CN103792004A - Ultraviolet spherical micro-channel plate photo counting and imaging detector - Google Patents
Ultraviolet spherical micro-channel plate photo counting and imaging detector Download PDFInfo
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- CN103792004A CN103792004A CN201410029500.8A CN201410029500A CN103792004A CN 103792004 A CN103792004 A CN 103792004A CN 201410029500 A CN201410029500 A CN 201410029500A CN 103792004 A CN103792004 A CN 103792004A
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Abstract
The invention relates to an ultraviolet spherical micro-channel plate photo counting and imaging detector. The ultraviolet spherical micro-channel plate photo counting and imaging detector comprises an photoelectric cathode, a micro-channel plate, a position sensitive anode, an input window, a metal output window, a position reading circuit and a computer image output circuit, wherein the photoelectric cathode, the micro-channel plate and the position sensitive anode are arranged in a vacuum shell from top to bottom; the input window is arranged at the front end of the vacuum shell; the metal output window is arranged at the rear end of the vacuum shell and provided with a metal output electrode; the position reading circuit and the computer image output circuit are placed on the outer portion of the vacuum shell. The input window is connected with the vacuum shell and the metal output window in a sealed mode to form a vacuum airtight structure which is integrally formed. A layer of conductive thin capable of allowing ultraviolet rays to transmit is plated on the inner surface of the input window and the photoelectric cathode is manufactured on the conductive film. The input window and the micro-channel plate are in the shape of convex spherical faces with the curvature radius being the same. The ultraviolet spherical micro-channel plate photo counting and imaging detector can reduce the spherical aberration of a large-view-field imaging system and improve the imaging quality of the system, and can be used as a single-photo counting detector. The ultraviolet spherical micro-channel plate photo counting and imaging detector has single-photo sensitivity and meanwhile, an ultraviolet cathode has very low noise.
Description
Technical field
The invention belongs to ultraviolet detection field, can be used for ultraviolet space astronomy, ultraviolet space exploration, ultraviolet alarm, also can be used for the aspects such as Forest Fire police commissioner surveys, the spark discharge detection of hi-line; Specifically relate to a kind of ultraviolet spherical microchannel board photon counting imaging detector.
Background technology
Planar microchannels plate is a kind of electron tube of two-dimentional continuous electronic multiplication, and it is to be arranged and form by certain geometric scheme by many passages with continuous electronic multiplication ability.Add certain voltage at its two ends, can obtain very high electron gain, extremely faint Two-dimensional electron image is doubled and amplified.At present, microchannel plate is mainly used in the fields such as photon counting imaging detection and lll night vision imaging, uses microchannel plate to be widely used in the fields such as space science (space astronomy, space plasma physics, survey of deep space etc.), synchrotron radiation physics, chemistry, material science, optics (fluorescence imaging, Raman spectrum) and biomedicine as the position sensitive photon counting imaging detector of image intensifier.
For large field optical imaging system, especially ultraviolet is approached missile warning system, its visual field meets or exceeds 90 °, planar microchannels plate can not meet image quality requirement, spherical microchannel board can be eliminated the distortion that spherical aberration causes, and then improve the image quality of large field optical imaging system, therefore, preparing spherical microchannel board ultraviolet detector is the problem that insider very pays close attention to.The Chinese invention patent close with the present invention is the mandate patent of invention " a kind of induced charge formation method of based semiconductor layer " that the patent No. of Xian Inst. of Optics and Precision Mechanics, Chinese Academy of Sciences is 200810184963.6, and the patent No. mandate patent of invention " single photon counting formatter " that is 200710018631.6.The patent No. is that 200810184963.6 patent of invention relates to and a kind ofly receives the electron cloud from microchannel plate with semiconductor layer, and on the position sensitive anode that is placed in sealed tube body outside, induce the photon counting imaging method of charge pulse, the image non-linear that the electronic secondary that the method has avoided electron cloud and metal anode direct effect to produce causes, but because sealed tube body uses the substrate that is coated with semiconductor layer as output window, and the optimum thickness of this output window is only 1mm, be not suitable for for the application that need to use heavy caliber microchannel plate; This invention simultaneously only relates to planar detector, is not suitable for the imaging system of large visual field.The patent No. is that 200710018631.6 mandate patent of invention also only relates to the plane photon counting imaging detector that uses the metal position sensitive anode that is positioned at sealed tube body inside directly to receive microchannel plate electron cloud, the image non-linear that electron cloud and the electronic secondary of metal anode direct effect generation can cause.
Summary of the invention
The object of the invention is to for the technical matters existing in prior art, for the faint ultraviolet imagery of large visual field is surveyed the ultraviolet spherical microchannel board photon counting imaging detector that image linearity a kind of sphere, that applicable heavy caliber is prepared, had is provided.
In order to solve the problems of the technologies described above, technical scheme of the present invention is specific as follows:
A kind of ultraviolet spherical microchannel board photon counting imaging detector, comprising:
Be placed in vaccum case the photocathode, microchannel plate, the position sensitive anode that arrange from top to bottom;
Be placed in the input window of vaccum case front end;
Be placed in the metal output window with metal output electrode of vaccum case rear end; And
Be placed in position sensing circuit and the computer picture output circuit of vaccum case outside;
Described input window, be formed as one the structure of vacuum tight with vaccum case, the sealing-in of metal output window;
On the inside surface of described input window, be coated with the ultraviolet conductive film of one deck transmissive, described photocathode is made on this conductive film;
Described input window and microchannel plate are the protruding spherical shape that radius-of-curvature is identical.
In technique scheme, described position sensitive anode from top to bottom comprises: resistive layer, substrate and metal position sensitive anode; The material of described substrate is nonconducting nonmetal, and thickness is 1mm.
In technique scheme, described metal position sensitive anode is delay line anode, and the square resistance scope of described resistive layer is 1M Ω/～10M Ω/; The relative dielectric constant of described substrate is for being greater than 10.
In technique scheme, described metal position sensitive anode is spline shape anode; The square resistance scope of described resistive layer is 80M Ω/～100M Ω/; The relative dielectric constant of described substrate is 2～5.
In technique scheme, the vacuum gap of described photocathode and microchannel plate is 0.1mm～0.3mm.
In technique scheme, the vacuum gap between described microchannel plate and resistive layer is 1mm～3mm.
In technique scheme, described microchannel plate is two or three microchannel plate structures that are operated in step-by-step counting pattern.
In technique scheme, described vaccum case is ceramic kovar alloy shell.
In technique scheme, the material of described input window is magnesium fluoride or calcium fluoride, and thickness is 3mm～5mm; The material of described photocathode is alkali halogen compound; The conductive film being coated with on described input window inside surface is the aluminium film that 100nm is thick.
In technique scheme, described metal output window is the kovar alloy part that is prepared with metal electrode and is applicable to vacuum seal, described metal electrode and described metal output window electrical isolation, and described metal output window can be used as the ground of detector.
The present invention has following beneficial effect:
1, the present invention can reduce the spherical aberration of large view field imaging system, improves the image quality of system.
2, as single photon counting detector, the present invention has single-photon sensitivity; Ultraviolet negative electrode has very low dark noise simultaneously.
3, the present invention has avoided metal anode directly to collect the image non-linear that electron cloud that microchannel plate produces causes, and the charge division noise that produces of charge division type position sensitive anode, has improved the spatial resolution of image.
4, the present invention has the ability of stronger anti-electromagnetic interference (EMI); Because position sensitive anode is positioned at the inside of sealed tube body, and be placed in and can be used as the top of earthy metal output window and there is identical current potential with it, therefore the Photon Counting detector that, the present invention is positioned at sealed tube body outside than position sensitive anode has the ability of stronger anti-electromagnetic interference (EMI).
5, detector bore of the present invention is only subject to the restriction of microchannel plate bore.Because the optimum thickness of induced charge position sensitive anode substrate is 1mm, the best substrate thickness that produces induced charge is 1mm, therefore, if position sensitive anode is positioned at sealed tube body outside, using thickness as 1mm substrate is as output window, owing to being subject to the restriction of 1mm substrate withstand external pressure, the effective aperture that position sensitive anode is positioned at the detector outside sealed tube body is less than 50mm, but the present invention is not limited, its effective aperture can reach 100mm, even larger.
6, in ultraviolet spherical microchannel board photon counting imaging detector of the present invention, position sensitive anode upper surface is prepared with resistive layer, and the square resistance scope of this resistive layer is between 1M Ω/～100M Ω/; When the metal position sensitive anode of preparing when the lower surface of position sensitive anode is delay line anode, the square resistance scope of resistive layer is good between 1M Ω/～10M Ω/, otherwise the square resistance of resistive layer too conference is led from the pulse width of metal position sensitive anode output and is broadened, and causes exporting counting rate and declines; When the metal position sensitive anode of preparing when the lower surface of position sensitive anode is spline shape anode, the square resistance scope of resistive layer is that good, too high square resistance also can cause exporting counting rate and declines between 80M Ω/～100M Ω/.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is structural representation of the present invention.
Reference numeral in figure is expressed as:
1-input window, 2-photocathode, 3-microchannel plate, 4-vaccum case, 5-position sensitive anode, 51-resistive layer, 52-metal position sensitive anode, 53-substrate, 6-metal output window, 7-position sensing circuit, 8-computer picture output circuit.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
As shown in Figure 1, a kind of ultraviolet spherical microchannel board photon counting imaging detector, it comprises: be placed in photocathode 2, microchannel plate 3, position sensitive anode 5 in vaccum case 4, be placed in vaccum case 4 front ends input window 1, be placed in the metal output window 6 with metal output electrode of vaccum case 4 rear ends and position sensing circuit 7 and computer picture output circuit 8.Described input window 1, be formed as one the structure of vacuum tight with vaccum case 4,6 sealing-ins of metal output window; Described photocathode 2, microchannel plate 3,5 vacuum seals of position sensitive anode are in having the vaccum case 4 of good vacuum-tightness; On the inside surface of described input window 1, be coated with the conductive film that one deck can be thrown ultraviolet ray and can conduct electricity; Described photocathode 2 is made on this conductive film.Described input window 1 and microchannel plate 3 are the protruding spherical shape that radius-of-curvature is identical;
Above-mentioned photocathode 2 is with the vacuum gap of microchannel plate 3 take 0.1mm～0.3mm as good, and the vacuum gap between described microchannel plate 3 and the resistive layer 51 of position sensitive anode 5 is take 1mm～3mm as good.
Above-mentioned microchannel plate 3 is for being operated in two or three microchannel plate structures of step-by-step counting pattern.
The sensitive anode in planimetric position that above-mentioned position sensitive anode 5 is induced charge mode, its upper surface is prepared resistive layer 51, and the square resistance scope of resistive layer 51 is between 1M Ω/～100M Ω/; Its lower surface is prepared metal position sensitive anode 52, take delay line anode, spline shape anode as good, for delay line anode, the square resistance scope of resistive layer 51 is good between 1M Ω/～10M Ω/, the square resistance of resistive layer 51 too conference is led the pulse width of exporting from metal position sensitive anode 52 and is broadened, and causes exporting counting rate and declines; Spline shape anode, the square resistance scope of resistive layer 51 is that good, too high square resistance also can cause exporting counting rate decline between 80M Ω/～100M Ω/.Material for the preparation of the substrate 53 of position sensitive anode is nonconducting nonmetal, for charge division anode, as spline shape anode, the relative dielectric constant of substrate take between 2～5 as good, and for delay line anode, the relative dielectric constant of substrate is to be greater than 10 as good, and for any type of position sensitive anode, substrate thickness is all take 1mm as good.
Above-mentioned vaccum case 4 adopts ceramic kovar alloy shell to be advisable.
The input window 1 of above-mentioned photocathode 2 is to adopt magnesium fluoride or calcium fluoride to be advisable; Described photocathode 2 adopts alkali halogen compound to be advisable.
Above-mentioned metal output window 6 is the kovar alloy part of having prepared metal electrode above and being applicable to vacuum seal, the metal electrode on it and metal output window electrical isolation, and metal output window 6 can be used as the ground of detector.
Principle of work of the present invention is referring to Fig. 1, the ultraviolet band photon that object produces sees through input window 1 and is imaged on photocathode 2 after optical imaging system, photocathode 2 converts the ultraviolet photon of incident to photoelectron, under the effect of 200V～300V voltage, photoelectron incides in the passage of microchannel plate 3, and electronics doubles therein.In microchannel, the photoelectron of an incident produces secondary electron under the effect of extra electric field, and secondary electron carries out the multiplication of avalanche type the output state that reaches capacity in passage, can reach from the electron cloud of passage outgoing to comprise～10
7electronics, incide the resistive layer 51 of position sensitive anode 5 upper surfaces from the electron cloud of microchannel plate 3 outgoing, on the metal position sensitive anode 52 of lower surface, induce charge pulse simultaneously, these charge pulses are transported to position sensing circuit 7 by the metal electrode on metal output window 6, position sensing circuit 7 is processed and is calculated the center-of-mass coordinate that incides the electron cloud on position sensitive anode 5 charge pulse of input, and this coordinate is the photon position of inciding on photocathode 2.The center-of-mass coordinate of the electron cloud that the photon of each incident produces is sent to computer picture output circuit 8 again, demonstrates the ultraviolet image that object produces on computer screen.
Photocathode input window 1 of the present invention can adopt the magnesium fluoride of high permeability or calcium fluoride in ultraviolet region, the thickness of input window 1 is advisable with 3mm～5mm, and magnesium fluoride or calcium fluoride seal with vaccum case 4 after being cold worked into protruding sphere, forms vacuum cavity.The inside surface of input window 1 is coated with the aluminium film that the uv-transmitting thickness of one deck is about 100nm, and photocathode 3 is prepared equably on the surface of aluminium film, and the material of photocathode 3 can select alkali halide as cesium telluride or tellurium rubidium etc.Photocathode 2 take 0.1mm～0.3mm as good, adds the positive voltage of 200V～300V with the vacuum gap of microchannel plate 3 when work.Microchannel plate 3, for being operated in two or three microchannel plate structures of step-by-step counting pattern, adds positive voltage in input, the output face of microchannel plate when work, and the size of voltage determines by the length-diameter ratio of microchannel plate 3, and every can add the voltage of 800V～1500V.Vacuum gap between microchannel plate 3 and position sensitive anode 5 is take 1mm～3mm as good.Position sensitive anode 5 is the sensitive anode in planimetric position of induced charge mode, and its upper surface is prepared resistive layer 51, and the square resistance scope of resistive layer 51 is between 1M Ω/～100M Ω/; Its lower surface is prepared metal position sensitive anode 52, take spline shape anode, delay line anode as good; The material of preparing the substrate 53 of position sensitive anode 5 is nonconducting nonmetal, for charge division anode, as spline shape anode, the relative dielectric constant of substrate take between 2～5 as good, and for delay line anode, the relative dielectric constant of substrate 53 is to be greater than 10 as good, and for any type of position sensitive anode, substrate 53 thickness are all take 1mm as good.
Obviously, above-described embodiment is only for example is clearly described, and the not restriction to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also giving exhaustive to all embodiments.And the apparent variation of being extended out thus or variation are still among the protection domain in the invention.
Claims (10)
1. a ultraviolet spherical microchannel board photon counting imaging detector, is characterized in that, comprising:
Be placed in vaccum case (4) photocathode (2), microchannel plate (3), the position sensitive anode (5) that arrange from top to bottom;
Be placed in the input window (1) of vaccum case (4) front end;
Be placed in the metal output window (6) with metal output electrode of vaccum case (4) rear end; And
Be placed in vaccum case (4) outside position sensing circuit (7) and computer picture output circuit (8);
Described input window (1), be formed as one the structure of vacuum tight with vaccum case (4), metal output window (6) sealing-in;
On the inside surface of described input window (1), be coated with the ultraviolet conductive film of one deck transmissive, described photocathode (2) is made on this conductive film;
Described input window (1) and microchannel plate (3) are the protruding spherical shape that radius-of-curvature is identical.
2. ultraviolet spherical microchannel board photon counting imaging detector according to claim 1, is characterized in that, described position sensitive anode (5) from top to bottom comprises: resistive layer (51), substrate (53) and metal position sensitive anode (52); The material of described substrate (53) is nonconducting nonmetal, and thickness is 1mm.
3. ultraviolet spherical microchannel board photon counting imaging detector according to claim 2, is characterized in that, described metal position sensitive anode (52) is delay line anode, and the square resistance scope of described resistive layer (51) is 1M Ω/～10M Ω/; The relative dielectric constant of described substrate (53) is for being greater than 10.
4. ultraviolet spherical microchannel board photon counting imaging detector according to claim 2, is characterized in that, described metal position sensitive anode (52) is spline shape anode; The square resistance scope of described resistive layer (51) is 80M Ω/～100M Ω/; The relative dielectric constant of described substrate (53) is 2～5.
5. ultraviolet spherical microchannel board photon counting imaging detector according to claim 1, is characterized in that, described photocathode (2) is 0.1mm～0.3mm with the vacuum gap of microchannel plate (3).
6. ultraviolet spherical microchannel board photon counting imaging detector according to claim 1, is characterized in that, the vacuum gap between described microchannel plate (3) and resistive layer (51) is 1mm～3mm.
7. ultraviolet spherical microchannel board photon counting imaging detector according to claim 1, is characterized in that, described microchannel plate (3) is for being operated in two or three microchannel plate structures of step-by-step counting pattern.
8. ultraviolet spherical microchannel board photon counting imaging detector according to claim 1, is characterized in that, described vaccum case (4) is ceramic kovar alloy shell.
9. ultraviolet spherical microchannel board photon counting imaging detector according to claim 1, is characterized in that, the material of described input window (1) is magnesium fluoride or calcium fluoride, and thickness is 3mm～5mm; The material of described photocathode (2) is alkali halogen compound; The conductive film being coated with on described input window (1) inside surface is the aluminium film that 100nm is thick.
10. ultraviolet spherical microchannel board photon counting imaging detector according to claim 1, it is characterized in that, described metal output window (6) is for being prepared with the kovar alloy part of metal electrode applicable vacuum seal, described metal electrode and described metal output window (6) electrical isolation, described metal output window (6) can be used as the ground of detector.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104317214A (en) * | 2014-09-26 | 2015-01-28 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet photon counting detector with position readout circuit |
| CN105424178A (en) * | 2015-11-06 | 2016-03-23 | 中国科学院长春光学精密机械与物理研究所 | Reflecting-type double-band low-light imaging instrument |
| CN108254349A (en) * | 2018-02-02 | 2018-07-06 | 中国科学院西安光学精密机械研究所 | Image enhanced all-optical solid ultrafast imaging detector |
| CN109273345A (en) * | 2016-04-04 | 2019-01-25 | 卢定华 | Non-contact object surface charge photomultiplier tube amplifier |
| CN109425436A (en) * | 2017-08-25 | 2019-03-05 | 中国科学院西安光学精密机械研究所 | Solar blind ultraviolet single photon imaging system and method |
| CN109540303A (en) * | 2018-11-09 | 2019-03-29 | 中国科学院长春光学精密机械与物理研究所 | A kind of two dimension ultraviolet photon counting imaging detector |
| CN109547718A (en) * | 2018-12-04 | 2019-03-29 | 北方夜视技术股份有限公司 | A kind of Miniaturization high-gain low-light (level) Image intensifier |
| CN109540302A (en) * | 2018-11-09 | 2019-03-29 | 中国科学院长春光学精密机械与物理研究所 | Based on the single photon 3-D imaging system for intersecting bar shaped anode detector |
| CN109916508A (en) * | 2017-12-13 | 2019-06-21 | 中国科学院大连化学物理研究所 | The online measuring device of vacuum-ultraviolet light cross direction profiles based on ion imaging |
| CN109916507A (en) * | 2017-12-13 | 2019-06-21 | 中国科学院大连化学物理研究所 | The online measuring device of vacuum-ultraviolet light cross direction profiles and method based on ion imaging |
| CN109916510A (en) * | 2017-12-13 | 2019-06-21 | 中国科学院大连化学物理研究所 | Based on the online measuring device of time of flight spectrum vacuum-ultraviolet light cross direction profiles and method |
| CN110361100A (en) * | 2019-06-25 | 2019-10-22 | 中国科学院长春光学精密机械与物理研究所 | A kind of photon counting imaging detector |
| CN113624336A (en) * | 2021-06-30 | 2021-11-09 | 北京空间机电研究所 | Multi-order curved surface micro-channel plate for earth plasma layer extreme ultraviolet light detection |
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| CN104317214A (en) * | 2014-09-26 | 2015-01-28 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet photon counting detector with position readout circuit |
| CN105424178A (en) * | 2015-11-06 | 2016-03-23 | 中国科学院长春光学精密机械与物理研究所 | Reflecting-type double-band low-light imaging instrument |
| CN109273345B (en) * | 2016-04-04 | 2020-09-11 | 乐清市风杰电子科技有限公司 | Non-contact object surface charge photomultiplier amplifier |
| CN109273345A (en) * | 2016-04-04 | 2019-01-25 | 卢定华 | Non-contact object surface charge photomultiplier tube amplifier |
| CN109425436A (en) * | 2017-08-25 | 2019-03-05 | 中国科学院西安光学精密机械研究所 | Solar blind ultraviolet single photon imaging system and method |
| CN109425436B (en) * | 2017-08-25 | 2024-05-31 | 中国科学院西安光学精密机械研究所 | Solar blind ultraviolet single photon imaging system and method |
| CN109916508A (en) * | 2017-12-13 | 2019-06-21 | 中国科学院大连化学物理研究所 | The online measuring device of vacuum-ultraviolet light cross direction profiles based on ion imaging |
| CN109916507A (en) * | 2017-12-13 | 2019-06-21 | 中国科学院大连化学物理研究所 | The online measuring device of vacuum-ultraviolet light cross direction profiles and method based on ion imaging |
| CN109916510A (en) * | 2017-12-13 | 2019-06-21 | 中国科学院大连化学物理研究所 | Based on the online measuring device of time of flight spectrum vacuum-ultraviolet light cross direction profiles and method |
| CN108254349B (en) * | 2018-02-02 | 2024-04-05 | 中国科学院西安光学精密机械研究所 | Image enhancement type all-optical solid ultrafast imaging detector |
| CN108254349A (en) * | 2018-02-02 | 2018-07-06 | 中国科学院西安光学精密机械研究所 | Image enhanced all-optical solid ultrafast imaging detector |
| CN109540303A (en) * | 2018-11-09 | 2019-03-29 | 中国科学院长春光学精密机械与物理研究所 | A kind of two dimension ultraviolet photon counting imaging detector |
| CN109540302A (en) * | 2018-11-09 | 2019-03-29 | 中国科学院长春光学精密机械与物理研究所 | Based on the single photon 3-D imaging system for intersecting bar shaped anode detector |
| CN109547718B (en) * | 2018-12-04 | 2020-11-27 | 北方夜视技术股份有限公司 | Miniaturized high-gain low-illumination night vision imaging device |
| CN109547718A (en) * | 2018-12-04 | 2019-03-29 | 北方夜视技术股份有限公司 | A kind of Miniaturization high-gain low-light (level) Image intensifier |
| CN110361100B (en) * | 2019-06-25 | 2020-10-13 | 中国科学院长春光学精密机械与物理研究所 | Photon counting imaging detector |
| CN110361100A (en) * | 2019-06-25 | 2019-10-22 | 中国科学院长春光学精密机械与物理研究所 | A kind of photon counting imaging detector |
| CN113624336A (en) * | 2021-06-30 | 2021-11-09 | 北京空间机电研究所 | Multi-order curved surface micro-channel plate for earth plasma layer extreme ultraviolet light detection |
| CN113624336B (en) * | 2021-06-30 | 2023-12-12 | 北京空间机电研究所 | Multi-order curved surface microchannel plate for extreme ultraviolet detection of earth plasma layer |
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Application publication date: 20140514 |