CN109307880A - Multi-electrode improves positively charged218The measurement chamber and method of Po collection efficiency - Google Patents
Multi-electrode improves positively charged218The measurement chamber and method of Po collection efficiency Download PDFInfo
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- CN109307880A CN109307880A CN201811359464.6A CN201811359464A CN109307880A CN 109307880 A CN109307880 A CN 109307880A CN 201811359464 A CN201811359464 A CN 201811359464A CN 109307880 A CN109307880 A CN 109307880A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
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Abstract
Multi-electrode improves positively charged218The measurement chamber and method of Po collection efficiency, measurement cavity wall is conductive layer, its siding is equipped with escape pipe and air inlet pipe, semiconductor detector is mounted on the centre on insulated end cover, plurality of electrodes is installed on insulated end cover in a ring around semiconductor detector, first annular measurement circle is formed, end cap is fixed on the open end of cavity.Measurement method is as follows: cavity intake pipe is connect with radon chamber, electrode after semiconductor detector, conductive layer and series connection passes through conducting wire respectively and connect with high-pressure modular, and sampling pump is connect with escape pipe, opens sampling pump, radon chamber air is introduced, so that radon consistence is identical as in radon chamber in cavity.High-pressure modular adjusts voltage between conductive layer and semiconductor detector and electrode surface respectively, obtains what semiconductor detector measured using secondary meter218Po decay counting rate, recycles secondary meter to obtain semiconductor detector measurement218Po decay counts progress analytical calculation and obtains the concentration of radon.
Description
Technical field
The present invention relates to nuclear radiation detection technology, especially a kind of static collection that effectively improved using multi-electrode surveys radon
Instrument is to positively charged218The measurement chamber and measurement method of Po collection efficiency.
Background technique
In environment radon (222Rn) be natural radiation suffered by the mankind main source.Radon measurement based on different measuring principles
There are many methods and instrument, and wherein static collection emanometer has power spectrum resolution capability row due to its high degree of automation
Out220The interference of Rn and be widely used.So-called static collection is exactly to have a measurement chamber, and measurement chamber is usually
One semiconductor detector is arranged at dome-type or cylindrical type, the top for measuring chamber, adds between measurement cavity wall and semiconductor detector
Upper high voltage forms electrostatic field.Radon is filtered out after daughter and is pumped to measurement chamber with the air in environment, intracavitary continues to decline measuring
Become, generates positively charged218Po, it is positively charged218Po will be collected into the surface of semiconductor detector under the action of electrostatic field.
It is positively charged during collection218Po and the molecule in air, ion collision, if with electronegative OH-Ion collision just has
It may be combined into the particle of electroneutral, the surface of semiconductor detector cannot be collected by electrostatic field, so that collection efficiency reduces.
Current theoretical simulation and experiment all shows: the electric field strength near the semiconductor detector surface of this kind of measurement chamber is very big,
And the electric field strength near measurement chamber cavity wall is smaller.It is positively charged that this results in the radon decay near measurement chamber cavity wall to generate
's218Drift velocity of the Po under electrostatic field is smaller, and acquisition time is longer, during collection with electronegative OH-Ion
The probability of recombination is larger, so that positively charged218Po is collected into the inefficient of detector surface, the detection of emanometer by electrostatic field
Sensitivity is lower.
Summary of the invention
The purpose of the present invention is overcome the above-mentioned insufficient of the prior art and provide it is a kind of effectively improved using multi-electrode it is quiet
Electric collecting method emanometer is to positively charged218The measurement chamber and measurement method of Po collection efficiency.
The technical scheme is that multi-electrode improve it is positively charged218The measurement chamber of Po collection efficiency, including cavity, absolutely
Acies lid, semiconductor detector and electrode.
The inner wall of cavity is conductive layer, and siding is equipped with escape pipe and air inlet pipe, and cavity cavity heights are 6-25 centimetres.
Semiconductor detector is mounted on the centre on insulated end cover, and plurality of electrodes is in ring around semiconductor detector
Shape is installed on insulated end cover, and first annular measurement circle is formed, and on first annular survey circle, the centre distance of two neighboring electrode is
6-15 centimetres, the center of electrode is from being 6-15 centimetres with a distance from wall conductive layer in cavity.
End cap is fixed by screws in the open end of cavity.
Electrostatic field is improved to positively charged using above-mentioned measurement chamber218The method of the collection efficiency of Po is as follows:
A, the air inlet pipe on cavity is connect with radon chamber, the conductive layer of semiconductor detector and cavity inner wall pass through respectively conducting wire with
High-pressure modular connection, electrode are connect with high-pressure modular again after being connected by conducting wire, and sampling pump is connect with the escape pipe on cavity, is opened
Sampling pump is opened, the air of radon chamber is introduced, so that the intracorporal radon consistence of chamber is identical as in radon chamber.
B, it by voltage between conductive layer and semiconductor detector in high-pressure modular adjusting cavity body, is obtained using secondary meter
What semiconductor detector measured218Po decays counting rate, and counting rate increases with the raising of voltage, when continuing to be turned up voltage
When counting rate is basically unchanged, stop adjusting voltage between conductive layer and semiconductor detector.
C, pass through voltage, utilization between conductive layer and first annular measurement circle upper electrode surface in high-pressure modular adjusting cavity body
Secondary meter obtains what semiconductor detector measured218Po decay counting rate stops adjusting after counting rate reaches maximum value
Voltage between conductive layer and electrode surface.
Electrostatic field is improved to positively charged by the above method218Then the collection efficiency of Po is half-and-half led using secondary meter
Bulk detector measurement obtains218Po decay counts progress analytical calculation and obtains the concentration of radon.
The further technical solution of the present invention is: on insulated end cover, around first annular measurement circle, having additional by multiple
A plurality of annular measurement circles of several electrode compositions, the spacing distance of annular measurement circle is respectively 6-15 centimetres, annular measurement circle
The centre distance of upper two neighboring electrode is 6-15 centimetres, and the center of outmost turns annular measurement circle top electrode is conductive from wall in cavity
The distance of layer is 6-15 centimetres.
Electrostatic field is improved to positively charged using above-mentioned measurement chamber218The method of the collection efficiency of Po is as follows:
A, the air inlet pipe on cavity is connect with radon chamber, the conductive layer of semiconductor detector and cavity inner wall pass through respectively conducting wire with
High-pressure modular connects, and the electrode in each annular measurement circle is connect with high-pressure modular again after being connected by conducting wire, sampling pump and cavity
On escape pipe connection, open sampling pump, the air of radon chamber is introduced, so that the intracorporal radon consistence of chamber is identical as in radon chamber.
B, it by voltage between conductive layer and semiconductor detector in high-pressure modular adjusting cavity body, is obtained using secondary meter
What semiconductor detector measured218Po decays counting rate, and counting rate increases with the raising of voltage, when continuing to be turned up voltage
When counting rate is basically unchanged, stop adjusting voltage between conductive layer and semiconductor detector.
C, successively distinguished by high-pressure modular in adjusting cavity body between conductive layer and each annular measurement circle upper electrode surface
Voltage obtains what semiconductor detector measured using secondary meter218Po decay counting rate, when in each annular measurement circle
After counting rate reaches maximum value, stop adjusting voltage between conductive layer and each annular measurement circle upper electrode surface.
It can be further improved electrostatic field to positively charged by the above method218Then the collection efficiency of Po utilizes secondary instrument
Table obtains the measurement of semiconductor detector 3218Po decay counts progress analytical calculation and obtains the concentration of radon.
Compared with the prior art, the invention has the following features:
Measurement cavity configuration provided by the invention is simple, measures the distribution of intracavitary electric field by using multi-electrode optimization to improve electrostatic
Collecting method emanometer is to positively charged218Po collection efficiency improves the detectivity of emanometer.
Detailed construction of the invention is further described below in conjunction with the drawings and specific embodiments.
Detailed description of the invention
Attached drawing 1 is the measurement cavity configuration schematic diagram equipped with an annular measurement circle；
Attached drawing 2 is the A-A cross-sectional view of attached drawing 1；
Attached drawing 3 is measurement process system schematic；
Attached drawing 4 is the B-B cross-sectional view of attached drawing 3；
Attached drawing 5 is to set that there are three the measurement cavity configuration schematic diagrames of annular measurement circle.
Specific embodiment
Embodiment one, multi-electrode improve positively charged218The measurement chamber of Po collection efficiency, including cavity 1, insulated end cover 2,
Semiconductor detector 3 and electrode 5.
The inner wall of cavity 1 is conductive layer 1-3, and siding is equipped with escape pipe 1-1 and air inlet pipe 1-2,1 cavity heights of cavity
It is 6 centimetres.
Semiconductor detector 3 is mounted on the centre on insulated end cover 2, and three electrodes 4 surround semiconductor detector 3
It installs on insulated end cover 2 in a ring, forms first annular measurement circle 7, on first annular survey circle 7, in two neighboring electrode 4
Heart distance is 6 centimetres, and the center of electrode 4 is from being 6 centimetres with a distance from wall conductive layer 1-3 in cavity 1.
End cap 2 is fixed by screws in the open end of cavity 1.
Embodiment two, multi-electrode improve positively charged218The measurement chamber of Po collection efficiency, including cavity 1, insulated end cover 2,
Semiconductor detector 3 and electrode 5.
The inner wall of cavity 1 is conductive layer 1-3, and siding is equipped with escape pipe 1-1 and air inlet pipe 1-2,1 cavity heights of cavity
It is 15 centimetres.
Semiconductor detector 3 is mounted on the centre on insulated end cover 2, and four electrodes 4 surround semiconductor detector 3
It installs on insulated end cover 2 in a ring, forms first annular measurement circle 7, on first annular survey circle 7, in two neighboring electrode 4
Heart distance is 10 centimetres, and the center of electrode 4 is from being 10 centimetres with a distance from wall conductive layer 1-3 in cavity 1.
End cap 2 is fixed by screws in the open end of cavity 1.
Embodiment three, multi-electrode improve positively charged218The measurement chamber of Po collection efficiency, including cavity 1, insulated end cover 2,
Semiconductor detector 3 and electrode 5.
The inner wall of cavity 1 is conductive layer 1-3, and siding is equipped with escape pipe 1-1 and air inlet pipe 1-2,1 cavity heights of cavity
It is 25 centimetres.
Semiconductor detector 3 is mounted on the centre on insulated end cover 2, and five electrodes 4 surround semiconductor detector 3
It installs on insulated end cover 2 in a ring, forms first annular measurement circle 7, on first annular survey circle 7, in two neighboring electrode 4
Heart distance is 15 centimetres, and the center of electrode 4 is from being 15 centimetres with a distance from wall conductive layer 1-3 in cavity 1.
End cap 2 is fixed by screws in the open end of cavity 1.
Electrostatic field is improved to positively charged using measurement chamber described in embodiment one, embodiment two and embodiment three218Po's
The method of collection efficiency is as follows:
A, the air inlet pipe 1-2 on cavity 1 is connect with radon chamber, the conductive layer 1-3 difference of 1 inner wall of semiconductor detector 3 and cavity
It is connect by conducting wire with high-pressure modular 6, electrode 4 is connect with high-pressure modular 6 again after being connected by conducting wire, on sampling pump 5 and cavity 1
Escape pipe 1-1 connection, open sampling pump 5, the air of radon chamber is introduced, so that the radon consistence in cavity 1 is identical as in radon chamber.
B, voltage between 1 inner conducting layer 1-3 of cavity and semiconductor detector 3 is adjusted by high-pressure modular 6, utilizes secondary instrument
Table obtains what semiconductor detector 3 measured218Po decays counting rate, and counting rate increases with the raising of voltage, when continuing to be turned up
When voltage and counting rate are basically unchanged, stop adjusting voltage between conductive layer 1-3 and semiconductor detector 3.
C, electricity between 1 inner conducting layer 1-3 of cavity and 7 top electrode of first annular measurement circle, 4 surface is adjusted by high-pressure modular 6
Pressure, obtains what semiconductor detector measured using secondary meter218Po decay counting rate stops after counting rate reaches maximum value
Only adjust voltage between conductive layer 1-3 and 4 surface of electrode.
Electrostatic field is improved to positively charged by the above method218Then the collection efficiency of Po is half-and-half led using secondary meter
The measurement of bulk detector 3 obtains218Po decay counts progress analytical calculation and obtains the concentration of radon.
Example IV, the present embodiment are compared with embodiment one, on insulated end cover 2, around first annular measurement circle 7, add
Two annular measurement circles, the respectively second annular measurement circle 8 and third annular measurement circle 9, the interval of each annular measurement circle
The centre distance of two neighboring electrode 4 is 6 centimetres on respectively 6 centimetres, annular measurement circle, in third annular measurement circle 9
The center of electrode 4 from cavity 1 with a distance from wall conductive layer 1-3 be 6 centimetres.
Embodiment five, the present embodiment are compared with embodiment two, on insulated end cover 2, around first annular measurement circle 7,
It is additionally arranged two annular measurement circles, the respectively second annular measurement circle 8 and third annular measurement circle 9, each annular measurement circle
Spacing distance is respectively 10 centimetres, and the centre distance of two neighboring electrode 4 is 10 centimetres in annular measurement circle, the measurement of third annular
The centers of 9 top electrodes 4 is enclosed from a distance from wall conductive layer 1-3 being 10 centimetres in cavity 1.
Embodiment six, the present embodiment are compared with embodiment three, on insulated end cover 2, around first annular measurement circle 7,
It is additionally arranged two annular measurement circles, the respectively second annular measurement circle 8 and third annular measurement circle 9, each annular measurement circle
Spacing distance is respectively 15 centimetres, and the centre distance of two neighboring electrode 4 is 15 centimetres in annular measurement circle, the measurement of third annular
Enclosing shortest distance L1 of the center of 9 top electrodes 4 from wall conductive layer 1-3 in cavity 1 is 15 centimetres.
Electrostatic field is improved to positively charged using measurement chamber described in example IV, embodiment five and embodiment six218Po's
The method of collection efficiency is as follows:
A, the air inlet pipe 1-2 on cavity 1 is connect with radon chamber, the conductive layer 1-3 difference of 1 inner wall of semiconductor detector 3 and cavity
It being connect by conducting wire with high-pressure modular 6, the electrode 4 in each annular measurement circle is connect with high-pressure modular 6 again after being connected by conducting wire,
Sampling pump 5 is connect with the escape pipe 1-1 on cavity 1, is opened sampling pump 5, the air of radon chamber is introduced, so that the radon in cavity 1 is dense
It spends identical as in radon chamber.
B, voltage between 1 inner conducting layer 1-3 of cavity and semiconductor detector 3 is adjusted by high-pressure modular 6, utilizes secondary instrument
Table obtains what semiconductor detector 3 measured218Po decays counting rate, and counting rate increases with the raising of voltage, when continuing to be turned up
When voltage and counting rate are basically unchanged, stop adjusting voltage between conductive layer 1-3 and semiconductor detector 3.
C, it is adjusted between 1 inner conducting layer 1-3 of cavity and annular 4 surface of measurement circle top electrode of third by high-pressure modular 6
Voltage obtains what semiconductor detector 3 measured using secondary meter218Po decay counting rate, when counting rate reaches maximum value
Afterwards, stop adjusting voltage between conductive layer 1-3 and annular 4 surface of measurement circle top electrode of third.
D, it is adjusted between 1 inner conducting layer 1-3 of cavity and second annular 4 surface of measurement circle top electrode by high-pressure modular 6
Voltage obtains what semiconductor detector 3 measured using secondary meter218Po decay counting rate, when counting rate reaches maximum value
Afterwards, stop adjusting voltage between conductive layer 1-3 and second annular 4 surface of measurement circle top electrode.
E, it is adjusted between 1 inner conducting layer 1-3 of cavity and first annular 4 surface of measurement circle top electrode by high-pressure modular 6
Voltage obtains what semiconductor detector 3 measured using secondary meter218Po decay counting rate, when counting rate reaches maximum value
Afterwards, stop adjusting voltage between conductive layer 1-3 and first annular 4 surface of measurement circle top electrode.
It can be further improved electrostatic field to positively charged by the above method218Then the collection efficiency of Po utilizes secondary instrument
Table obtains the measurement of semiconductor detector 3218Po decay counts progress analytical calculation and obtains the concentration of radon.
Claims (4)
1. multi-electrode improves positively charged218The measurement chamber of Po collection efficiency, it is characterized in that: including cavity, insulated end cover, partly leading
Bulk detector and electrode；
The inner wall of cavity is conductive layer, and siding is equipped with escape pipe and air inlet pipe, and cavity cavity heights are 6-25 centimetres；
Semiconductor detector is mounted on the centre on insulated end cover, and plurality of electrodes is pacified in a ring around semiconductor detector
It fills on insulated end cover, forms first annular measurement circle, on first annular survey circle, the centre distance of two neighboring electrode is 6-15
Centimetre, the center of electrode is from being 6-15 centimetres with a distance from wall conductive layer in cavity；
End cap is fixed by screws in the open end of cavity.
2. improving electrostatic field to positively charged using measurement chamber as described in claim 1218The method of the collection efficiency of Po,
It is characterized in:
A, the air inlet pipe on cavity is connect with radon chamber, the conductive layer of semiconductor detector and cavity inner wall pass through respectively conducting wire with
High-pressure modular connection, electrode are connect with high-pressure modular again after being connected by conducting wire, and sampling pump is connect with the escape pipe on cavity, is opened
Sampling pump is opened, the air of radon chamber is introduced, so that the intracorporal radon consistence of chamber is identical as in radon chamber；
B, it by voltage between conductive layer and semiconductor detector in high-pressure modular adjusting cavity body, is partly led using secondary meter
What bulk detector measured218Po decays counting rate, and counting rate increases with the raising of voltage, counts when continuing voltage is turned up
When rate is basically unchanged, stop adjusting voltage between conductive layer and semiconductor detector；
C, by the way that voltage, utilization are secondary between conductive layer and first annular measurement circle upper electrode surface in high-pressure modular adjusting cavity body
Instrument obtains what semiconductor detector measured218Po decay counting rate stops adjusting conductive after counting rate reaches maximum value
Voltage between layer and electrode surface；
Electrostatic field is improved to positively charged by the above method218Then the collection efficiency of Po is visited semiconductor using secondary meter
Survey what device measurement obtained218Po decay counts progress analytical calculation and obtains the concentration of radon.
3. measurement chamber as described in claim 1, it is characterized in that:, around first annular measurement circle, being added on insulated end cover
By a plurality of annular measurement circles being made of plurality of electrodes, the spacing distance of annular measurement circle is respectively 6-15 centimetres, annular
The centre distance of two neighboring electrode is 6-15 centimetres in measurement circle, and the center of outmost turns annular measurement circle top electrode is from cavity
The distance of wall conductive layer is 6-15 centimetres.
4. improving electrostatic field to positively charged using measurement chamber as claimed in claim 3218The method of the collection efficiency of Po,
It is characterized in:
A, the air inlet pipe on cavity 1 is connect with radon chamber, the conductive layer of semiconductor detector and cavity inner wall passes through conducting wire respectively
It is connect with high-pressure modular, the electrode in each annular measurement circle is connect with high-pressure modular again after being connected by conducting wire, sampling pump and chamber
Escape pipe connection on body, opens sampling pump, the air of radon chamber is introduced, so that the intracorporal radon consistence of chamber is identical as in radon chamber；
B, it by voltage between conductive layer and semiconductor detector in high-pressure modular adjusting cavity body, is partly led using secondary meter
What bulk detector measured218Po decays counting rate, and counting rate increases with the raising of voltage, counts when continuing voltage is turned up
When rate is basically unchanged, stop adjusting voltage between conductive layer and semiconductor detector；
C, voltage, benefit between conductive layer and each annular measurement circle upper electrode surface are successively distinguished in adjusting cavity body by high-pressure modular
Obtain what semiconductor detector measured with secondary meter218Po decay counting rate, when the counting rate in each annular measurement circle reaches
After maximum value, stop adjusting voltage between conductive layer and annular measurement circle upper electrode surface；
It can be further improved electrostatic field to positively charged by the above method218Then the collection efficiency of Po utilizes secondary meter pair
The measurement of semiconductor detector 3 obtains218Po decay counts progress analytical calculation and obtains the concentration of radon.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113484898A (en) * | 2021-06-19 | 2021-10-08 | 衡阳师范学院 | Device and method for measuring Po-216 mobility and neutralization rate by electrostatic collection method |
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