CN105598594A - Laser separation method for SiC chip of compound structure - Google Patents

Laser separation method for SiC chip of compound structure Download PDF

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Publication number
CN105598594A
CN105598594A CN201510955804.1A CN201510955804A CN105598594A CN 105598594 A CN105598594 A CN 105598594A CN 201510955804 A CN201510955804 A CN 201510955804A CN 105598594 A CN105598594 A CN 105598594A
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Prior art keywords
sic
epitaxial wafer
laser
composite construction
layer
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CN201510955804.1A
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Chinese (zh)
Inventor
刘昊
陈刚
柏松
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CETC 55 Research Institute
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CETC 55 Research Institute
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Priority to CN201510955804.1A priority Critical patent/CN105598594A/en
Publication of CN105598594A publication Critical patent/CN105598594A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)

Abstract

The invention discloses a laser separation method for a SiC chip of a compound structure. A SiC wafer of the multi-layer compound structure can be safely cut without damaging a medium on the front face and metal on the back face of a SiC epitaxial wafer. The yield is greatly increased, the cutting efficiency is greatly improved, and SiC production cost is reduced.

Description

A kind of separation by laser method of composite construction SiC chip
Technical field
The present invention relates to the manufacture field of semiconductor devices, particularly relate to a kind of laser of composite construction SiC chipSeparation method.
Background technology
It is comparable that the application semi-conductive broad stopband of SiC and high-temperature stability have or not it aspect High temperature semiconductor deviceThe advantage of intending. Adopt SiC material to make the multiple devices such as MESFET, MOSFET, JEFT, BJT,Their operating temperature can reach more than 500 DEG C, and the use in the electronic system of extreme environment can be provided.
SiC is the ideal material of the HIGH-POWERED MICROWAVES amplifier of 1-10GHZ scope, and LED solid state lighting is at presentThe main application fields of SiC device, is not replace at the application SiC of space flight aerospace device, can resistThe x radiation x that space is powerful can normally be worked simultaneously under strong electromagnetic effect.
This material of SiC itself is very hard, is a kind of material of very difficult cutting. Must select with emery wheel cuttingThe equipment that spindle power is larger, the selection of cutter is also worthy of careful study very much, and speed maximum can only reach 4mm/s,Efficiency for little chip is very low, and the SiC chip cutting out with emery wheel can form a V angle, exists like thisIn the process of later stage encapsulation, have certain size risk. Can shorten cutting speed and separate with laser, the highestSpeed can reach 600mm/s, and the size of scribe line is compared emery wheel and shortened to original 1/2. Identical chips chiQuantity on very little lower disk can improve 30%-50%, thereby reduces costs. But separation by laser of the prior artThe production efficiency of method is lower, and the yields of acquisition is not high yet.
Summary of the invention
Goal of the invention: the object of this invention is to provide the composite construction SiC core that a kind of yields is high, production efficiency is highThe separation by laser method of sheet.
Technical scheme: for reaching this object, the present invention by the following technical solutions:
The separation by laser method of a kind of composite construction SiC chip of the present invention, comprises following step:
S1: complete the preparation of composite construction SiC disk on SiC epitaxial wafer;
S2: the thickness of measuring composite construction SiC disk Cutting Road region;
S3: composite construction SiC disk is attached on scribing film, and scribing film is located on cutting horse;
S4: the gross thickness of measuring composite construction SiC disk Cutting Road region and scribing film;
S5: form between the bottom metal at the SiC epitaxial wafer back side and the SiC epitaxial wafer back side by laser scanningThe one SD layer;
S6: form the 2nd SD at 1/4 place, the SiC epitaxial wafer inner distance SiC epitaxial wafer back side by laser scanningLayer;
S7: form Three S's D at 1/3 place, the SiC epitaxial wafer inner distance SiC epitaxial wafer back side by laser scanningLayer;
S8: form the 4th SD at 1/2 place, the SiC epitaxial wafer inner distance SiC epitaxial wafer back side by laser scanningLayer;
S9: form the 5th SD at 3/4 place, the SiC epitaxial wafer inner distance SiC epitaxial wafer back side by laser scanningLayer;
S10: by laser scanning shape between the bottom medium in SiC epitaxial wafer front and SiC epitaxial wafer frontBecome the 6th SD layer;
S11: the composite construction SiC disk after complete to whole scanning carries out sliver, forms composite construction SiC chip.
Further, described scribing film is blue film or UV film.
Further, in described step S5, the speed of laser scanning is 100mm/s-400mm/s, laser power decayModule angle is 82 °-105 °, and the distance between a SD layer and SiC epitaxial wafer (103) front is300um-360um。
Further, in described step S6, the speed of laser scanning is 200mm/s-300mm/s, laser power decayModule angle is 82 °-100 °, and the distance between the 2nd SD layer and SiC epitaxial wafer (103) front is270um-300um。
Further, in described step S7, the speed of laser scanning is 200mm/s-250mm/s, laser power decayModule angle is 82 °-95 °, and the distance between Three S's D layer and SiC epitaxial wafer (103) front is 240um-270um.
Further, in described step S8, the speed of laser scanning is 150mm/s-200mm/s, laser power decayModule angle is 82 °-90 °, and the distance between the 4th SD layer and SiC epitaxial wafer (103) front is 180um-240um.
Further, in described step S9, the speed of laser scanning is 100mm/s-150mm/s, laser power decayModule angle is 82 °-87 °, and the distance between the 5th SD layer and SiC epitaxial wafer (103) front is 90um-180um.
Further, in described step S10, the speed of laser scanning is 100mm/s-150mm/s, and laser power declinesSubtracting module angle is 82 °-85 °, and the distance between the 6th SD layer and SiC epitaxial wafer (103) front is 4um-90um.
Further, the sliver in described step S11 carries out in scribe line, and the design width of scribe line is that laser is sweptRetouch rear SiC epitaxial wafer loss partial width 70～100 times.
Beneficial effect: method of the present invention can realize the cutting of multi-layer compound structure SiC disk very safely, andAnd can not destroy the medium in SiC epitaxial wafer front and the metal at the back side, greatly improve yields and cutting efficiency,Reduce SiC production cost.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention while proceeding to step S5;
Fig. 2 is the structural representation of the present invention while proceeding to step S6;
Fig. 3 is the structural representation of the present invention while proceeding to step S7;
Fig. 4 is the structural representation of the present invention while proceeding to step S8;
Fig. 5 is the structural representation of the present invention while proceeding to step S9;
Fig. 6 is the structural representation of the present invention while proceeding to step S10;
Fig. 7 is the structural representation after step S11 of the present invention completes.
Detailed description of the invention
Below in conjunction with detailed description of the invention, technical scheme of the present invention is further introduced.
A kind of separation by laser method that the invention discloses composite construction SiC chip, comprises following step:
S1: on SiC epitaxial wafer 103, complete the preparation of composite construction SiC disk, composite construction SiC diskGross thickness is 210～410 μ m;
S2: the thickness of measuring composite construction SiC disk Cutting Road region;
S3: composite construction SiC disk is attached on scribing film, and scribing film is located on cutting horse;
S4: the gross thickness of measuring composite construction SiC disk Cutting Road region and scribing film;
S5: bottom metal 104 and SiC epitaxial wafer 103 by laser scanning at SiC epitaxial wafer 103 back sidesBetween the back side, form a SD layer; As shown in Figure 1, SiC epitaxial wafer 103 back sides successively sputter have bottom goldGenus 104, second layer metal 105, three-layer metal 106 and the 4th layer of metal 107, SiC epitaxial wafer 103 frontsSputter has bottom medium 102 and second layer medium 101 successively; Wherein, bottom medium 102 and the second layer are situated betweenMatter 101 is that using plasma strengthens chemical gas-phase deposition method (PECVD) or inductively coupled plasma increasesSilica or silicon nitride that extensive chemical gas-phase deposition method (ICP-PECVD) forms, each dielectric layer totalThickness is 0.2～0.9 μ m; And bottom metal 104, second layer metal 105, three-layer metal 106 and the 4thLayer metal 107, except adopting sputter mode, can also adopt electron-beam evaporation mode to form, each metal levelGross thickness be 6～9 μ m;
S6: form at 1/4 place, SiC epitaxial wafer 103 inner distance SiC epitaxial wafer 103 back side by laser scanningThe 2nd SD layer, Fig. 2 shows the position of this laser scanning;
S7: form at 1/3 place, SiC epitaxial wafer 103 inner distance SiC epitaxial wafer 103 back side by laser scanningThree S's D layer, Fig. 3 shows the position of this laser scanning;
S8: form at 1/2 place, SiC epitaxial wafer 103 inner distance SiC epitaxial wafer 103 back side by laser scanningThe 4th SD layer, Fig. 4 shows the position of this laser scanning;
S9: form at 3/4 place, SiC epitaxial wafer 103 inner distance SiC epitaxial wafer 103 back side by laser scanningThe 5th SD layer, Fig. 5 shows the position of this laser scanning;
S10: bottom medium 102 and SiC epitaxial wafer 103 by laser scanning in SiC epitaxial wafer 103 frontsBetween front, form the 6th SD layer, Fig. 6 shows the position of this laser scanning;
S11: the composite construction SiC disk after complete to whole scanning carries out sliver, the composite construction SiC that sliver is completeChip as shown in Figure 7.
Wherein, scribing film is blue film or UV film. " SD " in SD layer is the abbreviation of " StealthDicing ".
In step S5, the speed of laser scanning is 100mm/s-400mm/s, and laser power decay module angle is82 °-105 °, the distance between a SD layer and SiC epitaxial wafer (103) front is 300um-360um.
In step S6, the speed of laser scanning is 200mm/s-300mm/s, and laser power decay module angle is82 °-100 °, the distance between the 2nd SD layer and SiC epitaxial wafer (103) front is 270um-300um.
In step S7, the speed of laser scanning is 200mm/s-250mm/s, and laser power decay module angle is82 °-95 °, the distance between Three S's D layer and SiC epitaxial wafer (103) front is 240um-270um.
In step S8, the speed of laser scanning is 150mm/s-200mm/s, and laser power decay module angle is82 °-90 °, the distance between the 4th SD layer and SiC epitaxial wafer (103) front is 180um-240um.
In step S9, the speed of laser scanning is 100mm/s-150mm/s, and laser power decay module angle is82 °-87 °, the distance between the 5th SD layer and SiC epitaxial wafer (103) front is 90um-180um.
In step S10, the speed of laser scanning is 100mm/s-150mm/s, and laser power decay module angle is82 °-85 °, the distance between the 6th SD layer and SiC epitaxial wafer (103) front is 4um-90um.
Sliver in step S11 carries out in scribe line, and the design width of scribe line is SiC extension after laser scanningSheet 103 loses 70～100 times of partial width.
Sharp light wavelength in step S5 to S10 is 532nm-1064nm, and frequency is 100KHZ-1000KHZ.

Claims (9)

1. a separation by laser method for composite construction SiC chip, is characterized in that: comprise following step:
S1: complete the preparation of composite construction SiC disk on SiC epitaxial wafer (103);
S2: the thickness of measuring composite construction SiC disk Cutting Road region;
S3: composite construction SiC disk is attached on scribing film, and scribing film is located on cutting horse;
S4: the gross thickness of measuring composite construction SiC disk Cutting Road region and scribing film;
S5: bottom metal (104) and SiC extension by laser scanning at SiC epitaxial wafer (103) back sideSheet (103) forms a SD layer between the back side;
S6: by laser scanning at SiC epitaxial wafer (103) inner distance SiC epitaxial wafer (103) back side 1/4Place forms the 2nd SD layer;
S7: by laser scanning at SiC epitaxial wafer (103) inner distance SiC epitaxial wafer (103) back side 1/3Place forms Three S's D layer;
S8: by laser scanning at SiC epitaxial wafer (103) inner distance SiC epitaxial wafer (103) back side 1/2Place forms the 4th SD layer;
S9: by laser scanning at SiC epitaxial wafer (103) inner distance SiC epitaxial wafer (103) back side 3/4Place forms the 5th SD layer;
S10: by laser scanning outside the positive bottom medium (102) of SiC epitaxial wafer (103) and SiCProlong between sheet (103) front and form the 6th SD layer;
S11: the composite construction SiC disk after complete to whole scanning carries out sliver, forms composite construction SiC chip.
2. the separation by laser method of composite construction SiC chip according to claim 1, is characterized in that:Described scribing film is blue film or UV film.
3. the separation by laser method of composite construction SiC chip according to claim 1, is characterized in that:In described step S5, the speed of laser scanning is 100mm/s-400mm/s, and laser power decay module angle is82 °-105 °, the distance between a SD layer and SiC epitaxial wafer (103) front is 300um-360um.
4. the separation by laser method of composite construction SiC chip according to claim 1, is characterized in that:In described step S6, the speed of laser scanning is 200mm/s-300mm/s, and laser power decay module angle is82 °-100 °, the distance between the 2nd SD layer and SiC epitaxial wafer (103) front is 270um-300um.
5. the separation by laser method of composite construction SiC chip according to claim 1, is characterized in that:In described step S7, the speed of laser scanning is 200mm/s-250mm/s, and laser power decay module angle is82 °-95 °, the distance between Three S's D layer and SiC epitaxial wafer (103) front is 240um-270um.
6. the separation by laser method of composite construction SiC chip according to claim 1, is characterized in that:In described step S8, the speed of laser scanning is 150mm/s-200mm/s, and laser power decay module angle is82 °-90 °, the distance between the 4th SD layer and SiC epitaxial wafer (103) front is 180um-240um.
7. the separation by laser method of composite construction SiC chip according to claim 1, is characterized in that:In described step S9, the speed of laser scanning is 100mm/s-150mm/s, and laser power decay module angle is82 °-87 °, the distance between the 5th SD layer and SiC epitaxial wafer (103) front is 90um-180um.
8. the separation by laser method of composite construction SiC chip according to claim 1, is characterized in that:In described step S10, the speed of laser scanning is 100mm/s-150mm/s, and laser power decay module angle is82 °-85 °, the distance between the 6th SD layer and SiC epitaxial wafer (103) front is 4um-90um.
9. the separation by laser method of composite construction SiC chip according to claim 1, is characterized in that:Sliver in described step S11 carries out in scribe line, and the design width of scribe line is SiC extension after laser scanningSheet (103) loses 70～100 times of partial width.
CN201510955804.1A 2015-12-18 2015-12-18 Laser separation method for SiC chip of compound structure Pending CN105598594A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106653689A (en) * 2016-12-26 2017-05-10 中国电子科技集团公司第五十五研究所 Method for dual-pulse frequency laser separation of composite SiC
CN107564805A (en) * 2017-06-30 2018-01-09 中国电子科技集团公司第五十五研究所 A kind of preparation method of ultra-thin carbonization silicon
CN109461701A (en) * 2018-09-27 2019-03-12 全球能源互联网研究院有限公司 A kind of compound dicing method and semiconductor devices of power chip

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US20110000897A1 (en) * 2007-08-03 2011-01-06 Hamamatsu Photonics K.K. Laser working method, laser working apparatus, and its manufacturing method
US20140001679A1 (en) * 2011-01-13 2014-01-02 Hamamatsu Photonics K.K. Laser processing method
CN103537805A (en) * 2012-07-17 2014-01-29 深圳市大族激光科技股份有限公司 Wafer laser cutting method and wafer processing method
CN203804424U (en) * 2014-01-29 2014-09-03 苏州兰叶光电科技有限公司 Cover glass laser scribing device
CN105127605A (en) * 2015-09-29 2015-12-09 山东浪潮华光光电子股份有限公司 Laser cutting method for sapphire substrate LED chip

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101516566A (en) * 2006-09-19 2009-08-26 浜松光子学株式会社 Laser processing method and laser processing apparatus
US20110000897A1 (en) * 2007-08-03 2011-01-06 Hamamatsu Photonics K.K. Laser working method, laser working apparatus, and its manufacturing method
US20140001679A1 (en) * 2011-01-13 2014-01-02 Hamamatsu Photonics K.K. Laser processing method
CN103537805A (en) * 2012-07-17 2014-01-29 深圳市大族激光科技股份有限公司 Wafer laser cutting method and wafer processing method
CN203804424U (en) * 2014-01-29 2014-09-03 苏州兰叶光电科技有限公司 Cover glass laser scribing device
CN105127605A (en) * 2015-09-29 2015-12-09 山东浪潮华光光电子股份有限公司 Laser cutting method for sapphire substrate LED chip

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106653689A (en) * 2016-12-26 2017-05-10 中国电子科技集团公司第五十五研究所 Method for dual-pulse frequency laser separation of composite SiC
CN106653689B (en) * 2016-12-26 2019-09-10 中国电子科技集团公司第五十五研究所 A kind of method of dipulse frequency laser separation composite SiC
CN107564805A (en) * 2017-06-30 2018-01-09 中国电子科技集团公司第五十五研究所 A kind of preparation method of ultra-thin carbonization silicon
CN109461701A (en) * 2018-09-27 2019-03-12 全球能源互联网研究院有限公司 A kind of compound dicing method and semiconductor devices of power chip

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