CN109360877B - 一种具有In和Al掺杂,In渐变生长的低温P型GaN外延方法 - Google Patents
一种具有In和Al掺杂,In渐变生长的低温P型GaN外延方法 Download PDFInfo
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- 230000012010 growth Effects 0.000 title claims abstract description 51
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 35
- 230000008859 change Effects 0.000 title claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 23
- 238000004020 luminiscence type Methods 0.000 claims abstract description 19
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 238000010348 incorporation Methods 0.000 claims abstract description 13
- 150000004767 nitrides Chemical class 0.000 claims abstract description 7
- 230000004913 activation Effects 0.000 claims abstract description 5
- 238000002347 injection Methods 0.000 claims abstract description 4
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- 230000006798 recombination Effects 0.000 claims abstract description 4
- 238000005215 recombination Methods 0.000 claims abstract description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 119
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 36
- 239000011777 magnesium Substances 0.000 claims description 16
- 229910002704 AlGaN Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
- 238000005915 ammonolysis reaction Methods 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
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Abstract
本发明提供了一种具有In和Al掺杂,In渐变生长的低温P型GaN外延方法,属于光电子技术领域。本发明的制备方法生长掺杂Al和In,In渐变掺入的低温氮化镓层,In的掺入,可提高Mg的掺杂浓度,降低Mg的活化能,从而提高有效空穴的注入,另外因为In原子较大,In的突然掺入晶格失配较大,In的渐变掺入使得该层与最后一个垒层之间的的晶格失配得以缓冲,有利于保护整个LED的结晶质量;Al的掺入,可以稍稍抬高导带能阶,有效阻挡电子从多量子阱发光层向低温p型GaN层中迁移,从而减少了从多量子阱发光层进入低温p型GaN层中电子和低温p型GaN层中空穴之间发生的非辐射复合。
Description
技术领域
本发明涉及一种具有In和Al掺杂,In渐变生长的低温P型GaN外延方法,属于光电子技术领域。
背景技术
做为节能领域的支柱产业,LED行业从发展之初就受到政府的大力扶持。自2010年开始LED照明市场呈快速发展态势,目前国内LED已经获得长足发展。随着几年内投资LED行业的企业不断增加,市场竞争越来越激烈。为了在未来的市场中占据更大的优势,开发高性能LED芯片成为当务之急。高性能LED芯片取决于高性能的LED外延片。
目前,氮化镓基发光二极管的发光效率受到内量子效率和提取效率两方面的限制。内量子效率相对较低的其中一个原因是载流子浓度不够,尤其是P型区空穴浓度很难达到。提高载流子浓度的方法一般是通过高温生长P型氮化镓,然后氮气退火来实现,提高镁在氮化镓中的激活效率。
发明内容
本发明针对现有氮化镓发光二极管电子溢流严重及P型区空穴浓度不足的缺点,提出一种能显著提高发光效率的GaN基LED外延片及其制备方法。
本发明的技术方案:
一种具有In和Al掺杂,In渐变生长的低温P型GaN外延方法所述的低温P型GaN外延片,包括蓝宝石衬底、铝镓氮低温缓冲层、高温氮化镓层、N型氮化镓层、应力释放层、多量子阱发光层、低温p型GaN层、p型AlGaN层、p型GaN层和p型接触层;
所述的蓝宝石衬底上生长有铝镓氮低温缓冲层,低温缓冲层上面生长高温氮化镓层,高温氮化镓层上面生长有Si掺杂氮化镓即N型氮化镓层,在N型氮化镓层上生长有应力释放层,应力释放层上生长多量子阱发光层,多量子阱发光层上生长低温p型GaN层,低温p型GaN层上生长p型AlGaN层,p型AlGaN层上生长p型GaN层,p型GaN层上生长p型接触层;
所述的低温P型GaN掺杂Al和In,且In渐变掺入,In的掺入用于提高Mg的掺杂浓度,降低Mg的活化能,从而提高有效空穴的注入,另外因为In原子较大,In的突然掺入晶格失配较大,In的渐变掺入使得该层与最后一个垒层之间的的晶格失配得以缓冲,有利于保护整个LED的结晶质量;Al的掺入,用于提高导带能阶,有效阻挡电子从多量子阱发光层向低温p型GaN层中迁移,从而减少从多量子阱发光层进入低温p型GaN层中电子和低温p型GaN层中空穴之间发生的非辐射复合。
所述的蓝宝石衬底组分为三氧化二铝;
所述的铝镓氮低温缓冲层的厚度为20-30nm;
所述的高温氮化镓层为非掺杂氮化镓,其厚度为1.5-3μm;
所述的Si掺杂氮化镓为N型氮化镓层,其厚度为2-4.5μm,N型氮化镓层中硅的掺杂浓度为5×1018-9×1019/cm-3;
所述的应力释放层包含阱层和垒层,阱层为铟镓氮材料,垒层为氮化镓材料,生长周期为10-30;
所述的多量子阱发光层包含阱层和垒层,阱层为铟镓氮材料,垒层为氮化镓材料,多量子阱周期为5-20;
所述的低温p型GaN层,为掺杂Al和In(In渐变)的低温氮化镓层与P型GaN层交替生长,结构采用P-AlxInyGa1-x-yN、P-GaN交替生长,整体厚度在10-100nm,温度在500-900度,镁掺杂浓度为1×1019~5×1020/cm-3,生长周期为2-20;进一步温度控制在600-800度,生长周期控制在5-15;所述的低温p型GaN层中Al摩尔组分为低温P型GaN的5-30%,In的摩尔组分为低温P型GaN的0~30%;其中,x=0.05~0.3,y=0~0.3;
所述的p型AlGaN层,温度在600-1000度,厚度为10-50nm;进一步温度控制在750-900度,厚度控制在20-40nm;
所述的p型GaN层,生长高温高浓度的P型氮化镓层,生长温度800-1200℃,掺镁的氮化镓层的厚度为5-30nm;温度控制在850-1100℃,厚度控制在10-25nm;
所述的p型接触层,生长温度500-1000℃,厚度为0.5-5nm;进一步温度控制在600-900℃,厚度控制在1-3nm。
本发明的有益效果:本发明的制备方法,采用金属有机物化学气相沉积(MOCVD)法,在蓝宝石或碳化硅衬底上按现有技术依次生长铝镓氮低温缓冲层、高温氮化镓层、N型氮化镓层、应力释放层、多量子阱发光层、低温p型GaN层、p型AlGaN层、p型GaN层和p型接触层;采用P-AlxInyGa1-x-yN/P-GaN交替生长的方式来生长低温P型GaN;所述的低温p型GaN层中Al摩尔组分为低温P型GaN的5-30%,In的摩尔组分为低温P型GaN的0~30%。与现有氮化镓发光二极管相比,本发明的制备方法生长掺杂Al和In,In渐变的低温氮化镓层,In的掺入,可提高Mg的掺杂浓度,降低Mg的活化能,从而提高有效空穴的注入,另外因为In原子较大,In的突然掺入晶格失配较大,In的渐变掺入使得该层与最后一个垒层之间的的晶格失配得以缓冲,有利于保护整个LED的结晶质量;Al的掺入,可以稍稍抬高导带能阶,有效阻挡电子从多量子阱发光层向低温p型GaN层中迁移,从而减少了从多量子阱发光层进入低温p型GaN层中电子和低温p型GaN层中空穴之间发生的非辐射复合;
本发明的一种具有In和Al掺杂,In渐变生长的低温氮化镓层,采用P-AlInGaN/P-GaN超晶格组成的低温P型GaN层可以形成二维载流子气,且二维载流子气有利于空穴的均匀扩展,从而有效提高了空穴的迁移率,增加了电子与空穴的复合效率,并进一步提高了LED的发光效率;
本发明一种具有In和Al掺杂,In渐变生长的低温P型氮化镓层,低温生长P型GaN,可以减小Mg向InGaN/GaN量子阱有源区中扩散,减小P型外延层的高温生长过程对量子阱发光层的伤害,获得高发光强度的氮化镓系发光二极管。
附图说明
图1是传统的氮化镓发光二极管外延片的LED结构示意图。
图中:1蓝宝石衬底;2低温缓冲层;3高温GaN层;4Si掺杂GaN层;5应力释放层;6多量子阱发光层;7低温p型GaN层(分为P-AlxInyGa1-x-yN/P-GaN两层);8p型AlGaN层;9p型GaN层;10p型接触层。
具体实施方式
以下结合附图和技术方案,进一步说明本发明具体生长方式。
实施例1
生长蓝宝石衬底GaN基LED外延片,按照以下步骤生长:
(1)将蓝宝石衬底1放入MOCVD设备的反应室中,在氢气气氛下加热到1140℃,处理10分钟;
(2)在蓝宝石衬底1上生长低温缓冲层2即氮化镓缓冲层,生长温度540℃,厚度20nm;
(3)在上述低温缓冲层2上生长高温GaN层3即非掺杂氮化镓层,生长温度1000℃,厚度2μm;
(4)在上述高温GaN层3上生长Si掺杂GaN层4即N型氮化镓层,生长温度为1110℃,生长厚度3μm;其中,Si掺杂GaN层4的硅掺杂浓度为4×1019/cm-3;
(5)在Si掺杂GaN层4上生长应力释放层5即高温量子阱层,其中,阱层为铟镓氮材料,垒层为氮化镓材料,生长温度为900℃,多量子阱生长周期为20;
(6)在应力释放层5上生长多量子阱发光层6,多量子阱发光层包含阱层和垒层,其中阱层为铟镓氮材料,垒层为氮化镓材料,生长温度为805℃,多量子阱生长周期为12。
(7)在多量子阱发光层6上生长低温p型GaN层7,低温p型GaN层掺有Al和In(In渐变),结构采用P-AlInGaN,P-GaN交替生长,整体厚度在30nm,低温氮化镓层的生长温度在830℃,Al摩尔组分在10%,In的摩尔组分由0渐变到10%(step 2%),生长周期为6;
(8)在低温p型GaN层7上生长p型AlGaN层8,温度为850度,厚度为30nm,镁掺杂浓度为1×1020/cm-3;
(9)在p型AlGaN层8上生长高温高浓度的P型氮化镓层9,生长温度1000℃,镁掺杂浓度为5×1020/cm-3;其中,掺镁的氮化镓层的厚度为15nm;
(10)在p型GaN层9上生长P型接触层10,生长温度750℃,镁掺杂浓度为1×1021/cm-3,厚度为1.5nm。
与传统结构相比,使用本方法的GaN基LED外延片制作出来的LED,发光效率提高约5%。
Claims (8)
1.一种具有In和Al掺杂,In渐变生长的低温P型GaN外延方法,其特征在于,所述的低温P型GaN外延片包括蓝宝石或碳化硅衬底、铝镓氮低温缓冲层、高温氮化镓层、N型氮化镓层、应力释放层、多量子阱发光层、低温p型GaN层、p型AlGaN层、p型GaN层和p型接触层;
所述的蓝宝石衬底上生长有铝镓氮低温缓冲层,低温缓冲层上面生长高温氮化镓层,高温氮化镓层上面生长有Si掺杂氮化镓即N型氮化镓层,在N型氮化镓层上生长有应力释放层,应力释放层上生长多量子阱发光层,多量子阱发光层上生长低温p型GaN层,低温p型GaN层上生长p型AlGaN层,p型AlGaN层上生长p型GaN层,p型GaN层上生长p型接触层;
所述的低温P型GaN掺杂Al和In,且In渐变掺入,In的掺入用于提高Mg的掺杂浓度,降低Mg的活化能,从而提高有效空穴的注入,另外因为In原子较大,In的突然掺入晶格失配较大,In的渐变掺入使得该层与最后一个垒层之间的的晶格失配得以缓冲,有利于保护整个LED的结晶质量;Al的掺入,用于提高导带能阶,有效阻挡电子从多量子阱发光层向低温p型GaN层中迁移,从而减少从多量子阱发光层进入低温p型GaN层中电子和低温p型GaN层中空穴之间发生的非辐射复合;
所述的蓝宝石衬底组分为三氧化二铝;
所述的铝镓氮低温缓冲层的厚度为20-30nm;
所述的高温氮化镓层为非掺杂氮化镓,其厚度为1.5-3μm;
所述的Si掺杂氮化镓为N型氮化镓层,其厚度为2-4.5μm,N型氮化镓层中硅的掺杂浓度为5×1018-9×1019/cm-3;
所述的应力释放层包含阱层和垒层,阱层为铟镓氮材料,垒层为氮化镓材料,生长周期为10-30;
所述的多量子阱发光层包含阱层和垒层,阱层为铟镓氮材料,垒层为氮化镓材料,多量子阱周期为5-20;
所述的低温p型GaN层,为掺杂Al和In的低温氮化镓层与P型GaN层交替生长,其中In渐变掺入,结构采用P-AlxInyGa1-x-yN、P-GaN交替生长,整体厚度在10-100nm,温度在500-900度,镁掺杂浓度为1×1019~5×1020/cm-3,生长周期为2-20;所述的低温p型GaN层中Al摩尔组分为低温P型GaN的5-30%,In的摩尔组分为低温P型GaN的0~30%;其中,x=0.05~0.3,y=0~0.3;
所述的p型AlGaN层,温度在600-1000度,厚度为10-50nm;
所述的p型GaN层,生长高温高浓度的P型氮化镓层,生长温度800-1200℃,掺镁的氮化镓层的厚度为5-30nm;
所述的p型接触层,生长温度500-1000℃,厚度为0.5-5nm。
2.根据权利要求1所述的具有In和Al掺杂,In渐变生长的低温P型GaN外延方法,其特征在于,所述的低温p型GaN层温度控制在600-800度,生长周期控制在5-15。
3.根据权利要求1或2所述的具有In和Al掺杂,In渐变生长的低温P型GaN外延方法,其特征在于,所述的p型AlGaN层,温度控制在750-900度,厚度控制在20-40nm。
4.根据权利要求1或2所述的具有In和Al掺杂,In渐变生长的低温P型GaN外延方法,其特征在于,所述的p型GaN层温度控制在850-1100℃,厚度控制在10-25nm。
5.根据权利要求3所述的具有In和Al掺杂,In渐变生长的低温P型GaN外延方法,其特征在于,所述的p型GaN层温度控制在850-1100℃,厚度控制在10-25nm。
6.根据权利要求1、2或5所述的具有In和Al掺杂,In渐变生长的低温P型GaN外延方法,其特征在于,所述的p型接触层温度控制在600-900℃,厚度控制在1-3nm。
7.根据权利要求3所述的具有In和Al掺杂,In渐变生长的低温P型GaN外延方法,其特征在于,所述的p型接触层温度控制在600-900℃,厚度控制在1-3nm。
8.根据权利要求4所述的具有In和Al掺杂,In渐变生长的低温P型GaN外延方法,其特征在于,所述的p型接触层温度控制在600-900℃,厚度控制在1-3nm。
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