CN109254314B - With ring electrodes increasing positive charge218Po collection efficiency measurement cavity and method - Google Patents
With ring electrodes increasing positive charge218Po collection efficiency measurement cavity and method Download PDFInfo
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Abstract
With ring electrodes increasing positive charge218A measuring cavity for Po collection efficiency and a method thereof are disclosed, wherein the inner wall of the measuring cavity is a conductive layer, and an air outlet pipe and an air inlet pipe are arranged on the wall plateThe gas pipe, the center on insulating end cover is installed to the semiconductor detector, and first ring electrode is installed in insulating end cover lower part, and the terminal on the first ring electrode passes the upper portion of insulating end cover, and the end cover is fixed in the open end of cavity. The measurement method is as follows: the upper air inlet pipe of the cavity is connected with the radon chamber, the semiconductor detector, the conductive layer and the first annular electrode are respectively connected with the high-voltage module through wires, the sampling pump is connected with the air outlet pipe, the sampling pump is started, and air in the radon chamber is introduced, so that the radon concentration in the cavity is the same as that in the radon chamber. The high-voltage module respectively adjusts the voltage between the conductive layer and the surfaces of the semiconductor detector and the first annular electrode, and the secondary instrument is used for obtaining the voltage measured by the semiconductor detector218Po decay count rate, measured by semiconductor detector with secondary instrument218And analyzing and calculating the Po decay count to obtain the radon concentration.
Description
Technical Field
The invention relates to a nuclear radiation detection technology, in particular to a method for effectively improving the positive charge of an electrostatic collection radon measuring instrument by adopting an annular electrode218A measuring cavity and a measuring method for Po collection efficiency.
Background
Radon in the environment (222Rn) is the main source of natural radiation to which humans are exposed. There are many radon measuring methods and instruments based on different measuring principles, among them, the electrostatic collecting radon measuring instrument has the ability of energy spectrum resolution and discharges because of its high automation degree220Rn interference is widely applied. The electrostatic collection method is to have a measuring cavity, the measuring cavity is generally hemispherical or cylindrical, a semiconductor detector is arranged at the upper part of the measuring cavity, and high voltage is applied between the wall of the measuring cavity and the semiconductor detector to form an electrostatic field. Filtering off radon, pumping into the measuring cavity with air in the environment, continuously decaying in the measuring cavity to generate positively charged radon218Po, positively charged218Po will be collected on the surface of the semiconductor detector under the influence of the electrostatic field. Positively charged during collection218Po collides with molecules and ions in the air, and if it collides with negatively charged OH-Ion collisions can recombine into electrically neutral particles that cannot be collected by the electrostatic field at the surface of the semiconductor detector, resulting in a reduction in collection efficiency. The current theoretical simulation and experiment show that: the electric field strength near the surface of the semiconductor detector of such a measurement cavity is very high, while the electric field strength near the inner surface of the measurement cavity is small. This results in radon decay near the inner surface of the measurement chamberProduced positively charged218The drift velocity of Po under the action of electrostatic field is low, the collection time is long, and the Po and the OH with negative electricity are in the collection process-The ion recombination probability is higher, so that the ion is positively charged218The efficiency of collecting Po to the surface of the detector by an electrostatic field is not high, and the detection sensitivity of the radon detector is low.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a method for effectively improving the positive charge of an electrostatic collection method radon detector by adopting an annular electrode218A measuring cavity and a measuring method for Po collection efficiency.
The technical scheme of the invention is as follows: with ring electrodes increasing positive charge218The measuring cavity for Po collection efficiency comprises a cavity body, an insulating end cover, a semiconductor detector and a first annular electrode.
The inner wall of the cavity is a conductive layer, the inner diameter of the conductive layer is D2, an air outlet pipe and an air inlet pipe are arranged on the wall plate, and the height of the cavity in the cavity is 6-25 cm.
The semiconductor detector is arranged at the central part of the insulating end cover, the diameter of the probe of the semiconductor detector is D1, the first annular electrode is arranged at the lower part of the insulating end cover, the inner ring of the first annular electrode is larger than D1, the outer ring of the first annular electrode is smaller than D2, and the binding post on the first annular electrode penetrates through the insulating end cover and is exposed at the upper part of the insulating end cover.
The end cover is fixed at the opening end of the cavity through screws.
The measuring cavity is adopted to improve the electrostatic field to positively charge218The method for the collection efficiency of Po is as follows:
A. the air inlet pipe on the cavity is connected with the radon chamber, the semiconductor detector, the conducting layer on the inner wall of the cavity and the binding post on the first annular electrode are respectively connected with the high-voltage module through wires, the sampling pump is connected with the air outlet pipe on the cavity, the sampling pump is started, and air of the radon chamber is introduced, so that the radon concentration in the cavity is the same as that in the radon chamber.
B. The voltage between the conducting layer in the cavity and the semiconductor detector is adjusted through the high-voltage module, and the voltage measured by the semiconductor detector is obtained by utilizing a secondary instrument218And the counting rate is increased along with the increase of the voltage, and when the voltage is continuously increased and the counting rate is basically unchanged, the voltage between the conductive layer and the semiconductor detector is stopped being regulated.
C. The voltage between the conducting layer in the cavity and the surface of the first annular electrode is adjusted through the high-voltage module, and the voltage measured by the semiconductor detector is obtained by utilizing a secondary instrument218And Po decay counting rate, and stopping regulating the voltage between the conductive layer and the surface of the first annular electrode when the counting rate reaches the maximum value.
By increasing the electrostatic field to positive charge by the above method218Po collection efficiency, and measurement of semiconductor detector by secondary instrument218And analyzing and calculating the Po decay count to obtain the radon concentration.
The further technical scheme of the invention is as follows: and a plurality of annular electrodes are additionally arranged on the insulating end cover around the first annular electrode, the outer ring of the inner annular electrode is smaller than the inner ring of the outer annular electrode between two adjacent annular electrodes, and the outer ring of the outermost annular electrode is smaller than D2.
The measuring cavity is adopted to improve the electrostatic field to positively charge218The method for the collection efficiency of Po is as follows:
A. the air inlet pipe on the cavity is connected with the radon chamber, the semiconductor detector, the conducting layer on the inner wall of the cavity and the binding posts on the annular electrodes are respectively connected with the high-voltage module through conducting wires, the sampling pump is connected with the air outlet pipe on the cavity, the sampling pump is started, and air in the radon chamber is introduced, so that the radon concentration in the cavity is the same as that in the radon chamber.
B. The voltage between the conductive layer in the cavity and the semiconductor detector is adjusted through the high-voltage module, and the voltage measured by the semiconductor detector is obtained by utilizing a secondary instrument218And the counting rate is increased along with the increase of the voltage, and when the voltage is continuously increased and the counting rate is basically unchanged, the voltage between the conductive layer and the semiconductor detector is stopped being regulated.
C. The voltage between the conducting layer in the cavity and the surface of each annular electrode is sequentially and respectively regulated through the high-voltage module, and the voltage measured by the semiconductor detector is obtained by utilizing a secondary instrument218And Po decay counting rate, and stopping regulating the voltage between the conductive layer and the surface of each annular electrode when the counting rate reaches the maximum value.
The method can further improve the electrostatic field to be positively charged218Po collection efficiency, and then measured by a secondary meter for a semiconductor detector218And analyzing and calculating the Po decay count to obtain the radon concentration.
Compared with the prior art, the invention has the following characteristics:
the measuring cavity provided by the invention has a simple structure, and the distribution of electric fields in the measuring cavity is optimized by adopting the annular electrode to improve the positive charge of the electrostatic collection method radon detector218Po collection efficiency, and the detection sensitivity of the emanometer is improved.
The detailed structure of the present invention will be further described with reference to the accompanying drawings and the detailed description.
Drawings
FIG. 1 is a schematic view of a measurement chamber with an annular electrode;
FIG. 2 is a cross-sectional view A-A of FIG. 1;
FIG. 3 is a schematic view of a measurement process system;
FIG. 4 is a sectional view taken along line B-B of FIG. 3;
fig. 5 is a schematic view of a measuring chamber with three ring electrodes.
Detailed Description
EXAMPLE I annular electrode to increase Positive Charge218The measuring cavity for Po collection efficiency comprises a cavity body 1, an insulating end cover 2, a semiconductor detector 3 and a first annular electrode 4.
The inner wall of the cavity 1 is a conductive layer 1-3, the inner diameter of the conductive layer 1-3 is D2, the wall plate is provided with an air outlet pipe 1-1 and an air inlet pipe 1-2, and the height of the inner cavity of the cavity 1 is 6 cm.
The semiconductor detector 3 is arranged at the central part of the insulating end cover 2, the diameter of a probe 3-1 of the semiconductor detector 3 is D1, the first annular electrode 4 is arranged at the lower part of the insulating end cover 2, the inner circle of the first annular electrode 4 is larger than D1, the outer circle of the first annular electrode 4 is smaller than D2, and the binding post 4-1 on the first annular electrode 4 penetrates through the insulating end cover 2 and is exposed at the upper part of the insulating end cover 2.
The end cap 2 is fixed at the opening end of the cavity 1 through screws.
The second embodiment is different from the first embodiment in that: the height of the inner cavity of the cavity 1 is 15 cm.
The third embodiment is different from the first embodiment in that: the height of the inner cavity of the cavity 1 is 25 cm.
The measuring cavities described in the first embodiment, the second embodiment and the third embodiment are adopted to increase the electrostatic field to be positively charged218The method for the collection efficiency of Po is as follows:
A. an air inlet pipe 1-2 on a cavity 1 is connected with a radon chamber, a semiconductor detector 3, a conducting layer 1-3 on the inner wall of the cavity and a binding post 4-1 on a first annular electrode 4 are respectively connected with a high-voltage module 6 through a conducting wire, a sampling pump 5 is connected with an air outlet pipe 1-1 on the cavity 1, the sampling pump 5 is started, and air in the radon chamber is introduced, so that the radon concentration in the cavity 1 is the same as that in the radon chamber.
B. The voltage between the conductive layers 1-3 in the cavity 1 and the semiconductor detector 3 is adjusted through the high-voltage module 6, and the voltage measured by the semiconductor detector 3 is obtained by using a secondary instrument218The Po decays, the count rate increases with increasing voltage, and when the voltage continues to be increased while the count rate is substantially unchanged, the adjustment of the voltage between the conductive layers 1-3 and the semiconductor detector 3 is stopped.
C. The voltage between the conducting layers 1-3 in the cavity 1 and the surface of the first annular electrode 4 is adjusted through the high-voltage module 6, and the voltage measured by the semiconductor detector 3 is obtained by utilizing a secondary instrument218Po decay count rate, and stopping adjusting the voltage between the conductive layers 1-3 and the surface of the first ring electrode 4 when the count rate reaches a maximum value.
By increasing the electrostatic field to positive charge by the above method218Po collection efficiency, and then measured by the semiconductor detector 3 using a secondary meter218And analyzing and calculating the Po decay count to obtain the radon concentration.
The fourth embodiment is different from the first embodiment in that: two annular electrodes, namely a second annular electrode 7 and a third annular electrode 8, are additionally arranged on the insulating end cover 2 around the first annular electrode 4, the inner ring of the second annular electrode 7 is larger than the outer ring of the first annular electrode 4, the outer ring of the second annular electrode 7 is smaller than the inner ring of the third annular electrode 8, and the outer ring of the third annular electrode 8 is smaller than D2.
The fifth embodiment is different from the fourth embodiment in that: the height of the inner cavity of the cavity 1 is 15 cm.
The sixth embodiment is different from the fourth embodiment in that: the height of the inner cavity of the cavity 1 is 25 cm.
The measuring cavities described in the fourth embodiment, the fifth embodiment and the sixth embodiment are adopted to improve the electrostatic field to be positively charged218The method for the collection efficiency of Po is as follows:
A. an air inlet pipe 1-2 on a cavity 1 is connected with a radon chamber, a semiconductor detector 3, a conducting layer 1-3 on the inner wall of the cavity 1, a binding post 4-1 of a first annular electrode 4, a binding post 7-1 of a second annular electrode 7 and a binding post 8-1 of a third annular electrode 8 are respectively connected with a high-voltage module 6 through conducting wires, a sampling pump 5 is connected with an air outlet pipe 1-1 on the cavity 1, the sampling pump 5 is started, and air in the radon chamber is introduced, so that the radon concentration in the cavity 1 is the same as that in the radon chamber.
B. The voltage between the conductive layers 1-3 in the cavity 1 and the semiconductor detector 3 is adjusted through the high-voltage module 6, and the voltage measured by the semiconductor detector 3 is obtained by using a secondary instrument218The Po decays, the count rate increases with increasing voltage, and when the voltage continues to be increased while the count rate is substantially unchanged, the adjustment of the voltage between the conductive layers 1-3 and the semiconductor detector 3 is stopped.
C. The voltage between the conducting layers 1-3 in the cavity 1 and the surface of the first annular electrode 4 is adjusted through the high-voltage module 6, and the voltage measured by the semiconductor detector 3 is obtained by utilizing a secondary instrument218Po decay count rate, and stopping adjusting the voltage between the conductive layers 1-3 and the surface of the first ring electrode 4 when the count rate reaches a maximum value.
D. The voltage between the conducting layers 1-3 in the cavity 1 and the surface of the second annular electrode 7 is adjusted through the high-voltage module 6, and the voltage measured by the semiconductor detector 3 is obtained by utilizing a secondary instrument218Po decay count rate, stopping when the count rate reaches a maximum valueThe voltage between the conductive layers 1-3 and the surface of the second ring electrode 7 is adjusted.
E. The voltage between the conductive layers 1-3 in the cavity 1 and the surface of the annular electrode 8 is adjusted through the high-voltage module 6, and the voltage measured by the semiconductor detector 3 is obtained by utilizing a secondary instrument218Po decay count rate, and stopping adjusting the voltage between the conductive layers 1-3 and the surface of the third annular electrode 8 when the count rate reaches a maximum value.
The method can further improve the electrostatic field to be positively charged218Po collection efficiency, and then measured by the semiconductor detector 3 using a secondary meter218And analyzing and calculating the Po decay count to obtain the radon concentration.
Claims (2)
1. Using ring electrodes to increase positive charge218Po collection efficiency measurement cavity for increasing electrostatic field to positive charge218Method for increasing the collection efficiency of Po, said ring electrode being positively charged218The measuring cavity of Po collection efficiency comprises a cavity body, an insulating end cover, a semiconductor detector and a first annular electrode;
the inner wall of the cavity is a conductive layer, the inner diameter of the conductive layer is D2, the wall plate is provided with an air outlet pipe and an air inlet pipe, and the height of the cavity in the cavity is 6-25 cm;
the semiconductor detector is arranged at the central part of the insulating end cover, the diameter of the probe of the semiconductor detector is D1, the first annular electrode is arranged at the lower part of the insulating end cover, the inner ring of the first annular electrode is larger than D1, the outer ring of the first annular electrode is smaller than D2, and the binding post on the first annular electrode penetrates through the insulating end cover and is exposed at the upper part of the insulating end cover;
the insulating end cover is fixed at the opening end of the cavity through a screw;
the method is characterized in that:
A. connecting an air inlet pipe on the cavity with the radon chamber, respectively connecting the semiconductor detector, the conductive layer on the inner wall of the cavity and the binding post on the first annular electrode with the high-voltage module through wires, connecting the sampling pump with an air outlet pipe on the cavity, starting the sampling pump, and introducing air in the radon chamber to enable the radon concentration in the cavity to be the same as that in the radon chamber;
B. by passingThe high-voltage module adjusts the voltage between the conductive layer in the cavity and the semiconductor detector, and the secondary instrument is used for obtaining the voltage measured by the semiconductor detector218The counting rate is increased along with the increase of the voltage, and when the voltage is continuously increased and the counting rate is basically unchanged, the voltage between the conductive layer and the semiconductor detector is stopped being adjusted;
C. the voltage between the conducting layer in the cavity and the surface of the first annular electrode is adjusted through the high-voltage module, and the voltage measured by the semiconductor detector is obtained by utilizing a secondary instrument218A Po decay counting rate, wherein when the counting rate reaches a maximum value, the voltage between the conductive layer and the surface of the first annular electrode is stopped being adjusted;
by increasing the electrostatic field to positive charge by the above method218Po collection efficiency, and measurement of semiconductor detector by secondary instrument218And analyzing and calculating the Po decay count to obtain the radon concentration.
2. Using ring electrodes to increase positive charge218Po collection efficiency measurement cavity for increasing electrostatic field to positive charge218Method for increasing the collection efficiency of Po, said ring electrode being positively charged218The measuring cavity of Po collection efficiency comprises a cavity body, an insulating end cover, a semiconductor detector and a first annular electrode;
the inner wall of the cavity is a conductive layer, the inner diameter of the conductive layer is D2, the wall plate is provided with an air outlet pipe and an air inlet pipe, and the height of the cavity in the cavity is 6-25 cm;
the semiconductor detector is arranged at the central part of the insulating end cover, the diameter of the probe of the semiconductor detector is D1, the first annular electrode is arranged at the lower part of the insulating end cover, the inner ring of the first annular electrode is larger than D1, the outer ring of the first annular electrode is smaller than D2, and the binding post on the first annular electrode penetrates through the insulating end cover and is exposed at the upper part of the insulating end cover;
the insulating end cover is fixed at the opening end of the cavity through screws, a plurality of annular electrodes are additionally arranged on the insulating end cover around the first annular electrode, the outer ring of the inner annular electrode is smaller than the inner ring of the outer annular electrode between every two adjacent annular electrodes, and the outer ring of the outermost annular electrode is smaller than D2;
the method is characterized in that:
A. connecting an air inlet pipe on the cavity with the radon chamber, respectively connecting the semiconductor detector, the conductive layer on the inner wall of the cavity and the binding post on each annular electrode with the high-voltage module through wires, connecting the sampling pump with an air outlet pipe on the cavity, starting the sampling pump, and introducing air into the radon chamber to enable the radon concentration in the cavity to be the same as that in the radon chamber;
B. the voltage between the conducting layer in the cavity and the semiconductor detector is adjusted through the high-voltage module, and the voltage measured by the semiconductor detector is obtained by utilizing a secondary instrument218The counting rate is increased along with the increase of the voltage, and when the voltage is continuously increased and the counting rate is basically unchanged, the adjustment of the voltage between the conductive layer and the semiconductor detector is stopped;
C. the voltage between the conducting layer in the cavity and the surface of each annular electrode is sequentially and respectively regulated through the high-voltage module, and the voltage measured by the semiconductor detector is obtained by utilizing a secondary instrument218Po decay counting rate, stopping regulating the voltage between the conducting layer and the surface of each annular electrode when the counting rate reaches the maximum value;
by the method, the collection efficiency of the electrostatic field to the positively charged 218Po can be further improved, and then the secondary instrument is used for analyzing and calculating the decay count of the 218Po measured by the semiconductor detector to obtain the radon concentration.
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| CN112230265B (en) * | 2020-09-07 | 2024-04-09 | 核工业北京化工冶金研究院 | Radon measuring chamber |
| CN113625327A (en) * | 2021-07-27 | 2021-11-09 | 衡阳师范学院 | Device and method for measuring Rn-222 by adopting CMOS image sensor |
| CN113484897B (en) * | 2021-07-27 | 2022-08-12 | 衡阳师范学院 | Device and method for measuring Po-218 mobility and neutralization rate by electrostatic collection method |
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