CN109166936A - 一种高阻AlGaN基光导开关器件及其制备方法 - Google Patents
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Abstract
本专利公布了一种高阻AlGaN基光导开关器件及其制备方法，高阻AlGaN基光导开关器件包括：衬底、SiO2层、阳极1、阳极2、阴极1、阴极2，高阻AlGaN基光导开关器件制备方法包括：制作衬底、制作电极2、制作SiO2层、制作电极1。本发明主要是解决衬底材料生长、电极制作的问题，本发明采用AlGaN衬底，化学气相沉积法形成SiO2层，电极分为两段，本发明提供一种可靠性高、响应更为迅速、性能更为优越的高阻AlGaN基光导开关器件及其制备方法。
Description
技术领域
本发明涉及半导体感光器件技术领域，尤其涉及高阻AlGaN基光导开关器件及其制备方法。
背景技术
光导开关是一种利用半导体电阻随外界条件会发生极大变化的特性，而制作成的固体开关。当其受到光照时其电阻会迅速减小，没有光照的黑暗环境中其电阻又极大，且电阻变化的响应时间又极短，是皮秒甚至亚皮秒量级的。
自1972年S.Jayaraman等人发现，光电半导体收到皮秒两极光脉冲作用时，其做出响应的时间也是皮秒量级起，光导开关便收到人们的普遍关注，不断对其进行研究，并取得了一定的研究成果。
1975年，Auston等人使用Si为材料成功制造出第一代的光导开关，并在此后的一端时间内Si单晶半导体占据了光导开关的主要市场地位，但因其电阻率、载流子寿命、热导率等的影响使其出现了不少缺陷；随着人们对光电开关技术研究的不断加深，第二代半导体出现，其以砷化镓为制作材料，其载流子寿命短、迁移率高，解决了第一代半导体中存在的一些问题；随着各领域应用要求的提高，目前光电开关已进入第三代半导体材料SiC器件的新时代。
目前的光导开关由于其构造简单、性能稳定、电磁等难以干扰、故障率低、响应速度快的优点，受到许多领域的青睐，光导开关在军事、脉冲功率、超快瞬态电子学、医疗、通讯等领域有普遍应用。
随着光导开关技术的不断研究与开发，起初光电开关中存在的载流子寿命、迁移率、电阻率的问题均在第三代半导体材料SiC中得到解决，虽然先有的光电开关技术解决了以往的许多问题，具备许多优点，但其仍存以下缺点：(1)SiC材料本身缺陷和设计不合理使得其未达击穿电压，提前被击穿；(2)大尺寸高质量半绝缘衬底材料生长存在问题；(3)制备低比接触电阻率欧姆电极困难；(4)开关结构对性能存在不良影响。
发明内容
本发明的目的是解决现有光导开关中存在的衬底材料生长、电极制作的问题，提供一种可靠性高、响应更为迅速、性能更为优越的高阻AlGaN基光导开关器件及其制备方法。
本发明所采用的技术方案：一种高阻AlGaN基光导开关器件，包括：衬底、SiO2层、阳极1、阳极2、阴极1、阴极2，所述阳极1和阳极2共同组成光导开关的电极阳极；所述阴极1和阴极2共同组成光导开关的电极阴极；所述衬底由高阻AlGaN材料制备，位于整个器件底部；所述SiO2层位于衬底上方；所述阳极1位于SiO2层上方，与阳极2相连，阳极1对外连接外部线路；所述阳极2介于衬底与SiO2层之间，与阳极1相连，二者共同组成阳极；所述阴极1位于SiO2层上方，与阴极2相连，阴极1对外连接外部线路；所述阴极2介于衬底与SiO2层之间，与阴极1相连，二者共同组成阴极。
本发明的高阻AlGaN基光导开关器件制备方法如下：
制作衬底：衬底所用材料为AlGaN，其制备是在蓝宝石衬底上，通过金属有机化合物化学气相淀积法制成，在1100℃条件下，AlN缓冲层外延出非故意掺杂的Al0.4Ga0.6N，然后利用激光剥离或蚀刻将蓝宝石衬底与其分离，再对AlGaN进行抛光，然后在300℃下快速退火3分钟，最终得到制作所需的AlGaN衬底。
制作电极2：使用光刻制作叉指电极，将阳极2和阴极2通过电子束蒸发和自剥离工艺进行沉淀，再在850℃的条件下，进行30s快速退火，最后形成欧姆接触。
制作SiO2层：为缓和器件表面的闪络效应，利用化学气相沉积法制成SiO2层。
制作电极1：SiO2层制成后，在其表面利用光刻使得阳极2和阴极2的边缘部分能够露出SiO2层的覆盖，再利用光刻和电子蒸发淀积的方法安装阳极1和阴极1。
本发明的有益效果：(1)采用快速退火，优化器件，性能更加优异；(2)结构简单，不易出错，因此可靠性更强；(3)优化了制备工艺，优选制备材料，使得器件电阻变化迅速，响应时间极短。
附图说明
图1是本发明剖面结构示意图。
图2是本发明俯视结构示意图。
图中：1—衬底，2—SiO2层，3—阳极1，4—阳极2，5—阴极1，6—阴极2。
具体实施方式
下面结合附图与具体实例对本发明进行详细说明。
如图1所示，本发明所采用的技术方案：本发明的装置包括：衬底(1)、SiO2层(2)、阳极1(3)、阳极2(4)、阴极1(5)、阴极2(6)，所述阳极1(3)和阳极2(4)共同组成光导开关的电极阳极；所述阴极1(5)和阴极2(6)共同组成光导开关的电极阴极；所述衬底(1)由高阻AlGaN材料制备，位于整个器件底部；所述SiO2层(2)位于衬底(1)上方；所述阳极1(3)位于SiO2层(2)上方，与阳极2(4)相连，所述阳极1(3)对外连接外部线路；所述阳极2(4)介于衬底(1)与SiO2层(2)之间，与阳极1(3)相连，二者共同组成阳极；所述阴极1(5)位于SiO2层(2)上方，与阴极2(6)相连，阴极1(5)对外连接外部线路；所述阴极2(6)介于衬底(1)与SiO2层(2)之间，与阴极1(5)相连，二者共同组成阴极。
一种高阻AlGaN基光导开关器件的制备方法，包括如下步骤：制作衬底(1)：衬底(1)所用材料为AlGaN，其制备是在蓝宝石衬底上，通过改进后的金属有机化合物化学气相淀积法制成，利用高温AlN缓冲层外延出非故意掺杂的Al0.4Ga0.6N，然后利用激光剥离或蚀刻将蓝宝石衬底与其分离，再对AlGaN进行抛光，然后在300℃下快速退火3分钟，最终得到制作所需的AlGaN衬底。
制作电极2：使用光刻制作叉指电极，将阳极2(4)和阴极2(6)通过电子束蒸发和自剥离工艺进行沉淀，再在850℃的高温下进行30s快速退火，最后形成欧姆接触。
制作SiO2层(2)：为缓和器件表面的闪络效应，利用化学气相沉积法形成SiO2层(2)。
制作电极1：SiO2层(2)形成后，在其表面利用光刻使得阳极2(4)和阴极2(6)的边缘部分能够露出SiO2层(2)的覆盖，再利用光刻和电子蒸发淀积的方法安装阳极1(3)和阴极1(5)。
Claims (3)
1.一种高阻AlGaN基光导开关器件，包括：衬底(1)、SiO2层(2)、阳极1(3)、阳极2(4)、阴极1(5)、阴极2(6)；所述阳极1(3)和阳极2(4)共同组成光导开关的电极阳极；所述阴极1(5)和阴极2(6)共同组成光导开关的电极阴极；所述衬底(1)位于整个器件底部；所述SiO2层(2)位于衬底(1)上方；所述阳极1(3)位于SiO2层(2)上方，与阳极2(4)相连，阳极1(3)对外连接外部线路；所述阳极2(4)介于衬底(1)与SiO2层(2)之间，与阳极1(3)相连，二者共同组成阳极；所述阴极1(5)位于SiO2层(2)上方，与阴极2(6)相连，阴极1(5)对外连接外部线路；所述阴极2(6)介于衬底(1)与SiO2层(2)之间，与阴极1(5)相连，二者共同组成阴极。
2.根据权利要求1所述的一种高阻AlGaN基光导开关器件，其特征在于：所述衬底(1)由高阻AlGaN材料制成。
3.一种高阻AlGaN基光导开关器件制备方法，其特征在于：
制作衬底(1)：衬底(1)所用材料为AlGaN，其制备是在蓝宝石衬底上，通过金属有机化合物化学气相淀积法制成，利用高温AlN缓冲层外延出非故意掺杂的Al0.4Ga0.6N，然后利用激光剥离或蚀刻将蓝宝石衬底与其分离，再对AlGaN进行抛光，然后在300℃下快速退火3分钟，最终得到制作所需的AlGaN衬底；
制作电极2：使用光刻定义插指电极，将阳极2(4)和阴极2(6)通过电子束蒸发和自剥离工艺进行沉淀，再在850℃的高温下进行30s快速退火，最后形成欧姆接触；
制作SiO2层(2)：利用化学气相沉积法形成SiO2层(2)；
制作电极1：SiO2层(2)形成后，在其表面利用光刻的方法使阳极2(4)和阴极2(6)的边缘部分暴露出来，再利用光刻和电子蒸发淀积的方法安装阳极1(3)和阴极1(5)。
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| CN103904112A (zh) * | 2014-01-20 | 2014-07-02 | 西安电子科技大学 | 耗尽型绝缘栅AlGaN/GaN器件结构及其制作方法 |
| US20180053872A1 (en) * | 2014-12-02 | 2018-02-22 | Gwangju Institute Of Science And Technology | Photoconductive semiconductor switch and method for manufacturing the same |
| US20160276518A1 (en) * | 2015-03-20 | 2016-09-22 | Xi'an University Of Technology | Insulated-gate photoconductive semiconductor switch |
| CN105679838A (zh) * | 2016-01-11 | 2016-06-15 | 西安电子科技大学 | 基于AlGaN/GaN异质结多沟道结构的太赫兹肖特基二极管及制作方法 |
| CN107799624A (zh) * | 2017-09-08 | 2018-03-13 | 大连民族大学 | 一种基于纳米NiO/AlGaN异质结构的倒置式快速紫外光响应器件及制备方法 |
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