CN104993025A - Silicon nitride membrane strained GeSn infrared LED device and preparation method thereof - Google Patents
Silicon nitride membrane strained GeSn infrared LED device and preparation method thereof Download PDFInfo
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- CN104993025A CN104993025A CN201510383479.6A CN201510383479A CN104993025A CN 104993025 A CN104993025 A CN 104993025A CN 201510383479 A CN201510383479 A CN 201510383479A CN 104993025 A CN104993025 A CN 104993025A
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 41
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 229910005898 GeSn Inorganic materials 0.000 title abstract 6
- 239000012528 membrane Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N tin hydride Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- -1 germanium tin Chemical compound 0.000 claims description 57
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 44
- 229910052732 germanium Inorganic materials 0.000 claims description 44
- 238000000137 annealing Methods 0.000 claims description 15
- 239000004411 aluminium Substances 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 10
- 238000003754 machining Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004377 microelectronic Methods 0.000 description 4
- 230000000051 modifying Effects 0.000 description 4
- 230000003287 optical Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000011030 bottleneck Methods 0.000 description 2
- 230000000295 complement Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006011 modification reaction Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000000750 progressive Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
The invention discloses a silicon nitride membrane strained GeSn infrared LED device and a preparation method thereof. The infrared LED device comprises an Si substrate and a Ge buffer layer arranged on the silicon substrate, wherein the Ge buffer layer is successively provided with an aluminum electrode, a transverse P-I-N GeSn layer, a silicon nitride layer and an aluminum electrode from the left to the right, and a silicon nitride film is deposited above a GeSn P-I-N structure. According to the invention, the device and the method are compatible with a CMOS process, the problem of difficulty in growing a GeSn alloy with a high stannum ingredient content in the prior art is overcome, the stress size can be changed through adjusting the structure of a silicon nitride membrane so as to realize the demand of a GeSn material light source for different-wavelength light, the photoelectric conversion efficiency is quite high, the light stability is high, the processing is simple and convenient, and a concrete structure and a concrete implementation scheme are provided for realization of a light source on chip.
Description
Technical field
The present invention relates to semiconductor photoelectric device preparation field, be specifically related to a kind of silicon nitride film and cause infrared LED device and preparation method thereof in the germanium tin of strain.
Background technology
Along with technical requirement improves day by day, the limit of the microfabrication of information processing hardware starts to display, and has fettered the growing of technology.In the past few decades in development, microelectronic technique according to Moore's Law progress always.Progressive most distinguishing feature is exactly that process is more and more less, and integrated level is more and more higher, and cost is more and more lower.But along with microelectronic technique size is advanced to nanoscale, the bottleneck that various physical effect is brought is also more and more obvious.In order to breakthrough bottleneck, researchers have focused on the field that combined with photoelectron technology by microelectronics, Here it is photoelectricity integrated (OEIC).Through the unremitting effort of the semiconductor giants such as Intel, IBM, many Primary Components of silicon optoelectronic technology are able to realize on integrated circuit platform, comprise high-speed silicon optical modulator, detector and waveguide component and are obtained for breakthrough.But due to silicon be that indirect bandgap material causes being difficult to realize direct luminescence, on sheet, light source does not have accomplished, and this is the biggest problem that silicon photon technology is all the time faced.
Iii-v and silicon hybrid integrated are the schemes more effectively realizing light source and passive device combination, but III-V material exists with silicon processing platform incompatible, particularly with CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductors (CMOS)) standard technology platform is incompatible, there is the problem that iii-v device performance reduces and processing cost is high.For realizing the luminescence of material self, there is multiple technologies scheme, comprise and adopt the means such as silicon nanocluster, porous silicon, er-doped, above way is also all limited to the factors such as the low or luminescent properties of luminous efficiency is unstable, and on the sheet that distance is practical, light source still has very large gap.
Find in the process of solution researcher, germanium ashbury metal enters the visual field of research.Germanium belongs to indirect gap semiconductor, and tin belongs to metal, the band gap of germanium ashbury metal can be made with change (0-0.66eV) continuously adjustabe in the relative broad range of infrared band of tin component by mixing tin at germanium material.Germanium tin material effectively can reduce the effective mass of charge carrier, there is not polar optical scattering, and thus carrier mobility can be risen to larger value by it.Therefore, germanium tin material can in high-speed electronic components, efficient photonic device, and there is larger range of application the aspects such as infrared photon device.In addition, germanium ashbury metal can with existing ic process compatibility, high mobility transistor based on germanium tin material is widely used in deep submicron integrated circuit technology, and is equally also able on CMOS standard technology platform accomplished based on the photodetector of germanium tin alloy material and optical modulator.
The modulation of being with of germanium is considered to most possibly realize the technology of laser on sheet, can be with that to modulate be the focus of current photoelectron research field by what mix that tin realizes germanium.If laser on cmos compatible can be realized on germanium, just can realize light network on sheet completely, data are transmitted between the chips and between equipment as medium using photon instead of electronics, light network speed can be played fast, be with roomy, noiseless, density is high, the advantage such as low in energy consumption, microelectronic technique maturation can be made full use of again simultaneously, High Density Integration, high finished product rate, the feature such as with low cost, high-performance computer of new generation will be promoted based on laser on the sheet of germanium material, the development of optical communication facility and consumer electronics product, there are wide application and market prospects.
The conventional method that the germanium tin material of current preparation luminescence adopts is the method for chemical vapour deposition (CVD) and molecular beam epitaxial growth.But due to reasons such as the larger lattice mismatches of low solid solubility, tin material and the germanium material of tin material in germanium, aobvious comparatively harsh of the process conditions required for germanium ashbury metal device of high tin component be realized, therefore to realize aobvious very difficult of industrial volume production.
LED research at present based on germanium material is still in the junior stage, deliver all to some extent both at home and abroad still to have photoelectric conversion efficiency based on germanium material LED component low, the shortcomings such as photostability is bad, cannot meet sheet glazing electricity integrated system to the requirement of light source on sheet.
Summary of the invention
For adopting the LED component based on germanium tin material of each structure in prior art, there is the shortcomings such as high tin component doping difficulty is high, photoelectric conversion efficiency is low, photostability is poor at present, still cannot meet sheet glazing electricity integrated system to the requirement of light source, the invention provides a kind of silicon nitride film and cause infrared LED device and preparation method thereof in the germanium tin of strain.
For achieving the above object, the technical scheme that the present invention takes is:
A kind of silicon nitride film causes infrared LED device in the germanium tin of strain, the germanium buffer layer comprising silicon substrate and arrange on a silicon substrate, germanium buffer layer is provided with from left to right successively aluminium electrode, horizontal P-I-N germanium tin layers, silicon nitride layer and aluminium electrode, described germanium tin P-I-N superstructure is deposited with silicon nitride film.
For solving the problem, present invention also offers the preparation method that a kind of silicon nitride film causes infrared LED device in the germanium tin of strain, comprising the steps:
S1, employing low and high temperature two-step method, after first 250 DEG C of growth one deck low temperature germanium buffer layers on a silicon substrate, be warming up to 500 DEG C of growth high temperature germanium buffer layers;
S2, on the germanium buffer layer of step S1 gained, grow one deck germanium tin material;
S3, on the germanium tin material of step S2 gained, prepare horizontal P-I-N structure;
S4, germanium tin P-I-N superstructure deposition silicon nitride film in step S3 gained, make it produce tensile strain;
S5, germanium tin layers two outgrowth aluminium electrode in step S4 gained, obtain strained Germanium tin LED component.
Wherein, the growing method in described step S1 adopts low temperature molecular beam epitaxy method.
Wherein, the thickness of the germanium buffer layer in described step S1 is 300nm.
Wherein, the growing method of the germanium tin material in described step S2 adopts low temperature molecular beam epitaxy method, and its growth temperature is 200 DEG C.
Wherein, the thickness of the germanium tin material in described step S2 is 300nm, and tin component is 3.8%.
Wherein, the P-I-N structure Zhe Monei P district impurity in described step S3 is boron, and adopt thermal diffusion process doping, baking temperature is 200 DEG C, and the time is 20 minutes, and annealing temperature is 350 DEG C, and annealing time is 30 minutes; In described P-I-N structure, N district impurity is phosphorus, and adopt thermal diffusion process doping, baking temperature is 200 DEG C, and the time is 20 minutes, and annealing temperature is 750 DEG C, and annealing time is 15 seconds.
Wherein, the condition of deposit in described step S4 is: temperature is 370 DEG C, and reaction chamber pressure is 1500m τ, and power is 10W, SiH
4/ NH
3gas flow ratio be 0.75, deposition time is 4Min, and growth thickness is
Wherein, the aluminium electrode of described step S5 adopts evaporation of metal technique to make, and structure is followed successively by titanium, aluminium and gold from bottom to up, and titanium layer thickness is 20nm, and the speed of growth is
aluminum layer thickness is that in 130nm, 10nm, growth rate is
in 10nm to 130nm, growth rate is
layer gold thickness is 20nm, and growth rate is
The present invention has following beneficial effect:
Compatible CMOS technology, overcome the problem of the germanium ashbury metal growth difficulty of current high tin constituent content, and by adjusting the structural change tensile stress size of silicon nitride film to realize germanium tin material light source to the demand of different wavelengths of light, there is higher photoelectric conversion efficiency, photostability, processing is simple, convenient, provides a concrete structure and embodiment for realizing light source on sheet.
Accompanying drawing explanation
Fig. 1 is the machining sketch chart that a kind of silicon nitride film of the embodiment of the present invention causes step S1 in the preparation method of infrared LED device in the germanium tin of strain.
Fig. 2 is the machining sketch chart that a kind of silicon nitride film of the embodiment of the present invention causes step S2 in the preparation method of infrared LED device in the germanium tin of strain.
Fig. 3 is the machining sketch chart that a kind of silicon nitride film of the embodiment of the present invention causes step S3 in the preparation method of infrared LED device in the germanium tin of strain.
Fig. 4 is the machining sketch chart that a kind of silicon nitride film of the embodiment of the present invention causes step S4 in the preparation method of infrared LED device in the germanium tin of strain.
Fig. 5 causes the machining sketch chart of step S5 in the preparation method of infrared LED device in the germanium tin of strain for a kind of silicon nitride film of the embodiment of the present invention.
Embodiment
In order to make objects and advantages of the present invention clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 5, embodiments provide a kind of silicon nitride film and cause infrared LED device in the germanium tin of strain, the germanium buffer layer comprising silicon substrate and arrange on a silicon substrate, germanium buffer layer is provided with from left to right successively aluminium electrode, horizontal P-I-N germanium tin layers, silicon nitride layer and aluminium electrode, described germanium tin P-I-N superstructure is deposited with silicon nitride film.
As Figure 1-5, embodiments provide the preparation method that a kind of silicon nitride film causes infrared LED device in the germanium tin of strain, comprise the steps:
S1, employing low and high temperature two-step method, after first 250 DEG C of growth one deck low temperature germanium buffer layers on a silicon substrate, be warming up to 500 DEG C of growth high temperature germanium buffer layers;
S2, on the germanium buffer layer of step S1 gained, grow one deck germanium tin material;
S3, on the germanium tin material of step S2 gained, prepare horizontal P-I-N structure;
S4, germanium tin P-I-N superstructure deposition silicon nitride film in step S3 gained, make it produce tensile strain;
S5, germanium tin layers two outgrowth aluminium electrode in step S4 gained, obtain strained Germanium tin LED component.
As shown in Figure 1, described silicon substrate is isolate supports material or body silicon materials substrate.In the present embodiment, what take is body silicon materials substrates.The growing method of germanium buffer layer is low temperature molecular beam epitaxy method, adopts the growth of low and high temperature two-step method, first at 250 DEG C of growth one deck low temperature germanium buffer layers, and then temperature is brought up to 500 DEG C of growth high temperature germanium buffer layers.The gross thickness of described germanium buffer layer is 300nm.
As shown in Figure 2, the growing method of described germanium tin material is low temperature molecular beam epitaxy method, and its growth temperature is 200 DEG C.The thickness of described germanium tin material is 300nm, and tin component is 3.8%.
As shown in Figure 3, described P-I-N structure Zhe Monei P district impurity is boron, and adopt thermal diffusion process, baking temperature is 200 DEG C, and the time is 20 minutes, and adopts annealing process.Described annealing process is, annealing temperature is 350 DEG C, and annealing time is 30 minutes.In described P-I-N structure, N district impurity is phosphorus, and adopt thermal diffusion process, baking temperature is 200 DEG C, and the time is 20 minutes, and adopts rta technique.Described rta technique is, annealing temperature is 750 DEG C, and annealing time is annealing 15 seconds.
As shown in Figure 4, described silicon nitride film is the heavily stressed film being applicable to strained Germanium tinware part, adopts PECVD (plasma chemical vapor deposition) growth, its process conditions are: temperature is 370 DEG C, reaction chamber pressure is 1500m τ, and power is 10W, SiH
4/ NH
3gas flow ratio be 0.75, deposition time is 4Min, and growth thickness is
producing stress by covering heavily stressed silicon nitride film on germanium material, causing the strain of germanium material.
As shown in Figure 5, also be concrete structure schematic diagram of the present invention, described aluminium electrode adopts evaporation of metal technique, its process conditions are, 20nm Ti (0.5A/s) and 130nm Al (0.5A/s in 10nm and 0.7A/s in 120nm), 20nm Au (0.5A/s), completes the preparation of strained Germanium LED component.
What this concrete enforcement adopted is that heavily stressed silicon nitride film causes strain.By growing heavily stressed silicon nitride film above germanium tin LED component, in germanium tin material, introducing tensile stress, the germanium tin material of low tin component being converted to the luminous efficiency that direct band gap improves germanium LED component.Separately we are by adjusting the technological parameter of PECVD, be that guiding adjusts silicon nitride film to the stress intensity of germanium film, improve the strained Germanium LED component of photoelectric conversion efficiency and preparation specific wavelength of light with demand.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (9)
1. silicon nitride film causes infrared LED device in the germanium tin of strain, it is characterized in that, the germanium buffer layer comprising silicon substrate and arrange on a silicon substrate, germanium buffer layer is provided with from left to right successively aluminium electrode, horizontal P-I-N germanium tin layers, silicon nitride layer and aluminium electrode, described germanium tin P-I-N superstructure is deposited with silicon nitride film.
2. silicon nitride film causes the preparation method of infrared LED device in the germanium tin of strain, it is characterized in that, comprises the steps:
S1, employing low and high temperature two-step method, after first 250 DEG C of growth one deck low temperature germanium buffer layers on a silicon substrate, be warming up to 500 DEG C of growth high temperature germanium buffer layers;
S2, on the germanium buffer layer of step S1 gained, grow one deck germanium tin material;
S3, on the germanium tin material of step S2 gained, prepare horizontal P-I-N structure;
S4, germanium tin P-I-N superstructure deposition silicon nitride film in step S3 gained, make it produce tensile strain;
S5, germanium tin layers two outgrowth aluminium electrode in step S4 gained, obtain strained Germanium tin LED component.
3. silicon nitride film according to claim 2 causes the preparation method of infrared LED device in the germanium tin of strain, it is characterized in that, the growing method in described step S1 adopts low temperature molecular beam epitaxy method.
4. silicon nitride film according to claim 2 causes the preparation method of infrared LED device in the germanium tin of strain, it is characterized in that, the thickness of the germanium buffer layer in described step S1 is 300nm.
5. silicon nitride film according to claim 2 causes the preparation method of infrared LED device in the germanium tin of strain, it is characterized in that, the growing method of the germanium tin material in described step S2 adopts low temperature molecular beam epitaxy method, and its growth temperature is 200 DEG C.
6. silicon nitride film according to claim 2 causes the preparation method of infrared LED device in the germanium tin of strain, it is characterized in that, the thickness of the germanium tin material in described step S2 is 300nm, and tin component is 3.8%.
7. silicon nitride film according to claim 2 causes the preparation method of infrared LED device in the germanium tin of strain, it is characterized in that, P-I-N structure Zhe Monei P district impurity in described step S3 is boron, employing thermal diffusion process is adulterated, baking temperature is 200 DEG C, time is 20 minutes, and annealing temperature is 350 DEG C, and annealing time is 30 minutes; In described P-I-N structure, N district impurity is phosphorus, and adopt thermal diffusion process doping, baking temperature is 200 DEG C, and the time is 20 minutes, and annealing temperature is 750 DEG C, and annealing time is 15 seconds.
8. silicon nitride film according to claim 2 causes the preparation method of infrared LED device in the germanium tin of strain, it is characterized in that, the condition of deposit in described step S4 is: temperature is 370 DEG C, and reaction chamber pressure is 1500m τ, and power is 10W, SiH
4/ NH
3gas flow ratio be 0.75, deposition time is 4Min, and growth thickness is
9. silicon nitride film according to claim 2 causes the preparation method of infrared LED device in the germanium tin of strain, it is characterized in that,
The aluminium electrode of described step S5 adopts evaporation of metal technique to make, and structure is followed successively by titanium, aluminium and gold from bottom to up, and titanium layer thickness is 20nm, and the speed of growth is
aluminum layer thickness is that in 130nm, 10nm, growth rate is
in 10nm to 130nm, growth rate is
layer gold thickness is 20nm, and growth rate is
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