CN109326673A - P型晶体硅perc电池及其制备方法 - Google Patents
P型晶体硅perc电池及其制备方法 Download PDFInfo
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- CN109326673A CN109326673A CN201810908525.3A CN201810908525A CN109326673A CN 109326673 A CN109326673 A CN 109326673A CN 201810908525 A CN201810908525 A CN 201810908525A CN 109326673 A CN109326673 A CN 109326673A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 140
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 140
- 239000010703 silicon Substances 0.000 title claims abstract description 140
- 239000013078 crystal Substances 0.000 title claims abstract description 136
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract 29
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract 29
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract 29
- 238000002161 passivation Methods 0.000 claims abstract description 56
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229920005591 polysilicon Polymers 0.000 claims abstract description 31
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 23
- 238000007747 plating Methods 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 235000008216 herbs Nutrition 0.000 claims description 12
- 210000002268 wool Anatomy 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- -1 tetramethyl hydrogen Chemical compound 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000006385 ozonation reaction Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical group [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 12
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000001228 spectrum Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 4
- 238000001764 infiltration Methods 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (27)
Priority Applications (1)
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CN201810908525.3A CN109326673A (zh) | 2018-08-10 | 2018-08-10 | P型晶体硅perc电池及其制备方法 |
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CN201810908525.3A CN109326673A (zh) | 2018-08-10 | 2018-08-10 | P型晶体硅perc电池及其制备方法 |
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CN201810908525.3A Pending CN109326673A (zh) | 2018-08-10 | 2018-08-10 | P型晶体硅perc电池及其制备方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109935659A (zh) * | 2019-03-21 | 2019-06-25 | 河海大学常州校区 | 一种p型太阳能电池的制备方法 |
CN109980022A (zh) * | 2019-04-24 | 2019-07-05 | 通威太阳能(成都)有限公司 | 一种p型隧穿氧化物钝化接触太阳能电池及其制备方法 |
CN110444637A (zh) * | 2019-08-28 | 2019-11-12 | 浙江正泰太阳能科技有限公司 | 一种太阳能电池片及其制作方法 |
CN110580969A (zh) * | 2019-07-31 | 2019-12-17 | 苏州腾晖光伏技术有限公司 | 一种晶体硅电池及其导电浆料 |
CN111341880A (zh) * | 2020-03-06 | 2020-06-26 | 浙江正泰太阳能科技有限公司 | 太阳能电池的制造方法 |
CN111769175A (zh) * | 2019-03-15 | 2020-10-13 | 中国科学院物理研究所 | 一种perc单晶硅太阳能电池及其制备方法 |
WO2020238199A1 (zh) * | 2019-05-24 | 2020-12-03 | 通威太阳能(安徽)有限公司 | 一种双面钝化接触的p型高效电池及其制备方法 |
WO2022033004A1 (zh) * | 2020-08-13 | 2022-02-17 | 浙江正泰太阳能科技有限公司 | 一种单晶硅片的单面制绒工艺及太阳能电池片的制备方法 |
Citations (6)
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US20090151784A1 (en) * | 2007-12-14 | 2009-06-18 | Hsin-Chiao Luan | Anti-Reflective Coating With High Optical Absorption Layer For Backside Contact Solar Cells |
US20140308773A1 (en) * | 2013-04-11 | 2014-10-16 | Chint Solar (Zhejiang) Co., Ltd. | Method of fabricating heterojunction battery |
CN106098839A (zh) * | 2016-06-15 | 2016-11-09 | 浙江正泰太阳能科技有限公司 | 一种高效晶硅perc电池的制备方法 |
CN106876491A (zh) * | 2017-03-24 | 2017-06-20 | 乐叶光伏科技有限公司 | 一种无正面栅线的p型晶体硅背接触电池结构及制作方法 |
CN207381411U (zh) * | 2017-06-22 | 2018-05-18 | 泰州隆基乐叶光伏科技有限公司 | 具有多晶硅钝化遂穿复合结的p型双面晶硅电池 |
CN208797019U (zh) * | 2018-08-10 | 2019-04-26 | 浙江正泰太阳能科技有限公司 | P型晶体硅perc电池 |
-
2018
- 2018-08-10 CN CN201810908525.3A patent/CN109326673A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090151784A1 (en) * | 2007-12-14 | 2009-06-18 | Hsin-Chiao Luan | Anti-Reflective Coating With High Optical Absorption Layer For Backside Contact Solar Cells |
US20140308773A1 (en) * | 2013-04-11 | 2014-10-16 | Chint Solar (Zhejiang) Co., Ltd. | Method of fabricating heterojunction battery |
CN106098839A (zh) * | 2016-06-15 | 2016-11-09 | 浙江正泰太阳能科技有限公司 | 一种高效晶硅perc电池的制备方法 |
CN106876491A (zh) * | 2017-03-24 | 2017-06-20 | 乐叶光伏科技有限公司 | 一种无正面栅线的p型晶体硅背接触电池结构及制作方法 |
CN207381411U (zh) * | 2017-06-22 | 2018-05-18 | 泰州隆基乐叶光伏科技有限公司 | 具有多晶硅钝化遂穿复合结的p型双面晶硅电池 |
CN208797019U (zh) * | 2018-08-10 | 2019-04-26 | 浙江正泰太阳能科技有限公司 | P型晶体硅perc电池 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111769175A (zh) * | 2019-03-15 | 2020-10-13 | 中国科学院物理研究所 | 一种perc单晶硅太阳能电池及其制备方法 |
CN109935659A (zh) * | 2019-03-21 | 2019-06-25 | 河海大学常州校区 | 一种p型太阳能电池的制备方法 |
CN109980022A (zh) * | 2019-04-24 | 2019-07-05 | 通威太阳能(成都)有限公司 | 一种p型隧穿氧化物钝化接触太阳能电池及其制备方法 |
WO2020238199A1 (zh) * | 2019-05-24 | 2020-12-03 | 通威太阳能(安徽)有限公司 | 一种双面钝化接触的p型高效电池及其制备方法 |
CN110580969A (zh) * | 2019-07-31 | 2019-12-17 | 苏州腾晖光伏技术有限公司 | 一种晶体硅电池及其导电浆料 |
CN110580969B (zh) * | 2019-07-31 | 2021-11-09 | 苏州腾晖光伏技术有限公司 | 一种晶体硅电池及其导电浆料 |
CN110444637A (zh) * | 2019-08-28 | 2019-11-12 | 浙江正泰太阳能科技有限公司 | 一种太阳能电池片及其制作方法 |
CN111341880A (zh) * | 2020-03-06 | 2020-06-26 | 浙江正泰太阳能科技有限公司 | 太阳能电池的制造方法 |
WO2022033004A1 (zh) * | 2020-08-13 | 2022-02-17 | 浙江正泰太阳能科技有限公司 | 一种单晶硅片的单面制绒工艺及太阳能电池片的制备方法 |
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