CN109326683A - 单晶硅片碱抛清洗方法 - Google Patents
单晶硅片碱抛清洗方法 Download PDFInfo
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- CN109326683A CN109326683A CN201811077772.XA CN201811077772A CN109326683A CN 109326683 A CN109326683 A CN 109326683A CN 201811077772 A CN201811077772 A CN 201811077772A CN 109326683 A CN109326683 A CN 109326683A
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- silicon wafer
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- 238000004140 cleaning Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 9
- 239000003513 alkali Substances 0.000 claims abstract description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 4
- 239000011259 mixed solution Substances 0.000 claims abstract description 4
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 3
- 238000005266 casting Methods 0.000 abstract 1
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 206010027146 Melanoderma Diseases 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Silicon Compounds (AREA)
Abstract
本发明涉及太阳能电池槽式清洗领域，具体提供一种单晶硅片碱抛清洗方法，用于清洗一碱抛设备内碱抛后的硅片，该方法包括：首先在该碱抛设备内加入盐酸和双氧水的混合溶液，除金属离子并生成二氧化硅；其次加入氢氟酸溶液除去二氧化硅及该硅片表面的残留物质。本发明单晶硅片碱抛后清洗方法，硅片在碱抛设备内用盐酸加双氧水作为后清洗槽、水槽和氢氟酸的酸槽，不破坏绒面，节约碱液，清洗效果好，有效提升了良率。
Description
技术领域
本发明涉及太阳能电池槽式清洗领域，特别涉及单晶硅片清洗碱抛脏污和硅片表面残留物的清洗方法。
背景技术
太阳能电池刻蚀抛光工艺是太阳能高效电池制造工艺中至关重要的一步，对成品电池片的电性能以及EL良率有着重大的影响，刻蚀后硅片背面反射率的均匀性决定了背钝化镀膜的均匀性，镀膜的均匀性决定了激光开孔率及大小的均匀性。因此刻蚀在整个PERC电池（钝化发射区背面电池，Passivated emitter rear contact solar cells）生产过程中起着举足轻重的作用。
酸抛是另一种较为常见的技术手段，但采用这种处理方法存在三个问题：第一，酸抛产生的高浓度的酸雾难以处理，易导致环保不达标；第二，酸抛反射率很难提高，而且稳定性差；第三，酸抛生产过程中难调节，若排风不畅造成酸雾排不出去，酸雾残留在设备内，不但腐蚀设备而且造成硅片有酸残留，做成成品电池片后EL黑斑严重，降低了成品的合格率，返工率高；第四，酸抛的成本非常大。
碱抛则是另一种技术手段，碱抛后清洗则避免了上述缺点，但碱抛添加剂难以清洗，会对绒面造成一定的破坏。
发明内容
有鉴于此，本发明的目的是解决上述现有技术的不足，提供一种太阳能电池碱抛后清洗硅片上的添加剂而不破坏绒面的方法。
本发明解决上述现有技术的不足所采用的技术方案是：一种单晶硅片碱抛清洗方法，该方法包括：
步骤（1）：在该碱抛设备内加入盐酸和双氧水的混合溶液，除金属离子并生成二氧化硅；
步骤（2）：加入氢氟酸溶液除去二氧化硅及该硅片表面的残留物质。
相较于现有技术，本发明的单晶硅片碱抛清洗方法，硅片在碱抛设备内用盐酸加双氧水作为后清洗槽、水槽和氢氟酸的酸槽，替代现有技术中使用碱加双氧水的后清洗、水槽和盐酸与氢氟酸组成的混酸槽，实现对碱抛后硅片上的添加剂进行清洗，不破坏绒面，节约碱液，清洗效果好，有效提升了良率。
附图说明
无。
具体实施方式
以下描述用于揭露本发明以使本领域技术人员能够实现本发明。以下描述中的优选实施例只作为举例，本领域技术人员可以想到其他显而易见的变型。在以下描述中界定的本发明的基本原理可以应用于其他实施方案、变形方案、改进方案、等同方案以及没有背离本发明的精神和范围的其他技术方案。
一种单晶硅片碱抛清洗方法，用于清洗一碱抛设备内碱抛后的硅片，该方法为：
步骤（1）：在该碱抛设备内加入盐酸和双氧水的混合溶液，除金属离子并生成二氧化硅；
步骤（2）：加入氢氟酸溶液除去二氧化硅及该硅片表面的残留物质。
于本实施例中，硅片在碱抛设备内用盐酸加双氧水作为后清洗槽、水槽和氢氟酸的酸槽，改变了溶液成分以酸液作为后清洗。
本领域的技术人员应理解，上述描述的本发明的实施例只作为举例而并不限制本发明。本发明的目的已经完整并有效地实现。本发明的功能及结构原理已在实施例中展示和说明，在没有背离所述原理下，本发明的实施方式可以有任何变形或修改。
Claims (1)
1.一种单晶硅片碱抛清洗方法，用于清洗一碱抛设备内碱抛后的硅片，其特征在于，该方法包括：
步骤（1）：在该碱抛设备内加入盐酸和双氧水的混合溶液，除金属离子并生成二氧化硅；
步骤（2）：加入氢氟酸溶液除去二氧化硅及该硅片表面的残留物质。
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811077772.XA CN109326683A (zh) | 2018-09-16 | 2018-09-16 | 单晶硅片碱抛清洗方法 |
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| CN201811077772.XA CN109326683A (zh) | 2018-09-16 | 2018-09-16 | 单晶硅片碱抛清洗方法 |
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| CN109326683A true CN109326683A (zh) | 2019-02-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112143573A (zh) * | 2020-09-29 | 2020-12-29 | 常州时创能源股份有限公司 | 硅片碱抛后清洗用添加剂及其应用 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102154711A (zh) * | 2010-12-31 | 2011-08-17 | 百力达太阳能股份有限公司 | 一种单晶硅清洗液及预清洗工艺 |
| CN102709401A (zh) * | 2012-06-29 | 2012-10-03 | 英利能源（中国）有限公司 | 一种n型太阳能电池制作方法 |
| WO2015113890A2 (de) * | 2014-01-31 | 2015-08-06 | Technische Universität Bergakademie Freiberg | Verfahren zur erzeugung von texturen oder von polituren auf der oberfläche von monokristallinen siliziumwafern |
| CN105304765A (zh) * | 2015-11-13 | 2016-02-03 | 新奥光伏能源有限公司 | 一种硅异质结太阳能电池及其制作方法 |
| CN106784063A (zh) * | 2017-01-25 | 2017-05-31 | 北京普扬科技有限公司 | 包含倒四棱锥绒面结构的单晶硅片及其应用 |
-
2018
- 2018-09-16 CN CN201811077772.XA patent/CN109326683A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102154711A (zh) * | 2010-12-31 | 2011-08-17 | 百力达太阳能股份有限公司 | 一种单晶硅清洗液及预清洗工艺 |
| CN102709401A (zh) * | 2012-06-29 | 2012-10-03 | 英利能源（中国）有限公司 | 一种n型太阳能电池制作方法 |
| WO2015113890A2 (de) * | 2014-01-31 | 2015-08-06 | Technische Universität Bergakademie Freiberg | Verfahren zur erzeugung von texturen oder von polituren auf der oberfläche von monokristallinen siliziumwafern |
| CN105304765A (zh) * | 2015-11-13 | 2016-02-03 | 新奥光伏能源有限公司 | 一种硅异质结太阳能电池及其制作方法 |
| CN106784063A (zh) * | 2017-01-25 | 2017-05-31 | 北京普扬科技有限公司 | 包含倒四棱锥绒面结构的单晶硅片及其应用 |
Non-Patent Citations (1)
| Title |
|---|
| 叶志镇 等: "《半导体薄膜技术与物理》", 30 September 2008 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112143573A (zh) * | 2020-09-29 | 2020-12-29 | 常州时创能源股份有限公司 | 硅片碱抛后清洗用添加剂及其应用 |
| CN112143573B (zh) * | 2020-09-29 | 2021-07-06 | 常州时创能源股份有限公司 | 硅片碱抛后清洗用添加剂及其应用 |
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Address after: Room 101, building 1, 58 Xiangjiang Road, Yancheng Economic and Technological Development Zone, Jiangsu Province 224000 Applicant after: Jiangsu Runyang New Energy Technology Co.,Ltd. Address before: 215300 20th floor, Dibao financial building, East Qianjin Road, Kunshan Development Zone, Suzhou City, Jiangsu Province Applicant before: SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Address after: Room 101, building 1, 58 Xiangjiang Road, Yancheng Economic and Technological Development Zone, Jiangsu Province 224000 Applicant after: Jiangsu Runyang New Energy Technology Co.,Ltd. Address before: Room 101, building 1, 58 Xiangjiang Road, Yancheng Economic and Technological Development Zone, Jiangsu Province 224000 Applicant before: Jiangsu Runyang New Energy Technology Co.,Ltd. |
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