CN109342915A - A kind of detection method for the LED chip that leaks electricity - Google Patents
A kind of detection method for the LED chip that leaks electricity Download PDFInfo
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- CN109342915A CN109342915A CN201810993754.XA CN201810993754A CN109342915A CN 109342915 A CN109342915 A CN 109342915A CN 201810993754 A CN201810993754 A CN 201810993754A CN 109342915 A CN109342915 A CN 109342915A
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- Prior art keywords
- led chip
- electric leakage
- led
- detection method
- baking tray
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
Abstract
The invention discloses a kind of detection methods of LED chip that leaks electricity, comprising the following steps: the LED chip to size less than 100 microns heats, and heating temperature is not higher than the forming temperature of LED chip Quantum Well；The LED chip after heating is scanned using the method for infrared scan, occurs the place of color in scanning area for electric leakage LED chip.Detection method of the invention can the Micro LED to size less than 100 microns detect, do not need the two poles of the earth of contact chip, electric leakage LED chip verification and measurement ratio is high.
Description
Technical field
The present invention relates to LED technology field more particularly to a kind of detection methods for the LED chip that leaks electricity.
Background technique
For Micro LED as an emerging technology, Micro LED had both inherited the high efficiency of OLED, high brightness, highly reliable
The features such as degree and reaction time are fast, and the characteristic with self-luminous without backlight.
Conventional LED chip detection of electrical leakage mode is detected using point measurement machine, and point measurement machine detection process is that machine will be blue
After film vacuum suction is fixed, vision system carries out full sheet scanning to the LED grain on blue film, obtains the logical bit of LED grain
Set figure (MAP), according to the physical location of LED grain, LED grain to be measured be moved under stylus, make the two poles of the earth of LED grain with
Probe contact, provides test loop.
But since Micro LED chip area is too small, size is generally less than 100 microns, and stylus is difficult to and Micro LED core
The two poles of the earth of piece contact, and are easy to appear test leakage or detection is abnormal.
Summary of the invention
Technical problem to be solved by the present invention lies in, a kind of detection method of LED chip that leaks electricity is provided, it can be small to size
It is detected in 100 microns of Micro LED, is not needed the two poles of the earth of contact chip, electric leakage LED chip verification and measurement ratio is high.
Technical problem to be solved by the present invention lies in, a kind of detection method of LED chip that leaks electricity is provided, it is easy to operate,
It is high-efficient.
In order to solve the above-mentioned technical problems, the present invention provides a kind of detection methods of LED chip that leaks electricity, including following step
It is rapid:
LED chip to size less than 100 microns heats, and heating temperature is not higher than the molding of LED chip Quantum Well
Temperature；
The LED chip after heating is scanned using the method for infrared scan, occurs the place of color in scanning area
For the LED chip that leaks electricity.
As an improvement of the above scheme, the heating temperature of LED chip is 100-650 DEG C.
As an improvement of the above scheme, the heating temperature of LED chip is 300-600 DEG C.
As an improvement of the above scheme, the heating temperature of LED chip is 500-600 DEG C.
As an improvement of the above scheme, the size of LED chip is 30-100 microns.
As an improvement of the above scheme, the size of LED chip is 30-60 microns.
As an improvement of the above scheme, the LED chip after heating is scanned using infrared microscope, infrared light is aobvious
The place of display color is electric leakage LED chip on micro mirror.
As an improvement of the above scheme, the LED chip is flip LED chips or vertical LED chip.
As an improvement of the above scheme, the method that the LED chip to size less than 100 microns is heated includes: by LED
Chip is placed on baking tray, and then the baking tray equipped with LED chip is placed in oven and is heated.
As an improvement of the above scheme, the baking tray is transparent baking tray.
The invention has the following beneficial effects:
The present invention heats LED chip, wherein defective LED chip (electric leakage LED chip) is through being heated at high temperature
Afterwards, electric discharge heat release can be gathered in defect area, then carry out infrared scan to LED chip, since the heat of electric leakage LED chip is poly-
For collection in defect area, LED chip spontaneous spectrum passes through infrared scan, so that it may which LED chip existing defects detected, from
And detect electric leakage LED chip.Specifically, the place meeting display color for the LED chip that leaks electricity in the display interface, normal LED core
The scanning display area of piece is black and white.Detection method of the invention can the Micro LED to size less than 100 microns examine
It surveys, does not need the two poles of the earth of contact chip, accuracy rate is high.
Detailed description of the invention
Fig. 1 is a kind of detection method flow chart for the LED chip that leaks electricity of the present invention；
Fig. 2 is the schematic diagram that electric discharge is gathered in defect area with heat release after LED chip of the present invention heats.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with attached drawing
Step ground detailed description.
It is a kind of detection method flow chart for the LED chip that leaks electricity of the present invention, a kind of leakage provided by the invention referring to Fig. 1, Fig. 1
The detection method of electric LED chip, comprising the following steps:
S101, the LED chip to size less than 100 microns heat, and heating temperature is not higher than LED chip Quantum Well
Forming temperature；
S102, the LED chip after heating is scanned using the method for infrared scan, occurs color in scanning area
Place is electric leakage LED chip.
Since the epitaxial layer of general LED chip is formed using metal oxide chemical vapor deposition method (MOCVD), tool
Body is that portion carries out aerochemistry reaction and surface reaction to the reactants such as trimethyl gallium, trimethyl indium, trimethyl aluminium in the cavity, with
High-temperature gas dissociation reaction generates three races Ga and five race's N atoms, and then generates solid-state nitration gallium on a sapphire substrate.Sapphire
The main component of substrate is Al2O3, Al2O3Reach 14% with the lattice mismatch degree of GaN, so gallium nitride and Sapphire Substrate
Between there are lattice mismatch problem, after the completion of epitaxial growth epitaxial layer can existing defects, defect will lead to LED chip electric leakage.
The present invention heats LED chip, wherein defective LED chip (electric leakage LED chip) is through being heated at high temperature
Afterwards, electric discharge heat release can be gathered in defect area, then carry out infrared scan to LED chip, since the heat of electric leakage LED chip is poly-
For collection in defect area, LED chip spontaneous spectrum passes through infrared scan, so that it may which LED chip existing defects detected, from
And detect electric leakage LED chip.Specifically, the place meeting display color for the LED chip that leaks electricity in the display interface, normal LED core
The scanning display area of piece is black and white.Detection method of the invention can the Micro LED to size less than 100 microns examine
It surveys, does not need the two poles of the earth of contact chip, accuracy rate is high.
Specifically, the heating temperature of LED chip is 100-650 DEG C.When heating temperature is less than 100 DEG C, temperature is too low, aggregation
It is less in the heat of LED chip defect area, after infrared scan, it is not easy to show color on display interface.Due to general
The formation temperature of LED chip Quantum Well is 680 DEG C or so, if the heating temperature of fruit LED chip is greater than 650 DEG C, the amount of being easily destroyed
The structure of sub- trap, influences chip light emitting.Preferably, the heating temperature of LED chip is 300-600 DEG C.
More preferably, the heating temperature of LED chip is 500-600 DEG C.Referring to fig. 2, in this heating temperature range, LED core
The electric discharge heat release of piece is gathered in the tip of defect area, is easier to be detected when scanning by red.
Since large-sized LED chip can carry out detection of electrical leakage using point measurement machine, and the Micro LED of small size is not
Energy.Preferably, the size of LED chip of the present invention is 30-100 microns.When the size of LED chip is less than 30 microns, LED chip
It is easy to be damaged when heated.More preferably, the size of LED chip is 30-60 microns.
Preferably, LED chip of the invention is flip LED chips or vertical LED chip.Due to the LED of both types
Requirement of the chip to point measurement machine is higher, and detection method of the invention is also applied for these two types of LED chips.
Specifically, being scanned using infrared microscope to the LED chip after heating, face is shown on infrared microscope
The place of color is electric leakage LED chip.Further, the present invention sweeps the LED chip after heating using Emmi microscope
It retouches, the place being displayed in red after scanning is electric leakage LED chip.
The present invention can be electric heating, infrared heating, electromagnetic heating etc. to the heating means of LED chip.
Specifically, the method that LED chip of the present invention to size less than 100 microns is heated includes: to put LED chip
On baking tray, then the baking tray equipped with LED chip is placed in oven and is heated.LED chip is placed in oven by the present invention
It is heated, chip can be made to heat more uniform, so that heat is more intensively gathered in defect area, improve electric leakage
The detection accuracy of LED chip.Further, the baking tray is transparent baking tray, convenient for infrared ray directly through baking tray, improves heating
Effect.In addition, LED chip does not need to be shifted after heating, infrared scan, operation letter can be carried out together with transparent baking tray
It is single, it improves efficiency.
The present invention is illustrated with specific embodiment below
Embodiment 1
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101,1000 LED chips having a size of 90 microns are placed on transparent baking tray, baking tray and LED chip is placed on
It is heated in oven, heating temperature is 600 DEG C；
S102, the LED chip after heating is scanned using Emmi microscope, the LED core being displayed in red after scanning
Piece has 100.
Wherein, having 100 in 1000 LED chips is electric leakage LED chip, the verification and measurement ratio of the present embodiment electric leakage LED chip
It is 100%.
Embodiment 2
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101,1000 LED chips having a size of 50 microns are placed on transparent baking tray, baking tray and LED chip is placed on
It is heated in oven, heating temperature is 600 DEG C；
S102, the LED chip after heating is scanned using Emmi microscope, the LED core being displayed in red after scanning
Piece has 100.
Wherein, having 100 in 1000 LED chips is electric leakage LED chip, the verification and measurement ratio of the present embodiment electric leakage LED chip
It is 100%.
Embodiment 3
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101,1000 LED chips having a size of 40 microns are placed on transparent baking tray, baking tray and LED chip is placed on
It is heated in oven, heating temperature is 600 DEG C；
S102, the LED chip after heating is scanned using Emmi microscope, the LED core being displayed in red after scanning
Piece has 100.
Wherein, having 100 in 1000 LED chips is electric leakage LED chip, the verification and measurement ratio of the present embodiment electric leakage LED chip
It is 100%.
Embodiment 4
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101,1000 LED chips having a size of 30 microns are placed on transparent baking tray, baking tray and LED chip is placed on
It is heated in oven, heating temperature is 600 DEG C；
S102, the LED chip after heating is scanned using Emmi microscope, the LED core being displayed in red after scanning
Piece has 100.
Wherein, having 100 in 1000 LED chips is electric leakage LED chip, the verification and measurement ratio of the present embodiment electric leakage LED chip
It is 100%.
Embodiment 5
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101,1000 LED chips having a size of 50 microns are placed on transparent baking tray, baking tray and LED chip is placed on
It is heated in oven, heating temperature is 500 DEG C；
S102, the LED chip after heating is scanned using Emmi microscope, the LED core being displayed in red after scanning
Piece has 100.
Wherein, having 100 in 1000 LED chips is electric leakage LED chip, the verification and measurement ratio of the present embodiment electric leakage LED chip
It is 100%.
Embodiment 6
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101,1000 LED chips having a size of 50 microns are placed on transparent baking tray, baking tray and LED chip is placed on
It is heated in oven, heating temperature is 400 DEG C；
S102, the LED chip after heating is scanned using Emmi microscope, the LED core being displayed in red after scanning
Piece has 100.
Wherein, having 100 in 1000 LED chips is electric leakage LED chip, the verification and measurement ratio of the present embodiment electric leakage LED chip
It is 100%.
Embodiment 7
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101,1000 LED chips having a size of 50 microns are placed on transparent baking tray, baking tray and LED chip is placed on
It is heated in oven, heating temperature is 300 DEG C；
S102, the LED chip after heating is scanned using Emmi microscope, the LED core being displayed in red after scanning
Piece has 98.
Wherein, having 100 in 1000 LED chips is electric leakage LED chip, the verification and measurement ratio of the present embodiment electric leakage LED chip
It is 98%.
Embodiment 8
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101,1000 LED chips having a size of 50 microns are placed on transparent baking tray, baking tray and LED chip is placed on
It is heated in oven, heating temperature is 200 DEG C；
S102, the LED chip after heating is scanned using Emmi microscope, the LED core being displayed in red after scanning
Piece has 93.
Wherein, having 100 in 1000 LED chips is electric leakage LED chip, the verification and measurement ratio of the present embodiment electric leakage LED chip
It is 93%.
Embodiment 9
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101,1000 LED chips having a size of 50 microns are placed on transparent baking tray, baking tray and LED chip is placed on
It is heated in oven, heating temperature is 100 DEG C；
S102, the LED chip after heating is scanned using Emmi microscope, the LED core being displayed in red after scanning
Piece has 100.
Wherein, having 100 in 1000 LED chips is electric leakage LED chip, the verification and measurement ratio of the present embodiment electric leakage LED chip
It is 90%.
Comparison implements 1
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101,1000 LED chips having a size of 50 microns are placed on transparent baking tray, baking tray and LED chip is placed on
It is heated in oven, heating temperature is 80 DEG C；
S102, the LED chip after heating is scanned using Emmi microscope, the LED core being displayed in red after scanning
Piece has 60.
Wherein, having 100 in 1000 LED chips is electric leakage LED chip, the verification and measurement ratio of the present embodiment electric leakage LED chip
It is 60%.
Originally being implemented with 100 LED chips cannot be scanned, verification and measurement ratio 60%.
Comparison implements 2
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101,1000 LED chips having a size of 50 microns are placed on transparent baking tray, baking tray and LED chip is placed on
It is heated in oven, heating temperature is 700 DEG C；
S102, the LED chip after heating is scanned using Emmi microscope, the LED core being displayed in red after scanning
Piece has 200.
Wherein, there are 100 in 1000 LED chips for electric leakage LED chip, the present embodiment there are 100 LED chips because high
Temperature is heated and is leaked electricity.
Comparison implements 3
A kind of detection method for the LED chip that leaks electricity, comprising the following steps:
S101, it 1000 is placed on point measurement machine having a size of 50 microns of LED chip carries out detection of electrical leakage, point measurement machine is shown
There was only the electric leakage of 10 LED chips out；
Wherein, having 100 in 1000 LED chips is electric leakage LED chip, the verification and measurement ratio of the present embodiment electric leakage LED chip
It is 10%.
Above disclosed is only a preferred embodiment of the present invention, cannot limit the power of the present invention with this certainly
Sharp range, therefore equivalent changes made in accordance with the claims of the present invention, are still within the scope of the present invention.
Claims (10)
1. a kind of detection method for the LED chip that leaks electricity, which comprises the following steps:
LED chip to size less than 100 microns heats, and heating temperature is not higher than the forming temperature of LED chip Quantum Well；
The LED chip after heating is scanned using the method for infrared scan, occurs the place of color in scanning area for leakage
Electric LED chip.
2. the detection method of electric leakage LED chip as described in claim 1, which is characterized in that the heating temperature of LED chip is
100-650℃。
3. the detection method of electric leakage LED chip as claimed in claim 2, which is characterized in that the heating temperature of LED chip is
300-600℃。
4. the detection method of electric leakage LED chip as claimed in claim 3, which is characterized in that the heating temperature of LED chip is
500-600℃。
5. the detection method of electric leakage LED chip as described in claim 1, which is characterized in that the size of LED chip is 30-100
Micron.
6. the detection method of electric leakage LED chip as claimed in claim 5, which is characterized in that the size of LED chip is 30-60
Micron.
7. the detection method of electric leakage LED chip as described in claim 1, which is characterized in that using infrared microscope to adding
LED chip after heat is scanned, and the place of display color is electric leakage LED chip on infrared microscope.
8. the detection method of electric leakage LED chip as described in claim 1, which is characterized in that the LED chip is flip LED
Chip or vertical LED chip.
9. the detection method of electric leakage LED chip as described in claim 1, which is characterized in that size less than 100 microns
The method that LED chip is heated includes: that LED chip is placed on baking tray, and the baking tray equipped with LED chip is then placed on oven
Inside heated.
10. the detection method of electric leakage LED chip as claimed in claim 9, which is characterized in that the baking tray is transparent baking tray.
Priority Applications (1)
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| CN201810993754.XA CN109342915A (en) | 2018-08-29 | 2018-08-29 | A kind of detection method for the LED chip that leaks electricity |
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| CN201810993754.XA CN109342915A (en) | 2018-08-29 | 2018-08-29 | A kind of detection method for the LED chip that leaks electricity |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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Application publication date: 20190215 |