CN109346457A - 一种具有电磁隔离功能的igbt功率模块 - Google Patents
一种具有电磁隔离功能的igbt功率模块 Download PDFInfo
- Publication number
- CN109346457A CN109346457A CN201811148997.XA CN201811148997A CN109346457A CN 109346457 A CN109346457 A CN 109346457A CN 201811148997 A CN201811148997 A CN 201811148997A CN 109346457 A CN109346457 A CN 109346457A
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- Prior art keywords
- power module
- electromagnetic isolation
- igbt power
- isolation function
- metal shell
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201811148997.XA CN109346457B (zh) | 2018-09-29 | 2018-09-29 | 一种具有电磁隔离功能的igbt功率模块 |
Applications Claiming Priority (1)
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CN201811148997.XA CN109346457B (zh) | 2018-09-29 | 2018-09-29 | 一种具有电磁隔离功能的igbt功率模块 |
Publications (2)
Publication Number | Publication Date |
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CN109346457A true CN109346457A (zh) | 2019-02-15 |
CN109346457B CN109346457B (zh) | 2021-03-23 |
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CN201811148997.XA Active CN109346457B (zh) | 2018-09-29 | 2018-09-29 | 一种具有电磁隔离功能的igbt功率模块 |
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CN (1) | CN109346457B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113035787A (zh) * | 2019-12-25 | 2021-06-25 | 株洲中车时代半导体有限公司 | 一种逆导型功率半导体模块封装结构及其封装方法 |
CN115775793A (zh) * | 2023-02-10 | 2023-03-10 | 淄博美林电子有限公司 | 具备静电屏蔽功能的igbt模块及其制作方法 |
Citations (9)
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---|---|---|---|---|
US5166772A (en) * | 1991-02-22 | 1992-11-24 | Motorola, Inc. | Transfer molded semiconductor device package with integral shield |
CN1495893A (zh) * | 2002-09-18 | 2004-05-12 | �����ɷ� | 半导体器件及其制造方法 |
JP2009105178A (ja) * | 2007-10-23 | 2009-05-14 | Nichicon Corp | パワー半導体ユニット |
CN102364676A (zh) * | 2011-11-30 | 2012-02-29 | 江苏宏微科技有限公司 | 半导体功率模块封装外壳结构 |
CN102738099A (zh) * | 2012-06-05 | 2012-10-17 | 嘉兴斯达微电子有限公司 | 一种新型高可靠功率模块 |
CN103779307A (zh) * | 2014-01-25 | 2014-05-07 | 嘉兴斯达半导体股份有限公司 | 一种全免清洗软钎焊功率模块及制备方法 |
CN103872024A (zh) * | 2014-02-18 | 2014-06-18 | 南京银茂微电子制造有限公司 | 一种高频防电磁干扰功率模块 |
CN107635387A (zh) * | 2017-08-16 | 2018-01-26 | 中国电子科技集团公司第十八研究所 | 一种防电磁干扰功率调节电路集成模块及装联方法 |
CN207098939U (zh) * | 2017-09-07 | 2018-03-13 | 中车永济电机有限公司 | 具有简易屏蔽装置的功率模块及简易屏蔽装置 |
-
2018
- 2018-09-29 CN CN201811148997.XA patent/CN109346457B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5166772A (en) * | 1991-02-22 | 1992-11-24 | Motorola, Inc. | Transfer molded semiconductor device package with integral shield |
CN1495893A (zh) * | 2002-09-18 | 2004-05-12 | �����ɷ� | 半导体器件及其制造方法 |
JP2009105178A (ja) * | 2007-10-23 | 2009-05-14 | Nichicon Corp | パワー半導体ユニット |
CN102364676A (zh) * | 2011-11-30 | 2012-02-29 | 江苏宏微科技有限公司 | 半导体功率模块封装外壳结构 |
CN102738099A (zh) * | 2012-06-05 | 2012-10-17 | 嘉兴斯达微电子有限公司 | 一种新型高可靠功率模块 |
CN103779307A (zh) * | 2014-01-25 | 2014-05-07 | 嘉兴斯达半导体股份有限公司 | 一种全免清洗软钎焊功率模块及制备方法 |
CN103872024A (zh) * | 2014-02-18 | 2014-06-18 | 南京银茂微电子制造有限公司 | 一种高频防电磁干扰功率模块 |
CN107635387A (zh) * | 2017-08-16 | 2018-01-26 | 中国电子科技集团公司第十八研究所 | 一种防电磁干扰功率调节电路集成模块及装联方法 |
CN207098939U (zh) * | 2017-09-07 | 2018-03-13 | 中车永济电机有限公司 | 具有简易屏蔽装置的功率模块及简易屏蔽装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113035787A (zh) * | 2019-12-25 | 2021-06-25 | 株洲中车时代半导体有限公司 | 一种逆导型功率半导体模块封装结构及其封装方法 |
CN113035787B (zh) * | 2019-12-25 | 2024-04-19 | 株洲中车时代半导体有限公司 | 一种逆导型功率半导体模块封装结构及其封装方法 |
CN115775793A (zh) * | 2023-02-10 | 2023-03-10 | 淄博美林电子有限公司 | 具备静电屏蔽功能的igbt模块及其制作方法 |
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CN109346457B (zh) | 2021-03-23 |
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Legal Events
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Guo Xinhua Inventor after: Dai Jiaqing Inventor before: Guo Xinhua Inventor before: Yang Guangdeng Inventor before: Dai Jiaqing |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210625 Address after: 318000 no.3101, 1st floor, building 3, No.188, east section of Kaifa Avenue, Taizhou City, Zhejiang Province Patentee after: ZHEJIANG SEMIHARV TECHNOLOGY Co.,Ltd. Address before: 362000 North China Road, Dongcheng, Fengze District, Quanzhou City, Fujian Province, 269 Patentee before: HUAQIAO University |