：
1.所得镀膜制品的初始水滴角≥110°；
2.钢丝绒耐磨测试：0000#钢丝绒（日本进口），厚度10±2.5mm，压头尺寸20×20mm，配重1000gf磨擦1500圈（一个往返算1圈），单向位移30mm，水滴角≥100°；
3.橡皮耐磨测试：三星测试橡皮，直径6mm，配重500gf磨擦1000圈（一个往返算1圈），单向位移30mm，水滴角≥90°；
由以上测试结果可见，本发明不仅防指纹效果好，而且耐磨性能优异。
以上水滴角测试所采用的水滴角测量设备为多功能触角测定仪。
最后所应说明的是：上述实施例仅用于说明而非限制本发明的技术方案，任何对本发明进行的等同替换及不脱离本发明精神和范围的修改或局部替换，其均应涵盖在本发明权利要求保护的范围之内。

Claims (8)

1.一种基于磨砂表面的防指纹镀膜制品，所述防指纹镀膜基材的表面自下而上依次镀制过渡层和防指纹薄膜层，所述过渡层所用材料为氧化硅，所述防指纹薄膜层所用材料为防指纹薄膜AF材料，其特征在于：所述防指纹镀膜基材的表面与所述过渡层之间还镀制有打底层。
2.根据权利要求1所述的基于磨砂表面的防指纹镀膜制品，其特征在于：所述打底层所用的材料为氧化铬。
3.根据权利要求1或2所述的基于磨砂表面的防指纹镀膜制品，其特征在于：所述打底层厚度10-50nm，过渡层厚度30-100nm，防指纹薄膜层厚度5-20nm。
4.权利要求1至3任一项所述基于磨砂表面的防指纹镀膜制品的镀膜方法，其特征在于，具体包括如下步骤：
（1）将待镀膜基材进行预处理清除脏污；
（2）将待镀膜基材置于真空室内，打开直流轰击电源，进行离子清洗以去除表面粘附的灰尘；
（3）采用磁控溅射方法溅射氧化铬，在待镀膜基材表面沉积氧化铬打底层；
（4）再次采用磁控溅射方法溅射氧化硅，在氧化铬打底层表面沉积氧化硅过渡层；
（5）最后热蒸发防指纹薄膜AF材料，在氧化硅过渡层表面沉积防指纹薄膜层，至此镀膜完成。
5.根据权利要求4所述的基于磨砂表面的防指纹镀膜制品的镀膜方法，其特征在于，步骤（2）中，所述离子清洗时的真空度为0.1~0.3pa，直流轰击电源的电压500~1000V，进行离子清洗5~10min。
6.根据权利要求4所述的基于磨砂表面的防指纹镀膜制品的镀膜方法，其特征在于，步骤（3）中，镀膜室的真空度为0.2~0.4pa，氧气流量为100~200sccm，镀膜电流设为5~15A，时间1.5~5min。
7.根据权利要求4所述的基于磨砂表面的防指纹镀膜制品的镀膜方法，其特征在于，步骤（4）中，镀膜室的真空度为0.2~0.4pa，氧气流量为120~200sccm，镀膜电流设为8~20A，时间4~10min。
8.根据权利要求4所述的基于磨砂表面的防指纹镀膜制品的镀膜方法，其特征在于，步骤（5）中，热蒸发防指纹薄膜AF材料分段进行，第一阶段：600A~700A蒸发0.5min~1min；第二阶段：700A~800A蒸发0.5min~1min；第三阶段：820A~900A蒸发3min~8min；第四阶段：920A~1000A蒸发1min~3min。
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