CN109346567A - A kind of preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode - Google Patents

A kind of preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode Download PDF

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CN109346567A
CN109346567A CN201811015030.4A CN201811015030A CN109346567A CN 109346567 A CN109346567 A CN 109346567A CN 201811015030 A CN201811015030 A CN 201811015030A CN 109346567 A CN109346567 A CN 109346567A
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layer
preparation
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CN109346567B (en
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刘春杨
吕蒙普
胡加辉
李鹏
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HC Semitek Zhejiang Co Ltd
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HC Semitek Zhejiang Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The invention discloses a kind of preparation method of the epitaxial wafer of light emitting diode and epitaxial wafers, belong to LED technology field.When growing the periodic structure of InGaN/GaN, gallium source, gallium source and NH can be passed through to reflection is intracavitary3Carry out reaction growth GaN, H2With the reversible reaction of methane.Make the periodic structure of InGaN/GaN in N2With NH3Mixed gas under grown, compared with the existing technology in make the periodic structure of InGaN/GaN in N2、NH3And H2Mixed gas, avoid in this programme intracavitary being passed through H to reflecting2, and then promote gallium source and NH3Reaction, so that the carbon atom in gallium source can more leave the periodic structure of InGaN/GaN in the form of methane, carbon atom in the periodic structure of InGaN/GaN is reduced, and then reduce the defects of periodic structure of InGaN/GaN source, defect is reduced in the crystal of the periodic structure of InGaN/GaN, the crystal quality of light emitting diode entirety is improved, and the luminous efficiency of light emitting diode is improved.

Description

A kind of preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode
Technical field
The present invention relates to LED technology field, in particular to a kind of preparation method of the epitaxial wafer of light emitting diode And epitaxial wafer.
Background technique
LED (LightEmittingDiode, light emitting diode) has many advantages, such as that small in size, the service life is long, low in energy consumption, at present It is widely used in automobile signal light, traffic lights, display screen and lighting apparatus.
The epitaxial wafer of existing LED mainly include substrate and stack gradually n-type GaN layer on substrate, stress release layer, Luminescent layer and p-type GaN layer, wherein stress release layer is played and reduced in epitaxial layer commonly used in the stress in release epitaxial layer The effect of defect, stress release layer are usually the periodic structure of InGaN/GaN.
The periodic structure of existing InGaN/GaN is usually all in N when reflecting Intracavity2、NH3And H2Mixing It is grown under the atmosphere of gas, and since gallium can be passed through to reflection is intracavitary in the periodic structure growth of InGaN/GaN Source, gallium source and NH containing carbon atom3Reaction generates GaN, therefore in N2、NH3And H2Mixed gas atmosphere under grow and obtain InGaN/GaN periodic structure in can have certain carbon atom, carbon atom can become defect source as foreign atom, make Obtaining itself can have the defects that certain, periodic structure reduction of InGaN/GaN in the crystal of the periodic structure of InGaN/GaN The effect of the defects of epitaxial layer is limited, limited to the raising of the luminous efficiency of light emitting diode.
Summary of the invention
The embodiment of the invention provides a kind of preparation method of the epitaxial wafer of light emitting diode and epitaxial wafers, can be further Improve the luminous efficiency of light emitting diode.The technical solution is as follows:
The embodiment of the invention provides a kind of preparation method of the epitaxial wafer of light emitting diode, the preparation method includes:
One substrate is provided；
Growing n-type GaN layer over the substrate；
InGaN/GaN preiodic type structure is grown in the n-type GaN layer；
Luminescent layer is grown in the InGaN/GaN preiodic type structure；
P-type GaN layer is grown on the light-emitting layer；
Wherein, the InGaN/GaN preiodic type structure is in N2And NH3Mixed gas atmosphere under grown.
Optionally, in the growth course of the InGaN/GaN preiodic type structure:
The N being passed through in reaction chamber2Gas flow be 100~240L/min, the NH being passed through in the reaction chamber3Gas Flow is 60~160L/min.
Optionally, in the growth course of the InGaN/GaN preiodic type structure:
The N being passed through into the reaction chamber2Gas flow and NH3Gas flow ratio be 1:0.5~1:2.
Optionally, the N2Gas flow and the NH3Gas flow ratio be 1.6:1~1.5:1.
Optionally, the growth temperature of the InGaN/GaN preiodic type structure is 800~900 DEG C.
Optionally, the growth pressure of the InGaN/GaN preiodic type structure is 100~500torr.
Optionally, the growth thickness of the InGaN well layer in the InGaN/GaN preiodic type structure is 2~4nm, described The growth thickness of GaN barrier layer in InGaN/GaN preiodic type structure is 8~10nm.
The embodiment of the invention provides a kind of epitaxial wafer of light emitting diode, the epitaxial wafer uses such as claim 1-7 Described in any item preparation method manufactures.
Technical solution provided in an embodiment of the present invention has the benefit that the periodical knot in growth InGaN/GaN When structure, gallium source, gallium source and NH are passed through to reflection is intracavitary3Carry out reaction growth GaN, H2With the reversible reaction of methane.Make InGaN/ The periodic structure of GaN is in N2With NH3Mixed gas under grown, compared with the existing technology in make period of InGaN/GaN Property structure is in N2、NH3And H2Mixed gas, avoid in this programme intracavitary being passed through H to reflecting2, and then promote gallium source and NH3Instead It answers, so that the carbon atom in gallium source can more leave the periodic structure of InGaN/GaN, InGaN/GaN in the form of methane Periodic structure in carbon atom reduce, and then the defects of periodic structure for reducing InGaN/GaN source, InGaN/ Defect is reduced in the crystal of the periodic structure of GaN, and the crystal quality of light emitting diode entirety is improved, light emitting diode Luminous efficiency is improved.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other Attached drawing.
Fig. 1 is a kind of preparation method flow chart of the epitaxial wafer of light emitting diode provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of the epitaxial wafer of light emitting diode provided in an embodiment of the present invention；
Fig. 3 is that the content of carbon atom in the epitaxial wafer being prepared under three kinds of experimental conditions provided in an embodiment of the present invention is shown It is intended to.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention Formula is described in further detail.
Fig. 1 is a kind of preparation method flow chart of the epitaxial wafer of light emitting diode provided in an embodiment of the present invention.Such as Fig. 1 institute Show, preparation method includes:
S1: a substrate is provided.
Optionally, the substrate in step S1 can be Sapphire Substrate, silicon substrate or silicon carbide substrates, the present invention to this not It is limited.
S2: growing n-type GaN layer on substrate.
S3: InGaN/GaN preiodic type structure is grown in n-type GaN layer.
Wherein, InGaN/GaN preiodic type structure is in N2And NH3Mixed gas atmosphere under grown.
Optionally, the N being passed through in the growth course of InGaN/GaN preiodic type structure in reaction chamber2Gas flow be 100L/min~240L/min, the NH being passed through in reaction chamber3Gas flow be 60L/min~160L/min.In this condition Under can obtain the preferable InGaN/GaN preiodic type structure of crystal quality, guarantee the luminous efficiency of light emitting diode.
Illustratively, the N being passed through into reaction chamber2Gas flow and NH3The ratio of gas flow can be 1:0.5 ~1:2.The crystal quality of the InGaN/GaN preiodic type structure obtained with this condition is preferable, can guarantee light emitting diode Luminous efficiency.
Further, N2Gas flow and NH3Gas flow ratio be 1.6:1~1.5:1.N2With NH3Gas When the ratio of flow is 1.6:1~1.5:1, the luminous efficiency of light emitting diode can obtain larger raising.
Optionally, the growth temperature of InGaN/GaN preiodic type structure is 800~900 DEG C.It obtains with this condition The crystal quality of InGaN/GaN preiodic type structure is preferable, can guarantee the luminous efficiency of light emitting diode.
Further, the growth pressure of InGaN/GaN preiodic type structure is 100~500torr.It obtains with this condition The crystal quality of InGaN/GaN preiodic type structure is preferable, can guarantee the luminous efficiency of light emitting diode.
Optionally, the growth thickness of the InGaN well layer in InGaN/GaN preiodic type structure be 2~4nm, InGaN/GaN weeks The growth thickness of GaN barrier layer in phase type structure is 8~10nm.Light emitting diode can be relatively efficiently improved with this condition Luminous efficiency.
S4: luminescent layer is grown in InGaN/GaN preiodic type structure.
S5: p-type GaN layer is grown on the light-emitting layer.
When growing the periodic structure of InGaN/GaN, gallium source, gallium source and NH can be passed through to reflection is intracavitary3It is reacted Grow GaN, H2With the reversible reaction of methane.Make the periodic structure of InGaN/GaN in N2With NH3Mixed gas under given birth to It is long, compared with the existing technology in make the periodic structure of InGaN/GaN in N2、NH3And H2Mixed gas, avoid in this programme H is passed through to reflection is intracavitary2, and then promote gallium source and NH3Reaction, so that the carbon atom in gallium source more can be with the shape of methane Formula leaves the periodic structure of InGaN/GaN, and the carbon atom in the periodic structure of InGaN/GaN is reduced, and then is reduced The defects of periodic structure of InGaN/GaN source, defect is reduced in the crystal of the periodic structure of InGaN/GaN, shines two The crystal quality of pole pipe entirety is improved, and the luminous efficiency of light emitting diode is improved.
The embodiment of the invention provides a kind of epitaxial wafer of light emitting diode, the epitaxial wafer uses preparation method above-mentioned Manufacture.The crystal quality for the epitaxial wafer being prepared using above method is preferable, can more efficiently improve light emitting diode Luminous efficiency.
Fig. 2 is a kind of structural schematic diagram of the epitaxial wafer of light emitting diode provided in an embodiment of the present invention, the extension in Fig. 2 Piece is using the preparation of method described in Fig. 1.As shown in Fig. 2, the epitaxial wafer may include substrate 1 and stack gradually on substrate 1 Buffer layer 2, the GaN layer 3 to undope, the GaN layer of n-type doping 4, the AlGaN layer of n-type doping 5, InGaN/GaN preiodic type structure 6, the GaN layer 10 of multiple quantum well layer 7, the GaN layer 8 of the first p-type doping, electronic barrier layer 9 and the second p-type doping.
This epitaxial slice structure is relatively simple, and the AlGaN layer of n-type doping can also play release n-type GaN layer growth The effect of the stress generated in the process can weaken the polarity effect of Quantum Well in multiple quantum well layer, improve light emitting diode Luminous efficiency.
The thickness of buffer layer 2 can be 15~35nm.By the thickness of buffer layer be set as 15~35nm can guarantee it is subsequent The quality of the epitaxial layer of growth is preferable.
The thickness of the GaN layer 3 to undope can be 800~1200nm.To guarantee the quality of the epitaxial layer of subsequent growth.n Type doping GaN layer 4 with a thickness of 1~3 micron.
Optionally, the thickness of the AlGaN layer 5 of n-type doping can be 50~100nm.
As shown in Fig. 2, the alternately stacked InGaN layer 61 of InGaN/GaN preiodic type structure 6 and GaN layer 62.It is alternately stacked to set The InGaN layer 61 and this periodic structure of GaN layer 62 set can further function as the effect for reducing epitaxial wafer internal stress, To improve the quality of the epitaxial wafer of light emitting diode.Wherein, the thickness of InGaN layer 61 can be 2~4nm, the thickness of GaN layer 62 Degree can be 8~10nm.
As shown in Fig. 2, multiple quantum well layer 7 includes alternately stacked InGaN layer 71 and GaN layer 72, the thickness of InGaN layer 71 It can be 2~4nm, the thickness of GaN layer 72 can be 8~10nm.
As shown in Fig. 2, electronic barrier layer 8 includes alternately stacked AlGaN layer 81 and GaN layer 82.Using this structure Electronic barrier layer can be used as the recombination region of carrier while electronics can be stopped mobile, increases hole and electronics is multiple The region of conjunction.Increase the luminous efficiency of light emitting diode.
Optionally, the overall thickness of electronic barrier layer 8 can be 20~60nm.Electronic barrier layer limitation within this range can Hole will not excessively be influenced again while blocking electronics is moved to p-type GaN layer by, which enough preferably playing, is moved to multiple quantum well layer. The GaN layer 9 of p-type doping with a thickness of 80~200nm.
It should be noted that in other embodiments of the invention, the extension made of preparation method described in Fig. 1 The epitaxial wafer of other structures, the n that the epitaxial wafer of other structures includes at least substrate and successively grows on substrate can also be used in piece Type layer, InGaN/GaN preiodic type structure, luminescent layer and p-type layer, the present invention are without limitation.
Optionally, in the present embodiment, with trimethyl gallium (TMGa), triethyl-gallium in the growth course of epitaxial structure (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH3) respectively as the source Ga, Al, In and N, above four kinds Chemical combination has good diffusion effect, and easily decomposes and leave required element.
Meanwhile in the present embodiment, with silane (SiH4) it is used as N type dopant, two luxuriant magnesium (CP2Mg it) is used as P-type dopant, Both dopant diffusion effects are preferable.
To increase the understanding of the present invention, experimental conditions a provided herein, experimental conditions b and tri- kinds of experimental conditions c it is different Preparation condition prepares the epitaxial wafer in Fig. 2, in three kinds of experimental conditions, except in InGaN/GaN preiodic type structure growth It is passed through the N of reflection chamber2Flow, NH3Flow and H2Flow it is different except, the condition of the experimental conditions of other epitaxial wafers It is all the same.
In experimental conditions a, it is passed through in InGaN/GaN preiodic type structure growth and reflects intracavitary N2Flow be 190L/min, NH3Flow be 125L/min, H2Flow be 0L/min.
In experimental conditions b, it is passed through in InGaN/GaN preiodic type structure growth and reflects intracavitary N2Flow be 180L/min, NH3Flow be 125L/min, H2Flow be 12L/min.
In experimental conditions c, it is passed through in InGaN/GaN preiodic type structure growth and reflects intracavitary N2Flow be 168L/min, NH3Flow be 125L/min, H2Flow be 24L/min.
Fig. 3 is that the content of carbon atom in the epitaxial wafer being prepared under three kinds of experimental conditions provided in an embodiment of the present invention is shown Be intended to, the abscissa in Fig. 3 be extension built-in testing SIMS (English: secondary ion mass spectroscopy, Chinese: Secondary Ion Mass Spectrometry) when etching depth, the units of data is nm；Ordinate in Fig. 3 is the test elements in epitaxial wafer The concentration of (carbon atom), the unit of data are atoms/cm3。
As shown in figure 3, compared to the H for being passed through 12L/min flow2B experimental conditions, be passed through the H of 24L/min flow2C In experimental conditions, the content of carbon atom wants an order of magnitude on height.
Compared to not being passed through H2A experimental conditions, be passed through the H of 12L/min flow2B experimental conditions in carbon atom Content wants 3.8E+17atoms/cm on height3。
Therefore, selection is not passed through H in InGaN/GaN preiodic type structure growth2, opposite in InGaN/GaN preiodic type knot Structure is passed through H when growing2The content of the carbon atom in epitaxial wafer obtained afterwards will be lacked.
Table 1, which provides, to be respectively prepared by the epitaxial wafer obtained under three kinds of experimental conditions provided in an embodiment of the present invention The brightness data of chip,
Table 1
27*41 and 10*25 in table 1 are the size of chip.
As shown in table 1, for the size of chip be 27*41 the case where, in experimental conditions a, experimental conditions b and experimental conditions Under tri- kinds of experimental conditions of c, it is not passed through H2A experimental conditions in the brightness of chip be lower than and be passed through the H of 12L/min flow2B The brightness 1mW of chip in experimental conditions, is not passed through H2A experimental conditions in chip brightness lower than being passed through 24L/min The H of flow2C experimental conditions in chip brightness 2mW.
The case where size for chip is 10*25 is tested in experimental conditions a, experimental conditions b and tri- kinds of experimental conditions c In the case of, it is not passed through H2A experimental conditions in the brightness of chip be lower than and be passed through the H of 12L/min flow2B experimental conditions in Chip brightness 1mW, be not passed through H2A experimental conditions in the brightness of chip be lower than and be passed through the H of 24L/min flow2C The brightness 2mW of chip in experimental conditions.Therefore, selection is not passed through H in InGaN/GaN preiodic type structure growth2, exist relatively H is passed through when InGaN/GaN preiodic type structure growth2The brightness in epitaxial wafer obtained afterwards wants high.
Table 2, which provides, to be respectively prepared by the epitaxial wafer obtained under three kinds of experimental conditions provided in an embodiment of the present invention The voltage data of chip,
Table 2
27*41 and 10*25 in table 2 are the size of chip.
As shown in table 2, for the size of chip be 27*41 the case where, in experimental conditions a, experimental conditions b and experimental conditions Under tri- kinds of experimental conditions of c, it is not passed through H2A experimental conditions in the voltage of chip be lower than and be passed through the H of 12L/min flow2B The voltage 0.01V of chip in experimental conditions, is not passed through H2A experimental conditions in chip voltage lower than being passed through 24L/ The H of min flow2C experimental conditions in chip voltage 0.02V.
The case where size for chip is 10*25 is tested in experimental conditions a, experimental conditions b and tri- kinds of experimental conditions c In the case of, it is not passed through H2A experimental conditions in the voltage of chip be lower than and be passed through the H of 12L/min flow2B experimental conditions in Chip voltage 0.02V, be not passed through H2A experimental conditions in the voltage of chip be lower than and be passed through the H of 24L/min flow2's The voltage 0.04V of chip in c experimental conditions.
Therefore, selection is not passed through H in InGaN/GaN preiodic type structure growth2, opposite in InGaN/GaN preiodic type knot Structure is passed through H when growing2The voltage in epitaxial wafer obtained afterwards wants high.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.

Claims (8)

1. a kind of preparation method of the epitaxial wafer of light emitting diode, which is characterized in that the preparation method includes:
One substrate is provided；
Growing n-type GaN layer over the substrate；
InGaN/GaN preiodic type structure is grown in the n-type GaN layer；
Luminescent layer is grown in the InGaN/GaN preiodic type structure；
P-type GaN layer is grown on the light-emitting layer；
Wherein, the InGaN/GaN preiodic type structure is in N2And NH3Mixed gas atmosphere under grown.
2. preparation method according to claim 1, which is characterized in that in the growth of the InGaN/GaN preiodic type structure In the process:
The N being passed through in reaction chamber2Gas flow be 100~240L/min, the NH being passed through in the reaction chamber3Gas flow For 60~160L/min.
3. preparation method according to claim 1, which is characterized in that in the growth of the InGaN/GaN preiodic type structure In the process:
The N being passed through into the reaction chamber2Gas flow and NH3Gas flow ratio be 1:0.5~1:2.
4. preparation method according to claim 3, which is characterized in that the N2Gas flow and the NH3Gas stream The ratio of amount is 1.6:1~1.5:1.
5. preparation method according to any one of claims 1 to 4, which is characterized in that the InGaN/GaN preiodic type structure Growth temperature be 800~900 DEG C.
6. preparation method according to any one of claims 1 to 4, which is characterized in that the InGaN/GaN preiodic type structure Growth pressure be 100~500torr.
7. preparation method according to any one of claims 1 to 4, which is characterized in that the InGaN/GaN preiodic type structure In the growth thickness of InGaN well layer be 2~4nm, the growth thickness of the GaN barrier layer in the InGaN/GaN preiodic type structure For 8~10nm.
8. a kind of epitaxial wafer of light emitting diode, which is characterized in that the epitaxial wafer is used as described in claim any one of 1-7 Preparation method manufacture.
CN201811015030.4A 2018-08-31 2018-08-31 Preparation method of epitaxial wafer of light emitting diode and epitaxial wafer Active CN109346567B (en)

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CN110957403A (en) * 2019-12-24 2020-04-03 湘能华磊光电股份有限公司 LED epitaxial structure growth method
CN114420801A (en) * 2021-12-20 2022-04-29 江西兆驰半导体有限公司 Preparation method of light-emitting diode epitaxial wafer and epitaxial wafer

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CN106057995A (en) * 2016-05-31 2016-10-26 华灿光电(苏州）有限公司 Nitride-based luminous diode epitaxial wafer and manufacturing method thereof
CN106356433A (en) * 2016-10-14 2017-01-25 华南理工大学 Light-emitting diode structure with component and thickness gradient stress release layer and preparation method of light-emitting diode structure

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CN103681986A (en) * 2013-11-27 2014-03-26 江西圆融光电科技有限公司 GaN-based light emitting diode epitaxial wafer and preparation method thereof
CN106057995A (en) * 2016-05-31 2016-10-26 华灿光电(苏州）有限公司 Nitride-based luminous diode epitaxial wafer and manufacturing method thereof
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Publication number Priority date Publication date Assignee Title
CN110957403A (en) * 2019-12-24 2020-04-03 湘能华磊光电股份有限公司 LED epitaxial structure growth method
CN110957403B (en) * 2019-12-24 2022-09-30 湘能华磊光电股份有限公司 LED epitaxial structure growth method
CN114420801A (en) * 2021-12-20 2022-04-29 江西兆驰半导体有限公司 Preparation method of light-emitting diode epitaxial wafer and epitaxial wafer

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