CN102662240A - Multiple-light-emitting-unit semiconductor laser module coupling device with indication function - Google Patents
Multiple-light-emitting-unit semiconductor laser module coupling device with indication function Download PDFInfo
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- CN102662240A CN102662240A CN2012101402760A CN201210140276A CN102662240A CN 102662240 A CN102662240 A CN 102662240A CN 2012101402760 A CN2012101402760 A CN 2012101402760A CN 201210140276 A CN201210140276 A CN 201210140276A CN 102662240 A CN102662240 A CN 102662240A
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Abstract
The invention provides a multiple-light-emitting-unit semiconductor laser module coupling device with indication function. The multiple-light-emitting-unit semiconductor laser module coupling device comprises a plurality of semiconductor laser modules which are fixedly arranged on a circuit board and an indication module, wherein the indication module adopts a visible light semiconductor laser chip; the output of each light-emitting unit in each semiconductor laser module group respectively accesses fiber jumper which in one-to-one correspondence to the output of each light-emitting unit; the output of the indication module further accesses an individual fiber jumper; and all the fiber jumpers form a combined output in a physical collecting manner. With the adoption of the device provided by the invention, the laser module does not need to perform complex beam shaping, so that the high-power output and the uniform light spot can be realized in lower cost and simple configuration.
Description
Technical field
The invention belongs to laser instrument and make the field, relate to a kind of multi-illuminating unit semiconductor laser module coupling device.
Background technology
Semiconductor laser is claimed laser diode (LD) again.Get into the eighties; People have absorbed the newest fruits of semiconductor physics development; Quantum well (QW) and strained quantum well novelty structures such as (SL-QW) have been adopted; Introduce index modulation Bragg transmitter and enhanced modulation Bragg transmitter state-of-the-art technology, also developed crystal technique new technologies such as MBE, MOCVD and CBE simultaneously, made new epitaxial growth technology can accurately control crystal growth; Reach the precision of atomic layer level thickness, grow high-quality quantum well and strained quantum trap material.So, the LD that produces, its threshold current significantly descends, and conversion efficiency increases substantially, and output power is doubled and redoubled, and also obviously extend serviceable life.
Semiconductor laser and fiber coupling system thereof obtain application more and more widely in fields such as industry, medical treatment, military affairs.In numerous application, volume is little, and is in light weight, and the coupling module of the semiconductor laser that cost is low becomes the focal point in market and the focus of various countries' research.
At present in order to pursue the semiconductor laser coupling module that high power and high brightness are exported, normally add corresponding beam shaping system, as light beam is cut at semiconductor laser (LD) front end; Rotation is reset etc., laser beam is compressed to the hot spot output (Niu Gang that needs; Fanzhong's dimension, Wang Peifeng etc., " high-power semiconductor laser array single fiber coupling technique "; The semiconductor journal, 2007,28 (10): 1607-1610); Make that like this coupling module volume is big, structure and complex process, cost is high.Both at home and abroad Related product is a lot, but is mostly the product developed on two kinds of chip basis, all has certain shortcoming:
(1) single tube (Single Emitter) product, this product has only a luminous point, can accomplish 808nm, 50 μ m, the laser output of 5W, although the optical fiber core diameter is very little, because the restriction of power, brightness is not very high.
(2) single Bar product, the luminous point of this product are generally (as 47,62) more than 19 or 19; To this Bar bar, the beam shaping modes of using cutting, upset, resetting, focus on realize optical fiber coupling output more, and this series products can reach very high power; But owing to adopted complicated optical system; Cost is very high, and the output optical fibre core diameter can not accomplish very little, the difficult purpose that reaches high brightness output.
(3) many Bar bar product, this series products have absolute advantage aspect power, but in the optical fiber that is difficult to make laser coupled advance little core diameter, this has just determined that the brightness of this series products is not high.
In sum; In traditional semiconductor laser optical fiber coupling scheme; Laser chip generally adopts single tube (Single Emitter) or single Bar, and optical shaping system (mainly being Bar bar class) then often need carry out complicated optics cutting, rotation, reset.Conventional art has following shortcoming:
(1) the optical fiber coupling cost of products based on the Bar bar is high, and the drive current of requirement is big.Owing to added complicated optical system, make the entire product cost improve, reduced such competitiveness of product in market, this series products often needs very high drive current simultaneously, and this has seriously limited the application of product.
(2) power and brightness are on the low side.For single tube optical fiber coupling product, because the restriction of its power is difficult to make high-power, high-brightness laser device product.And for Bar bar optical fiber coupling product, owing to be difficult to light beam coupling is advanced in the optical fiber of little core diameter, so brightness is not high yet.
(3) complex process.Common Bar bar optical fiber coupling product adopts complicated optical system usually; To reach the purpose of little core optical fibers coupling output; This optical system has comprised complicated beam shaping lens, in actual production, and lens of every increase; Technology difficulty increases greatly, the loss that also brings power simultaneously.
(4) complex structure.Therefore in the conventional art,, no matter be single tube class or Bar bar series products, all adopted complicated optical shaping system, make the complex structure of coupling module for the beam quality that obtains, bulky.
Summary of the invention
The objective of the invention is to overcome the defective of above-mentioned prior art; A kind of multi-illuminating unit semiconductor laser module coupling device with indication is provided; Make laser module need not to carry out complicated beam shaping, realized that with lower cost, easy being provided with high power output, hot spot are even.
The objective of the invention is to solve through following technical scheme:
A kind of multi-illuminating unit semiconductor laser module coupling device with indication; Its special character is: be included in a plurality of semiconductor laser modules and an indicating module of fixedly installing on the circuit board, said indicating module adopts the visible light semiconductor laser chip; The output of each luminescence unit in each semiconductor laser module group inserts with it optical patchcord one to one respectively, and the output of indicating module also inserts independent optical patchcord; All optical patchcords form with the physics ethod of remittance and close bundle output.
The above-mentioned physics ethod of remittance can be: all optical patchcords are closely arranged or are bundled along outbound course.
The above-mentioned physics ethod of remittance also can be: the common optical patchcord that inserts a larger aperture of the output terminal of all optical patchcords.
Above-mentioned semiconductor laser module adopts single tube chip, crust bar chip, or is composed in parallel by a plurality of single tube chips.
In above-mentioned a plurality of semiconductor laser module, have at least the output wavelength of two semiconductor laser modules different; For the semiconductor laser module that composes in parallel by a plurality of single tube chips, wherein have at least the output wavelength of two single tube chips different.Like this, adopt the input source of multi-wavelength can avoid interference, further improved power output.
What above-mentioned all optical patchcords formed closes the area of beam for circular.Like this, can close the Shu Chengyuan hot spot.
Above-mentioned semiconductor laser module is preferably arranged side by side or is become stepped and is arranged on the circuit board, and the Laser emission direction of each semiconductor laser module is consistent.
Above-mentioned a plurality of semiconductor laser module can adopt the electric connection mode of series connection successively.
The present invention has following beneficial effect:
(1) cost is low.The present invention has saved complicated beam shaping system, provides cost savings greatly.
(2) circuit is reliable, power is high, and hot spot is even.Compare with the conventional semiconductor laser product; Power of the present invention significantly improves; The present invention has saved processes such as the needed beam reversal of common Bar bar beam shaping system, cutting, rearrangement, and a plurality of semiconductor laser modules are coupled outside housing, and technology is simple, easy for installation.
(3) can realize indication to invisible light, because of having added indicating module in the system, indicating module is connected with a plurality of semiconductor laser modules, can determine the laser spot position that a plurality of semiconductor laser modules are launched according to pilot light.
(4) can realize multi-wavelength output, and can further improve output power with this.
Description of drawings
Fig. 1 is the synoptic diagram of the embodiment of the invention one;
Fig. 2 is the synoptic diagram of the embodiment of the invention two;
Fig. 3 is the synoptic diagram of the embodiment of the invention three.
Wherein: 1,2,3,7,8,10,11 is semiconductor laser module; 4 is indicating module; 5 is optical patchcord; 6 is luminescence unit; 9 is the optical patchcord of larger aperture; 12 is the optical patchcord of larger aperture.
Embodiment
The preparation method of multi-illuminating unit semiconductor laser module coupling device of the present invention is following: optical patchcord is installed at each the luminescence unit place at each semiconductor laser module, and the light that each luminescence unit is sent passes through pairing optical patchcord; With many independently optical patchcord binding back output laser or many independently optical patchcord insert and close output laser in bundle back in the same optical patchcord.
The corresponding optical patchcord of each luminescence unit of the present invention; The laser that luminescence unit sends compresses back output through optical patchcord; Because the emergent light of the luminescence unit of indicating module is a visible light, therefore can judge the position of laser output through indicating module.
Preferred plan of the present invention is to adopt a plurality of semiconductor laser modules series connection, and luminescence unit adds up to three, and seven or nineteen so just can be realized easily arranging closing and restraint formation circular light spot, best results.
The present invention is mainly used in high-power semiconductor laser, can produce the laser instrument of multi-wavelength, multiple power according to the difference of selected chip.
Be described in detail the present invention below in conjunction with accompanying drawing and practical implementation instance:
Embodiment one
As shown in Figure 1; The multi-illuminating unit semiconductor laser module coupling device comprises a plurality of semiconductor laser modules; Comprise semiconductor laser module 1, semiconductor laser module 2, semiconductor laser module 3 and semiconductor laser module 4 and indicating module 5; Semiconductor laser module 1 is the crust bar chip that 6 luminescence units are arranged, and semiconductor laser module 2 is crust bar chips that 3 luminescence units are arranged, and semiconductor laser module 3 is crust bar chips that 5 luminescence units are arranged; Indicating module 4 is visible light chips, can select red light chips, green glow chip or blue chip for use.
The corresponding optical patchcord of installing at each luminescence unit place of each semiconductor laser module group, the corresponding optical patchcord of installing of the luminescence unit of indicating module.Optical patchcord 5 is installed at each luminous point 6 place at semiconductor laser module 1, at each luminescence unit 6 place of semiconductor laser module 2 optical patchcord 5 is installed, and at the luminescence unit place of semiconductor laser module 4 optical patchcord 5 is installed.All optical patchcords are closely arranged or bundle to form close bundle.
Embodiment two
As shown in Figure 2; The multi-illuminating unit semiconductor laser module coupling device comprises semiconductor laser module 7, semiconductor laser module 8 and indicating module 4; Semiconductor laser module 7, semiconductor laser module 8 and indicating module 4 are arranged in parallel; What semiconductor laser module 7 was selected for use is that wavelength is the mini bar chip that 830nm has 3 luminescence units; What semiconductor laser module 8 was selected for use is that wavelength is the crust bar chip that 5 luminescence units are arranged of 980nm, and it is the ruddiness single tube chip of 635nm that indicating module 4 is selected wavelength for use.
The corresponding optical fiber of installing jumps 5 at each luminescence unit 6 place of semiconductor laser module 7, corresponding optical patchcord 5 lines of installing at each luminescence unit 6 place of semiconductor laser module 8, the corresponding optical patchcord 5 of installing of the luminescence unit of indicating module 4.Then with every independently optical patchcord 5 close and restraint numerical aperture than in the bigger optical patchcord 9 of optical patchcord 5, through optical patchcord 9 output laser.
Embodiment three
As shown in Figure 3, the multi-illuminating unit semiconductor laser module coupling device is selected 3 semiconductor laser modules 10 for use, and wavelength is the single-shot light unit chip of 808nm; Select 3 semiconductor laser modules 11 for use, wavelength is the single-shot light unit chip of 976nm; It is the blue chip of 445nm that while indicating module 4 is selected wavelength for use.The corresponding optical patchcord 5 of installing at the luminescence unit place of semiconductor laser module 10, semiconductor laser module 11; Then with every independently optical patchcord 5 close restraint numerical aperture than optical patchcord 5 bigger optical patchcord 12 in, through optical patchcord 12 output laser.
Claims (8)
1. multi-illuminating unit semiconductor laser module coupling device with indication; It is characterized in that: be included in a plurality of semiconductor laser modules and an indicating module of fixedly installing on the circuit board, said indicating module adopts the visible light semiconductor laser chip; The output of each luminescence unit in each semiconductor laser module group inserts with it optical patchcord one to one respectively, and the output of indicating module also inserts independent optical patchcord; All optical patchcords form with the physics ethod of remittance and close bundle output.
2. multi-illuminating unit semiconductor laser module coupling device according to claim 1 is characterized in that: all optical patchcords are closely arranged or are bundled along outbound course.
3. multi-illuminating unit semiconductor laser module coupling device according to claim 1 is characterized in that: the common optical patchcord that inserts a larger aperture of the output terminal of all optical patchcords.
4. according to claim 2 or 3 described multi-illuminating unit semiconductor laser module coupling devices, it is characterized in that: described semiconductor laser module adopts single tube chip, crust bar chip, or is composed in parallel by a plurality of single tube chips.
5. multi-illuminating unit semiconductor laser module coupling device according to claim 4 is characterized in that: in a plurality of semiconductor laser modules, have at least the output wavelength of two semiconductor laser modules different; For the semiconductor laser module that composes in parallel by a plurality of single tube chips, wherein have at least the output wavelength of two single tube chips different.
6. multi-illuminating unit semiconductor laser module coupling device according to claim 5 is characterized in that: what all optical patchcords formed closes the area of beam for circular.
7. multi-illuminating unit semiconductor laser module coupling device according to claim 6 is characterized in that: semiconductor laser module is arranged side by side or is become stepped and is arranged on the circuit board, and the Laser emission direction of each semiconductor laser module is consistent.
8. multi-illuminating unit semiconductor laser module coupling device according to claim 7 is characterized in that: a plurality of semiconductor laser modules adopt the electric connection mode of series connection successively.
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| CN2012101402760A CN102662240A (en) | 2012-05-08 | 2012-05-08 | Multiple-light-emitting-unit semiconductor laser module coupling device with indication function |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050889A (en) * | 2012-11-22 | 2013-04-17 | 北京工业大学 | Semiconductor laser chip structure with indicating light and preparation method thereof |
| CN103268016A (en) * | 2013-05-31 | 2013-08-28 | 西安炬光科技有限公司 | Optical fiber coupling semiconductor laser unit homogenizing method and device |
| CN111969416A (en) * | 2020-08-28 | 2020-11-20 | 南京镭芯光电有限公司 | Semiconductor laser device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101144876A (en) * | 2006-09-13 | 2008-03-19 | 中国科学院光电研究院 | Laser homogenizing coupler device for laser display |
| CN201204381Y (en) * | 2008-05-09 | 2009-03-04 | 北京工业大学 | Combination device for semiconductor laser |
| CN101902017A (en) * | 2010-07-28 | 2010-12-01 | 西安炬光科技有限公司 | Multi-illuminating unit semiconductor laser module and preparation method thereof |
| CN201821002U (en) * | 2010-07-28 | 2011-05-04 | 西安炬光科技有限公司 | Semiconductor laser module for multi-luminescent unit |
| CN202600260U (en) * | 2012-05-08 | 2012-12-12 | 西安炬光科技有限公司 | Multi-light emitting unit semiconductor laser module coupling device with indicator |
-
2012
- 2012-05-08 CN CN2012101402760A patent/CN102662240A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101144876A (en) * | 2006-09-13 | 2008-03-19 | 中国科学院光电研究院 | Laser homogenizing coupler device for laser display |
| CN201204381Y (en) * | 2008-05-09 | 2009-03-04 | 北京工业大学 | Combination device for semiconductor laser |
| CN101902017A (en) * | 2010-07-28 | 2010-12-01 | 西安炬光科技有限公司 | Multi-illuminating unit semiconductor laser module and preparation method thereof |
| CN201821002U (en) * | 2010-07-28 | 2011-05-04 | 西安炬光科技有限公司 | Semiconductor laser module for multi-luminescent unit |
| CN202600260U (en) * | 2012-05-08 | 2012-12-12 | 西安炬光科技有限公司 | Multi-light emitting unit semiconductor laser module coupling device with indicator |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050889A (en) * | 2012-11-22 | 2013-04-17 | 北京工业大学 | Semiconductor laser chip structure with indicating light and preparation method thereof |
| CN103050889B (en) * | 2012-11-22 | 2015-06-17 | 北京工业大学 | Semiconductor laser chip structure with indicating light and preparation method thereof |
| CN103268016A (en) * | 2013-05-31 | 2013-08-28 | 西安炬光科技有限公司 | Optical fiber coupling semiconductor laser unit homogenizing method and device |
| CN103268016B (en) * | 2013-05-31 | 2016-05-04 | 西安炬光科技有限公司 | A kind of fiber coupled laser diode homogenizing method and device |
| CN111969416A (en) * | 2020-08-28 | 2020-11-20 | 南京镭芯光电有限公司 | Semiconductor laser device |
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Application publication date: 20120912 |