CN109187580B - Method for detecting defects of silicon polished wafer - Google Patents
Method for detecting defects of silicon polished wafer Download PDFInfo
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- CN109187580B CN109187580B CN201811296337.6A CN201811296337A CN109187580B CN 109187580 B CN109187580 B CN 109187580B CN 201811296337 A CN201811296337 A CN 201811296337A CN 109187580 B CN109187580 B CN 109187580B
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
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Abstract
The invention discloses a method for detecting defects of a silicon crystal polished wafer, which comprises the following steps: vertically irradiating a light condensing source on a silicon wafer polished wafer cleaned in advance in a dark room environment so as to detect the defects of the silicon wafer polished wafer, wherein the illumination of the light condensing source is higher than 40 Miller; the detection method is simple and easy to implement, expensive professional equipment is not needed, and the production cost is greatly reduced; the effect is visual, and the identification can be directly carried out by naked eyes; the training cost is low, the effect is quick, and the silicon wafer can be put into use immediately, so that the silicon wafer is suitable for the field of silicon wafers.
Description
Technical Field
The invention belongs to the field of monocrystalline silicon wafer research, and relates to a method for detecting defects of a polished silicon wafer.
Background
A silicon wafer as an IC substrate is required to be produced by cutting a single crystal silicon rod and then subjecting the cut silicon wafer to a large amount of physical, chemical, and thermal treatments. A silicon single crystal rod is generally obtained by a Czochralski method (CZ method — hereinafter, referred to as "CZ method") in which a seed crystal is immersed in molten silicon having a high purity (99.9999999% or more) in a quartz crucible and the single crystal is Grown by pulling, but a fine defect called a Grown-in defect is introduced into the crystal during the growth of the single crystal.
The Grown-in defect is related to the pulling rate at the time of growing a single crystal and the distribution of the internal temperature of the single crystal after solidification (the temperature gradient in the crystal in the pulling axis direction), and exists in the single crystal in the form of a void-type agglomerated defect having a size of about 0.1 to 0.3 μm, called cop (crystal ordered particle), or the like, and a defect formed by micro-Dislocation having a size of about 10 μm, called Dislocation Cluster (Dislocation Cluster), or the like.
COP is a factor that causes a decrease in the breakdown voltage of the oxide film at the initial stage, and dislocation clusters are also a cause of poor characteristics of devices formed thereon.
In addition, the polishing quality of the IC silicon wafer also directly influences the breakdown characteristic, the interface state and the minority carrier lifetime, and has larger influence on surface devices such as MOS, CCD and the like. The polishing mist of the silicon wafer is one of important parameters for high-quality polishing, and particularly, the evaluation of the fine polishing quality of the silicon wafer is more important.
In addition, in recent years, the IC is rapidly developed towards high integration, shallow junction and high performance, and along with the demand for miniaturization and high precision, the IC linewidth has been highly developed towards 5nm according to moore's law and the strategic planning of various IC manufacturers; the whole IC industry has higher and higher requirements on the polishing quality of silicon wafers and the COP control technology in the manufacturing process, so how to efficiently and conveniently detect the polishing quality defects (polishing haze) and the COPs of the silicon wafers has higher requirements.
Whether the silicon wafer has COP is checked, and whether the silicon wafer is qualified or not is judged by using the number of COP and the existence of patterns; one of the COP detection methods is called a copper deposition method (copper decoration method). This is a method of utilizing a phenomenon that when an insulating film (oxide film) is formed on the surface of a silicon wafer, the oxide film becomes non-uniform at a portion where COP exists. In the method, after an oxide film with a specified thickness is formed on the surface of a wafer, an external voltage is applied to enable copper to be precipitated at the same time of oxide film rupture at COP positions on the surface of the silicon wafer; the precipitated copper was observed with the naked eye, and COP was measured by observation with a Transmission Electron Microscope (TEM) or a Scanning Electron Microscope (SEM). However, the COP detection method is complicated and requires expensive professional equipment to be suitable for analytical research, and is not suitable for popularization in mass daily production of silicon wafer production lines.
Whether the polishing fog exists on the silicon wafer polishing sheet or not is checked, particularly when the silicon wafer polishing sheet passes through a particle detection machine, if the polishing fog on the surface of the silicon wafer polishing sheet is serious, the particles reflected by the silicon wafer polishing sheet are abnormal and more, and for the test machine, it is difficult to distinguish whether the tested 'particles' are COP (coefficient of performance), polishing fog or real particles which are not cleaned.
Although detection of COP in silicon wafer processing can be achieved by a particle tester (KLA-Tencor) after removal of polishing haze. However, this will definitely occupy the limited testing capacity of particles in the silicon wafer manufacturing process and consume the useful life of the expensive testing machine, which will affect the shipment rate of the silicon wafer factory and increase the maintenance cost of the testing equipment of the silicon wafer factory.
Polishing of the silicon wafer is divided into rough polishing, fine polishing and fine polishing, wherein the rough polishing aims to efficiently remove high damage and distortion layers caused by grinding and achieve certain flatness and smoothness; the main task of fine polishing is to remove a micro-damage layer generated in the course of rough polishing and realize high surface smoothness; the fine polishing is used for further fine polishing and chemical stripping, and only the nano-scale removal quantity further improves the surface smoothness of the polished silicon wafer. The polishing mist is generated because the surface roughness (haze) of the silicon wafer, which is exhibited by the inability of the fine polishing/finish polishing to remove the damaged layer existing after the rough polishing of the silicon wafer within a predetermined time, is excessively large.
CN10466876A discloses a COP evaluation method for a single crystal silicon wafer, which is characterized in that an evaluation region of a wafer to be evaluated is divided into concentric circles in a radial direction, an upper limit value of the number of COPs in each divided evaluation region is set, and the acceptance or rejection of the single crystal silicon wafer is determined based on the upper limit value, so that the COPs can be evaluated quantitatively and objectively, and accurate determination can be made based on a clear criterion; this method is an explicit reference method based on quantification, but its detection method is complicated and is not suitable for industrial application.
CN1815205A discloses a testing device and a testing method for inducing surface COP of a silicon wafer by Cu, belonging to the technical field of detection methods. The method mainly comprises the steps of oxidizing a tested silicon wafer, removing an oxide film on the back of the silicon wafer, filling a chemical reaction tank with a methanol solution, sequentially placing a first copper plate, the silicon wafer, a silicon dioxide film, a second copper plate and an electrode, then tightly covering a cover, connecting the electrode with the second copper plate, and connecting the electrode with a positive terminal of a power supply through a lead; the first copper plate is connected with the negative end of the power supply through a lead; a direct current power supply is used for supplying direct current between the first copper plate and the second copper plate; then discharging the methanol solution from the chemical reaction tank, taking out the silicon wafer, and measuring the number of defects of the silicon wafer after drying treatment; the method has good sensitivity and flexibility, but the detection method is complex and is not beneficial to industrial application.
Therefore, it is necessary to develop a method for rapidly detecting the silicon crystal void type primary lattice microdefects.
Disclosure of Invention
The invention aims to provide a method for detecting defects of a silicon wafer, which is simple and easy to implement, does not need expensive professional equipment, greatly reduces the production cost, has intuitive effect, can be directly identified by naked eyes, has low training cost and quick response, and can be immediately put into use, thereby being suitable for the field of silicon wafers.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention aims to provide a method for detecting silicon wafer defects, which comprises the following steps: and in a darkroom environment, vertically irradiating a light condensing source on the silicon polished wafer so as to detect the defects of the silicon polished wafer.
The detection method provided by the invention is simple and easy to implement and convenient to realize; expensive professional equipment is not needed, and the detection cost is greatly reduced; the detection effect is visual, and the detection can be directly observed by naked eyes; the training cost is low, the effect is quick, the training can be immediately put into use, and the method is suitable for large-scale application of an industrial production line.
In the present invention, the illuminance of the light-collecting light source is higher than 40 ten thousand lux, for example, 40 ten thousand lux, 50 ten thousand lux, 60 ten thousand lux, 70 ten thousand lux, 80 ten thousand lux, 90 ten thousand lux, 100 ten thousand lux, 200 ten thousand lux, 300 ten thousand lux, and the like, and preferably 40 ten thousand to 60 ten thousand lux.
The illumination intensity is higher than 40 kilo, so that enough luminous flux can be received in the unit area of the silicon polished wafer; the optimal selection is 40-60 Miller, so that the unit area can be ensured to receive proper luminous flux, the defects of the silicon polished wafer can be accurately judged, and the phenomenon that the human eyes are damaged to a certain extent due to too high illumination can be avoided; if the illumination is less than 40 kilo-lux, the luminous flux received per unit area is small, and the defect of the silicon polished wafer cannot be accurately judged.
In the invention, the silicon polished wafer defect is a crystal cavity type primary crystal lattice micro defect or a polishing fog defect.
In the invention, the crystal cavity type primary crystal lattice micro defect or the polishing fog defect is two common defects in the silicon polishing sheet, the occupied proportion is higher, the silicon wafer is firstly detected by the detection method provided by the invention in the industrial production, and if the crystal cavity type primary crystal lattice micro defect or the polishing fog defect exists, the silicon polishing sheet is classified as a defective product; if the two defects do not exist, the corresponding instrument is used for judgment, so that the maintenance cost of the related instrument can be reduced, the operator can be trained easily, and the method can be popularized and applied on a large scale in a production line of a silicon wafer factory.
When the detection method provided by the invention is used for detecting the silicon crystal cavity type primary crystal lattice microdefect, under the vertical irradiation of a spotlight, if the colored light ray with disc-shaped dense lattice distribution at the center of the silicon wafer is reflected, the silicon crystal cavity type primary crystal lattice microdefect at the center of the silicon wafer is shown; if colored light reflection with annular dense lattice distribution is found at the periphery of the silicon wafer, indicating that the periphery of the silicon wafer has hole type primary crystal lattice microdefects; if the center of the silicon wafer and colored light rays distributed along the periphery of the silicon wafer in a disc ring-shaped dense lattice mode are reflected at the same time, the silicon wafer is indicated to have hole type primary crystal lattice microdefects on the whole; if the fog spots are found on the surface of the silicon wafer, the silicon wafer is indicated to have micro-shallow damage defects on the local surface of the silicon wafer; if the whole surface of the silicon wafer has micro-shallow damage defects and generates light diffuse scattering to be seen as fog to naked eyes, the whole silicon wafer has defects; through judgment, the common problem of the silicon polished wafers in the same batch can be obtained, the common problem is analyzed, and the process parameters are adjusted, so that the process production is analyzed and fed back.
In the present invention, the single void defect of the crystal void type primary lattice microdefect exceeds 0.15 μm, for example, 0.15 μm, 0.2 μm, 0.22 μm, 0.25 μm, 0.30 μm, 0.32 μm, 0.35 μm, 0.40 μm, 0.45 μm, 0.50 μm, etc.
In the invention, the single cavity defect of the crystal cavity type primary lattice microdefect can be seen by human eyes only when the single cavity defect exceeds 0.15 mu m, and if the single cavity defect is lower than the size, the human eyes cannot distinguish easily.
In the present invention, the color of the light irradiated by the light-collecting light source is white or yellow.
In the invention, the color of the light irradiated by the light-gathering light source is white or yellow, and the light is irradiated on the silicon polishing sheet, so that reflection or scattering is easier to occur, and the test effect is better; if other colors such as red, blue, purple, green and the like are adopted, certain influence is caused on the test result, and the detection result is inaccurate.
In the present invention, the light condensing source is a spotlight.
The invention selects the spotlight, has low cost, is easier to obtain compared with other testing equipment, and is suitable for industrial production.
In the present invention, the spotlight is a halogen lamp, a xenon lamp, or an LED lamp.
In the invention, the halogen lamp is an iodine tungsten lamp or a bromine tungsten lamp.
In the invention, the pre-cleaning is to pre-clean the silicon polished wafer by using a mixed solution of ammonia water, hydrogen peroxide and deionized ultrapure water.
The method cleans the silicon polishing sheet before testing, can remove particles which are not cleaned on the surface of the silicon polishing surface, and then detects the particles, so that the detection error can be reduced, and whether the defects of the silicon polishing sheet are crystal cavity type primary crystal lattice micro defects or polishing fog defects can be accurately judged.
In the present invention, the silicon wafer has a thickness of 100-1000 μm, such as 100 μm, 200 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm, 1000 μm, etc.
In the present invention, the silicon wafer is a polished wafer of silicon.
In the present invention, the detection method includes: in a dark room environment, a spotlight with the illumination intensity of more than 40 kilo and the illumination color of yellow or white is vertically irradiated on a silicon wafer polishing sheet with the thickness of 100-1000 μm and which is cleaned by a mixed solution of ammonia water, hydrogen peroxide and deionized ultrapure water in advance, so that the polishing fog defect or the hollow primary crystal lattice micro defect with the single hollow defect of more than 0.15 μm of the silicon polishing sheet is detected.
Compared with the prior art, the invention has the following beneficial effects:
the detection method provided by the invention is simple and easy to implement and convenient to realize; expensive professional equipment is not needed, and the detection cost is greatly reduced; the detection effect is visual, and the detection can be directly observed by naked eyes; the training cost is low, the effect is quick, and the training can be put into use immediately; can quickly judge whether the silicon wafer has hole type primary crystal lattice micro defects or polishing fog defects, and is suitable for large-scale application of an industrial production line.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
In this embodiment, a method for detecting defects of a silicon polished wafer is provided, where the method includes:
(1) cleaning 100 silicon wafer polishing sheets to be tested by using a mixed solution of ammonia water, hydrogen peroxide and deionized ultrapure water, and drying to obtain the silicon wafer polishing sheets with smooth surfaces;
(2) and (2) in a darkroom environment, placing the silicon wafer polished wafer with the smooth surface obtained in the step (1) on a silicon wafer tray by using a suction pen, adjusting the positions of the silicon wafer and a bromine tungsten lamp to vertically irradiate the silicon wafer surface with the thickness of 300 mu m by using the bromine tungsten lamp with the illumination intensity of 50 kilo and the illumination light color of dark yellow, and then observing by naked eyes to judge whether the silicon polished wafer has defects.
Visually observed: in 100 samples to be detected, 36 polished silicon wafers of 36 silicon wafers have disc-shaped, annular, disc-annular or whole-surface dense lattice distribution colored light reflection, which indicates that 36 polished silicon wafers have crystal cavity type primary crystal lattice microdefects with a single cavity defect exceeding 0.15 mu m; fog spots or fog appear on the local or the whole of 55 silicon wafer polished wafers, which indicates that the 55 silicon wafer polished wafers have polishing fog defects; the remaining 9 pieces of the glass have no colored light reflection, fog and fog spots, which shows that the 9 pieces of the glass have no crystal cavity type primary crystal lattice micro defects and polishing fog defects with the single size of more than 0.15 mu m.
Testing and analyzing the defects with the size of more than 0.15 mu m of 100 same polished wafers by using a scanning electron microscope and a particle detection machine table, and finding that 36 polished wafers have crystal cavity type primary crystal lattice micro defects, 55 polished wafers have polishing fog defects, and 9 polished wafers have no crystal cavity type primary crystal lattice micro defects and polishing fog defects with the size of a single cavity exceeding 0.15 mu m; the relative error of the detection result is 0%, and the detection method is proved to be accurate and reliable.
Example 2
In this embodiment, a method for detecting defects of a silicon polished wafer is provided, where the method includes:
(1) cleaning 100 silicon wafer polishing sheets to be tested by using a mixed solution of ammonia water, hydrogen peroxide and deionized ultrapure water, and drying to obtain the silicon wafer polishing sheets with smooth surfaces;
(2) and (2) in a darkroom environment, placing the silicon wafer polished wafer with the smooth surface obtained in the step (1) on a silicon wafer tray by using a suction pen, adjusting the positions of the silicon wafer and a bromine-tungsten lamp to vertically irradiate the bromine-iodine lamp with illumination of 40 kilo and dark yellow irradiation light color on the surface of the silicon wafer with the thickness of 600 mu m, and then observing by naked eyes to judge whether the silicon polished wafer has defects.
Visually observed: 40 silicon wafer polishing sheets in 100 samples to be detected have disc-shaped, annular, disc-annular or whole-surface dense lattice distribution colored light reflection, which indicates that 40 silicon wafer polishing sheets have crystal cavity type primary crystal lattice microdefects with single cavity defect exceeding 0.15 mu m; fog spots or fog appear on the local part or the whole part of 25 silicon wafer polished wafers, which indicates that the 25 silicon wafer polished wafers have polishing fog defects; the other 35 pieces have no colored light reflection, fog and fog spots, which shows that the 35 pieces have no single crystal cavity type primary crystal lattice micro-defect and polishing fog defect with the size of more than 0.15 mu m.
Testing and analyzing the defects with the size of more than 0.15 mu m of 100 same polished wafers by using a scanning electron microscope and a particle detection machine platform, and finding that 40 polished wafers have crystal cavity type primary crystal lattice micro defects, 25 polished wafers have polishing fog defects, and 35 polished wafers have no crystal cavity type primary crystal lattice micro defects and polishing fog defects with the size of a single cavity exceeding 0.15 mu m; the relative error of the detection result is 0%, and the detection method is proved to be accurate and reliable.
Example 3
In this embodiment, a method for detecting defects of a silicon polished wafer is provided, where the method includes:
(1) cleaning 100 silicon wafer polishing sheets to be tested by using a mixed solution of ammonia water, hydrogen peroxide and deionized ultrapure water, and drying to obtain the silicon wafer polishing sheets with smooth surfaces;
(2) and (2) in a darkroom environment, placing the silicon wafer polished wafer with the smooth surface obtained in the step (1) on a silicon wafer tray by using a suction pen, adjusting the positions of the silicon wafer and a bromine tungsten lamp to enable an LED with the illumination intensity of 60 kilo and white illumination light color to vertically irradiate the surface of the silicon wafer with the thickness of 700 mu m, and then observing by naked eyes to judge whether the silicon polished wafer has defects.
Visually observed: in 100 samples to be detected, 28 polished silicon wafers of 28 silicon wafers have disc-shaped, annular, disc-annular or whole-surface dense lattice distribution colored light reflection, which indicates that 28 polished silicon wafers have crystal cavity type primary crystal lattice microdefects with a single cavity defect exceeding 0.15 mu m; fog spots or fog appear on the local or the whole of 34 silicon wafer polished wafers, which indicates that 34 silicon wafer polished wafers have polishing fog defects; the remaining 38 pieces had no colored light reflection, haze and haze, indicating that the 38 pieces had no single crystal cavity-type primary lattice microdefect and polishing haze defect with a size exceeding 0.15 μm.
Testing and analyzing the defects with the size of more than 0.15 mu m of 100 same polished wafers by using a scanning electron microscope and a particle detection machine platform, and finding that 28 polished wafers have crystal cavity type primary crystal lattice micro defects, 34 polished wafers have polishing fog defects, and 38 polished wafers have no crystal cavity type primary crystal lattice micro defects and polishing fog defects with the size of a single cavity exceeding 0.15 mu m; the relative error of the detection result is 0%, and the detection method is proved to be accurate and reliable.
Example 4
In this embodiment, a method for detecting defects of a silicon polished wafer is provided, where the method includes:
(1) cleaning 100 silicon wafer polishing sheets to be tested by using a mixed solution of ammonia water, hydrogen peroxide and deionized ultrapure water, and drying to obtain the silicon wafer polishing sheets with smooth surfaces;
(2) and (2) in a darkroom environment, placing the silicon wafer polished wafer with the smooth surface obtained in the step (1) on a silicon wafer tray by using a suction pen, adjusting the positions of the silicon wafer and a bromine tungsten lamp to enable an LED with the illumination intensity of 100 kilo and white illumination light color to vertically irradiate the surface of the silicon wafer with the thickness of 1000 mu m, and then observing by naked eyes to judge whether the silicon polished wafer has defects.
Visually observed: in 100 samples to be detected, 22 polished silicon wafers of 22 silicon wafers have disc-shaped, annular, disc-annular or whole-surface dense lattice distribution colored light reflection, which indicates that 22 polished silicon wafers have crystal cavity type primary crystal lattice microdefects with single cavity defect more than 0.15 mu m; fog spots or fog appear on the local part or the whole part of 37 silicon wafer polished wafers, which indicates that 37 silicon wafer polished wafers have polishing fog defects; the remaining 41 pieces of the glass have no colored light reflection, fog and fog spots, which shows that the 41 pieces of the glass have no single crystal cavity type primary crystal lattice micro-defect and polishing fog defect with the size of more than 0.15 mu m.
Testing and analyzing the defects with the size of more than 0.15 mu m of 100 same polished wafers by using a scanning electron microscope and a particle detection machine platform, and finding that 23 polished wafers have crystal cavity type primary crystal lattice microdefects, 37 polished wafers have polishing fog defects, and 40 polished wafers have no crystal cavity type primary crystal lattice microdefects and polishing fog defects with the size of a single cavity exceeding 0.15 mu m; the relative error of the detection result is 1%, and the detection method is proved to be accurate and reliable.
Comparative example 1
The difference from example 1 is only that the illuminance of the bromine-tungsten lamp is 20 ten thousand lux, and the other conditions and the detection method are the same as those of example 1.
The error of the detection result of the comparison example is 50%, which shows that when the illumination of the bromine tungsten lamp is lower than 20 ten thousand lux, the detection result has larger error, the illumination intensity is too low, the small cavity type primary crystal lattice microdefect can not be effectively detected, and the detection result is inaccurate as the COP is less seen when the illumination intensity is lower.
Comparative example 2
The difference from example 1 is only that the tungsten bromide lamp is replaced by an astigmatism lamp, and the other conditions and detection method are the same as those of example 1.
The error of the detection result of the comparison example is 90%, the light source is scattered light, the darkroom environment can be damaged, the stray light is too much, the interference is too large, the light reflection of the target area cannot be seen clearly, and the fact that when the light source is a floodlight shows that the detection result has larger error and the detection result is inaccurate.
Comparative example 3
The difference from example 1 is that the silicon polishing pad was not cleaned before the test, and the other conditions and test method were the same as in example 1.
The error of the test result of this comparative example was 100%, and the silicon polished wafer surface was covered with large particles without cleaning, and COP and haze could not be seen when the surface was completely covered, indicating that the test result had a large error and the test result was inaccurate when the silicon polished wafer was not cleaned before the test.
Comparative example 4
The difference from example 1 is only that the color of the irradiated light is red, not the original dark yellow, and the rest of the conditions and the detection method are the same as those of example 1.
The error of the detection result of the comparative example is 30%, the reflected light of the COP is dark red, and small COP are not clear, which indicates that the color of the irradiated light is red, the detection result has larger error and is inaccurate.
Comparative example 5
The difference from example 1 is only that the color of the irradiated light is blue, not the original dark yellow, and the other conditions and the detection method are the same as those of example 1.
The error of the detection result of the comparative example is 20%, and part of the polished fog reflected light can present light blue fog spots, which shows that the detection result has larger error and inaccurate detection result when the color of the irradiated light is blue.
Comparative example 6
The difference from example 1 is that it is not carried out in a dark room environment, and the rest of the conditions and the detection method are the same as those of example 1.
The comparative example was not tested in a dark room environment, and no test results could be obtained.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (8)
1. A method for detecting defects of a silicon polished wafer, comprising: vertically irradiating a light condensing source on a pre-cleaned silicon polished wafer in a darkroom environment so as to detect the defects of the silicon polished wafer, wherein the illumination of the light condensing source is 40-60 Miller;
the defects of the silicon polished wafer are crystal cavity type primary crystal lattice microdefects; under the vertical irradiation of a spotlight, if the center of the silicon wafer is reflected by colored light rays distributed in a disc-shaped dense lattice manner, the center of the silicon wafer is indicated to have hole-type primary crystal lattice micro-defects; if colored light reflection with annular dense lattice distribution is found at the periphery of the silicon wafer, indicating that the periphery of the silicon wafer has hole type primary crystal lattice microdefects; if the center of the silicon wafer and colored light rays distributed along the periphery of the silicon wafer in a disc ring-shaped dense lattice mode are reflected at the same time, the silicon wafer is indicated to have hole type primary crystal lattice microdefects on the whole;
the single cavity defect of the crystal cavity type primary crystal lattice micro-defect exceeds 0.15 mu m;
the color of the light irradiated by the light condensing source is white or yellow.
2. The detection method according to claim 1, wherein the spotlight source is a spotlight.
3. The detection method according to claim 2, wherein the spotlight is any one of a halogen lamp, a xenon lamp, or an LED lamp.
4. The detection method according to claim 3, wherein the halogen lamp is a tungsten-iodine lamp or a tungsten-bromine lamp.
5. The detection method according to claim 1, wherein the pre-cleaning is performed by pre-cleaning the silicon polished wafer with a mixed solution of ammonia water, hydrogen peroxide and deionized ultra-pure water.
6. The detecting method according to claim 1, wherein the thickness of the silicon wafer is 100-1000 μm.
7. The inspection method according to claim 1, wherein the silicon wafer is a silicon wafer polishing sheet.
8. The detection method according to claim 1, characterized in that it comprises: in a dark room environment, a spotlight with the illumination intensity of more than 40 kilo and the illumination color of yellow or white is vertically irradiated on a silicon wafer polishing sheet with the thickness of 100-1000 μm and which is cleaned by a mixed solution of ammonia water, hydrogen peroxide and deionized ultrapure water in advance, so that the polishing fog defect or the hollow primary crystal lattice micro defect with the single hollow defect of more than 0.15 μm of the silicon polishing sheet is detected.
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| CN109668532B (en) * | 2019-01-25 | 2021-04-13 | 北京航天时代激光导航技术有限责任公司 | Substrate surface detection method and device |
| CN110412055B (en) * | 2019-05-06 | 2021-10-01 | 天津大学 | Lens white fog defect detection method based on multi-light-source dark field illumination |
| CN110676155B (en) * | 2019-09-27 | 2021-12-10 | 上海中欣晶圆半导体科技有限公司 | Method for detecting shallow defects on surface of polished silicon wafer |
| CN112461861B (en) * | 2020-12-09 | 2022-12-30 | 中国电子科技集团公司第四十六研究所 | Method for evaluating surface quality of directly bonded silicon single crystal polished wafer |
| CN113325004B (en) * | 2021-07-07 | 2023-03-31 | 上海超硅半导体股份有限公司 | Method and device for detecting surface defects of semiconductor wafer |
| CN113758641A (en) * | 2021-08-26 | 2021-12-07 | 河北同光晶体有限公司 | Method and device for detecting defects of silicon carbide wafer penetrating pipeline |
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