CN109216511A - The face P goes out the film LED chip and its manufacturing method of light - Google Patents
The face P goes out the film LED chip and its manufacturing method of light Download PDFInfo
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- CN109216511A CN109216511A CN201710533784.8A CN201710533784A CN109216511A CN 109216511 A CN109216511 A CN 109216511A CN 201710533784 A CN201710533784 A CN 201710533784A CN 109216511 A CN109216511 A CN 109216511A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
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- 238000000034 method Methods 0.000 claims abstract description 37
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
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- 238000005516 engineering process Methods 0.000 claims description 11
- 238000003486 chemical etching Methods 0.000 claims description 10
- 239000000084 colloidal system Substances 0.000 claims description 10
- 239000011259 mixed solution Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
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- 241000826860 Trapezium Species 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 28
- 239000010409 thin film Substances 0.000 abstract description 6
- 229910002601 GaN Inorganic materials 0.000 description 57
- 229910052594 sapphire Inorganic materials 0.000 description 16
- 239000010980 sapphire Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract
The present invention provides the film LED chip and its manufacturing method that a kind of face P goes out light, and the LED chip includes bonded substrate；Bonded layer positioned at the bonded substrate upper surface；And the LED structure positioned at the bonded layer upper surface, the LED structure includes a light emitting epitaxial layer and the electrode structure positioned at the light emitting epitaxial layer surface, wherein, the light emitting epitaxial layer includes the n-GaN layer positioned at the bonded layer upper surface, quantum well layer positioned at the upper surface n-GaN layers of, and the p-GaN layer positioned at the quantum well layer upper surface.The face P goes out the film LED chip and its manufacturing method of light through the invention, and solving the problems, such as existing thin-film LED, chip manufacturing is at high cost, yield is low due to being caused using laser lift-off technique.
Description
Technical field
The invention belongs to field of semiconductor illumination, and film LED chip and its manufacturer of light are gone out more particularly to a kind of face P
Method.
Background technique
Blue white light LED chip structure based on gallium nitride is strongly depend on substrate material used, at present major part manufacturer
Using sapphire as substrate material, 4 classes are broadly divided into as the chip structure of substrate using sapphire: positive assembling structure, upside-down mounting
Structure, film inverted structure and vertical structure.
It for positive assembling structure, is used extensively by the encapsulating products of middle low-power, advantage is that price is low；The disadvantage is that due to
The heating conduction of Sapphire Substrate is poor, so positive assembling structure heat dissipation is poor, and the electric conductivity of P-type material is also poor, therefore
Injection Current is restricted.In addition, positive assembling structure is that five faces shine, therefore cause unit area luminous flux low, and chip surface
Color homogeneity is excessively poor, partially blue right above chip, and outer ring is partially yellow, this namely positive assembling structure in use, is such as penetrated
, there is the reason of yellow circle in lamp, flat lamp etc..
In order to overcome the defects of traditional positive assembling structure heat dissipation is poor, Injection Current is limited, technical staff proposes upside-down mounting knot
Structure.For inverted structure, heat is directly delivered on such as ceramics base material by chip, and is not had to poor by heating conduction
Sapphire Substrate, therefore Injection Current can significantly improve, and the luminous flux of unit area can also be obviously improved.But due to core
Piece is that five faces shine, to the occasion for needing accurate secondary optical design, such as low-angle shot-light, mobile phone flashlight, car light, ultra-thin
Backlight and flat lamp etc. bring many inconvenience, in addition, there is also five faces of formal dress to go out the uneven color that optical chip is faced
The problem of.
In order to solve the problems, such as that inverted structure exists, it is thus proposed that film inverted structure, i.e., on the basis of inverted structure
On, by removing Sapphire Substrate with laser lift-off technique, obtain the luminous thin film chip of single side.Thin film chip has light efficiency
Rate is high, goes out light concentrates on right above chip, and it is excellent to be conducive to secondary optical design, and specific extraordinary surface color uniformity etc.
Point；But it is at high cost, good due to laser lift-off technique complex process, therefore when use laser lift-off technique manufacture film inverted structure
Rate is low and chip itself is also easy existing defects, and due to being inverted structure, there is gap between chip and ceramic substrate,
The capacity of heat transmission of chip is also reduced to a certain extent；Simultaneously as chip is very thin, it is easy to appear chip in use and splits
The problems such as trace, electric leakage.
Corresponding with film inverted structure, there are also vertical structures, i.e., after inverted structure removes Sapphire Substrate, in core
Piece bottom plates the substrate material that conductive and heat-conductive is added after high anti-material layer, makes vertical structure with single side luminescence chip
Advantage simultaneously, also has good thermally conductive, electric conductivity and high reliability；Since vertical structure has many good qualities, so vertically
Structure is the thin film chip structure being most widely used at present.But it is also because using laser lift-off technique removing sapphire lining
Bottom leads to the problem that its manufacturing cost is high, yield is low, limits thin-film LED and be more widely applied.
In consideration of it, it is necessary to design a kind of new face P go out light film LED chip and its manufacturing method it is above-mentioned to solve
Technical problem.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide the film LED cores that a kind of face P goes out light
Piece and its manufacturing method, for solving existing thin-film LED due to leading to chip manufacturing cost using laser lift-off technique
Problem high, yield is low.
In order to achieve the above objects and other related objects, the present invention provides the manufacture that a kind of face P goes out the film LED chip of light
Method, the manufacturing method include:
A) one growth substrates are provided；
B) epitaxial buffer layer is sequentially formed in the growth substrates, and including n-GaN layers, quantum well layer and p-GaN layer
Light emitting epitaxial layer；
C) epitaxial buffer layer is removed using chemical etching technology, so that the growth substrates and the light emitting epitaxial layer
Removing；
D) bonded substrate that one upper surface is formed with bonded layer is provided, and the light emitting epitaxial layer is passed through into bonded layer and institute
Bonded substrate is stated to be bonded；
E) electrode structure is made on the light emitting epitaxial layer surface.
Preferably, the successive step of the manufacturing method is a), b), c), d), e) or a), b), e), c), d).
Preferably, the epitaxial buffer layer includes three-five nitride, is prepared by MOCVD or PVD process.
Preferably, the chemical solution for removing the epitaxial buffer layer includes KOH solution, NaOH solution or H2SO4And H2PO4
Mixed solution.
Preferably, d) in further include the steps that the bonded layer upper surface or lower surface production reflecting mirror.
Preferably, include: in the method for light emitting epitaxial layer surface production electrode structure
Photoetching is carried out to the light emitting epitaxial layer, until exposing n-GaN layers described；
N electrode is made in the upper surface n-GaN layers of；And
P electrode is made in the p-GaN layer upper surface.
It preferably, include directly in the p-GaN layer in the method for light emitting epitaxial layer surface production electrode structure
Surface makes metal electrode.
Preferably, include: in the method for light emitting epitaxial layer surface production electrode structure
The side wall of the light emitting epitaxial layer is performed etching, so that the light emitting epitaxial layer forms a trapezium structure；
Photoetching is carried out to the p-GaN layer, forms the first plane, and the side wall with first plane and light emitting epitaxial layer
Second plane of connection, wherein the height of second plane is lower than the height of first plane；
Transparency conducting layer is formed in the first plane of the p-GaN layer；
N reflecting electrode is formed in the second plane of the light emitting epitaxial layer sidewall surfaces and the p-GaN layer；And
P reflecting electrode is formed on the transparency conducting layer.
The present invention also provides the film LED chip that a kind of face P goes out light, the LED chip includes:
Bonded substrate；
Bonded layer positioned at the bonded substrate upper surface；And
LED structure positioned at the bonded layer upper surface, the LED structure is including a light emitting epitaxial layer and is located at the hair
The electrode structure of light epi-layer surface, wherein the light emitting epitaxial layer includes the n-GaN layer positioned at the bonded layer upper surface,
Quantum well layer positioned at the upper surface n-GaN layers of, and the p-GaN layer positioned at the quantum well layer upper surface.
Preferably, the LED chip further includes the reflection positioned at the bonded layer upper surface or the bonded layer lower surface
Mirror.
Preferably, the bonded substrate includes one of glass substrate, metal substrate, silicon substrate or flexible substrate.
Preferably, the bonded layer includes organic colloid bonded layer or metal bonding layer, wherein the organic colloid bonding
Layer includes BCB or silica gel；The metal bonding layer includes Au or In.
Preferably, the electrode structure includes the P electrode positioned at the p-GaN layer upper surface, and is located at described n-GaN layers
The N electrode of upper surface.
Preferably, the electrode structure includes the metal electrode positioned at the p-GaN layer upper surface.
Preferably, the electrode structure includes:
Transparency conducting layer positioned at the p-GaN layer upper surface；
P reflecting electrode positioned at the transparency conducting layer upper surface；And
N reflecting electrode positioned at the light emitting epitaxial layer sidewall surfaces and its upper surface.
As described above, the face P of the invention goes out the film LED chip and its manufacturing method of light, this is had the advantages that
Invention is by forming epitaxial buffer layer in the growth substrates, using chemical etching technology while removing epitaxial buffer layer
The removing for realizing growth substrates, the problem of avoiding using the high cost of laser lift-off bring, low yield；Bonded layer is utilized simultaneously
LED structure is bonded with bonded substrate, LED chip is realized and only goes out light in the face P, substantially increase optical density and light quality, and lead to
It crosses and forms reflecting mirror in bonded layer upper surface or lower surface, improve light emission rate.
Detailed description of the invention
Fig. 1 is shown as the manufacturing method flow chart that the face P of the present invention goes out the film LED chip of light.
Fig. 2 to Fig. 7 is shown as the manufacturing process schematic diagram that the face P of the present invention goes out the film LED chip of light, wherein Fig. 5
It is shown as the film LED chip that the face P described in embodiment one goes out light, Fig. 6 is shown as the film LED that the face P described in embodiment two goes out light
Chip, Fig. 7 are shown as the film LED chip that the face P described in embodiment three goes out light.
Component label instructions
1 growth substrates
2 epitaxial buffer layers
3 light emitting epitaxial layers
31 n-GaN layers
32 quantum well layers
33 p-GaN layers
4 bonded substrates
5 bonded layers
6 reflecting mirrors
7 N electrodes
8 P electrodes
9 metal electrodes
10 transparency conducting layers
11 N reflecting electrodes
12 P reflecting electrodes
A)~e) step
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 is please referred to Fig. 7.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment one
As shown in Figure 1, the present embodiment provides the manufacturing method that a kind of face P goes out the film LED chip of light, the manufacturing method
Include:
A) one growth substrates 1 are provided；
B) epitaxial buffer layer 2 is sequentially formed in the growth substrates 1, and including n-GaN layer 31, quantum well layer 32 and p-
The light emitting epitaxial layer 3 of GaN layer 33；
C) epitaxial buffer layer 2 is removed using chemical etching technology, so that the growth substrates 1 and the luminous extension
Layer 3 is removed；
D) bonded substrate 4 that one upper surface is formed with bonded layer 5 is provided, and the light emitting epitaxial layer 3 is passed through into bonded layer 5
It is bonded with the bonded substrate 4；
E) electrode structure is made on 3 surface of light emitting epitaxial layer.
Specifically, the successive step of the manufacturing method is a), b), c), d), e) or a), b), e), c), d).
Preferably, in the present embodiment, the manufacturing method for sequence a), b), c), d), e) to be illustrated.
The manufacturing method for please referring to the film LED chip that the face P described in the present embodiment Fig. 2 to Fig. 5 goes out light below carries out in detail
It describes in detail bright.
As shown in Fig. 2, providing a growth substrates 1.
Specifically, the growth substrates 1 are Sapphire Substrate.
Preferably, before preparation, further include the steps that cleaning the Sapphire Substrate, dry, described in removal
The impurity of sapphire substrate surface.
As shown in figure 3, sequentially forming epitaxial buffer layer 2 in the growth substrates 1, and including n-GaN layer 31, Quantum Well
The light emitting epitaxial layer 3 of layer 32 and p-GaN layer 33.
Specifically, the epitaxial buffer layer 2 includes three-five nitride, prepared by MOCVD or PVD process.
Preferably, in the present embodiment, epitaxial buffer layer is successively prepared on 1 surface of growth substrates using PVD process
2, n-GaN layer 31, quantum well layer 32 and p-GaN layer 33.
As shown in figure 4, remove the epitaxial buffer layer 2 using chemical etching technology so that the growth substrates 1 with it is described
Light emitting epitaxial layer 3 is removed；The bonded substrate 4 that one upper surface is formed with bonded layer 5 is provided, and the light emitting epitaxial layer 3 is passed through
Bonded layer 5 is bonded with the bonded substrate 4.
Specifically, the chemical solution for removing the epitaxial buffer layer 2 includes KOH solution, NaOH solution or H2SO4With
H2PO4Mixed solution.
It should be noted that by utilizing KOH solution, NaOH solution or H2SO4And H2PO4Mixed solution be easy to corrode
The characteristic of three-five nitride is realized through chemical attack epitaxial buffer layer to remove growth substrates and light emitting epitaxial layer, is kept away
The problem of exempting from using high cost, low yield brought by laser lift-off technique.
Specifically, the bonded substrate 4 includes one of glass substrate, metal substrate, silicon substrate or flexible substrate.
Specifically, the bonded layer 5 includes organic colloid bonded layer or metal bonding layer, wherein the organic colloid key
Closing layer includes but is not limited to BCB or silica gel, and the metal bonding layer includes but is not limited to Au or In.
It should be noted that the selection of the bonded layer and bonded substrate is related to the structure of the LED chip, if described
When LED chip is up-down structure, it is ensured that its good electric conductivity, the bonded layer are metal bonding layer, the bonded substrate
For conductive substrates.
Preferably, further include in the step prepared using evaporation process in 5 upper surface of bonded layer or lower surface it is anti-
The step of penetrating mirror 6.
It is further preferred that in the present embodiment, the reflecting mirror 6 is formed in the upper surface of the bonded layer 5；Wherein,
The reflecting mirror 6 includes one of DBR reflecting mirror, Ag reflecting mirror or Al reflecting mirror.
As shown in figure 5, making electrode structure on 3 surface of light emitting epitaxial layer.
Specifically, the method in 3 surface of light emitting epitaxial layer production electrode structure includes first to the light emitting epitaxial layer 3
Photoetching is carried out, until exposing the n-GaN layer 31；Then in 31 upper surface of n-GaN layer production N electrode 7 and described
33 upper surface of p-GaN layer makes P electrode 8.
The film LED chip for going out light by the face P that the above method manufactures is as shown in Figure 5, comprising:
Bonded substrate 4；
Bonded layer 5 positioned at 4 upper surface of bonded substrate；And
LED structure positioned at 5 upper surface of bonded layer, the LED structure include a light emitting epitaxial layer 3 and are located at described
The electrode structure on 3 surface of light emitting epitaxial layer, wherein the light emitting epitaxial layer 3 includes the n- positioned at 5 upper surface of bonded layer
GaN layer 31, the quantum well layer 32 positioned at 31 upper surface of n-GaN layer, and the p-GaN positioned at 32 upper surface of quantum well layer
Layer 33；The electrode structure includes the P electrode 8 positioned at 33 upper surface of p-GaN layer, and is located at table on the n-GaN layer 31
The N electrode 7 in face.
Preferably, the LED chip further includes the reflecting mirror 6 positioned at 5 upper surface of bonded layer.
Embodiment two
As shown in Figure 1, the present embodiment provides the manufacturing method that a kind of face P goes out the film LED chip of light, the manufacturing method
Include:
A) one growth substrates 1 are provided；
B) epitaxial buffer layer 2 is sequentially formed in the growth substrates 1, and including n-GaN layer 31, quantum well layer 32 and p-
The light emitting epitaxial layer 3 of GaN layer 33；
C) epitaxial buffer layer 2 is removed using chemical etching technology, so that the growth substrates 1 and the luminous extension
Layer 3 is removed；
D) bonded substrate 4 that one upper surface is formed with bonded layer 5 is provided, and the light emitting epitaxial layer 3 is passed through into bonded layer 5
It is bonded with the bonded substrate 4；
E) electrode structure is made on 3 surface of light emitting epitaxial layer.
Specifically, the successive step of the manufacturing method is a), b), c), d), e) or a), b), e), c), d).
Preferably, in the present embodiment, the manufacturing method for sequence a), b), c), d), e) to be illustrated.
Below please see Fig. 2 to Fig. 4 and the face P described in the present embodiment Fig. 6 go out light film LED chip manufacturing method into
Row is described in detail.
As shown in Fig. 2, providing a growth substrates 1.
Specifically, the growth substrates 1 are Sapphire Substrate.
Preferably, before preparation, further include the steps that cleaning the Sapphire Substrate, dry, described in removal
The impurity of sapphire substrate surface.
As shown in figure 3, sequentially forming epitaxial buffer layer 2 in the growth substrates 1, and including n-GaN layer 31, Quantum Well
The light emitting epitaxial layer 3 of layer 32 and p-GaN layer 33.
Specifically, the epitaxial buffer layer 2 includes three-five nitride, prepared by MOCVD or PVD process.
Preferably, in the present embodiment, epitaxial buffer layer is successively prepared on 1 surface of growth substrates using PVD process
2, n-GaN layer 31, quantum well layer 32 and p-GaN layer 33.
As shown in figure 4, remove the epitaxial buffer layer 2 using chemical etching technology so that the growth substrates 1 with it is described
Light emitting epitaxial layer 3 is removed；The bonded substrate 4 that one upper surface is formed with bonded layer 5 is provided, and the light emitting epitaxial layer 3 is passed through
Bonded layer 5 is bonded with the bonded substrate 4.
Specifically, the chemical solution for removing the epitaxial buffer layer 2 includes KOH solution, NaOH solution or H2SO4With
H2PO4Mixed solution.
It should be noted that by utilizing KOH solution, NaOH solution or H2SO4And H2PO4Mixed solution be easy to corrode
The characteristic of three-five nitride is realized through chemical attack epitaxial buffer layer to remove growth substrates and light emitting epitaxial layer, is kept away
The problem of exempting from using high cost, low yield brought by laser lift-off technique.
Specifically, the bonded substrate 4 includes one of glass substrate, metal substrate, silicon substrate or flexible substrate.
Specifically, the bonded layer 5 includes organic colloid bonded layer or metal bonding layer, wherein the organic colloid key
Closing layer includes but is not limited to BCB or silica gel, and the metal bonding layer includes but is not limited to Au or In.
It should be noted that the selection of the bonded layer and bonded substrate is related to the structure of the LED chip, if described
When LED chip is up-down structure, it is ensured that its good electric conductivity, the bonded layer are metal bonding layer, the bonded substrate
For conductive substrates.
Preferably, further include in the step prepared using evaporation process in 5 upper surface of bonded layer or lower surface it is anti-
The step of penetrating mirror 6.
It is further preferred that in the present embodiment, the reflecting mirror 6 is formed in the upper surface of the bonded layer 5；Wherein,
The reflecting mirror 6 includes one of DBR reflecting mirror, Ag reflecting mirror or Al reflecting mirror.
As shown in fig. 6, making electrode structure on 3 surface of light emitting epitaxial layer.
Specifically, the method in 3 surface of light emitting epitaxial layer production electrode structure includes directly in the p-GaN layer 33
Upper surface makes metal electrode 9.
The film LED chip for going out light by the face P that the above method manufactures is as shown in Figure 6, comprising:
Bonded substrate 4；
Bonded layer 5 positioned at 4 upper surface of bonded substrate；And
LED structure positioned at 5 upper surface of bonded layer, the LED structure include a light emitting epitaxial layer 3 and are located at described
The electrode structure on 3 surface of light emitting epitaxial layer, wherein the light emitting epitaxial layer 3 includes the n- positioned at 5 upper surface of bonded layer
GaN layer 31, the quantum well layer 32 positioned at 31 upper surface of n-GaN layer, and the p-GaN positioned at 32 upper surface of quantum well layer
Layer 33；The electrode structure includes the metal electrode 9 positioned at 33 upper surface of p-GaN layer.
Preferably, the LED chip further includes the reflecting mirror 6 positioned at 5 upper surface of bonded layer.
Embodiment three
As shown in Figure 1, the present embodiment provides the manufacturing method that a kind of face P goes out the film LED chip of light, the manufacturing method
Include:
A) one growth substrates 1 are provided；
B) epitaxial buffer layer 2 is sequentially formed in the growth substrates 1, and including n-GaN layer 31, quantum well layer 32 and p-
The light emitting epitaxial layer 3 of GaN layer 33；
C) epitaxial buffer layer 2 is removed using chemical etching technology, so that the growth substrates 1 and the luminous extension
Layer 3 is removed；
D) bonded substrate 4 that one upper surface is formed with bonded layer 5 is provided, and the light emitting epitaxial layer 3 is passed through into bonded layer 5
It is bonded with the bonded substrate 4；
E) electrode structure is made on 3 surface of light emitting epitaxial layer.
Specifically, the successive step of the manufacturing method is a), b), c), d), e) or a), b), e), c), d).
Preferably, in the present embodiment, the manufacturing method for sequence a), b), c), d), e) to be illustrated.
Below please see Fig. 2 to Fig. 4 and the face P described in the present embodiment Fig. 7 go out light film LED chip manufacturing method into
Row is described in detail.
As shown in Fig. 2, providing a growth substrates 1.
Specifically, the growth substrates 1 are Sapphire Substrate.
Preferably, before preparation, further include the steps that cleaning the Sapphire Substrate, dry, described in removal
The impurity of sapphire substrate surface.
As shown in figure 3, sequentially forming epitaxial buffer layer 2 in the growth substrates 1, and including n-GaN layer 31, Quantum Well
The light emitting epitaxial layer 3 of layer 32 and p-GaN layer 33.
Specifically, the epitaxial buffer layer 2 includes three-five nitride, prepared by MOCVD or PVD process.
Preferably, in the present embodiment, epitaxial buffer layer is successively prepared on 1 surface of growth substrates using PVD process
2, n-GaN layer 31, quantum well layer 32 and p-GaN layer 33.
As shown in figure 4, remove the epitaxial buffer layer 2 using chemical etching technology so that the growth substrates 1 with it is described
Light emitting epitaxial layer 3 is removed；The bonded substrate 4 that one upper surface is formed with bonded layer 5 is provided, and the light emitting epitaxial layer 3 is passed through
Bonded layer 5 is bonded with the bonded substrate 4.
Specifically, the chemical solution for removing the epitaxial buffer layer 2 includes KOH solution, NaOH solution or H2SO4With
H2PO4Mixed solution.
It should be noted that by utilizing KOH solution, NaOH solution or H2SO4And H2PO4Mixed solution be easy to corrode
The characteristic of three-five nitride is realized through chemical attack epitaxial buffer layer to remove growth substrates and light emitting epitaxial layer, is kept away
The problem of exempting from using high cost, low yield brought by laser lift-off technique.
Specifically, the bonded substrate 4 includes one of glass substrate, metal substrate, silicon substrate or flexible substrate.
Specifically, the bonded layer 5 includes organic colloid bonded layer or metal bonding layer, wherein the organic colloid key
Closing layer includes but is not limited to BCB or silica gel, and the metal bonding layer includes but is not limited to Au or In.
It should be noted that the selection of the bonded layer and bonded substrate is related to the structure of the LED chip, if described
When LED chip is up-down structure, it is ensured that its good electric conductivity, the bonded layer are metal bonding layer, the bonded substrate
For conductive substrates.
Preferably, further include in the step prepared using evaporation process in 5 upper surface of bonded layer or lower surface it is anti-
The step of penetrating mirror 6.
It is further preferred that in the present embodiment, the reflecting mirror 6 is formed in the upper surface of the bonded layer 5；Wherein,
The reflecting mirror 6 includes one of DBR reflecting mirror, Ag reflecting mirror or Al reflecting mirror.
As shown in fig. 7, making electrode structure on 3 surface of light emitting epitaxial layer.
Specifically, the method in 3 surface of light emitting epitaxial layer production electrode structure includes:
The side wall of the light emitting epitaxial layer 3 is performed etching, so that the light emitting epitaxial layer 3 forms a trapezium structure；
Photoetching is carried out to the p-GaN layer 33, forms the first plane, and the side with first plane and light emitting epitaxial layer
Second plane of wall connection, wherein the height of second plane is lower than the height of first plane；
Transparency conducting layer 10 is formed in the first plane of the p-GaN layer 33；
N reflecting electrode 11 is formed in the second plane of the light emitting epitaxial layer sidewall surfaces and the p-GaN layer；And
P reflecting electrode 12 is formed on the transparency conducting layer 10.
By the above method manufacture the face P go out light film LED chip as shown in fig. 7, comprises:
Bonded substrate 4；
Bonded layer 5 positioned at 4 upper surface of bonded substrate；And
LED structure positioned at 5 upper surface of bonded layer, the LED structure include a light emitting epitaxial layer 3 and are located at described
The electrode structure on 3 surface of light emitting epitaxial layer, wherein the light emitting epitaxial layer 3 includes the n- positioned at 5 upper surface of bonded layer
GaN layer 31, the quantum well layer 32 positioned at 31 upper surface of n-GaN layer, and the p-GaN positioned at 32 upper surface of quantum well layer
Layer 33；The electrode structure includes the transparency conducting layer 10 positioned at 33 upper surface of p-GaN layer, is located at the transparency conducting layer
The P reflecting electrode 12 of 10 upper surfaces, and the N reflecting electrode 11 positioned at 3 sidewall surfaces of light emitting epitaxial layer and its upper surface.
Preferably, the LED chip further includes the reflecting mirror 6 positioned at 5 upper surface of bonded layer.
In conclusion the face P of the invention goes out the film LED chip and its manufacturing method of light, this is had the advantages that
Invention is by forming epitaxial buffer layer in the growth substrates, using chemical etching technology while removing epitaxial buffer layer
The removing for realizing growth substrates, the problem of avoiding using the high cost of laser lift-off bring, low yield；Bonded layer is utilized simultaneously
LED structure is bonded with bonded substrate, LED chip is realized and only goes out light in the face P, substantially increase optical density and light quality, and lead to
It crosses and forms reflecting mirror in bonded layer upper surface or lower surface, improve light emission rate.So the present invention effectively overcomes the prior art
In various shortcoming and have high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (15)
1. the manufacturing method that a kind of face P goes out the film LED chip of light, which is characterized in that the manufacturing method includes:
A) one growth substrates are provided；
B) epitaxial buffer layer is sequentially formed in the growth substrates, and the hair including n-GaN layers, quantum well layer and p-GaN layer
Light epitaxial layer；
C) epitaxial buffer layer is removed using chemical etching technology, so that the growth substrates and the light emitting epitaxial layer are shelled
From；
D) bonded substrate that one upper surface is formed with bonded layer is provided, and the light emitting epitaxial layer is passed through into bonded layer and the key
Substrate is closed to be bonded；
E) electrode structure is made on the light emitting epitaxial layer surface.
2. the manufacturing method that the face P according to claim 1 goes out the film LED chip of light, which is characterized in that the manufacturer
The successive step of method is a), b), c), d), e) or a), b), e), c), d).
3. the manufacturing method that the face P according to claim 1 goes out the film LED chip of light, which is characterized in that delay outside described
Rushing layer includes three-five nitride, is prepared by MOCVD or PVD process.
4. the manufacturing method that the face P according to claim 1 goes out the film LED chip of light, which is characterized in that go except as noted
The chemical solution for prolonging buffer layer includes KOH solution, NaOH solution or H2SO4And H2PO4Mixed solution.
5. the manufacturing method that the face P according to claim 1 goes out the film LED chip of light, which is characterized in that further include in d)
In the step of bonded layer upper surface or lower surface make reflecting mirror.
6. the manufacturing method that the face P according to claim 1 goes out the film LED chip of light, which is characterized in that shine described
Epi-layer surface production electrode structure method include:
Photoetching is carried out to the light emitting epitaxial layer, until exposing n-GaN layers described；
N electrode is made in the upper surface n-GaN layers of；And
P electrode is made in the p-GaN layer upper surface.
7. the production method that the face P according to claim 1 goes out the film LED chip of light, which is characterized in that shine described
The method that epi-layer surface makes electrode structure includes directly making metal electrode in the p-GaN layer upper surface.
8. the production method that the face P according to claim 1 goes out the film LED chip of light, which is characterized in that shine described
Epi-layer surface production electrode structure method include:
The side wall of the light emitting epitaxial layer is performed etching, so that the light emitting epitaxial layer forms a trapezium structure；
Photoetching is carried out to the p-GaN layer, forms the first plane, and connect with the side wall of first plane and light emitting epitaxial layer
The second plane, wherein the height of second plane be lower than first plane height；
Transparency conducting layer is formed in the first plane of the p-GaN layer；
N reflecting electrode is formed in the second plane of the light emitting epitaxial layer sidewall surfaces and the p-GaN layer；And
P reflecting electrode is formed on the transparency conducting layer.
9. the film LED chip that a kind of face P goes out light, which is characterized in that the LED chip includes:
Bonded substrate；
Bonded layer positioned at the bonded substrate upper surface；And
LED structure positioned at the bonded layer upper surface, the LED structure include a light emitting epitaxial layer and are located at outside described shine
Prolong the electrode structure of layer surface, wherein the light emitting epitaxial layer includes the n-GaN layer positioned at the bonded layer upper surface, is located at
The quantum well layer of the upper surface n-GaN layers of, and the p-GaN layer positioned at the quantum well layer upper surface.
10. the film LED chip that the face P according to claim 9 goes out light, which is characterized in that the LED chip further includes position
Reflecting mirror in the bonded layer upper surface or the bonded layer lower surface.
11. the film LED chip that the face P according to claim 9 goes out light, which is characterized in that the bonded substrate includes glass
One of glass substrate, metal substrate, silicon substrate or flexible substrate.
12. the film LED chip that the face P according to claim 9 goes out light, which is characterized in that the bonded layer includes organic
Colloid bonded layer or metal bonding layer, wherein the organic colloid bonded layer includes BCB or silica gel；The metal bonding layer packet
Include Au or In.
13. the film LED chip that the face P according to claim 9 goes out light, which is characterized in that the electrode structure includes position
P electrode in the p-GaN layer upper surface, and the N electrode positioned at the upper surface n-GaN layers of.
14. the film LED chip that the face P according to claim 9 goes out light, which is characterized in that the electrode structure includes position
Metal electrode in the p-GaN layer upper surface.
15. the film LED chip that the face P according to claim 9 goes out light, which is characterized in that the electrode structure includes:
Transparency conducting layer positioned at the p-GaN layer upper surface；
P reflecting electrode positioned at the transparency conducting layer upper surface；And
N reflecting electrode positioned at the light emitting epitaxial layer sidewall surfaces and its upper surface.
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| CN201710533784.8A CN109216511A (en) | 2017-07-03 | 2017-07-03 | The face P goes out the film LED chip and its manufacturing method of light |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114122227A (en) * | 2022-01-26 | 2022-03-01 | 山东省科学院激光研究所 | Inverted flexible GaN-based LED and preparation method thereof |
| CN114512504A (en) * | 2022-01-28 | 2022-05-17 | 上海芯元基半导体科技有限公司 | Light crosstalk prevention Micro-LED chip structure, preparation method and Micro-LED display device |
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| US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| CN104916771A (en) * | 2014-03-12 | 2015-09-16 | 山东浪潮华光光电子股份有限公司 | Substrate-replaced normally-mounted GaN-based light-emitting diode chip and preparation method thereof |
| CN104993023A (en) * | 2015-05-29 | 2015-10-21 | 上海芯元基半导体科技有限公司 | Method for removing growth substrate by utilizing chemical corrosion method |
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| US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| CN104916771A (en) * | 2014-03-12 | 2015-09-16 | 山东浪潮华光光电子股份有限公司 | Substrate-replaced normally-mounted GaN-based light-emitting diode chip and preparation method thereof |
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| CN114122227A (en) * | 2022-01-26 | 2022-03-01 | 山东省科学院激光研究所 | Inverted flexible GaN-based LED and preparation method thereof |
| CN114512504A (en) * | 2022-01-28 | 2022-05-17 | 上海芯元基半导体科技有限公司 | Light crosstalk prevention Micro-LED chip structure, preparation method and Micro-LED display device |
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