CN109326959B - Dual-wavelength semiconductor laser chip structure - Google Patents
Dual-wavelength semiconductor laser chip structure Download PDFInfo
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- CN109326959B CN109326959B CN201710644176.4A CN201710644176A CN109326959B CN 109326959 B CN109326959 B CN 109326959B CN 201710644176 A CN201710644176 A CN 201710644176A CN 109326959 B CN109326959 B CN 109326959B
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- epitaxial wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
A dual wavelength semiconductor laser chip structure comprising: the lower end face of the epitaxial wafer I is provided with a strip-shaped luminous zone protruding outwards, and the width of the strip-shaped luminous zone is 3‑4
(ii) a And an epitaxial wafer II, wherein the upper end surface of the epitaxial wafer II is provided with an inwards concave groove-shaped luminous zone, and the width of the groove-shaped luminous zone is 8-10
(ii) a The lower end face of the epitaxial wafer I is fixedly bonded with the upper end face of the epitaxial wafer II, and the strip-shaped luminous areas are inserted into the corresponding groove-shaped luminous areas. The epitaxial wafer I and the epitaxial wafer II are bonded through a bonding process, and meanwhile, the strip-shaped light emitting area on the epitaxial wafer I is inserted into the groove-shaped light emitting area on the epitaxial wafer II, so that the characteristic that a laser chip emits laser with two wavelengths simultaneously is formed, the manufacturing process is simple, and the laser chip can be fully applied to the medical field of dual-wavelength lasers and the field of night vision gun aiming. Since the optical coupling technology and the complicated optical lens are not required, the manufacturing cost of the dual-wavelength semiconductor laser is greatly reduced.
Description
Technical Field
The utility model relates to a semiconductor laser field, concretely relates to dual wavelength semiconductor laser chip structure.
Background
The semiconductor laser has the advantages of high efficiency, long service life, high light beam quality, good stability, compact structure and the like, and is widely applied to the fields of optical fiber communication, laser pumping, medical instruments, ordnance aiming, laser printers and the like. Since the birth of laser, the laser technology has been an effective means of clinical treatment, and has gradually developed into a key technology of medical diagnosis, and many problems in medicine are solved, which contributes to the development of medicine. At present, laser medicine forms a mature and stable market, and keeps a continuous and strong development trend in basic research, new technology development, new equipment development and production and the like. The development of semiconductor laser is said to be new and different day by day for more than twenty years, the semiconductor laser has small volume, is movable, is easy to overhaul and has lower installation environment, and along with the continuous improvement of the output power, the expansion of the wavelength range becomes a powerful competitor of other types of lasers in recent years, and has the tendency of partially replacing other lasers such as He-Ne, CO2 and the like, and along with the continuous improvement of the optical quality of the development of the technology, the application of the semiconductor laser in medicine gradually occupies the mainstream.
The application of laser technology in medicine is divided into two categories, namely laser diagnosis and laser therapy (including laser cosmetology), wherein the laser is used as an information carrier, and the laser is used as an energy carrier. Different wavelengths, different forms of laser light differ in the medical aspects in which they are good. In laser treatment instruments, two wavelengths of lasers exist at the same time, visible light such as red light is used as a target indication of a treatment part, and other wavelengths such as 808nm, 980nm and the like are used as treatment lasers.
In recent years, the laser gun aiming market is mature day by day, particularly, all countries pay more attention to night battle systems, an infrared laser sighting device is used at night, a visible laser sighting device is used in the daytime, and two different lasers are required to be assembled into the same sighting device.
Aiming at the application and application of the existing dual-wavelength laser, the current method is to respectively package a 650nm laser and a 808nm laser into a laser tube shell and then couple the lasers with the two wavelengths together by using an optical fiber coupling technology; the other is to couple the light emitted by the two lasers together by combining the lasers with two wavelengths by using a complex optical lens and using a spatial beam combining method. The two methods greatly improve the product cost, have complex process and have no cost advantage especially in the application occasions of medium and small power lasers.
Disclosure of Invention
The utility model discloses an overcome not enough of above technique, provide a chip can go out two kinds of wavelength laser and low in manufacturing cost's dual wavelength semiconductor laser chip structure simultaneously.
The utility model overcomes the technical scheme that its technical problem adopted is:
a dual wavelength semiconductor laser chip structure comprising:
the lower end face of the epitaxial wafer I is provided with a strip-shaped luminous zone protruding outwards, and the width of the strip-shaped luminous zone is 3-4
(ii) a And
the upper end surface of the epitaxial wafer II is provided with an inwards concave groove-shaped luminous zone, and the width of the groove-shaped luminous zone is 8-10
；
The depth of the groove-shaped luminous region is equal to the height of the strip-shaped luminous region, the lower end face of the epitaxial wafer I is fixedly bonded with the upper end face of the epitaxial wafer II, and the strip-shaped luminous region is inserted into the corresponding groove-shaped luminous region.
In order to share the positive electrode, the LED lamp further comprises a notch-shaped deep groove arranged at the outer side end of the epitaxial wafer II, a negative electrode I communicated with the strip-shaped luminous zone is arranged on the upper end face of the epitaxial wafer I, a negative electrode II communicated with the groove-shaped luminous zone is arranged on the lower end face of the epitaxial wafer II, and the positive electrode communicated with the strip-shaped luminous zone and the groove-shaped luminous zone respectively is arranged on the upper end face of the deep groove.
In order to improve the heat dissipation performance, the strip-shaped light emitting area is positioned in the middle of the groove-shaped light emitting area, and a heat dissipation channel is formed between the outer side surface of the strip-shaped light emitting area and the inner side surface of the groove-shaped light emitting area on the same side.
Preferably, the epitaxial wafer I and the epitaxial wafer II are bonded and fixed by a metal bonding process, and a metal bonding layer is formed between the lower end face of the epitaxial wafer I and the upper end face of the epitaxial wafer II.
Preferably, the width of the strip-shaped luminous zone is 4
。
Preferably, the width of the groove-shaped luminous zone is 8
。
Preferably, the deep groove has a width of 200
With a depth of 10-30
。
The utility model has the advantages that: the epitaxial wafer I and the epitaxial wafer II are bonded through a bonding process, and meanwhile, the strip-shaped light emitting area on the epitaxial wafer I is inserted into the groove-shaped light emitting area on the epitaxial wafer II, so that the characteristic that a laser chip emits laser with two wavelengths simultaneously is formed, the manufacturing process is simple, and the laser chip can be fully applied to the medical field of dual-wavelength lasers and the field of night vision gun aiming. Since the optical coupling technology and the complicated optical lens are not required, the manufacturing cost of the dual-wavelength semiconductor laser is greatly reduced.
Drawings
Fig. 1 is a schematic sectional structure of the present invention;
in the figure, 1, an epitaxial wafer I2, an epitaxial wafer II 3, a strip-shaped luminous region 4, a groove-shaped luminous region 5, a negative electrode I6, a negative electrode II 7, a deep groove 8 and a positive electrode are arranged.
Detailed Description
The present invention will be further explained with reference to fig. 1.
A dual wavelength semiconductor laser chip structure comprising: the lower end face of the epitaxial wafer I1 is provided with a strip-shaped luminous zone 3 protruding outwards, and the width of the strip-shaped luminous zone 3 is 3-4
(ii) a And an epitaxial wafer II 2, wherein the upper end surface of the epitaxial wafer II is provided with an inwards concave groove-shaped luminous zone 4, and the width of the groove-shaped luminous zone 4 is 8-10
(ii) a The depth of the groove-shaped luminous zone 4 is equal to the height of the strip-shaped luminous zone 3, the lower end face of the epitaxial wafer I1 is fixedly bonded with the upper end face of the epitaxial wafer II 2, and the strip-shaped luminous zone 3 is inserted into the corresponding groove-shaped luminous zone 4. The epitaxial wafer I1 and the epitaxial wafer II 2 are bonded through a bonding process, and the strip-shaped luminous zone 3 on the epitaxial wafer I1 is inserted into the groove-shaped luminous zone 4 on the epitaxial wafer II 2, so that the characteristic that one laser chip emits laser with two wavelengths simultaneously is formed,the manufacturing process is simple, and the method can be fully applied to the medical field of the dual-wavelength laser and the night vision gun aiming field. Since the optical coupling technology and the complicated optical lens are not required, the manufacturing cost of the dual-wavelength semiconductor laser is greatly reduced.
Example 1:
further, the epitaxial wafer comprises a notch-shaped deep groove 7 arranged at the outer side end of the epitaxial wafer II 2, a negative electrode I5 communicated with the strip-shaped luminous zone 3 is arranged on the upper end face of the epitaxial wafer I1, a negative electrode II 6 communicated with the groove-shaped luminous zone 4 is arranged on the lower end face of the epitaxial wafer II 2, and a positive electrode 8 respectively communicated with the strip-shaped luminous zone 3 and the groove-shaped luminous zone 4 is arranged on the upper end face of the deep groove 7. The deep groove 7 is formed in the epitaxial wafer II 2, so that the strip-shaped luminous region 3 and the groove-shaped luminous region 4 can share one positive electrode 8, the structure is further optimized, and the production and manufacturing cost is reduced.
Example 2:
preferably, the width of the strip-shaped luminous region 3 of the chip structure of the dual-wavelength semiconductor laser is 4
. The width of the groove-shaped luminous zone 4 is 8
。
Example 3:
preferably, the deep trench 7 of the present dual wavelength semiconductor laser chip structure has a width of 200
With a depth of 10-30
。
Example 4:
further, the strip-shaped luminous region 3 is located in the middle of the groove-shaped luminous region 4, and a heat dissipation channel is formed between the outer side surface of the strip-shaped luminous region 3 and the inner side surface of the groove-shaped luminous region 4 on the same side. Therefore, the heat dissipation performance of the semiconductor laser is improved, and the service life of the semiconductor laser is prolonged.
Example 5:
and the epitaxial wafer I1 and the epitaxial wafer II 2 are bonded and fixed by adopting a metal bonding process, and a metal bonding layer is formed between the lower end face of the epitaxial wafer I1 and the upper end face of the epitaxial wafer II 2. The metal bonding layer has excellent conductivity, and the conductivity of the epitaxial wafer I1, the epitaxial wafer II 2 and the positive electrode 8 is improved.
Claims (7)
1. A dual wavelength semiconductor laser chip structure, comprising:
the epitaxial wafer I (1) is provided with a strip-shaped luminous zone (3) protruding outwards on the lower end face, and the width of the strip-shaped luminous zone (3) is 3-4
(ii) a And
the upper end surface of the epitaxial wafer II (2) is provided with an inwards concave groove-shaped luminous zone (4), and the width of the groove-shaped luminous zone (4) is 8-10
；
The depth of the groove-shaped luminous regions (4) is equal to the height of the strip-shaped luminous regions (3), the lower end face of the epitaxial wafer I (1) is fixedly bonded with the upper end face of the epitaxial wafer II (2), and the strip-shaped luminous regions (3) are inserted into the corresponding groove-shaped luminous regions (4).
2. The dual wavelength semiconductor laser chip structure of claim 1, wherein: the epitaxial wafer is characterized by further comprising a notch-shaped deep groove (7) formed in the outer side end of the epitaxial wafer II (2), a negative electrode I (5) communicated with the strip-shaped light emitting area (3) is arranged on the upper end face of the epitaxial wafer I (1), a negative electrode II (6) communicated with the groove-shaped light emitting area (4) is arranged on the lower end face of the epitaxial wafer II (2), and a positive electrode (8) respectively communicated with the strip-shaped light emitting area (3) and the groove-shaped light emitting area (4) is arranged on the upper end face of the deep groove (7).
3. The dual wavelength semiconductor laser chip structure of claim 1, wherein: the strip-shaped luminous region (3) is positioned in the middle of the groove-shaped luminous region (4), and a heat dissipation channel is formed between the outer side surface of the strip-shaped luminous region (3) and the inner side surface of the groove-shaped luminous region (4) on the same side.
4. The dual wavelength semiconductor laser chip structure of claim 1, wherein: and the epitaxial wafer I (1) and the epitaxial wafer II (2) are bonded and fixed by adopting a metal bonding process, and a metal bonding layer is formed between the lower end face of the epitaxial wafer I (1) and the upper end face of the epitaxial wafer II (2).
5. The dual wavelength semiconductor laser chip structure as claimed in any one of claims 1 to 4, wherein: the width of the strip-shaped luminous zone (3) is 4
。
6. The dual wavelength semiconductor laser chip structure as claimed in any one of claims 1 to 4, wherein: the width of the groove-shaped luminous zone (4) is 8
。
7. The dual wavelength semiconductor laser chip structure of claim 2, wherein: the width of the deep groove (7) is 200
With a depth of 10-30
。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710644176.4A CN109326959B (en) | 2017-08-01 | 2017-08-01 | Dual-wavelength semiconductor laser chip structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710644176.4A CN109326959B (en) | 2017-08-01 | 2017-08-01 | Dual-wavelength semiconductor laser chip structure |
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| Publication Number | Publication Date |
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| CN109326959A CN109326959A (en) | 2019-02-12 |
| CN109326959B true CN109326959B (en) | 2020-03-27 |
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Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4033883B2 (en) * | 2003-10-15 | 2008-01-16 | 三洋電機株式会社 | Two-beam semiconductor laser device |
| US20070099321A1 (en) * | 2003-12-05 | 2007-05-03 | Mamoru Miyachi | Method for fabricating semiconductor laser device |
| CN2770169Y (en) * | 2005-02-25 | 2006-04-05 | 惠州市中科光电有限公司 | Three-wavelength semiconductor laser |
| JP2009076602A (en) * | 2007-09-19 | 2009-04-09 | Panasonic Corp | Two-wavelength semiconductor laser device, and manufacturing method thereof |
| JP2010205819A (en) * | 2009-03-02 | 2010-09-16 | Sharp Corp | Dual-wavelength semiconductor laser device |
| JP2011023628A (en) * | 2009-07-17 | 2011-02-03 | Mitsubishi Electric Corp | Semiconductor laser device |
| JP2012044015A (en) * | 2010-08-20 | 2012-03-01 | Sanyo Electric Co Ltd | Semiconductor laser device and optical device |
| CN102957094B (en) * | 2011-08-22 | 2014-11-26 | 山东浪潮华光光电子有限公司 | Full-solid-sate tri-phosphor laser chip and manufacturing method thereof |
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