CN109211928A - The detection method of chip surface film layer defect - Google Patents
The detection method of chip surface film layer defect Download PDFInfo
- Publication number
- CN109211928A CN109211928A CN201811011997.5A CN201811011997A CN109211928A CN 109211928 A CN109211928 A CN 109211928A CN 201811011997 A CN201811011997 A CN 201811011997A CN 109211928 A CN109211928 A CN 109211928A
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- sample
- defect
- fluorescent
- film layer
- surface film
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/91—Investigating the presence of flaws or contamination using penetration of dyes, e.g. fluorescent ink
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6456—Spatial resolved fluorescence measurements; Imaging
- G01N21/6458—Fluorescence microscopy
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6456—Spatial resolved fluorescence measurements; Imaging
- G01N2021/646—Detecting fluorescent inhomogeneities at a position, e.g. for detecting defects
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- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The invention discloses a kind of detection methods of chip surface film layer defect, comprising: provides sample, and pre-processes to sample；Bleeding agent is prepared according to sample characteristic, and configured bleeding agent is placed in unglazed place and is saved, the bleeding agent is the fluorescent solutions or Fluorescent gas of Nano grade；The sample is placed in bleeding agent, is fully infiltrated into fluorescent molecule in the defect of sample；It takes out sample, cleaning and dries；Using laser or ultraviolet light sample, the fluorescent molecule in defect is made to generate fluorescence；Observing samples simultaneously obtain the defect on sample more than nanoscale.The mode that the present invention is permeated using fluorescent solutions or Fluorescent gas, detects the defect of electronic apparatus package surface.This method of detection is to use the fluorescent material of Nano grade as bleeding agent, it is fully infiltrated into fluorescent molecule into defect, so as to clearly detect the defect of nanoscale and dimensions above in chip surface film layer, technical guarantee is provided for detection nanoscale defect.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular to a kind of detection method of chip surface film layer defect.
Background technique
In chip manufacturing process, in order to improve the electric property and reliability of chip, generallyd use in chip surface
SiO2, SiNxDeng as superficial film.Superficial film is played to be completely cut off with extraneous air, steam, protects chip from corroding and touching
Wound, the effect scratched.And production technology frequently can lead to the defects of chip surface film layer generates pin hole or micro-crack, once surface
Film layer existing defects, then moisture and corrosive ion can invade the metalization layer of chip, lead to chip failure.Therefore how fixed
The defects of position superficial film is industry focus of attention.At present to the localization method of chip surface film layer defect mainly with optics
Based on the methods of microscope/scanning electron microscope/colouring penetrant inspection/acid corrosion, but the equal Shortcomings of these methods,
Positioning in particular for nanoscale defect is more difficult.
Summary of the invention
The present invention provides a kind of detection method of chip surface film layer defect, existing in the prior art to nanometer to solve
The problem of grade defect location and detection difficult.
In order to solve the above technical problems, the present invention provides a kind of detection method of chip surface film layer defect, comprising: provide
Sample, and sample is pre-processed；Bleeding agent is prepared according to sample characteristic, and configured bleeding agent is placed in unglazed place and is protected
It deposits, the bleeding agent is the fluorescent solutions or Fluorescent gas of Nano grade；The sample is placed in bleeding agent, fluorescence point is made
Son is fully infiltrated into the defect of sample；It takes out sample, cleaning and dries；Using laser or ultraviolet light sample, make defect
In fluorescent molecule generate fluorescence；Observing samples simultaneously obtain the defect on sample more than nanoscale.
Preferably, it includes fluorescein, rhodamine B, rhodamine 6G, three that the fluorescent solutions, which include: the fluorescent solutions,
(8-hydroxyquinoline) aluminium (Alq3)；The Fluorescent gas includes benzene.
Preferably, the concentration of the bleeding agent is 1~1000ppm.
Preferably, the time of penetration of sample is 0.01~50 hour.
Preferably, being observed using fluorescence microscope or Laser Scanning Confocal Microscope sample surfaces and section, track
The fluorescent molecule in sample defects is entered, Fluorescent micrograph is obtained.
Preferably, judging the size of defect, position and form by the Fluorescent micrograph.
Preferably, the sample pretreatment step includes: to see using organic solvent wipe samples, and with optical microscopy
It examines, it is ensured that sample is without dirt.
Compared with prior art, the invention proposes the mode for using fluorescent solutions or Fluorescent gas to permeate, detection chips
The defect on superficial film surface.This method of detection is to use the fluorescent material of Nano grade as bleeding agent, and sample is impregnated
In fluorescent penetrant, fluorescent molecule is fully infiltrated into defect.After cleaning, the fluorescence being retained in defect divides
Son generates fluorescence under the irradiation of ultraviolet light/laser.By fluorescence microscope or Laser Scanning Confocal Microscope to sample surfaces and
Section is observed, and size, position and the form of defect are judged by the Fluorescent micrograph shown.It through the invention can be with
The defect of nanoscale and dimensions above in chip surface film layer clearly is detected, technology is provided for detection nanoscale defect and protects
Barrier.Also, the present invention for chip surface film layer area there is no limit, large-area chips can adapt to, and will not break
Metal layer or circuit below bad superficial film avoid causing chip irreversible destruction.
Detailed description of the invention
Fig. 1 is the detection method flow chart of chip surface film layer defect of the invention.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.It should be noted that attached drawing of the present invention is all made of simplified form and uses non-essence
Quasi- ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
As shown in Figure 1, the present invention provides a kind of detection method of chip surface film layer defect, comprising:
Sample is provided, and sample is pre-processed, to carry out subsequent operation.Sample is specifically wiped using organic solvent
Product make its clean surface, and utilize optical microphotograph sem observation, it is ensured that sample is without dirt.
Then, fluorescent material is prepared according to sample characteristic.Specifically, the sample characteristic refers to the encapsulating material of sample
For example hydrophilic size of property, the trend of the size of possible defect and possible defect.For the big encapsulation of hydrophily
Material, the fluorescent material molecule of optional good water solubility.For nanoscale defect, optional fluorescent molecule as small as possible.If
Internal flaw moves towards complicated, and Fluorescent gas molecule can be selected.
The fluorescent material uses fluorescent solutions or Fluorescent gas with good osmotic effect, certainly, after the completion of preparation
Fluorescent material need to be placed in unglazed place and save, in order to avoid using when lose fluorescent effect.In the present embodiment, the fluorescent solutions packet
Fluorescein, rhodamine B, rhodamine 6G, three (8-hydroxyquinoline) aluminium (Alq3) etc. are included, concentration range is 1~1000ppm.It is described
Fluorescent gas includes benzene etc., and concentration range is 1~1000ppm.
Then, the sample is placed in the fluorescent material, and continues placement 0.01-50 hour, it is ensured that fluorescence point
Son is fully infiltrated into the defect of sample.Specifically, when sample is located in fluorescent solutions, due to the wetting of liquid, make fluorescence
Molecule and the capillary of sample defects interact, so that after a certain period of time, fluorescent molecule can be fully infiltrated into the defect of sample
It is interior.When sample is located in Fluorescent gas environment, Fluorescent gas is kept in motion always, and then can be mutual with the defect of sample
Effect, after certain time, fluorescent molecule is fully infiltrated into the defect of sample.
After in the fully penetrated defect to sample of fluorescent molecule, sample is taken out, and (solvent is usually using solvent
Deionized water or methanol) elution, and dry, the sample after being permeated.
Then, observing samples and the defect on sample more than nanoscale is obtained.Have and selects fluorescence aobvious according to sample characteristic
Micro mirror or Laser Scanning Confocal Microscope, by surface and cross-section observation, tracking enters the fluorescent molecule in sample defects, obtains glimmering
Light displaing micro picture, judges size, position and the form of defect by the Fluorescent micrograph, so outside localizing sample or
The defect being connected to outside.
It should be noted that while observing samples perhaps before using ultraviolet light or laser irradiating sample, make
The fluorescent molecule being retained in defect generates fluorescence, just can ensure that subsequent use fluorescence microscope or Laser Scanning Confocal Microscope in this way
When observing sample, the fluorescent molecule in defect can be detected, and then obtain the information of defect.
In conclusion the invention proposes the mode for using fluorescent solutions or Fluorescent gas to permeate, detection chip skin covering of the surface
The defect of layer surface.This method of detection is to use the fluorescent material of Nano grade as bleeding agent, and sample is immersed in fluorescence
In bleeding agent, fluorescent molecule is fully infiltrated into defect.After cleaning, the fluorescent molecule in defect is retained in purple
Under the irradiation of outer light/laser, fluorescence is generated.By fluorescence microscope or Laser Scanning Confocal Microscope to sample surfaces and section into
Row observation, size, position and the form of defect are judged by the Fluorescent micrograph shown.It can clearly visit through the invention
The defect of nanoscale and dimensions above in chip surface film material is measured, provides technical guarantee for detection nanoscale defect.
Also, the present invention for chip surface film layer area there is no limit, large-area chips can adapt to, and table will not be destroyed
Metal layer or circuit below face mask layer avoid causing chip irreversible destruction.
Obviously, those skilled in the art can carry out various modification and variations without departing from spirit of the invention to invention
And range.If in this way, these modifications and changes of the present invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the invention is also intended to include including these modification and variations.
Claims (6)
1. a kind of detection method of chip surface film layer defect characterized by comprising
Sample is provided, and sample is pre-processed；
Bleeding agent is prepared according to sample characteristic, and configured bleeding agent is placed in unglazed place and is saved, the bleeding agent is nanometer
The fluorescent solutions or Fluorescent gas of rank；
The sample is placed in bleeding agent, is fully infiltrated into fluorescent molecule in the defect of sample；
It takes out sample, cleaning and dries；
Using laser or ultraviolet light sample, the fluorescent molecule in defect is made to generate fluorescence；
Observing samples simultaneously obtain the defect on sample more than nanoscale.
2. the detection method of chip surface film layer defect as described in claim 1, which is characterized in that the fluorescent solutions include
Fluorescein, rhodamine B, rhodamine 6G, three (8-hydroxyquinolines) and aluminium (Alq3)；The Fluorescent gas includes benzene.
3. the detection method of chip surface film layer defect as described in claim 1, which is characterized in that the concentration of the bleeding agent
For 1~1000ppm.
4. the detection method of chip surface film layer defect as described in claim 1, which is characterized in that the time of penetration of sample is
0.01~50 hour.
5. the detection method of chip surface film layer defect as described in claim 1, which is characterized in that using fluorescence microscope or
Laser Scanning Confocal Microscope observes sample surfaces and section, and tracking enters the fluorescent molecule in sample defects, obtains glimmering
Light displaing micro picture.
6. the detection method of chip surface film layer defect as claimed in claim 5, which is characterized in that pass through the fluorescence microscopy
Picture judges size, position and the form of defect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811011997.5A CN109211928A (en) | 2018-08-31 | 2018-08-31 | The detection method of chip surface film layer defect |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811011997.5A CN109211928A (en) | 2018-08-31 | 2018-08-31 | The detection method of chip surface film layer defect |
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| Publication Number | Publication Date |
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| CN109211928A true CN109211928A (en) | 2019-01-15 |
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| CN201811011997.5A Pending CN109211928A (en) | 2018-08-31 | 2018-08-31 | The detection method of chip surface film layer defect |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111323430A (en) * | 2020-03-09 | 2020-06-23 | 天津市捷威动力工业有限公司 | Method for detecting sol effect of polymer tab and application |
| CN111341683A (en) * | 2020-03-03 | 2020-06-26 | 胜科纳米（苏州）有限公司 | Method for detecting pinhole defect on passivation layer of semiconductor wafer |
| CN111537521A (en) * | 2020-05-15 | 2020-08-14 | 南通市国光光学玻璃有限公司 | Film-coated fluorescence penetration detection method for optical glass surface microcracks |
| CN111599707A (en) * | 2020-05-27 | 2020-08-28 | 广州粤芯半导体技术有限公司 | Method for detecting micro-cracks of passivation layer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341683A (en) * | 2020-03-03 | 2020-06-26 | 胜科纳米（苏州）有限公司 | Method for detecting pinhole defect on passivation layer of semiconductor wafer |
| CN111323430A (en) * | 2020-03-09 | 2020-06-23 | 天津市捷威动力工业有限公司 | Method for detecting sol effect of polymer tab and application |
| CN111537521A (en) * | 2020-05-15 | 2020-08-14 | 南通市国光光学玻璃有限公司 | Film-coated fluorescence penetration detection method for optical glass surface microcracks |
| CN111537521B (en) * | 2020-05-15 | 2022-02-11 | 南通市国光光学玻璃有限公司 | Film-coated fluorescence penetration detection method for optical glass surface microcracks |
| CN111599707A (en) * | 2020-05-27 | 2020-08-28 | 广州粤芯半导体技术有限公司 | Method for detecting micro-cracks of passivation layer |
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