CN109273344A - A kind of non-contact object surface charge photomultiplier tube amplifier - Google Patents
A kind of non-contact object surface charge photomultiplier tube amplifier Download PDFInfo
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- CN109273344A CN109273344A CN201810950349.XA CN201810950349A CN109273344A CN 109273344 A CN109273344 A CN 109273344A CN 201810950349 A CN201810950349 A CN 201810950349A CN 109273344 A CN109273344 A CN 109273344A
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- charge
- photocathode
- photomultiplier tube
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- metal
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/02—Tubes in which one or a few electrodes are secondary-electron emitting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/24—Arrangements for measuring quantities of charge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/08—Cathode arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/10—Dynodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/20—Dynodes consisting of sheet material, e.g. plane, bent
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The present invention relates to a kind of non-contact object surface charge photomultiplier tube amplifiers, belong to signal detection technique field.Its principle is that the intensity of incident light is decided by pass through the number of photons of specific vertical area in the unit time, also just increased in unit time by the number of photons of metal surface, then photon also increases with the electron collision number in metal, thus also increase in the unit time from the photoelectron that metal surface escapes, photoelectric current also increases with it；Equally, if incident intensity is constant, metal surface charge increases, so that photon also increases with the electron collision number in metal, thus also increases in the unit time from the photoelectron that metal surface escapes, photoelectron is constantly doubled electron number using electric multiplier tube, the electronics that anode is finally collected into can increase by 104~108 times, the characteristics of because of photomultiplier tube high sensitivity and low noise, can detect the faint charge signal of sample surfaces, will be widely applied in charge detection field.
Description
Technical field
The present invention relates to a kind of non-contact object surface charge photomultiplier tube amplifiers, belong to signal detection technique neck
Domain.
Background technique
The main function of charge amplifier is the quantity of electric charge to be become corresponding output voltage, it is desirable that input impedance pole
Height, output have good integral relation to input.Charge amplifier is also operational amplifier in fact, the difference is that charge amplification
Device and normal operation amplifier are also difference: input terminal Li-COMS technique keeps the bias current of input minimum, substantially all
It is fA rank.Input stage is relatively weak, internal all to protect circuit without ESD etc. because of charge amplifier input impedance problem.
The bandwidth of amplifier is all very narrow, because the low pressure low drain electrical characteristics of Low dark curient metal-oxide-semiconductor, but the dynamic property of metal-oxide-semiconductor and mutual conductance are all
It is not high.Its practical low bias current operational amplifier of circuit can also reach requirement, and piezoelectric patches is static characteristic element, and output frequency exhales characteristic
It is also very good, but output impedance and frequency have certain relationship.But piezoelectric patches still has certain output impedance, right and wrong
Normal height, the input impedance of operational amplifier directly affect the sensitivity of piezoelectric patches (impedance matching).In the electricity of charge amplifier
Lu Zhong, what is generallyd use is operational amplifier.Charge amplifier is usually to detect to the quantity of electric charge, it is desirable that charge has integral to imitate
It answers, such as piezoelectric transducer generates charge when being under pressure, the quantity of electric charge is different with the difference of pressure.This kind of charge
Detection, the quantity of electric charge and operational amplifier contact with each other.There are also one kind to detect, and is exactly that the body surface quantity of electric charge is examined
It surveys, the charge density on this kind of detection object surfaces is bigger, and voltage is higher, and when detection, cannot destroy object
The form of surface charge density, this kind of special requirement make in detection process, and the surface of sensor and object cannot contact, because
This needs contactless sensor, and the voltage as caused by the quantity of electric charge of body surface is extremely faint, while again
Meet contactless requirement, there is presently no effective means for this kind of detections, and the detection for electrostatic charge is typically only capable to
Use electrometer, it is clear that electrometer is unable to satisfy requirement, therefore this problem have it is to be solved.
Summary of the invention
The purpose of the present invention is to provide a kind of non-contact object surface charge photomultiplier transit image intensifers.
The technical scheme is that a kind of non-contact object surface charge photomultiplier tube amplifier, by charge detection
Photocathode, light input system, dynode, anode, power-supply system, electron multiplication system signal output end are constituted；One kind is non-to be connect
The front end for touching body surface charge photomultiplier tube amplifier is charge detection photocathode, charge detection photocathode front end face
Sectional area S, testee surface charge density are ne/ Δ S, and Δ S is tested area, and ne is the quantity of electric charge on Δ S, meet S > Δ
Between S, S=Δ S*105%-120%, 0.001~1mm of distance of reaction；Charge detection photocathode rear end face is arc, constant light
The constant intensity light beam of input system is that the curved surfaces central area is irradiated to through glass window, and light irradiates cathode and generates light
Electrical effect emits primary electron, and dynode D is made of photoemissive material metal, and electronics is from photocathode to each dynode
D1, D2... Dn, the positive integer of n≤6, then on anode, power-supply system voltage added by D1, D2... Dn is incremental according to this
, the electronics generated on each photocathode accelerates under electric field action, focuses through cambered surface, successively bombards D1, D2...
Dn generates more electronics, reaches anode after 6 or more dynodes, the photoelectron through doubling by anode collect and
Output light electric current generates signal voltage A in load, constitutes electron multiplication system signal output end.
It is vacuumized inside non-contact object surface charge photomultiplier tube, charge detection photocathode integrally uses made of metal
At charge detection photocathode rear end face uses photoemission metal material plated film.
The light beam of constant light input system is constant intensity light beam during operation, and light source frequency is fixed frequency, can root
Intensity of illumination is adjusted according to detection charge density.
Electron multiplication system signal output end is provided with filter.
Working principle: when incident intensity increases, according to photon it is assumed that the intensity of incident light (is led to i.e. in the unit time
Cross the luminous energy of specific vertical area) it is decided by pass through the number of photons of specific vertical area in the unit time, pass through in the unit time
The number of photons of metal surface also just increases, and then, photon also increases with the electron collision number in metal, thus in the unit time
The photoelectron escaped from metal surface also increases, and electric current also increases with it；Equally, if incident intensity is constant, metal
Surface charge increases, so that photon also increases with the electron collision number in metal, thus escapes in the unit time from metal surface
Photoelectron out also increases, and electric current also increases with it.The energy for the electrons absorption photon being irradiated to by light beam, but wherein machine
System in accordance be it is a kind of it is non-have entirely i.e. completely without criterion, all energy of photon must all be absorbed, for overcoming work function, otherwise
This energy can be released.If the energy that electron institute absorbs can overcome work function, and also dump energy, then this residual energy
Amount can become kinetic energy of the electronics after being launched.
Work function W is least energy required for launching a photoelectron from metal surface.If being transformed into frequency
From the point of view of angle, the frequency of photon has to be larger than the limiting frequency of metallicity, can just give the enough energy of electronics and overcome evolution
Function.Relationship between work function and limiting frequency v0 are as follows: W=h*v0, wherein h is Planck's constant, be light frequency be h*v0
The energy of photon.After overcoming work function, photoelectronic maximum kinetic energy KmaxFor Kmax=hv-W=h(v-v0) wherein, hv is optical frequency
Rate is had by the photon of v and by the energy of Electron absorption.
Actual requirement kinetic energy must be positive value, and therefore, light frequency has to be larger than or be equal to limiting frequency, photoelectric effect ability
Occur.To avoid generating excessive photoelectric current, actual charge signal is covered, the frequency of light used in the present invention is slightly larger than pole
The illumination of frequency limit rate, light reduces as far as possible, needs to carry out repeatedly intensity of the comparative experiments to determine illumination, so that photoelectric effect
The density of testee surface charge can be characterized.
The present invention is using multiplication polar form photomultiplier tube: multiplication polar form photomultiplier tube is by photocathode, multiplier stage and anode
Deng composition, by glass-encapsulated, internal high vacuum, multiplier stage is made of a series of dynodes again, and each dynode work is preceding
Under the higher voltage of grade.Photon strikes photocathode material generates photoelectron after overcoming the work function of photocathode, through electric field acceleration
After focusing, with higher energy impact first order multiplier tube, emit the electronics of more low energy, these electronics are successively added
Fast multiplication by stages pole downwards is hit, and a series of geometry multiplication by stages is caused, and last electronics reaches anode, and charge adds up to be formed sharp
Current impulse can characterize the photon of input.
During the test, charge detection photocathode (4) is made of metal, when charge detection photocathode (4) are close to tested
When object (1) surface, there are test charge (2), charge detection photocathode (4) front ends can generate charge inducing on testee surface
It (3), is positive charge, charge inducing produced by charge detection photocathode (4) rear end is negative electrical charge, and light input system (5) light shines
It is mapped to charge detection photocathode (4) rear end face, generates external photoeffect, photocathode excites photoelectrons into vacuum.These light
Electronics enters dynode system by focusing electrode electric field, and is amplified by the multiplication that further Secondary Emission obtains.Then amplification
Electronics afterwards is used anode to collect and is exported as signal.Due to it using secondary make evolution photo-multiplier, obtain
Much higher than the sensitivity of photoelectric tube, it is capable of measuring faint optical signal.Photomultiplier tube includes cathode chamber and by several dynodes (6)
Secondary Emission dynode system two parts of composition (see figure).The structure of cathode chamber is related with the size and shape of photocathode K, it
Effect is the electron focusing first dynode D1 minimum in area ratio time that cathode is generated by external photoeffect under light illumination
Surface on.Secondary Emission dynode system is most complicated part.Dynode mainly can be in smaller incident electron energy by those
Under there is the material of higher sensitivity and secondary emissionratio to be made.Common dynode material has the silver-colored magnesium of antimony caesium, oxidation
Alloy and the copper beryllium alloy of oxidation etc..The shape of dynode, which should have, to be conducive to the electronics that previous stage emits being collected into next pole.?
Successively added with the positive voltage gradually increased in each dynode (6) D1, D2, D3 ... and anode A, and the voltage between two neighboring pole
Difference should make secondary emissionratio be greater than 1.In this way, the electronics of photocathode transmitting is under the action of D1 electric field with high fast direction dynode
D1 generates more secondary emission electrons, and then these electronics fly under the action of D2 electric field to D2 again.Under so continuing
It goes, the secondary emission electron that excitation is multiplied by each photoelectron is finally collected by anode.These impact the electronics energy of time pole
Time pole is set to discharge more electronics, they are focused on second of pole again.In this way, generally doubled more than ten times, times magnification
Number can reach 108~1010.Finally, the anode in high potential is collected into the photoelectric current being exaggerated.Export electric current and incident light subnumber
It is directly proportional.The whole process time about 10-8Second.There are two disadvantages for photomultiplier tube: when 1. sensitivity is because of strong illumination or because of irradiation
Between it is too long and reduce, partly restore again after stopping irradiation, this phenomenon is known as " tired "；2. time pole surface each point sensitivity
Unevenly.
Operation characteristic
1. stability
The stability of photomultiplier tube is determined by many factors such as device self character, working condition and environmental conditions.Pipe
It is many that son exports unstable situation during the work time, mainly has:
A. it manages and is jumped caused by bad interior electrode welding, connection loosing, the poor contact of cathode elastic slice, interpolar point discharge, arcing etc.
Jump property shakiness phenomenon, signal are suddenly big or suddenly small.
B. the wild effect of the continuity of the anode output too big generation of electric current and fatigability.
C. influence of the environmental condition to stability.Environment temperature increases, tube sensitivity decline.
D. wet environment causes to leak electricity between pin, causes dark current increase and shakiness.
E. ambient electromagnetic field interference causes work unstable.
2. maximal work voltage limit operating voltage refers to the upper voltage limit that pipe allows to apply.Higher than this voltage, pipe
Son generates electric discharge and even punctures.
Beneficial effect
Photomultiplier transit of the present invention is established in external photoeffect, secondary and electron-optical theoretical basis, and height is combined
The features such as gain, low noise, high-frequency response and big signal reception area are a kind of with high sensitivity and ultrafast time response
Photosensitive electron tube, can work in ultraviolet, visible and near infrared region spectral regions.With noise, low (dark current is less than
1nA), the features such as response is fast, receiving area is big has good development potentiality.
Detailed description of the invention
Fig. 1 is main view the schematic diagram of the section structure of the present invention.
Each label in figure are as follows: 1. testees；2. test charge；3. charge inducing；4. charge detection photocathode；5. light
Input system；6. dynode；7. anode；8. power-supply system；9. electron multiplication system signal exports.
Specific embodiment
Embodiment 1: the technical scheme is that including by charge detection photocathode 4, light input system 5, dynode
6, anode 7, power-supply system 8, electron multiplication system signal output end 9 are constituted；A kind of non-contact object surface charge photomultiplier transit
The front end of pipe amplifier is charge detection photocathode 4,4 front end face sectional area S of charge detection photocathode, 1 table of testee
The density of surface charge is ne/ Δ S, and Δ S is tested area, and ne is the quantity of electric charge on Δ S, meets S > Δ S, S=Δ S*105%-120%,
Between 0.001~1mm of distance of reaction；4 rear end face of charge detection photocathode is arc, constant light input system 5 it is constant strong
Degree light beam is that the curved surfaces central area is irradiated to through glass window, and light irradiates cathode and generates the primary electricity of photoelectric effect transmitting
Son, dynode 6D are made of photoemissive material metal, from photocathode K to each dynode D1, D2... again to anode 7
On, voltage added by power-supply system 8 is each electronics incremental according to this, generate on photocathode K, is added under electric field action
Speed is focused through cambered surface, is bombarded second dynode D2, is generated more secondary electrons ..., by 6 or more dynodes
After reach the last one dynode, i.e. anode 7, the photoelectron through doubling is collected and output light electric current by anode 7, is produced in load
Raw signal voltage A, constitutes electron multiplication system signal output end 9.
It is vacuumized inside non-contact object surface charge photomultiplier tube, charge detection photocathode 4 is whole to use metal
It is made, 4 rear end face of charge detection photocathode uses photoemission metal material plated film.
The light beam of constant light input system 5 is constant intensity light beam during operation, and light source frequency is fixed frequency, can root
Intensity of illumination is adjusted according to detection charge density；Electron multiplication system signal output end 9 is provided with filter.
Since gain of photomultiplier height and response time are short, and due to its output electric current and incident photon and cathode table
Face electron number is directly proportional, its advantage is that: measurement accuracy is high, can measure the quick variation of charge.Cerium-antimonide photocathode can be selected
Multiplier tube, such as RCA1P21.The very big quantum efficiency of this photomultiplier tube is 20% or so near 4200 angstroms.There are also one kind
The photomultiplier tube of double alkali photocathodes, such as GDB-53.The numerical value of its signal-to-noise ratio is order of magnitude greater compared with RCA1P21, and undercurrent is very
It is low.
Common photomultiplier tube can only once measure an information, i.e. port number is 1.Since port number is thin by anode end
A channels up to a hundred are only accomplished in the limitation of wire, but this is sufficient for the detection of faint charge variation.
The present invention has been described in detail through specific embodiments, but these are not constituted to limit of the invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these are also answered
It is considered as protection scope of the present invention.
Claims (1)
1. a kind of non-contact object surface charge photomultiplier tube amplifier, it is characterised in that: by charge detection photocathode
(4), light input system (5), dynode (6), anode (7), power-supply system (8), electron multiplication system signal output end (9) structure
At；A kind of front end of non-contact object surface charge photomultiplier tube amplifier is charge detection photocathode (4), charge detection
Photocathode (4) front end face sectional area S, testee (1) surface charge density are ne/ Δ S, and Δ S is tested area, and ne is Δ
The quantity of electric charge on S meets S > Δ S, between S=Δ S*105%-120%, 0.001~1mm of distance of reaction；Charge detection photocathode
(4) rear end face is arc, and the constant intensity light beam of constant light input system (5) is to be irradiated to the curved surfaces through glass window
Central area, light irradiate cathode and generate photoelectric effect transmitting primary electron, and dynode (6) D is by photoemissive material made of metal
At electronics is from photocathode (4) to each dynode D1, D2... Dn, the positive integer of n≤6, then arrives on anode (7), power supply system
(8) voltage added by D1, D2... Dn of uniting is electronics that is incremental according to this, generating on each photocathode (4), in electric field
Effect is lower to be accelerated, focuses through cambered surface, is successively bombarded D1, D2... Dn, more electronics is generated, by 6 or more multiplications
Anode (7) extremely are reached afterwards, the photoelectron through doubling is collected and output light electric current by anode (7), and signal voltage is generated in load
A is constituted electron multiplication system signal output end (9)；
It is vacuumized inside non-contact object surface charge photomultiplier tube, charge detection photocathode (4) integrally uses made of metal
At charge detection photocathode (4) rear end face uses photoemission metal material plated film；Electron multiplication system signal output end
(9) it is provided with filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810950349.XA CN109273344B (en) | 2016-04-04 | 2016-04-04 | Non-contact object surface charge photomultiplier amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610199752.4A CN105789016B (en) | 2016-04-04 | 2016-04-04 | A kind of non-contact object surface charge photomultiplier amplifier |
| CN201810950349.XA CN109273344B (en) | 2016-04-04 | 2016-04-04 | Non-contact object surface charge photomultiplier amplifier |
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| CN201610199752.4A Division CN105789016B (en) | 2016-04-04 | 2016-04-04 | A kind of non-contact object surface charge photomultiplier amplifier |
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| CN109273344A true CN109273344A (en) | 2019-01-25 |
| CN109273344B CN109273344B (en) | 2020-09-04 |
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| CN201610199752.4A Active CN105789016B (en) | 2016-04-04 | 2016-04-04 | A kind of non-contact object surface charge photomultiplier amplifier |
| CN201810950381.8A Active CN109273345B (en) | 2016-04-04 | 2016-04-04 | Non-contact object surface charge photomultiplier amplifier |
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| CN201810950381.8A Active CN109273345B (en) | 2016-04-04 | 2016-04-04 | Non-contact object surface charge photomultiplier amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110927472A (en) * | 2019-11-04 | 2020-03-27 | 华中科技大学 | Independent-measurement isolated conductor charge control method |
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| CN111427403B (en) * | 2020-04-01 | 2021-11-19 | 华中科技大学 | Potential control method and device of isolated conductor based on optical power compensation |
| CN111751632B (en) * | 2020-07-22 | 2023-03-14 | 北京卫星环境工程研究所 | Space environment weak charge measuring system |
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| JPH06102248A (en) * | 1992-09-21 | 1994-04-15 | Yokogawa Electric Corp | Induction coupling plasma mass spectroscope |
| US20070262234A1 (en) * | 2006-05-05 | 2007-11-15 | Virgin Islands Microsystems, Inc. | Stray charged particle removal device |
| CN104022009A (en) * | 2014-06-16 | 2014-09-03 | 中国科学院高能物理研究所 | Photomultiplier system and photomultiplier fast signal reading method |
| CN104749415A (en) * | 2015-03-09 | 2015-07-01 | 中国船舶重工集团公司第七一九研究所 | Electron multiplier based detector |
| CN206022306U (en) * | 2016-04-04 | 2017-03-15 | 陈蜀乔 | A kind of non-contact object surface charge photomultiplier tube amplifier |
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| GB2475063A (en) * | 2009-11-04 | 2011-05-11 | Univ Leicester | Charge detector for photons or particles. |
| US9024246B2 (en) * | 2011-12-19 | 2015-05-05 | Princeton Lightwave, Inc. | Two-state negative feedback avalanche diode having a control element for determining load state |
| CN203150516U (en) * | 2013-03-25 | 2013-08-21 | 南京中纽科技有限公司 | A photoelectric signal converting and processing device |
| CN103792004A (en) * | 2014-01-22 | 2014-05-14 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet spherical micro-channel plate photo counting and imaging detector |
| CN204905211U (en) * | 2015-06-03 | 2015-12-23 | 陈灵燕 | Light electric signal transition device |
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2016
- 2016-04-04 CN CN201810950349.XA patent/CN109273344B/en active Active
- 2016-04-04 CN CN201610199752.4A patent/CN105789016B/en active Active
- 2016-04-04 CN CN201810950381.8A patent/CN109273345B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06102248A (en) * | 1992-09-21 | 1994-04-15 | Yokogawa Electric Corp | Induction coupling plasma mass spectroscope |
| US20070262234A1 (en) * | 2006-05-05 | 2007-11-15 | Virgin Islands Microsystems, Inc. | Stray charged particle removal device |
| CN104022009A (en) * | 2014-06-16 | 2014-09-03 | 中国科学院高能物理研究所 | Photomultiplier system and photomultiplier fast signal reading method |
| CN104749415A (en) * | 2015-03-09 | 2015-07-01 | 中国船舶重工集团公司第七一九研究所 | Electron multiplier based detector |
| CN206022306U (en) * | 2016-04-04 | 2017-03-15 | 陈蜀乔 | A kind of non-contact object surface charge photomultiplier tube amplifier |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110927472A (en) * | 2019-11-04 | 2020-03-27 | 华中科技大学 | Independent-measurement isolated conductor charge control method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109273345A (en) | 2019-01-25 |
| CN109273345B (en) | 2020-09-11 |
| CN105789016B (en) | 2018-09-28 |
| CN105789016A (en) | 2016-07-20 |
| CN109273344B (en) | 2020-09-04 |
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