CN109285764B - Film layer patterning method and preparation method of organic light-emitting diode - Google Patents
Film layer patterning method and preparation method of organic light-emitting diode Download PDFInfo
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- CN109285764B CN109285764B CN201811138931.2A CN201811138931A CN109285764B CN 109285764 B CN109285764 B CN 109285764B CN 201811138931 A CN201811138931 A CN 201811138931A CN 109285764 B CN109285764 B CN 109285764B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
Abstract
The invention provides a film patterning method and a preparation method of an organic light emitting diode, belongs to the technical field of display, and can solve the problem that the gradient angle of an isolation column after a photoresist layer is patterned cannot be larger than 90 degrees in the prior art. The film patterning method is characterized in that after exposure and development, a reverse curing mode is adopted for curing, and because the first pattern structure which is not completely cured is subjected to the action of gravity and has a tendency of flowing downwards, the area of one surface, close to the substrate, of the second pattern structure after final curing is smaller than the area of one surface, away from the substrate, of the second pattern structure by means of natural force in the gravity direction in the gradual curing process, and an inverted trapezoidal shape is obtained in the curing process, wherein the area of one side, away from the substrate, of the second pattern structure is larger, and a larger slope angle is obtained by the method.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a film layer patterning method and a preparation method of an organic light emitting diode.
Background
In order to avoid adverse effects on the control circuit below the Organic Light Emitting unit caused by evaporation in the process of forming the Organic Light Emitting unit by coating, an isolation column is usually disposed between the control circuit and the Organic Light Emitting unit to separate the control circuit from the Organic Light Emitting unit.
The conventional isolation pillars are generally formed by using a photolithography technique, as shown in fig. 1, a photoresist layer 11 (containing a photosensitizer, a polyimide precursor, a solvent PGME/PGMEA, etc.) is coated on a substrate 10 to form a photoresist layer, and then a pattern including a plurality of isolation pillars 12 is formed by exposure, development, and curing.
The inventor finds that at least the following problems exist in the prior art: influenced by the process, the slope angle beta of the pattern of the finally formed isolation post 12 is generally 30-50 degrees after the photoresist 10 is baked and cured by an oven, which is not beneficial to preventing water and oxygen on one side of the substrate 10, but the slope angle of more than 90 degrees can not be realized by the prior process.
Disclosure of Invention
The invention provides a film layer patterning method and a preparation method of an organic light-emitting diode, aiming at the problem that the gradient angle of an isolation column after a photoresist layer is patterned cannot be larger than 90 degrees in the prior art.
The technical scheme adopted for solving the technical problem of the invention is as follows:
a method of film layer patterning, comprising the steps of:
coating a transparent material containing a photosensitizer on the first surface of the substrate to form a photosensitive film layer;
exposing and developing the photosensitive film layer to obtain a plurality of first pattern structures;
reversely arranging the substrate after the steps, so that the substrate and the first pattern structure are arranged in sequence in the gravity direction;
and curing the side of the second surface of the substrate to obtain a plurality of second pattern structures, so that the orthographic projection of one surface, close to the substrate, of the second pattern structures on the substrate falls within the range of the orthographic projection of one surface, away from the substrate, of the second pattern structures on the substrate.
Optionally, after the forming of the photosensitive film layer, before the exposing of the photosensitive film layer, the method further includes: and heating the side of the photosensitive film layer, which is far away from the substrate.
Optionally, the heating temperature is 100-140 ℃, and the heating time is 130-180 s.
Optionally, the forming a photosensitive film layer includes: forming a plurality of superposed sub-film layers; the exposure and development of the photosensitive film layer comprises the following steps: respectively exposing each formed sub-film layer by using different mask plates, and developing after exposing all the sub-film layers; and the exposure area of the sub-film layer on the side farther away from the substrate gradually increases or gradually decreases.
Optionally, the sensitizer comprises
The polymer material comprises a polyimide precursor and a solvent (PGME/PGMEA).
The invention also provides a patterned structural layer which comprises a plurality of second pattern structures formed by adopting the method.
Optionally, before curing, the range of the slope angle α 1 between the first pattern structure and the substrate is as follows: alpha 1 is more than 120 degrees and less than 160 degrees.
Optionally, after curing, the range of the slope angle α 2 between the second pattern structure and the substrate is as follows: alpha 2 is more than 90 degrees and less than 140 degrees.
The invention also provides a preparation method of the organic light-emitting diode, which comprises the step of forming a plurality of second pattern structures as the isolation columns by adopting the method.
Optionally, the step of coating photoresist on one side of the substrate is coating a polymer material containing a photosensitizer on the substrate containing the control circuit; the step of forming the organic light emitting unit is further included after the step of obtaining the plurality of second pattern structures.
Drawings
FIG. 1 is a schematic diagram of a conventional photoresist patterning structure;
fig. 2 is a schematic diagram of a method for patterning a film layer according to embodiment 1 of the present invention;
fig. 3 is a schematic view of a method for patterning a film layer according to embodiment 2 of the present invention;
FIG. 4 is a schematic structural view of a heating chamber of embodiment 2 of the present invention;
FIG. 5 is a schematic view of a method for patterning a film layer according to embodiment 3 of the present invention;
fig. 6 is a schematic view of a method for manufacturing an organic light emitting diode according to embodiment 5 of the present invention;
wherein the reference numerals are: 10. a substrate; 11. photoresist; 12. an isolation column; 2. a mask plate; 21. a first mask plate; 22. a second mask; 30. a photosensitive film layer; 31. a first pattern structure; 32. a second pattern structure; 33. a photosensitizer; 41. a chamber; 42. supporting legs; 43. a heating source; 51. a first sub-film layer; 52. a second sub-film layer; 61. a control circuit; 62. an organic light emitting unit.
Detailed Description
In order to make the technical solutions of the present invention better understood, the present invention is further described in detail with reference to the accompanying drawings and the detailed description below.
Example 1:
the present embodiment provides a method for patterning a film layer, as shown in fig. 2, including the following steps:
s01, coating a polymer material containing a photosensitizer on the first surface of the substrate 10 to form a photosensitive film 30;
s02, exposing and developing the photosensitive film layer 30 by using the mask 2 to obtain a plurality of first pattern structures 31;
s03, reversing the substrate 10 after the above steps so that the substrate 10 and the first pattern structure 31 are sequentially arranged in the gravity direction;
s04, curing the second side of the substrate 10 to obtain a plurality of second pattern structures 32, so that the orthographic projection of the second pattern structures 32 on the substrate 10 at the side close to the substrate 10 falls within the range of the orthographic projection of the side far away from the substrate 10 on the substrate 10.
The film patterning method of the embodiment is to perform curing in a reverse curing manner after exposure and development, and because the first pattern structure 31 which is not completely cured has a tendency of flowing downwards under the action of gravity, the area of one surface of the second pattern structure 32 which is finally cured and is close to the substrate 10 is smaller than the area of one surface of the second pattern structure which is finally cured and is far away from the substrate 10 by virtue of natural force in the gravity direction in the gradual curing process, so that an inverted trapezoidal shape is obtained in the curing process, wherein the area of one side of the second pattern structure 32 which is far away from the substrate 10 is larger, which is equivalent to that a larger gradient angle is obtained by the method, and the method is used for preparing the isolation pillar of the OLED, and is favorable for isolating water and oxygen on one side of the substrate 10 after the subsequent formation of the organic light emitting unit.
Example 2:
the present embodiment provides a film patterning method, as shown in fig. 3, including the following steps:
s01a, coating a transparent material containing a photosensitizer 33 on the first surface of the substrate 10 to form a photosensitive film 30; the substrate 10 may be a glass substrate or a resin-based flexible substrate, and the specific material of the substrate is not limited herein. It should be noted that the substrate 10 may be only a glass substrate, or may be a substrate 10 containing a certain functional layer, for example, the substrate 10 of this step may be a substrate 10 containing an OLED control circuit. In this embodiment, a positive photoresist is taken as an example, that is, the polymer material containing the photosensitizer 33 is a positive photoresist.
S01b, heating the side, away from the substrate 10, of the photosensitive film layer 30; in the figure, the photosensitive film 30 is located above the substrate 10, and the photosensitive film 30 is heated above the photosensitive film 30, so that the heat received by the photosensitizer 33 in the photosensitive film 30 close to the heating source (i.e. the photosensitive film 30 on the upper portion) is different from the heat received by the photosensitizer 33 in the photosensitive film 30 far away from the heating source (i.e. the photosensitive film 30 on the lower portion), and from near to far (i.e. from top to bottom), the received heat is gradually reduced, so that the photosensitive film 30 close to one side of the heating source, i.e. the side deviating from the substrate 10, is relatively more stable, and is not easy to be etched in subsequent steps.
In one embodiment, the sensitizer 33 comprises
The polymer material comprises a polyimide precursor and a solvent (PGME/PGMEA).
In this embodiment, the specific components of the polymer material are not limited, and the polymer material may be a polyimide precursor or a solvent (PGME/PGMEA). Generally, the polymer material before coating may be liquid or viscous oligomer (or referred to as prepolymer), and in this embodiment, the photosensitizer 33 is uniformly mixed in the polymer material before coating. Since the photosensitizer 33 is uniformly dispersed in the polymer material, the photosensitizer 33 is uniformly distributed in the photosensitive film layer 30 formed after the S01a coating; after the heating in S01b, the upper heating mode may make the photosensitizer 33 distribute in a gradient manner from the side away from the substrate 10 to the side close to the substrate 10, and the polyimide precursor on the side away from the substrate 10 is relatively firmer.
As a preferable scheme of the embodiment, the heating temperature in S01b is 100-140 ℃, and the heating time is 130-180S.
That is, the baking is performed at a temperature of about 120 ℃ for about two to three minutes. The present embodiment herein provides a heating box having a plurality of chambers 41 stacked one on another as shown in fig. 4, a plurality of support legs 42 for supporting the substrate 10 are provided below each chamber 41, and a plurality of heating sources 43 are provided on the top of each chamber 41 for heating the photosensitive film layer 30 on the substrate 10.
S02, exposing and developing the photosensitive film 30 to obtain a plurality of first pattern structures 31; wherein the photosensitive agent 33 is present in the areas not covered by the mask 2
After development, a part of the indene carboxylic acid derivative is removed, forming the first pattern structure 31 in the shape of an inverted trapezoid. It can be seen that: the effect of the heating on S01b is: in the exposure and development, the area of the photosensitive film layer 30 on the side close to the heating source 43, i.e., the side away from the substrate 10, is larger than the area of the photosensitive film layer 30 on the side away from the heating source 43, i.e., the side close to the substrate 10. That is, the slope angle of the obtained first pattern structure 31 is greater than 90 ℃, and the range of the slope angle α 1 is: 120 DEG < alpha 1 < 160 deg.
S03, reversing the substrate 10 after the above steps so that the substrate 10 and the first pattern structure 31 are sequentially arranged in the gravity direction; this step is similar to that in example 1 and will not be described herein again.
S04, curing the second side of the substrate 10 to obtain a plurality of second pattern structures 32, so that the orthographic projection of the second pattern structures 32 on the substrate 10 at the side close to the substrate 10 falls within the range of the orthographic projection of the side far away from the substrate 10 on the substrate 10.
The curing in this step may be performed by heating or by light irradiation, and may be selected according to the specific substance of the transparent material or the photosensitizer 33. After the reverse curing, the polyimide precursor is further polymerized into a stable solid polyimide, and the slope angle α 2 between the second pattern structure 32 and the substrate 10 is in the range of: alpha 2 is more than 90 degrees and less than 140 degrees.
Example 3:
the present embodiment provides a film patterning method, as shown in fig. 5, including the following steps:
s1a, coating a polymer material containing a photosensitizer 33 on a first surface of the substrate 10 to form a first sub-film layer 51 with a thickness h 1;
s1b, exposing the first sub-film layer 51 by using a first mask 21;
s2a, coating the polymer material containing the photosensitizer 33 on the substrate 10 after the above steps in the same way, to form a second sub-film 52 with a thickness h 2;
s2b, exposing the second sub-film layer 52 by using the second mask 22; the pattern size of the second mask 22 is different from the pattern size of the first mask 21, the area of the light shielding portion of the second mask 22 is slightly larger than that of the first mask 21, and so on, when more layers of sub-layers are provided, if the transparent material containing the photosensitizer 33 is a positive photoresist, the area of the light shielding portion of the mask 2 corresponding to the sub-layers increases in sequence from the position close to the substrate 10 to the position far from the substrate 10, and if the transparent material containing the photosensitizer 33 is a negative photoresist, the area of the light shielding portion of the mask 2 corresponding to the sub-layers decreases in sequence from the position close to the substrate 10 to the position far from the substrate 10.
S3, developing the first sub-film layer 51 and the second sub-film layer 52 simultaneously; an inverse trapezoidal first pattern structure 31 is obtained. The thickness H of the first pattern structure 31 is H1+ H2, the gradient angle of the first pattern structure 31 is greater than 90 ℃, and the gradient angle α 1 ranges from: 120 DEG < alpha 1 < 160 deg.
S4, curing the second side of the substrate 10 to obtain a plurality of second pattern structures 32, so that the orthographic projection of the second pattern structures 32 on the substrate 10 at the side close to the substrate 10 falls within the range of the orthographic projection of the side far away from the substrate 10 on the substrate 10. The curing in this step may be performed by heating or by light, and may be selected according to the specific substance of the polymer material or the photosensitizer 33.
In the embodiment, a large slope angle is obtained by adopting a mode of multiple exposure, one-time development and reverse solidification. The method is used for preparing the isolation column of the OLED, and is beneficial to isolating water and oxygen on one side of the substrate 10 after the organic light-emitting unit is formed subsequently.
Example 4:
the present embodiment provides a patterned structure layer, which includes a plurality of second pattern structures formed by the method of the above embodiment.
In this embodiment, the size of the second pattern structure is not limited, and may be selected and adjusted according to actual needs.
In one embodiment, the range of the slope angle α 1 of the first pattern structure to the substrate before curing is: 120 DEG < alpha 1 < 160 deg.
In one embodiment, the range of the slope angle α 2 of the second pattern structure to the substrate after curing is: alpha 2 is more than 90 degrees and less than 140 degrees.
That is, the slope angle of the second pattern structure in the patterned structure layer formed by the method of the above embodiment is an obtuse angle.
Example 5:
the present embodiment provides a method for manufacturing an organic light emitting diode, as shown in fig. 6, including the following steps:
on the substrate 10 including the control circuit 61, a plurality of second pattern structures 32 are formed as the isolation pillars 12 by applying a polymer material containing the photosensitizer 33 using the method of the above embodiment;
the organic light emitting unit 62 is formed on the substrate 10 where the above steps are completed.
In the present embodiment, the area of the side of the isolation pillar 12 facing away from the substrate 10 is larger than the area of the side close to the substrate 10, and the isolation pillar 12 can isolate the water and oxygen of the organic light emitting unit close to the substrate 10.
Example 6:
this embodiment provides a display device including the organic light emitting diode prepared in the above embodiment. The display device may be: the display device comprises any product or component with a display function, such as electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
It will be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principles of the present invention, and the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (9)
1. A method of patterning a film, comprising:
coating a polymer material containing a photosensitizer on the first surface of the substrate to form a photosensitive film layer;
exposing and developing the photosensitive film layer to obtain a plurality of first pattern structures;
and reversely arranging the substrate after the steps, so that the substrate and the first pattern structure are sequentially arranged in the gravity direction, wherein the range of the slope angle alpha 1 of the first pattern structure is as follows: alpha 1 is more than 120 degrees and less than 160 degrees;
and curing one side of the second surface of the substrate to obtain a plurality of second pattern structures, so that the orthographic projection of one surface, close to the substrate, of each second pattern structure on the substrate falls into the range of the orthographic projection of one surface, deviating from the substrate, of the other surface, on the substrate, of each second pattern structure, the cross section of each second pattern structure is in an inverted trapezoid shape, and the range of the gradient angle alpha 2 between each second pattern structure and the substrate is as follows: alpha 2 is more than 90 degrees and less than 140 degrees;
after the photosensitive film layer is formed, before the photosensitive film layer is exposed, the method further comprises: and heating the side of the photosensitive film layer, which is far away from the substrate.
2. The method of claim 1, wherein the heating temperature is 100 ℃ to 140 ℃ and the heating time is 130s to 180 s.
3. The method of claim 1, wherein forming the photosensitive film layer comprises: forming a plurality of stacked sub-film layers; the exposing and developing the photosensitive film layer comprises the following steps: respectively exposing by using different mask plates every time one sub-film layer is formed, and developing after all the sub-film layers are exposed; and the exposure area of the sub-film layer on the side farther away from the substrate gradually increases or gradually decreases.
4. The method of claim 1, wherein the sensitizer comprises
The polymer material comprises a polyimide precursor and a solvent PGME/PGMEA.
5. A patterned structural layer comprising a plurality of second pattern structures, the plurality of second pattern structures being formed by the method of any of claims 1-4.
6. The patterned structural layer of claim 5, wherein a gradient angle α 1 between the first pattern structure and the substrate before curing is in a range of: alpha 1 is more than 120 degrees and less than 160 degrees.
7. The patterned structure layer of claim 5, wherein the slope angle α 2 of the second pattern structure to the substrate after curing is in the range of: alpha 2 is more than 90 degrees and less than 140 degrees.
8. A method for manufacturing an organic light emitting diode, comprising the step of forming a plurality of second pattern structures as the separation columns by the method according to any one of claims 1 to 4.
9. The method of claim 8, wherein the applying a polymer material containing a photosensitizer on one side of the substrate is applying a transparent material containing a photosensitizer on the substrate containing the control circuit; the step of forming an organic light emitting unit is further included after the obtaining of the plurality of second pattern structures.
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| CN107611021A (en) * | 2017-08-10 | 2018-01-19 | 南方科技大学 | Prepare the method and its application of the quantum dot light emitting layer of patterns of high precision |
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| US6616496B1 (en) * | 2000-06-14 | 2003-09-09 | Ritdisplay Corporation | Method of forming a polyimide-isolating wall of reverse-trapezoid cross-section with electric, thermal and mechanical stability |
| WO2005027584A1 (en) * | 2003-09-16 | 2005-03-24 | Daewoo Electronics Service Co., Ltd. | Organic electroluminescent display and method of making the same |
| JP2005158192A (en) * | 2003-11-27 | 2005-06-16 | Tdk Corp | Method for manufacturing thin-film magnetic head, and method for forming magnetic layer pattern |
| CN100499952C (en) * | 2007-10-16 | 2009-06-10 | 京东方科技集团股份有限公司 | Making method for homochromy and white organic EL part |
| CN101562129B (en) * | 2008-04-16 | 2011-02-16 | 中国科学院微电子研究所 | Method of making inverted trapezoidal cross-section structure by S18 series of positive photoresist |
| CN108539054B (en) * | 2018-04-13 | 2020-04-24 | 苏州维业达触控科技有限公司 | Method for preparing cathode isolation column of organic light-emitting display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1472994A (en) * | 2003-06-23 | 2004-02-04 | 清华大学 | Organic electrofluorescence device and producing mehtod thereof |
| CN107611021A (en) * | 2017-08-10 | 2018-01-19 | 南方科技大学 | Prepare the method and its application of the quantum dot light emitting layer of patterns of high precision |
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