CN109143437A - A kind of machine cut-ion beam etching prepares grating approach - Google Patents
A kind of machine cut-ion beam etching prepares grating approach Download PDFInfo
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- CN109143437A CN109143437A CN201811190334.4A CN201811190334A CN109143437A CN 109143437 A CN109143437 A CN 109143437A CN 201811190334 A CN201811190334 A CN 201811190334A CN 109143437 A CN109143437 A CN 109143437A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1852—Manufacturing methods using mechanical means, e.g. ruling with diamond tool, moulding
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
Abstract
The invention discloses a kind of machine cut-ion beam etchings to prepare grating approach, and during the diffraction grating for overcoming production high density groove, cutting tool point of a knife fillet makes the influence of diffraction efficiency of grating decline.The present invention is a kind of method that ion beam etching is used on the basis of machine cut, by one piece of machine cut motherboard grating replication come daughter board grating, other reflectance coatings such as Al or GaAs film are plated on its surface, and appropriate ions beam incidence angle is selected to carry out ion beam etching, cutting gullet part ion beam etch rate is faster than cutting other parts, circular arc can be removed, so that circular arc etching is pointed at, and grating blaze angle remains unchanged in ion beam etching of Fresnel, groove depth increases, and improves diffraction efficiency of grating.Compared with general holography-ion beam etching grating, machine cut-ion beam etching provided by the invention prepares grating approach, it is easy to accomplish small blaze angle is easy, easily significantly improves grating and uses the advantages such as the diffraction efficiency of wave band.
Description
Technical field
The present invention relates to a kind of manufacture technology field of diffraction optical element employed in spectral instrument (diffraction grating),
Grating approach is prepared using machine cut-ion beam etching more particularly to a kind of.
Background technique
Diffraction grating is important beam splitter employed in spectral instrument, and its diffraction efficiency is that an important technology refers to
Mark.Diffraction efficiency of grating is high, helps to improve the signal-to-noise ratio of spectral instrument, it helps improves instrument to infant laser signal detection energy
Power.
As the national and common people are environmentally safe and protect pay attention to day by day and concern, especially to atmosphere pollution and dirt
The monitoring of dye source；Demand is detected for the corona discharge of the industrial securities such as electric power and railway operation；Forest department is pre- to forest fire
Alert prevention demand；And in domain requirements such as biomedicine, criminal investigation, the inspections of public security text.Ultraviolet band imaging spectral instrument is at these
Field, which uses, has its irreplaceable advantage of all band imaging spectrometer device, however the light of ultraviolet band is easy by big aspiration
It receives, while photodetector is also low in ultraviolet band probe response, limits ultraviolet band imaging spectral instrument in these fields
Development.It therefore, is an at low cost, effect by improving the diffraction efficiency of the diffraction grating in ultraviolet band imaging spectral instrument
The significant approach of fruit.Diffraction grating cutting, which generally uses, has triangle flute profile, while small blaze angle (less than 8 °) also being needed to come
Meet ultraviolet band high-diffraction efficiency requirement；There is dispersion, the condenser performance of light using curved surface face type diffraction grating, help to subtract
Few optical element quantity simplifies instrument and constitutes；In addition ultraviolet waves length facilitates to reduce equipment instrument using high density groove,
Mitigate weight.
Good triangle flute profile can be cut using single precision machine tool machine cut, the roughness of grating line is small
In 2nm (rms), wavefront aberrations can accurately cut small blaze angle (less than 8 °) in 0.5um or so, but high in cutting
When incisure density diffraction grating, since round tool point of a knife is there are circular arc, so that diffraction efficiency of grating is remarkably decreased (when using knife
When the round tool cutting incisure density of sharp arc radius 1um/2um is 600 lines/mm, the maximum diffraction efficiency of wave band is used
49.04%), to be unable to satisfy the requirement of ultraviolet band (240-400nm) high-diffraction efficiency.And use holography-ion beam etching side
Method has the diffraction grating processing of small blaze angle (less than 8 °) relatively difficult ion beam etching although etching is high-efficient,
The triangle flute profile etched simultaneously is irregular.
Machine cut-ion beam etching preparation method is used the invention proposes a kind of, machine cut is first passed through and has provided
The former of the high incisure density (200 lines/mm or more) of good triangle flute profile and small blaze angle (less than 8 °) carves diffraction grating
(motherboard diffraction grating), then daughter board diffraction grating is copied, finally by ion beam etching mode diffraction grating cutting bottom
Circular arc portion etching is pointed at, while keeping grating blaze angle constant, to increase groove depth, improves optical grating diffraction effect
Rate.
Summary of the invention
Technology of the invention solves the problems, such as: overcoming the deficiencies of the prior art and provide a kind of using machine cut-ion beam quarter
Preparation method is lost, it is low with the diffraction efficiency for overcoming current precision machinery to cut high incisure density diffraction grating；Holography-ion beam is carved
Etching method etches the problems such as diffraction grating is difficult and the triangle flute profile of its cutting is irregular of small blaze angle, can obtain ratio
Precision machinery cuts deeper groove depth, improves diffraction efficiency of grating, can also obtain more more regular than holography-ion beam etching
Triangle flute profile, and the grating cutting of smaller blaze angle.
Present invention provide the technical scheme that a kind of machine cut-ion beam etching prepares grating approach, including walk as follows
It is rapid:
Step 1: high density groove is provided in machine cut and the former quarter diffraction grating with small blaze angle, original carve diffraction
Grating is as motherboard diffraction grating, for replicating daughter board diffraction grating；
Step 2: determining the Coating Materials and thicknesses of layers for replicating daughter board diffraction grating；Determine ion beam in daughter board
The incidence angle of diffractive grating surface enables the cutting gullet part of replica grating to remove, with small blaze angle
Cutting contoured surface most wideization；
Step 3: the former diffraction grating of carving to machine cut carries out daughter board diffraction-grating replica, and in duplication daughter board diffraction
Plated film during grating is processed for ion beam etching；
Step 4: daughter board diffraction grating in Ion beam incident angles, carries out ion beam etching processing, so that duplication is spread out
It is removed the cutting gullet part for penetrating grating.
In the step 1, at a constant temperature, using the arc-shaped diamond cutter of the preferred 0.5um~1.5um of nose radius
Precision machine tool machine cut is carried out, the time needed for step 4 intermediate ion beam etching is completed can be utmostly shortened.
In the step 1, high density groove is preferably 500~600 lines/mm, can be reduced equipment instrument, in ultraviolet band
Preferably application.
In the step 1, blaze angle is less than 8 °, this is obtained by a large amount of repetition tests, so that having in ultraviolet band
There is high-diffraction efficiency.
In the step 1, original carve diffraction grating cutting groove profile be it is triangular in shape, most of luminous energy of diffraction can be made
Amount is transferred in the required order of diffraction, while being also convenient for machine cut.
In the step 1, the substrate that original carves diffraction grating is metallic nickel or stainless steel, improves grating substrate rigidity, avoids
Because cutting error increases caused by substrate deformation.
In the step 1, the surface face type that machine cut original carves diffraction grating is curved surface or plane, to meet difference
The demand of optical system structure.
In the step 2, Coating Materials is metal film Al or deielectric-coating GaAs, and thicknesses of layers is 0.35~0.5um.
In the step 2, incidence angle φ is preferably 52~62 °, shortens ion needed for removing cutting gullet part
Beam etch period, while it is blocked up to avoid plating reflection film thickness.
In the step 3, ion beam is the ion of inert gas, and the ion of the inert gas includes He, Ar or Kr.
CCl2F2 or O2 gas is added in the ion of the inert gas, carries out reaction equation ion etching.
The principle of the invention lies in: it is using the basic principle that machine cut-ion beam etching prepares grating: passes through first
Machine cut goes out the triangle flute profile of good rule, and the cutting of the high density ruling grating with small blaze angle (less than 8 °)；
Secondly it is protection motherboard diffraction grating, reduces production cost, be convenient for ion etching, obtains daughter board by replicating motherboard diffraction grating
Diffraction grating.There are circular arc portions for the grating cutting bottom gone out due to machine cut, so that grating groove depth reduces, grating spreads out
It is significant to penetrate efficiency decline；Finally by ion beam etching, under appropriate ions beam incidence angle, due to daughter board diffraction grating cutting bottom
Circular arc portion is fast compared to the other parts etch rate other than circular arc portion, and the ion beam etching rate phase of other parts
Together, then circular arc can be well removed, so that circular arc etching is pointed at, while grating blaze angle is kept in ion beam etching of Fresnel
It is constant, to increase groove depth, improve diffraction efficiency of grating.
The advantages of the present invention over the prior art are that:
(1) during the present invention overcomes production diffraction grating, precision machine tool machine cut diamond cutter point of a knife fillet makes
Obtain the influence of diffraction efficiency of grating decline.During precision machine tool machine cut diffraction grating, due to diamond cutter point of a knife
There are circular arc (circular arc least radius are generally 0.5um~3um), cut triangle trough-shaped base section in circular arc.Especially making
When high density groove (incisure density be 200-600 line/mm) and diffraction grating with small blaze angle (less than 8 °), the circular arc meeting
Cause groove depth to significantly reduce, (when incisure density is 600 lines/mm, glitters so that diffraction efficiency of grating is decreased obviously
49.04%) the maximum diffraction efficiency of the order of diffraction is only.
(2) present invention is a kind of method that ion beam etching is used on the basis of machine cut, passes through one piece of machine cut
Motherboard diffraction-grating replica and come daughter board diffraction grating, plate other reflectance coatings such as Al film or GaAs film on its surface, and
Appropriate ions beam incidence angle is selected to carry out ion beam etching, daughter board diffraction grating cutting gullet part ion beam etch rate
It is faster than the other parts ion beam etching rate other than circular arc, and the ion beam etching rate of other parts is identical, then may be used
Well to remove circular arc, so that circular arc etching is pointed at, while grating blaze angle remains unchanged in ion beam etching of Fresnel, from
And increase groove depth, it improves diffraction efficiency of grating (the maximum diffraction efficiency of blazed diffraction grade rises to 71.85%).With it is general
Holography-ion beam etching grating is compared, and machine cut-ion beam etching provided by the invention prepares grating approach, it is easy to accomplish
Small blaze angle (less than 8 °) is easy, easily significantly improves grating and uses the advantages such as the diffraction efficiency of wave band.
(3) present invention is to atmosphere pollution and Pollution Source Monitoring；For the electricity of the industrial securities such as electric power and railway operation
Corona detection；Demand is taken precautions against to Forest Fire Alarm by forest department；And in fields such as biomedicine, criminal investigation, the inspections of public security text
The technology of preparing of required diffraction grating is particularly significant.
Detailed description of the invention
Fig. 1 is that the production for the curved diffraction gratings (etching density is 500 lines/mm) that the embodiment of the present invention 1 provides is substantially former
Reason figure, wherein 11 be arc-shaped diamond cutter, 12 for curved surface original carve diffraction grating substrate, 13 be metallic reflection aluminium film, 14
It is daughter board curved diffraction gratings substrate for epoxy resin, 15,16 be Ar+ ion beam, and 17 be the triangle cutting wheel at arc groove bottom
Exterior feature, 18 be the triangle cutting profile of wedge angle slot bottom.B1 is blaze angle before ion beam etching is processed, and B2 is ion beam etching processing
Blaze angle afterwards；
Fig. 2 be the embodiment of the present invention 1 provide in the case where Ar+ ion beam incident angle is 52 °, curved diffraction gratings (etching
Density is 500 lines/mm) triangle channel shaped configuration evolvement simulation figure, wherein 1 processed for ion etching before grating flute profile wheel
Exterior feature is schemed, and 2 be grating flute profile profile diagram after ion etching processing, and φ is Ar+ Ion beam incident angles, and 4 be metallic reflection aluminium before etching
Film thickness, 5 be metallic reflection aluminium film thickness after etching；
Fig. 3 be the embodiment of the present invention 1 provide in the case where 16 incident angle of Ar+ ion beam is 52 °, daughter board curved diffraction gratings
Triangle flute profile (before ion beam etching processing) and the ion etching Rate Relationship figure of (etching density is 500 lines/mm), wherein 3
For the circular arc portion of grating triangle cutting；
Fig. 4 is daughter board curved diffraction gratings (the etching density for the ion beam etching processing front and back that the embodiment of the present invention 1 provides
Diffraction rank for 500 lines/mm) is -1 grade of diffraction efficiency curve figure；
Fig. 5 is that the production for the curved diffraction gratings (etching density is 550 lines/mm) that the embodiment of the present invention 2 provides is substantially former
Reason figure, wherein 19 be arc-shaped diamond cutter, and 20 carve diffraction grating substrate for curved surface original, and 21 be deielectric-coating GaAs, and 14 are
Epoxy resin, 23 be daughter board curved diffraction gratings substrate, and 24 be He+ ion beam, and 25 be the triangle cutting profile at arc groove bottom,
26 be the triangle cutting profile of wedge angle slot bottom.B3 is blaze angle before ion beam etching is processed, and B4 is after ion beam etching is processed
Blaze angle；
Fig. 6 be the embodiment of the present invention 2 provide in the case where 24 incident angle of He+ ion beam is 60 °, curved diffraction gratings (carve
Erosion density is 550 lines/mm) triangle channel shaped configuration evolvement simulation figure, wherein 6 processed for ion etching before grating flute profile
Profile diagram, 7 be grating flute profile profile diagram after ion etching processing, and φ 1 is He+ Ion beam incident angles, and 8 be deielectric-coating before etching
GaAs thickness, 9 be deielectric-coating GaAs thickness after etching；
Fig. 7 be the embodiment of the present invention 2 provide in the case where 24 incident angle of He+ ion beam is 60 °, daughter board curved diffraction gratings
Triangle flute profile (before ion beam etching processing) and the ion etching Rate Relationship figure of (etching density is 550 lines/mm), wherein
10 be the circular arc portion of grating triangle cutting；
Fig. 8 is the daughter board curved diffraction gratings (etching for the He+ ion beam etching processing front and back that the embodiment of the present invention 2 provides
Density is 550 lines/mm) diffraction rank be -1 grade of diffraction efficiency curve figure；
Fig. 9 is that the production for the curved diffraction gratings (etching density is 580 lines/mm) that the embodiment of the present invention 3 provides is substantially former
Reason figure, wherein 27 be arc-shaped diamond cutter, and 28 carve diffraction grating substrate for curved surface original, and 21 be deielectric-coating GaAs, and 14 are
Epoxy resin, 29 be daughter board curved diffraction gratings substrate, and 30 be Ar and CCl2F2 mixed gas reaction ion beam, and 31 be arc groove
The triangle cutting profile at bottom, 32 be the triangle cutting profile of wedge angle slot bottom.B5 is blaze angle before ion beam etching is processed, B6
For blaze angle after ion beam etching processing；
Figure 10 be the embodiment of the present invention 3 provide be in 30 incident angle of Ar and CCl2F2 mixed gas reaction ion beam
Under 59 °, the evolvement simulation figure of the triangle channel shaped configuration of curved diffraction gratings (etching density is 580 lines/mm), wherein 33 are
Grating flute profile profile diagram before reactive ion etching is processed, 34 be grating flute profile profile diagram after reactive ion etching processing, and φ 2 is He
+ Ion beam incident angles, 35 is etch preceding deielectric-coating GaAs thickness, and 36 be deielectric-coating GaAs thickness after etching；
Figure 11 be the embodiment of the present invention 3 provide be in 30 incident angle of Ar and CCl2F2 mixed gas reaction ion beam
Under 59 °, the triangle flute profile of daughter board curved diffraction gratings (etching density is 580 lines/mm) (before reactive ion beam etching (RIBE) processing)
With reactive ion etching Rate Relationship figure, wherein 37 be the circular arc portion of grating triangle cutting；
Figure 12 is the Ar that the embodiment of the present invention 3 provides and the son of CCl2F2 mixed gas reaction ion beam etching processing front and back
The diffraction rank of plate curved diffraction gratings (etching density is 580 lines/mm) is -1 grade of diffraction efficiency curve figure；
Figure 13 is that the production for the plane diffraction grating (etching density is 600 lines/mm) that the embodiment of the present invention 4 provides is substantially former
Reason figure, wherein 38 be arc-shaped diamond cutter, and 39 carve diffraction grating substrate for plane original, and 13 be metal film Al, and 14 be ring
Oxygen resin, 40 be daughter board plane diffraction grating substrate, 16 be Ar+ ion beam, 41 be arc groove bottom triangle cutting profile, 42
For the triangle cutting profile of wedge angle slot bottom.B7 is blaze angle before ion beam etching is processed, and B8 is to dodge after ion beam etching is processed
Credit angle；
Figure 14 be the embodiment of the present invention 4 provide in the case where 16 incident angle of Ar+ ion beam is 62 °, plane diffraction grating (carve
Erosion density is 600 lines/mm) triangle channel shaped configuration evolvement simulation figure, wherein 43 processed for ion etching before grating flute profile
Profile diagram, 44 be grating flute profile profile diagram after ion etching processing, and φ 3 is Ar+ Ion beam incident angles, and 45 is anti-for metal before etching
Aluminium film thickness is penetrated, 46 be metallic reflection aluminium film thickness after etching；
Figure 15 be the embodiment of the present invention 4 provide in the case where 16 incident angle of Ar+ ion beam is 62 °, daughter board planar diffraction light
Triangle flute profile (before ion beam etching processing) and the ion etching Rate Relationship figure of grid (etching density is 600 lines/mm),
In, 47 be the circular arc portion of grating triangle cutting；
Figure 16 is the daughter board plane diffraction grating (etching for the Ar+ ion beam etching processing front and back that the embodiment of the present invention 4 provides
Density is 600 lines/mm) diffraction rank be -1 grade of diffraction efficiency curve figure.
Specific embodiment
With reference to the accompanying drawing and specific embodiment further illustrates the present invention.
A kind of machine cut-ion beam etching of the present invention prepares grating approach, and this method comprises the following steps:
Step 1: at a constant temperature, using the arc-shaped diamond cutter of nose radius 0.5um~2um, precision machine tool is mechanical
Cut the machine cut with high density groove (incisure density is 200~600 lines/mm) and with small blaze angle (less than 8 °)
Original carves diffraction grating as motherboard diffraction grating, for copying daughter board diffraction grating.
Step 2: ion etching daughter board diffraction grating cutting contour surface change procedure is simulated by dedicated etching software,
The determining Coating Materials for replicating daughter board diffraction grating is metal film and thicknesses of layers is 0.2~0.5um；Determine ion beam
It is 45~65 ° in the incidence angle φ of daughter board diffraction grating macro surface, keeps the cutting gullet part of diffraction grating clear
It removes, cutting contoured surface most wideization with blaze angle.
Step 3: the former diffraction grating of carving to machine cut replicates, and plated during replicating daughter board diffraction grating
With a thickness of the metal film of 0.2~0.5um, processed for ion beam etching.Duplication the purpose is to: protection motherboard diffraction grating, drop
Low production cost is convenient for ion beam etching.
Step 4: daughter board diffraction grating when Ion beam incident angles φ is 45~65 °, carries out ion beam etching and adds
Work increases groove depth so that the cutting gullet part of diffraction grating is removed, to improve making for diffraction grating
With the other diffraction efficiency of the order of diffraction.
Specific embodiments of the present invention are described below.
Embodiment 1: incisure density is 500 lines/mm and there is the machinery for the curved diffraction gratings that small blaze angle is 4.5 ° to cut
Cut-ion beam etching prepares grating approach.As shown in Figure 1.
Step 1: being 500 lines/mm according to incisure density, it is 2um that screen periods, which can be obtained, and considers icking tool actual cut
It will appear abrasion in the process, so the arc-shaped diamond cutter 11 using nose radius 1.5um carves diffraction light in curved surface original
It is 4.5 ° to meet ultraviolet band (240-400nm) high-diffraction efficiency that small blaze angle is cut on grid base bottom 12.Keep permanent simultaneously
It works in warm situation, temperature fluctuation variation is avoided to influence icking tool cutting precision.After having cut curved surface original quarter diffraction grating, examined
It tests: cutting flute profile, screen periods is examined using the laser microscope of Japanese Keyemce company；Grating is examined using Zygo interferometer
Wave surface；Diffraction efficiency of grating is examined using northern light century monochromator.After the assay was approved, as motherboard diffraction grating, under preparation
One step copies daughter board diffraction grating.It is nickel or stainless steel that its mean camber original, which carves 12 material of diffraction grating substrate,.
Step 2: dedicated etching software, simulation Ar+ ion beam etching daughter board diffraction grating cutting contour surface variation are utilized
Process.As shown in Fig. 2, being 52 ° of situation Imitatings to having come out in 16 incidence angle φ of Ar+ ion beam, pass through Ar+ ion beam etching
Grating flute profile profile diagram 1 before processing, it is known that grating channel shaped configuration is the 17 (heavy black of triangle cutting profile at arc groove bottom at this time
Indicate) and metallic reflection aluminium film thickness 4 is 0.35um before etching, and obtains ion after simulation Ar+ ion beam etching by 4 minutes
Grating flute profile profile diagram 2 is the quasi- figure of best grating flute profile profile die after lithography, and grating channel shaped configuration is at this time as shown in Figure 2
Metallic reflection aluminium film thickness 5 is 0.125um after the triangle cutting profile 18 (heavy black expression) and etching of wedge angle slot bottom.It is logical
Crossing simulation and determining that duplication daughter board diffraction grating needs plating metal reflective aluminum film thickness is 0.35um, while also determining Ar+ ion beam
16 best ion beam incidence angle φ are 52 °.Wherein abscissa is grating channel shaped configuration X-direction coordinate points, and ordinate is grating slot
Shape profile Y-direction coordinate points, screen periods 2um.
Step 3: the incisure density 500 lines/mm curved surface original good to machine cut is carved diffraction grating and is replicated, and uses
Conventional replication process, using vacuum coating method, so that grating flute profile is transferred on filial generation diffraction grating, it is that original is carved curved surface
One layer of very thin oil lamella is deposited as motherboard as separating layer on vacuum coating equipment for diffraction grating, then one is deposited on oil lamella
Layer according to step 2 determine with a thickness of 0.35um metallic reflection aluminium film 13, then epoxy resin 14 as bonding agent effect under
This layer of aluminium film is attached in daughter board curved diffraction gratings substrate 15, to obtain daughter board curved diffraction gratings.Wherein daughter board is bent
Diffraction grating substrate 15 material in face is devitrified glass or other low-expansion optical materials.
Step 4: ion etching processing is carried out to daughter board curved diffraction gratings, the Ar+ ion beam 16 determined according to step 3
Incidence angle φ is 52 ° of progress ion etchings, can be the triangle cutting profile at arc groove bottom by 16 lithography of Ar+ ion beam
17 etchings are pointed at the triangle cutting profile 18 of slot bottom, and key is the arc groove bottom etch rate ratio of grating cutting in addition to circle
Other cutting region etch rates except arc slot bottom are high, so that the cutting gullet part of diffraction grating be enable to remove.
As shown in figure 3, giving when 16 incidence angle φ of Ar+ ion beam is 52 °, incisure density is 500 lines/mm daughter board curved surface
The triangular groove shape of diffraction grating and 16 etch rate relational graph of Ar+ ion beam, the arc sections of grating triangle cutting known in Fig. 3
Other cutting region ion etching rate height of points 3 Ar+ ion etching speed ratio other than circular arc portion 3 are both greater than
0.11um/min, and other cutting region ion etching rates other than circular arc portion 3 are equal to 0.11um/min.
By 16 lithography of Ar+ ion beam, the groove depth of daughter board curved diffraction gratings is increased to by original 0.102um
0.137um, and other cutting region ion etching rates other than circular arc portion 3 are all 0.11um/min, while
It is remained unchanged during 16 lithography of Ar+ ion beam.So blaze angle B1 adds with ion beam etching before ion beam etching is processed
Blaze angle B2 is still 4.5 ° and remains unchanged after work.It is known by a person skilled in the art that in the constant situation of grating cutting blaze angle, light
The absolute diffraction efficiency of grid increases as groove depth increases.To significantly improve the use order of diffraction of daughter board curved diffraction gratings
For -1 grade of absolute diffraction efficiency.As shown in figure 4, giving the curved diffraction gratings of the present embodiment ion beam etching processing front and back
The diffraction rank of (etching density is 500 lines/mm) is -1 grade of diffraction efficiency curve figure, before ion beam etching processing is known in Fig. 4
Absolute diffraction efficiency improves 11% or so afterwards, and the absolute diffraction efficiency of highest increases to 71.85% by 60.5%, minimum diffraction efficiency by
40.6% increases to 51.4%.
Embodiment 2: incisure density is 550 lines/mm and there is the machinery for the curved diffraction gratings that small blaze angle is 5.4 ° to cut
Cut-ion beam etching prepares grating approach.
Step 1: being 550 lines/mm according to incisure density, it is 1.8um that screen periods, which can be obtained, and considers that icking tool is practical and cut
It will appear abrasion during cutting, so the arc-shaped diamond cutter 19 using nose radius 1.0um carves diffraction in curved surface original
It is 5.4 ° to meet ultraviolet band (250-500nm) high-diffraction efficiency that small blaze angle is cut on grating substrate 20.It keeps simultaneously
It works in the case of constant temperature, temperature fluctuation variation is avoided to influence icking tool cutting precision.After having cut curved surface original quarter diffraction grating, carry out
It examines: cutting flute profile, screen periods is examined using the laser microscope of Japanese Keyemce company；Light is examined using Zygo interferometer
Lattice wave front；Diffraction efficiency of grating is examined using northern light century monochromator.After the assay was approved, as motherboard diffraction grating, prepare
Daughter board diffraction grating is copied in next step.It is nickel or stainless steel that its mean camber original, which carves 20 material of diffraction grating substrate,.
Step 2: dedicated etching software, simulation He+ ion beam etching daughter board diffraction grating cutting contour surface variation are utilized
Process.As shown in fig. 6, being 60 ° of situation Imitatings to having come out in 24 incidence angle φ 1 of He+ ion beam, carved by He+ ion beam
Grating flute profile profile diagram 6 before erosion is processed, it is known that grating channel shaped configuration is that the triangle cutting profile 25 at arc groove bottom is (thick black at this time
Line indicates) and deielectric-coating GaAs thickness 8 is 0.50um before etching, obtained after simulation He+ ion beam etching by 5.8 minutes from
Grating flute profile profile diagram 7 is the quasi- figure of best grating flute profile profile die after sub- lithography, as seen from the figure grating channel shaped configuration at this time
It is 0.295um for deielectric-coating GaAs thickness 9 after the triangle cutting profile 26 (heavy black expression) and etching of wedge angle slot bottom.It is logical
It crosses simulation and determines that duplication daughter board diffraction grating needs to plate deielectric-coating GaAs with a thickness of 0.50um, while also determining He+ ion beam 24
Best ion beam incidence angle φ 1 is 60 °.Wherein abscissa is grating channel shaped configuration X-direction coordinate points, and ordinate is grating flute profile
Profile Y-direction coordinate points, screen periods 1.8um.
Step 3: the incisure density 550 lines/mm curved surface original good to machine cut is carved diffraction grating and is replicated, and uses
Conventional replication process, using vacuum coating method, so that grating flute profile is transferred on filial generation diffraction grating, it is that original is carved curved surface
One layer of very thin oil lamella is deposited as motherboard as separating layer on vacuum coating equipment for diffraction grating, then one is deposited on oil lamella
Then the deielectric-coating GaAs material 21 with a thickness of 0.50um that layer is determined according to step 2 is made in epoxy resin 14 as bonding agent
This layer of GaAs film is attached in daughter board curved diffraction gratings substrate 23 with lower, to obtain daughter board curved diffraction gratings.Wherein
23 material of daughter board curved diffraction gratings substrate is devitrified glass or other low-expansion optical materials.
Step 4: ion etching processing is carried out to daughter board curved diffraction gratings, the He+ ion beam 24 determined according to step 3
Incidence angle φ 1 is 60 ° of progress ion etchings, can be the triangle cutting wheel at arc groove bottom by 24 lithography of He+ ion beam
25 etching of exterior feature is pointed at the triangle cutting profile 26 of slot bottom, key be the arc groove bottom etch rate ratio of grating cutting in addition to
Other cutting region etch rates except arc groove bottom are high, to keep the cutting gullet part of diffraction grating clear
It removes.After the completion of ion etching, a layer thickness is deposited finally as 0.08um aluminium film and plates the fluorination of thickness 0.025um deielectric-coating again
Magnesium, to improve ultraviolet wavelength diffraction efficiency.As shown in fig. 7, give when 24 incidence angle φ 1 of He+ ion beam is 60 °,
Incisure density is the triangular groove shape and 24 etch rate relational graph of He+ ion beam of 550 lines/mm daughter board curved diffraction gratings, Fig. 7
In known to the cutting of grating triangle circular arc portion 10 other quarters of the He+ ion etching speed ratio other than circular arc portion 10
Ion etching rate height in slot region is both greater than 0.03um/min, and other cutting regions ion other than circular arc portion 3
Etch rate is equal to 0.03um/min.
By 24 lithography of He+ ion beam, the groove depth of daughter board curved diffraction gratings is increased to by original 0.122um
0.146um, and other cutting region ion etching rates other than circular arc portion 10 are all 0.03um/min, while
It is remained unchanged during 24 lithography of He+ ion beam.So blaze angle B3 adds with ion beam etching before ion beam etching is processed
Blaze angle B4 is still 5.4 ° and remains unchanged after work.It is known by a person skilled in the art that in the constant situation of grating cutting blaze angle, light
The absolute diffraction efficiency of grid increases as groove depth increases.To significantly improve the use order of diffraction of daughter board curved diffraction gratings
For -1 grade of absolute diffraction efficiency.As shown in figure 8, giving the curved diffraction gratings of the present embodiment ion beam etching processing front and back
The diffraction rank of (etching density is 550 lines/mm) is -1 grade of diffraction efficiency curve figure, before ion beam etching processing is known in Fig. 8
Absolute diffraction efficiency improves 11% or so afterwards, and the absolute diffraction efficiency of highest increases to 68.98% by 56.64%, minimum diffraction efficiency
41.03% is increased to by 31.82%.
Embodiment 3: incisure density is 580 lines/mm and there is the machinery for the curved diffraction gratings that small blaze angle is 4.8 ° to cut
Cut-ion beam etching prepares grating approach.
Step 1: being 580 lines/mm according to incisure density, it is 1.7um that screen periods, which can be obtained, and considers that icking tool is practical and cut
It will appear abrasion during cutting, so the arc-shaped diamond cutter 27 using nose radius 1.0um carves diffraction in curved surface original
It is 4.8 ° to meet ultraviolet band (220-400nm) high-diffraction efficiency that small blaze angle is cut on grating substrate 28.It keeps simultaneously
It works in the case of constant temperature, temperature fluctuation variation is avoided to influence icking tool cutting precision.After having cut curved surface original quarter diffraction grating, carry out
It examines: cutting flute profile, screen periods is examined using the laser microscope of Japanese Keyemce company；Light is examined using Zygo interferometer
Lattice wave front；Diffraction efficiency of grating is examined using northern light century monochromator.After the assay was approved, as motherboard diffraction grating, prepare
Daughter board diffraction grating is copied in next step.It is nickel or stainless steel that its mean camber original, which carves 28 material of diffraction grating substrate,.
Step 2: dedicated etching software, simulation Ar and CCl2F2 mixed gas reaction ion beam etching daughter board diffraction are utilized
Grating cutting contour surface change procedure.As shown in Figure 10, to having come out in Ar and CCl2F2 mixed gas reaction ion beam 30
Incidence angle φ 2 is 59 ° of situation Imitatings, grating flute profile wheel before being processed by Ar and CCl2F2 mixed gas reaction ion beam etching
Wide Figure 33, it is known that before grating channel shaped configuration is the triangle cutting profile 31 (heavy black expression) at arc groove bottom and etches at this time
Deielectric-coating GaAs thickness 35 is 0.35um, after 6.2 minutes simulation Ar and CCl2F2 mixed gas reaction ion beam etching
Grating flute profile profile diagram 34 is the quasi- figure of best grating flute profile profile die after to ion etching processing, as seen from the figure grating flute profile at this time
Deielectric-coating GaAs thickness 36 is after profile is the triangle cutting profile 32 (heavy black expression) of wedge angle slot bottom and etches
0.152um.It determines that duplication daughter board diffraction grating needs to plate deielectric-coating GaAs with a thickness of 0.35um by simulation, while also determining Ar
It is 59 ° with 30 best ion beam incidence angle φ 2 of CCl2F2 mixed gas reaction ion beam.Wherein abscissa is grating channel shaped configuration
X-direction coordinate points, ordinate are grating channel shaped configuration Y-direction coordinate points, screen periods 1.7um.
Step 3: the incisure density 580 lines/mm curved surface original good to machine cut is carved diffraction grating and is replicated, and uses
Conventional replication process, using vacuum coating method, so that grating flute profile is transferred on filial generation diffraction grating, it is that original is carved curved surface
One layer of very thin oil lamella is deposited as motherboard as separating layer on vacuum coating equipment for diffraction grating, then one is deposited on oil lamella
Layer, with a thickness of 0.35um deielectric-coating GaAs material 21, is then acted in epoxy resin 14 as bonding agent according to step 2 determination
It is lower that this layer dielectric GaAs is attached in daughter board curved diffraction gratings substrate 29, to obtain daughter board curved diffraction gratings.Its
Middle 29 material of daughter board curved diffraction gratings substrate is devitrified glass or other low-expansion optical materials.
Step 4: ion etching processing is carried out to daughter board curved diffraction gratings, the Ar and CCl2F2 determined according to step 3
30 incidence angle φ 2 of mixed gas reaction ion beam is 59 ° of progress reactive ion etchings, passes through Ar and CCl2F2 mixed gas reaction
30 lithography of ion beam can etch the triangle cutting profile 31 at arc groove bottom the triangle cutting profile for being pointed at slot bottom
32, key is the arc groove bottom etch rate of grating cutting than other cutting region etch rates other than arc groove bottom
Height, so that the cutting gullet part of diffraction grating be enable to remove.After the completion of ion etching, a layer thickness, which is finally deposited, is
0.08um aluminium film and thickness 0.025um deielectric-coating magnesium fluoride is plated again, to improve ultraviolet wavelength diffraction efficiency.As shown in figure 3,
It gives when Ar and 30 incidence angle φ 2 of CCl2F2 mixed gas reaction ion beam is 59 °, incisure density is 580 lines/mm
Daughter board curved diffraction gratings triangular groove shape and Ar and 30 etch rate relational graph of CCl2F2 mixed gas reaction ion beam, figure
In 11 known to the cutting of grating triangle circular arc portion 37 Ar and CCl2F2 mixed gas reaction ion etching speed ratio in addition to
Other cutting region reactive ion etching rate height except circular arc portion 37 are both greater than 0.12um/min, and in addition to arc sections
Other cutting region reactive ion etching rates except 37 are divided to be equal to 0.12um/min.
By Ar and 30 lithography of CCl2F2 mixed gas reaction ion beam, the groove depth of daughter board curved diffraction gratings
0.137um is increased to by original 0.102um, and other cutting region ion etching rates other than circular arc portion 37 are all
For 0.12um/min, while being remained unchanged during Ar and CCl2F2 mixed gas reaction 30 lithography of ion beam.So
The preceding blaze angle B5 of ion beam etching processing is still 4.8 ° with blaze angle B6 after ion beam etching processing and remains unchanged.Art technology
Known to personnel, in the constant situation of grating cutting blaze angle, the absolute diffraction efficiency of grating increases as groove depth increases.From
And significantly improve the absolute diffraction efficiency for the use of the order of diffraction being -1 grade of daughter board curved diffraction gratings.As shown in figure 12, it gives
(etching density is 580 for the present embodiment Ar and the curved diffraction gratings of CCl2F2 mixed gas reaction ion beam etching processing front and back
Line/mm) diffraction rank be -1 grade of diffraction efficiency curve figure, the absolute diffraction in reactive ion beam etching (RIBE) processing front and back known in Figure 12
Efficiency improves 12% or so, and the absolute diffraction efficiency of highest increases to 69.42% by 56.82%, and minimum diffraction efficiency is increased by 34.86%
To 45.04%.
Embodiment 4: incisure density is 600 lines/mm and there is the machinery for the curved diffraction gratings that small blaze angle is 6.4 ° to cut
Cut-ion beam etching prepares grating approach.
Step 1: being 600 lines/mm according to incisure density, it is 1.67um that screen periods, which can be obtained, and considers that icking tool is practical and cut
It will appear abrasion during cutting, it is also contemplated that tool arc influences to deepen on diffraction efficiency, so using nose radius range for 0.5
The arc-shaped diamond cutter 38 of~1um is carved in plane original and cuts small blaze angle in diffraction grating substrate 39 as 6.4 ° with full
Sufficient ultraviolet band (300-500nm) high-diffraction efficiency.It keeps working in the case of constant temperature simultaneously, temperature fluctuation variation is avoided to influence to carve
Knife cutting precision.It after having cut plane original quarter diffraction grating, tests: using the laser capture microdissection microscopy of Japanese Keyemce company
Test cutting flute profile, screen periods；Grating wave surface is examined using Zygo interferometer；Grating is examined to spread out using northern light century monochromator
Penetrate efficiency.After the assay was approved, as motherboard diffraction grating, prepare to copy daughter board diffraction grating in next step.Wherein plane original is carved
39 material of diffraction grating substrate is nickel or stainless steel.
Step 2: dedicated etching software, simulation Ar+ ion beam etching daughter board diffraction grating cutting contour surface variation are utilized
Process.As shown in figure 14, it is 62 ° of situation Imitatings to having come out in 16 incidence angle φ of Ar+ ion beam, is carved by Ar+ ion beam
Grating flute profile profile diagram 43 before erosion is processed, it is known that grating channel shaped configuration is that the triangle cutting profile 41 at arc groove bottom is (thick at this time
Black line indicates) and metallic reflection aluminium film thickness 45 is 0.402um before etching, and is obtained after 4 minutes simulation Ar+ ion beam etchings
Grating flute profile profile diagram 44 is the quasi- figure of best grating flute profile profile die after to ion etching processing, as seen from the figure grating flute profile at this time
Metallic reflection aluminium film thickness 46 is after profile is the triangle cutting profile 42 (heavy black expression) of wedge angle slot bottom and etches
0.212um.Determining that duplication daughter board diffraction grating needs plating metal reflective aluminum film thickness by simulation is 0.402um, while also really
Determining 16 best ion beam incidence angle φ of Ar+ ion beam is 62 °.Wherein abscissa is grating channel shaped configuration X-direction coordinate points, indulges and sits
It is designated as grating channel shaped configuration Y-direction coordinate points, screen periods 1.67um.
Step 3: the incisure density 600 lines/mm plane original good to machine cut is carved diffraction grating and is replicated, and uses
Conventional replication process, using vacuum coating method, so that grating flute profile is transferred on filial generation diffraction grating, it is that original is carved plane
One layer of very thin oil lamella is deposited as motherboard as separating layer on vacuum coating equipment for diffraction grating, then one is deposited on oil lamella
Layer, with a thickness of 0.402um metallic reflection aluminium film 13, is then acted in epoxy resin 14 as bonding agent according to step 2 determination
It is lower that this layer of aluminium film is attached in daughter board plane diffraction grating substrate 40, to obtain daughter board plane diffraction grating.Wherein daughter board
40 material of plane diffraction grating substrate is devitrified glass or other low-expansion optical materials.
Step 4: ion etching processing is carried out to daughter board curved diffraction gratings, the Ar+ ion beam 16 determined according to step 3
Incidence angle φ 3 is 62 ° of progress ion etchings, can be the triangle cutting wheel at arc groove bottom by 16 lithography of Ar+ ion beam
43 etching of exterior feature is pointed at the triangle cutting wheel 41 of slot bottom, and key is the arc groove bottom etch rate ratio of grating cutting in addition to circle
Other cutting region etch rates except arc slot bottom are high, so that the cutting gullet part of diffraction grating be enable to remove.
After the completion of ion etching, a layer thickness is deposited finally as 0.065um aluminium film and plates the fluorination of thickness 0.025um deielectric-coating again
Magnesium, to improve ultraviolet wavelength diffraction efficiency.As shown in figure 15, it gives when 16 incidence angle φ 3 of Ar+ ion beam is 62 °,
Incisure density is the triangular groove shape and 16 etch rate relational graph of Ar+ ion beam of 600 lines/mm daughter board plane diffraction grating, figure
The Ar+ ion etching speed ratio of the circular arc portion 47 of grating triangle cutting is other other than circular arc portion 47 known in 15
Ion etching rate height in cutting region is both greater than 0.088um/min, and other cutting regions other than circular arc portion 47
Ion etching rate is equal to 0.088um/min.
By 16 lithography of Ar+ ion beam, the groove depth of daughter board plane diffraction grating is increased to by original 0.132um
0.167um, and other cutting region ion etching rates other than circular arc portion 47 are all 0.088um/min, simultaneously
It is remained unchanged during Ar+ 16 lithography of ion beam.So ion beam etching processes preceding blaze angle B7 and ion beam etching
Blaze angle B8 is still 6.4 ° and remains unchanged after processing.It is known by a person skilled in the art that in the constant situation of grating cutting blaze angle,
The absolute diffraction efficiency of grating increases as groove depth increases.To significantly improve the use diffraction of daughter board plane diffraction grating
The absolute diffraction efficiency that grade is -1 grade.As shown in figure 16, the planar diffraction of the present embodiment ion beam etching processing front and back is given
The diffraction rank of grating (etching density is 600 lines/mm) is -1 grade of diffraction efficiency curve figure, knows that ion beam etching adds in Figure 16
Absolutely diffraction efficiency improves 20% or so before and after work, and the absolute diffraction efficiency of highest increases to 69.94% by 49.04%, minimum diffraction
Efficiency increases to 47.84% by 28.16%.
Above embodiments are provided only for describing the purpose of the present invention, and are not intended to limit the scope of the invention.The present invention
Range be defined by the following claims.The various equivalent alterations and modifications for not departing from spirit and principles of the present invention and making,
It should all cover within the scope of the present invention.
Claims (11)
1. a kind of machine cut-ion beam etching prepares grating approach, characterized by the following steps:
Step 1: high density groove is provided in machine cut and the former quarter diffraction grating with small blaze angle, original carve diffraction grating
As motherboard diffraction grating, for replicating daughter board diffraction grating；
Step 2: determining the Coating Materials and thicknesses of layers for replicating daughter board diffraction grating；Determine ion beam in daughter board diffraction
The incidence angle of grating surface enables the cutting gullet part of replica grating to remove, the cutting with small blaze angle
Contoured surface most wideization；
Step 3: the former diffraction grating of carving to machine cut carries out daughter board diffraction-grating replica, and in duplication daughter board diffraction grating
Plated film in the process is processed for ion beam etching；
Step 4: daughter board diffraction grating in Ion beam incident angles, carries out ion beam etching processing, so that duplication diffraction light
It is removed the cutting gullet part of grid.
2. a kind of machine cut-ion beam etching according to claim 1 prepares grating approach, it is characterised in that: described
In step 1, at a constant temperature, precision machine tool is carried out using the arc-shaped diamond cutter of the preferred 0.5um~1.5um of nose radius
Machine cut.
3. a kind of machine cut-ion beam etching according to claim 1 prepares grating approach, it is characterised in that: described
In step 1, high density groove is preferably 500~600 lines/mm.
4. a kind of machine cut-ion beam etching according to claim 1 prepares grating approach, it is characterised in that: described
In step 1, blaze angle is less than 8 °.
5. a kind of machine cut-ion beam etching according to claim 1 prepares grating approach, it is characterised in that: described
In step 1, the cutting groove profile that original carves diffraction grating is triangular in shape.
6. a kind of machine cut-ion beam etching according to claim 1 prepares grating approach, it is characterised in that: described
In step 1, the substrate that original carves diffraction grating is metallic nickel or stainless steel.
7. a kind of machine cut-ion beam etching according to claim 1 prepares grating approach, it is characterised in that: described
In step 1, the surface face type that machine cut original carves diffraction grating is curved surface or plane.
8. a kind of machine cut-ion beam etching according to claim 1 prepares grating approach, it is characterised in that: described
In step 2, Coating Materials is metal film Al or deielectric-coating GaAs, and thicknesses of layers is 0.35~0.5um.
9. a kind of machine cut-ion beam etching according to claim 1 prepares grating approach, it is characterised in that: described
In step 2, incidence angle φ is preferably 52~62 °.
10. a kind of machine cut-ion beam etching according to claim 1 prepares grating approach, it is characterised in that: described
In step 3, ion beam is the ion of inert gas, and the ion of the inert gas includes He, Ar or Kr.
11. a kind of machine cut-ion beam etching according to claim 10 prepares grating approach, it is characterised in that: institute
Addition CCl2F2 or O2 gas in the ion of inert gas is stated, reaction equation ion etching is carried out.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1066512A (en) * | 1991-03-22 | 1992-11-25 | 株式会社岛津制作所 | Dry etching method and application thereof |
| US20050057789A1 (en) * | 2003-09-17 | 2005-03-17 | Hiroshi Funada | Method for forming fine concavo-convex patterns, method for producing optical diffraction structure, and method for copying optical diffraction structure |
| CN101441286A (en) * | 2008-12-22 | 2009-05-27 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing aspherical grating by copy technology |
| CN102368098A (en) * | 2011-10-27 | 2012-03-07 | 无锡英普林纳米科技有限公司 | Submicron diffraction grating with modulatable period and preparation method thereof |
| CN106950628A (en) * | 2017-03-31 | 2017-07-14 | 河南三阳光电有限公司 | Double arc bore hole 3D Imaging gratings and preparation method thereof |
-
2018
- 2018-10-12 CN CN201811190334.4A patent/CN109143437B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1066512A (en) * | 1991-03-22 | 1992-11-25 | 株式会社岛津制作所 | Dry etching method and application thereof |
| US20050057789A1 (en) * | 2003-09-17 | 2005-03-17 | Hiroshi Funada | Method for forming fine concavo-convex patterns, method for producing optical diffraction structure, and method for copying optical diffraction structure |
| CN101441286A (en) * | 2008-12-22 | 2009-05-27 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing aspherical grating by copy technology |
| CN102368098A (en) * | 2011-10-27 | 2012-03-07 | 无锡英普林纳米科技有限公司 | Submicron diffraction grating with modulatable period and preparation method thereof |
| CN106950628A (en) * | 2017-03-31 | 2017-07-14 | 河南三阳光电有限公司 | Double arc bore hole 3D Imaging gratings and preparation method thereof |
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