CN1472994A - Organic electrofluorescence device and producing mehtod thereof - Google Patents
Organic electrofluorescence device and producing mehtod thereof Download PDFInfo
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Abstract
The invention relates to an organic electro-luminescence device and the manufacturing method thereof in the technical field of electronic and semiconductor component. A double-layer insulating column is provided for on the pattern of the first electrode (2) of the device, the cross section of the line of the second layer (8) of the insulating column has the shape that its width is decreased from up to down, and its hypotenuse has two sequentially convergent angles alpha,beta, and alpha>beta. Then the organic functioning layer (5) and the second electrode (6) are deposited sequentially. The angle beta of the hypotenuse of the second layer (8) of the insulating column can increase greatly the tolerance of the evaporating angle and the evaporating thickness of the metal back electrode, and the organic functioning layer can be fully covered by the metal back electrode by using the different evaporating angles between the organic functioning layer and the metal back electrode.
Description
Technical field
The present invention relates to a kind of organic electroluminescence device, also relate to this preparation of devices method, belong to electronic semi-conductor's components and parts technical field.
Background technology
Organic electroluminescence device (Organic Electroluminescent Devices is hereinafter to be referred as OLEDs) usually like this constitutes: be positioned at the first transparent electrode above the transparency carrier, be deposited on the organic electroluminescent medium (organic function layer) on first electrode and be positioned at second electrode (metal electrode) above the organic electroluminescent medium.Transparency electrode is as the anode of device, and metal electrode is as the negative electrode of device.Apply high level to transparency electrode, apply low level to metal electrode and make device luminous.One group of anode parallel to each other (or negative electrode) constitutes X-Y two-dimension addressing matrix with one group of vertical with it negative electrode parallel to each other (or anode).
The pattern wiring of normally transparent electrode is realized by photoetching technique.The pattern wiring of metal electrode adopts the method for metal mask evaporation or the method for photoetching to realize.But the complex manufacturing technology of metal mask plate, cost height in the pattern wiring of metal electrode, lines are difficult for running business into particular one, and realize having difficulties on the high-resolution at device.Metal mask plate contacts with organic membrane and destroys organic function layer easily simultaneously, causes the short circuit between transparency electrode and the metal electrode.If carry out metal line, can there be following problem again with the method for photoetching:
1. the baking temperature of photoresist (as 120 ℃) can make organic membrane be damaged;
2. the solvent of photoresist, developer solution, corrosive liquid can damage organic membrane;
3. if adopt dry etching, the organic membrane of can breaking of particle flux wherein.
More than these destructive factors all can make the device performance deterioration.
European patent EP 0732868B1 (the day for announcing: on May 24th, 2000) adopt individual layer insulated column technology to carry out the pattern wiring of metal electrode.Device architecture is as shown in Figure 1: deposit transparent conductive film 2 on transparency carrier 1 makes transparent conductive film 2 by lithography one group of array that is parallel to each other.Rotation applies (hereinafter to be referred as spin coating) photoresist on transparent conductive film 2, and photoresist is made by lithography and the nesa coating 2 a plurality of parallel vertical element of quadrature mutually.Then by certain PROCESS FOR TREATMENT make the cross section of vertical element form up big and down small fall trapezoidal shape (if the eurymeric photoresist, by at C
6H
5The method of soaking in the Cl solution makes figure form trapezoidal shape; If negative photoresist, by postexposure bake, promptly middle baking technology makes figure form trapezoidal shape), the individual layer insulated column that this vertical element with the cross section of falling the trapezoidal shape is exactly a device (negative electrode next door) 4.Continue deposit organic function layer 5 and metal level 6 on the substrate that has individual layer insulated column 4, because shadow effect, do not form continuous metallic film at the side surface of insulated column, guaranteed the electric insulation between the adjacent image point, metal level 6 is separated effectively.But this scheme has following shortcoming:
(1) insulated column 4 is to be made of one deck megohmite insulant, and 4 cross section has the up big and down small trapezoidal shape that falls,
Deposit after organic function layer 5 and the metal level 6, part metals layer 6 might be crossed organic layer 5 and fall
Go on the transparent conductive film 2 between individual layer insulated column 4 bottoms and the organic layer 5 (as shown in Figure 2), make
Become this picture element short circuit, not luminous;
(2) individual layer insulated column 4 can only with the perpendicular parallel distribution of direction of transparency electrode 2, separating metal electrode 6
The time reduced reverse inhibition voltage between the metal wire, but can't reduce by first transparency electrode it
Between reverse inhibition voltage, make that the power consumption of device is higher;
(3) in the insulated column material, mix black dyes and can improve the contrast of device when luminous, because individual layer is isolated
The parallel distribution of parallel direction is so can't improve the contrast of device significantly.
(open day: on January 24th, 2002) the problems referred to above that exist at the individual layer insulated column adopted a kind of double-deck insulated column technology to carry out the pattern wiring of metal electrode to U.S. Patent application US20020008467A1, as shown in Figure 3, this bilayer insulated column is formed for falling negative electrode next door 4 two parts of trapezoidal shape by having insulating base 3 that cancellated cross section is the trapezoid shape and cross section.This insulated column preparation process is as follows: on the transparency carrier for preparing first electrode, apply earlier one deck photoresist and before dry by the fire, this photoresist can be eurymeric novolac photoresist, minus thermoprene, chemical amplification type resin, is preferably eurymeric novolac photoresist; With the ground floor resist exposure, develop to net-like pattern; Baking ground floor photoresist makes it not be subjected to the influence of second layer photoresist preparation process; Apply second layer negative photoresist and preceding baking; Make its lines cross section form down trapezoidal negative electrode partition pattern by exposure, middle baking and development; High-temperature baking makes the insulated column full solidification, and removes moisture and solvent.But still there is following shortcoming in this scheme:
1. form the pattern of insulating base 3 earlier, the pattern in one deck negative electrode next door 4 above forming in the same way again, technology
Complexity, operation is more, and first electrode surface of device light-emitting zone successively is subjected to the pollution of two-layer photoresist,
Be unfavorable for the raising of device overall performance and rate of finished products;
2. the cross section in negative electrode next door 4 is the up big and down small trapezoidal shape that falls, because it falls the restriction at trapezoidal angle of inclination,
Have only vertical evaporation organic function layer, and tiltedly steam metal level, just can make metal level coat the organic function layer limit fully
Edge, but the deposition angles of organic function layer just can make organic film have uniformity preferably, the moon about 70 °
This shape of utmost point next door 4 cross sections can't guarantee simultaneously that the evaporation uniformity and the metal level of organic function layer is complete
Coat the purpose at organic function layer edge, we can say that the isolation effect in this negative electrode next door 4 is relatively poor, excellent not enough
Change.
Summary of the invention
The purpose of this invention is to provide a kind of organic electroluminescence device, thereby cut apart second electrode effectively, improve the performance of device.
Another object of the present invention provides a kind of preparation method of organic electroluminescence device, improves shortcomings such as the complex process, the rate of finished products that exist among the insulated column preparation technology in the past are low, cost height.
For achieving the above object, a technical scheme of the present invention provides a kind of organic electroluminescence device, constitute X-Y two-dimension addressing matrix by one group of first electrode parallel to each other with one group of second electrode parallel to each other vertical with first electrode, this device has a plurality of pixels, each pixel comprises first electrode and second electrode and is clipped in organic function layer between described two electrodes, on described first electrode pattern, have one group with the perpendicular double-deck insulated column that is parallel to each other and separates of first electrode pattern with insulating properties, wherein the figure of insulated column ground floor is network structure or list structure, the cross section of lines has up-small and down-big shape, the lines of the insulated column second layer on the lines of insulated column ground floor and the position placed in the middle, it is characterized in that: the cross section of insulated column second layer lines is up big and down small shape, its hypotenuse has two interior gradually angle [alpha] of receiving, β, and α＞β.
The feature of technique scheme is that also wherein said α angle is 45 °～80 °, and described β angle is 20 °～60 °.
The feature of technique scheme is that also the material of wherein said insulated column ground floor, the second layer is the Photosensitive organic insulating material, and described second layer organic insulating material is for applying, expose, all do not influencing when developing described ground floor organic insulating material light sensitivity and inhomogeneity material; The material of described insulated column ground floor is generally a kind of in Photosensitive polyimides (polyimide is hereinafter to be referred as PI), eurymeric novolac photoresist, minus thermoprene, the chemical amplification type photoresist, through being preferably Photosensitive PI; The material of the described insulated column second layer is generally lines cross section after the photoetching can form a kind of in the up big and down small photoresist that falls trapezoidal shape, through being preferably negative photoresist.
The hypotenuse of the second layer lines cross section of double-deck insulated column has two interior gradually angle [alpha], β that receive in the organic electroluminescence device provided by the invention, because the existence at β angle makes the deposition angles of metal back electrode and the tolerance of evaporation thickness increase greatly, and by use organic function layer different with metal back electrode deposition angles, can realize the fully coating of back electrode to organic function layer, the organic function layer edge of having avoided more being subject to water, oxygen attack than metal level is exposed to outside the back electrode, thereby improves the life-span and the uniformity of luminance of device.
Double-deck insulated column can more effectively be cut apart second electrode in the organic electroluminescence device provided by the invention, and device is luminous evenly, and the life-span also is improved.
Another technical scheme of the present invention provides a kind of preparation method of organic electroluminescence device, and this method may further comprise the steps:
1. the deposit transparent conductive film makes first electrode by lithography one group of phase as first electrode of device on transparency carrier
Parallel mutually and separate vertical element;
2. on above-mentioned first electrode pattern, apply the ground floor organic insulating material, preceding baking post-exposure, exposure figure is netted
Structure or list structure;
3. on the organic insulating material of overexposure, apply second layer organic insulating material at above-mentioned ground floor, after the preceding baking to
Two layers of organic insulating material carry out the alignment exposure, and exposure figure is mutual with perpendicular one group of first electrode pattern
Parallel and separate vertical element, live width are slightly narrower and the position is placed in the middle thereon than ground floor line thickness;
4. above-mentioned two-layer organic insulator through overexposure is carried out top-down wet development, back insulated column first develops
The cross section of layer line bar forms up-small and down-big shape, and the cross section of insulated column second layer lines forms up big and down small
Shape, its hypotenuse has two angle [alpha], the β that receive in gradually, and α＞β, baking makes above-mentioned two-layer
The insulated column full solidification;
5. on above-mentioned figure with double-deck insulated column and first electrode, continue the deposit organic function layer;
6. on above-mentioned organic function layer, continue second electrode of deposited metal as device.
Another technical scheme of the present invention provides the preparation method of another kind of organic electroluminescence device, and this method may further comprise the steps:
1. the deposit transparent conductive film makes first electrode by lithography one group of phase as first electrode of device on transparency carrier
Parallel mutually and separate vertical element;
2. on above-mentioned first electrode pattern, apply the ground floor organic insulating material, preceding baking but do not expose;
3. on above-mentioned ground floor organic insulating material, apply second layer organic insulating material, organic exhausted after the preceding baking to the second layer
The edge material exposes, and exposure figure is for being parallel to each other and separating with first electrode pattern perpendicular one group
Vertical element, wet development make the second layer form the lines that cross section has up big and down small shape;
4. above-mentioned ground floor organic insulating material is carried out the alignment exposure, exposure figure is network structure or list structure, line
Wide width than the second layer is slightly wide, and the cross section of insulated column ground floor lines forms up-small and down-big behind the wet development
Shape, the hypotenuse of insulated column second layer lines cross section have two interior gradually angle [alpha], β that receive, and α
＞β, baking makes above-mentioned two-layer insulated column full solidification;
5. on above-mentioned figure with double-deck insulated column and first electrode, continue the deposit organic function layer;
6. on above-mentioned organic function layer, continue second electrode of deposited metal as device.
The preparation method of organic electroluminescence device provided by the invention has the following advantages:
(1) technology is simple, just just double-deck insulated column is carried out high-temperature baking at last, carries with US20020008467A1
The technical scheme that goes out is compared, and has shortened technological process, and the time for preparing double-deck insulated column has shortened 10～30%,
Can enhance productivity greatly, reduce production costs;
(2) operation is few, has saved equipment investment cost and production management cost accordingly, more is applicable at home to build
Scale of investment is little, produce production line flexibly;
(3) continuous applied in two coats organic insulating material, and second layer insulated column is exhausted in the double-deck insulated column process of preparation
The edge material does not contact first electrode surface of light-emitting zone, makes the pollution of insulated column preparation process to light-emitting zone
Reduce to minimum, help improving the device overall performance, rate of finished products is easy to reach high level;
(4) the cross section hypotenuse of the insulated column second layer lines of process preparation has two interior gradually angles of receiving thus
Degree α, β are because the existence at β angle makes that the tolerance of the deposition angles of metal back electrode and evaporation thickness is big
Big increasing, and by use organic function layer different with metal back electrode deposition angles, can realize
Back electrode has avoided more being subject to than metal level organic merit of water, oxygen attack to the coating fully of organic function layer
The ergosphere edge is exposed to outside the back electrode, thereby improves the life-span and the uniformity of luminance of device.
The process that preparation method provided by the invention is by the organic insulation film of twice coating, double exposure, develop from top to bottom, hot setting prepares double-deck insulated column simultaneously, technology is simple, equipment investment and production cost is low, rate of finished products is high.
Second electrode of organic electroluminescence device prepared by this method can be doubly isolated post and separate effectively, and device is luminous evenly, and the life-span also is improved.
Be illustrated by embodiment, embodiment below in conjunction with accompanying drawing, it is clearer that the present invention can become.
Description of drawings
Fig. 1 is the section of structure of the organic electroluminescence device that proposes among the background technology EP0732868B1.
Fig. 2 is the section of structure when proposing first electrode of organic electroluminescence device and second electric pole short circuit among the background technology EP0732868B1.
Fig. 3 be background technology US20020008467A1 propose the vertical view of organic electroluminescence device.
Fig. 4 is the section of structure of organic electroluminescence device among the present invention.
Fig. 5-1a～Fig. 5-the 3rd, the preparation schematic diagram (2.～4. consistent) of the double-deck insulated column of preparation organic electroluminescence device among the present invention with the step of preferred for preparation method 1.
Fig. 6-1～Fig. 6-3b is the preparation schematic diagram (2.～4. consistent with the step of preferred for preparation method 2) of the double-deck insulated column of preparation organic electroluminescence device among the present invention.
Among above-mentioned Fig. 1～Fig. 6, the 1st, transparency carrier, 2 is first electrode (anodes), the 3rd, the ground floor of double-deck insulated column (insulating base) in the background technology, the 4th, the second layer of double-deck insulated column (negative electrode next door) in individual layer insulated column in the background technology or the background technology, the 5th, organic function layer, 6 is second electrode (negative electrodes), the 7th, the ground floor (insulating base) of the double-deck insulated column of the present invention, the 8th, the second layer (negative electrode next door) of the double-deck insulated column of the present invention, the 9th, exposure exposes with mask plate 2 Fig. 5 with mask plate 1,10th, vertically downward arrow is represented with UV light organic insulator to be exposed in 6.
Elaborate content of the present invention below in conjunction with the drawings and specific embodiments, should be appreciated that the present invention is not limited to following preferred implementation, preferred implementation is as just illustrative embodiment of the present invention.
Embodiment
The section of structure of the organic electroluminescence device that the present invention proposes as shown in Figure 4, wherein: the 1st, transparency carrier can be glass or plastics (flexible base, board); 2 is first electrode (anodes), is generally the higher metals of work function such as metal oxides such as tin indium oxide (hereinafter to be referred as ITO), zinc oxide, zinc tin oxide or gold, copper, silver, the optimized ITO that is chosen as; The 5th, organic function layer can be single layer structure or sandwich construction, is made up of electroluminescent organic material during for single layer structure, can be metal complex or conjugatd polymers etc., and metal complex such as 8-hydroxyquinoline aluminum are (hereinafter to be referred as Alq
3) etc., the conjugatd polymers material mainly comprises polyacetylene, polythiophene (hereinafter to be referred as PEDOT), polycarbazole and derivative thereof, as polyhenylene acetylene (hereinafter to be referred as PPV) etc., comprise a luminescent layer during for sandwich construction and comprise one deck in hole transmission layer or the electron transfer layer at least, wherein luminescent layer is made up of electroluminescent organic material, can be metal complex or conjugatd polymers etc., the material of hole transmission layer is mainly the triphenylamine compounds, as N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1-xenyl-4,4-diamines (hereinafter to be referred as NPB), N, N '-diphenyl-N, N '-two (aminomethyl phenyl)-1,1 '-xenyl-4,4 '-diamines (hereinafter to be referred as TPD), 4,4 '; 4 "-three (3-aminomethyl phenyl aniline) triphenylamines (hereinafter to be referred as MTDATA) etc., the material of electron transfer layer can be metal complex, as Alq
3Deng; 6 is second electrode (negative electrodes), is generally the lower metals of work function such as lithium, magnesium, calcium, strontium, aluminium, indium, or the alloy of they and copper, gold, silver; The 7th, the ground floor of double-deck insulated column (insulating base), material is the Photosensitive organic insulating material, is generally a kind of in Photosensitive PI, eurymeric novolac photoresist, minus thermoprene, the chemical amplification type photoresist, through being preferably Photosensitive PI; The 8th, the second layer of double-deck insulated column (negative electrode next door), material is the Photosensitive organic insulating material, is generally lines cross section after the photoetching and can forms a kind of in the up big and down small photoresist that falls trapezoidal shape, through being preferably negative photoresist.
In conjunction with the accompanying drawings 5, the preferred for preparation method 1 of the organic electroluminescence device that the present invention proposes is elaborated as follows (illustrate: the whole process of preparation of OLEDs is all in cleaning shop enforcement):
1. the sputter transparent conductive film makes first electrode 2 by lithography as first electrode 2 of device on transparency carrier 1
One group of vertical element that is parallel to each other and separates, wherein transparency carrier 1 can be glass or plastics (flexible base
Plate), first electrode, 2 materials are generally metal oxides such as ITO, zinc oxide, zinc tin oxide or gold, copper, silver
Etc. the higher metal of work function, the optimized ITO that is chosen as;
2. spin coating ground floor Photosensitive organic insulating material on above-mentioned first electrode, 2 figures, thickness is 0.5～5 μ m,
Be generally in Photosensitive PI, eurymeric novolac photoresist, minus thermoprene, the chemical amplification type photoresist
A kind of, process is preferably Photosensitive PI, preceding baking post-exposure, and exposure figure is that network structure (only exposes device
The light-emitting zone of picture element and the lead-in wire bonding pad) or list structure (one group perpendicular with first electrode, 2 figures
The vertical element that is parallel to each other and separates), the width of lines is to be determined in interval between the pixel by display resolution
Fixed, live width is 10～50 μ m;
3. at above-mentioned ground floor spin coating second layer Photosensitive organic insulating material on the organic insulating material of overexposure, thickness
Be 0.5～5 μ m, be generally lines cross section after the photoetching and can form in the up big and down small photoresist that falls trapezoidal shape
A kind of, through being preferably negative photoresist, after the preceding baking second layer organic insulating material is carried out the alignment exposure,
Exposure figure is and one group of perpendicular vertical element that is parallel to each other and separates of first electrode, 2 figures, live width ratio
The ground floor line thickness is slightly narrow and the position is placed in the middle thereon, and live width is 5～45 μ m, must be through the light of middle baking if use
Carve glue and also will carry out middle baking;
4. above-mentioned two-layer organic insulating material layer through overexposure is carried out top-down wet development, preferred developer solution is
Two-layer organic insulating material is used identical, if then development successively from top to bottom inequality, back insulating base 7 develops
The cross section of lines forms up-small and down-big shape, and the cross section of negative electrode next door 8 lines forms up big and down small shape
Shape, its hypotenuse have two interior gradually angle [alpha], β that receive, and α＞β, and high-temperature baking makes insulating base
7 and negative electrode next door 8 full solidification, baking temperature is 150～350 ℃;
5. on above-mentioned figure with double-deck insulated column and first electrode 2, continue deposit organic function layer 6, organic functions
Layer can be single layer structure or sandwich construction, is made up of electroluminescent organic material during for single layer structure, can be gold
Metal complex or conjugatd polymers etc., metal complex such as Alq
3Deng, the conjugatd polymers material is main
The conjugatd polymers that comprises polyacetylene, PEDOT, polycarbazole and derivative thereof is as PPV etc.; Be multilayer
Comprise a luminescent layer during structure and comprise one deck in hole transmission layer or the electron transfer layer at least, wherein luminous
Layer is made up of electroluminescent organic material, can be metal complex or conjugatd polymers etc., hole transmission layer
Material be mainly the triphenylamine compounds, as NPB, TPD, MTDATA etc., the material of electron transfer layer can
Be metal complex, as Alq
3Deng;
6. continue second electrode 6 of evaporated metal layer as device on above-mentioned organic function layer 5, metal level is generally
The lower metals of work function such as lithium, magnesium, calcium, strontium, aluminium, indium, or the alloy of they and copper, gold, silver.
In conjunction with the accompanying drawings 6, the preferred for preparation method 2 of the organic electroluminescence device that the present invention proposes is elaborated as follows (illustrate: the whole process of preparation of OLEDs is all in cleaning shop enforcement):
1. with preferred for preparation method 1;
2. spin coating ground floor Photosensitive organic insulating material on above-mentioned first electrode, 2 figures, thickness is 0.5～5 μ m,
Be generally in Photosensitive PI, eurymeric novolac photoresist, minus thermoprene, the chemical amplification type photoresist
A kind of, through being preferably Photosensitive PI, preceding baking but do not expose;
3. spin coating second layer Photosensitive organic insulating material on above-mentioned ground floor organic insulating material, thickness be 0.5～
5 μ m are generally lines cross section after the photoetching and can form a kind of in the up big and down small photoresist that falls trapezoidal shape,
Through being preferably negative photoresist, after the preceding baking second layer organic insulating material is exposed, exposure figure be with
One group of vertical element that is parallel to each other and separates that first electrode, 2 figures are perpendicular, live width are 5～45 μ m, if
Use must also will be carried out middle baking through the photoresist of middle baking, and wet development has second layer formation cross section and goes up greatly down
The lines of little shape;
4. above-mentioned ground floor insulating material is carried out the alignment exposure, exposure figure is that network structure (only exposes the device pixel
The light-emitting zone of point and lead-in wire bonding pad) or list structure (one group with perpendicular mutual of first electrode, 2 figures
Parallel and separate vertical element), live width is slightly wideer than negative electrode next door 8 line thickness, is 10～50 μ m, wet method
The cross section of insulating base 7 lines forms up-small and down-big shape after developing, negative electrode next door 8 lines cross sections
Hypotenuse has two interior gradually angle [alpha], β that receive, and α＞β, and high-temperature baking makes insulating base 7 and the moon
Utmost point next door 8 full solidification, baking temperature are 150～350 ℃;
5. with preferred for preparation method 1;
6. with preferred for preparation method 1.
Embodiment 1:
(whole process of preparation of OLED all cleaning shop implement) is with UV and contain the washing lotion of surfactant, to square resistance is that the ito glass of 15 Ω cleans and dries, wherein the thickness of ITO is 170nm, make ITO by lithography one group of vertical element that is parallel to each other and separates, live width is 400 μ m, and the lines gap is 30 μ m.Clean once more and dry, spin coating ground floor organic insulating material Photosensitive PI DL-1000 then, thickness is 1.5 μ m, toasts 25min in 125 ℃ of convection oven.With ground floor exposure but do not develop, exposure figure is a network structure, promptly only exposes the light-emitting zone and the lead-in wire bonding pad of device picture element, with the line thickness of ITO lines parallel direction be 45 μ m, with the line thickness of ITO lines vertical direction be 40 μ m.Continue spin coating second layer insulating material negative photoresist ZPN1168-30 then on first organic insulator, thickness is 3 μ m.After in 95 ℃ of convection oven, toasting 15min, by alignment process the second layer is exposed, one group of vertical element that is parallel to each other and separates that exposure figure and ITO lines are perpendicular, second layer lines position on ground floor is placed in the middle, width is slightly narrower than ground floor line thickness, and live width is 25 μ m.In 95 ℃ of convection oven, behind the baking 10min, to this two-layer 60s that develops together, form different separately figures with 2.38% Tetramethylammonium hydroxide (hereinafter to be referred as TMAHO) solution.Baking 30min makes insulating base and negative electrode next door full solidification in 250 ℃ of convection oven, the cross section of insulating base lines forms up-small and down-big shape, the cross section of negative electrode next door lines forms up big and down small shape, its hypotenuse has two interior gradually angle [alpha], β that receive, α=70 °, β=45 °.Be 10 in vacuum degree at last
-4Evaporation organic function layer and metal level in the vacuum furnace more than the Pa.Organic function layer is successively by CuPc, NPB and Alq
3Form, thickness is respectively 20nm, 50nm and 50nm.Metal level is made up of LiF/Al, and thickness is respectively 1nm and 400nm.In inert gas, device is encapsulated.It is 3V that device plays bright voltage, luminous even, device lifetime＞5000h.Embodiment 2:
(whole process of preparation of OLED all cleaning shop implement) is with UV and contain the washing lotion of surfactant, to square resistance is that the ito glass of 5 Ω cleans and dries, wherein the thickness of ITO is 200nm, make ITO by lithography one group of vertical element that is parallel to each other and separates, live width is 200 μ m, and the lines gap is 20 μ m.Clean once more and dry, spin coating ground floor organic insulating material Photosensitive PI DL-1000 then, thickness is 1.2 μ m, toasts 25min in 125 ℃ of convection oven.Continue spin coating second layer organic insulating material negative photoresist Tlor-n then immediately on first organic insulator, thickness is 4 μ m, toasts 90s in 110 ℃ of hot plates.Then the second layer is exposed, exposure figure is and one group of perpendicular vertical element that is parallel to each other and separates of ITO lines that live width is 15 μ m, toasts 60s in 110 ℃ of hot plates., show figure and get final product second layer negative photoresist development 30s with 2.38%TMAHO solution.By alignment process ground floor is exposed, the exposure lines are under the second layer and the vertical element slightly wideer than second layer lines, and live width is 30 μ m.Again ground floor is carried out video picture 30s with 2.38%TMAHO solution.Baking 20min makes insulating base and negative electrode next door full solidification in 250 ℃ of hot plates, the cross section of insulating base lines forms up-small and down-big shape, the cross section of negative electrode next door lines forms up big and down small shape, its hypotenuse has two interior gradually angle [alpha], β that receive, α=70 °, β=45 °.Be 10 in vacuum degree at last
-4Evaporation organic function layer and metal level in the vacuum furnace more than the Pa.Organic function layer is successively by CuPc, NPB and Alq
3Form, thickness is respectively 20nm, 35nm and 40nm.Metal level is successively by Mg: Ag alloy (evaporation speed ratio 10: 1, alloy mass was than 4: 1) and Ag form, and thickness is respectively 150nm and 300nm.In inert gas, device is encapsulated.It is 3V that device plays bright voltage, luminous even, is 20mA/cm in current density
2The time luminous efficiency be 4.5lm/W, device lifetime＞5000h.
Although describe the present invention in conjunction with the preferred embodiments, but the present invention is not limited to the foregoing description and accompanying drawing, especially the shape of the insulated column second layer 8 lines cross sections is not limited to shown in the accompanying drawing 4～6, as long as hypotenuse has two angles of advancing in gradually, also have two insulated column structures of the organic electroluminescence device of the present invention's proposition also can prepare by additive method.Should be appreciated that those skilled in the art can carry out various modifications and improvement under the guiding of the present invention's design, claims have been summarized scope of the present invention.
Claims (11)
1. organic electroluminescence device, constitute X-Y two-dimension addressing matrix by one group of first electrode (2) parallel to each other with one group of second electrode (6) parallel to each other vertical with first electrode (2), it has a plurality of pixels, each pixel comprises first electrode (2) and second electrode (6) and is clipped in organic function layer (5) between described two electrodes, on described first electrode (2) figure, have one group with the perpendicular double-deck insulated column that is parallel to each other and separates of first electrode pattern with insulating properties, wherein the figure of insulated column ground floor (7) is network structure or list structure, the cross section of lines has up-small and down-big shape, the lines of the insulated column second layer (8) on the lines of insulated column ground floor (7) and the position placed in the middle, it is characterized in that: the cross section of the insulated column second layer (8) lines is up big and down small shape, its hypotenuse has two interior gradually angle [alpha] of receiving, β, and α＞β.
2. according to the organic electroluminescence device of claim 1, it is characterized in that described α angle is 45 °～80 °, described β angle is 20 °～60 °.
3. according to the organic electroluminescence device of claim 1 or 2, it is characterized in that, the material of described double-deck insulated column ground floor (7), the second layer (8) is the Photosensitive organic insulating material, and described second layer organic insulating material is for applying, expose, all do not influencing when developing described ground floor organic insulating material light sensitivity and inhomogeneity material.
4. according to the organic electroluminescence device of claim 3, it is characterized in that the material of described insulated column ground floor (7) is a kind of in Photosensitive polyimides, eurymeric novolac photoresist, minus thermoprene, the chemical amplification type photoresist.
5. according to the organic electroluminescence device of claim 3, it is characterized in that the material of the described insulated column second layer (8) is that the lines cross section can form a kind of in the up big and down small photoresist that falls trapezoidal shape after the photoetching.
6. according to the organic electroluminescence device of claim 3, it is characterized in that the material of described insulated column ground floor (7) is the Photosensitive polyimides, the material of the described insulated column second layer (8) is a negative photoresist.
7. according to the organic electroluminescence device of claim 1, it is characterized in that described organic function layer is single layer structure or is sandwich construction.
8. method for preparing the described organic electroluminescence device of claim 1, this method may further comprise the steps:
1. go up first electrode (2) of deposit transparent conductive film at transparency carrier (1), make first electrode (2) by lithography one group of vertical element that is parallel to each other and separates as device;
2. on above-mentioned first electrode (2) figure, apply the ground floor organic insulating material, preceding baking post-exposure, exposure figure is network structure or list structure;
3. on the organic insulating material of overexposure, apply second layer organic insulating material at above-mentioned ground floor, the alignment exposure is carried out to second layer organic insulating material in preceding baking back, exposure figure for and one group of perpendicular vertical element that is parallel to each other and separates of first electrode (2) figure, live width is slightly narrower and the position is placed in the middle thereon than ground floor line thickness;
4. above-mentioned two-layer organic insulating material layer through overexposure is carried out top-down wet development, the cross section of insulated column ground floor (7) lines forms up-small and down-big shape after developing, the cross section of the insulated column second layer (8) lines forms up big and down small shape, its hypotenuse has two interior gradually angle [alpha], β that receive, and α＞β, baking makes above-mentioned two-layer insulated column full solidification;
5. on above-mentioned figure with double-deck insulated column and first electrode (2), continue deposit organic function layer (5);
6. on above-mentioned organic function layer (5), continue second electrode (6) of deposited metal as device.
9. method for preparing the described organic electroluminescence device of claim 1, this method may further comprise the steps:
1. go up first electrode (2) of deposit transparent conductive film at transparency carrier (1), make first electrode (2) by lithography one group of vertical element that is parallel to each other and separates as device;
2. on above-mentioned first electrode (2) figure, apply the ground floor organic insulating material, preceding baking but do not expose;
3. on above-mentioned ground floor organic insulating material, apply second layer organic insulating material, expose to second layer organic insulating material in preceding baking back, exposure figure is and one group of perpendicular vertical element that is parallel to each other and separates of first electrode (2) figure that wet development makes the second layer form the lines that cross section has up big and down small shape;
4. above-mentioned ground floor organic insulating material is carried out the alignment exposure, exposure figure is network structure or list structure, live width is slightly wideer than the width of the second layer, the cross section of insulated column ground floor (7) lines forms up-small and down-big shape behind the wet development, the hypotenuse of the insulated column second layer (8) lines cross section has two interior gradually angle [alpha], β that receive, and α＞β, baking makes above-mentioned two-layer insulated column full solidification;
5. on above-mentioned figure with double-deck insulated column and first electrode (2), continue deposit organic function layer (5);
6. on above-mentioned organic function layer (5), continue second electrode (6) of deposited metal as device.
10. according to Claim 8 or the preparation method of 9 organic electroluminescence device, it is characterized in that, step 4. described in behind the wet development baking to make the completely crued baking temperature of above-mentioned two-layer insulated column be 150～350 ℃.
11. according to Claim 8 or the preparation method of 9 organic electroluminescence device, it is characterized in that, step 2., the method that all can adopt rotation to apply of the applied in two coats organic insulating material described in 3..
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| CNA031374352A CN1472994A (en) | 2003-06-23 | 2003-06-23 | Organic electrofluorescence device and producing mehtod thereof |
| CNB200310113793XA CN100372146C (en) | 2003-06-23 | 2003-11-26 | Organic electro luminescence device and its prepn. method |
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| CNA031374352A CN1472994A (en) | 2003-06-23 | 2003-06-23 | Organic electrofluorescence device and producing mehtod thereof |
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