CN107727663A - It is a kind of that the method for carrying out failure detection is characterized to LED chip - Google Patents
It is a kind of that the method for carrying out failure detection is characterized to LED chip Download PDFInfo
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Abstract
The method for carrying out failure detection is characterized to LED chip the invention discloses a kind of, comprised the following steps：The failure conditions not broken a seal in LED chip through epoxy resin lenses observation detection；When analyzing LED chip surface and having LED chip crackle, burn corrosion condition, based on SEM SEM scanning LED chips crackle, corrosion condition is burnt, and based on failure site output shape, size, size, structure, colouring information；The pollutant component of LED chip surface failure fractions is analyzed based on SIMS analysis SIMS, obtains composition possessed by the pollutant and ion residues thing adhered to during chip manufacturing and equipment；Fractograph analysis is carried out to LED chip.By the embodiment of the present invention, for before Kaifeng, behind Kaifeng and section integral analysis, LED chip failure can be directed to and draw a result data analyzed comprehensively.
Description
Technical field
The present invention relates to LED to test and analyze technical field, and in particular to a kind of characterized to LED chip carries out failure detection
Method.
Background technology
In recent years, LED receives much concern in the application of solid state lighting and display field, and comparing, other are artificial
Light source, LED have less energy consumption, long lifespan, small volume, it is green, colour purity is high many advantages, such as.With carrying for light efficiency
Rise, LED is by broader applications to solid state lighting, display rear-projection etc..Chip is the raw material of LED most criticals, its quality
Quality, directly determine LED performance.
Photoelectric properties parameter detecting is only made in the domestic detection of LED chip at present, has no material tests.And material and surface analysis
Technology occupies considerable status in LED industry, and this detection is widely used in the links in production process, from new
Monitoring in material, new process development, technical process is until failure and dissection and analysis, and existing LED encapsulation factories are due to lacking core
The integrity measure of piece failure detection, whole LED chip failure is caused to lack integrity detection process.
The content of the invention
The invention provides it is a kind of to LED chip characterize carry out failure detection method, for before Kaifeng, Kaifeng after and
Section integral analysis, LED chip failure can be directed to and draw a result data analyzed comprehensively.
The method for carrying out failure detection is characterized to LED chip the invention provides a kind of, comprised the following steps：
The failure conditions not broken a seal in LED chip through epoxy resin lenses observation detection, the failure conditions include core
Piece crackle crack, chip pollutant, electrostatic damage；
After the LED chip that do not break a seal completes failure conditions detection, the LED chip that do not break a seal is broken a seal, and detect core
Piece surface defect, bonding situation；
The split LED chip surface being honored as a queen passes through the composition of microscopy analysis chip surface microscopic, structure, state；
When analyzing LED chip surface and having LED chip crackle, burn corrosion condition, based on SEM SEM
Scanning LED chip crackle, corrosion condition is burnt, and based on failure site output shape, size, size, structure, colouring information；
The pollutant component of LED chip surface failure fractions is analyzed based on SIMS analysis SIMS,
Obtain composition possessed by the pollutant and ion residues thing adhered to during chip manufacturing and equipment；
Fractograph analysis is carried out to LED chip, in lead and chip weld cavity, chip substrate bond crack, chip
Impurity diffusion and the analysis of internal injury crackle, are specifically included：
LED chip is placed in cast model, fixed LED chip with mould material；
LED component is ground to position to be analyzed using Ginding process；
Analysis position is treated using electron microprobe, electron microscope, metallographic microscope analysis means to lead and chip
Impurity diffusion is analyzed in weld, chip substrate bonding part and chip；
Residuals after grinding are added in the impeller with deionized water and carry out rotary-cleaning；
Using purified water rotation immersion 6 to 8 hours, and carry out centrifugation and obtain the residuals after centrifugation；
The residuals after centrifugation are being dried based on drying technology, and residuals divided based on SIMS
Analysis.
It is described based on SEM SEM scannings LED chip crackle, burn corrosion condition and include：
The convex-concave that LED chip surface is smiled is transformed to by electric signal by SEM, then converts the electrical signal to figure shows letter
Number.
Composition possessed by the pollutant and ion residues thing for obtaining chip manufacturing and adhering to during equipping includes：
Chip and bonding pad material pollution, mutual molten, counterdiffusion, novel substance generation, external contaminant.
LED component is ground to position to be analyzed by the use Ginding process to be included：
After LED chip pours into grinding, grinding is cut, be ground or ground, afterwards by polishing, burn into
Staining procedure, position exposure is analysed to treat failure analysis.
It is described by LED chip be placed on cast model in, with mould material by LED chip fix including：
Cast LED chip makes LED chip stable by retained part in grinding and grinding to make retained part.
In the present invention, it is possible to achieve the integrity analysis characterized to LED chip, the never characteristic features under the process of Kaifeng
Analyzed, the failure detection being then transferred to again under opening status, internal structure is carried out for each failure state of LED chip
Analyze and draw corresponding failure analysis result.Using fractograph analysis, targetedly split for each internal injury in LED chip
Line, impurity etc. realize failure analysis, and carry out centrifugal treating to residue, retain the element object that analysis is available for for SIMS, real
The comprehensive of whole failure detection is showed, the comprehensive analysis for realizing LED chip from inside to outside.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is that the method flow diagram for carrying out failure detection is characterized to LED chip in the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained all other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Fig. 1, which is shown in the embodiment of the present invention, characterizes the method flow diagram for carrying out failure detection, specific bag to LED chip
Include：
S101, for chip surface morphology detection and constituent analysis；
First to LED chip visual examination, it includes internal check, saturating using micro- sem observation under the premise of nondestructive
The inner case of funerary objects part.Can be directly under the premise of non-destructive through epoxy resin lenses observation chip for LED component
On failure conditions, including die crack crack, chip pollutant, electrostatic damage etc..The benefit of the method is exactly to greatest extent
Ground ensures that LED component detects internal failure mechanism under original state.But its accuracy detects far below Kaifeng, it is impossible to complete
The whole LED component of detection failure state.
, it is necessary to carry out Kaifeng processing, LED chip to LED component after the LED chip that do not break a seal completes failure conditions detection
Detection chip surface defect, bonding situation first after Kaifeng.In analysis LED chip surface material composition, it is therefore an objective to which detection is dirty
Situation be present in dye thing.To exposed chip surface by the composition of microscopy analysis surface microscopic, structure, state, it is necessary to observe；Core
Sheet material, the misuse of structure, defect, and chip have flawless, burn corrosion condition；It will observe the shape of failure site in detail
The information such as shape, size, size, structure, color.
When analyzing LED chip surface and having LED chip crackle, LED core leafing is scanned based on SEM SEM
Line, corrosion condition is burnt, be using scanning electron microscope sem method that chip surface is micro- for chip surface measuring shape common method
Small convex-concave is transformed to electric signal, then signal is zoomed into figure shows record.Such as LED electrostatic breakdowns can cause chip surface
Breakdown is produced, visual inspection sometimes is difficult to find, may also be used for detecting using this equipment in addition to ultramicroscopic observation.ESEM
SEM can observe corrosion default.Can also analysis chip surface relief state, epitaxial surface flatness, defect and the shape corroded
Depth.Heterojunction structure and epitaxial layer interface position, thickness, uniformity.
The purpose of pollutant component analysis is that failure site composition transfer is analyzed, and detection chip is manufactured and assembled
The pollutant and ion residues thing adhered in journey, including chip and bonding pad material pollution, mutually molten, counterdiffusion, novel substance produce, are outer
Carry out pollutant etc., its be mainly based upon pollutions of the SIMS analysis SIMS to LED chip surface failure fractions into
Analyzed, obtain composition possessed by the pollutant and ion residues thing adhered to during chip manufacturing and equipment.
S102, for LED chip carry out fractograph analysis；
LED fractograph analysis includes bonding impurity diffusion in crack, chip to lead and chip weld cavity, chip substrate
And the analysis of internal injury crackle.Purpose is exposed device internal feature, and the chip internal that further checking signature detects is gone
Defect.Preparation method is needed LED pouring into grinding, and grinding is cut, is ground or ground, afterwards by polishing, corruption
The steps such as erosion, dyeing, by the exposure of LED chip inner case to treat failure analysis.
The characteristics of for LED small sizes, need to pour into a mould LED before preparing section to make retained part, in order to grind
Cut and make gripping element stable when grinding.General preparation method is placed on device in appropriate model, with mould material by its
It is fixed on best orientation., it is necessary to control the temperature entirely poured into a mould when mould material, general control temperature at 80 ° extremely
Between 100 °.The characteristic that the backing material of LED component is hard and crisp, golden and solder ductility is good, using Ginding process by LED devices
Part is ground to position to be analyzed.Especially it is careful not to introduce new damage during grinding.Electron microprobe, electronics are utilized after grinding
The analysis means such as microscope, metallographic microscope expand impurity in lead and chip weld, chip substrate bonding part and chip
Dissipate and analyzed.
And the residuals after grinding are added in the impeller with deionized water and carry out rotary-cleaning；
Using purified water rotation immersion 6 to 8 hours, and carry out centrifugation and obtain the residuals after centrifugation；Will be from based on drying technology
Residuals after the heart are dried, and carry out elementary analysis to residuals based on X-ray energy spectrometer.Here centrifugal process
Some non-analytical elements can be filtered out, retains some and supplies analytical element, based on impeller and after realizing centrifugation, each material point
Layer enters row element relative to that under non-Centrifugal dispersion state, can be easier to realize using X-ray energy spectrometer to residuals
Analysis.
S103, constituent analysis and fractograph analysis result exported with LED failure examining report.
For the failure conditions analyzed in above procedure, complete examining report is formed, and output retains automatically, with
This reaches the integrity detection process that whole LED chip characterizes, and from outside to inside and realizes the analysis of overall composition, has ensured whole
Failure analysis it is comprehensive.
In the automobile LED chip such as failure, first to automobile LED chip visual examination, it includes internal check,
The inner case of micro- sem observation transparent devices is utilized under the premise of nondestructive.Can be directly non-destructive for LED component
Under the premise of through the failure conditions on epoxy resin lenses observation chip, such as including die crack crack, chip pollutant, quiet
Electric injury etc., then forms wrong reasons.
Carry out Kaifeng processing to automobile LED device, detection chip surface defect, bonding feelings first after LED chip Kaifeng
Condition.In analysis LED chip surface material composition, it is therefore an objective to detect pollutant and situation be present.Mirror is passed through to exposed chip surface
The composition for analyzing surface microscopic, structure, state are examined, it is necessary to observe；Chip material, the misuse of structure, defect, and chip whether there is
Crackle, burn corrosion condition；It will observe the information such as the shape of failure site, size, size, structure, color in detail.Based on mirror
Inspection analyzing and processing forms wrong reasons.
When analyzing automobile LED chip surface and having LED chip crackle, LED core is scanned based on SEM SEM
Piece crackle, corrosion condition is burnt, be to utilize scanning electron microscope sem method by chip list for chip surface measuring shape common method
The small convex-concave in face is transformed to electric signal, then signal is zoomed into figure shows record.Corruption can observe using scanning electron microscope sem
Lose defect.Can also analysis chip surface relief state, epitaxial surface flatness, defect and the shape depth corroded.Heterojunction structure
With epitaxial layer interface position, thickness, uniformity.Automobile LED chip failure material is formed based on SEM shaping results.
The purpose of pollutant component analysis is that failure site composition transfer is analyzed, and detection chip is manufactured and assembled
The pollutant and ion residues thing adhered in journey, including chip and bonding pad material pollution, mutually molten, counterdiffusion, novel substance produce, are outer
Carry out pollutant etc., its be mainly based upon pollutions of the SIMS analysis SIMS to LED chip surface failure fractions into
Analyzed, obtain composition possessed by the pollutant and ion residues thing adhered to during chip manufacturing and equipment.Formed
The corresponding automobile LED chip failure material of pollutant component analysis.
LED fractograph analysis is carried out to automobile LED chip, specifically included to lead and chip weld cavity, chip substrate
Bond impurity diffusion and the analysis of internal injury crackle in crack, chip.Purpose is exposed device internal feature, further checking
The chip internal detected of signing goes defect.Preparation method needs LED pouring into grinding, to grinding cut, be ground or
Person grinds, afterwards by steps such as polishing, burn into dyeing, by the exposure of LED chip inner case to treat failure analysis.
The characteristics of for LED small sizes, need to pour into a mould LED before preparing section to make retained part, in order to grind
Cut and make gripping element stable when grinding.General preparation method is placed on device in appropriate model, with mould material by its
It is fixed on best orientation., it is necessary to control the temperature entirely poured into a mould when mould material, general control temperature at 80 ° extremely
Between 100 °.The characteristic that the backing material of LED component is hard and crisp, golden and solder ductility is good, using Ginding process by LED devices
Part is ground to position to be analyzed.Especially it is careful not to introduce new damage during grinding.Electron microprobe, electronics are utilized after grinding
The analysis means such as microscope, metallographic microscope expand impurity in lead and chip weld, chip substrate bonding part and chip
Dissipate and analyzed.
Ultimately form lead and chip weld cavity, chip substrate bonding crack above, in chip impurity diffusion and
The analysis report of internal injury crackle.
After automobile LED chip is ground, residuals are left, it is necessary to handle residuals, analysis residual
The correlation material analysis of material, the residuals after grinding are added in the impeller with deionized water and carried out
Rotary-cleaning；Using purified water rotation immersion 6 to 8 hours, and carry out centrifugation and obtain the residuals after centrifugation；Based on drying
Technology is dried the residuals after centrifugation, and residuals are analyzed based on X-ray energy spectrometer.It is mixed based on rotation
Clutch and after realizing centrifugation, each material layering or relative under non-Centrifugal dispersion state, using X-ray energy spectrometer to automobile
Each element in LED chip in residuals is analyzed, and analyzes element proportion and composition.
For the failure conditions analyzed in above procedure, complete examining report is formed, and output retains automatically, with
This reaches the integrity detection process that whole automobile LED chip characterizes, and from outside to inside and realizes the analysis of overall composition, ensures
Entirely failure analysis is comprehensive.
To sum up, it is possible to achieve the integrity analysis characterized to LED chip, the never characteristic features under the process of Kaifeng are divided
Analysis, the failure detection being then transferred to again under opening status, the analysis of internal structure is carried out simultaneously for each failure state of LED chip
Draw corresponding failure analysis result.Using fractograph analysis, targetedly for each internal injury crackle, impurity in LED chip
Etc. realizing failure analysis, and centrifugal treating is carried out to residue, retain the element object that analysis is available for for SIMS, realize whole
Comprehensive, the comprehensive analysis for realizing LED chip from inside to outside of failure detection.
One of ordinary skill in the art will appreciate that all or part of step in the various methods of above-described embodiment is can
To instruct the hardware of correlation to complete by program, the program can be stored in computer-readable recording medium, and storage is situated between
Matter can include：Read-only storage (ROM, Read Only Memory), random access memory (RAM, Random Access
Memory), disk or CD etc..
The method that progress failure detection is characterized to LED chip provided above the embodiment of the present invention has carried out detailed Jie
Continue, specific case used herein is set forth to the principle and embodiment of the present invention, and the explanation of above example is only
It is the method and its core concept for being used to help understand the present invention；Meanwhile for those of ordinary skill in the art, according to this hair
Bright thought, there will be changes in specific embodiments and applications, in summary, this specification content should not manage
Solve as limitation of the present invention.
Claims (5)
1. a kind of characterize the method for carrying out failure detection to LED chip, it is characterised in that comprises the following steps：
The failure conditions not broken a seal in LED chip through epoxy resin lenses observation detection, the failure conditions are split including chip
Line crack, chip pollutant, electrostatic damage；
After the LED chip that do not break a seal completes failure conditions detection, the LED chip that do not break a seal is broken a seal, and detection chip table
Planar defect, bonding situation；
The split LED chip surface being honored as a queen passes through the composition of microscopy analysis chip surface microscopic, structure, state；
When analyzing LED chip surface and having LED chip crackle, burn corrosion condition, scanned based on SEM SEM
LED chip crackle, corrosion condition is burnt, and based on failure site output shape, size, size, structure, colouring information；
The pollutant component of LED chip surface failure fractions is analyzed based on SIMS analysis SIMS, obtained
Composition possessed by the pollutant and ion residues thing adhered to during chip manufacturing and equipment；
Fractograph analysis is carried out to LED chip, to impurity in lead and chip weld cavity, chip substrate bond crack, chip
Diffusion and the analysis of internal injury crackle, are specifically included：
LED chip is placed in cast model, fixed LED chip with mould material；
LED component is ground to position to be analyzed using Ginding process；
Analysis position is treated to weld lead and chip using electron microprobe, electron microscope, metallographic microscope analysis means
Impurity diffusion is analyzed in place, chip substrate bonding part and chip；
Residuals after grinding are added in the impeller with deionized water and carry out rotary-cleaning；
Using purified water rotation immersion 6 to 8 hours, and carry out centrifugation and obtain the residuals after centrifugation；
The residuals after centrifugation are being dried based on drying technology, and residuals carried out based on X-ray energy spectrometer
Analysis.
2. the method for carrying out failure detection is characterized to LED chip as claimed in claim 1, it is characterised in that described to be based on sweeping
Electron microscope SEM scannings LED chip crackle is retouched, corrosion condition is burnt and includes：
The convex-concave that LED chip surface is smiled is transformed to by electric signal by SEM, then converts the electrical signal to graphical display signal.
3. the method for carrying out failure detection is characterized to LED chip as claimed in claim 1, it is characterised in that the acquisition core
Composition possessed by the pollutant and ion residues thing adhered to during piece manufacture and equipment includes：
Chip and bonding pad material pollution, mutual molten, counterdiffusion, novel substance generation, external contaminant.
4. the method for carrying out failure detection is characterized to LED chip as claimed in claim 1, it is characterised in that the use is ground
LED component is ground to position to be analyzed by mill method to be included：
After LED chip pours into grinding, grinding is cut, be ground or ground, afterwards by polishing, burn into dyeing
Step, position exposure is analysed to treat failure analysis.
5. the method for carrying out failure detection is characterized to LED chip as claimed in claim 1, it is characterised in that described by LED core
Piece be placed on cast model in, with mould material by LED chip fix including：
Cast LED chip makes LED chip stable by retained part in grinding and grinding to make retained part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711141916.9A CN107727663A (en) | 2017-11-17 | 2017-11-17 | It is a kind of that the method for carrying out failure detection is characterized to LED chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711141916.9A CN107727663A (en) | 2017-11-17 | 2017-11-17 | It is a kind of that the method for carrying out failure detection is characterized to LED chip |
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| CN107727663A true CN107727663A (en) | 2018-02-23 |
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| CN201711141916.9A Pending CN107727663A (en) | 2017-11-17 | 2017-11-17 | It is a kind of that the method for carrying out failure detection is characterized to LED chip |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108508053A (en) * | 2018-04-26 | 2018-09-07 | 武汉新芯集成电路制造有限公司 | A kind of detection method of the atomic physical imperfection of systematicness |
| CN108535628A (en) * | 2018-03-20 | 2018-09-14 | 力特半导体（无锡）有限公司 | A kind of power semiconductor chip failure positioning method avoiding burn |
| CN109211928A (en) * | 2018-08-31 | 2019-01-15 | 胜科纳米（苏州）有限公司 | The detection method of chip surface film layer defect |
| CN109342915A (en) * | 2018-08-29 | 2019-02-15 | 佛山市国星半导体技术有限公司 | A kind of detection method for the LED chip that leaks electricity |
| CN110793909A (en) * | 2019-10-16 | 2020-02-14 | 安徽芯瑞达科技股份有限公司 | Method for accelerating resin crack test by LED |
| CN110931350A (en) * | 2019-11-30 | 2020-03-27 | 闳康技术检测(上海)有限公司 | Method for cleaning metal residues and stains on chip surface |
| CN112179919A (en) * | 2020-09-27 | 2021-01-05 | 西安立芯光电科技有限公司 | Semiconductor laser chip failure analysis method |
| CN113495122A (en) * | 2020-04-07 | 2021-10-12 | 海太半导体（无锡）有限公司 | Open circuit analysis method for flip product |
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| CN114486926A (en) * | 2021-12-30 | 2022-05-13 | 深圳瑞波光电子有限公司 | Semiconductor laser chip failure analysis method |
| CN116572087A (en) * | 2023-07-12 | 2023-08-11 | 日月新检测科技(苏州)有限公司 | Method for grinding semiconductor packaging product |
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| CN108535628A (en) * | 2018-03-20 | 2018-09-14 | 力特半导体（无锡）有限公司 | A kind of power semiconductor chip failure positioning method avoiding burn |
| CN108508053B (en) * | 2018-04-26 | 2021-01-12 | 武汉新芯集成电路制造有限公司 | Method for detecting systematic infinitesimal physical defects |
| CN108508053A (en) * | 2018-04-26 | 2018-09-07 | 武汉新芯集成电路制造有限公司 | A kind of detection method of the atomic physical imperfection of systematicness |
| CN109342915A (en) * | 2018-08-29 | 2019-02-15 | 佛山市国星半导体技术有限公司 | A kind of detection method for the LED chip that leaks electricity |
| CN109211928A (en) * | 2018-08-31 | 2019-01-15 | 胜科纳米（苏州）有限公司 | The detection method of chip surface film layer defect |
| CN110793909B (en) * | 2019-10-16 | 2022-04-12 | 安徽芯瑞达科技股份有限公司 | Method for accelerating resin crack test by LED |
| CN110793909A (en) * | 2019-10-16 | 2020-02-14 | 安徽芯瑞达科技股份有限公司 | Method for accelerating resin crack test by LED |
| CN110931350A (en) * | 2019-11-30 | 2020-03-27 | 闳康技术检测(上海)有限公司 | Method for cleaning metal residues and stains on chip surface |
| CN110931350B (en) * | 2019-11-30 | 2024-05-14 | 闳康技术检测(上海)有限公司 | Method for cleaning metal residue and contamination on chip surface |
| CN113495122A (en) * | 2020-04-07 | 2021-10-12 | 海太半导体（无锡）有限公司 | Open circuit analysis method for flip product |
| CN112179919B (en) * | 2020-09-27 | 2023-11-10 | 西安立芯光电科技有限公司 | Failure analysis method for semiconductor laser chip |
| CN112179919A (en) * | 2020-09-27 | 2021-01-05 | 西安立芯光电科技有限公司 | Semiconductor laser chip failure analysis method |
| CN114252402A (en) * | 2021-12-21 | 2022-03-29 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Analysis processing method for discoloration of solder mask of printed circuit board |
| CN114252402B (en) * | 2021-12-21 | 2024-01-26 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Analysis processing method for discoloration of solder mask of printed circuit board |
| CN114486926A (en) * | 2021-12-30 | 2022-05-13 | 深圳瑞波光电子有限公司 | Semiconductor laser chip failure analysis method |
| CN114486926B (en) * | 2021-12-30 | 2024-03-26 | 深圳瑞波光电子有限公司 | Failure analysis method for semiconductor laser chip |
| CN116572087A (en) * | 2023-07-12 | 2023-08-11 | 日月新检测科技(苏州)有限公司 | Method for grinding semiconductor packaging product |
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