CN109192722A - 一种led倒装芯片封装工艺 - Google Patents
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Abstract
本发明提供一种LED倒装芯片封装工艺,包括以下步骤:(1)固晶:在基板上制作焊盘,在焊盘上的预设位置点锡膏,LED倒装芯片的正负极贴在锡膏上;所述焊盘与基板之间设置有第一DBR反射层;(2)回流焊:通过对锡膏进行回流焊,将LED倒装芯片的正负极焊接在焊盘上;(3)围坝:在LED倒装芯片的外围形成一围坝圈,围坝圈包围所有LED倒装芯片,在围坝圈的内侧设置有第二DBR反射层;(4)涂覆荧光胶层:在所述LED倒装芯片的上表面涂覆荧光胶层,再放入烤箱进行烘干。通过该封装工艺制成的LED光源具有出光效率高,散热性能好的特点。
Description
技术领域
本发明涉及LED封装技术领域,尤其涉及一种LED倒装芯片封装工艺。
背景技术
LED封装是将LED芯片转变为照明光源的关键步骤,采用高分子封装材料把LED芯片密封在支架或基板内,通过激发荧光粉发出白光并满足一系列照明的技术要求。另外LED封装也起到保护LED芯片的作用,保护LED芯片免受外界环境的不良影响,使其能正常工作于各种照明场合。在现有技术的LED芯片封装过程中,由于荧光材料的热沉,会引起出光效果不稳定,如出光效率变低、色温范围变窄等,同时在受激跃迁产生不同光线时会放出一定的热量,热量的增加会提高整个光源的温度,从而影响LED光源的寿命和其他特性。对于大功率的LED灯源来说,散热问题和出光效率问题仍然是当下较难解决的问题。
发明内容
本发明提供一种LED倒装芯片封装工艺,通过该封装工艺,大大降低了LED倒装芯片的热量,同时也降低了整个LED光源的热量和提高其出光效率。
为了解决上述技术问题,本发明所采取的技术方案为:
一种LED倒装芯片封装工艺,包括以下步骤:
(1)固晶:在基板上制作焊盘,在焊盘上的预设位置点锡膏,LED倒装芯片的正负极贴在锡膏上;所述焊盘与基板之间设置有第一DBR反射层;
(2)回流焊:通过对锡膏进行回流焊,将LED倒装芯片的正负极焊接在焊盘上;
(3)围坝:在LED倒装芯片的外围形成一围坝圈,围坝圈包围所有LED倒装芯片,在围坝圈的内侧设置有第二DBR反射层;
(4)涂覆荧光胶层:在所述LED倒装芯片的上表面涂覆荧光胶层,再放入烤箱进行烘干。
进一步地,所述第二DBR反射层由两种不同折射率的导热薄膜以ABAB周期排列所形成,导热薄膜可以有效的将在荧光层中散出的热量进行传导,从而降低了光源内部的温度,提高了整个光源的物理特性。同时,该薄膜对光线起到高反射的作用,提高了出光效率。
优选地,所述第二DBR反射层由ITO导热薄膜和AZO导热薄膜以ABAB周期排列所形成。
进一步地,所述第一DBR反射层由两种不同折射率的绝缘薄膜以ABAB周期排列所形成。该第一DBR反射层直接充当基板与焊盘之间的绝缘层,同时可以将倒装芯片的光线进一步反射出去,进一步提高了出光效果。
优选地,所述第一DBR反射层由TiO2绝缘薄膜和SiO2绝缘薄膜以ABAB周期排列所形成。
进一步地,所述荧光胶层包括第一硅胶层、第二硅胶层、第三硅胶层以及预成型的第一荧光薄膜和预成型的第二荧光薄膜,所述第一荧光薄膜设置在第一硅胶层与第二硅胶层之间,所述第二荧光薄膜设置在所述第二硅胶层与第三硅胶层之间,第一硅胶层覆盖在LED倒装芯片上。不同的荧光薄膜层先预成型再设置在硅胶层之间可以避免由于荧光粉在胶体内热沉引起的问题,同时不同的荧光层可以激发不同的出射光,使得色温范围更加宽,出光效果更好。
优选地,所述LED倒装芯片为蓝光LED倒装芯片,所述第一荧光薄膜由红色荧光粉预成型而成,所述第二荧光薄膜由黄色荧光粉预成型而成。
回流焊过程中,对LED倒装芯片施加微压,该工艺使用六温区回流焊进行焊接,每一温区的温度大小以及相应的维持时间依次为215度和15s,240度和5秒,215度和15秒,200度和20秒,190度和20秒,180度和20秒。在回流焊过程中,对LED倒装芯片施加微压可以提高焊接品质,减少空洞的出现概率;同时通过合理设置回流焊温度和时间可以大大提高回流焊效果,进一步提升整个LED光源的性能。
本发明提供一种LED倒装芯片封装工艺,包括以下步骤:(1)固晶:在基板上制作焊盘,在焊盘上的预设位置点锡膏,LED倒装芯片的正负极贴在锡膏上;所述焊盘与基板之间设置有第一DBR反射层;(2)回流焊:通过对锡膏进行回流焊,将LED倒装芯片的正负极焊接在焊盘上;(3)围坝:在LED倒装芯片的外围形成一围坝圈,围坝圈包围所有LED倒装芯片,在围坝圈的内侧设置有第二DBR反射层;(4)涂覆荧光胶层:在所述LED倒装芯片的上表面涂覆荧光胶层,再放入烤箱进行烘干。通过该封装工艺制成的LED光源具有出光效率高,散热性能好的特点。
附图说明
图1是本发明一种LED倒装芯片封装结构示意图。
具体实施方式
下面结合附图,具体阐明本发明的实施方式,附图仅供参考和说明使用,不构成对本发明专利保护范围的限制。
如图1所示,一种LED倒装芯片封装工艺,包括以下步骤:
(1)固晶:在基板1上制作焊盘,在焊盘上的预设位置点锡膏,LED倒装芯片2的正负极贴在锡膏上,本实施例选取德豪润达的蓝光LED倒装芯片,焊盘在基板上的位置和芯片排布的电极位置一一对应;所述焊盘与基板1之间设置有第一DBR(分布式布拉格反射镜)反射层5;
(2)回流焊:通过对锡膏进行回流焊,将LED倒装芯片2的正负极焊接在焊盘上;
(3)围坝:在LED倒装芯片2的外围形成一围坝圈3,围坝圈3包围所有LED倒装芯片,在围坝圈3的内侧设置有第二DBR反射层6;第二DBR反射层可以直接连接至基板,焊盘靠近围坝圈留有较宽的空隙,所以不会导通。
(4)涂覆荧光胶层:在所述LED倒装芯片2的上表面涂覆荧光胶层4,再放入烤箱进行烘干。
所述第二DBR反射层由两种不同折射率的导热薄膜以ABAB周期排列所形成,导热薄膜可以有效的将在荧光层中散出的热量进行传导,从而降低了光源内部的温度,提高了整个光源的物理特性。同时,该薄膜对光线起到高反射的作用,提高了出光效率。本实施例中,第二DBR反射层由ITO导热薄膜和AZO导热薄膜以ABAB周期排列所形成,周期数为10个周期,即形成20层。
所述第一DBR反射层由两种不同折射率的绝缘薄膜以ABAB周期排列所形成。该第一DBR反射层直接充当基板与焊盘之间的绝缘层,同时可以将倒装芯片的光线进一步反射出去,进一步提高了出光效果。本实施例中,所述第一DBR反射层由TiO2绝缘薄膜和SiO2绝缘薄膜以ABAB周期排列所形成。周期数为25个周期,即形成50层
所述荧光胶层4包括第一硅胶层41、第二硅胶层43、第三硅胶层45以及预成型的第一荧光薄膜42和预成型的第二荧光薄膜44,所述第一荧光薄膜42设置在第一硅胶层41与第二硅胶层43之间,所述第二荧光薄膜44设置在所述第二硅胶层43与第三硅胶层45之间,第一硅胶层41直接覆盖在LED倒装芯片2上。不同的荧光薄膜层先预成型再设置在硅胶层之间可以避免由于荧光粉在胶体内热沉引起的问题,同时不同的荧光层可以激发不同的出射光,使得色温范围更加宽,出光效果更好。具体地,所述LED倒装芯片为蓝光LED倒装芯片,所述第一荧光薄膜42由红色荧光粉预成型而成,所述第二荧光薄膜44由黄色荧光粉预成型而成。
回流焊过程中,对LED倒装芯片施加微压,该工艺使用六温区回流焊进行焊接,每一温区的温度大小以及相应的维持时间依次为215度和15s,240度和5秒,215度和15秒,200度和20秒,190度和20秒,180度和20秒,也就是说在215度保持15秒,再在240度保持5秒,后续同理,不但可以形成较好的焊接面,焊接内部品质较好,逐步降温起到一定退火作用,减少了空洞的产生。在回流焊过程中,对LED倒装芯片施加微压可以提高焊接品质,减少空洞的出现概率;同时通过合理设置回流焊温度和时间可以大大提高回流焊效果,进一步提升整个LED光源的性能。
以上所揭露的仅为本发明的较佳实施例,不能以此来限定本发明的权利保护范围,因此依本发明申请专利范围所作的等同变化,仍属本发明所涵盖的范围。
Claims (9)
1.一种LED倒装芯片封装工艺,其特征在于包括以下步骤:
(1)固晶:在基板上制作焊盘,在焊盘上的预设位置点锡膏,LED倒装芯片的正负极贴在锡膏上;所述焊盘与基板之间设置有第一DBR反射层;
(2)回流焊:通过对锡膏进行回流焊,将LED倒装芯片的正负极焊接在焊盘上;
(3)围坝:在LED倒装芯片的外围形成一围坝圈,围坝圈包围所有LED倒装芯片,在围坝圈的内侧设置有第二DBR反射层;
(4)涂覆荧光胶层:在所述LED倒装芯片的上表面涂覆荧光胶层,再放入烤箱进行烘干固化。
2.根据权利要求1所述的一种LED倒装芯片封装工艺,其特征在于:所述第二DBR反射层由两种不同折射率的导热薄膜以ABAB周期排列所形成。
3.根据权利要求2所述的一种LED倒装芯片封装工艺,其特征在于:所述第二DBR反射层由ITO导热薄膜和AZO导热薄膜以ABAB周期排列所形成。
4.根据权利要求1所述的一种LED倒装芯片封装工艺,其特征在于:所述第一DBR反射层由两种不同折射率的绝缘薄膜以ABAB周期排列所形成。
5.根据权利要求4所述的一种LED倒装芯片封装工艺,其特征在于:所述第一DBR反射层由TiO2绝缘薄膜和SiO2绝缘薄膜以ABAB周期排列所形成。
6.根据权利要求1所述的一种LED倒装芯片封装工艺,其特征在于:所述荧光胶层包括第一硅胶层、第二硅胶层、第三硅胶层以及预成型的第一荧光薄膜和预成型的第二荧光薄膜,所述第一荧光薄膜设置在第一硅胶层与第二硅胶层之间,所述第二荧光薄膜设置在所述第二硅胶层与第三硅胶层之间,第一硅胶层直接覆盖在LED倒装芯片上。
7.根据权利要求6所述的一种LED倒装芯片封装工艺,其特征在于:所述LED倒装芯片为蓝光LED倒装芯片,所述第一荧光薄膜由红色荧光粉预成型而成,所述第二荧光薄膜由黄色荧光粉预成型而成。
8.根据权利要求1所述的一种LED倒装芯片封装工艺,其特征在于:回流焊过程中,对LED倒装芯片施加微压。
9.根据权利要求8所述的一种LED倒装芯片封装工艺,其特征在于:该工艺使用六温区回流焊进行焊接,每一温区的温度大小以及相应的维持时间依次为215度和15s,240度和5秒,215度和15秒,200度和20秒,190度和20秒,180度和20秒。
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265388A (zh) * | 2019-07-12 | 2019-09-20 | 威海金丰电子有限公司 | 基于蜂窝状排列的led面光源光引擎及其生产方法 |
CN110323321A (zh) * | 2019-06-28 | 2019-10-11 | 厦门多彩光电子科技有限公司 | 一种led灯珠和led灯具 |
CN110323320A (zh) * | 2019-06-28 | 2019-10-11 | 厦门多彩光电子科技有限公司 | 一种led封装方法 |
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CN111540732A (zh) * | 2020-05-09 | 2020-08-14 | 中山市木林森电子有限公司 | Cob光源及其制作方法 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202405318U (zh) * | 2011-11-09 | 2012-08-29 | 深圳市灏天光电有限公司 | 一种集成大功率led封装结构 |
CN103715346A (zh) * | 2012-09-28 | 2014-04-09 | 欧司朗股份有限公司 | Led照明单元及其制造方法 |
CN105390457A (zh) * | 2015-10-19 | 2016-03-09 | 江苏稳润光电有限公司 | 一种低成本、高可靠性csp封装体及其封装方法 |
CN106159060A (zh) * | 2015-04-09 | 2016-11-23 | 湖南博元照明科技有限公司 | 一种led封装工艺 |
CN205863219U (zh) * | 2016-06-30 | 2017-01-04 | 王正作 | 一种多管芯的led封装 |
CN106678563A (zh) * | 2017-02-21 | 2017-05-17 | 中国人民大学 | 一种光热一体化led照明灯具及其制备方法 |
CN206282876U (zh) * | 2016-10-27 | 2017-06-27 | 广东工业大学 | 一种led倒装结构 |
CN106920870A (zh) * | 2017-02-24 | 2017-07-04 | 广东工业大学 | 一种大功率紫外led芯片共晶焊倒装结构 |
CN207052626U (zh) * | 2017-07-27 | 2018-02-27 | 深圳市德润达光电股份有限公司 | 一种倒装led光源 |
-
2018
- 2018-08-07 CN CN201810892306.0A patent/CN109192722A/zh active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202405318U (zh) * | 2011-11-09 | 2012-08-29 | 深圳市灏天光电有限公司 | 一种集成大功率led封装结构 |
CN103715346A (zh) * | 2012-09-28 | 2014-04-09 | 欧司朗股份有限公司 | Led照明单元及其制造方法 |
CN106159060A (zh) * | 2015-04-09 | 2016-11-23 | 湖南博元照明科技有限公司 | 一种led封装工艺 |
CN105390457A (zh) * | 2015-10-19 | 2016-03-09 | 江苏稳润光电有限公司 | 一种低成本、高可靠性csp封装体及其封装方法 |
CN205863219U (zh) * | 2016-06-30 | 2017-01-04 | 王正作 | 一种多管芯的led封装 |
CN206282876U (zh) * | 2016-10-27 | 2017-06-27 | 广东工业大学 | 一种led倒装结构 |
CN106678563A (zh) * | 2017-02-21 | 2017-05-17 | 中国人民大学 | 一种光热一体化led照明灯具及其制备方法 |
CN106920870A (zh) * | 2017-02-24 | 2017-07-04 | 广东工业大学 | 一种大功率紫外led芯片共晶焊倒装结构 |
CN207052626U (zh) * | 2017-07-27 | 2018-02-27 | 深圳市德润达光电股份有限公司 | 一种倒装led光源 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110323321A (zh) * | 2019-06-28 | 2019-10-11 | 厦门多彩光电子科技有限公司 | 一种led灯珠和led灯具 |
CN110323320A (zh) * | 2019-06-28 | 2019-10-11 | 厦门多彩光电子科技有限公司 | 一种led封装方法 |
CN110265388A (zh) * | 2019-07-12 | 2019-09-20 | 威海金丰电子有限公司 | 基于蜂窝状排列的led面光源光引擎及其生产方法 |
CN110985906A (zh) * | 2019-11-19 | 2020-04-10 | 上海安珂麟汽车科技有限公司 | 一种汽车尾灯的安装工艺 |
CN111540732A (zh) * | 2020-05-09 | 2020-08-14 | 中山市木林森电子有限公司 | Cob光源及其制作方法 |
CN112447896A (zh) * | 2020-05-26 | 2021-03-05 | 开发晶照明(厦门)有限公司 | 光电器件及其制作方法 |
US11569213B2 (en) | 2020-05-26 | 2023-01-31 | Kaistar Lighting (Xiamen) Co., Ltd. | Optoelectronic device and manufacturing method thereof |
CN112563389A (zh) * | 2020-12-10 | 2021-03-26 | 惠州东君光源科技有限公司 | 新型背光灯条及其制造方法 |
CN113985652A (zh) * | 2021-10-19 | 2022-01-28 | 惠州视维新技术有限公司 | 一种背光板、显示装置及背光板的制备工艺 |
CN114203559A (zh) * | 2021-11-04 | 2022-03-18 | 江苏普诺威电子股份有限公司 | 在封装载板中嵌入倒装芯片的封装工艺 |
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