CN109273421A - IGBT module - Google Patents
IGBT module Download PDFInfo
- Publication number
- CN109273421A CN109273421A CN201811078737.XA CN201811078737A CN109273421A CN 109273421 A CN109273421 A CN 109273421A CN 201811078737 A CN201811078737 A CN 201811078737A CN 109273421 A CN109273421 A CN 109273421A
- Authority
- CN
- China
- Prior art keywords
- pedestal
- shell
- igbt
- thermally conductive
- conductive sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/44—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention provides a kind of IGBT module, including pedestal, thermally conductive sheet, igbt chip and shell, the thermally conductive sheet side is connected with pedestal, igbt chip is set to the other side of thermally conductive sheet, the thermally conductive sheet is equipped with coating on the side adjacent with pedestal or igbt chip, the shell and pedestal form sealing space, and insulating oil is equipped between affiliated shell and pedestal.The beneficial effects of the invention are as follows by adopting the above scheme, IGBT module structure is simple, good heat dissipation effect, the above electric current of single chip 300A can be supported.
Description
Technical field
The present invention relates to power technique fields, a kind of particularly IGBT module.
Background technique
IGBT has high-frequency, high voltage, high current, is easy to the excellent performances such as switch, exists as high-power high-frequency switch
It is widely used in inverter, supply convertor, is new-energy automobile and industrial application (such as high-speed rail, wind energy, solar energy
Deng) core devices.Automobile-used frame-type IGBT power module realizes multiple IGBT and diode wafer is connected in parallel on an encapsulation
It is interior.Change voltage by the time that turns on and off of control IGBT, to change output electric current, changes electric motor of automobile torque.
The wide range of applications of IGBT is roughly divided into three ranks according to voltage specification, first is that 600V is hereinafter, in full
Code camera, igniter for automobile etc.；Second is that 600V to 1700V, such as white domestic appliances, new-energy automobile, solar inverter；Third is that
1700V-6500V or more, for smart grid, rail traffic, wind-power electricity generation etc..Currently, China has in different ranks
Some breakthroughs, production domesticization substitution are gradually opened.
Finished product (abbreviation finished product once) after the completion of general IGBT module encapsulation, encapsulation is air-cooled using aluminium radiator fin
Mode radiates to chip, with epoxy resin to chip package at shell.That heat dissipation effect is bad, will lead to chip entirety
Temperature increases, since potsherd and copper base have different thermal expansion coefficients, when temperature reach a certain height, igbt chip
It can burst apart, epoxy resin shell can be detached from substrate because bursting apart.Chip cracks are caused to be damaged.
Summary of the invention
Simple, good heat dissipation effect IGBT module that the object of the present invention is to provide a kind of structures, can support single chip
300A or more electric current.
The technical scheme is that
IGBT module, including pedestal, thermally conductive sheet, igbt chip and shell, the thermally conductive sheet side are connected with pedestal, IGBT
Chip is set to the other side of thermally conductive sheet, and the thermally conductive sheet is equipped with coating on the side adjacent with pedestal or igbt chip, institute
It states shell and pedestal forms sealing space, insulating oil is equipped between affiliated shell and pedestal.
Igbt chip, insulated gate bipolar transistor are by BJT (double pole triode) and MOS (insulated-gate type field effect
Pipe) composition compound full-control type voltage driven type power semiconductor；IGBT module is by IGBT (insulated gate bipolar crystal
Tube chip) with FWD (freewheeling diode chip) by specific circuit bridge encapsulate made of modularized semiconductor product；Encapsulation
IGBT module afterwards directly applies in the equipment such as frequency converter, UPS uninterruptible power supply.
In the present invention, the functional component of IGBT is packaged in the seal cavity of shell and pedestal composition, and in the cavity
Injection insulating oil, compared with the existing technology in " air-cooled " radiating mode, insulating oil can be efficient from igbt chip by heat
Conduction radiated outward by the biggish shell of area to shell, also, the radiating mode of insulating oil keeps IGBT module whole
Temperature is uniform.
In addition, insulating oil coats igbt chip completely, make igbt chip and air exclusion, prevent from aoxidizing, effectively extends
The IGBT service life.
The thermally conductive sheet is alumina ceramic plate.
The alumina ceramic plate with a thickness of 0.5-2mm, the preferred alumina ceramic plate with a thickness of 1mm.
The content of aluminium oxide is 92-98% in the alumina ceramic plate, it is preferred that is aoxidized in the alumina ceramic plate
The content of aluminium is 96%.
The present invention is provided with alumina ceramic plate between igbt chip and pedestal, and the potsherd of above structure feature is led
Hot coefficient is 24W/M.K, and heat transfer efficiency is high, is heated evenly, rapid heat dissipation.
The coefficient of expansion of copper is 17.7 × 10-6 meter/DEG C, and the potsherd of above structure is in 25-300 DEG C of the coefficient of expansion
6.7 × 10-6 meter/DEG C, potsherd play over effect between igbt chip and pedestal, prevent the swollen of igbt chip and pedestal
Swollen coefficient is different, and igbt chip is made to burst apart.Simultaneously as there is the heat-conducting effect of insulating oil, potsherd is being prevented relative to pedestal
Due to the coefficient of expansion it is different caused by potsherd burst apart the problem of aspect, also have great improvement.
Preferably, the insulating oil pour point is -45 DEG C.
The pedestal and shell are metal material.
The pedestal and shell are copper material, relative to the shell of traditional epoxy resin, the thermally conductive effect of the shell of metal class
Fruit is more preferable, selects the shell of copper material, keeps the casting of shell and sanding property more excellent.
In production process of the invention, there are oil filler points on shell, after being tightly connected between shell and pedestal, to shell
Interior injection insulating oil, is then sealed oil filler point with tin solder.
Preferably, the coating is copper material.Igbt chip is welded on thermally conductive sheet by the way of tin welding, is led
Backing is also to be fixed on pedestal by way of tin welding, and the material of thermally conductive sheet and common tin solder be not affine, thermally conductive
Piece two sides form copper coating by vacuum ion sputtering plated film, help to process, improve the stability of product.
Preferably, the coating with a thickness of 5-20 μm.
The advantages and positive effects of the present invention are: due to the adoption of the above technical scheme, IGBT module good heat dissipation effect,
Service life is long.
Detailed description of the invention
Fig. 1 is structural schematic diagram schematic diagram of the invention
In figure:
1, pedestal 2, solder 3, coating
4, thermally conductive sheet 5, igbt chip 6, shell
7, insulating oil
Specific embodiment
As shown in Figure 1, a kind of IGBT module of the present invention,
Including pedestal 1, thermally conductive sheet 4, igbt chip 5 and shell 6,4 side of thermally conductive sheet is welded with pedestal 1 by solder 2
It connects, igbt chip 5 is fixed on the other side of thermally conductive sheet 4 by solder 2, and the thermally conductive sheet 4 is adjacent with pedestal 1 or igbt chip 5
Side on be equipped with coating 3, the shell 6 forms sealing space with pedestal 1, and insulation is equipped between affiliated shell 6 and pedestal 1
Oil 7.
The thermally conductive sheet 4 is alumina ceramic plate.
The alumina ceramic plate with a thickness of 1mm.
The content of aluminium oxide is 96% in the alumina ceramic plate.
The insulating oil pour point is -45 DEG C.
The pedestal and shell are metal material.
The pedestal 1 and shell 6 are copper material.
The coating 3 is copper material.
The production process of this example: there are oil filler points on shell 6, after being tightly connected between shell 6 and pedestal 1, to shell
Insulating oil 7 is injected in body 6, is then sealed oil filler point with tin solder.
One embodiment of the present invention has been described in detail above, but the content is only preferable implementation of the invention
Example, should not be considered as limiting the scope of the invention.It is all according to all the changes and improvements made by the present patent application range
Deng should still be within the scope of the patent of the present invention.
Claims (8)
1.IGBT module, it is characterised in that: including pedestal, thermally conductive sheet, igbt chip and shell, the thermally conductive sheet side and pedestal
It is connected, igbt chip is set to the other side of thermally conductive sheet, and the thermally conductive sheet is all provided on the side adjacent with pedestal or igbt chip
There is coating, the shell and pedestal form sealing space, insulating oil are equipped between affiliated shell and pedestal.
2. IGBT module according to claim 1, it is characterised in that: the thermally conductive sheet is alumina ceramic plate.
3. IGBT module according to claim 2, it is characterised in that: the alumina ceramic plate with a thickness of 0.5-2mm.
4. IGBT module according to claim 3, it is characterised in that: the content of aluminium oxide is in the alumina ceramic plate
92-98%.
5. IGBT module according to claim 1, it is characterised in that: the insulating oil pour point is -45 DEG C.
6. IGBT module according to claim 1, it is characterised in that: the pedestal and shell are metal material.
7. IGBT module according to claim 6, it is characterised in that: the pedestal and shell are copper material.
8. IGBT module according to claim 1, it is characterised in that: the coating is copper material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811078737.XA CN109273421A (en) | 2018-09-17 | 2018-09-17 | IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811078737.XA CN109273421A (en) | 2018-09-17 | 2018-09-17 | IGBT module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109273421A true CN109273421A (en) | 2019-01-25 |
Family
ID=65188525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811078737.XA Pending CN109273421A (en) | 2018-09-17 | 2018-09-17 | IGBT module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109273421A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1197566A (en) * | 1997-09-22 | 1999-04-09 | Hitachi Ltd | Insulating substrate and power semiconductor module using the same |
| CN1219767A (en) * | 1997-12-08 | 1999-06-16 | 东芝株式会社 | Package for semiconductor power device and method for assembling the same |
| JP2008098584A (en) * | 2006-10-16 | 2008-04-24 | Fuji Electric Device Technology Co Ltd | Semiconductor device |
| CN204792789U (en) * | 2015-07-10 | 2015-11-18 | 青岛航天半导体研究所有限公司 | Power drive ware |
| JP2016181536A (en) * | 2015-03-23 | 2016-10-13 | 住友ベークライト株式会社 | Power semiconductor device |
-
2018
- 2018-09-17 CN CN201811078737.XA patent/CN109273421A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1197566A (en) * | 1997-09-22 | 1999-04-09 | Hitachi Ltd | Insulating substrate and power semiconductor module using the same |
| CN1219767A (en) * | 1997-12-08 | 1999-06-16 | 东芝株式会社 | Package for semiconductor power device and method for assembling the same |
| JP2008098584A (en) * | 2006-10-16 | 2008-04-24 | Fuji Electric Device Technology Co Ltd | Semiconductor device |
| JP2016181536A (en) * | 2015-03-23 | 2016-10-13 | 住友ベークライト株式会社 | Power semiconductor device |
| CN204792789U (en) * | 2015-07-10 | 2015-11-18 | 青岛航天半导体研究所有限公司 | Power drive ware |
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