CN109298570A - A kind of thin-film transistor array base-plate and liquid crystal display - Google Patents
A kind of thin-film transistor array base-plate and liquid crystal display Download PDFInfo
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- CN109298570A CN109298570A CN201811212975.5A CN201811212975A CN109298570A CN 109298570 A CN109298570 A CN 109298570A CN 201811212975 A CN201811212975 A CN 201811212975A CN 109298570 A CN109298570 A CN 109298570A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- Chemical & Material Sciences (AREA)
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
The present invention provides a kind of thin-film transistor array base-plate, including substrate and the pixel electrode being set on the substrate；The pixel electrode includes multiple second fissions of the first connection seperated and seperated with first, and second fission is arranged at predetermined intervals；Wherein, engraved structure is provided on second fission.The utility model has the advantages that can be increased in exposure process by increasing engraved structure on the pixel electrode, light passes through the intensity of light shield, to increase the photosensitive intensity of photoresist, make that the line width done of pixel electrode is thinner, spacing is smaller, while reducing time for exposure and exposure intensity, improves productivity effect.And in the background technology it has been already mentioned that the line width of pixel electrode and line-spacing reduction, can increase the liquid crystal efficiency of liquid crystal display, the promotion of liquid crystal efficiency can increase the penetrance of liquid crystal display, to promote display quality.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of thin-film transistor array base-plates and liquid crystal display.
Background technique
The liquid crystal display generallyd use at present, usually by thin-film transistor array base-plate, color membrane substrates and positioned at thin
Liquid crystal layer between film transistor array substrate and color membrane substrates.Currently, VA mode TFT thin film transistor monitor, is opened with its height
The features such as mouth, high-resolution, wide viewing angle is that the large size panels such as LCD TV use.
For VA mode display, in traditional pixel design, the pixel electrode (ITO) on thin-film transistor array base-plate
It is designed as herring-bone form, and be divided into multiple regions to improve viewing angle characteristic, the pixel electrode of color membrane substrates side does not have shape.Using upper
The pixel for stating design method, with the line width of pixel electrode and the reduction of line-spacing, the liquid crystal improved efficiency of pixel, liquid crystal efficiency
The penetrance that can increase liquid crystal display is promoted, display quality is promoted.
But as the line width and line-spacing of pixel electrode become smaller, the exposure intensity needed in manufacturing process is increasing, exposes
Increasingly longer between light time, this can reduce productivity effect.
Summary of the invention
The present invention provides a kind of thin-film transistor array base-plate, to solve to become smaller with the line width and line-spacing of pixel electrode,
The exposure intensity needed in manufacturing process is increasing, and the time for exposure is increasingly longer, the technology reduced so as to cause productivity effect
Problem.
To solve the above problems, technical solution provided by the invention is as follows:
A kind of thin-film transistor array base-plate, comprising:
Substrate；And
The pixel electrode being set on the substrate, the pixel electrode include the first connection seperated and seperated with first
It is multiple second seperated, described second seperated arranges at predetermined intervals；
Wherein, engraved structure is provided on second fission.
Preferably, engraved structure is also equipped on first fission.
Preferably, the engraved structure includes multiple holes, and the cross-sectional shape of described hole is rounded, oval or more
Side shape.
Preferably, described hole presses array distribution.
Preferably, second fission is uniformly distributed in array.
Preferably, the edge that second fission is obliquely installed and the edge line of second fission is seperated with described first
Line forms angle.
Preferably, when the angle is acute angle, the angle is less than or equal to 45 degree；It is described when the angle is obtuse angle
Angle is greater than or equal to 135 degree.
Preferably, described first is seperated including first electrode branch and second electrode branch arranged in a crossed manner, is located at described
Described the second of first electrode branch side it is seperated with positioned at the first electrode branch other side described second it is seperated about
The first electrode branch is symmetrical.
Preferably, positioned at second electrode branch side described second it is seperated with it is another positioned at the second electrode branch
Described the second of side is seperated symmetrical about the second electrode branch.
The present invention also provides a kind of liquid crystal displays, including color membrane substrates and above-mentioned thin film transistor (TFT) array base
Plate is provided with liquid crystal layer between the color membrane substrates and the thin-film transistor array base-plate.
The invention has the benefit that can be increased in exposure process, light by increasing engraved structure on the pixel electrode
Line passes through the intensity of light shield, to increase the photosensitive intensity of photoresist, makes that the line width of pixel electrode done is thinner, spacing is smaller, together
When reduce time for exposure and exposure intensity, improve productivity effect.And in the background technology it has been already mentioned that the line width of pixel electrode and
Line-spacing reduces, and can increase the liquid crystal efficiency of liquid crystal display, the promotion of liquid crystal efficiency can increase penetrating for liquid crystal display
Rate, to promote display quality.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the structural schematic diagram of thin-film transistor array base-plate in the specific embodiment of the invention；
Fig. 2 is the first seperated schematic diagram seperated with second in the specific embodiment of the invention；
Fig. 3 is the structural schematic diagram of liquid crystal display in the specific embodiment of the invention.
Appended drawing reference:
10, substrate；20, pixel electrode；21, first is seperated；211, first electrode branch；212, second electrode branch；22,
Second is seperated；30, hole；41, the firstth area；42, the secondth area；43, third area；44, the 4th area；50, color membrane substrates；60, liquid crystal
Layer.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention is directed to existing thin-film transistor array base-plate, as the line width and line-spacing of pixel electrode become smaller, production
The technical issues of exposure intensity needed in the process is increasing, and the time for exposure is increasingly longer, reduces so as to cause productivity effect,
The present invention can solve the above problem.
A kind of thin-film transistor array base-plate, as depicted in figs. 1 and 2, the thin-film transistor array base-plate include substrate
10 and the pixel electrode 20 that is set on the substrate 10.
Wherein, the pixel electrode 20 includes multiple second fissions of the first fission 21 and 21 connection seperated with first
22, second fission 22 is arranged at predetermined intervals.
Wherein, engraved structure is provided on second fission 22.
Wherein, engraved structure is also equipped on first fission 21.
By increasing engraved structure on pixel electrode 20, can increase in exposure process, light passes through the intensity of light shield,
To increase the photosensitive intensity of photoresist, make that the line width of pixel electrode 20 done is thinner, spacing is smaller, at the same reduce the time for exposure and
Exposure intensity improves productivity effect.And in the background technology it has been already mentioned that the line width of pixel electrode 20 and line-spacing reduce, it can be with
Increase the liquid crystal efficiency of liquid crystal display, the promotion of liquid crystal efficiency can increase the penetrance of liquid crystal display, to be promoted aobvious
Show quality.
Specifically, the engraved structure includes multiple holes 30, the cross-sectional shape of described hole 30 is rounded, oval
Or polygon.
It should be noted that the cross-sectional shape of hole 30 can also be other shapes, herein not one by one in actual implementation
It enumerates.
Specifically, described hole 30 presses array distribution.
Pixel electrode 20 is needed in manufacturing process using exposure development processing procedure, by the light for having prefabricated engraved structure
Cover, to form engraved structure on pixel electrode 20, by the hole 30 of array distribution, can increase in exposure process, light
Line passes through the intensity and the uniformity of light shield, to increase the photosensitive intensity of photoresist, the thinner, spacing for making that pixel electrode 20 does is smaller
And it is more uniform.
Specifically, second fission 22 is uniformly distributed in array.
Make the more uniform unification in gap between the second fission 22, consequently facilitating manufacturing, reduces rejection rate, improve life
Produce benefit.
Specifically, second fission 22 is obliquely installed and the edge line seperated with described first 21 of second fission 22
Edge line formed angle.
It should be noted that the angle is a, specifically, a is less than or equal to 45 degree when the angle is acute angle；It is described
When angle is obtuse angle, a is greater than or equal to 135 degree.
By the way that the second fission 22 to be obliquely installed, the case where not changing the tie point of the second fission 22 seperated with first 21
Under, the spacing between two neighboring second fission 22 is reduced, to increase the liquid crystal efficiency of liquid crystal display.
Specifically, first fission 21 includes first electrode branch 211 and second electrode branch 212 arranged in a crossed manner,
Positioned at second fission 22 of 211 side of first electrode branch and positioned at 211 other side of first electrode branch
Second fission 22 is symmetrical about the first electrode branch 211.
Positioned at second fission 22 of 212 side of second electrode branch and positioned at the second electrode branch 212
Second fission 22 of the other side is symmetrical about the second electrode branch 212.
It should be noted that as shown in Fig. 2, first electrode branch 211 and second electrode branch 212 are mutually perpendicular to be formed
Criss-cross first fission 21, and the first area 41, the secondth area are formed between first electrode branch 211 and second electrode branch 212
42, third area 43 and the 4th area 44, all second fissions 22 in same area are parallel to each other.
Need the distribution situation to the second fission 22 to illustrate, positioned at the first area 41 second fission 22 be located at
Second fission 22 in the second area 42 is symmetrical one by one about second electrode branch 212；The second fission 22 positioned at the first area 41
Be located at the corresponding second seperated 22 symmetrical one by one about first electrode branch 211 of third area 43；Positioned at third area 43
The second fission 22 with positioned at the second seperated 22 symmetrical one by one about second electrode branch 212 of the 4th area 44；Positioned at
Second fission 22 in four areas 44 is corresponded about second fission 22 in the second area 42 about first electrode branch 211；To shape
Seperated 22 arrays of shape evenly arranged second.
The pixel electrode 20 of figure more regular uniform is convenient for producing manufacture in enormous quantities, so as to improve production efficiency.
Based on above-mentioned thin-film transistor array base-plate, the present invention also provides a kind of liquid crystal displays, as shown in figure 3, shown
Liquid crystal display includes color membrane substrates 50 and thin-film transistor array base-plate 10, the color membrane substrates 50 and the film crystal
Liquid crystal layer 60 is packaged between pipe array substrate 10.
Wherein, the thin-film transistor array base-plate includes substrate 10 and the pixel electrode that is set on the substrate 10
20；Multiple second fissions 22 of the pixel electrode 20 including the first fission 21 and 21 connection seperated with first, described second
Fission 22 is arranged at predetermined intervals.
Wherein, engraved structure is provided on second fission 22.
The invention has the benefit that can be increased in exposure process by increasing engraved structure on pixel electrode 20,
Light passes through the intensity of light shield, to increase the photosensitive intensity of photoresist, make the line width of pixel electrode 20 done is thinner, spacing more
It is small, while time for exposure and exposure intensity are reduced, improve productivity effect.And in the background technology it has been already mentioned that pixel electrode 20
Line width and line-spacing reduce, the liquid crystal efficiency of liquid crystal display can be increased, the promotion of liquid crystal efficiency can increase liquid crystal display
The penetrance of device, to promote display quality.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of thin-film transistor array base-plate, which is characterized in that the thin-film transistor array base-plate includes:
Substrate；And
The pixel electrode being set on the substrate, the pixel electrode include the more of the first connection seperated and seperated with first
A second is seperated, and second fission is arranged at predetermined intervals；
Wherein, engraved structure is provided on second fission.
2. thin-film transistor array base-plate according to claim 1, which is characterized in that be also equipped on first fission
Engraved structure.
3. thin-film transistor array base-plate according to claim 2, which is characterized in that the engraved structure includes multiple holes
Hole, the cross-sectional shape of described hole is rounded, oval or polygon.
4. thin-film transistor array base-plate according to claim 3, which is characterized in that described hole presses array distribution.
5. thin-film transistor array base-plate according to claim 1, which is characterized in that described second is seperated uniform in array
Distribution.
6. thin-film transistor array base-plate according to claim 5, which is characterized in that second fission be obliquely installed and
The edge line that the edge line of second fission is seperated with described first forms angle.
7. thin-film transistor array base-plate according to claim 6, which is characterized in that described when the angle is acute angle
Angle is less than or equal to 45 degree；When the angle is obtuse angle, the angle is greater than or equal to 135 degree.
8. thin-film transistor array base-plate according to claim 1, which is characterized in that first fission includes intersecting to set
The first electrode branch and second electrode branch set, positioned at second fission of first electrode branch side and positioned at institute
State the first electrode branch other side described second is seperated symmetrical about the first electrode branch.
9. thin-film transistor array base-plate according to claim 8, which is characterized in that be located at the second electrode branch one
Described the second of side is seperated seperated to divide be located at the second electrode branch other side described second about the second electrode
Branch is symmetrical.
10. a kind of liquid crystal display, which is characterized in that the liquid crystal display includes color membrane substrates and such as claim 1 to 9
Any one of described in thin-film transistor array base-plate, be arranged between the color membrane substrates and the thin-film transistor array base-plate
There is liquid crystal layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811212975.5A CN109298570B (en) | 2018-10-18 | 2018-10-18 | Thin film transistor array substrate and liquid crystal display |
| PCT/CN2018/122649 WO2020077818A1 (en) | 2018-10-18 | 2018-12-21 | Thin-film transistor array substrate and liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811212975.5A CN109298570B (en) | 2018-10-18 | 2018-10-18 | Thin film transistor array substrate and liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109298570A true CN109298570A (en) | 2019-02-01 |
| CN109298570B CN109298570B (en) | 2020-06-16 |
Family
ID=65157896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811212975.5A Active CN109298570B (en) | 2018-10-18 | 2018-10-18 | Thin film transistor array substrate and liquid crystal display |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109298570B (en) |
| WO (1) | WO2020077818A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022198578A1 (en) * | 2021-03-25 | 2022-09-29 | 京东方科技集团股份有限公司 | Pixel unit, array substrate, and display panel |
| US11971620B2 (en) | 2021-01-13 | 2024-04-30 | Wuhan Boe Optoelectronics Technology Co., Ltd. | Display panel and electronic device |
| US12078898B2 (en) | 2021-01-13 | 2024-09-03 | Wuhan Boe Optoelectronics Technology Co., Ltd. | Electrode structure, display panel, and electronic device |
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| US5946065A (en) * | 1995-10-31 | 1999-08-31 | Sharp Kabushiki Kaisha | Transmission type LCD with an organic interlayer insulating film having a plurality of microscopic hollows |
| US20060164585A1 (en) * | 2005-01-27 | 2006-07-27 | Po-Sheng Shih | Liquid crystal display panel |
| US8269935B2 (en) * | 2008-07-08 | 2012-09-18 | Chimei Innolux Corporation | Liquid crystal display |
| CN104267548A (en) * | 2014-07-18 | 2015-01-07 | 友达光电股份有限公司 | Pixel Structure Of Display Panel |
| CN104865762A (en) * | 2015-04-22 | 2015-08-26 | 友达光电股份有限公司 | Pixel structure and display panel |
| CN106773361A (en) * | 2017-03-08 | 2017-05-31 | 深圳市华星光电技术有限公司 | A kind of liquid crystal display panel and liquid crystal display |
| CN106847836A (en) * | 2017-04-10 | 2017-06-13 | 深圳市华星光电技术有限公司 | TFT substrate and preparation method thereof |
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2018
- 2018-10-18 CN CN201811212975.5A patent/CN109298570B/en active Active
- 2018-12-21 WO PCT/CN2018/122649 patent/WO2020077818A1/en active Application Filing
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|---|---|---|---|---|
| US5946065A (en) * | 1995-10-31 | 1999-08-31 | Sharp Kabushiki Kaisha | Transmission type LCD with an organic interlayer insulating film having a plurality of microscopic hollows |
| US20060164585A1 (en) * | 2005-01-27 | 2006-07-27 | Po-Sheng Shih | Liquid crystal display panel |
| US8269935B2 (en) * | 2008-07-08 | 2012-09-18 | Chimei Innolux Corporation | Liquid crystal display |
| CN104267548A (en) * | 2014-07-18 | 2015-01-07 | 友达光电股份有限公司 | Pixel Structure Of Display Panel |
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| CN106847836A (en) * | 2017-04-10 | 2017-06-13 | 深圳市华星光电技术有限公司 | TFT substrate and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11971620B2 (en) | 2021-01-13 | 2024-04-30 | Wuhan Boe Optoelectronics Technology Co., Ltd. | Display panel and electronic device |
| US12078898B2 (en) | 2021-01-13 | 2024-09-03 | Wuhan Boe Optoelectronics Technology Co., Ltd. | Electrode structure, display panel, and electronic device |
| WO2022198578A1 (en) * | 2021-03-25 | 2022-09-29 | 京东方科技集团股份有限公司 | Pixel unit, array substrate, and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109298570B (en) | 2020-06-16 |
| WO2020077818A1 (en) | 2020-04-23 |
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