CN109148657B - GaN-based ultraviolet LED epitaxial wafer on Si substrate and preparation method thereof - Google Patents

GaN-based ultraviolet LED epitaxial wafer on Si substrate and preparation method thereof Download PDF

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CN109148657B
CN109148657B CN201810764177.7A CN201810764177A CN109148657B CN 109148657 B CN109148657 B CN 109148657B CN 201810764177 A CN201810764177 A CN 201810764177A CN 109148657 B CN109148657 B CN 109148657B
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李国强
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Heyuan Choicore Photoelectric Technology Co ltd
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Abstract

The invention discloses a GaN-based ultraviolet LED epitaxial wafer on a Si substrate and a preparation method thereof, wherein the ultraviolet LED epitaxial wafer comprises the Si substrate, a GaN buffer layer, an unintended doped GaN layer and an n-type Al layer which are sequentially arranged on the Si substrate from bottom to topxGa1‑xN layer, N-type GaN layer, InxGa1‑xN/GaN superlattice layer, InyGa1‑yN/GaN quantum well layer, EBL layer, p-type AlyGa1‑yAn N layer, a p-type GaN layer; said InxGa1‑xIn the N/GaN superlattice layer, x is 0.20-0.06, and the components are gradually changed; said InyGa1‑yAn N/GaN quantum well layer, y being 0.02-0.08; the n-type AlxGa1‑xN layer and p-type AlyGa1‑yN layers, x ═ y ═ 0.10 to 0.30. The GaN-based ultraviolet LED epitaxial wafer effectively solves the problems of difficult growth and heat accumulation in the working process of a high-quality ultraviolet LED, and can realize the growth and preparation of the high-light-efficiency and high-performance ultraviolet LED epitaxial wafer.

Description

GaN-based ultraviolet LED epitaxial wafer on Si substrate and preparation method thereof
Technical Field
The invention relates to an ultraviolet LED technology, in particular to a GaN-based ultraviolet LED epitaxial wafer on a Si substrate and a preparation method thereof.
Background
Group III nitrides, represented by GaN, have been widely used in optoelectronic devices such as Light Emitting Diodes (LEDs), Laser Diodes (LDs), photodetectors in recent decades due to their excellent material properties, and have become mature in industrialization, being the third generation semiconductor material system that is currently most concerned. The current GaN-based photoelectric device, especially the GaN LED, still mainly focuses on the visible light band for realizing the industrialized light-emitting band, which severely limits the development and application of the GaN LED. The ultraviolet band is a crucial part in the development process of the GaN LED, the application field of the LED can be improved to the fist fields of sewage disinfection, light wave communication and the like from basic illumination by the ultraviolet GaN LED, and the GaN-based third-generation semiconductor material can be greatly promoted to realize photoelectric integration in the true sense as soon as possible.
At present, ultraviolet LEDs are mostly prepared on the basis of AlGaN materials, however, due to the high migration barrier of Al atoms, the growth of AlGaN materials needs high temperature, the control of components in the growth process is difficult, the quality of AlGaN-based quantum wells is poor, the doping is difficult and the like, and the preparation of high-luminous-efficiency ultraviolet LEDs is difficult to realize. In addition, because the energy of light waves in an ultraviolet band is higher than that of light waves in a visible light band, the prepared ultraviolet LED also has the problems of poor performance stability and reliability of the prepared ultraviolet LED device caused by serious heating in the working process and difficulty in realizing large-scale application.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a GaN-based ultraviolet LED epitaxial wafer on a Si substrate. The high-thermal-conductivity Si substrate is adopted to improve the heat dissipation of the device and facilitate the subsequent integrated processing of the device.
The invention also aims to provide a preparation method of the GaN-based ultraviolet LED epitaxial wafer on the Si substrate. According to the preparation method, a GaN material is used as a device structure main body, and the ultraviolet LED with high repeatability is formed by substituting InGaN/GaN with low In component for an AlGaN/AlGaN quantum well structure.
One of the purposes of the invention is realized by adopting the following technical scheme: a GaN-based ultraviolet LED epitaxial wafer on a Si substrate comprises the Si substrate, a GaN buffer layer, an unintentionally doped GaN layer, and an n-type Al layer sequentially arranged from bottom to top on the Si substratexGa1-xN layer, N-type GaN layer, InxGa1-xN/GaN superlattice layer, InyGa1-yN/GaN quantum well layer, EBL layer, p-type AlyGa1-yAn N layer, a p-type GaN layer; said InxGa1-xIn the N/GaN superlattice layer, x is 0.20-0.06, and the components are gradually changed; said InyGa1-yAn N/GaN quantum well layer, y being 0.02-0.08; the n-type AlxGa1-xN layer and p-type AlyGa1-yN layers, x ═ y ═ 0.10 to 0.30.
Further, the thickness of the unintentionally doped GaN layer is 0.9 to 1.5 μm.
Furthermore, the thickness of the n-type GaN layer is 0.3-0.9 μm, the doping substance is Si, and the doping concentration is 5-9 × 1019cm-2。
Further, the n-type AlxGa1-xThe thickness of the N layer is 2.0-2.2 μm, the doping substance is Si, and the doping concentration is 5-9 × 1019cm-2。
Further, the InxGa1-xIn the N/GaN superlattice layerxGa1-xThe thickness of the N layer is equal to that of the GaN layer and is 3-8nm, wherein InxGa1-xThe number of the N/GaN superlattice layer cycles is 6-9.
Further, the InyGa1-yIn the N/GaN quantum well layeryGa1-yThe thickness of N layer is 2-5nm, the thickness of GaN layer is 10-15nm, InyGa1-yThe number of cycles of the N/GaN quantum well layer is 8, the GaN layer in the first 6 cycles is N-type doped, the doping source is Si, and the doping concentration is 2-9 × 1017cm-2The GaN layer of the last 2 cycles is unintentionally doped.
Further, the EBL layer is AlxInyGa(1-x-y)And the thickness of the N layer is 20-60nm, wherein x is 0.1-0.25, and y is 0.03-0.1.
Further, the p-type AlyGa1-yThe N layer comprises MgIn alloy and p-AlyGa1-yN layer of Mgin alloy with thickness of 2-8nm, p-AlyGa1-yThe thickness of the N layer is 80-150nm, the doping substance is Mg, and the doping concentration is 1-6 × 1019cm-2The thickness of the p-type GaN layer is 20-50nm, the doping substance is Mg, and the doping concentration is 1-6 × 1019-8×1021cm-2。
The second purpose of the invention is realized by adopting the following technical scheme: a preparation method of a GaN-based ultraviolet LED epitaxial wafer on a Si substrate sequentially comprises the following steps:
preparing a GaN buffer layer on a Si substrate: depositing an AlN layer and an AlGaN layer on a Si substrate in sequence by adopting a metal organic chemical vapor deposition method to serve as a GaN buffer layer;
preparing an unintended doped GaN layer: introducing trimethyl gallium as a Ga source on the GaN buffer layer by adopting a metallorganic chemical vapor deposition method, and growing an unintended doped GaN layer on the GaN buffer layer;
preparation of n-type AlxGa1-xN-layer step: miningBy metallorganic chemical vapor deposition with SiH4Introducing trimethylaluminum and trimethylgallium as an Al source and a Ga source respectively as doping sources, and growing an n-type AlGaN layer on the unintentionally doped GaN layer; x is 0.10-0.30;
preparing an n-type GaN layer: by means of metallorganic chemical vapor deposition with SiH4Introducing trimethyl gallium as a Ga source as a doping source, and growing an n-type GaN layer on the n-type AlGaN layer;
preparation of InxGa1-xN/GaN superlattice layer step: introducing triethyl gallium as a Ga source and trimethyl indium as an In source by adopting a metallorganic chemical vapor deposition method to grow an InGaN superlattice layer, then introducing triethyl gallium as a Ga source to grow the GaN superlattice layer, and repeatedly growing for 6-9 times, wherein x is 0.20-0.06; (ii) a
Preparation of InyGa1-yAnd (3) an N/GaN quantum well layer step: adopting a metallorganic chemical vapor deposition method, introducing triethyl gallium as a Ga source, InxGa1-xGrowing a GaN barrier layer on the N/GaN superlattice layer, introducing a trimethylindium source as an In source, introducing triethylgallium as a Ga source, and growing In on the GaN well layeryGa1-yThe N well layer is used as a unit period of the quantum well layer, the whole quantum well layer consists of 8 unit periods, and In the last period is grown by using a GaN barrier layer growth original process after the growth is finishedyGa1-yA GaN barrier layer grows on the N layer again; wherein, InyGa1-yThe GaN barrier layers in the first 6 periods of the N/GaN quantum well are doped in an N-type mode, the doping source is Si, and the GaN barrier layers in the last two periods are unintentionally doped GaN layers; y is 0.02-0.08;
preparing an EBL layer: adopting a metallorganic chemical vapor deposition method, introducing trimethyl gallium as a Ga source, introducing trimethyl indium as an In source and introducing trimethyl aluminum as an Al source to grow AlxInyGa(1-x-y)An N EBL layer; wherein x is 0.01-0.25, and y is 0.03-0.1;
preparation of p-type AlyGa1-yN-layer step: adopting a metallorganic chemical vapor deposition method, introducing trimethyl indium as an In source In advance, taking magnesium cyclopentadienyl as an Mg source, and growing M on the EBL layergIn alloy layer, cutting off In source, introducing trimethyl gallium as Ga source and trimethyl aluminum as Al source, and continuously growing p-Al on Mgin alloy layeryGa1-yN layers; y is 0.10-0.30;
preparing a p-type GaN layer: adopting a metallorganic chemical vapor deposition method, introducing trimethyl gallium as a Ga source and magnesium chloride as a Mg source, and growing a p-type GaN layer;
and (3) annealing: by adopting a metallorganic chemical vapor deposition method, all metallorganic sources are cut off to supply pure N2And annealing the whole ultraviolet LED epitaxial structure under the atmosphere.
Further, the preparation method sequentially comprises the following steps:
preparing a GaN buffer layer on the Si substrate: depositing an AlN layer and an AlGaN layer on a Si substrate in sequence by adopting a metal organic chemical vapor deposition method to serve as a GaN buffer layer;
preparing the unintentionally doped GaN layer by performing MOCVD on the GaN buffer layer, 5 × 10-7-8×10-10Introducing trimethyl gallium as a Ga source under the conditions that the Pa back bottom vacuum degree, the cavity temperature are 800-880 ℃, and the reaction chamber pressure is 150-200Torr, and growing an unintended doped GaN layer with the thickness of 0.9-1.5 mu m on the GaN buffer layer;
preparation of n-type AlxGa1-xN-layer step: adopting a metal organic chemical vapor deposition method to increase the reaction temperature to 920-1080 ℃, and using SiH under the condition of the reaction chamber pressure of 150-220Torr4Introducing trimethylaluminum and trimethylgallium as an Al source and a Ga source respectively as doping sources, and growing an n-type AlGaN layer on the unintentionally doped GaN layer; x is 0.10-0.30;
preparing an n-type GaN layer: the temperature of the reaction chamber is reduced to 880 plus 950 ℃ by adopting a metal organic chemical vapor deposition method, and SiH is added under the condition that the pressure of the reaction chamber is 150 plus 220Torr4Introducing trimethyl gallium as a Ga source as a doping source, and growing an n-type GaN layer on the n-type AlGaN layer;
preparation of InxGa1-xN/GaN superlattice layer step: the temperature of the reaction cavity is reduced by adopting a metallorganic chemical vapor deposition methodWhen the temperature reaches 720 plus 770 ℃, the pressure of the reaction chamber is 40-70Torr, triethyl gallium is introduced as a Ga source, trimethyl indium is introduced as an In source, an InGaN superlattice layer grows, the temperature of the reaction chamber is raised to 840 plus 900 ℃, the supply of TMIn (trimethyl indium) is cut off, triethyl gallium is introduced as a Ga source, a GaN superlattice layer grows, and the growth is repeated for 6-9 times, wherein x is 0.20-0.06; (ii) a
Preparation of InyGa1-yAnd (3) an N/GaN quantum well layer step: adopting a metallorganic chemical vapor deposition method, raising the temperature of the reaction cavity to 850-xGa1-xGrowing a GaN barrier layer on the N/GaN superlattice layer, then reducing the temperature of the reaction chamber to 720-class 770 ℃, introducing a trimethyl indium source as an In source, introducing triethyl gallium as a Ga source, and growing In on the GaN well layeryGa1-yThe N well layer is used as a unit period of the quantum well layer, the whole quantum well layer consists of 8 unit periods, and In the last period is grown by using a GaN barrier layer growth original process after the growth is finishedyGa1-yA GaN barrier layer grows on the N layer again; wherein, InyGa1-yThe GaN barrier layer of the first 6 periods of the N/GaN quantum well is doped in an N-type manner, the doping source is Si, and the doping concentration is 2-9 × 1017cm-2The GaN barrier layers in the last two periods are unintentionally doped GaN layers; the thickness of the GaN barrier layer is 10-15nm, InyGa1-yThe thickness of the N well layer is 2-5nm, and y is 0.02-0.08;
preparing an EBL layer: adopting a metallorganic chemical vapor deposition method, raising the temperature of a reaction cavity to 850-xInyGa(1-x-y)An N EBL layer; wherein x is 0.01-0.25, and y is 0.03-0.1;
preparation of p-type AlyGa1-yN-layer step: adopting a metallorganic chemical vapor deposition method, raising the temperature of a reaction cavity to 950-An Al source for continuously growing p-Al on the MgIn alloy layeryGa1-yN layers; wherein the thickness of the MgIn alloy layer is 2-5nm, and the thickness of the MgIn alloy layer is p-AlyGa1-yThe thickness of the N layer is 80-150nm, y is 0.10-0.30, the doping substance is Mg, and the doping concentration is 1-6 × 1019cm-2；
Preparing a p-type GaN layer by adopting a metal organic chemical vapor deposition method, wherein the temperature of a reaction cavity is increased to 920-19-8×1021cm-2Gradually increasing;
and (3) annealing: adopting a metallorganic chemical vapor deposition method, reducing the temperature of the reaction cavity to 500-600 ℃, keeping the pressure of the reaction cavity consistent with the growth pressure of the p-type GaN layer, cutting off the supply of all metallorganic sources, and performing chemical vapor deposition on pure N2And annealing the whole ultraviolet LED epitaxial structure in the atmosphere for 2-8 min.
Compared with the prior art, the invention has the beneficial effects that:
1) the GaN-based ultraviolet LED epitaxial wafer effectively solves the problems of difficult growth and heat accumulation in the working process of a high-quality ultraviolet LED, and can realize the growth and preparation of the high-light-efficiency and high-performance ultraviolet LED epitaxial wafer;
2) compared with the existing sapphire substrate, the Si substrate adopted by the invention is beneficial to reducing the performance loss generated by the work heating of the device, has good compatibility with the existing integrated circuit technology and is beneficial to realizing the photoelectric integration of the device;
3) in the GaN-based ultraviolet LED epitaxial structure, the low InGaN/GaN quantum well is adopted to replace the low Al component AlGaN/GaN quantum well, so that the growth of an ultraviolet UV-C wave band device is realized, and the problems of narrow process window and the like of the ultraviolet device are solved.
4) Before a p-type layer grows, the Mg doping incorporation rate at the position of the p-type layer is improved by utilizing an MgIn insertion layer;
5) according to the invention, the AlGaN/GaN composite n-type and p-type layer structure is utilized to effectively improve the light efficiency of the ultraviolet LED;
6) according to the invention, n-type doping is introduced into the GaN barrier layer in the multilayer quantum well, so that the light efficiency of the ultraviolet LED is effectively improved.
Drawings
Fig. 1 is a schematic structural diagram of a GaN-based ultraviolet LED epitaxial wafer on a Si substrate according to a preferred embodiment of the present invention.
The various reference numbers in the figures: 1. a Si substrate; 2. a GaN buffer layer; 3. unintentionally doping the GaN layer; 4. n type AlxGa1-xN layers; 5. an n-type GaN layer; 6. inxGa1-xAn N/GaN superlattice layer; 7. inyGa1-yAn N/GaN quantum well layer; 8. an EBL layer; 9. p type AlyGa1-yN layers; 10. and a p-type GaN layer.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that any combination of the embodiments or technical features described below can be used to form a new embodiment without conflict.
In the present invention, all parts and percentages are by weight, unless otherwise specified, and the equipment and materials used are commercially available or commonly used in the art. The methods in the following examples are conventional in the art unless otherwise specified.
As shown in figure 1, the GaN-based ultraviolet LED epitaxial wafer on the Si substrate comprises the Si substrate 1, a GaN buffer layer 2, an unintentionally doped GaN layer 3 and n-type Al, which are arranged on the Si substrate from bottom to top in sequencexGa1-xN layer 4, N-type GaN layer 5, InxGa1-xN/GaN superlattice layer 6, InyGa1-yN/GaN quantum well layer 7, EBL layer 8, p-type AlyGa1-yN layer 9, p-type GaN layer 10.
The preparation method sequentially comprises the following steps:
(1) preparing a GaN buffer layer on a Si substrate: depositing an AlN layer and an AlGaN layer on a Si substrate in sequence by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method to serve as a GaN buffer layer;
(2) step of preparing unintentionally doped GaN layer, namely, MOCVD method is adopted to carry out 5 × 10 on GaN buffer layer-7-8×10- 10Introducing TMGa (trimethyl gallium) as a Ga source under the conditions that the Pa back bottom vacuum degree, the cavity temperature are 800-880 ℃, and the reaction chamber pressure is 150-200Torr, and growing an unintended doped GaN layer with the thickness of 0.9-1.5um on the GaN buffer layer;
(3) preparation of n-type AlxGa1-xN-layer step: the MOCVD method is adopted to raise the reaction temperature to 920-1080 ℃, and SiH is used under the condition that the reaction chamber pressure is 150-220Torr4Introducing TMAl (trimethylaluminum) and TMGa (trimethylgallium) as Al source and Ga source as doping source, growing n-type AlGaN layer on the unintentionally doped GaN layer with the thickness of 2.0-2.2um and the doping concentration of 5-9 × 1019cm-2，x＝0.10-0.30；
(4) Preparing an n-type GaN layer: the MOCVD method is adopted to reduce the temperature of the reaction chamber to 880 and 950 ℃, and SiH is used under the condition that the pressure of the reaction chamber is 150 and 220Torr4Introducing TMGa (trimethyl gallium) as a doping source, growing an n-type GaN layer on the n-type AlGaN layer, wherein the thickness of the n-type GaN layer is 0.3-0.9um, and the doping concentration is 5-9 × 1019cm-2；
(5) Preparation of InxGa1-xN/GaN superlattice layer step: adopting MOCVD method, reducing the temperature of the reaction chamber to 770 ℃ for 720-xGa1-xThe thickness of the N layer and the GaN layer are both 3-8nm, InxGa1-xThe In component of the N layer is gradually changed, and x is 0.20-0.06;
(6) preparation of InyGa1-yAnd (3) an N/GaN quantum well layer step: the MOCVD method is adopted, the temperature of the reaction cavity is raised to 850-930 ℃, the pressure of the reaction cavity is 50-120Torr, TEGa (triethyl gallium) is introduced as a Ga source, and InxGa1-xGrowing a GaN barrier layer on the N/GaN superlattice layer, then reducing the temperature of the reaction chamber to 720-770 ℃, introducing a TMIn (trimethyl indium) source as an In source, introducing a TEGa (triethyl gallium) source as a Ga source, and growing In on the GaN well layeryGa1-yN-well layer, using this as quantum well layerOne unit period, the whole quantum well layer consists of 8 unit periods, and after the growth is finished, the In of the last period is grown by using the original growth process of the GaN barrier layeryGa1- yAnd a GaN barrier layer grows on the N layer again. Wherein, InyGa1-yThe GaN barrier layer of the first 6 periods of the N/GaN quantum well is doped in an N-type manner, the doping source is Si, and the doping concentration is 2-9 × 1017cm-2And the GaN barrier layers in the last two periods are unintentionally doped GaN layers. The thickness of the GaN barrier layer is 10-15nm, InyGa1-yThe thickness of the N well layer is 2-5nm, and y is 0.02-0.08;
(7) preparing an EBL layer: adopting MOCVD method, increasing the temperature of the reaction chamber to 850-xInyGa(1-x-y)An N EBL layer, wherein the EBL layer has a thickness of 20to 60nm, x is 0.01 to 0.25, and y is 0.03 to 0.1;
(8) preparation of p-type AlyGa1-yN-layer step: adopting MOCVD method, raising the temperature of the reaction chamber to 950-2Mg (dimocene magnesium) is used as a Mg source, MgIn alloy with the thickness of 2-5nm is grown on the EBL layer, then the In source is cut off, TMGa (trimethyl gallium) is introduced as a Ga source, TMAl (trimethyl aluminum) is used as an Al source, and p-Al is continuously grown on the MgIn alloy layeryGa1-yAnd N layers. Wherein the MgIn alloy has a thickness of 2-5nm and p-AlyGa1-yThe thickness of the N layer is 80-150nm, y is 0.10-0.30, the doping substance is Mg, and the doping concentration is 1-6 × 1019cm-2；
(9) Preparing a p-type GaN layer: adopting MOCVD method, raising the temperature of the reaction cavity to 920-2Mg (magnesium chloride) is used as a Mg source to grow a p-type GaN layer, wherein the thickness of the p-type GaN layer is 20-50nm, the doping substance is Mg, the doping concentration is gradually changed from 1 to 6 × 1019-8×1021cm-2Gradually increasing;
(10) and (3) annealing: by MOCVD method, the temperature of the reaction chamberThe temperature is reduced to 500-600 ℃, the pressure of the reaction cavity is consistent with the growth pressure of the p-type GaN layer, all metal organic matter sources are cut off, and pure N is used2And annealing the whole ultraviolet LED epitaxial structure in the atmosphere for 2-8 min.
Example 1
A GaN-based ultraviolet LED epitaxial wafer on a Si substrate comprises the Si substrate, a GaN buffer layer, an unintentionally doped GaN layer, and an n-type Al layer sequentially arranged from bottom to top on the Si substratexGa1-xN layer, N-type GaN layer, InxGa1-xN/GaN superlattice layer, InyGa1-yN/GaN quantum well layer, EBL layer, p-type AlyGa1-yN layer, p type GaN layer.
The preparation method sequentially comprises the following steps:
(1) preparing a GaN buffer layer on a Si substrate: depositing an AlN layer and an AlGaN layer on a Si substrate in sequence by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method to serve as a GaN buffer layer;
(2) step of preparing unintentionally doped GaN layer, namely, MOCVD method is adopted to carry out 5 × 10 on GaN buffer layer-7Introducing TMGa (trimethyl gallium) as a Ga source under the conditions that the Pa back bottom vacuum degree, the cavity temperature and the reaction chamber pressure are 830 ℃ and growing an unintended doped GaN layer with the thickness of 1.5um on the GaN buffer layer;
(3) preparation of n-type AlxGa1-xN-layer step: by adopting an MOCVD method, the reaction temperature is raised to 1050 ℃, and SiH is added under the condition that the pressure of a reaction chamber is 150Torr4Introducing TMAl (trimethylaluminum) and TMGa as Al source and Ga source as doping source, growing n-type AlGaN layer with thickness of 2.0um and doping concentration of 6 × 10 on the unintentionally doped GaN layer 319cm-2，x＝0.20；
(4) Preparing an n-type GaN layer: the temperature of the reaction chamber is reduced to 930 ℃ by adopting an MOCVD method, and SiH is added under the condition that the pressure of the reaction chamber is 150Torr4As a doping source, TMGa is introduced as a Ga source, and an n-type GaN layer with the thickness of 0.9um and the doping concentration of 9 × 10 is grown on the n-type AlGaN layer 419cm-2；
(5) Preparation of InxGa1-xN/GaN superlattice layer step:reducing the temperature of the reaction chamber to 720 ℃, reducing the pressure of the reaction chamber to 50Torr, introducing TEGa (triethyl gallium) as a Ga source and TMIn (trimethyl indium) as an In source, growing the InGaN superlattice layer, raising the temperature of the reaction chamber to 850 ℃, cutting off the supply of TMIn, introducing TEGa (triethyl gallium) as a Ga source, growing the GaN superlattice layer, and repeatedly growing for 6 times, wherein In is InxGa1-xThe thickness of the N layer and the GaN layer are both 6nm and InxGa1-xThe In component of the N layer is gradually changed, and the x values from the GaN layer to the top are respectively as follows: x is 0.13, 0.10, 0.08;
(6) preparation of InyGa1-yAnd (3) an N/GaN quantum well layer 7 step: the MOCVD method is adopted, the temperature of the reaction cavity is raised to 850 ℃, the pressure of the reaction cavity is 50Torr, TEGa is introduced as a Ga source, and InxGa1-xGrowing a GaN barrier layer on the N/GaN superlattice layer, then reducing the temperature of the reaction chamber to 770 ℃, introducing a TMIn source as an In source, introducing TEGa as a Ga source, and growing In on the GaN well layeryGa1-yThe N well layer is used as a unit period of the quantum well layer, the whole quantum well layer consists of 8 unit periods, and In the last period is grown by using a GaN barrier layer growth original process after the growth is finishedyGa1-yAnd a GaN barrier layer grows on the N layer again. Wherein, InyGa1-yThe GaN barrier layer of the first 6 periods of the N/GaN quantum well is doped in an N-type manner, the doping source is Si, and the doping concentration is 7 × 1017cm-2And the GaN barrier layers in the last two periods are unintentionally doped GaN layers. The thickness of the GaN barrier layer is 12nm, InyGa1-yThe thickness of the N well layer is 2.5nm, and y is 0.06;
(7) preparing an EBL layer: adopting MOCVD method, heating the temperature of the reaction cavity to 930 ℃, controlling the pressure of the reaction cavity at 50Torr, introducing TMGa as Ga source, TMIn as In source and TMAl as Al source, and growing AlxInyGa(1-x-y)An N EBL layer, wherein the EBL layer has a thickness of 30nm, x is 0.01, and y is 0.05;
(8) preparation of p-type AlyGa1-yN-layer step: adopting MOCVD method, raising the temperature of the reaction cavity to 1050 ℃, controlling the pressure of the reaction cavity to 50Torr, introducing TMIn as an In source In advance, and Cp2Mg is used as a Mg source, Mgin alloy with the thickness of 3nm is grown on the EBL layer,cutting off the In source, introducing TMGa as Ga source and TMAl as Al source, and continuously growing p-Al on the MgIn alloy layeryGa1- yAnd N layers. Wherein the thickness of the MgIn (magnesium metallocene) alloy is 3nm, and the p-Al alloyyGa1-yThe thickness of the N layer is 150nm, y is 0.20, the doping substance is Mg, and the doping concentration is 4 × 1019cm-2；
(9) Preparing a p-type GaN layer: adopting MOCVD method, raising the temperature of the reaction cavity to 950 ℃, controlling the pressure of the reaction cavity to be 50Torr, and introducing TMGa as Ga source and Cp2Mg is used as an Mg source to grow a p-type GaN layer, wherein the thickness of the p-type GaN layer is 50nm, the doping substance is Mg, the doping concentration is gradually changed from 6 × 1019-3×1021cm-2Gradually increasing;
(10) and (3) annealing: the MOCVD method is adopted, the temperature of the reaction cavity is reduced to 500 ℃, the pressure of the reaction cavity is consistent with the growth pressure of the p-type GaN layer, all metal organic matter sources are cut off, and pure N is used2And annealing the whole ultraviolet LED epitaxial structure in the atmosphere for 5 min.
Example 2
A GaN-based ultraviolet LED epitaxial wafer on a Si substrate comprises the Si substrate, a GaN buffer layer, an unintentionally doped GaN layer, and an n-type Al layer sequentially arranged from bottom to top on the Si substratexGa1-xN layer, N-type GaN layer, InxGa1-xN/GaN superlattice layer, InyGa1-yN/GaN quantum well layer, EBL layer, p-type AlyGa1-yN layer, p type GaN layer.
The preparation method sequentially comprises the following steps:
(1) preparing a GaN buffer layer on a Si substrate: depositing an AlN layer and an AlGaN layer on a Si substrate in sequence by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method to serve as a GaN buffer layer;
(2) step of preparing unintentionally doped GaN layer, namely, MOCVD method is adopted to carry out 5 × 10 on GaN buffer layer-7Introducing TMGa (trimethyl gallium) as a Ga source under the conditions that the Pa back bottom vacuum degree, the cavity temperature and the reaction chamber pressure are 800 ℃ and 150Torr, and growing an unintended doped GaN layer with the thickness of 0.9um on the GaN buffer layer;
(3) preparation of nType AlxGa1-xN-layer step: the reaction temperature is increased to 920 ℃ by adopting an MOCVD method, and SiH is added under the condition that the pressure of a reaction chamber is 150Torr4Introducing TMAl (trimethylaluminum) and TMGa (trimethylgallium) as Al source and Ga source as doping sources, and growing an n-type AlGaN layer with the thickness of 2.0um and the doping concentration of 5 × 10 on the unintentionally doped GaN layer19cm-2，x＝0.10；
(4) Preparing an n-type GaN layer: the temperature of the reaction chamber is reduced to 880 ℃ and 950 ℃ by adopting an MOCVD method, and SiH is used under the condition that the pressure of the reaction chamber is 150Torr4Introducing TMGa (trimethyl gallium) as a Ga source as a doping source, and growing an n-type GaN layer on the n-type AlGaN layer, wherein the thickness of the n-type GaN layer is 0.3um, and the doping concentration is 5 × 1019cm-2；
(5) Preparation of InxGa1-xN/GaN superlattice layer step: reducing the temperature of the reaction chamber to 720 ℃, reducing the pressure of the reaction chamber to 40Torr by adopting an MOCVD method, introducing TEGa (triethyl gallium) as a Ga source and TMIn (trimethyl indium) as an In source, growing the InGaN superlattice layer, raising the temperature of the reaction chamber to 840 ℃, cutting off the supply of the TMIn (trimethyl indium), introducing TEGa (triethyl gallium) as a Ga source, growing the GaN superlattice layer, and repeatedly growing for 6 times, wherein In is InxGa1-xThe thickness of the N layer and the GaN layer are both 3nm and InxGa1-xThe In component of the N layer is gradually changed, and the x values from the GaN layer to the top are respectively as follows: x is 0.06, 0.10, 0.18;
(6) preparation of InyGa1-yAnd (3) an N/GaN quantum well layer step: the MOCVD method is adopted, the temperature of the reaction cavity is raised to 850 ℃, the pressure of the reaction cavity is 50Torr, TEGa (triethyl gallium) is introduced as a Ga source, and InxGa1-xGrowing a GaN barrier layer on the N/GaN superlattice layer, then reducing the temperature of the reaction chamber to 720 ℃, introducing a TMIn (trimethyl indium) source as an In source, introducing a TEGa (triethyl gallium) as a Ga source, and growing In on the GaN well layeryGa1-yThe N well layer is used as a unit period of the quantum well layer, the whole quantum well layer consists of 8 unit periods, and In the last period is grown by using a GaN barrier layer growth original process after the growth is finishedyGa1-yAnd a GaN barrier layer grows on the N layer again. Wherein, InyGa1-yAmount of N/GaNThe GaN barrier layer in the first 6 periods of the sub-well is doped in an n type, the doping source is Si, and the doping concentration is 2 × 1017cm-2And the GaN barrier layers in the last two periods are unintentionally doped GaN layers. The thickness of the GaN barrier layer is 10nm, InyGa1-yThe thickness of the N well layer is 2nm, and y is 0.02;
(7) preparing an EBL layer: adopting MOCVD method, raising the temperature of the reaction chamber to 850-xInyGa(1-x-y)An N EBL layer, wherein the EBL layer has a thickness of 20nm, x is 0.01, and y is 0.03;
(8) preparation of p-type AlyGa1-yN-layer step: adopting MOCVD method, raising the temperature of the reaction cavity to 950 ℃, controlling the pressure of the reaction cavity at 50Torr, introducing TMIn (trimethyl indium) as an In source In advance, and Cp2Mg (dimocene magnesium) is used as a Mg source, MgIn alloy with the thickness of 2nm is grown on the EBL layer, then the In source is cut off, TMGa (trimethyl gallium) is introduced as a Ga source, TMAl (trimethyl aluminum) is used as an Al source, and p-Al is continuously grown on the MgIn alloy layeryGa1-yAnd N layers. Wherein the MgIn alloy has a thickness of 2nm and p-AlyGa1-yThe thickness of the N layer is 80nm, y is 0.10, the doping substance is Mg, and the doping concentration is 1 × 1019cm-2；
(9) Preparing a p-type GaN layer: adopting MOCVD method, raising the temperature of the reaction cavity to 920-2Mg (magnesium chloride) is used as a Mg source to grow a p-type GaN layer, wherein the thickness of the p-type GaN layer is 20nm, the doping substance is Mg, the doping concentration is gradually changed from 1 × 1019-8×1021cm-2Gradually increasing;
(10) and (3) annealing: the MOCVD method is adopted, the temperature of the reaction cavity is reduced to 500 ℃, the pressure of the reaction cavity is consistent with the growth pressure of the p-type GaN layer, all metal organic matter sources are cut off, and pure N is used2And annealing the whole ultraviolet LED epitaxial structure in the atmosphere for 2 min.
Example 3
GaN-based ultraviolet on Si substrateThe LED epitaxial wafer comprises a Si substrate, a GaN buffer layer, an unintentionally doped GaN layer and n-type Al, wherein the GaN buffer layer, the unintentionally doped GaN layer and the n-type Al are sequentially arranged on the Si substrate from bottom to topxGa1-xN layer, N-type GaN layer, InxGa1-xN/GaN superlattice layer, InyGa1-yN/GaN quantum well layer, EBL layer, p-type AlyGa1-yN layer, p type GaN layer.
The preparation method sequentially comprises the following steps:
(1) preparing a GaN buffer layer on a Si substrate: depositing an AlN layer and an AlGaN layer on a Si substrate in sequence by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method to serve as a GaN buffer layer;
(2) step of preparing unintentionally doped GaN layer, namely, using MOCVD method to form 8 × 10 on GaN buffer layer-10Introducing TMGa (trimethyl gallium) as a Ga source under the conditions that the Pa back bottom vacuum degree, the cavity temperature and the reaction chamber pressure are 880 ℃ and growing an unintended doped GaN layer on the GaN buffer layer, wherein the thickness of the unintended doped GaN layer is 1.5 mu m;
(3) preparation of n-type AlxGa1-xN-layer step: the reaction temperature is raised to 1080 ℃ by adopting an MOCVD method, and SiH is added under the condition that the pressure of a reaction chamber is 220Torr4Introducing TMAl (trimethylaluminum) and TMGa (trimethylgallium) as Al source and Ga source as doping sources, and growing an n-type AlGaN layer with the thickness of 2.2um and the doping concentration of 9 × 10 on the unintentionally doped GaN layer19cm-2，x＝0.30；
(4) Preparing an n-type GaN layer: the temperature of the reaction chamber is reduced to 880 ℃ and 950 ℃ by adopting an MOCVD method, and SiH is added under the condition that the pressure of the reaction chamber is 220Torr4Introducing TMGa (trimethyl gallium) as a Ga source as a doping source, and growing an n-type GaN layer on the n-type AlGaN layer, wherein the thickness of the n-type GaN layer is 0.9um, and the doping concentration is 9 × 1019cm-2；
(5) Preparation of InxGa1-xN/GaN superlattice layer step: adopting MOCVD method, reducing the temperature of the reaction chamber to 770 ℃, the pressure of the reaction chamber to 70Torr, introducing TEGa (triethyl gallium) as Ga source and TMIn (trimethyl indium) as In source, growing InGaN superlattice layer, raising the temperature of the reaction chamber to 900 ℃, cutting off the supply of TMIn (trimethyl indium), introducing TEGa (triethyl gallium) as Ga source, growing GaN superlattice layerA lattice layer repeatedly grown 9 times, InxGa1-xThe thickness of the N layer and the GaN layer are both 8nm and InxGa1-xThe In component of the N layer is gradually changed, and the x values from the GaN layer to the top are respectively as follows: x is 0.08, 0.10, 0.12, 0.15, 0.2;
(6) preparation of InyGa1-yAnd (3) an N/GaN quantum well layer step: adopting MOCVD method, heating the reaction chamber to 930 deg.C, making the pressure of the reaction chamber 120Torr, introducing TEGa (triethyl gallium) as Ga source, and introducing InxGa1-xGrowing a GaN barrier layer on the N/GaN superlattice layer, then reducing the temperature of the reaction chamber to 770 ℃, introducing a TMIn (trimethyl indium) source as an In source, introducing a TEGa (triethyl gallium) as a Ga source, and growing In on the GaN well layeryGa1-yThe N well layer is used as a unit period of the quantum well layer, the whole quantum well layer consists of 8 unit periods, and In the last period is grown by using a GaN barrier layer growth original process after the growth is finishedyGa1-yAnd a GaN barrier layer grows on the N layer again. Wherein, InyGa1-yThe GaN barrier layer of the first 6 periods of the N/GaN quantum well is doped in an N-type manner, the doping source is Si, and the doping concentration is 9 × 1017cm-2And the GaN barrier layers in the last two periods are unintentionally doped GaN layers. The thickness of the GaN barrier layer is 15nm, InyGa1-yThe thickness of the N well layer is 5nm, and y is 0.08;
(7) preparing an EBL layer: adopting MOCVD method, heating the temperature of the reaction cavity to 930 ℃, controlling the pressure of the reaction cavity at 150Torr, introducing TMGa (trimethyl gallium) as Ga source, TMIn (trimethyl indium) as In source and TMAl (trimethyl aluminum) as Al source, and growing AlxInyGa(1-x-y)An N EBL layer, wherein the EBL layer has a thickness of 60nm, x is 0.25, and y is 0.1;
(8) preparation of p-type AlyGa1-yN-layer step: adopting MOCVD method, raising the temperature of the reaction chamber to 1050 deg.C, controlling the pressure of the reaction chamber at 150Torr, introducing TMIn (trimethyl indium) as In source In advance, Cp2Mg (dimocene magnesium) is used as a Mg source, MgIn alloy with the thickness of 5nm is grown on the EBL layer, then the In source is cut off, TMGa (trimethyl gallium) is introduced as a Ga source, TMAl (trimethyl aluminum) is used as an Al source, and p-Al is continuously grown on the MgIn alloy layeryGa1-yAnd N layers. Wherein the MgIn alloy has a thickness of 5nm and p-AlyGa1-yThe thickness of the N layer is 150nm, y is 0.30, the doping substance is Mg, and the doping concentration is 6 × 1019cm-2；
(9) Preparing a p-type GaN layer: adopting MOCVD method, raising the temperature of the reaction cavity to 920-2Mg (magnesium chloride) is used as a Mg source to grow a p-type GaN layer, wherein the thickness of the p-type GaN layer is 50nm, the doping substance is Mg, the doping concentration is gradually changed from 6 × 1019-8×1021cm-2Gradually increasing;
(10) and (3) annealing: the MOCVD method is adopted, the temperature of the reaction cavity is reduced to 600 ℃, the pressure of the reaction cavity is consistent with the growth pressure of the p-type GaN layer, all metal organic matter sources are cut off, and pure N is used2And annealing the whole ultraviolet LED epitaxial structure in the atmosphere for 8 min.
Example 4
A GaN-based ultraviolet LED epitaxial wafer on a Si substrate comprises the Si substrate, a GaN buffer layer, an unintentionally doped GaN layer, and an n-type Al layer sequentially arranged from bottom to top on the Si substratexGa1-xN layer, N-type GaN layer, InxGa1-xN/GaN superlattice layer, InyGa1-yN/GaN quantum well layer, EBL layer, p-type AlyGa1-yN layer, p type GaN layer.
The preparation method sequentially comprises the following steps:
(1) preparing a GaN buffer layer on a Si substrate: depositing an AlN layer and an AlGaN layer on a Si substrate in sequence by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method to serve as a GaN buffer layer;
(2) step of preparing unintentionally doped GaN layer, namely, using MOCVD method to prepare 7 × 10 on GaN buffer layer-10Introducing TMGa (trimethyl gallium) as a Ga source under the conditions that the Pa back bottom vacuum degree, the cavity temperature and the reaction chamber pressure are 850 ℃ and growing an unintended doped GaN layer with the thickness of 1.2um on the GaN buffer layer;
(3) preparation of n-type AlxGa1-xN-layer step: the reaction strength temperature is raised to 1000 ℃ by adopting an MOCVD method, and the pressure of a reaction chamber is increasedSiH under 180Torr4Introducing TMAl (trimethylaluminum) and TMGa (trimethylgallium) as Al source and Ga source as doping sources, and growing an n-type AlGaN layer with the thickness of 2.1um and the doping concentration of 8 × 10 on the unintentionally doped GaN layer19cm-2，x＝0.20；
(4) Preparing an n-type GaN layer: the temperature of the reaction chamber is reduced to 920 ℃ by adopting an MOCVD method, and SiH is added under the condition that the pressure of the reaction chamber is 190Torr4Introducing TMGa (trimethyl gallium) as a Ga source as a doping source, and growing an n-type GaN layer on the n-type AlGaN layer, wherein the thickness of the n-type GaN layer is 0.6um, and the doping concentration is 8 × 1019cm-2；
(5) Preparation of InxGa1-xN/GaN superlattice layer step: reducing the temperature of a reaction chamber to 750 ℃, reducing the pressure of the reaction chamber to 60Torr by adopting an MOCVD method, introducing TEGa (triethyl gallium) as a Ga source and TMIn (trimethyl indium) as an In source, growing an InGaN superlattice layer, raising the temperature of the reaction chamber to 880 ℃, cutting off the supply of the TMIn (trimethyl indium), introducing TEGa (triethyl gallium) as a Ga source, growing a GaN superlattice layer, and repeatedly growing for 7 times, wherein In is InxGa1-xThe thickness of the N layer and the GaN layer are both 5nm and InxGa1-xThe In component of the N layer is gradually changed, and the x values from the GaN layer to the top are respectively as follows: x is 0.06, 0.08, 0.11, 0.12, 0.15, 0.2;
(6) preparation of InyGa1-yAnd (3) an N/GaN quantum well layer step: the MOCVD method is adopted, the temperature of the reaction cavity is raised to 900 ℃, the pressure of the reaction cavity is 80Torr, TEGa (triethyl gallium) is introduced as a Ga source, and InxGa1-xGrowing a GaN barrier layer on the N/GaN superlattice layer, then reducing the temperature of the reaction chamber to 750 ℃, introducing a TMIn (trimethyl indium) source as an In source, introducing a TEGa (triethyl gallium) as a Ga source, and growing In on the GaN well layeryGa1-yThe N well layer is used as a unit period of the quantum well layer, the whole quantum well layer consists of 8 unit periods, and In the last period is grown by using a GaN barrier layer growth original process after the growth is finishedyGa1-yAnd a GaN barrier layer grows on the N layer again. Wherein, InyGa1-yThe GaN barrier layer of the first 6 periods of the N/GaN quantum well is doped in an N-type manner, the doping source is Si, and the doping concentration is 5 × 1017cm-2And the GaN barrier layers in the last two periods are unintentionally doped GaN layers. The thickness of the GaN barrier layer is 12nm, InyGa1-yThe thickness of the N well layer is 3nm, and y is 0.05;
(7) preparing an EBL layer: adopting MOCVD method, increasing the temperature of the reaction chamber to 850-xInyGa(1-x-y)An N EBL layer, wherein the EBL layer has a thickness of 40nm, x is 0.15, and y is 0.08;
(8) preparation of p-type AlyGa1-yN-layer step: adopting MOCVD method, raising the temperature of the reaction cavity to 1000 deg.C, controlling the pressure of the reaction cavity at 100Torr, introducing TMIn (trimethyl indium) as In source In advance, Cp2Mg (dimocene magnesium) is used as a Mg source, MgIn alloy with the thickness of 4nm is grown on the EBL layer, then the In source is cut off, TMGa (trimethyl gallium) is introduced as a Ga source, TMAl (trimethyl aluminum) is used as an Al source, and p-Al is continuously grown on the MgIn alloy layeryGa1-yAnd N layers. Wherein the MgIn alloy has a thickness of 4nm and p-AlyGa1-yThe thickness of the N layer is 120nm, y is 0.20, the doping substance is Mg, and the doping concentration is 4 × 1019cm-2；
(9) Preparing a p-type GaN layer: adopting MOCVD method, raising the temperature of the reaction cavity to 960 deg.C, controlling the pressure of the reaction cavity at 100Torr, introducing TMGa (trimethyl gallium) as Ga source, Cp2Mg (magnesium chloride) is used as a Mg source to grow a p-type GaN layer, wherein the thickness of the p-type GaN layer is 35nm, the doping substance is Mg, the doping concentration is gradually changed from 3 × 1019-8×1021cm-2Gradually increasing;
(10) and (3) annealing: the MOCVD method is adopted, the temperature of the reaction cavity is reduced to 550 ℃, the pressure of the reaction cavity is consistent with the growth pressure of the p-type GaN layer, all metal organic matter sources are cut off, and pure N is used2And annealing the whole ultraviolet LED epitaxial structure in the atmosphere for 5 min.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.

Claims (8)

1. A GaN-based ultraviolet LED epitaxial wafer on a Si substrate is characterized by comprising the Si substrate, a GaN buffer layer, an unintentionally doped GaN layer and an n-type Al layer which are sequentially arranged on the Si substrate from bottom to topxGa1-xN layer, N-type GaN layer, InxGa1-xN/GaN superlattice layer, InyGa1-yN/GaN quantum well layer, EBL layer, p-type AlyGa1-yAn N layer, a p-type GaN layer; said InxGa1-xIn the N/GaN superlattice layer, x is 0.20-0.06, and the components are gradually changed; said InyGa1-yAn N/GaN quantum well layer, y being 0.02-0.08; the n-type AlxGa1-xN layer and p-type AlyGa1-yN layers, where x ═ y ═ 0.10-0.30; p type AlyGa1-yThe N layer comprises MgIn alloy and p-AlyGa1-yN layer of Mgin alloy with thickness of 2-8nm, p-AlyGa1-yThe thickness of the N layer is 80-150nm, the doping substance is Mg, and the doping concentration is 1-6 × 1019cm-2The thickness of the p-type GaN layer is 20-50nm, the doping substance is Mg, and the doping concentration is 1-6 × 1019-8×1021cm-2；
The preparation method of the GaN-based ultraviolet LED epitaxial wafer on the Si substrate sequentially comprises the following steps:
preparing a GaN buffer layer on a Si substrate: depositing an AlN layer and an AlGaN layer on a Si substrate in sequence by adopting a metal organic chemical vapor deposition method to serve as a GaN buffer layer;
preparing an unintended doped GaN layer: introducing trimethyl gallium as a Ga source on the GaN buffer layer by adopting a metal organic chemical vapor deposition method, and growing an unintended doped GaN layer on the GaN buffer layer;
preparation of n-type AlxGa1-xN-layer step: using metal organic chemical vapor deposition method with SiH4Introducing trimethylaluminum and trimethylgallium as an Al source and a Ga source respectively as doping sources, and growing an n-type AlGaN layer on the unintentionally doped GaN layer; x is 0.10-0.30;
preparing an n-type GaN layer: by using metallorganicsChemical vapor deposition method with SiH4Introducing trimethyl gallium as a Ga source as a doping source, and growing an n-type GaN layer on the n-type AlGaN layer;
preparation of InxGa1-xN/GaN superlattice layer step: introducing triethyl gallium as a Ga source and trimethyl indium as an In source by adopting a metal organic chemical vapor deposition method to grow an InGaN superlattice layer, then introducing triethyl gallium as a Ga source to grow the GaN superlattice layer, and repeatedly growing for 6-9 times, wherein x is 0.20-0.06;
preparation of InyGa1-yAnd (3) an N/GaN quantum well layer step: adopting a metal organic chemical vapor deposition method, introducing triethyl gallium as a Ga source, InxGa1-xGrowing a GaN barrier layer on the N/GaN superlattice layer, introducing a trimethylindium source as an In source, introducing triethylgallium as a Ga source, and growing In on the GaN well layeryGa1-yThe N well layer is used as a unit period of the quantum well layer, the whole quantum well layer consists of 8 unit periods, and In the last period is grown by using a GaN barrier layer growth original process after the growth is finishedyGa1-yA GaN barrier layer grows on the N layer again; wherein, InyGa1-yThe GaN barrier layers in the first 6 periods of the N/GaN quantum well are doped in an N-type mode, the doping source is Si, and the GaN barrier layers in the last two periods are unintentionally doped GaN layers; y is 0.02-0.08;
preparing an EBL layer: adopting a metal organic chemical vapor deposition method, introducing trimethyl gallium as a Ga source, introducing trimethyl indium as an In source and introducing trimethyl aluminum as an Al source, and growing AlxInyGa(1-x-y)An N EBL layer; wherein x is 0.01-0.25, and y is 0.03-0.1;
preparation of p-type AlyGa1-yN-layer step: adopting a metal organic chemical vapor deposition method, introducing trimethyl indium as an In source In advance, using cyclopentadienyl magnesium as an Mg source, growing an MgIn alloy layer on the EBL layer, cutting off the In source, introducing trimethyl gallium as a Ga source, using trimethyl aluminum as an Al source, and continuously growing p-Al on the MgIn alloy layeryGa1-yN layers; y is 0.10-0.30;
preparing a p-type GaN layer: adopting a metal organic chemical vapor deposition method, introducing trimethyl gallium as a Ga source and magnesium chloride as a Mg source, and growing a p-type GaN layer;
and (3) annealing: by adopting a metal organic chemical vapor deposition method, all metal organic sources are cut off from supply, and pure N is used2And annealing the whole ultraviolet LED epitaxial structure under the atmosphere.
2. The GaN-based ultraviolet LED epitaxial wafer on a Si substrate according to claim 1, wherein the thickness of the unintentionally doped GaN layer is 0.9 to 1.5 μm.
3. The GaN-based ultraviolet LED epitaxial wafer on a Si substrate according to claim 1, wherein the n-type GaN layer has a thickness of 0.3 to 0.9 μm, the dopant is Si, and the doping concentration is 5 to 9 × 1019cm-2。
4. The GaN-based ultraviolet LED epitaxial wafer on a Si substrate as claimed in claim 1, wherein the n-type Al isxGa1-xThe thickness of the N layer is 2.0-2.2 μm, the doping substance is Si, and the doping concentration is 5-9 × 1019cm-2。
5. The GaN-based ultraviolet LED epitaxial wafer on a Si substrate according to claim 1, wherein the In isxGa1-xIn the N/GaN superlattice layerxGa1-xThe thickness of the N layer is equal to that of the GaN layer and is 3-8nm, wherein InxGa1-xThe number of the N/GaN superlattice layer cycles is 6-9.
6. The GaN-based ultraviolet LED epitaxial wafer on a Si substrate according to claim 1, wherein the In isyGa1-yIn the N/GaN quantum well layeryGa1-yThe thickness of N layer is 2-5nm, the thickness of GaN layer is 10-15nm, InyGa1-yThe number of cycles of the N/GaN quantum well layer is 8, the GaN layer in the first 6 cycles is N-type doped, the doping source is Si, and the doping concentration is 2-9 × 1017cm-2The GaN layer of the last 2 cycles is unintentionally doped.
7. The GaN-based ultraviolet LED epitaxial wafer on the Si substrate according to claim 1, wherein the EBL layer is AlxInyGa(1-x-y)And the thickness of the N layer is 20-60nm, wherein x is 0.1-0.25, and y is 0.03-0.1.
8. The GaN-based ultraviolet LED epitaxial wafer on the Si substrate according to claim 1, wherein the preparation method sequentially comprises:
preparing a GaN buffer layer on the Si substrate: depositing an AlN layer and an AlGaN layer on a Si substrate in sequence by adopting a metal organic chemical vapor deposition method to serve as a GaN buffer layer;
preparing an unintentionally doped GaN layer by performing metal organic chemical vapor deposition on the GaN buffer layer, 5 × 10-7-8×10-10Introducing trimethyl gallium as a Ga source under the conditions that the Pa back bottom vacuum degree, the cavity temperature are 800-880 ℃, and the reaction chamber pressure is 150-200Torr, and growing an unintended doped GaN layer with the thickness of 0.9-1.5 mu m on the GaN buffer layer;
preparation of n-type AlxGa1-xN-layer step: adopting a metal organic chemical vapor deposition method to raise the reaction temperature to 920-1080 ℃, and using SiH under the condition of the reaction chamber pressure of 150-220Torr4Introducing trimethylaluminum and trimethylgallium as an Al source and a Ga source respectively as doping sources, and growing an n-type AlGaN layer on the unintentionally doped GaN layer; x is 0.10-0.30;
preparing an n-type GaN layer: the temperature of the reaction chamber is reduced to 880-4Introducing trimethyl gallium as a Ga source as a doping source, and growing an n-type GaN layer on the n-type AlGaN layer;
preparation of InxGa1-xN/GaN superlattice layer step: reducing the temperature of the reaction chamber to 720-770 ℃ by adopting a metal organic chemical vapor deposition method, growing an InGaN superlattice layer by introducing triethyl gallium as a Ga source and trimethyl indium as an In source under the pressure of 40-70Torr, raising the temperature of the reaction chamber to 840-900 ℃, cutting off the supply of TMIn (trimethyl indium), introducing triethyl gallium as a Ga source, growing a GaN superlattice layer,repeating the growth for 6-9 times, wherein x is 0.20-0.06;
preparation of InyGa1-yAnd (3) an N/GaN quantum well layer step: adopting a metal organic chemical vapor deposition method, raising the temperature of the reaction cavity to 850-930 ℃, leading the pressure of the reaction cavity to be 50-120Torr, introducing triethyl gallium as a Ga source, and introducing InxGa1-xGrowing a GaN barrier layer on the N/GaN superlattice layer, then reducing the temperature of the reaction chamber to 720-class 770 ℃, introducing a trimethyl indium source as an In source, introducing triethyl gallium as a Ga source, and growing In on the GaN well layeryGa1-yThe N well layer is used as a unit period of the quantum well layer, the whole quantum well layer consists of 8 unit periods, and In the last period is grown by using a GaN barrier layer growth original process after the growth is finishedyGa1-yA GaN barrier layer grows on the N layer again; wherein, InyGa1-yThe GaN barrier layer of the first 6 periods of the N/GaN quantum well is doped in an N-type manner, the doping source is Si, and the doping concentration is 2-9 × 1017cm-2The GaN barrier layers in the last two periods are unintentionally doped GaN layers; the thickness of the GaN barrier layer is 10-15nm, InyGa1-yThe thickness of the N well layer is 2-5nm, and y is 0.02-0.08;
preparing an EBL layer: adopting a metal organic chemical vapor deposition method, raising the temperature of a reaction cavity to 850-xInyGa(1-x-y)An N EBL layer; wherein x is 0.01-0.25, and y is 0.03-0.1;
preparation of p-type AlyGa1-yN-layer step: adopting a metal organic chemical vapor deposition method, raising the temperature of a reaction cavity to 950-yGa1-yN layers; wherein the thickness of the MgIn alloy layer is 2-5nm, and the p-type AlyGa1-yThe thickness of the N layer is 80-150nm, y is 0.10-0.30, the doping substance is Mg, and the doping concentration is 1-6 × 1019cm-2；
Preparing a p-type GaN layer by adopting a metal organic chemical vapor deposition method, wherein the temperature of a reaction cavity is increased to 920-19-8×1021cm-2Gradually increasing;
and (3) annealing: adopting a metal organic chemical vapor deposition method, reducing the temperature of the reaction cavity to 500-600 ℃, keeping the pressure of the reaction cavity consistent with the growth pressure of the p-type GaN layer, cutting off the supply of all metal organic sources, and performing chemical vapor deposition on pure N2And annealing the whole ultraviolet LED epitaxial structure in the atmosphere for 2-8 min.
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