CN205488993U - Novel semiconductor laser - Google Patents
Novel semiconductor laser Download PDFInfo
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- CN205488993U CN205488993U CN201620244597.9U CN201620244597U CN205488993U CN 205488993 U CN205488993 U CN 205488993U CN 201620244597 U CN201620244597 U CN 201620244597U CN 205488993 U CN205488993 U CN 205488993U
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- laser
- light beam
- semiconductor laser
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- effect
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Abstract
The utility model discloses a novel semiconductor laser, comprising a base plate, the bottom plate top is connected with the tube, be equipped with the shock attenuation piece in the tube, shock attenuation piece top is connected with laser electric welding layer, laser electric welding layer top is connected with the TEC refrigerator, TEC refrigerator top lug connection has the thermal pad layer, thermal pad layer top is connected with heat sinkly, be equipped with board in a poor light on heat sink, board one side in a poor light is equipped with thermistor, thermistor one side is equipped with the laser instrument, the laser instrument is connected with the biography light beam, it is connected with the metal sleeve to pass the light beam, the metal sleeve is connected with the aglet through soldering tin, the aglet is connected with the condenser tube ferrule, launches and effect tied in a bundle with overflowing through utilizing lens, and the illumination effect is concentrated in the total reflection effect with after the casual transmission of illumination intensity process that can be simply energy -conserving, makes it expand the maximize to, improves the efficiency of laser production, carries out illumination intensity's regulation according to the demand, plays enhancement illumination intensity's effect.
Description
Technical field
This utility model relates to semiconductor light-emitting equipment technical field, is specifically related to a kind of Semiconductor Laser.
Background technology
Semiconductor laser, also known as laser diode, is the use semi-conducting material laser instrument as operation material, owing to material is tied
Difference on structure, the detailed process that variety classes produces laser is more special, and conventional operation material has GaAs (GaAs), sulfuration
Cadmium (CdS), indium phosphide (InP), zinc sulfide (ZnS) etc., energisation mode has electrical pumping, electron beam excitation and three kinds of forms of optical pumping,
Semiconductor laser device, can be divided into homojunction, single heterojunction, double heterojunction etc. several, and homojunction laser and single heterojunction swash
Light device mostly is pulse device when room temperature, and can realize during double heterojunection laser room temperature working continuously, semiconductor laser
(Semiconductor laser) was successfully excited in 1962, realized in 1970 exporting continuously under room temperature, later through changing
Good, develop double heterogeneous maqting type laser and the laser diode (Laser diode) etc. of stripe structure, be widely used in optical fiber
Communication, CD, laser printer, laser scanner, laser designator (laser pen), be the laser instrument of current volume of production maximum.
But, semiconductor laser traditional on domestic market not only power is low, volume is big, weight is big, laser utilizes
Rate is low, and operate unreliable, power consumption is high, efficiency is low, service life is short.
Summary of the invention
For problem above, this utility model provides a kind of Semiconductor Laser, by utilize lens and unrestrained launch and
Boundling effect, the most energy-conservation expands intensity of illumination to maximization, and other auxiliary equipments are dispelled the heat in time and heat build-up combines, and carry
The efficiency that high laser produces, can carry out the regulation of intensity of illumination according to demand, can effectively solve the problem in background technology.
To achieve these goals, the technical solution adopted in the utility model is as follows: a kind of Semiconductor Laser, including
Base plate, described base plate top connects shell, is provided with vibration damping sheet in described shell, and described vibration damping sheet is directly connected to base plate, institute
Stating the connection of vibration damping sheet top and have laser electric welding layer, described laser electric welding layer top connects TEC refrigerator, and described TEC freezes
Device top has been directly connected to heat conduction bed course, and the connection of described heat conduction bed course top has heat sink, and the described heat sink backlight that is provided with is described
Backlight side is provided with critesistor, and described critesistor side is provided with laser instrument, and described laser instrument connects biography light beam, described
Passing light beam connection and have metal canula, described metal canula is connected by scolding tin ferrule, and described ferrule connects condenser tube ferrule.
As a kind of optimal technical scheme of the present utility model, between described laser instrument and biography light beam, it is provided with the first lens.
As a kind of optimal technical scheme of the present utility model, inside described metal canula, it is provided with isolator and the second lens, institute
Stating isolator to be directly connected to shell, described second lens are located on biography light beam.
As a kind of optimal technical scheme of the present utility model, described backlight and heat sink between angle be 0-150 degree.
The beneficial effects of the utility model:
This utility model, by utilizing lens and unrestrained transmitting and boundling effect, carries out unrestrained transmitting, collection after follow-up amplification to the light beam produced
Close, it is possible to illumination effect in the most energy-conservation total reflection active set by intensity of illumination after unrestrained transmitting so that it is expand maximum to
Changing, other auxiliary equipments are dispelled the heat in time and heat build-up combines, and improve the efficiency that laser produces, can carry out intensity of illumination according to demand
Regulation, application isolator and multiple lens, play the effect strengthening intensity of illumination.
Accompanying drawing explanation
Fig. 1 is this utility model overall structure schematic diagram.
Figure is numbered: 1-base plate；2-vibration damping sheet；3-shell；4-TEC refrigerator；5-laser electric welding layer；6-heat conduction bed course；
7-is heat sink；8-backlight；9-critesistor；10-laser instrument；11-passes light beam；12-the first lens；13-isolator；14-second
Lens；15-metal canula；16-scolding tin；17-ferrule；18-condenser tube ferrule.
Detailed description of the invention
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples,
This utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain this reality
With novel, it is not used to limit this utility model.
Embodiment:
As it is shown in figure 1, a kind of Semiconductor Laser, including base plate 1, described base plate 1 top connects shell 3, described shell
Being provided with vibration damping sheet 2 in 3, described vibration damping sheet 2 is directly connected to base plate 1, and described vibration damping sheet 2 top connects laser electric welding layer 5,
Described laser electric welding layer 5 top connects has TEC refrigerator 4, described TEC refrigerator 4 top to be directly connected to heat conduction bed course 6,
Described heat conduction bed course 6 top connects has heat sink 7, described heat sink 7 to be provided with backlight 8, and described backlight 8 side is provided with temperature-sensitive
Resistance 9, described critesistor 9 side is provided with laser instrument 10, and described laser instrument 10 connects biography light beam 11, described biography light beam
11 connections have metal canula 15, and described metal canula 15 is connected by scolding tin 16 has ferrule 17, described ferrule 17 to connect
There is condenser tube ferrule 18；By utilizing lens and unrestrained transmitting and boundling effect, the most energy-conservation expands intensity of illumination to maximization, its
His auxiliary equipment is dispelled the heat in time and heat build-up combines, and improves the efficiency that laser produces.
On above-described embodiment preferably, it is provided with the first lens 12 between described laser instrument 10 and biography light beam 11, to the light produced
Shu Jinhang is unrestrained to be launched, and gathers after follow-up amplification.
On above-described embodiment preferably, described metal canula 15 is internal is provided with isolator 13 and the second lens 14, described isolation
Device 13 is directly connected to shell 3, and described second lens 14 are located on biography light beam 11, by application isolator 13 and multiple
Mirror, plays the effect strengthening intensity of illumination.
On above-described embodiment preferably, the angle between described backlight 8 and heat sink 7 is 0-150 degree, light as required
Angle according to intensity adjustments backlight 8 carries out optically focused.
Based on above-mentioned, this utility model uses Driven by Solar Energy remote-controlled movement clipping device, using solar energy as power source, and
Use remote control behaviour by utilizing lens and unrestrained transmitting and boundling effect, the light beam produced is carried out unrestrained transmitting, collection after follow-up amplification
Close, it is possible to illumination effect in the most energy-conservation total reflection active set by intensity of illumination after unrestrained transmitting so that it is expand maximum to
Changing, other auxiliary equipments are dispelled the heat in time and heat build-up combines, and improve the efficiency that laser produces, can carry out intensity of illumination according to demand
Regulation, application isolator and multiple lens, play the effect strengthening intensity of illumination.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all in this practicality
Any amendment, equivalent and the improvement etc. made within novel spirit and principle, should be included in protection of the present utility model
Within the scope of.
Claims (4)
1. a Semiconductor Laser, including base plate (1), described base plate (1) top connects shell (3), described shell (3)
Inside being provided with vibration damping sheet (2), described vibration damping sheet (2) is directly connected to base plate (1), it is characterised in that described vibration damping sheet (2)
Top connects laser electric welding layer (5), and described laser electric welding layer (5) top connects TEC refrigerator (4), described TEC
Refrigerator (4) top has been directly connected to heat conduction bed course (6), and described heat conduction bed course (6) top connects to be had heat sink (7), described
Heat sink (7) are provided with backlight (8), and described backlight (8) side is provided with critesistor (9), described critesistor (9)
Side is provided with laser instrument (10), and described laser instrument (10) connects biography light beam (11), and described biography light beam (11) connects gold
Belonging to sleeve pipe (15), described metal canula (15) is connected by scolding tin (16) ferrule (17), described ferrule (17)
Connect and have condenser tube ferrule (18).
A kind of Semiconductor Laser the most according to claim 1, it is characterised in that: described laser instrument (10) and biography light beam
(11) the first lens (12) it are provided with between.
A kind of Semiconductor Laser the most according to claim 1, it is characterised in that: described metal canula (15) is internal to be set
Having isolator (13) and the second lens (14), described isolator (13) is directly connected to shell (3), described second lens
(14) it is located in biography light beam (11).
A kind of Semiconductor Laser the most according to claim 1, it is characterised in that: described backlight (8) and heat sink (7)
Between angle be 0-150 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620244597.9U CN205488993U (en) | 2016-03-25 | 2016-03-25 | Novel semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620244597.9U CN205488993U (en) | 2016-03-25 | 2016-03-25 | Novel semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205488993U true CN205488993U (en) | 2016-08-17 |
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ID=56647138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620244597.9U Expired - Fee Related CN205488993U (en) | 2016-03-25 | 2016-03-25 | Novel semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205488993U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159672A (en) * | 2016-08-30 | 2016-11-23 | 中国科学院半导体研究所 | Based on the narrow line wide cavity laser structure that optical fiber lens and grating are integrated |
| CN106229799A (en) * | 2016-09-13 | 2016-12-14 | 深圳大学 | A kind of miniature laser system |
-
2016
- 2016-03-25 CN CN201620244597.9U patent/CN205488993U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159672A (en) * | 2016-08-30 | 2016-11-23 | 中国科学院半导体研究所 | Based on the narrow line wide cavity laser structure that optical fiber lens and grating are integrated |
| CN106229799A (en) * | 2016-09-13 | 2016-12-14 | 深圳大学 | A kind of miniature laser system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160817 Termination date: 20190325 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |