CN103050889A

CN103050889A - Semiconductor laser chip structure with indicating light and preparation method thereof

Info

Publication number: CN103050889A
Application number: CN2012104793412A
Authority: CN
Inventors: 尧舜; 王智勇; 贾冠男
Original assignee: Beijing University of Technology
Current assignee: China Semiconductor Technology Co., Ltd.
Priority date: 2012-11-22
Filing date: 2012-11-22
Publication date: 2013-04-17
Anticipated expiration: 2032-11-22
Also published as: CN103050889B

Abstract

The invention discloses a semiconductor laser chip structure with indicating light and a preparation method thereof and belongs to the technical field of semiconductor laser. In the structure, a light emitting unit of which a spectrum comprises visible light and a light emitting unit of which a spectrum only comprises invisible light are integrated onto the same semiconductor laser chip, i.e., one semiconductor laser chip not only is provided with the light emitting unit of which the spectrum only comprises the invisible light, but also is provided with the light emitting unit of which the spectrum comprises the visible light. The visible light emitted by the light emitting unit of which the spectrum comprises the visible light can be used as the indicating light for laser processing, so that a semiconductor laser is more convenient to apply in the laser processing.

Description

A kind of semiconductor laser chip structure with pilot light and preparation method thereof

Technical field

The present invention relates to a kind of semiconductor laser chip structure with pilot light and preparation method thereof, belong to the semiconductor laser technique field.

Background technology

Volume is little, lightweight, the photoelectric conversion efficiency advantages of higher because semiconductor laser has, and its application in field of laser processing is more and more extensive.In laser processing, used semiconductor laser mostly is invisible light.Therefore, could process with laser after must finishing focusing with visible pilot light first.

The most frequently used method that obtains pilot light is to add a pilot light generator and the light same light path that pilot light and semiconductor laser are sent in semiconductor laser at present.But in practice, the method has some shortcomings.For example, pilot light focusing is difficulty relatively, and the focus that the focus of pilot light and semiconductor laser send light does not often overlap etc.This brings many inconvenience for the application of semiconductor laser in laser processing.

Summary of the invention

The invention provides a kind of semiconductor laser chip structure with pilot light and preparation method thereof, be integrated on the same semiconductor laser chip comprising the luminescence unit that only comprises invisible light in the luminescence unit of visible light and the spectrum in the spectrum.Namely on a semiconductor laser chip, only comprise the luminescence unit of invisible light in the existing spectrum, the luminescence unit that comprises visible light in the spectrum is also arranged.The desirable acute pyogenic infection of finger tip of luminescence unit that comprises visible light in the spectrum is shown optical generator, send visible light as the pilot light of laser processing, overcome when semiconductor laser is used for laser processing and must produce the shortcoming that pilot light brings with the pilot light generator, so that the utilization of semiconductor laser in laser processing is convenient.

For obtaining said structure, the present invention has taked to be prepared as follows method: only comprise in spectrum on the basis of semiconductor laser chip structure of invisible light, select one or more not luminescence units zone, employing diauxic growth technology comprises the epitaxial structure of visible light in these region growing spectrum, obtain comprising in one or more spectrum the luminescence unit of visible light.

The preparation process of semiconductor laser chip with this kind structure is as follows:

1) adopts the method for metallo-organic compound chemical meteorology deposition (MOCVD), in Grown spectrum, only comprise the epitaxial loayer of invisible light, shown in Fig. 2 (1);

2) select one or more not luminescence units, adopt the standard semiconductor photoetching process, remove these regional epitaxial loayers, shown in Fig. 2 (2);

3) at epitaxial loayer and remove zone growth one deck SiO of epitaxial loayer ₂, shown in Fig. 2 (3);

4) adopt the standard wet-etching technique, will remove the SiO on the zone of epitaxial loayer ₂Remove, shown in Fig. 2 (4);

5) method of employing metallo-organic compound chemical meteorology deposition (MOCVD) is at SiO ₂And remove the epitaxial loayer that comprises visible light on the zone of epitaxial loayer in the growth spectrum, shown in Fig. 5 (5);

6) adopt the standard wet-etching technique, remove all SiO on the chip ₂Layer and SiO ₂The epitaxial loayer that comprises visible light in the spectrum on layer top is shown in Fig. 2 (6);

7) finish the front processing steps of semiconductor laser chips such as corrosion V-type groove, making metallic electrode, obtain a kind of luminescence unit that comprises visible light on it in the existing spectrum, the luminescence unit that only comprises invisible light in the spectrum is arranged again, and in parallel, the optoisolated semiconductor laser chip of electricity between each luminescence unit.

The present invention is applicable to all semiconductor laser chips take the GaAs material as substrate.

Description of drawings

Fig. 1 is with the semiconductor laser chip of pilot light

Fig. 2 is with the semiconductor laser chip preparation process schematic diagram of pilot light

Embodiment:

In order to further specify structure of the present invention, existing the present invention will be further described in conjunction with the embodiments.

At first, adopt the method for metallo-organic compound chemical meteorology deposition (MOCVD), the centre wavelength that only comprises invisible light in GaAs Grown spectrum is the epitaxial loayer of 980nm.980nm epitaxial layer structure such as table 1:

Table 1 980nm epitaxial layer structure

Then select a not luminescence unit, adopt the standard semiconductor photoetching process, remove these regional epitaxial loayers.

Next at epitaxial loayer and remove zone growth one deck SiO of epitaxial loayer ₂After finishing, will remove the SiO on the zone of epitaxial loayer ₂Remove.

Adopt again the method for metallo-organic compound chemical meteorology deposition (MOCVD), at SiO ₂And to remove the centre wavelength that comprises visible light on the zone of epitaxial loayer in the growth spectrum be the epitaxial loayer of 808nm.808nm epitaxial layer structure such as table 2.

Table 2 808nm epitaxial layer structure

Then adopt the standard wet-etching technique, remove all SiO on the chip ₂Layer and SiO ₂The epitaxial loayer that comprises visible light in the spectrum on layer top.Finish at last the front processing steps of semiconductor laser chips such as corrosion V-type groove, making metallic electrode, obtain a kind of luminescence unit that comprises visible light on it in the existing spectrum, the luminescence unit that only comprises invisible light in the spectrum is arranged again, and in parallel, the optoisolated semiconductor laser chip of electricity between each luminescence unit.

Claims

1. semiconductor laser chip structure with pilot light, it is characterized in that: be integrated on the same semiconductor laser chip comprising the luminescence unit that only comprises invisible light in the luminescence unit of visible light and the spectrum in the spectrum, namely on a semiconductor laser chip, only comprise the luminescence unit of invisible light in the existing spectrum, the luminescence unit that comprises visible light in the spectrum is also arranged.

2. the preparation method of a kind of semiconductor laser chip structure with pilot light according to claim 1 is characterized in that may further comprise the steps:

1) adopts the method for metallo-organic compound chemical meteorology deposition, in Grown spectrum, only comprise the epitaxial loayer of invisible light;

2) select one or more not luminescence units, adopt the standard semiconductor photoetching process, remove these regional epitaxial loayers;

3) at epitaxial loayer and remove zone growth one deck SiO of epitaxial loayer ₂

4) adopt the standard wet-etching technique, will remove the SiO on the zone of epitaxial loayer ₂Remove;

5) method of employing metallo-organic compound chemical meteorology deposition is at SiO ₂And remove the epitaxial loayer that comprises visible light on the zone of epitaxial loayer in the growth spectrum;

6) adopt the standard wet-etching technique, remove all SiO on the chip ₂Layer and SiO ₂The epitaxial loayer that comprises visible light in the spectrum on layer top;

7) finish and comprise corrosion V-type groove, make processing step before these semiconductor laser chips of metallic electrode, obtain a kind of luminescence unit that comprises visible light on it in the existing spectrum, the luminescence unit that only comprises invisible light in the spectrum is arranged again, and in parallel, the optoisolated semiconductor laser chip structure with pilot light of electricity between each luminescence unit.

3. described method according to claim 2 is characterized in that: the material take GaAs substrate.