CN109307880B - Multiple electrode positive charging 218 Po collection efficiency measurement cavity and method - Google Patents

Multiple electrode positive charging 218 Po collection efficiency measurement cavity and method Download PDF

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CN109307880B
CN109307880B CN201811359464.6A CN201811359464A CN109307880B CN 109307880 B CN109307880 B CN 109307880B CN 201811359464 A CN201811359464 A CN 201811359464A CN 109307880 B CN109307880 B CN 109307880B
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cavity
semiconductor detector
voltage
annular measuring
end cover
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CN109307880A (en
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袁红志
谭延亮
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Hengyang Normal University
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Hengyang Normal University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/167Measuring radioactive content of objects, e.g. contamination

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Abstract

Multiple electrode positive charging 218 A measuring cavity and method for Po collecting efficiency is characterized in that the inner wall of the measuring cavity is a conductive layer, and an air outlet pipe and an air inlet pipe are arranged on the wall plate of the measuring cavityThe semiconductor detector is arranged in the center of the insulating end cover, the plurality of electrodes are annularly arranged on the insulating end cover around the semiconductor detector to form a first annular measuring ring, and the end cover is fixed at the opening end of the cavity. The measurement method is as follows: the upper air inlet pipe of the cavity is connected with the radon chamber, the semiconductor detector, the conducting layer and the electrodes connected in series are respectively connected with the high-voltage module through conducting wires, the sampling pump is connected with the air outlet pipe, the sampling pump is started, and air in the radon chamber is introduced, so that the radon concentration in the cavity is the same as that in the radon chamber. The high voltage module respectively adjusts the voltage between the conductive layer and the semiconductor detector and between the conductive layer and the electrode surface, and the secondary instrument is used for obtaining the voltage measured by the semiconductor detector 218 Po decay count rate, measured by semiconductor detector with secondary instrument 218 And analyzing and calculating the Po decay count to obtain the radon concentration.

Description

Multiple electrode positive charging 218 Po collection efficiency measurement cavity and method
Technical Field
The invention relates to a nuclear radiation detection technology, in particular to a method for effectively improving the positive charge of an electrostatic collection radon measuring instrument by adopting multiple electrodes 218 A measuring cavity and a measuring method for Po collection efficiency.
Background
Radon in the environment ( 222 Rn) is the main source of natural radiation to which humans are exposed. There are many radon measuring methods and instruments based on different measuring principles, among them, the electrostatic collecting radon measuring instrument has the ability of energy spectrum resolution and discharges because of its high automation degree 220 Rn interference is widely applied. The electrostatic collection method is to have a measuring cavity, the measuring cavity is generally hemispherical or cylindrical, a semiconductor detector is arranged at the upper part of the measuring cavity, and high voltage is applied between the wall of the measuring cavity and the semiconductor detector to form an electrostatic field. The radon filtered out daughter is pumped into the measuring cavity along with the air in the environment, and continuously decays in the measuring cavity to generate positively charged radon 218 Po, positively charged 218 Po will be collected on the surface of the semiconductor detector under the influence of the electrostatic field. Positively charged during collection 218 Po collides with molecules and ions in the air, and if it collides with negatively charged OH - Ion collisions can recombine into electrically neutral particles that cannot be collected by the electrostatic field at the surface of the semiconductor detector, resulting in a reduction in collection efficiency. The current theoretical simulation and experiment show that: the electric field strength near the semiconductor detector surface of such a measurement cavity is very high, while the electric field strength near the wall of the measurement cavity is small. This results in positively charged radon decay near the walls of the measurement chamber 218 The drift velocity of Po under the action of electrostatic field is low, the collection time is long, and the Po and the OH with negative electricity are in the collection process - The probability of ion recombination is high, so that the ions are positively charged 218 The efficiency of collecting Po on the surface of the detector by an electrostatic field is not high, and the detection sensitivity of the radon detector is low.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a method for effectively improving the positive charge of an electrostatic collection radon measuring instrument by adopting multiple electrodes 218 A measuring cavity and a measuring method for Po collection efficiency.
The technical scheme of the invention is as follows: multiple electrode positive charging 218 The measuring cavity for Po collection efficiency comprises a cavity body, an insulating end cover, a semiconductor detector and an electrode.
The inner wall of the cavity is a conductive layer, the wall plate is provided with an air outlet pipe and an air inlet pipe, and the height of the cavity in the cavity is 6-25 cm.
The semiconductor detector is arranged at the central part of the insulating end cover, the plurality of electrodes are annularly arranged on the insulating end cover around the semiconductor detector to form a first annular measuring ring, the distance between the centers of two adjacent electrodes on the first annular measuring ring is 6-15 cm, and the distance between the center of the electrode and the conducting layer on the inner wall of the cavity is 6-15 cm.
The end cover is fixed at the opening end of the cavity through screws.
The measuring cavity is adopted to improve the electrostatic field to positively charge 218 The method for the collection efficiency of Po is as follows:
A. the air inlet pipe on the cavity is connected with the radon chamber, the semiconductor detector and the conducting layer on the inner wall of the cavity are respectively connected with the high-voltage module through leads, the electrodes are connected with the high-voltage module after being connected in series through the leads, the sampling pump is connected with the air outlet pipe on the cavity, the sampling pump is started, and air in the radon chamber is introduced, so that the radon concentration in the cavity is the same as that in the radon chamber.
B. The voltage between the conductive layer in the cavity and the semiconductor detector is adjusted through the high-voltage module, and the voltage measured by the semiconductor detector is obtained by utilizing a secondary instrument 218 The count rate of Po decay increases with increasing voltageAnd when the voltage is continuously adjusted to be high and the counting rate is basically unchanged, the adjustment of the voltage between the conducting layer and the semiconductor detector is stopped.
C. The voltage between the conducting layer in the cavity and the upper electrode surface of the first annular measuring ring is adjusted through the high-voltage module, and the voltage measured by the semiconductor detector is obtained by utilizing a secondary instrument 218 And the Po decay counting rate, and stopping regulating the voltage between the conducting layer and the surface of the electrode when the counting rate reaches the maximum value.
By increasing the electrostatic field to positive charge by the above method 218 Po collection efficiency, and measurement of semiconductor detector by secondary instrument 218 And analyzing and calculating the Po decay count to obtain the radon concentration.
The further technical scheme of the invention is as follows: and a plurality of annular measuring rings consisting of a plurality of electrodes are additionally arranged on the insulating end cover around the first annular measuring ring, the spacing distance of the annular measuring rings is 6-15 cm respectively, the central distance of two adjacent electrodes on the annular measuring rings is 6-15 cm, and the distance from the center of the electrode on the outermost annular measuring ring to the conducting layer on the inner wall of the cavity is 6-15 cm.
The measuring cavity is adopted to improve the electrostatic field to positively charge 218 The method for the collection efficiency of Po is as follows:
A. the air inlet pipe on the cavity is connected with the radon chamber, the semiconductor detector and the conducting layer on the inner wall of the cavity are respectively connected with the high-voltage module through leads, the electrodes on the annular measuring rings are connected with the high-voltage module after being connected in series through the leads, the sampling pump is connected with the air outlet pipe on the cavity, the sampling pump is started, and air in the radon chamber is introduced, so that the radon concentration in the cavity is the same as that in the radon chamber.
B. The voltage between the conductive layer in the cavity and the semiconductor detector is adjusted through the high-voltage module, and the voltage measured by the semiconductor detector is obtained by utilizing a secondary instrument 218 And the counting rate is increased along with the increase of the voltage, and when the voltage is continuously increased and the counting rate is basically unchanged, the voltage between the conductive layer and the semiconductor detector is stopped being regulated.
C. The conducting layers in the cavity and the power on each annular measuring ring are sequentially and respectively adjusted through the high-voltage moduleVoltage between pole surfaces, measured by semiconductor detectors using secondary instruments 218 And (4) the Po decays to obtain a counting rate, and when the counting rate on each annular measuring ring reaches a maximum value, stopping adjusting the voltage between the conductive layer and the upper electrode surface of each annular measuring ring.
The method can further improve the electrostatic field to be positively charged 218 Po collection efficiency, and then measured by the semiconductor detector 3 using a secondary meter 218 And analyzing and calculating the Po decay count to obtain the radon concentration.
Compared with the prior art, the invention has the following characteristics:
the measuring cavity provided by the invention has a simple structure, and the distribution of electric fields in the measuring cavity is optimized by adopting multiple electrodes to improve the positive charge of the electrostatic collection method radon detector 218 Po collection efficiency, and the detection sensitivity of the emanometer is improved.
The detailed structure of the present invention will be further described with reference to the accompanying drawings and the detailed description.
Drawings
FIG. 1 is a schematic view of a measuring chamber with an annular measuring ring;
FIG. 2 is a cross-sectional view A-A of FIG. 1;
FIG. 3 is a schematic view of a measurement process system;
FIG. 4 is a cross-sectional view B-B of FIG. 3;
fig. 5 is a schematic structural diagram of a measuring cavity provided with three annular measuring rings.
Detailed Description
Example one, multiple electrodes to increase Positive Charge 218 The measuring cavity for Po collection efficiency comprises a cavity body 1, an insulating end cover 2, a semiconductor detector 3 and an electrode 5.
The inner wall of the cavity 1 is a conductive layer 1-3, the wall plate is provided with an air outlet pipe 1-1 and an air inlet pipe 1-2, and the height of the inner cavity of the cavity 1 is 6 cm.
The semiconductor detector 3 is arranged at the central part of the insulating end cover 2, the three electrodes 4 are annularly arranged on the insulating end cover 2 around the semiconductor detector 3 to form a first annular measuring ring 7, the distance between the centers of two adjacent electrodes 4 is 6 cm on the first annular measuring ring 7, and the distance between the center of the electrode 4 and the conducting layer 1-3 on the inner wall of the cavity 1 is 6 cm.
The end cap 2 is fixed at the opening end of the cavity 1 through screws.
EXAMPLE two, multiple electrodes to increase the positive charging 218 The measuring cavity for Po collection efficiency comprises a cavity body 1, an insulating end cover 2, a semiconductor detector 3 and an electrode 5.
The inner wall of the cavity 1 is a conductive layer 1-3, the wall plate is provided with an air outlet pipe 1-1 and an air inlet pipe 1-2, and the height of the inner cavity of the cavity 1 is 15 cm.
The semiconductor detector 3 is arranged at the central part of the insulating end cover 2, the four electrodes 4 are annularly arranged on the insulating end cover 2 around the semiconductor detector 3 to form a first annular measuring ring 7, the distance between the centers of two adjacent electrodes 4 is 10 cm on the first annular measuring ring 7, and the distance between the center of each electrode 4 and the conducting layer 1-3 on the inner wall of the cavity 1 is 10 cm.
The end cap 2 is fixed at the opening end of the cavity 1 through screws.
EXAMPLE III multiple electrode increasing Positive charging 218 The measuring cavity for Po collection efficiency comprises a cavity body 1, an insulating end cover 2, a semiconductor detector 3 and an electrode 5.
The inner wall of the cavity 1 is a conductive layer 1-3, the wall plate is provided with an air outlet pipe 1-1 and an air inlet pipe 1-2, and the height of the inner cavity of the cavity 1 is 25 cm.
The semiconductor detector 3 is arranged at the central part of the insulating end cover 2, the five electrodes 4 are annularly arranged on the insulating end cover 2 around the semiconductor detector 3 to form a first annular measuring ring 7, the distance between the centers of two adjacent electrodes 4 is 15 cm on the first annular measuring ring 7, and the distance between the center of each electrode 4 and the conducting layer 1-3 on the inner wall of the cavity 1 is 15 cm.
The end cap 2 is fixed at the opening end of the cavity 1 through screws.
The measuring cavities described in the first embodiment, the second embodiment and the third embodiment are adopted to increase the electrostatic field to be positively charged 218 The method for the collection efficiency of Po is as follows:
A. the method comprises the steps of connecting an air inlet pipe 1-2 on a cavity 1 with a radon chamber, connecting a semiconductor detector 3 and a conductive layer 1-3 on the inner wall of the cavity 1 with a high-voltage module 6 through leads respectively, connecting an electrode 4 with the high-voltage module 6 after being connected in series through the leads, connecting a sampling pump 5 with an air outlet pipe 1-1 on the cavity 1, starting the sampling pump 5, and introducing air in the radon chamber to enable the radon concentration in the cavity 1 to be the same as that in the radon chamber.
B. The voltage between the conductive layers 1-3 in the cavity 1 and the semiconductor detector 3 is adjusted through the high-voltage module 6, and the voltage measured by the semiconductor detector 3 is obtained by using a secondary instrument 218 The count rate increases with increasing voltage, and when the voltage is continuously increased and the count rate is substantially unchanged, the adjustment of the voltage between the conductive layers 1-3 and the semiconductor detector 3 is stopped.
C. The voltage between the conducting layers 1-3 in the cavity 1 and the surface of the electrode 4 on the first annular measuring ring 7 is adjusted by the high-voltage module 6, and the voltage measured by the semiconductor detector is obtained by using a secondary instrument 218 Po decay counting rate, when the counting rate reaches the maximum value, the voltage between the conductive layers 1-3 and the surface of the electrode 4 is stopped being regulated.
By increasing the electrostatic field to positive charge by the above method 218 Po collection efficiency, and then measured by the semiconductor detector 3 using a secondary meter 218 And analyzing and calculating the Po decay count to obtain the radon concentration.
In the fourth embodiment, compared with the first embodiment, two annular measuring rings are additionally arranged on the insulating end cover 2 around the first annular measuring ring 7, the two annular measuring rings are respectively a second annular measuring ring 8 and a third annular measuring ring 9, the spacing distance between each annular measuring ring is 6 cm, the distance between the centers of two adjacent electrodes 4 on the annular measuring rings is 6 cm, and the distance between the center of the electrode 4 on the third annular measuring ring 9 and the conducting layer 1-3 on the inner wall of the cavity 1 is 6 cm.
In the fifth embodiment, compared with the second embodiment, two annular measuring rings, namely a second annular measuring ring 8 and a third annular measuring ring 9, are additionally arranged on the insulating end cover 2 around the first annular measuring ring 7, the spacing distance of each annular measuring ring is respectively 10 cm, the distance between the centers of two adjacent electrodes 4 on the annular measuring rings is 10 cm, and the distance between the center of the electrode 4 on the third annular measuring ring 9 and the conductive layer 1-3 on the inner wall of the cavity 1 is 10 cm.
In the sixth embodiment, compared with the third embodiment, two annular measuring rings, namely a second annular measuring ring 8 and a third annular measuring ring 9, are additionally arranged on the insulating end cover 2 around the first annular measuring ring 7, the spacing distance between each annular measuring ring is 15 cm, the distance between the centers of two adjacent electrodes 4 on the annular measuring rings is 15 cm, and the shortest distance L1 between the center of the electrode 4 on the third annular measuring ring 9 and the conductive layer 1-3 on the inner wall of the cavity 1 is 15 cm.
The measuring cavities described in the fourth embodiment, the fifth embodiment and the sixth embodiment are adopted to improve the electrostatic field to be positively charged 218 The method for the collection efficiency of Po is as follows:
A. an air inlet pipe 1-2 on a cavity 1 is connected with a radon chamber, a semiconductor detector 3 and a conducting layer 1-3 on the inner wall of the cavity 1 are respectively connected with a high-voltage module 6 through leads, electrodes 4 on each annular measuring ring are connected in series through the leads and then connected with the high-voltage module 6, a sampling pump 5 is connected with an air outlet pipe 1-1 on the cavity 1, the sampling pump 5 is started, and air in the radon chamber is introduced, so that the radon concentration in the cavity 1 is the same as that in the radon chamber.
B. The voltage between the conductive layers 1-3 in the cavity 1 and the semiconductor detector 3 is adjusted through the high-voltage module 6, and the voltage measured by the semiconductor detector 3 is obtained by using a secondary instrument 218 The count rate increases with increasing voltage, and when the voltage is continuously increased and the count rate is substantially unchanged, the adjustment of the voltage between the conductive layers 1-3 and the semiconductor detector 3 is stopped.
C. The voltage between the conductive layers 1-3 in the cavity 1 and the surface of the upper electrode 4 of the third annular measuring ring is adjusted through the high-voltage module 6, and the voltage measured by the semiconductor detector 3 is obtained by utilizing a secondary instrument 218 And the Po decay counting rate, and stopping regulating the voltage between the conductive layers 1-3 and the surface of the upper electrode 4 of the third annular measuring ring when the counting rate reaches the maximum value.
D. The voltage between the conductive layers 1-3 in the cavity 1 and the surface of the upper electrode 4 of the second annular measuring ring is adjusted through the high-voltage module 6, and the voltage measured by the semiconductor detector 3 is obtained by utilizing a secondary instrument 218 Po decay counting rate, stopping adjusting the conductive layer 1-3 and the conductive layer when the counting rate reaches the maximum valueThe second ring measures the voltage between the surfaces of the upper electrodes 4.
E. The voltage between the conducting layers 1-3 in the cavity 1 and the surface of the upper electrode 4 of the first annular measuring ring is adjusted through the high-voltage module 6, and the voltage measured by the semiconductor detector 3 is obtained by utilizing a secondary instrument 218 And the Po decay counting rate, and stopping regulating the voltage between the conductive layers 1-3 and the surface of the upper electrode 4 of the first annular measuring ring after the counting rate reaches the maximum value.
The method can further improve the electrostatic field to be positively charged 218 Po collection efficiency, and then measured by the semiconductor probe 3 using a secondary meter 218 And analyzing and calculating the Po decay count to obtain the radon concentration.

Claims (1)

1. Using multiple electrodes to increase positive charge 218 Po collection efficiency measurement cavity for increasing electrostatic field to positive charge 218 Po collection efficiency improving method based on multiple electrodes 218 The measuring cavity for Po collection efficiency comprises a cavity body, an insulating end cover, a semiconductor detector and an electrode;
the inner wall of the cavity is a conductive layer, the wall plate of the cavity is provided with an air outlet pipe and an air inlet pipe, and the height of the cavity in the cavity is 6-25 cm;
the semiconductor detector is arranged at the central part of the insulating end cover, the plurality of electrodes are annularly arranged on the insulating end cover around the semiconductor detector to form a first annular measuring ring, the distance between the centers of two adjacent electrodes on the first annular measuring ring is 6-15 cm, and the distance between the center of the electrode and the conducting layer on the inner wall of the cavity is 6-15 cm;
the insulating end cover is fixed at the opening end of the cavity through a screw, a first annular measuring ring is arranged on the insulating end cover in a surrounding mode, a plurality of annular measuring rings consisting of a plurality of electrodes are additionally arranged, the spacing distance between the annular measuring rings is 6-15 cm respectively, the distance between the centers of two adjacent electrodes on the annular measuring rings is 6-15 cm, and the distance between the center of the electrode on the outermost annular measuring ring and the conducting layer on the inner wall of the cavity is 6-15 cm;
the method is characterized in that:
A. connecting an air inlet pipe on the cavity with the radon chamber, respectively connecting the semiconductor detector and a conductive layer on the inner wall of the cavity with the high-voltage module through leads, connecting electrodes on the annular measuring rings with the high-voltage module after being connected in series through the leads, connecting the sampling pump with an air outlet pipe on the cavity, starting the sampling pump, and introducing air into the radon chamber to ensure that the radon concentration in the cavity is the same as that in the radon chamber;
B. the voltage between the conductive layer in the cavity and the semiconductor detector is adjusted through the high-voltage module, and the voltage measured by the semiconductor detector is obtained by utilizing a secondary instrument 218 The counting rate is increased along with the increase of the voltage, and when the voltage is continuously increased and the counting rate is basically unchanged, the voltage between the conductive layer and the semiconductor detector is stopped being adjusted;
C. the voltages between the conducting layer in the cavity and the upper electrode surface of each annular measuring ring are sequentially and respectively adjusted through the high-voltage module, and the voltages measured by the semiconductor detector are obtained by utilizing a secondary instrument 218 The Po decays the counting rate, when the counting rate on each annular measuring ring reaches the maximum value, the voltage between the conducting layer and the upper electrode surface of the annular measuring ring is stopped to be adjusted;
the method can further improve the electrostatic field to be positively charged 218 Po collection efficiency, and measurement of semiconductor detector by secondary instrument 218 And analyzing and calculating the Po decay count to obtain the radon concentration.
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CN113484898B (en) * 2021-06-19 2022-08-12 衡阳师范学院 Method for measuring Po-216 mobility and neutralization rate by electrostatic collection method

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