CN109148563A - The preparation method and Zener diode of Zener diode - Google Patents
The preparation method and Zener diode of Zener diode Download PDFInfo
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- CN109148563A CN109148563A CN201811011769.8A CN201811011769A CN109148563A CN 109148563 A CN109148563 A CN 109148563A CN 201811011769 A CN201811011769 A CN 201811011769A CN 109148563 A CN109148563 A CN 109148563A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 40
- 238000009792 diffusion process Methods 0.000 claims description 154
- 210000000746 body region Anatomy 0.000 claims description 108
- 239000000758 substrate Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 40
- 230000015556 catabolic process Effects 0.000 claims description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 229920005591 polysilicon Polymers 0.000 claims description 25
- 150000002500 ions Chemical class 0.000 claims description 20
- 230000002441 reversible effect Effects 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 93
- 238000010586 diagram Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
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- 239000011241 protective layer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
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- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 239000003574 free electron Substances 0.000 description 1
- 239000003031 high energy carrier Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66098—Breakdown diodes
- H01L29/66106—Zener diodes
Abstract
The preparation method and Zener diode of a kind of Zener diode provided by the invention, by the first doped region and the second doped region that form the different doping types laterally to connect, the Zener diode with lateral pn-junction has been made, when avoiding to form longitudinal pn-junction, the exposure mask and doping step for needing to distinguish in the biggish region of doping depth and other doped regions, greatly reduce the exposure mask cost of Zener diode.
Description
Technical field
The present invention relates to two poles of preparation method and Zener of field of semiconductor manufacture more particularly to a kind of Zener diode
Pipe.
Background technique
Zener diode (Zener diode), and can be referred to as zener diode, what it was utilized is the reverse breakdown shape of pn-junction
When state, i.e. pn-junction reverse breakdown, curent change range is very big, and voltage is basically unchanged, and the voltage maintained at this time is known as puncturing
Voltage (Breakdown Voltage, also referred to as burning voltage), so as to play the role of pressure stabilizing.Zener diode exists
Integrated circuit fields are widely applied, mainly as voltage-stablizer and voltage reference device etc..
In the prior art, the breakdown reverse voltage of Zener diode is usually to be determined by longitudinal pn-junction.That is, it needs to be formed
The area p and the area n of longitudinal lamination are to form pn-junction, therefore, must have the doping depth in a region larger in the area p and the area n, that is, adulterate
Depth is greater than the doping depth of other doped regions, therefore in order to distinguish the big region of the doping depth and other doped regions
It opens, it is necessary to use additional mask plate (mask) and corresponding mask step, which results in the increases of process costs.Therefore mesh
It is preceding to be badly in need of proposing new method to reduce the excessively high masking process cost of existing Zener diode.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation method of Zener diode and Zener diodes, to solve existing skill
The problem for having the Zener diode masking process cost of longitudinal pn-junction excessively high in art.
For this purpose, the invention proposes a kind of preparation methods of Zener diode, comprising:
One substrate is provided, forms a well region in the substrate；
Form different the first doped region and the second doped region of doping type in the well region, the well region, described the
One doped region and second doped region are exposed to the surface of the substrate, and first doped region and second doped region are horizontal
To arrangement and first doped region and second doped region connect, so that first doped region and second doping
The region that connects in area forms the pn-junction of the Zener diode.
Preferably, the forming method of first doped region and second doped region includes:
To form the first body region and the second body region that are spaced apart from each other in the substrate, and to described
One body region and second body region execute thermal diffusion process, expand the Doped ions in the first body region
The first doped diffusion region for being formed and laterally being connected with first body region is dissipated, mixing in second body region is made
Heteroion diffuses to form the second doped diffusion region laterally to connect with second body region；
Wherein, first doped diffusion region and second doped diffusion region laterally connect；The first doping ontology
Area and first doped diffusion region form first doped region, second body region and the second doping diffusion
District's groups are at second doped region.
Preferably, the forming method of first body region and second body region includes:
A body zone hard mask layer, well region described in the body zone hard mask layer covering part are formed on the substrate；
First mask layer of body zone, trap described in the first mask layer of body zone covering part are formed on the substrate
The part in area and the body zone hard mask layer, to utilize exposure in first mask layer of body zone and body zone hard mask layer
The opening of the well region forms first body region as the first doping opening out；
Second mask layer of body zone, trap described in the second mask layer of body zone covering part are formed on the substrate
The part in area and the body zone hard mask layer, to utilize exposure in second mask layer of body zone and body zone hard mask layer
The opening of the well region forms second body region as the second doping opening out；Wherein,
Institute of the body zone hard mask layer between first body region and second body region
It states above well region.
Preferably, the body zone hard mask layer is also used to define first doped diffusion region being subsequently formed simultaneously
The sum of with the lateral length of the second doped diffusion region, by controlling the size of the body zone hard mask layer to control the transverse direction
The sum of length realizes the adjustment to the breakdown reverse voltage of the Zener diode；
Wherein, the sum of described lateral length is that first doped diffusion region and second doped diffusion region are transversely expanded
Dissipate the sum of the length on direction.
Preferably, the forming method of the body zone hard mask layer includes:
Form a polysilicon gate；
Side wall is formed in the polysilicon gate two sides, it is hard that the polysilicon gate and the side wall collectively form the body zone
Mask layer.
Preferably, after forming the polysilicon gate, and before forming the side wall, further includes:
Using the polysilicon gate as lightly doped district hard mask layer, trap described in the lightly doped district hard mask layer covering part
Area；
First mask layer of lightly doped district, the first mask layer of lightly doped district covering part institute are formed on the substrate
The part of well region and the lightly doped district hard mask layer is stated, to cover firmly using first mask layer of lightly doped district and lightly doped district
Opening is lightly doped as first in the opening that the well region is exposed in film layer, forms one first lightly doped district；
Second mask layer of lightly doped district, the second mask layer of lightly doped district covering part institute are formed on the substrate
The part of well region and the lightly doped district hard mask layer is stated, to cover firmly using second mask layer of lightly doped district and lightly doped district
Opening is lightly doped as second in the opening that the well region is exposed in film layer, forms one second lightly doped district.
Preferably, after forming first body region and second body region, described first gently mixes
Miscellaneous area is covered by first body region part, and second lightly doped district is covered by second body region part
Lid；In first lightly doped district and second lightly doped district uncovered part be located at first body region and
Between second body region.
And the present invention also correspondingly proposes a kind of Zener diode, including a substrate, is formed in the substrate
One well region is formed with doping type different the first doped region and the second doped region, the well region, described in the well region
One doped region and second doped region are exposed to the surface of the substrate, and first doped region and second doped region are horizontal
To arrangement and first doped region and second doped region connect, first doped region and second doped region
The region that connects forms the pn-junction of the Zener diode.
Preferably, first doped region includes the first body region and laterally connects with first body region
The first doped diffusion region, second doped region include the second body region and with the second body region transverse direction phase
The second doped diffusion region connect；
Wherein, first doped diffusion region and second doped diffusion region laterally connect, and first doping
The region that connects of diffusion region and second doped diffusion region forms the pn-junction of the Zener diode.
Preferably, first doped diffusion region is diffuseed to form by the Doped ions in first body region, institute
The second doped diffusion region is stated to be diffuseed to form by the Doped ions in second body region.
Preferably, the breakdown reverse voltage of the Zener diode is with mixing in first doped diffusion region and described second
The increase of the sum of the lateral length of miscellaneous diffusion region and increase；Wherein, the sum of described lateral length is first doped diffusion region
With the sum of the length on second doped diffusion region transversely dispersal direction.
Preferably, the sum of the lateral length of first doped diffusion region and second doped diffusion region is less than or equal to
0.4μm。
Preferably, second doped region is annular region, and laterally surrounds first doped region.
The preparation method and Zener diode of a kind of Zener diode provided by the invention are laterally connected not by being formed
With the first doped region and the second doped region of doping type, the Zener diode with lateral pn-junction is made, due to the present invention
In made of be lateral pn-junction, the area GupQu and n may be formed at identical doping depth, so as to avoid longitudinal pn-junction is formed
When, it needs to distinguish the biggish region of doping depth and other regions using additional exposure mask and adulterates step, into
And the present invention greatly reduces the exposure mask cost of Zener diode.Further, the first doped region and second in the present invention is mixed
Miscellaneous area further includes the first doped diffusion region and the second doped diffusion region formed by thermal diffusion process, meanwhile, utilize an ontology
Area's hard mask layer controls the sum of first doped diffusion region and lateral length of the second doped diffusion region, to realize alignment
Receive diode breakdown voltage size control.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of Zener diode in the prior art；
Fig. 2 is the structural schematic diagram of Zener diode in the embodiment of the present invention one；
Fig. 3 is the schematic top plan view of zener diode structure in the embodiment of the present invention one；
Fig. 4 is the flow diagram of the preparation method of Zener diode in the embodiment of the present invention two；
Fig. 5~Fig. 9 is structural schematic diagram of the Zener diode in its preparation process in the embodiment of the present invention two；
Figure 10~Figure 14 is structural schematic diagram of the Zener diode in its preparation process in the embodiment of the present invention three.
Specific embodiment
It holds as stated in the background art, the breakdown voltage of the Zener diode used in the prior art is mainly determined by longitudinal pn-junction
Fixed, Fig. 1 is a kind of structural schematic diagram of Zener diode in the prior art, with reference to Zener diode shown in FIG. 1, the Zener
Diode, which is included in substrate 1, is formed with a well region 2, and there are two the doped regions of longitudinal lamination, such as p+ for formation in the well region 2
Area 3 (p-type heavily doped region) and the area n- 4 (N-shaped lightly doped district), and the area p+ 3 is located at 4 top of the area n-, by the area p+ and
The contact in the area n- forms longitudinal pn-junction structure.Corresponding with the area n- 4, the well region 2 is also N-shaped well region.
It should be noted that above-mentioned heavy doping indicates that the doping concentration of doped region is relatively large, expression doping is lightly doped
The doping concentration in area is relatively small, that is, the doping concentration in the area P+ is greater than the doping concentration in the area n-.
Further, since the doping concentration of well region 2 is very low, if using metal electrode directly from 2 surface extraction electrode of well region,
Very big contact resistance can be then generated, therefore in order to reduce the contact resistance on well region 2 surface and metal electrode, it can select in the trap
Make a reservation for be formed on the position of extraction electrode in area 2 and form the area n+ 5 (N-shaped heavily doped region), and then passes through the biggish n+ of doping concentration
To reduce the contact resistance with the metal electrode, the substrate surface exposes the area p+ 3 and the area n+ 5 in area 5.With
And in order to avoid forming connection between the area p+ 3 and the area n+ 5, and the electric current for influencing the pn-junction in the area p+ 3 and the area n- 4 is logical
Road also has isolation structure 6 between the area p+ 3 and the area n+ 5, the isolation structure 6 for example can be shallow trench isolation
Structure (STI) or carrying out local oxide isolation structure (LOCOS).To pass through the external anode in the area p+, the external cathode in the area n+, conducting
When electric current pass sequentially through (or back through) area p+ 3, the area n- 4, well region 2 and the area n+5 and form conductive path, realize the Zener two
The electrode of pole pipe is drawn.
Therefore, with reference to the Zener diode with longitudinal pn-junction shown in FIG. 1, during forming the area n- 4, due to n-
The doping depth and doping concentration in area 4 (such as other n-type dopings on the area n+ 5 and same chip different from other areas n
Area), therefore need to use an additional mask plate and corresponding exposure mask and doping process to form the area n- 4, result in preparation
The increase of cost.Therefore it is directed to this problem, the invention proposes a kind of new Zener diodes and its preparation process, are covered with saving
Film and preparation cost.
Below in conjunction with the drawings and specific embodiments to a kind of Zener diode proposed by the present invention and preparation method thereof make into
One step is described in detail.According to following explanation, advantages and features of the invention will be become apparent from.It should be noted that attached drawing be all made of it is non-
Often simplified form and non-accurate ratio is used, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Embodiment one
Fig. 2 is the structural schematic diagram of Zener diode in the embodiment of the present invention one, below with reference to shown in Fig. 2, the present embodiment
A kind of Zener diode of middle offer includes a substrate 201, a well region 202 is formed in the substrate 201, in the well region
Doping type different the first doped region 21 and the second doped region 22, the well region 202, first doping are formed in 202
Area 21 and second doped region 22 are exposed to the surface of the substrate 201, first doped region 21 and second doping
Area 22 is transversely arranged and first doped region 21 and second doped region 22 connect, first doped region 21 and described
The region that connects of second doped region 22 forms the pn-junction of the Zener diode.
Specifically, the first doped region 21 described in the present embodiment is different with the doping type of second doped region 22, therefore
In the intersection of the first doped region 21 and the second doped region 22, due to the contact of two kinds of doping types, to be formed with lateral
Pn-junction.The doping type of the first doped region 21 used in the present embodiment is, for example, p-type, the doping type example of the second doped region 22
For example N-shaped.It is then corresponding, it can access positive electrode, the second doping of the N-shaped on the first doped region 21 of the p-type
It can access negative electrode in area 22.It should be noted that the doping type of first doped region 21 and second doped region 22
It can also be respectively N-shaped and p-type, then the electrode of the first doped region 21 access of corresponding N-shaped is cathode, the second doping of p-type
Area 22 is anode.
Further, since the breakdown voltage of the Zener diode in the present embodiment depends on first doped region 21 and described
The lateral pn-junction in the region that connects of the second doped region 22, and the conductive path of lateral pn-junction needs not move through the well region 202, therefore
To the doping type of well region 202, there is no special requirements, and in turn, the well region 202 can also arbitrarily choose N-shaped or p-type.
It is worth noting that the Zener diode in the present embodiment due to formation is lateral pn-junction, therefore there is no longitudinal
The structure in the area p and the area n longitudinal direction lamination in pn-junction during the preparation process, does not need to use an extra mask version with shape in turn
At the pn-junction of longitudinal lamination, concrete reason will be explained in detail in preparation method, not repeated herein.Therefore, the present invention has
Exposure mask cost and preparation cost can be saved by having the Zener diode of lateral pn-junction.
As a preferred option, first doped region 21 includes the first body region 210 and adulterates with described first
The first doped diffusion region 211 that body zone 210 laterally connects, second doped region 22 include 220 He of the second body region
The second doped diffusion region 221 laterally to connect with second body region 220；
Wherein, first doped diffusion region 211 and second doped diffusion region 221 laterally connect, and described the
The region that connects of one doped diffusion region 211 and second doped diffusion region 221 forms the pn-junction of the Zener diode.
And first doped diffusion region 211 is by the Doped ions divergent contour in first body region 210
At second doped diffusion region 221 is diffuseed to form by the Doped ions in second body region 220.
Specifically, the first doped region 21 described in the present embodiment and second doped region 22 are not in a processing step
In directly formed, but be first formed with the first body region 210 and the second body region 220 in substrate 201, then
Diffusion technique is recycled, the first doped diffusion region 211 is diffuseed to form by the first body region 210, by the second body region
220 diffuse to form the second doped diffusion region 221.Therefore it can be by first doped diffusion region 211 and the second doped diffusion region
221 regard the extension of the first body region 210 and the second body region 220 as respectively, to form first by control
The process conditions of doped diffusion region 211 and the second doped diffusion region 221 can control the depletion region and concentration distribution shape of pn-junction
Condition, so as to adjust the breakdown voltage of the Zener diode.
For further, the breakdown reverse voltage of the Zener diode is with first doped diffusion region 211 and institute
It states the increase of the sum of lateral length of the second doped diffusion region 221 and increases；Wherein, the sum of described lateral length is described first
Doped diffusion region 211 and second doped diffusion region 221 transversely the sum of the length on dispersal direction.
First it should be noted that there are two types of possible breakdown situations in zener diode, the first is Zener breakdown, works as pn
When the doping concentration of knot is higher, the width of depletion region is accordingly smaller, and built in field intensity is larger, therefore only applies lesser reversed
Voltage, it will be able to biggish electric field is obtained, so that the covalent bond of neutral atom is destroyed in depletion region, so that valence electron be changed
For free electron, a large amount of carrier is inspired, forms Zener breakdown；Second is avalanche breakdown, when the doping concentration of pn-junction
When lower, additional biggish backward voltage is collided neutral former so that carrier obtains biggish kinetic energy by high energy carriers
Son, to destroy covalent bond and discharge carrier, newly generated carrier can also repeat above situation, and then form carrier
The growth of avalanche type, reverse current increased dramatically, so as to cause avalanche breakdown.It can be seen that the pn-junction depletion region formed
Of different size, the breakdown that will lead to different situations occurs.Zener diode is the nickname of zener diode, not only refers to neat
Receive the zener diode that breakdown is working principle, however, typically, zener diode employed in integrated circuit use compared with
More is the principle of Zener breakdown, to obtain relatively small breakdown voltage.
In the present embodiment, the breakdown mode of the Zener diode is, for example, Zener breakdown.Institute is made using diffusion technique
The Doped ions stated in the first body region 210 and second body region 220 diffuse to form the first doped diffusion region
211 and second doped diffusion region 221, the Doped ions concentration of first doped diffusion region 211 and the second doped diffusion region 221
Distribution will receive the limitation of its lateral diffusion length, that is, first doped diffusion region 211 and second doped diffusion region
221 transversely the sum of length on dispersal direction.In the present embodiment, first doped diffusion region 211 and second doping
Transversely the sum of the length on dispersal direction of diffusion region 221, actually namely refers to the first body region 210 and the second doping
Laterally spaced distance between body zone 220.The reason is that under conditions of the total concentration of Doped ions is constant, adulterate from
The diffusion length of son is longer, and the ion concentration spread is then lower, and then too long diffusion region makes the pn formed after diffusion
The Doped ions concentration for tying two sides is relatively low, while the width of depletion region for also resulting in pn-junction increases.Obviously, when the depletion region
When increase, the built in field intensity in depletion region is just accordingly reduced, required additional when so as to cause realization Zener breakdown
Voltage correspondingly increases.It can be seen that the breakdown reverse voltage of Zener diode described in the present embodiment can be with described first
The increase of the sum of the lateral length of doped diffusion region 211 and second doped diffusion region 221 and increase.And to prevent out
The sum of the existing lateral length is excessive, and causes the Zener diode can not be there is a situation where Zener breakdown, in the present embodiment
The sum of lateral length of first doped diffusion region 211 and second doped diffusion region 221 is less than or equal to 0.4 μm, to protect
Zener diode can work normally in card the present embodiment.
As a preferred option, second doped region is annular region, and laterally surrounds first doped region.
Specifically, the cross-sectional structure of Zener diode in the present embodiment is schematically shown only in Fig. 2, in order to more
Understand the zener diode structure being comprehensively illustrated in the present embodiment, additionally provides Fig. 3 in the present embodiment, Fig. 3 is this hair
The schematic top plan view of zener diode structure in bright embodiment one, it is ring that Fig. 3, which schematically illustrates second doped region 22,
Shape region, and enclose first doped region 21.At this point, due to first doped region 21 and second doped region 22
The region that connects be also an annular region, therefore first doped diffusion region 211 and second doped diffusion region 221 also be ring
Shape region, and then second doped region 22 encloses second doped diffusion region 221, second doped diffusion region 221
First doped diffusion region 211 is enclosed, first doped diffusion region 211 encloses first doped region 21.Due to
The area increase that connects between first doped region 21 and second doped region 22, and then effectively increase the Zener two
The pn-junction cross-sectional area of pole pipe.
Embodiment two
Based on above-mentioned Zener diode, the present invention also provides a kind of preparation method of Zener diode, Fig. 4 is the present invention
The flow diagram of the preparation method of Zener diode in embodiment two；Fig. 5~Fig. 9 is two pole of Zener in the embodiment of the present invention two
Structural schematic diagram of the pipe in its preparation process, below with reference to providing a kind of Zener diode shown in Fig. 4, in the present embodiment
Preparation method.
Step S1 is executed, refering to what is shown in Fig. 5, providing a substrate 201, forms a well region 202 in the substrate；
Specifically, the substrate 201 is, for example, silicon base, the method that well region 202 is formed in the substrate 201 is, for example,
The method of thermal diffusion or ion implanting.In the present embodiment, since the conductive path for the lateral pn-junction being subsequently formed needs not move through
The well region 202, therefore the doping type of the well region 202 is not required.The well region 202 in the present embodiment is, for example,
N trap.
It as a preferred option, further include in the base after forming the well region 202 with reference to shown in Fig. 5 and Fig. 6
A substrate protective layer 204 is formed on bottom 201.
Specifically, since the body zone hard mask layer 203 being subsequently formed can be for example polysilicon layer, in turn, for reality
Existing pattern transfer needs to execute polysilicon layer photoetching and etching work in the forming process of the body zone hard mask layer 203
Skill, therefore very likely substrate 201 can be caused to damage.Therefore, in the present embodiment, the body zone hard mask layer 203 is being formed
Before, it is formed with a substrate protective layer 204 in the substrate 201 also to prevent etching process to damage caused by substrate 201,
The substrate protective layer 204 is such as can be for silicon oxide layer；In addition, when carrying out ion implantation technology, it also can be with described
Substrate protective layer 204 inhibits channelling effect when ion implanting, injects junction depth with effective control.
Step S2 is executed, with reference to shown in Fig. 6~Fig. 9, forms the first different doping of doping type in the well region 202
Area 21 and the second doped region 22, the well region 202, first doped region 21 and second doped region 22 are exposed to the base
The surface at bottom 201, first doped region 21 and second doped region 22 is transversely arranged and 21 He of the first doped region
Second doped region 22 connects, so that first doped region 21 and second doped region 22 connect described in the composition of region
The pn-junction of Zener diode.
As a preferred option, with reference to shown in Fig. 6 to Fig. 9, first doped region 21 and second doped region 22
Forming method includes:
The first body region 210 and the second body region 220 being spaced apart from each other are formed in the substrate 201, and
Thermal diffusion process is executed to first body region 210 and second body region 220, makes the first body region
Doped ions in 210 diffuse to form the first doped diffusion region 211 laterally to connect with first body region 210, make
Doped ions in second body region 220 diffuse to form laterally to connect with second body region 220
Two doped diffusion regions 221；
Wherein, first doped diffusion region 211 and second doped diffusion region 221 laterally connect；Described first mixes
Miscellaneous body zone 210 and first doped diffusion region 211 form first doped region 21, second body region 220
Second doped region 22 is formed with second doped diffusion region 221.
Specifically, by diffusion technique in the present embodiment, so that the first body region 210 and the second body region
Doped ions in 220 both diffuse in the region being spaced apart from each other, and then form first doped diffusion region 211 and the
Two doped diffusion regions 221.By doping concentration, diffusion temperature and the diffusion time in control thermal diffusion process, may be implemented
To connecting for the first doped diffusion region 211 and the second doped diffusion region 221, so that the first doped region 21 and the second doped region
Lateral pn-junction is formed between 22.
It should be noted that carrying out impurity diffusion using diffusion technique, existing longitudinal diffusion also has lateral diffusion,
That is, there is diffusion towards all directions.And in the present embodiment, since the breakdown voltage of the Zener diode is by lateral pn
It is concocted fixed, therefore longitudinal diffusion part has no effect on the Zener diode in the present embodiment, therefore in the attached drawing of the present embodiment not
The region of longitudinal diffusion is shown.Also, the part of horizontal proliferation is also and non-fully as shown in the picture, but there are certain gradients
, that is, longitudinal depth of doped diffusion region is not identical.Typically, as diffusion length is longer, the knot of diffusion region
It is deep then more shallow, and this is related to diffusion technique condition.By being not directed to the actual conditions of diffusion technique in this present embodiment, therefore
Diffusion technique condition is not repeated, is only schematically briefly described with attached drawing herein.
As a preferred option, with reference to shown in Fig. 6 to Fig. 9, first body region 210 and second doping are originally
The forming method in body area 220 includes:
A body zone hard mask layer 203,203 covering part of body zone hard mask layer are formed in the substrate 201
The part well region 202；
First mask layer of body zone 207 is formed in the substrate 201, first mask layer of body zone 207 covers
The part of the part well region 202 and the body zone hard mask layer 203, to utilize 207 He of the first mask layer of body zone
The opening of the well region 202 is exposed in body zone hard mask layer 203 as the first doping opening, forms first doping originally
Body area 210；
Second mask layer of body zone 208 is formed in the substrate 201, second mask layer of body zone 208 covers
The part of the part well region 202 and the body zone hard mask layer 203, to utilize 208 He of the second mask layer of body zone
The opening of the well region 202 is exposed in body zone hard mask layer 203 as the second doping opening, forms second doping originally
Body area 220；Wherein,
The body zone hard mask layer 203 is located at first body region 210 and second body region 220
Between the top of the well region 202.
Specifically, in order to form first doped region 21 and second doped region 22, such as can be to the substrate
Well region 202 in 201 executes ion implantation technology.For this purpose, in the present embodiment, refering to what is shown in Fig. 6, the shape in the substrate 201
At body zone hard mask layer 203, the body zone hard mask layer 203 for example can be polysilicon layer；Then, in the substrate
First mask layer of body zone 207, well region 202 and institute described in 207 covering part of the first mask layer of body zone are formed on 201
State the part of body zone hard mask layer 203, and expose the part well region 202, thus using the opening of the expose portion as
First doping opening, forms first body region 210 for example, by using ion implantation technology；Then, the ontology is removed
The first mask layer of area 207, and second mask layer of body zone 208 is re-formed, 208 covering part of the second mask layer of body zone
The part of the well region 202 and the body zone hard mask layer 203, and the part well region 202 is exposed, thus with the exposure
Partial opening forms second body region 220 for example, by using ion implantation technology as the second doping opening.
It is worth noting that the forming process in first body region 210 and second body region 220
In, the body zone hard mask layer 203 more can accurately define the boundary of first body region 210, Yi Jiding
Close to the boundary of 210 side of the first body region in adopted second body region 220, so as to avoid directly into
Row ion implanting requires photoetching alignment precision excessively high problem, can be realized the effect for reducing scale error.In addition, subsequent
Processing step in, according to specific needs, can choose by the body zone hard mask layer 203 remove or retain.
And although preparing the body zone hard mask layer 203 also can be correspondingly only from the point of view of the step in the present embodiment
Need a mask plate.However, in actual fabrication process, it is same when for example, by using polysilicon as body zone hard mask layer 203
It is indispensable there is also other polysilicon structures (such as polysilicon gate construction) on wafer, therefore the body zone in the present embodiment
Hard mask layer 203 can be formed in same step with other polysilicon structures, thus, it not will increase actually additional
Mask plate and processing step.
As a preferred option, the body zone hard mask layer 203 is also used to define described the be subsequently formed simultaneously
The sum of the lateral length of one doped diffusion region 211 and the second doped diffusion region 221, by controlling the body zone hard mask layer
203 size realizes the adjustment to the breakdown reverse voltage of the Zener diode to control the sum of described lateral length；
Wherein, the sum of described lateral length is first doped diffusion region 211 and 221 edge of the second doped diffusion region
The sum of length on horizontal proliferation direction.
It should explain, the body zone hard mask layer 203 in the present embodiment can not only define described first
Body region 210 and the second body region 220 can also realize control by the size of control body zone hard mask layer 203
Make the spacing between first body region 210 and the second body region 220.In fact, this simultaneously also can boundary
The sum of the lateral length of the first doped diffusion region 211 and the second doped diffusion region 221 that are subsequently formed is made, specifically, the
The sum of lateral length of one doped diffusion region 211 and the second doped diffusion region 221 is covered firmly with the body zone for being formed in top
The lateral length (or being lateral dimension, critical size) of film layer 203 is consistent with.For another example it is previously mentioned in embodiment one,
The breakdown reverse voltage of Zener diode can be with the transverse direction of first doped diffusion region 211 and the second doped diffusion region 221
The increase of the sum of length and increase.It therefore, can be hard by changing the body zone under the premise of other process conditions are constant
The lateral length of mask layer 203, to control the lateral length of first doped diffusion region 211 and the second doped diffusion region 221
The sum of, to realize the control to the breakdown reverse voltage of the Zener diode.Specifically, the Zener diode is anti-
It can increase to breakdown voltage with the increase of 203 lateral length of body zone hard mask layer.In turn, it is different from existing vertical
To Zener diode, the preparation method of the Zener diode provided in the present embodiment proposes one kind and more directly and simply adjusts
The method for controlling the breakdown reverse voltage of the Zener diode.
Embodiment three
Another preparation method of the Zener diode is provided in the present embodiment, Figure 10~Figure 14 is implementation of the present invention
Structural schematic diagram of the Zener diode in its preparation process in example three, below with reference to shown in Figure 10~Figure 14.With embodiment two
Given in the preparation method of a kind of Zener diode that goes out compare, the difference of the preparation method of Zener diode exists in the present embodiment
In:
The forming method of the body zone hard mask layer includes:
Form a polysilicon gate 303；
Side wall 309 is formed in 303 two sides of polysilicon gate, the polysilicon gate 303 and the side wall 309 collectively form
The body zone hard mask layer.
Specifically, the body zone hard mask layer in the present embodiment by polysilicon gate 303 and is formed in 303 liang of polysilicon gate
The side wall 309 of side collectively forms, so as to mutually unite with the preparation method and preparation step of gate structure in existing MOS technique
One, it is thereby achieved that compatible with MOS technique.
It should be noted that the material of the side wall 309 for example can be silicon nitride, it can use and for example return carving technology shape
At.Time carving technology of side wall 309 is more mature at present, the thickness of side wall 309 can be more accurately controlled, therefore, for more
For the body zone hard mask layer that crystal silicon grid 303 and side wall 309 form, the accurate control of its lateral length still may be implemented.
Therefore in the present embodiment, it again may be by the lateral length of control body zone hard mask layer, expanded with controlling first doping
The lateral length in area 311 and the second doped diffusion region 321 is dissipated, and then reaches the breakdown reverse voltage of the Zener diode
Effect.
As a preferred option, after forming the polysilicon gate 303, and before forming the side wall 309, also
Include:
Using the polysilicon gate 303 as lightly doped district hard mask layer, the lightly doped district hard mask layer 303 covers described
The part of well region 302；
First mask layer of lightly doped district 307, first mask layer of lightly doped district 307 are formed in the substrate 301
The part of the well region 302 and the part of the lightly doped district hard mask layer 303 are covered, to cover using the lightly doped district first
Opening is lightly doped as first in the opening that the well region 302 is exposed in film layer 307 and lightly doped district hard mask layer 303, is formed
One first lightly doped district 310；
Second mask layer of lightly doped district 308, second mask layer of lightly doped district 308 are formed in the substrate 301
The part of the well region 302 and the part of the lightly doped district hard mask layer 303 are covered, to cover using the lightly doped district second
Opening is lightly doped as second in the opening that the well region 302 is exposed in film layer 308 and lightly doped district hard mask layer 303, is formed
One second lightly doped district 320.
Specifically, the preparation method of Zener diode provided in the present embodiment is needle with reference to figures 10 to shown in Figure 12
The situation larger to spacing distance between first body region 310 and second body region 320.The present embodiment
In, using the polysilicon gate in body zone hard mask layer as lightly doped district hard mask layer 303, and covered firmly using the lightly doped district
Film layer 303 executes such as ion implantation technology to the substrate 301, to form the first lightly doped district 305 for being spaced apart from each other and the
Two lightly doped districts 306.
And the forming method of the first lightly doped district 305 and the second lightly doped district 306 as described in the present embodiment, with
The forming method of first body region and the second body region described in embodiment two is similar, therefore this will not be repeated here.
It is ensured that the lightly doped district hard mask layer 303, which also can be avoided, directly carries out ion implanting to photoetching alignment precision
It is required that excessively high problem, can be realized the effect for reducing scale error.
Further, described after forming first body region 310 and second body region 320
First lightly doped district 305 is covered by 310 part of the first body region, and second lightly doped district 306 is by described second
The covering of 320 part of body region；And it is uncovered in first lightly doped district 305 and second lightly doped district 306
Part between first body region 310 and second body region 320.It is also assumed that be will be described
First lightly doped district 305 and the uncovered part of the second lightly doped district 306 are as body region into doped diffusion region
Extend.
Finally, executing thermal diffusion process to the substrate 301, the first doped diffusion region 311 and the second doping diffusion are formed
Area 321, first body region 310 and first doped diffusion region 311 form first doped region 31, and described
Two body regions 320 and second doped diffusion region 321 form second doped region 32.Due to being opened in diffusion technique
Before beginning, first lightly doped district 305 and the second lightly doped district 306 have just been extended to form to first body region 310
In interval region between second body region 320, therefore in thermal diffusion process, first lightly doped district 305
The expansion for extending first body region 310 and second body region 320 is equivalent to the second lightly doped district 306
Length is dissipated, so that the sum of the lateral length of the first doped diffusion region 311 and the second doped diffusion region 321 further increases, but is protected
Demonstrate,proving the Zener diode can still work normally, also, the first body region 310 and described second can also be accelerated to mix
The diffuser efficiency of miscellaneous body zone 320 improves production efficiency.
In addition, it is not difficult to find out that, lightly doped drain is executed in sequence of process steps employed in the present embodiment, with MOS technique
Processing step employed in injection technology (LDD) and source and drain injection technology is consistent.It can be seen that neat in the present embodiment
Receive diode preparation method and existing MOS technique have very high compatibility.
In conclusion the present invention provides a kind of preparation method of Zener diode and Zener diode, it is horizontal by being formed
To the first doped region and the second doped region of the different doping types to connect, the Zener diode with lateral pn-junction has been made,
The doping step for distinguishing the biggish region of doping depth and other regions is avoided the need for, is had so as to avoid preparation vertical
To pn-junction Zener diode when required additional mask plate and mask step, greatly reduce the exposure mask of Zener diode
Cost.Further, the first doped region in the present invention and the second doped region further include first formed by thermal diffusion process
Doped diffusion region and the second doped diffusion region, and then first doped diffusion region and the are controlled by a body zone hard mask layer
The sum of the lateral length of two doped diffusion regions, to realize the control of the breakdown voltage size of zener diode.In addition, of the invention
The preparation method of provided Zener diode and current MOS technique have good compatibility.
Obviously, those skilled in the art can carry out various modification and variations without departing from spirit of the invention to invention
And range.If in this way, these modification and variations of the invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the invention is also intended to include including these changes and variation.
Claims (13)
1. a kind of preparation method of Zener diode characterized by comprising
One substrate is provided, forms a well region in the substrate；
Doping type different the first doped region and the second doped region are formed in the well region, the well region, described first are mixed
Miscellaneous area and second doped region are exposed to the surface of the substrate, and first doped region and second doped region are laterally arranged
It arranges and first doped region and second doped region connects, so that first doped region and second doped region
The region that connects forms the pn-junction of the Zener diode.
2. the preparation method of Zener diode as described in claim 1, which is characterized in that first doped region and described
The forming method of two doped regions includes:
The first body region and the second body region being spaced apart from each other are formed in the substrate, and to first doping
Body zone and second body region execute thermal diffusion process, diffuse to form the Doped ions in the first body region
The first doped diffusion region laterally to connect with first body region makes the Doped ions in second body region
Diffuse to form the second doped diffusion region laterally to connect with second body region；
Wherein, first doped diffusion region and second doped diffusion region laterally connect；First body region and
First doped diffusion region forms first doped region, second body region and second doped diffusion region group
At second doped region.
3. the preparation method of Zener diode as claimed in claim 2, which is characterized in that first body region and institute
The forming method for stating the second body region includes:
A body zone hard mask layer, well region described in the body zone hard mask layer covering part are formed on the substrate；
Form first mask layer of body zone on the substrate, well region described in the first mask layer of body zone covering part and
The part of the body zone hard mask layer, with using exposing institute in first mask layer of body zone and body zone hard mask layer
The opening of well region is stated as the first doping opening, forms first body region；
Form second mask layer of body zone on the substrate, well region described in the second mask layer of body zone covering part and
The part of the body zone hard mask layer, with using exposing institute in second mask layer of body zone and body zone hard mask layer
The opening of well region is stated as the second doping opening, forms second body region；Wherein,
The trap of the body zone hard mask layer between first body region and second body region
Above area.
4. the preparation method of Zener diode as claimed in claim 3, which is characterized in that the body zone hard mask layer is also used
In defining the sum of first doped diffusion region being subsequently formed and lateral length of the second doped diffusion region, by controlling institute
The size of body zone hard mask layer is stated to control the sum of described lateral length, realizes the reverse breakdown electricity to the Zener diode
The adjustment of pressure；
Wherein, the sum of described lateral length is first doped diffusion region and second doped diffusion region transversely diffused sheet
The sum of upward length.
5. the preparation method of Zener diode as claimed in claim 3, which is characterized in that the shape of the body zone hard mask layer
Include: at method
Form a polysilicon gate；
Side wall is formed in the polysilicon gate two sides, the polysilicon gate and the side wall collectively form the hard exposure mask of the body zone
Layer.
6. the preparation method of Zener diode as claimed in claim 5, which is characterized in that formed the polysilicon gate it
Afterwards, and before forming the side wall, further includes:
Using the polysilicon gate as lightly doped district hard mask layer, well region described in the lightly doped district hard mask layer covering part；
First mask layer of lightly doped district, trap described in the first mask layer of lightly doped district covering part are formed on the substrate
The part in area and the lightly doped district hard mask layer, to utilize first mask layer of lightly doped district and lightly doped district hard mask layer
In expose the opening of the well region as first opening be lightly doped, form one first lightly doped district；
Second mask layer of lightly doped district, trap described in the second mask layer of lightly doped district covering part are formed on the substrate
The part in area and the lightly doped district hard mask layer, to utilize second mask layer of lightly doped district and lightly doped district hard mask layer
In expose the opening of the well region as second opening be lightly doped, form one second lightly doped district.
7. the preparation method of Zener diode as claimed in claim 5, which is characterized in that forming the first doping ontology
After area and second body region, first lightly doped district is covered by first body region part, described
Second lightly doped district is covered by second body region part；In first lightly doped district and second lightly doped district
Uncovered part is between first body region and second body region.
8. a kind of Zener diode, which is characterized in that including a substrate, a well region is formed in the substrate, in the trap
It is formed with doping type different the first doped region and the second doped region in area, the well region, first doped region and described
Second doped region is exposed to the surface of the substrate, and first doped region and second doped region are transversely arranged and described
First doped region and second doped region connect, the region composition institute that connects of first doped region and second doped region
State the pn-junction of Zener diode.
9. Zener diode as claimed in claim 8, which is characterized in that first doped region includes the first body region
With the first doped diffusion region laterally to connect with first body region, second doped region includes the second doping ontology
Area and the second doped diffusion region laterally to connect with second body region；
Wherein, first doped diffusion region and second doped diffusion region laterally connect, and the first doping diffusion
The region that connects of area and second doped diffusion region forms the pn-junction of the Zener diode.
10. Zener diode as claimed in claim 9, which is characterized in that mixed by described first first doped diffusion region
Doped ions in miscellaneous body zone diffuse to form, second doped diffusion region by the doping in second body region from
Son diffuses to form.
11. Zener diode as claimed in claim 10, which is characterized in that the breakdown reverse voltage of the Zener diode with
The increase of the sum of the lateral length of first doped diffusion region and second doped diffusion region and increase；Wherein, described
The sum of lateral length be the length of first doped diffusion region and second doped diffusion region transversely on dispersal direction it
With.
12. Zener diode as claimed in claim 11, which is characterized in that mix first doped diffusion region and described second
The sum of lateral length of miscellaneous diffusion region is less than or equal to 0.4 μm.
13. Zener diode as claimed in claim 8, which is characterized in that second doped region is annular region, and laterally
Surround first doped region.
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| CN113192840A (en) * | 2021-04-27 | 2021-07-30 | 上海华虹宏力半导体制造有限公司 | Semiconductor device and method for manufacturing the same |
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