CN207097853U - A kind of flip LED chips - Google Patents
A kind of flip LED chips Download PDFInfo
- Publication number
- CN207097853U CN207097853U CN201720723547.3U CN201720723547U CN207097853U CN 207097853 U CN207097853 U CN 207097853U CN 201720723547 U CN201720723547 U CN 201720723547U CN 207097853 U CN207097853 U CN 207097853U
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode
- led chips
- reflection
- passivation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model provides a kind of flip LED chips, cushion and ray structure are sequentially formed on substrate, wherein, ray structure includes the first semiconductor layer, active layer, second semiconductor layer, metal reflecting electrode layer, metal barrier, first reflection passivation layer, first electrode and second electrode, the second reflection passivation layer is formed on ray structure surface, second reflection passivation layer is performed etching, the first exposed region is formed in the first electrode surface, the second exposed region is formed in the second electrode surface, the first pad is formed in the first exposed region, the second pad is formed in the second exposed region.Pass through metal reflecting electrode layer, the first reflection passivation layer and the second reflection passivation layer from the light that active layer is sent, a part reflects away from the side wall of flip LED chips, a part is reflected back substrate side, under conditions of additional complexity technique is not increased, the light extraction efficiency of active layer is drastically increased, so as to improve the brightness of chip.
Description
Technical field
The present invention relates to a kind of LED technology field, more particularly to a kind of flip LED chips.
Background technology
LED (Light Emitting Diode, light emitting diode) is the shape that released energy when one kind utilizes Carrier recombination
Into luminous semiconductor devices, LED chip has that power consumption is low, colourity is pure, long lifespan, small volume, response time are fast, energy-conserving and environment-protective
Deng many advantages.
The luminous efficiency of LED chip is mainly determined by internal quantum efficiency and external quantum efficiency.At present, the interior amount of LED chips
Sub- efficiency has reached more than 90%, but external quantum efficiency is relatively low.Therefore, the external quantum efficiency of LED chip how is improved,
Through the focus on research direction as industry.
The content of the invention
The technical problems to be solved by the invention are, there is provided a kind of flip LED chips, simple in construction, external quantum efficiency
It is high.
In order to solve the above-mentioned technical problem, the invention provides a kind of flip LED chips, including：
Substrate；
Located at the cushion and ray structure of the substrate surface, the ray structure includes first located at substrate surface
Semiconductor layer, active layer, the first reflection passivation layer and first electrode located at first semiconductor layer surface, has located at described
Second semiconductor layer on active layer surface, located at the metal reflecting electrode layer of the second semiconductor layer surface, located at the metallic reflection
The metal barrier of electrode layer surface, passivation layer and second electrode are reflected located at the first of the metal barrier layer surface, it is described
Mutually insulated between first electrode and the second electrode；Second located at ray structure surface reflects passivation layer；
Through the described second reflection passivation layer, located at the first pad of first electrode surface, located at second electrode surface
Second pad.
As the improvement of such scheme, the metal reflecting electrode layer is by one in ITO, Ag, Au, Al, Cr, Ni and Ti
Kind or several be made.
As the improvement of such scheme, the first reflection passivation layer or the second reflection passivation layer are by multilayer refractive index
Different reflecting materials are made.
As the improvement of such scheme, the reflecting material selects SiO2、Si3N4、TiO2、MgF2、CaF2、SrF2、BaF2、
ZnSe、ZnS、ZrO2、Al2O3In two or more.
Implement the present invention, have the advantages that：
1st, a kind of flip LED chips provided by the invention, layer of metal reflecting electrode is formed in the second semiconductor layer surface
Layer, is reflected back substrate side, under conditions of additional complexity technique is not increased, so as to improve chip by the light away from substrate side
Light extraction efficiency, and then improve chip brightness.
2nd, a kind of flip LED chips provided by the invention, the first reflection passivation layer is formed in metal barrier layer surface, by portion
Divide the light through metal reflecting electrode layer to be reflected away from the side wall of flip LED chips, metal reflecting electrode layer will be partially passed through
Light be reflected back substrate side, so as to improve the light extraction efficiency of chip, and then improve the brightness of chip.
3rd, a kind of flip LED chips provided by the invention, the second reflection passivation layer is formed on the ray structure surface, from
The light that active layer is sent passes through first reflecting layer, partly passes through the described second side of the reflection passivation layer from flip LED chips
Wall reflects away, is partly reflected back substrate side by the described second reflection passivation layer, drastically increases the light extraction of active layer
Efficiency, so as to improve the brightness of chip.In addition, the second reflection passivation layer has been wrapped up outside first electrode and second electrode
Whole flip LED chips surface, has also wrapped up the side wall that active layer exposes after etching, has effectively been passivated whole flip LED
Chip surface, the electrology characteristic of flip LED chips on the one hand is improved by reducing surface leakage, on the other hand in active area side
Wall reduces non-radiative recombination, adds radiation recombination.
Brief description of the drawings
Fig. 1 is a kind of preparation method flow chart of flip LED chips of the embodiment of the present invention；
Fig. 2 a are that the flip LED chips of the embodiment of the present invention form the structural representation of cushion and ray structure；
Fig. 2 b are the structural representation that the flip LED chips of the embodiment of the present invention form the second reflection passivation layer；
Fig. 2 c are that the flip LED chips of the embodiment of the present invention form the first exposed region and the structure of the second exposed region is shown
It is intended to；
Fig. 2 d are the structural representation of the flip LED chips of the embodiment of the present invention；
Fig. 3 is the preparation method flow chart of the ray structure of the embodiment of the present invention；
Fig. 4 is a kind of preparation method flow chart of flip LED chips of another embodiment of the present invention.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing
It is described in detail on step ground.
The preparation method embodiment one of flip LED chips
A kind of preparation method of flip LED chips is present embodiments provided, its flow chart is as shown in figure 1, including following step
Suddenly：
S1：One substrate is provided；
The material of substrate can be sapphire, carborundum or silicon, or other semi-conducting materials, it is excellent in the present embodiment
It is Sapphire Substrate to select substrate.Specifically, the substrate is nano-pattern substrate, flip LED chips from substrate side light extraction,
Substrate makes nano-pattern, increases diffraction efficiency, so as to improve the light extraction efficiency of flip LED chips.
S2：Cushion and ray structure are sequentially formed over the substrate；
Wherein, the ray structure includes the first semiconductor layer located at substrate surface, located at first semiconductor layer
The active layer on surface, the first reflection passivation layer and first electrode, located at the second semiconductor layer of the active layer surface, located at the
The metal reflecting electrode layer of two semiconductor layer surfaces, located at the metal barrier on the metal reflecting electrode layer surface and the second electricity
Pole, first located at the metal barrier layer surface reflects passivation layer, between the first electrode and the second electrode mutually
Insulation.
As shown in Figure 2 a, cushion 11 and ray structure 20 are sequentially formed on the surface of substrate 10, the ray structure 20 wraps
Include the first semiconductor layer 21 located at the surface of cushion 11, the active layer 22, first located at the surface of the first semiconductor layer 21
Reflect passivation layer 26 and first electrode 211, the second semiconductor layer 23 located at the surface of active layer 22, led located at the second half
The metal reflecting electrode layer 24 on the surface of body layer 23, the metal barrier 25 located at the surface of metal reflecting electrode layer 24, is located at
The first reflection passivation layer 26 and second electrode 231 on the surface of metal barrier 25, the first electrode 211 and described second
Mutually insulated between electrode 231.
Preferably, the material of the cushion is AlGaN, but not limited to this.
Specifically, the embodiment of the present application provide luminous micro-structural preparation method, its flow chart as shown in Fig. 3, including
Following steps：
S21：The first semiconductor layer, active layer and the second semiconductor layer are sequentially formed in the buffer-layer surface；
Specifically, the first semiconductor layer and the second semiconductor layer that the embodiment of the present application provides are gallium nitride-based semiconductor
Layer, active layer is gallium nitride base active layer；In addition, the embodiment of the present application provide the first semiconductor layer, the second semiconductor layer and
The material of active layer can also be other materials, and this application is not particularly limited.
Wherein, the first semiconductor layer can be n type semiconductor layer, then the second semiconductor layer is p type semiconductor layer；Or
First semiconductor layer is p type semiconductor layer, and the second semiconductor layer is n type semiconductor layer, for the first semiconductor layer and second
The conduction type of semiconductor layer is not particularly limited to this application, it is necessary to be designed according to practical application.
S22：Second semiconductor layer and the active layer are performed etching, formed through second semiconductor layer and
The active layer, and extend to the first through hole of first semiconductor layer；Using etching technics to second semiconductor layer
Performed etching with the active layer.The etching technics that the embodiment of the present application provides can be dry etch process, or wet
Method etching technics, this application is not particularly limited, it is necessary to be chosen according to practical application.
S23：Metal reflecting electrode layer, metal barrier are sequentially formed in second semiconductor layer surface；The metal
Reflection electrode layer is formed using depositing operation in the second semiconductor layer surface, and the metal barrier is to use magnetron sputtering
Technique is formed on the metal reflecting electrode layer surface, and the first reflection passivation layer is that using plasma strengthens chemical gas
Phase sedimentation (PECVD) technique is formed in the metal barrier layer surface.Specifically, the metal reflecting electrode layer by ITO,
One or more in Ag, Au, Al, Cr, Ni and Ti are made.
S24：The first reflection passivation layer is formed in the metal barrier layer surface and first through hole；First reflection is blunt
Change layer to be made up of the different reflecting material of multilayer refractive index.The reflecting material selects SiO2、Si3N4、TiO2、MgF2、CaF2、
SrF2、BaF2、ZnSe、ZnS、ZrO2、Al2O3In two or more.
The light that flip LED chips are sent from active layer, part is directly sent from substrate side, partly from away from substrate side
Send, so as to reduce light extraction efficiency.At present, conventional method is anti-away from the side of substrate formation distributed Bragg
Mirror (DBR) layer is penetrated to reflect the light away from substrate side.But the equipment for forming DBR layers is expensive, complex process.The application's falls
LED chip is filled by forming layer of metal reflection electrode layer in the second semiconductor layer surface, by the light reflection away from substrate side
Substrate side is gone back to, so as to improve the light extraction efficiency of chip, and then improves the brightness of chip.In addition, compared with DBR layer, metal is anti-
Penetrating electrode layer has more preferably Ohmic contact.Further, the flip LED chips of the application pass through in metal barrier layer surface shape
Into the first reflection passivation layer, the light for partially passing through metal reflecting electrode layer is reflected away from the side wall of flip LED chips, by portion
Divide the light through metal reflecting electrode layer to be reflected back substrate side, so as to improve the light extraction efficiency of chip, and then improve chip
Brightness.It is not required to increase extra manufacture craft, by changing the manufacture craft of the first reflection passivation layer, it is blunt changes the first reflection
Change the structure and performance of layer, make the function of the first existing reflection of reflection passivation layer, the function of having passivation again, and then improve upside-down mounting
The light extraction efficiency of LED chip.
S25：Described first reflection passivation layer is performed etching, forming first electrode into surface in first semiconductor leads to
Hole, second electrode through hole is formed in the metal barrier layer surface；The described first reflection passivation layer is carried out using etching technics
Etching, first electrode through hole are the region for forming first electrode, wherein, the area of first electrode is less than first electrode through hole
Area, first electrode is avoided to be contacted with laminations such as active layer, the second semiconductor layers；Second electrode through hole is to form second electrode
Region, wherein, the area of second electrode is less than the area of second electrode through hole, avoids second electrode from reflecting passivation layer with first
Contact.The etching technics that the embodiment of the present application provides can be dry etch process, or wet-etching technology, to this
Application is not particularly limited, it is necessary to be chosen according to practical application.
S26：First electrode is formed in the first electrode through hole, second electrode is formed in the second electrode through hole, and
Mutually insulated between the first electrode and the second electrode.
Filling gold is deposited in the first electrode through hole using electron beam evaporation plating, magnetron sputtering, plating or chemical plating process
Belong to layer formed first electrode, the second electrode through hole deposit filling metal level formed second electrode, the first electrode and
Mutually insulated between the second electrode.Preferably, the first electrode or the second electrode by Cr, Ni, Al, Ti, Au,
One or more in Pt, W, Pb, Rh, Sn, Cu, Ag are made.
S3：The second reflection passivation layer is formed on the ray structure surface；
As described in Fig. 2 b, using plasma strengthens chemical vapour deposition technique (PECVD) technique on the surface of ray structure 20
Form the second reflection passivation layer 30.Specifically, the second reflection passivation layer is made up of the different reflecting material of multilayer refractive index.
Preferably, the reflecting material selects SiO2、Si3N4、TiO2、MgF2、CaF2、 SrF2、BaF2、ZnSe、ZnS、ZrO2、Al2O3In
Two or more.The light sent from active layer passes through first reflecting layer, is partly passivated by the described second reflection
Layer reflects away from the side wall of flip LED chips, is partly reflected back substrate side by the described second reflection passivation layer, greatly
The light extraction efficiency of active layer is improved, so as to improve the brightness of chip.In addition, the second reflection passivation layer has wrapped up first
Whole flip LED chips surface outside electrode and second electrode, has also wrapped up the side wall that active layer exposes after etching, effectively
Whole flip LED chips surface has been passivated, has on the one hand improved the electrology characteristic of flip LED chips by reducing surface leakage,
On the other hand non-radiative recombination is reduced in active region sidewalls, adds radiation recombination.It is not required to increase extra manufacture craft, leads to
The manufacture craft for changing the second reflection passivation layer is crossed, the structure and performance of the second reflection passivation layer is changed, makes the second reflection blunt
Change the function of the existing reflection of layer, the function of having passivation again, and then improve the light extraction efficiency of flip LED chips.
S4：Described second reflection passivation layer is performed etching, the first exposed region is formed in the first electrode surface,
The second electrode surface forms the second exposed region；
As described in Fig. 2 c, the described second reflection passivation layer 30 is performed etching using etching technics, in the first electrode
211 surfaces form the first exposed region 31, and the second exposed region 32 is formed on the surface of second electrode 231.First exposed area
Domain is the region for forming the first pad, and the second exposed region is the region for forming the second pad, wherein, the face of the first pad
Product is less than the area of first electrode, and the area of the second pad is less than the area of second electrode, reduction resistance, reduction chip voltage.
The etching technics that the embodiment of the present application provides can be dry etch process, or wet-etching technology, to this application
It is not particularly limited, it is necessary to be chosen according to practical application.
S5：The first pad is formed in first exposed region, the second pad is formed in second exposed region.
As described in Fig. 2 d, using electron beam evaporation plating, magnetron sputtering, plating or chemical plating process in first exposed region
Deposition filling metal level forms the first pad 41, and depositing filling metal level in second exposed region forms the second pad 42.
First pad is connected with the first electrode, and second pad is connected with the second electrode, in follow-up encapsulation
Cheng Zhong, it need to only be welded by the first pad and the second pad with package substrate, be not required to routing, technique is simple, and cost is low.It is excellent
Choosing, first pad or second pad by one kind in Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh, Sn, Cu, Ag
Or several it is made.
The preparation method embodiment two of flip LED chips
A kind of preparation method of flip LED chips is present embodiments provided, its flow chart is as shown in figure 4, including following step
Suddenly：
S1：One substrate is provided；
The material of substrate can be sapphire, carborundum or silicon, or other semi-conducting materials, it is excellent in the present embodiment
It is Sapphire Substrate to select substrate.Specifically, the substrate is nano-pattern substrate, flip LED chips from substrate side light extraction,
Substrate makes nano-pattern, increases diffraction efficiency, so as to improve the light extraction efficiency of flip LED chips.
S2：Cushion, epitaxial layer, metal reflecting electrode layer and metal barrier are sequentially formed over the substrate；
Wherein, the epitaxial layer includes the first semiconductor layer, active layer and the second semiconductor layer sequentially formed.
Specifically, the first semiconductor layer and the second semiconductor layer that the embodiment of the present application provides are gallium nitride-based semiconductor
Layer, active layer is gallium nitride base active layer；In addition, the embodiment of the present application provide the first semiconductor layer, the second semiconductor layer and
The material of active layer can also be other materials, and this application is not particularly limited.
Wherein, the first semiconductor layer can be n type semiconductor layer, then the second semiconductor layer is p type semiconductor layer；Or
First semiconductor layer is p type semiconductor layer, and the second semiconductor layer is n type semiconductor layer, for the first semiconductor layer and second
The conduction type of semiconductor layer is not particularly limited to this application, it is necessary to be designed according to practical application.
The metal reflecting electrode layer is formed using depositing operation in the second semiconductor layer surface, the metal barrier
Layer is to be formed using magnetron sputtering technique on the metal reflecting electrode layer surface, specifically, the metal reflecting electrode layer
It is made up of the one or more in ITO, Ag, Au, Al, Cr, Ni and Ti.The light that flip LED chips are sent from active layer, part are straight
Connect from substrate side and send, partly sent from away from substrate side, so as to reduce light extraction efficiency.At present, conventional method
It is to form distributed bragg reflector mirror (DBR) layer away from the side of substrate to reflect the light away from substrate side.But formed
The equipment of DBR layer is expensive, complex process.The flip LED chips of the application in the second semiconductor layer surface by forming one layer of gold
Belong to reflection electrode layer, the light away from substrate side is reflected back substrate side, so as to improve the light extraction efficiency of chip, and then improve
The brightness of chip.
S3：The metal barrier is performed etching, formed through the metal barrier, metal reflecting electrode layer, the
Two semiconductor layers and active layer, and extend to the first through hole of first semiconductor layer；
The metal barrier is performed etching using etching technics.The embodiment of the present application provide etching technics can be
Dry etch process, or wet-etching technology, be not particularly limited to this application, it is necessary to be carried out according to practical application
Choose.
S4：The first reflection passivation layer is formed in the metal reflecting electrode layer surface and first through hole, and to described the
One reflection passivation layer is performed etching, and first electrode through hole is formed into surface in first semiconductor, in metallic reflection electricity
Pole layer surface forms second electrode through hole；
First using plasma strengthens chemical vapour deposition technique (PECVD) technique in the metal barrier layer surface and first
The first reflection passivation layer is formed in through hole, then the described first reflection passivation layer is performed etching using etching technics, described
First semiconductor forms first electrode through hole into surface, and first electrode through hole is the region for forming first electrode, wherein, first
The area of electrode is less than the area of first electrode through hole, avoids first electrode from being contacted with laminations such as active layer, the second semiconductor layers；
Second electrode through hole is the region for forming second electrode, wherein, the area of second electrode is less than the area of second electrode through hole,
Avoid second electrode from reflecting passivation layer with first to contact.The etching technics that the embodiment of the present application provides can be dry etching work
Skill, or wet-etching technology, be not particularly limited to this application, it is necessary to be chosen according to practical application.Specifically
, the metal reflecting electrode layer is made up of the one or more in ITO, Ag, Au, Al, Cr, Ni and Ti.First reflection
Passivation layer is made up of the different reflecting material of multilayer refractive index.The reflecting material selects SiO2、Si3N4、TiO2、MgF2、CaF2、
SrF2、BaF2、ZnSe、ZnS、ZrO2、Al2O3In two or more.The flip LED chips of the application in metal by hindering
Barrier surface forms the first reflection passivation layer, and the light for partially passing through metal reflecting electrode layer is rolled over from the side wall of flip LED chips
It is shot out, the light for partially passing through metal reflecting electrode layer is reflected back substrate side, so as to improve the light extraction efficiency of chip, and then
Improve the brightness of chip.It is not required to increase extra manufacture craft, by changing the manufacture craft of the first reflection passivation layer, changes
The structure and performance of first reflection passivation layer, make the function of the first existing reflection of reflection passivation layer, the function of having passivation again, and then
Improve the light extraction efficiency of flip LED chips.
S5：First electrode is formed in the first electrode through hole, second electrode is formed in the second electrode through hole, obtains
LED wafer；
Filling gold is deposited in the first electrode through hole using electron beam evaporation plating, magnetron sputtering, plating or chemical plating process
Belong to layer and form first electrode, depositing filling metal level in the second electrode through hole forms second electrode, obtains LED wafer, its
In, mutually insulated between the first electrode and the second electrode.Preferably, the first electrode or the second electrode by
One or more in Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh, Sn, Cu, Ag are made.
S6：The second reflection passivation layer is formed on the LED wafer surface；
It is blunt in the reflection of LED wafer surface formation second that using plasma strengthens chemical vapour deposition technique (PECVD) technique
Change layer.Specifically, the second reflection passivation layer is made up of the different reflecting material of multilayer refractive index.Preferably, the reflection
Material selection SiO2、Si3N4、TiO2、MgF2、CaF2、SrF2、BaF2、ZnSe、 ZnS、ZrO2、Al2O3In two kinds or two kinds with
On.The light sent from active layer passes through first reflecting layer, partly reflects passivation layer from flip LED chips by described second
Side wall reflect away, partly by described second reflection passivation layer be reflected back substrate side, drastically increase active layer
Light extraction efficiency, so as to improve the brightness of chip.In addition, the second reflection passivation layer has wrapped up first electrode and second electrode
Outer whole flip LED chips surface, has also wrapped up the side wall that active layer exposes after etching, has effectively been passivated whole upside-down mounting
LED chip surface, the electrology characteristic of flip LED chips on the one hand is improved by reducing surface leakage, on the other hand active
Area's side wall reduces non-radiative recombination, adds radiation recombination.It is not required to increase extra manufacture craft, by changing the second reflection
The manufacture craft of passivation layer, the structure and performance of the second reflection passivation layer are changed, make the second existing reflection of reflection passivation layer
Function, there is the function of passivation again, and then improve the light extraction efficiency of flip LED chips.
S7：Described second reflection passivation layer is performed etching, the first exposed region is formed in the first electrode surface,
The second electrode surface forms the second exposed region；
The described second reflection passivation layer is performed etching using etching technics, it is naked to form first in the first electrode surface
Reveal region, the second exposed region is formed in the second electrode surface.First exposed region is the region for forming the first pad,
Second exposed region is to form the region of the second pad, wherein, the area of the first pad is less than the area of first electrode, and second
The area of pad is less than the area of second electrode, reduces resistance, reduces chip voltage.The etching technics that the embodiment of the present application provides
Can be dry etch process, or wet-etching technology, this application is not particularly limited, it is necessary to be answered according to actual
With being chosen.
S8：The first pad is formed in first exposed region, the second pad is formed in second exposed region.
Filling gold is deposited in first exposed region using electron beam evaporation plating, magnetron sputtering, plating or chemical plating process
Belong to layer and form the first pad, depositing filling metal level in second exposed region forms the second pad.First pad with
First electrode connection, second pad is connected with the second electrode, need to be by the in follow-up encapsulation process
One pad and the second pad are welded with package substrate, are not required to routing, and technique is simple, and cost is low.Preferably, first weldering
The material of disk or second pad is one or more of systems in Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh, Sn, Cu, Ag
Into.
The invention provides a kind of LED chip, its structural representation as shown in Figure 2 d, including：
Substrate 10；
Located at the cushion 11 and ray structure 20 of the substrate surface, the ray structure 20 includes being located at substrate surface
The first semiconductor layer 21, located at the surface of the first semiconductor layer 21 active layer 22, first reflect passivation layer 26 and first
Electrode 211, the second semiconductor layer 23 located at the surface of active layer 22, the metallic reflection located at the surface of the second semiconductor layer 23
Electrode layer 24, the metal barrier 25 located at the surface of metal reflecting electrode layer 24, located at the surface of metal barrier 25
The first reflection passivation layer 26 and second electrode 231, mutually insulated between the first electrode 211 and the second electrode 231；
Second located at the surface of ray structure 20 reflects passivation layer 30；
Through the described second reflection passivation layer 30, the first pad 41 located at the surface of first electrode 211, located at second electrode
Second pad 42 on 231 surfaces.
Implement the present invention, have the advantages that：
1st, a kind of flip LED chips provided by the invention, layer of metal reflecting electrode is formed in the second semiconductor layer surface
Layer, is reflected back substrate side, under conditions of additional complexity technique is not increased, so as to improve chip by the light away from substrate side
Light extraction efficiency, and then improve chip brightness.
2nd, a kind of flip LED chips provided by the invention, the first reflection passivation layer is formed in metal barrier layer surface, by portion
Divide the light through metal reflecting electrode layer to be reflected away from the side wall of flip LED chips, metal reflecting electrode layer will be partially passed through
Light be reflected back substrate side, so as to improve the light extraction efficiency of chip, and then improve the brightness of chip.
3rd, a kind of flip LED chips provided by the invention, the second reflection passivation layer is formed on the ray structure surface, from
The light that active layer is sent passes through first reflecting layer, partly passes through the described second side of the reflection passivation layer from flip LED chips
Wall reflects away, is partly reflected back substrate side by the described second reflection passivation layer, drastically increases the light extraction of active layer
Efficiency, so as to improve the brightness of chip.In addition, the second reflection passivation layer has been wrapped up outside first electrode and second electrode
Whole flip LED chips surface, has also wrapped up the side wall that active layer exposes after etching, has effectively been passivated whole flip LED
Chip surface, the electrology characteristic of flip LED chips on the one hand is improved by reducing surface leakage, on the other hand in active area side
Wall reduces non-radiative recombination, adds radiation recombination.
The above disclosed power for being only a kind of preferred embodiment of the present invention, the present invention can not being limited with this certainly
Sharp scope, therefore the equivalent variations made according to the claims in the present invention, still belong to the scope that the present invention is covered.
Claims (4)
1. a kind of flip LED chips, including：
Substrate；
Located at the cushion and ray structure of the substrate surface, the ray structure includes leading located at the first the half of substrate surface
Body layer, active layer, the first reflection passivation layer and first electrode located at first semiconductor layer surface, located at the active layer
Second semiconductor layer on surface, located at the metal reflecting electrode layer of the second semiconductor layer surface, located at the metallic reflective electrodes
The metal barrier of layer surface, reflect passivation layer and second electrode located at the first of the metal barrier layer surface, described first
Mutually insulated between electrode and the second electrode；
Second located at ray structure surface reflects passivation layer；
Through the described second reflection passivation layer, located at the first pad of first electrode surface, located at the second of second electrode surface
Pad.
2. flip LED chips according to claim 1, it is characterised in that the metal reflecting electrode layer by ITO, Ag,
One or more in Au, Al, Cr, Ni and Ti are made.
3. flip LED chips according to claim 1 or 2, it is characterised in that the first reflection passivation layer or described the
Two reflection passivation layers are made up of the different reflecting material of multilayer refractive index.
4. flip LED chips according to claim 3, it is characterised in that the reflecting material selects SiO2、Si3N4、
TiO2、MgF2、CaF2、SrF2、BaF2、ZnSe、ZnS、ZrO2、Al2O3In two or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720723547.3U CN207097853U (en) | 2017-06-21 | 2017-06-21 | A kind of flip LED chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720723547.3U CN207097853U (en) | 2017-06-21 | 2017-06-21 | A kind of flip LED chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207097853U true CN207097853U (en) | 2018-03-13 |
Family
ID=61553428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720723547.3U Active CN207097853U (en) | 2017-06-21 | 2017-06-21 | A kind of flip LED chips |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207097853U (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400227A (en) * | 2018-05-04 | 2018-08-14 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN108470812A (en) * | 2018-06-04 | 2018-08-31 | 佛山市国星半导体技术有限公司 | A kind of film flip LED chips and preparation method thereof |
| CN108987557A (en) * | 2018-07-04 | 2018-12-11 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof, LED component |
| CN109004076A (en) * | 2017-06-21 | 2018-12-14 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN109345963A (en) * | 2018-10-12 | 2019-02-15 | 芯光科技新加坡有限公司 | A kind of display device and its packaging method |
| CN109342915A (en) * | 2018-08-29 | 2019-02-15 | 佛山市国星半导体技术有限公司 | A kind of detection method for the LED chip that leaks electricity |
| CN111554640A (en) * | 2020-05-06 | 2020-08-18 | 上海朕芯微电子科技有限公司 | Power semiconductor chip electrode structure applied to embedded substrate packaging and preparation method |
| CN111799358A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of LED chip with Sn bonding pad |
| CN111799357A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of LED chip with tin bonding pad |
| CN111799356A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Design method of LED chip with bump bonding pad |
| CN112688163A (en) * | 2020-12-10 | 2021-04-20 | 华慧科锐(天津)科技有限公司 | Irregular reflector structure of distributed feedback laser |
| CN113410363A (en) * | 2021-06-17 | 2021-09-17 | 中国科学院半导体研究所 | Micro LED chip structure, preparation method thereof and display device |
| CN113540311A (en) * | 2021-07-15 | 2021-10-22 | 厦门三安光电有限公司 | Flip-chip light emitting diode and light emitting device |
| US11784293B2 (en) | 2020-06-05 | 2023-10-10 | Au Optronics Corporation | Display panel and tiled display |
-
2017
- 2017-06-21 CN CN201720723547.3U patent/CN207097853U/en active Active
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109004076A (en) * | 2017-06-21 | 2018-12-14 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN108400227A (en) * | 2018-05-04 | 2018-08-14 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN108400227B (en) * | 2018-05-04 | 2023-08-15 | 佛山市国星半导体技术有限公司 | Flip LED chip and manufacturing method thereof |
| CN108470812A (en) * | 2018-06-04 | 2018-08-31 | 佛山市国星半导体技术有限公司 | A kind of film flip LED chips and preparation method thereof |
| CN108987557A (en) * | 2018-07-04 | 2018-12-11 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof, LED component |
| CN109342915A (en) * | 2018-08-29 | 2019-02-15 | 佛山市国星半导体技术有限公司 | A kind of detection method for the LED chip that leaks electricity |
| CN109345963B (en) * | 2018-10-12 | 2020-12-18 | 芯光科技新加坡有限公司 | Display device and packaging method thereof |
| CN109345963A (en) * | 2018-10-12 | 2019-02-15 | 芯光科技新加坡有限公司 | A kind of display device and its packaging method |
| CN111554640A (en) * | 2020-05-06 | 2020-08-18 | 上海朕芯微电子科技有限公司 | Power semiconductor chip electrode structure applied to embedded substrate packaging and preparation method |
| US11784293B2 (en) | 2020-06-05 | 2023-10-10 | Au Optronics Corporation | Display panel and tiled display |
| CN111799357A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of LED chip with tin bonding pad |
| CN111799356A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Design method of LED chip with bump bonding pad |
| CN111799358A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of LED chip with Sn bonding pad |
| CN112688163A (en) * | 2020-12-10 | 2021-04-20 | 华慧科锐(天津)科技有限公司 | Irregular reflector structure of distributed feedback laser |
| CN113410363A (en) * | 2021-06-17 | 2021-09-17 | 中国科学院半导体研究所 | Micro LED chip structure, preparation method thereof and display device |
| CN113540311A (en) * | 2021-07-15 | 2021-10-22 | 厦门三安光电有限公司 | Flip-chip light emitting diode and light emitting device |
| CN113540311B (en) * | 2021-07-15 | 2022-11-22 | 厦门三安光电有限公司 | Flip-chip light emitting diode and light emitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207097853U (en) | A kind of flip LED chips | |
| CN106340576B (en) | Light emitting element and light emitting device | |
| TWI274427B (en) | Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same | |
| CN108922950B (en) | High-brightness flip LED chip and manufacturing method thereof | |
| US8729580B2 (en) | Light emitter with metal-oxide coating | |
| CN100483755C (en) | High power LED flip-chip and its manufacturing method | |
| JP2009537982A (en) | Low optical loss electrode structure for LED | |
| CN208637453U (en) | A kind of high brightness flip LED chips | |
| CN109659414A (en) | A kind of flip LED chips and preparation method thereof | |
| CN109004076A (en) | A kind of flip LED chips and preparation method thereof | |
| CN104241511B (en) | Method for manufacturing high-brightness flip ultraviolet LED chips | |
| CN105489721A (en) | LED flip chip comprising reflecting layer and preparation method of LED flip chip | |
| CN101840978B (en) | Light emitting device | |
| CN105489742A (en) | LED flip chip and preparation method thereof | |
| CN114141925B (en) | Light emitting diode | |
| CN106409997A (en) | LED chip and formation method thereof | |
| CN108172674A (en) | A kind of flip LED chips and preparation method thereof | |
| JP2002246648A (en) | Wavelength conversion type semiconductor device | |
| TW201110419A (en) | Light emitting semiconductor device and method for manufacturing | |
| CN106848006A (en) | Flip LED chips and preparation method thereof | |
| CN205355082U (en) | LED flip chip | |
| KR101039948B1 (en) | Light emitting device, method for fabricating the light emitting device and light emitting device package | |
| CN208797027U (en) | The flip-chip of light emitting diode | |
| CN109768137A (en) | Light emitting diode (LED) chip with vertical structure and preparation method thereof | |
| CN109087981A (en) | A kind of anticreep LED chip and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |