CN109273344B - Non-contact object surface charge photomultiplier amplifier - Google Patents
Non-contact object surface charge photomultiplier amplifier Download PDFInfo
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- CN109273344B CN109273344B CN201810950349.XA CN201810950349A CN109273344B CN 109273344 B CN109273344 B CN 109273344B CN 201810950349 A CN201810950349 A CN 201810950349A CN 109273344 B CN109273344 B CN 109273344B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/02—Tubes in which one or a few electrodes are secondary-electron emitting electrodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/24—Arrangements for measuring quantities of charge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/08—Cathode arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/10—Dynodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/20—Dynodes consisting of sheet material, e.g. plane, bent
Abstract
The invention relates to a non-contact object surface charge photomultiplier amplifier, belonging to the technical field of signal detection. The principle is that the intensity of incident light is determined by the number of photons passing through a unit vertical area in unit time, the number of photons passing through the surface of the metal in unit time is increased, the number of times of collision between the photons and electrons in the metal is increased, and therefore the number of photoelectrons escaping from the surface of the metal in unit time is increased, and the photocurrent is increased; similarly, if the incident light intensity is unchanged, the charge on the surface of the metal is increased, so that the number of times of collision between photons and electrons in the metal is increased, the number of photoelectrons escaping from the surface of the metal in unit time is increased, the number of the electrons is multiplied by a photomultiplier, the number of the electrons finally collected by the anode can be increased by 104-108 times, and weak charge signals on the surface of a sample can be detected due to the characteristics of high sensitivity and low noise of the photomultiplier, so that the method can be widely applied to the field of charge detection.
Description
Technical Field
The invention relates to a non-contact object surface charge photomultiplier amplifier, belonging to the technical field of signal detection.
Background
The main function of the charge amplifier is to change the charge amount into the corresponding output voltage, and the input impedance is required to be extremely high, and the output has a good integral relation to the input. The actual charge amplifier is also an operational amplifier, except that the charge amplifier is different from a common operational amplifier: the input end adopts Li-COMS technology, so that the bias current of the input is extremely small and is basically in the fA level. The input stage is relatively weak because there is no protection circuit such as ESD inside because of the input impedance problem of the charge amplifier. The bandwidth of the amplifier is narrow because of the low voltage and low leakage characteristics of the low leakage MOS tube, but the dynamic performance and transconductance of the MOS tube are not high. The circuit can meet the requirement of a practical low-bias operational amplifier, the piezoelectric plate is an electrostatic characteristic element, the output frequency calling characteristic is very good, and the output impedance has a certain relation with the frequency. However, the piezoelectric patch still has a certain output impedance, which is only very high, and the input impedance of the operational amplifier directly affects the sensitivity (impedance matching) of the piezoelectric patch. In a circuit of a charge amplifier, an operational amplifier is generally used. The charge amplifier generally detects the amount of charge, and requires an integration effect of the charge, for example, when the piezoelectric sensor is under pressure, the charge is generated, and the amount of charge varies with the pressure. The detection of such charges, the amount of charge and the operational amplifier are in contact with each other. The detection is carried out by the surface charge quantity of an object, the higher the charge density of the surface of the detected object is, the higher the voltage is, and the form of the surface charge density of the object cannot be damaged in the detection process, the special requirements make the sensor and the surface of the object not be contacted in the detection process, so a non-contact sensor is needed, the voltage generated by the charge quantity of the surface of the object is very weak, and meanwhile, the non-contact requirement is met.
Disclosure of Invention
The invention aims to provide a non-contact object surface charge photomultiplier amplifier.
The technical scheme of the invention is as follows: a non-contact object surface charge photomultiplier amplifier is composed of a charge detection photocathode, a light input system, a dynode, an anode, a power supply system and an electron multiplication system signal output end; the front end of a non-contact object surface charge photomultiplier amplifier is a charge detection photocathode, the sectional area S of the front end face of the charge detection photocathode is provided, the surface charge density of a detected object is ne/delta S, delta S is the detected area, ne is the charge quantity on delta S, S is larger than delta S, S = delta S105% -120%, and the induction distance is 0.001-1 mm; the rear end face of a charge detection photocathode is arc-shaped, a constant-intensity light beam of a constant light input system irradiates the central area of the arc-shaped surface through a glass window, the light irradiation cathode generates a photoelectric effect to emit primary electrons, a dynode D is made of a photoelectric emission material metal, the electrons from the photocathode to each dynode D1, D2.. Dn, n is a positive integer larger than or equal to 6, and then reach an anode, voltages applied by a power supply system at D1 and D2.. Dn are increased in sequence, the electrons generated on each photocathode are accelerated under the action of an electric field, focused through an arc surface, sequentially bombard D1 and D2.. Dn to generate more electrons, reach the anode after passing through 6 or more dynodes, the multiplied photoelectrons are collected by the anode to output a photocurrent, and a signal voltage A is generated on a load to form a signal output end of the electron multiplication system.
The inside of the non-contact object surface charge photomultiplier is vacuumized, the whole charge detection photocathode is made of metal, and the rear end face of the charge detection photocathode is coated with a photoelectric emission metal material.
The light beam of the constant light input system is a constant intensity light beam during working, the frequency of the light source is a fixed frequency, and the illumination intensity can be adjusted according to the intensity of the detected charges.
And a filter device is arranged at the signal output end of the electron multiplying system.
The working principle is as follows: when the intensity of the incident light is increased, according to the photon hypothesis, the intensity of the incident light (i.e. the light energy passing through a unit vertical area in a unit time) is determined by the number of photons passing through the unit vertical area in the unit time, and the number of photons passing through the metal surface in the unit time is increased, so that the number of times of the photons colliding with electrons in the metal is increased, and consequently, the number of photoelectrons escaping from the metal surface in the unit time is increased, and the current is increased; similarly, if the incident light intensity is not changed, the charge on the surface of the metal increases, so that the number of times of photon collisions with electrons in the metal also increases, and consequently the number of photoelectrons escaping from the surface of the metal per unit time also increases, and the current also increases. Electrons illuminated by a beam absorb the energy of photons, but the mechanism follows a non-all-or-nothing criterion, and all the energy of photons must be absorbed to overcome the work function, otherwise the energy is released. If the energy absorbed by the electrons is able to overcome the work function and there is also residual energy, this residual energy will become kinetic energy of the electrons after they have been emitted.
The work function W is the minimum energy required to emit a photoelectron from a metal surface. If the frequency of the photons is shifted from the point of view of the frequency, the frequency of the photons must be greater than the limit frequency of the metal features in order to give sufficient energy to the electrons to overcome the escapeAnd (4) working. The relationship between the work function and the limit frequency v0 is: w = h v0, where h is the planck constant, the energy of a photon at a light frequency h v 0. After overcoming the work function, the maximum kinetic energy K of the photoelectronsmaxIs Kmax= hv-W = h (v-v 0) where hv is the energy carried by a photon of light frequency v and absorbed by an electron.
The kinetic energy is actually required to be positive, and therefore, the light frequency must be greater than or equal to the limit frequency, and the photoelectric effect can occur. In order to avoid generating excessive photocurrent and cover up the actual charge signal, the frequency of the light used in the invention is slightly larger than the limit frequency, the illumination intensity of the light is reduced as much as possible, and repeated comparison experiments are needed to determine the intensity of the illumination, so that the photoelectric effect can represent the density of the surface charge of the measured object.
The invention adopts a dynode type photomultiplier: the dynode type photomultiplier consists of photocathode, dynode and anode, and is sealed with glass and has high vacuum inside, and the dynode consists of one series of dynodes, each of which operates at higher voltage of the previous stage. Photons impact a photocathode material, so that photoelectrons are generated after the work function of the photocathode is overcome, the photons are accelerated and focused by an electric field, the electrons with higher energy impact a first-stage multiplier tube to emit more electrons with low energy, the electrons are accelerated to impact a lower-stage multiplier in sequence to cause a series of geometric multiplication, finally the electrons reach an anode, and sharp current pulses formed by charge accumulation can represent the input photons.
In the testing process, the charge detection photocathode (4) is made of metal, when the charge detection photocathode (4) is close to the surface of a tested object (1), the surface of the tested object has test charges (2), the front end of the charge detection photocathode (4) can generate induced charges (3) which are positive charges, the induced charges generated at the rear end of the charge detection photocathode (4) are negative charges, light rays of the light input system (5) irradiate the rear end face of the charge detection photocathode (4) to generate an external photoelectric effect, and the photocathode excites photoelectrons into vacuum. These photoelectrons enter the multiplication system in a focused electric field and are amplified by further multiplication by secondary emission. Then amplifying the electronsCollected with the anode as the signal output. The photoelectron emitted by secondary electron is multiplied to obtain sensitivity far higher than that of photoelectric tube, so that weak optical signal can be measured. The photomultiplier comprises two parts, a cathode chamber and a secondary emission multiplication system consisting of a plurality of dynodes (6) (see the figure). The cathode chamber is constructed in relation to the size and shape of the photocathode K and functions to focus electrons generated by the external photoelectric effect of the cathode under illumination on the surface of the first dynode D1, which is smaller in area than the photocathode. The secondary emission multiplication system is the most complex part. The dynodes are made primarily of materials that have high sensitivity and secondary emission coefficients at low incident electron energies. The commonly used dynode materials include cesium antimonide, oxidized silver magnesium alloy, oxidized copper beryllium alloy and the like. The dynode should be shaped to facilitate collection of electrons emitted from a previous stage to a next stage. A gradually increasing positive voltage is applied to each dynode (6) D1, D2, D3 … and the anode A in sequence, and the voltage difference between the two adjacent dynodes is such that the secondary emission coefficient is greater than 1. Thus, the electrons emitted from the photocathode are emitted toward the dynode D1 at a high speed by the electric field D1, more secondary emitted electrons are generated, and these electrons fly toward the dynode D2 by the electric field D2. Continuing this way, each photoelectron will excite a multiplied secondary emission electron, which is finally collected by the anode. These electrons striking the secondary pole can cause the secondary pole to release more electrons, which are again focused at the second secondary pole. Thus, the amplification factor can reach 10 after more than ten times of multiplication8～1010. Finally, the amplified photocurrent is collected at the high potential anode. The output current is proportional to the number of incident photons. The total process time is about 10-8The photomultiplier has two disadvantages that the ① sensitivity is reduced due to strong light irradiation or over long irradiation time, and the sensitivity is partially recovered after the irradiation is stopped, which is called as fatigue, and that the ② photo-cathode surface sensitivity of each point is not uniform.
Operating characteristics
1. Stability of
The stability of the photomultiplier is determined by various factors such as the characteristics of the device itself, the operating conditions, and the environmental conditions. The output of the pipe is unstable in the working process, and the conditions are as follows:
a. the jumping instability phenomenon caused by poor welding of the electrode in the tube, loose structure, poor contact of the cathode elastic sheet, discharge of the tip of the electrode between the electrodes, flashover and the like has a large and small signal.
b. The instability of continuity and fatigue caused by too large output current of the anode.
c. The effect of environmental conditions on stability. The ambient temperature increases and the sensitivity of the tube decreases.
d. The humid environment causes leakage between the pins, causing increased and unstable dark current.
e. The environmental electromagnetic field interference causes unstable operation.
2. The limit operating voltage refers to the upper limit of the voltage that the tube is allowed to apply. Above this voltage, the tube discharges and even breaks down.
Advantageous effects
The invention relates to a photo-sensitive electro-vacuum device which is based on the external photoelectric effect, secondary electron emission and electron optics theory, combines the characteristics of high gain, low noise, high frequency response, large signal receiving area and the like, has extremely high sensitivity and ultrafast time response, and can work in the spectral regions of ultraviolet, visible and near infrared regions. The method has the characteristics of low noise (dark current is less than 1 nA), quick response, large receiving area and the like, and has good development potential.
Drawings
FIG. 1 is a schematic cross-sectional front view of the present invention.
The reference numbers in the figures are: 1. an object to be measured; 2. testing the charge; 3. inducing charge; 4. a charge detecting photocathode; 5. a light input system; 6. a dynode; 7. an anode; 8. a power supply system; 9. and (4) outputting the electron multiplication system signal.
Detailed Description
Example 1: the technical scheme of the invention is as follows: the device comprises a charge detection photocathode 4, a light input system 5, a dynode 6, an anode 7, a power supply system 8 and an electron multiplication system signal output end 9; the front end of a non-contact object surface charge photomultiplier amplifier is a charge detection photocathode 4, the sectional area S of the front end face of the charge detection photocathode 4 is provided, the surface charge density of an object to be detected 1 is ne/delta S, delta S is the area to be detected, ne is the charge quantity on delta S, S is larger than delta S, S = delta S105% -120%, and the induction distance is 0.001-1 mm; the back end face of the charge detection photocathode 4 is arc-shaped, a constant intensity light beam of a constant light input system 5 irradiates the central area of the arc-shaped surface through a glass window, the light irradiation cathode generates a photoelectric effect to emit primary electrons, the dynode 6D is made of a photoelectric emission material metal and extends from the photocathode K to each dynode D1 and D2., then the dynode D reaches the anode 7, the voltage applied by the power supply system 8 is increased gradually, each electron generated on the photocathode K is accelerated under the action of an electric field and focused through the arc surface, the second dynode D2 generates more secondary electrons, the secondary electrons reach the last dynode, namely the anode 7 after passing through 6 or more dynodes, the multiplied photoelectrons are collected by the anode 7 to output photocurrent, and a signal voltage A is generated on a load, so that a signal output end 9 of the electron multiplication system is formed.
The inside of the non-contact object surface charge photomultiplier is vacuumized, the whole charge detection photocathode 4 is made of metal, and the rear end face of the charge detection photocathode 4 is coated with a film by adopting a photoemission metal material.
The light beam of the constant light input system 5 is a constant intensity light beam during working, the frequency of the light source is a fixed frequency, and the illumination intensity can be adjusted according to the intensity of the detected charges; and a filter device is arranged at the signal output end 9 of the electron multiplying system.
Because the photomultiplier gain is high and the response time is short, and because its output current is proportional to the incident photon and the cathode surface electron number, its advantage is: the measurement accuracy is high, and the rapid change of the charge can be measured. Optionally, a multiplier tube of antimony-cesium photocathode, such as RCA1P21, may be used. The photomultiplier tube has a very large quantum efficiency of about 20% at about 4200 angstroms. There is also a double base photocathode photomultiplier, such as GDB-53. The signal-to-noise ratio is an order of magnitude larger than that of RCA1P21, and the dark current is very low.
The ordinary photomultiplier can only measure one piece of information at a time, i.e., the number of channels is 1. Only hundreds of channels are available, since the number of channels is limited by the thin wire at the end of the anode, but this is sufficient for detection of weak charge changes.
The present invention has been described in detail with reference to the specific embodiments, but these should not be construed as limitations of the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (1)
1. A kind of non-contact object surface charge photomultiplier amplifier, characterized by that: the device comprises a charge detection photocathode (4), a light input system (5), a dynode (6), an anode (7), a power supply system (8) and an electron multiplication system signal output end (9); the front end of the amplifier of the non-contact object surface charge photomultiplier is a charge detection photocathode (4), the sectional area S of the front end surface of the charge detection photocathode (4), the surface charge density of the object to be measured (1) is ne/delta S, delta S is the area to be measured, ne is the charge quantity on delta S, S is larger than delta S, S = delta S105% -120%, and the induction distance between the charge detection photocathode (4) and the object to be measured (1) is 0.001-1 mm; the rear end face of the charge detection photocathode (4) is arc-shaped, a constant-intensity light beam of a light input system (5) irradiates the central area of the arc-shaped surface through a glass window, the light irradiates the charge detection photocathode (4) to generate a photoelectric effect to emit primary electrons, a dynode (6) D is made of a photoelectric emission material metal, the electrons are sequentially increased in voltage from the charge detection photocathode (4) to each dynode D1, D2.. Dn, n is a positive integer which is not less than 6 and then to an anode (7), the voltage applied by a power supply system (8) to the dynodes D1 and D2.. Dn is sequentially increased, the electrons generated on the charge detection photocathode (4) are accelerated under the action of an electric field, are focused through an arc surface, sequentially bombard the D1 and D2.. Dn, more electrons are generated and reach the anode (7) after passing through the 6 or more dynodes, and the multiplied photoelectrons are collected by the anode (7) to be output, generating a signal voltage A on a load to form a signal output end (9) of the electron multiplying system;
vacuumizing the inside of a charge photomultiplier on the surface of a non-contact object, wherein the whole charge detection photocathode (4) is made of metal, and the rear end surface of the charge detection photocathode (4) is coated with a photoemission metal material; a filter device is arranged at the signal output end (9) of the electron multiplication system; the dynode (6) is made of cesium antimonide.
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| CN201810950349.XA CN109273344B (en) | 2016-04-04 | 2016-04-04 | Non-contact object surface charge photomultiplier amplifier |
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| CN201810950349.XA CN109273344B (en) | 2016-04-04 | 2016-04-04 | Non-contact object surface charge photomultiplier amplifier |
| CN201610199752.4A CN105789016B (en) | 2016-04-04 | 2016-04-04 | A kind of non-contact object surface charge photomultiplier amplifier |
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| CN201610199752.4A Active CN105789016B (en) | 2016-04-04 | 2016-04-04 | A kind of non-contact object surface charge photomultiplier amplifier |
| CN201810950381.8A Active CN109273345B (en) | 2016-04-04 | 2016-04-04 | Non-contact object surface charge photomultiplier amplifier |
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| CN110927472B (en) * | 2019-11-04 | 2021-08-03 | 华中科技大学 | Independent-measurement isolated conductor charge control method |
| CN111427403B (en) * | 2020-04-01 | 2021-11-19 | 华中科技大学 | Potential control method and device of isolated conductor based on optical power compensation |
| CN111751632B (en) * | 2020-07-22 | 2023-03-14 | 北京卫星环境工程研究所 | Space environment weak charge measuring system |
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| JPH06102248A (en) * | 1992-09-21 | 1994-04-15 | Yokogawa Electric Corp | Induction coupling plasma mass spectroscope |
| CN104022009A (en) * | 2014-06-16 | 2014-09-03 | 中国科学院高能物理研究所 | Photomultiplier system and photomultiplier fast signal reading method |
| CN104749415A (en) * | 2015-03-09 | 2015-07-01 | 中国船舶重工集团公司第七一九研究所 | Electron multiplier based detector |
| CN206022306U (en) * | 2016-04-04 | 2017-03-15 | 陈蜀乔 | A kind of non-contact object surface charge photomultiplier tube amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7718977B2 (en) * | 2006-05-05 | 2010-05-18 | Virgin Island Microsystems, Inc. | Stray charged particle removal device |
| GB2475063A (en) * | 2009-11-04 | 2011-05-11 | Univ Leicester | Charge detector for photons or particles. |
| US9024246B2 (en) * | 2011-12-19 | 2015-05-05 | Princeton Lightwave, Inc. | Two-state negative feedback avalanche diode having a control element for determining load state |
| CN203150516U (en) * | 2013-03-25 | 2013-08-21 | 南京中纽科技有限公司 | A photoelectric signal converting and processing device |
| CN103792004A (en) * | 2014-01-22 | 2014-05-14 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet spherical micro-channel plate photo counting and imaging detector |
| CN204905211U (en) * | 2015-06-03 | 2015-12-23 | 陈灵燕 | Light electric signal transition device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06102248A (en) * | 1992-09-21 | 1994-04-15 | Yokogawa Electric Corp | Induction coupling plasma mass spectroscope |
| CN104022009A (en) * | 2014-06-16 | 2014-09-03 | 中国科学院高能物理研究所 | Photomultiplier system and photomultiplier fast signal reading method |
| CN104749415A (en) * | 2015-03-09 | 2015-07-01 | 中国船舶重工集团公司第七一九研究所 | Electron multiplier based detector |
| CN206022306U (en) * | 2016-04-04 | 2017-03-15 | 陈蜀乔 | A kind of non-contact object surface charge photomultiplier tube amplifier |
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| Publication number | Publication date |
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| CN109273345B (en) | 2020-09-11 |
| CN109273345A (en) | 2019-01-25 |
| CN105789016B (en) | 2018-09-28 |
| CN105789016A (en) | 2016-07-20 |
| CN109273344A (en) | 2019-01-25 |
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