CN109256487A - 一种显示面板 - Google Patents
一种显示面板 Download PDFInfo
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- CN109256487A CN109256487A CN201811062627.4A CN201811062627A CN109256487A CN 109256487 A CN109256487 A CN 109256487A CN 201811062627 A CN201811062627 A CN 201811062627A CN 109256487 A CN109256487 A CN 109256487A
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- 238000005538 encapsulation Methods 0.000 claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010408 film Substances 0.000 claims description 35
- 238000000059 patterning Methods 0.000 claims description 3
- 230000003447 ipsilateral effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 147
- 238000000034 method Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 9
- 238000009413 insulation Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
本申请提供一种显示面板,包括:柔性衬底,包括显示区域与所述显示区域外围的非显示区域;薄膜晶体管层,制备于所述柔性衬底上;所述薄膜晶体管层对应所述非显示区域的位置形成有围绕所述显示区域的凹槽;平坦层,设置于所述薄膜晶体管层上;像素定义层,设置于所述平坦层上,且定义出像素区域;所述平坦层和所述像素定义层在所述非显示区域的部分经图案化后形成凸块,且所述凸块位于相邻两所述凹槽之间;发光层,对应所述像素区域制备于所述平坦层上;薄膜封装层,制备于所述发光层上并用于包裹所述发光层;其中,所述薄膜封装层在所述非显示区域覆盖所述凸块和所述凹槽。
Description
技术领域
本申请涉及显示屏技术领域,尤其涉及一种显示面板。
背景技术
鉴于OLED发光器件对于水氧的敏感性,在发光层工艺完成以后需要对其进行薄膜封装,以大幅度减弱来自于外界水氧对器件的侵蚀,增加器件寿命。
OLED器件的封装(Thin Film Encapsulation)是在发光层工艺完成后进行的,如图1所示,薄膜封装层10覆盖整个显示区11的同时将外围的GOA电路12也一起封装在内;由于PECVD成ILD膜13时,对膜质要求较高,成膜温度高达350℃以上,通过调整工艺条件不断改善膜与膜之间的应力可以达到良好的膜层之间的匹配度,不会出现同一个位置应力差异过大造成膜层起皮脱落的现象,然而在薄膜封装时,由于发光材料对温度非常敏感,所以在封装时只能在低温下进行,大概80至100℃左右,在此工艺条件下薄膜封装层10的膜质与TFT基板的ILD膜13层不同,所以应力也难以一致,一旦应力差距过大,极易造成起皮脱落,就难以实现封装效果。对于玻璃衬底上的显示面板(panel)来说,最容易起皮脱落的是分布在玻璃衬底四周的边缘部分。
因此,有必要提供一种显示面板,以解决现有技术所存在的问题。
发明内容
本申请提供一种显示面板,能够改善薄膜封装层与下层的显示面板膜层脱落的风险。
为解决上述问题,本申请提供的技术方案如下:
本申请提供一种显示面板,包括:
柔性衬底,所述柔性衬底包括显示区域与所述显示区域外围的非显示区域;
薄膜晶体管层,制备于所述柔性衬底上;
所述薄膜晶体管层对应所述非显示区域的位置形成有围绕所述显示区域的凹槽;
平坦层,设置于所述薄膜晶体管层上;
像素定义层,设置于所述平坦层上,且定义出像素区域;
所述平坦层和所述像素定义层在所述非显示区域的部分经图案化后形成凸块,且所述凸块位于相邻两所述凹槽之间;
发光层,对应所述像素区域制备于所述平坦层上;
薄膜封装层,制备于所述发光层上并用于包裹所述发光层;
其中,所述薄膜封装层在所述非显示区域覆盖所述凸块和所述凹槽。
在本申请的显示面板中,所述凸块和所述凹槽对应所述非显示区域的所述薄膜晶体管层呈分段间隔设置。
在本申请的显示面板中,所述凸块或所述凹槽由对应所述发光层的边缘向位于同侧的所述薄膜封装层的边缘间隔分布。
在本申请的显示面板中,由所述薄膜晶体管层至所述柔性衬底表面的膜层上分布有多个不同深度的所述凹槽。
在本申请的显示面板中,对应所述非显示区域的所述薄膜封装层的截面形状与所述凸块或所述凹槽的形状相匹配。
在本申请的显示面板中,所述凹槽的截面形状为梯形或阶梯状。
在本申请的显示面板中,所述凸块包括所述平坦层图案化后形成的第一凸块,所述第一凸块对应位于相邻两所述凹槽之间。
在本申请的显示面板中,所述像素定义层图案化后形成的图案叠加至部分所述第一凸块上,形成第二凸块,所述第二凸块位于相邻两所述凹槽之间。
在本申请的显示面板中,所述像素定义层上还制备有一层有机间隔层,图案化后在所述非显示区域形成的图案叠加至部分所述第二凸块上形成第三凸块,所述第三凸块位于相邻两所述凹槽之间。
在本申请的显示面板中,所述凸块的截面形状为梯形或阶梯状。
本申请的有益效果为:本申请提供的显示面板,在该显示面板的阵列基板的制备过程中,通过在不同膜层光刻工艺的同时,在非显示区域围绕显示区域的四周形成凹槽或凸块,在薄膜封装制程中使得薄膜封装层在非显示区域的部分覆盖该凹槽或凸块,从而使得薄膜封装层与其下层的其他膜层相互嵌合设置,进而使薄膜封装层与下层膜层紧密贴合,不易脱落;同时薄膜封装层中的无机层可以通过凹槽与下层膜层中的无机膜层接触,使得薄膜封装层的密封效果更好,另外这样的设计增大了薄膜封装层与其下层的膜层的接触面积,可以进一步增加粘附性,使得膜层不易脱落。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为现有技术的显示面板封装示意图;
图2为本申请实施例一提供的一种显示面板局部结构示意图;
图3为本申请实施例二提供的一种显示面板结构示意图;
图4为本申请实施例二提供的显示面板局部结构示意图;
图5为本申请实施例提供的显示面板俯视图。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
本申请针对现有技术的显示面板,由于封装时只能在低温下进行,因此导致薄膜封装层的膜质与之接触的ILD膜层不同,极易造成薄膜封装层起皮脱落的技术问题,本实施例能够解决该缺陷。
参阅图2,为本申请实施例一提供的一种显示面板局部结构示意图,包括:柔性衬底20,所述柔性衬底20包括显示区域与所述显示区域外围的非显示区域;缓冲层21,制备于所述柔性衬底20上;薄膜晶体管层22,制备于所述缓冲层21上;所述薄膜晶体管层22对应所述非显示区域的位置形成有围绕所述显示区域的凹槽(详见图3所示);平坦层23,设置于所述薄膜晶体管层22上;阳极层24,制备于所述平坦层23上;像素定义层25,设置于所述平坦层23上,且对应所述阳极层24的位置定义出像素区域;间隔垫26,围绕所述像素区域形成于所述像素定义层25上,所述间隔垫26作为支撑可用于在所述像素区域内蒸镀发光层(图示未标出);薄膜封装层,制备于所述发光层上并用于包裹所述发光层。在所述非显示区域的绑定区域等特定的弯折区域,通常设置有挖槽,用于填充有机材料,以改善相应区域显示面板的柔性。比如包括第一挖槽28与第二挖槽27,所述第一挖槽28与所述第二挖槽27可以位于同一位置,所述第一挖槽28与所述第二挖槽27可以贯穿所述薄膜晶体管层22以及所述缓冲层21。本申请的所述显示面板可以在所述第一挖槽28与所述第二挖槽27以及所述薄膜晶体管层22的源漏极过孔220形成的同时,在所述非显示区域围绕所述显示区域的四周分别形成相应的凹槽,所述薄膜封装层的边缘延伸至所述凹槽处,使得所述薄膜封装层在所述非显示区域覆盖所述凸块和所述凹槽。
参阅图3,为本申请实施例二提供的一种显示面板结构示意图,本实施例与上述实施例一的区别在于:本实施例在所述薄膜晶体管层上形成与凹槽36交错设置的凸块37,所述凸块37是上述实施例一中的所述平坦层、所述像素定义层以及用于形成所述间隔垫的有机间隔层在图案化制程时一道形成的,且所述凸块37位于相邻两所述凹槽36之间。
具体地,所述凹槽36包括第一凹槽360、第二凹槽362以及第三凹槽361;所述第一凹槽360是通过与所述第一挖槽以及所述第二挖槽实施一道制程叠加形成的,所述第一凹槽360依次贯穿间绝缘层33、第二栅绝缘层32、第一栅绝缘层31以及缓冲层30。所述第二凹槽362是通过与所述第二挖槽实施一道制程形成的,所述第二凹槽362贯穿所述间绝缘层33;所述第三凹槽361是通过与所述源漏极过孔实施一道制程形成的,所述第三凹槽361依次贯穿所述间绝缘层33、所述第二栅绝缘层32以及所述第一栅绝缘层31。所述第一凹槽360、所述第二凹槽362以及所述第三凹槽361可从发光层34的边界向所述显示面板四周依次间隔设置,具体本申请对所述第一凹槽360、所述第二凹槽362以及所述第三凹槽361的排列顺序不做限制。
所述凸块37包括:与所述平坦层图案化实施同一道制程形成的第一凸块372,所述第一凸块372位于相邻两所述凹槽36之间;所述像素定义层图案化后形成的图案叠加至部分所述第一凸块372上形成第二凸块371,所述第二凸块371位于相邻两所述凹槽36之间;所述像素定义层上还制备有一层所述有机间隔层,所述有机间隔层图案化后在所述非显示区域形成的图案叠加至部分所述第二凸块371上形成第三凸块370,所述第三凸块370位于相邻两所述凹槽36之间。所述有机间隔层图案化后同时在所述显示区域形成所述间隔垫。其中,所述凸块37的截面形状为梯形或阶梯状等,此处不做限制。
所述凸块37与所述凹槽36间隔的分布于所述非显示区域的四周。薄膜封装层35制备于所述发光层34上,且所述薄膜封装层35对应所述非显示区域的部分覆盖所述凸块37和所述凹槽36。
参阅图4,为本申请实施例二提供的显示面板局部结构示意图,对应所述非显示区域的薄膜封装层40与其下层的显示面板的其他膜层相互嵌合设置,所述薄膜封装层40包括多层层叠设置的无机层与有机层,图示仅为第一无机层401、第一有机层402、第二无机层403;所述显示面板在发光层41的外围设置有多个凹槽42以及凸块43,对应所述非显示区域的所述薄膜封装层40的截面形状与所述凸块43和所述凹槽42的形状相匹配。其中,所述第一无机层401分别通过所述第一凹槽、所述第二凹槽、所述第三凹槽与下层的无机材料膜层接触,从而进一步加强所述薄膜封装层40的封装性能;所述第一无机层401对应相邻两所述凹槽42之间的部分形成在所述平坦层、所述像素定义层、所述有机间隔层图案化后形成的所述凸块43上;其中,所述凹槽42与所述凸块43的形成以及位置关系请参考上述对图3的描述,此处不再赘述。
当然,在其他实施例中,所述凹槽42也可以是部分贯穿所述间绝缘层44,或部分贯穿所述第二栅绝缘层45,或部分贯穿所述第一栅绝缘层46,或者部分贯穿所述缓冲层47;所述凸块43可以是所述平坦层、所述像素定义层、所述有机间隔层叠加后形成的不同高度的图案,也可以是分别由不同膜厚的所述平坦层、所述像素定义层、所述有机间隔层图案化后形成的,此处不做限定。
参阅图5,为本申请实施例提供的显示面板俯视图,薄膜封装层50包裹显示区域的发光层52,与所述薄膜封装层50四周边缘接触的薄膜晶体管层上设置有凹槽/凸块51,所述凹槽/所述凸块51由对应所述发光层52的边缘一侧向对应所述薄膜封装层50的边缘一侧间隔分布。其中,所述凹槽/所述凸块51可以连续围绕所述发光层52一圈,也可以分段间隔设置,亦或者分段错位设置;优选的,对应所述薄膜晶体管层四周角落的所述凹槽/所述凸块51与所述薄膜晶体管层四边的所述凹槽/所述凸块51分段间隔设置,这样可以缓解显示面板四个边角区域的应力。
本申请提供的显示面板,在该显示面板的阵列基板的制备过程中,通过在不同膜层光刻工艺的同时,在非显示区域围绕显示区域的四周形成凹槽或凸块,在薄膜封装制程中使得薄膜封装层在非显示区域的部分覆盖该凹槽或凸块,从而使得薄膜封装层与其下层的其他膜层相互嵌合设置,进而使薄膜封装层与下层膜层紧密贴合,不易脱落;同时薄膜封装层中的无机层可以通过凹槽与下层膜层中的无机膜层接触,使得薄膜封装层的密封效果更好,另外这样的设计增大了薄膜封装层与其下层的膜层的接触面积,可以进一步增加粘附性,使得膜层不易脱落。
综上所述,虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种显示面板,其特征在于,包括:
柔性衬底,所述柔性衬底包括显示区域与所述显示区域外围的非显示区域;
薄膜晶体管层,制备于所述柔性衬底上;
所述薄膜晶体管层对应所述非显示区域的位置形成有围绕所述显示区域的凹槽;
平坦层,设置于所述薄膜晶体管层上;
像素定义层,设置于所述平坦层上,且定义出像素区域;
所述平坦层和所述像素定义层在所述非显示区域的部分经图案化后形成凸块,且所述凸块位于相邻两所述凹槽之间;
发光层,对应所述像素区域制备于所述平坦层上;
薄膜封装层,制备于所述发光层上并用于包裹所述发光层;
其中,所述薄膜封装层在所述非显示区域覆盖所述凸块和所述凹槽。
2.根据权利要求1所述的显示面板,其特征在于,所述凸块和所述凹槽对应所述非显示区域的所述薄膜晶体管层呈分段间隔设置。
3.根据权利要求1所述的显示面板,其特征在于,所述凸块或所述凹槽由对应所述发光层的边缘向位于同侧的所述薄膜封装层的边缘间隔分布。
4.根据权利要求1所述的显示面板,其特征在于,由所述薄膜晶体管层至所述柔性衬底表面的膜层上分布有多个不同深度的所述凹槽。
5.根据权利要求1所述的显示面板,其特征在于,对应所述非显示区域的所述薄膜封装层的截面形状与所述凸块或所述凹槽的形状相匹配。
6.根据权利要求1所述的显示面板,其特征在于,所述凹槽的截面形状为梯形或阶梯状。
7.根据权利要求1所述的显示面板,其特征在于,所述凸块包括所述平坦层图案化后形成的第一凸块,所述第一凸块对应位于相邻两所述凹槽之间。
8.根据权利要求7所述的显示面板,其特征在于,所述像素定义层图案化后形成的图案叠加至部分所述第一凸块上,形成第二凸块,所述第二凸块位于相邻两所述凹槽之间。
9.根据权利要求8所述的显示面板,其特征在于,所述像素定义层上还制备有一层有机间隔层,图案化后在所述非显示区域形成的图案叠加至部分所述第二凸块上形成第三凸块,所述第三凸块位于相邻两所述凹槽之间。
10.根据权利要求1所述的显示面板,其特征在于,所述凸块的截面形状为梯形或阶梯状。
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110190104A (zh) * | 2019-06-03 | 2019-08-30 | 武汉天马微电子有限公司 | 一种显示面板及其制造方法 |
CN110335962A (zh) * | 2019-06-20 | 2019-10-15 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板 |
CN110491929A (zh) * | 2019-09-05 | 2019-11-22 | 京东方科技集团股份有限公司 | 显示基板、制备方法及显示装置 |
CN110491910A (zh) * | 2019-07-30 | 2019-11-22 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板及其制备方法、显示装置 |
CN110854289A (zh) * | 2019-10-29 | 2020-02-28 | 深圳市华星光电半导体显示技术有限公司 | 一种oled显示面板及显示装置 |
WO2020087868A1 (en) * | 2018-11-01 | 2020-05-07 | Boe Technology Group Co., Ltd. | Display panel, display device, and manufacturing methods thereof |
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WO2022262081A1 (zh) * | 2021-06-17 | 2022-12-22 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
US20230098291A1 (en) * | 2020-07-07 | 2023-03-30 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display device, display panel, and manufacturing method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111129034A (zh) * | 2019-12-20 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106057853A (zh) * | 2015-04-16 | 2016-10-26 | 三星显示有限公司 | 有机发光二极管显示器 |
CN106098724A (zh) * | 2015-04-27 | 2016-11-09 | 三星显示有限公司 | 显示装置 |
CN106409869A (zh) * | 2015-07-29 | 2017-02-15 | 三星显示有限公司 | 有机发光二极管显示器 |
CN106711171A (zh) * | 2015-11-17 | 2017-05-24 | 三星显示有限公司 | 显示装置和制造显示装置的方法 |
WO2017113256A1 (zh) * | 2015-12-30 | 2017-07-06 | 深圳市柔宇科技有限公司 | 柔性显示屏及柔性显示屏制作方法 |
CN207637803U (zh) * | 2017-12-26 | 2018-07-20 | 上海和辉光电有限公司 | 一种显示面板及显示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102414110B1 (ko) * | 2015-09-07 | 2022-06-29 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
CN108281458B (zh) * | 2017-01-03 | 2020-09-22 | 昆山工研院新型平板显示技术中心有限公司 | 柔性oled显示装置及其制备方法 |
CN207381403U (zh) * | 2017-08-31 | 2018-05-18 | 京东方科技集团股份有限公司 | 显示基板、显示面板 |
CN207116481U (zh) * | 2017-08-31 | 2018-03-16 | 京东方科技集团股份有限公司 | 显示基板、显示装置 |
CN107644946A (zh) * | 2017-09-15 | 2018-01-30 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板的封装方法及封装结构 |
-
2018
- 2018-09-12 CN CN201811062627.4A patent/CN109256487B/zh active Active
- 2018-10-08 US US16/344,019 patent/US11056548B1/en active Active
- 2018-10-08 WO PCT/CN2018/109289 patent/WO2020051962A1/zh active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106057853A (zh) * | 2015-04-16 | 2016-10-26 | 三星显示有限公司 | 有机发光二极管显示器 |
CN106098724A (zh) * | 2015-04-27 | 2016-11-09 | 三星显示有限公司 | 显示装置 |
CN106409869A (zh) * | 2015-07-29 | 2017-02-15 | 三星显示有限公司 | 有机发光二极管显示器 |
CN106711171A (zh) * | 2015-11-17 | 2017-05-24 | 三星显示有限公司 | 显示装置和制造显示装置的方法 |
WO2017113256A1 (zh) * | 2015-12-30 | 2017-07-06 | 深圳市柔宇科技有限公司 | 柔性显示屏及柔性显示屏制作方法 |
CN207637803U (zh) * | 2017-12-26 | 2018-07-20 | 上海和辉光电有限公司 | 一种显示面板及显示装置 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11342532B2 (en) | 2018-11-01 | 2022-05-24 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel, display device, and manufacturing methods thereof |
WO2020087868A1 (en) * | 2018-11-01 | 2020-05-07 | Boe Technology Group Co., Ltd. | Display panel, display device, and manufacturing methods thereof |
US11778853B2 (en) | 2018-11-01 | 2023-10-03 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display panel comprising an encapsulation layer, display device, and manufacturing methods thereof |
CN110190104A (zh) * | 2019-06-03 | 2019-08-30 | 武汉天马微电子有限公司 | 一种显示面板及其制造方法 |
CN110190104B (zh) * | 2019-06-03 | 2021-09-14 | 武汉天马微电子有限公司 | 一种显示面板及其制造方法 |
CN110335962A (zh) * | 2019-06-20 | 2019-10-15 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板 |
CN110491910A (zh) * | 2019-07-30 | 2019-11-22 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板及其制备方法、显示装置 |
CN110491929A (zh) * | 2019-09-05 | 2019-11-22 | 京东方科技集团股份有限公司 | 显示基板、制备方法及显示装置 |
CN110491929B (zh) * | 2019-09-05 | 2022-05-24 | 京东方科技集团股份有限公司 | 显示基板、制备方法及显示装置 |
CN110854289A (zh) * | 2019-10-29 | 2020-02-28 | 深圳市华星光电半导体显示技术有限公司 | 一种oled显示面板及显示装置 |
CN110854289B (zh) * | 2019-10-29 | 2022-05-31 | 深圳市华星光电半导体显示技术有限公司 | 一种oled显示面板及显示装置 |
CN111180489B (zh) * | 2019-12-31 | 2022-12-09 | 武汉天马微电子有限公司 | 显示面板和显示装置 |
CN111180489A (zh) * | 2019-12-31 | 2020-05-19 | 武汉天马微电子有限公司 | 显示面板和显示装置 |
CN111640881A (zh) * | 2020-06-17 | 2020-09-08 | 昆山国显光电有限公司 | 阵列基板及其制备方法 |
US20230098291A1 (en) * | 2020-07-07 | 2023-03-30 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display device, display panel, and manufacturing method thereof |
WO2022151526A1 (zh) * | 2021-01-12 | 2022-07-21 | 武汉华星光电半导体显示技术有限公司 | 可拉伸显示模组及可拉伸显示设备 |
WO2022262081A1 (zh) * | 2021-06-17 | 2022-12-22 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
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US20210183970A1 (en) | 2021-06-17 |
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