CN109143437B - Method for preparing grating by mechanical cutting-ion beam etching - Google Patents
Method for preparing grating by mechanical cutting-ion beam etching Download PDFInfo
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- CN109143437B CN109143437B CN201811190334.4A CN201811190334A CN109143437B CN 109143437 B CN109143437 B CN 109143437B CN 201811190334 A CN201811190334 A CN 201811190334A CN 109143437 B CN109143437 B CN 109143437B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1852—Manufacturing methods using mechanical means, e.g. ruling with diamond tool, moulding
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
Abstract
The invention discloses a method for preparing a grating by mechanical cutting-ion beam etching, which overcomes the influence of the reduction of the diffraction efficiency of the grating caused by the round corner of the tool point of a cutting tool in the process of manufacturing a diffraction grating with high-density grooves. The invention relates to a method for adopting ion beam etching on the basis of mechanical cutting, which comprises the steps of plating other reflecting films such as Al or GaAs films on the surface of a daughter board grating copied by a mechanically-cut mother board grating, selecting a proper ion beam incident angle to carry out ion beam etching, wherein the ion beam etching rate of the arc part at the bottom of an engraved groove is faster than that of the other parts of the engraved groove, and the arc can be removed, so that the arc is etched to form a sharp angle, the grating blaze angle is kept unchanged in the ion beam etching process, the depth of the engraved groove is increased, and the diffraction efficiency of the grating is improved. Compared with the general holographic-ion beam etching grating, the method for preparing the grating by mechanical cutting-ion beam etching provided by the invention has the advantages of easiness and convenience for realizing a small blazed angle, easiness and remarkable improvement on diffraction efficiency of a used waveband of the grating and the like.
Description
Technical Field
The invention relates to the technical field of manufacturing of diffractive optical elements (diffraction gratings) adopted in a spectral instrument, in particular to a method for preparing gratings by mechanical cutting-ion beam etching.
Background
The diffraction grating is an important light splitting element used in a spectrum instrument, and the diffraction efficiency of the diffraction grating is an important technical index. The grating has high diffraction efficiency, is beneficial to improving the signal to noise ratio of a spectral instrument and is also beneficial to improving the detection capability of the instrument on weak signals.
With the increasing importance and attention on environmental safety and protection of the country and the public, the method is particularly used for monitoring atmospheric pollutants and pollution sources; the method is used for meeting the requirements of corona discharge detection on safe operation in industries such as electric power, railways and the like; forest departments need early warning and prevention of forest fires; and in the fields of biomedicine, criminal investigation, public security culture and the like. The ultraviolet band imaging spectrum instrument has the advantages that other band imaging spectrum instruments cannot replace the ultraviolet band imaging spectrum instrument in the fields, however, light in an ultraviolet band is easily absorbed by the atmosphere, and meanwhile, the detection response of a photoelectric detector in the ultraviolet band is low, so that the development of the ultraviolet band imaging spectrum instrument in the fields is limited. Therefore, the method is a low-cost and obvious-effect way by improving the diffraction efficiency of the diffraction grating in the ultraviolet band imaging spectrometer. The groove of the diffraction grating is generally in a triangular groove shape, and a small blaze angle (less than 8 degrees) is required to meet the requirement of high diffraction efficiency of an ultraviolet band; the curved surface type diffraction grating has light dispersion and light condensation performance, is beneficial to reducing the number of optical elements and simplifying the constitution of an instrument; in addition, the ultraviolet wavelength is short, and the adoption of high-density scribed lines is beneficial to reducing the volume and the weight of the instrument.
A single precision machine tool is adopted for mechanical cutting, so that a good triangular groove can be cut, the roughness of grating lines is less than 2nm (rms), the error of a wave front is about 0.5um, and a small blaze angle (less than 8 ℃) can be accurately cut, but when the high-line-density diffraction grating is cut, the diffraction efficiency of the grating is obviously reduced because the tool nose of the arc tool has an arc (when the density of the cutting lines cut by the arc tool with the tool nose arc radius of 1um/2um is 600 lines/mm, the highest diffraction efficiency of a used waveband is only 49.04%), and the requirement of high diffraction efficiency of an ultraviolet waveband (240-400nm) cannot be met. By adopting the holographic-ion beam etching method, although the etching efficiency is high, the processing of the diffraction grating with a small blaze angle (less than 8 degrees) for the ion beam etching is difficult, and the etched triangular groove is irregular.
The invention provides a preparation method by mechanical cutting-ion beam etching, which comprises the steps of mechanically cutting an original etching diffraction grating (mother board diffraction grating) with good triangular groove shape and small blaze angle (smaller than 8 degrees) and high groove density (200 lines/mm or more), copying a daughter board diffraction grating, and finally etching the circular arc part at the bottom of a diffraction grating groove into a sharp angle in an ion beam etching mode while keeping the blaze angle of the grating unchanged, thereby increasing the groove depth and improving the diffraction efficiency of the grating.
Disclosure of Invention
The technical problem of the invention is solved: the defects of the prior art are overcome, and a mechanical cutting-ion beam etching preparation method is provided to overcome the defect that the diffraction efficiency of the existing precision mechanical cutting high groove density diffraction grating is low; the holographic-ion beam etching method has the advantages that the diffraction grating with a small blaze angle is difficult to etch, the triangular groove shape of the groove is irregular, and the like, the groove depth deeper than that of precision mechanical cutting can be obtained, the diffraction efficiency of the grating is improved, and the grating groove with a regular triangular groove shape and a smaller blaze angle than that of holographic-ion beam etching can be obtained.
The technical scheme provided by the invention is as follows: a method for preparing a grating by mechanical cutting-ion beam etching comprises the following steps:
mechanically cutting an original diffraction grating with high-density grooves and a small blaze angle, wherein the original diffraction grating is used as a mother board diffraction grating and is used for copying a daughter board diffraction grating;
secondly, determining a coating material and film thickness for copying the daughter board diffraction grating; determining the incident angle of the ion beam on the surface of the daughter board diffraction grating, so that the circular arc part at the bottom of the groove of the replica diffraction grating is eliminated, and the groove profile surface with a small blaze angle is widest;
thirdly, performing daughter board diffraction grating copying on the original diffraction grating which is mechanically cut, and coating a film in the process of copying the daughter board diffraction grating for ion beam etching processing;
and fourthly, carrying out ion beam etching processing on the daughter board diffraction grating under the condition of the ion beam incidence angle, so that the circular arc part at the bottom of the groove of the replica diffraction grating can be removed.
In the first step, under constant temperature, a circular arc diamond cutter with the cutter tip radius preferably being 0.5-1.5 um is adopted to carry out mechanical cutting on a precision machine tool, so that the time required for finishing ion beam etching in the fourth step can be shortened to the greatest extent.
In the first step, the high-density scribed line is preferably 500-600 lines/mm, so that the volume of the instrument can be reduced, and the high-density scribed line can be better applied to an ultraviolet band.
In the first step, the blaze angle is smaller than 8 degrees, which is obtained through a large number of repeated experiments, so that the high diffraction efficiency is achieved in the ultraviolet band.
In the first step, the groove type of the original diffraction grating is triangular, so that most of diffracted light energy can be transferred to a required diffraction order, and mechanical cutting is facilitated.
In the first step, the substrate of the original diffraction grating is made of metal nickel or stainless steel, so that the rigidity of the grating substrate is improved, and the increase of grooving errors caused by substrate deformation is avoided.
In the first step, the surface profile of the original-cut diffraction grating is mechanically cut into a curved surface or a plane so as to meet the requirements of different optical system structures.
In the second step, the coating material is a metal film Al or a dielectric film GaAs, and the thickness of the film layer is 0.35-0.5 um.
In the second step, the incidence angle phi is preferably 52-62 degrees, the ion beam etching time required for removing the arc part at the bottom of the groove is shortened, and the excessive thickness of the plated reflecting film is avoided.
In the third step, the ion beam is an ion of an inert gas, and the ion of the inert gas includes He, Ar, or Kr.
CCl2F2 or O2 gas is added into the ions of the inert gas to carry out reactive ion etching.
The principle of the invention is as follows: the basic principle of preparing the grating by using mechanical cutting-ion beam etching is as follows: firstly, mechanically cutting a groove of a high-density reticle grating with a good regular triangular groove shape and a small blaze angle (less than 8 degrees); and secondly, the daughter board diffraction grating is obtained by copying the motherboard diffraction grating to protect the motherboard diffraction grating, reduce the production cost and facilitate the ion etching. Because the bottom of the grating groove which is mechanically cut has an arc part, the depth of the grating groove is reduced, and the diffraction efficiency of the grating is obviously reduced; finally, through ion beam etching, under a proper ion beam incident angle, as the etching rate of the arc part at the bottom of the sub-plate diffraction grating etching groove is higher than that of other parts except the arc part, and the ion beam etching rates of other parts are the same, the arc can be well removed, so that the arc is etched to form a sharp angle, and meanwhile, the grating blaze angle is kept unchanged in the ion beam etching process, thereby increasing the groove etching depth and improving the grating diffraction efficiency.
Compared with the prior art, the invention has the advantages that:
(1) the invention overcomes the influence of the reduction of diffraction efficiency of the grating caused by the fact that the tool nose fillet of a diamond tool is mechanically cut by a precision machine tool in the process of manufacturing the diffraction grating. In the process of mechanically cutting the diffraction grating by a precision machine tool, because the tool tip of the diamond tool has an arc (the minimum radius of the arc is generally 0.5-3 um), the bottom of the cut triangular groove is in the shape of an arc. Especially when a diffraction grating with high density of grooves (groove density of 200-600 lines/mm) and small blaze angle (less than 8 °) is manufactured, the circular arc causes the groove depth to be significantly reduced, so that the diffraction efficiency of the grating is significantly reduced (when the groove density is 600 lines/mm, the highest diffraction efficiency of the blazed diffraction orders is only 49.04%).
(2) The invention relates to a method for adopting ion beam etching on the basis of mechanical cutting, which comprises the steps of plating Al films or GaAs films and other reflecting films on the surfaces of daughter board diffraction gratings copied by a mechanically-cut mother board diffraction grating, and selecting a proper ion beam incident angle for ion beam etching, wherein the ion beam etching rate of the arc part at the bottom of a groove of the daughter board diffraction grating is higher than that of the other parts except the arc, and the ion beam etching rates of the other parts are the same, so that the arc can be well removed, the arc is etched to form a sharp angle, and simultaneously, the grating blaze angle is kept unchanged in the ion beam etching process, thereby increasing the groove depth and improving the grating diffraction efficiency (the highest diffraction efficiency of the blaze diffraction order is increased to 71.85%). Compared with the general holographic-ion beam etching grating, the method for preparing the grating by mechanical cutting-ion beam etching provided by the invention has the advantages of easiness and convenience for realizing a small blazed angle (less than 8 degrees), easiness and remarkable improvement on diffraction efficiency of a used waveband of the grating and the like.
(3) The invention monitors the atmospheric pollutants and pollution sources; corona discharge detection for safe operation in industries such as electric power and railway; forest departments need early warning and prevention of forest fires; and the preparation technology of the diffraction grating required in the fields of biomedicine, criminal investigation, public security and cultural inspection and the like is very important.
Drawings
Fig. 1 is a basic schematic diagram of manufacturing a curved surface diffraction grating (etching density is 500 lines/mm) according to embodiment 1 of the present invention, in which 11 is an arc-shaped diamond cutter, 12 is a curved surface original-etched diffraction grating substrate, 13 is a metal reflective aluminum film, 14 is epoxy resin, 15 is a daughter board curved surface diffraction grating substrate, 16 is an Ar + ion beam, 17 is a triangular grooved profile at the bottom of an arc groove, and 18 is a triangular grooved profile at the bottom of a sharp corner groove. B1 is a blaze angle before ion beam etching processing, and B2 is a blaze angle after ion beam etching processing;
fig. 2 is a simulated diagram of the evolution of a triangular groove profile of a curved diffraction grating (with an etching density of 500 lines/mm) at an Ar + ion beam incident angle of 52 °, where 1 is a grating groove profile before ion etching, 2 is a grating groove profile after ion etching, phi is an Ar + ion beam incident angle, 4 is a metal reflective aluminum film thickness before etching, and 5 is a metal reflective aluminum film thickness after etching, according to embodiment 1 of the present invention;
fig. 3 is a graph showing a relationship between a triangular groove shape (before ion beam etching processing) of a daughter board curved surface diffraction grating (with an etching density of 500 lines/mm) and an ion etching rate at an Ar + ion beam 16 incidence angle of 52 °, where 3 is an arc portion of a triangular groove of the grating;
fig. 4 is a graph of diffraction efficiency of-1 order diffraction level of a daughter board curved surface diffraction grating (etching density of 500 lines/mm) before and after ion beam etching processing provided in embodiment 1 of the present invention;
fig. 5 is a basic schematic diagram of manufacturing a curved surface diffraction grating (the etching density is 550 lines/mm) according to embodiment 2 of the present invention, in which 19 is an arc-shaped diamond cutter, 20 is a curved surface original-etched diffraction grating substrate, 21 is a dielectric film GaAs, 14 is an epoxy resin, 23 is a daughter board curved surface diffraction grating substrate, 24 is a He + ion beam, 25 is a triangular grooved profile at the bottom of an arc groove, and 26 is a triangular grooved profile at the bottom of a sharp corner groove. B3 is a blaze angle before ion beam etching processing, and B4 is a blaze angle after ion beam etching processing;
fig. 6 is a simulated diagram of the evolution of the triangular groove profile of a curved diffraction grating (with an etching density of 550 lines/mm) at an incident angle of He + ion beam 24 of 60 °, where 6 is a diagram of the groove profile of the grating before ion etching, 7 is a diagram of the groove profile of the grating after ion etching, Φ 1 is an incident angle of He + ion beam, 8 is a thickness of a dielectric film GaAs before etching, and 9 is a thickness of the dielectric film GaAs after etching, according to embodiment 2 of the present invention;
fig. 7 is a graph showing a relationship between a triangular groove shape (before ion beam etching processing) of a daughter board curved surface diffraction grating (with an etching density of 550 lines/mm) and an ion etching rate at an incident angle of He + ion beam 24 of 60 ° according to embodiment 2 of the present invention, where 10 is an arc portion of a triangular groove of the grating;
fig. 8 is a graph showing-1 diffraction efficiency of a daughter board curved surface diffraction grating (with an etching density of 550 lines/mm) before and after He + ion beam etching processing according to embodiment 2 of the present invention;
fig. 9 is a basic schematic diagram of manufacturing a curved diffraction grating (with an etching density of 580 lines/mm) according to embodiment 3 of the present invention, in which 27 is an arc-shaped diamond cutter, 28 is a curved original-cut diffraction grating substrate, 21 is a dielectric film GaAs, 14 is an epoxy resin, 29 is a daughter board curved diffraction grating substrate, 30 is a mixed gas reactive ion beam of Ar and CCl2F2, 31 is a triangular notch profile at the bottom of an arc groove, and 32 is a triangular notch profile at the tip angle of the bottom of a groove. B5 is a blaze angle before ion beam etching processing, and B6 is a blaze angle after ion beam etching processing;
fig. 10 is a simulated diagram of the evolution of the triangular groove profile of a curved diffraction grating (with an etching density of 580 lines/mm) at an incidence angle of 59 ° of an Ar and CCl2F2 mixed gas reactive ion beam 30 according to embodiment 3 of the present invention, where 33 is a diagram of the grating groove profile before reactive ion etching, 34 is a diagram of the grating groove profile after reactive ion etching, Φ 2 is an incidence angle of He + ion beam, 35 is a thickness of GaAs of a dielectric film before etching, and 36 is a thickness of GaAs of the dielectric film after etching;
fig. 11 is a graph showing a relationship between a triangular groove shape (before reactive ion beam etching processing) of a daughter board curved diffraction grating (etching density of 580 lines/mm) and a reactive ion etching rate at an incidence angle of 59 ° of the mixed gas reactive ion beam 30 of Ar and CCl2F2 according to embodiment 3 of the present invention, where 37 is an arc portion of a triangular groove of the grating;
fig. 12 is a graph of diffraction efficiency of a daughter board curved surface diffraction grating (with an etching density of 580 lines/mm) with a diffraction order of-1 order before and after the mixed gas reaction ion beam etching processing of Ar and CCl2F2 provided in embodiment 3 of the present invention;
fig. 13 is a basic schematic diagram of manufacturing a planar diffraction grating (with an etching density of 600 lines/mm) according to embodiment 4 of the present invention, in which 38 is an arc-shaped diamond cutter, 39 is a planar original-engraved diffraction grating substrate, 13 is a metal film Al, 14 is epoxy resin, 40 is a daughter-plate planar diffraction grating substrate, 16 is an Ar + ion beam, 41 is a triangular engraved groove profile at the bottom of an arc groove, and 42 is a triangular engraved groove profile at the bottom of a sharp corner groove. B7 is a blaze angle before ion beam etching processing, and B8 is a blaze angle after ion beam etching processing;
fig. 14 is a simulated diagram of the evolution of the triangular groove profile of the planar diffraction grating (with an etching density of 600 lines/mm) at an Ar + ion beam 16 incidence angle of 62 ° according to embodiment 4 of the present invention, where 43 is a grating groove profile diagram before ion etching, 44 is a grating groove profile diagram after ion etching, Φ 3 is an Ar + ion beam incidence angle, 45 is a metal reflective aluminum film thickness before etching, and 46 is a metal reflective aluminum film thickness after etching;
fig. 15 is a graph showing a relationship between a triangular groove shape (before ion beam etching processing) of a daughter board plane diffraction grating (with an etching density of 600 lines/mm) and an ion etching rate at an Ar + ion beam 16 incidence angle of 62 ° according to embodiment 4 of the present invention, where 47 is an arc portion of a triangular groove of the grating;
fig. 16 is a diffraction efficiency curve diagram of a daughter board plane diffraction grating (with an etching density of 600 lines/mm) with a diffraction order of-1 order before and after Ar + ion beam etching processing according to embodiment 4 of the present invention.
Detailed Description
The invention is further described with reference to the following figures and specific examples.
The invention relates to a method for preparing a grating by mechanical cutting-ion beam etching, which comprises the following steps:
firstly, mechanically cutting an original-cut diffraction grating which is provided with high-density scribed lines (the scribed line density is 200-600 lines/mm) and small blaze angles (smaller than 8 degrees) by a precision machine tool as a mother board diffraction grating by adopting an arc-shaped diamond cutting tool with the tool tip radius of 0.5-2 um at a constant temperature, and copying a daughter board diffraction grating.
Simulating the surface change process of the notching profile of the ion etching daughter board diffraction grating by using special etching software, and determining that the coating material for copying the daughter board diffraction grating is a metal film and the thickness of the film layer is 0.2-0.5 um; and determining the incident angle phi of the ion beam on the macroscopic surface of the daughter board diffraction grating to be 45-65 degrees, so that the arc part of the bottom of the groove of the diffraction grating is removed, and the groove profile surface with a blazed angle is widest.
And thirdly, duplicating the original diffraction grating which is mechanically cut, and plating a metal film with the thickness of 0.2-0.5 um in the process of duplicating the daughter board diffraction grating for ion beam etching processing. The purpose of replication is: protecting the diffraction grating of the motherboard, reducing the production cost and facilitating the ion beam etching.
And fourthly, carrying out ion beam etching processing on the daughter board diffraction grating under the condition that the ion beam incident angle phi is 45-65 degrees, so that the arc part at the bottom of the groove of the diffraction grating is removed, the groove depth is increased, and the diffraction efficiency of the diffraction grating using the diffraction level is improved.
Specific embodiments of the present invention are described below.
Example 1: the grating preparation method comprises the steps of mechanical cutting and ion beam etching of the curved diffraction grating with the groove density of 500 lines/mm and the small blaze angle of 4.5 degrees. As shown in fig. 1.
The method comprises the following steps: according to the fact that the groove density is 500 lines/mm, the grating period is 2 microns, and the abrasion of the nicking tool in the actual cutting process is considered, so that the arc-shaped diamond cutting tool 11 with the tool tip radius of 1.5 microns is adopted to cut a small blaze angle of 4.5 degrees on the curved original-engraved diffraction grating substrate 12 to meet the high diffraction efficiency of an ultraviolet band (240-400 nm). Meanwhile, the device can work under the condition of keeping constant temperature, and the cutting precision of the nicking tool is prevented from being influenced by the fluctuation of temperature. After the curved surface original-etched diffraction grating is cut, carrying out inspection: the laser microscope of Japan Keyanshi company is adopted to check the groove shape and the grating period; inspecting the grating wavefront by using a Zygo interferometer; and (3) inspecting the diffraction efficiency of the grating by adopting a northern light century monochromator. And after the test is qualified, the diffraction grating is used as a motherboard diffraction grating, and the daughter board diffraction grating is prepared to be copied in the next step. Wherein the curved surface original-carved diffraction grating substrate 12 is made of nickel or stainless steel.
Step two: and (3) simulating the change process of the grooved profile surface of the diffraction grating of the Ar + ion beam etching daughter board by using special etching software. As shown in fig. 2, a simulation is given under the condition that the incident angle phi of the Ar + ion beam 16 is 52 degrees, by using a graph 1 of a grating groove profile before the Ar + ion beam etching processing, it can be known that the grating groove profile is a triangular groove profile 17 (indicated by thick black lines) at the bottom of an arc groove and the thickness 4 of a metal reflective aluminum film before the etching is 0.35um, after 4 minutes of simulated Ar + ion beam etching, the graph 2 of the grating groove profile after the ion etching processing is obtained as an optimal grating groove profile simulation graph, and from the graph 2, it can be known that the grating groove profile is a triangular groove profile 18 (indicated by thick black lines) at the bottom of a sharp angle groove and the thickness 5 of the metal reflective aluminum film after the etching is 0.125 um. The thickness of a metal-plated reflecting aluminum film required by the replica daughter board diffraction grating is determined to be 0.35um through simulation, and the optimal ion beam incident angle phi of the Ar + ion beam 16 is also determined to be 52 degrees. Wherein the abscissa is a grating groove profile X direction coordinate point, the ordinate is a grating groove profile Y direction coordinate point, and the grating period is 2 um.
Step three: and (2) copying the curved original-surface diffraction grating with the mechanically cut groove density of 500 lines/mm, transferring the grating groove shape to a progeny diffraction grating by adopting a traditional copying process and utilizing a vacuum coating method, wherein the original-surface diffraction grating is used as a mother board, an ultrathin oil film layer is evaporated and plated on a vacuum coating machine to be used as a separation layer, a metal reflecting aluminum film 13 with the thickness of 0.35um determined according to the step two is evaporated and plated on the oil film layer, and the aluminum film is attached to a daughter board curved surface diffraction grating substrate 15 under the action of epoxy resin 14 serving as an adhesive, so that the daughter board curved surface diffraction grating is obtained. The material of the daughter board curved surface diffraction grating substrate 15 is microcrystalline glass or other optical materials with low expansion coefficients.
Step four: and (2) carrying out ion etching processing on the daughter board curved surface diffraction grating, carrying out ion etching according to the condition that the incidence angle phi of the Ar + ion beam 16 determined in the step three is 52 degrees, and etching the triangular groove profile 17 at the bottom of the arc groove into the triangular groove profile 18 at the bottom of the sharp-angled groove through the Ar + ion beam 16 etching processing. As shown in fig. 3, a graph showing the relationship between the triangular groove shape of the daughter board curved surface diffraction grating with a groove density of 500 lines/mm and the etching rate of the Ar + ion beam 16 under the condition that the incident angle phi of the Ar + ion beam 16 is 52 degrees is given, and it can be known in fig. 3 that the etching rate of the Ar + ions of the circular arc part 3 of the triangular groove of the grating is higher than that of the other groove areas except the circular arc part 3 by more than 0.11um/min, and the ion etching rates of the other groove areas except the circular arc part 3 are equal to 0.11 um/min.
After Ar + ion beam 16 etching processing, the groove depth of the daughter board curved surface diffraction grating is increased from original 0.102um to 0.137um, and the ion etching rate of other groove areas except the circular arc part 3 is 0.11um/min, and simultaneously, the ion etching rate is kept unchanged in the Ar + ion beam 16 etching processing process. The blaze angle B1 before the ion beam etching process and the blaze angle B2 after the ion beam etching process are still 4.5 degrees. As is known to those skilled in the art, the absolute diffraction efficiency of a grating increases with increasing groove depth, with a constant groove blaze angle of the grating. Therefore, the absolute diffraction efficiency of the daughter board curved surface diffraction grating with the diffraction order of-1 order is remarkably improved. As shown in fig. 4, a graph showing diffraction efficiency of-1 st order diffraction orders of curved diffraction gratings (with an etching density of 500 lines/mm) before and after ion beam etching processing in the present embodiment is shown, and it can be seen in fig. 4 that the absolute diffraction efficiency before and after ion beam etching processing is improved by about 11%, the highest absolute diffraction efficiency is increased from 60.5% to 71.85%, and the lowest diffraction efficiency is increased from 40.6% to 51.4%.
Example 2: the grating preparation method comprises the steps of mechanical cutting and ion beam etching of the curved diffraction grating with the groove density of 550 lines/mm and the small blaze angle of 5.4 degrees.
The method comprises the following steps: according to the fact that the groove density is 550 lines/mm, the grating period is 1.8 microns, and the abrasion of the engraving knife in the actual cutting process is considered, so that the arc-shaped diamond cutting knife 19 with the knife tip radius of 1.0 micron is adopted to cut a small blaze angle of 5.4 degrees on the curved original engraving diffraction grating substrate 20 so as to meet the high diffraction efficiency of an ultraviolet band (250-500 nm). Meanwhile, the device can work under the condition of keeping constant temperature, and the cutting precision of the nicking tool is prevented from being influenced by the fluctuation of temperature. After the curved surface original-etched diffraction grating is cut, carrying out inspection: the laser microscope of Japan Keyanshi company is adopted to check the groove shape and the grating period; inspecting the grating wavefront by using a Zygo interferometer; and (3) inspecting the diffraction efficiency of the grating by adopting a northern light century monochromator. And after the test is qualified, the diffraction grating is used as a motherboard diffraction grating, and the daughter board diffraction grating is prepared to be copied in the next step. Wherein the curved original-carved diffraction grating substrate 20 is made of nickel or stainless steel.
Step two: and (3) simulating the change process of the He + ion beam etching daughter board diffraction grating grooving profile surface by using special etching software. As shown in fig. 6, a simulation is given under the condition that the incident angle Φ 1 of He + ion beam 24 is 60 °, and by the graph 6 of the grating groove profile before He + ion beam etching processing, it can be known that the grating groove profile at this time is the triangular notch profile 25 (indicated by the thick black line) at the bottom of the arc groove and the thickness 8 of the dielectric film GaAs before etching is 0.50um, and after 5.8 minutes of simulated He + ion beam etching, the graph 7 of the grating groove profile after ion etching processing is the simulation graph of the optimal grating groove profile, and it can be known that the grating groove profile at this time is the triangular notch profile 26 (indicated by the thick black line) at the bottom of the sharp corner groove and the thickness 9 of the dielectric film GaAs after etching is 0.295 um. The GaAs thickness of the replica daughter board diffraction grating needing to be plated with a dielectric film is determined to be 0.50um through simulation, and meanwhile, the optimal ion beam incident angle phi 1 of the He + ion beam 24 is also determined to be 60 degrees. Wherein the abscissa is a grating groove profile X-direction coordinate point, the ordinate is a grating groove profile Y-direction coordinate point, and the grating period is 1.8 um.
Step three: and (2) copying the curved surface original-etched diffraction grating with the groove density of 550 lines/mm which is mechanically cut, transferring the grating groove shape to a descendant diffraction grating by adopting a traditional copying process and utilizing a vacuum coating method, wherein the original-etched curved surface diffraction grating is used as a mother board, an extremely thin oil film layer is evaporated and plated on a vacuum coating machine to be used as a separation layer, a medium film GaAs material 21 with the thickness of 0.50um determined according to the step two is evaporated and plated on the oil film layer, and then the GaAs film is attached to the daughter board curved surface diffraction grating substrate 23 under the action of epoxy resin 14 serving as an adhesive, so that the daughter board curved surface diffraction grating is obtained. Wherein the daughter board curved surface diffraction grating substrate 23 is made of microcrystalline glass or other optical materials with low expansion coefficients.
Step four: and (2) carrying out ion etching processing on the daughter board curved surface diffraction grating, carrying out ion etching according to the condition that the incidence angle phi 1 of the He + ion beam 24 determined in the step three is 60 degrees, and etching the triangular groove profile 25 at the bottom of the arc groove into the triangular groove profile 26 at the bottom of the sharp-angled groove through the He + ion beam 24 etching processing. After ion etching is finished, an aluminum film with the thickness of 0.08um is evaporated and a dielectric film magnesium fluoride with the thickness of 0.025um is plated finally to improve the diffraction efficiency of ultraviolet wavelength. As shown in fig. 7, a graph showing the relationship between the etching rate of He + ion beam 24 and the triangular groove shape of the daughter board curved diffraction grating with a groove density of 550 lines/mm under the condition that the incident angle Φ 1 of He + ion beam 24 is 60 °, it can be seen from fig. 7 that the He + ion etching rate of the circular arc portion 10 of the triangular groove of the grating is higher than the ion etching rate of the other groove regions except for the circular arc portion 10 by more than 0.03um/min, and the ion etching rate of the other groove regions except for the circular arc portion 3 is equal to 0.03 um/min.
Through He + ion beam 24 etching processing, the groove depth of the daughter board curved surface diffraction grating is increased from original 0.122um to 0.146um, and the ion etching rates of other groove areas except the circular arc part 10 are all 0.03um/min, and meanwhile, the ion etching rates are kept unchanged in the He + ion beam 24 etching processing process. The blaze angle B3 before the ion beam etching process and the blaze angle B4 after the ion beam etching process are still 5.4 degrees. As is known to those skilled in the art, the absolute diffraction efficiency of a grating increases with increasing groove depth, with a constant groove blaze angle of the grating. Therefore, the absolute diffraction efficiency of the daughter board curved surface diffraction grating with the diffraction order of-1 order is remarkably improved. As shown in fig. 8, a graph showing diffraction efficiency of-1 st order diffraction orders of curved diffraction gratings (with an etching density of 550 lines/mm) before and after ion beam etching processing in this embodiment is shown, and it can be seen in fig. 8 that the absolute diffraction efficiency before and after ion beam etching processing is improved by about 11%, the highest absolute diffraction efficiency is increased from 56.64% to 68.98%, and the lowest diffraction efficiency is increased from 31.82% to 41.03%.
Example 3: the grating preparation method is characterized in that the grating is prepared by mechanical cutting-ion beam etching of the curved diffraction grating with the groove density of 580 lines/mm and the small blaze angle of 4.8 degrees.
The method comprises the following steps: according to the fact that the groove density is 580 lines/mm, the grating period is 1.7 microns, and the abrasion of the nicking tool in the actual cutting process is considered, so that the arc-shaped diamond cutting tool 27 with the tool nose radius of 1.0 micron is adopted to cut a small blaze angle of 4.8 degrees on the curved original-surface diffraction grating substrate 28 so as to meet the high diffraction efficiency of an ultraviolet band (220-400 nm). Meanwhile, the device can work under the condition of keeping constant temperature, and the cutting precision of the nicking tool is prevented from being influenced by the fluctuation of temperature. After the curved surface original-etched diffraction grating is cut, carrying out inspection: the laser microscope of Japan Keyanshi company is adopted to check the groove shape and the grating period; inspecting the grating wavefront by using a Zygo interferometer; and (3) inspecting the diffraction efficiency of the grating by adopting a northern light century monochromator. And after the test is qualified, the diffraction grating is used as a motherboard diffraction grating, and the daughter board diffraction grating is prepared to be copied in the next step. Wherein the curved original-cut diffraction grating substrate 28 is made of nickel or stainless steel.
Step two: and (3) simulating the change process of the grooved profile surface of the diffraction grating of the daughter board etched by the mixed gas reaction ion beam of Ar and CCl2F2 by using special etching software. As shown in fig. 10, a simulation is given in the case where the incident angle Φ 2 of the mixed gas reactive ion beam of Ar and CCl2F2 is 59 °, and the grating groove profile 33 before the etching processing by the mixed gas reactive ion beam of Ar and CCl2F2 shows that the grating groove profile is the triangular notch profile 31 (indicated by thick black lines) of the circular groove bottom and the thickness 35 of the dielectric film GaAs before the etching is 0.35um, and after 6.2 minutes of the simulation of the etching by the mixed gas reactive ion beam of Ar and CCl2F2, the grating groove profile 34 after the ion etching processing is the optimum grating groove profile simulation diagram, and it is shown that the triangular notch profile 32 (indicated by thick black lines) of the grating groove profile at this time is the sharp groove bottom and the thickness 36 of the dielectric film GaAs after the etching is 0.152 um. The thickness of GaAs to be coated with a dielectric film is determined to be 0.35um by simulation, and the optimal ion beam incident angle phi 2 of the mixed gas reaction ion beam 30 of Ar and CCl2F2 is also determined to be 59 degrees. Wherein the abscissa is a grating groove profile X-direction coordinate point, the ordinate is a grating groove profile Y-direction coordinate point, and the grating period is 1.7 um.
Step three: and (2) copying the curved original-surface diffraction grating with the mechanically-cut groove density of 580 lines/mm, transferring the grating groove shape to a descendant diffraction grating by adopting a traditional copying process and utilizing a vacuum coating method, wherein the original-surface diffraction grating is used as a mother board, an ultrathin oil film layer is evaporated on a vacuum coating machine to be used as a separation layer, a dielectric film GaAs material 21 with the thickness of 0.35um determined according to the step two is evaporated on the oil film layer, and the dielectric film GaAs is attached to a daughter board curved surface diffraction grating substrate 29 under the action of epoxy resin 14 serving as an adhesive, so that the daughter board curved surface diffraction grating is obtained. Wherein the daughter board curved surface diffraction grating substrate 29 is made of microcrystalline glass or other optical materials with low expansion coefficients.
Step four: and (2) performing ion etching processing on the daughter board curved surface diffraction grating, performing reactive ion etching according to the condition that the incidence angle phi 2 of the Ar and CCl2F2 mixed gas reactive ion beam 30 determined in the step three is 59 degrees, and etching and processing the triangular groove profile 31 at the bottom of the arc groove into the triangular groove profile 32 at the bottom of the sharp-angled groove through the Ar and CCl2F2 mixed gas reactive ion beam 30, wherein the key point is that the etching rate of the bottom of the arc groove of the grating groove is higher than that of other groove regions except the bottom of the arc groove, so that the arc part at the bottom of the groove of the diffraction grating can be removed. After ion etching is finished, an aluminum film with the thickness of 0.08um is evaporated and a dielectric film magnesium fluoride with the thickness of 0.025um is plated finally to improve the diffraction efficiency of ultraviolet wavelength. As shown in fig. 3, a graph is shown of the relationship between the triangular groove shape of the daughter board curved diffraction grating with a reticle density of 580 lines/mm and the etching rate of the mixed gas reactive ion beam 30 of Ar and CCl2F2 under the condition that the incident angle Φ 2 of the mixed gas reactive ion beam 30 of Ar and CCl2F2 is 59 °, and it can be seen in fig. 11 that the reactive ion etching rate of the mixed gas reactive ion of Ar and CCl2F2 of the circular arc portion 37 of the triangular grooves of the grating is higher than that of the other groove regions except for the circular arc portion 37 by more than 0.12um/min, and the reactive ion etching rate of the other groove regions except for the circular arc portion 37 is equal to 0.12 um/min.
After the mixed gas reactive ion beam 30 of Ar and CCl2F2 is used for etching, the groove depth of the daughter board curved surface diffraction grating is increased from the original 0.102um to 0.137um, the ion etching rate of other groove areas except the circular arc part 37 is 0.12um/min, and simultaneously, the ion etching rate is kept unchanged in the etching process of the mixed gas reactive ion beam 30 of Ar and CCl2F 2. The blaze angle B5 before the ion beam etching process and the blaze angle B6 after the ion beam etching process are still 4.8 degrees. As is known to those skilled in the art, the absolute diffraction efficiency of a grating increases with increasing groove depth, with a constant groove blaze angle of the grating. Therefore, the absolute diffraction efficiency of the daughter board curved surface diffraction grating with the diffraction order of-1 order is remarkably improved. As shown in fig. 12, a graph showing the diffraction efficiency of-1 order diffraction orders of curved diffraction gratings (with an etching density of 580 lines/mm) before and after the reactive ion beam etching processing of the mixed gas of Ar and CCl2F2 in this embodiment is shown, and it can be seen in fig. 12 that the absolute diffraction efficiency before and after the reactive ion beam etching processing is improved by about 12%, the highest absolute diffraction efficiency is increased from 56.82% to 69.42%, and the lowest diffraction efficiency is increased from 34.86% to 45.04%.
Example 4: the grating preparation method comprises the steps of mechanical cutting and ion beam etching of the curved diffraction grating with the groove density of 600 lines/mm and the small blaze angle of 6.4 degrees.
The method comprises the following steps: according to the fact that the groove density is 600 lines/mm, the grating period is 1.67 mu m, abrasion of the nicking tool in the actual cutting process is considered, and the influence of the arc of the tool tip on diffraction efficiency is deepened, so that the arc-shaped diamond cutting tool 38 with the radius range of the tool tip being 0.5-1 mu m is adopted to cut a small blaze angle of 6.4 degrees on the original plane nicked diffraction grating substrate 39 so as to meet the high diffraction efficiency of an ultraviolet band (300 plus 500 nm). Meanwhile, the device can work under the condition of keeping constant temperature, and the cutting precision of the nicking tool is prevented from being influenced by the fluctuation of temperature. After the plane original-etching diffraction grating is cut, carrying out inspection: the laser microscope of Japan Keyanshi company is adopted to check the groove shape and the grating period; inspecting the grating wavefront by using a Zygo interferometer; and (3) inspecting the diffraction efficiency of the grating by adopting a northern light century monochromator. And after the test is qualified, the diffraction grating is used as a motherboard diffraction grating, and the daughter board diffraction grating is prepared to be copied in the next step. Wherein the material of the plane original-carved diffraction grating substrate 39 is nickel or stainless steel.
Step two: and (3) simulating the change process of the grooved profile surface of the diffraction grating of the Ar + ion beam etching daughter board by using special etching software. As shown in fig. 14, a simulation is given under the condition that the incident angle Φ of the Ar + ion beam 16 is 62 °, and by processing the front grating groove profile 43 by the Ar + ion beam etching, it is known that the grating groove profile is the triangular notch profile 41 (indicated by thick black lines) at the bottom of the arc groove and the thickness 45 of the metal reflective aluminum film before etching is 0.402um, and after 4 minutes of simulated Ar + ion beam etching, the grating groove profile 44 after ion etching processing is obtained as an optimum grating groove profile simulation diagram, and it is known that the grating groove profile is the triangular notch profile 42 (indicated by thick black lines) at the bottom of the sharp corner groove and the thickness 46 of the metal reflective aluminum film after etching is 0.212 um. The thickness of a metal-plated reflecting aluminum film required by the replica daughter board diffraction grating is determined to be 0.402um through simulation, and the optimal ion beam incident angle phi of the Ar + ion beam 16 is also determined to be 62 degrees. Wherein the abscissa is a grating groove profile X direction coordinate point, the ordinate is a grating groove profile Y direction coordinate point, and the grating period is 1.67 um.
Step three: and (2) copying the mechanically cut plane original-engraved diffraction grating with the groove density of 600 lines/mm, transferring the grating groove shape to a progeny diffraction grating by adopting a traditional copying process and utilizing a vacuum coating method, wherein the original-engraved plane diffraction grating is used as a mother board, an extremely thin oil film layer is evaporated on a vacuum coating machine to be used as a separation layer, a metal reflecting aluminum film 13 with the thickness of 0.402um determined according to the step two is evaporated on the oil film layer, and the aluminum film is attached to a daughter board plane diffraction grating substrate 40 under the action of epoxy resin 14 serving as an adhesive, so that the daughter board plane diffraction grating is obtained. Wherein the daughter board plane diffraction grating substrate 40 is made of microcrystalline glass or other optical materials with low expansion coefficient.
Step four: and (2) carrying out ion etching processing on the daughter board curved surface diffraction grating, carrying out ion etching according to the condition that the incidence angle phi 3 of the Ar + ion beam 16 determined in the step three is 62 degrees, and etching the triangular grooving profile 43 at the bottom of the arc groove into the triangular grooving wheel 41 at the bottom of the sharp angle groove through the Ar + ion beam 16 etching processing. After ion etching is finished, an aluminum film with the thickness of 0.065um is evaporated and a dielectric film magnesium fluoride with the thickness of 0.025um is plated, so that the ultraviolet wavelength diffraction efficiency is improved. As shown in fig. 15, which shows a graph of the relationship between the triangular groove shape of the daughter board plane diffraction grating with a groove density of 600 lines/mm and the etching rate of the Ar + ion beam 16 under the condition that the incident angle Φ 3 of the Ar + ion beam 16 is 62 °, it can be known in fig. 15 that the Ar + ion etching rate of the circular arc portion 47 of the triangular groove of the grating is higher than the ion etching rates of the other groove regions except the circular arc portion 47 by more than 0.088um/min, and the ion etching rates of the other groove regions except the circular arc portion 47 are equal to 0.088 um/min.
After the etching processing of the Ar + ion beam 16, the groove depth of the daughter board plane diffraction grating is increased from the original 0.132um to 0.167um, and the ion etching rates of other groove areas except the circular arc part 47 are all 0.088um/min, and simultaneously, the ion etching rates are kept unchanged in the etching processing process of the Ar + ion beam 16. The blaze angle B7 before the ion beam etching process and the blaze angle B8 after the ion beam etching process are still 6.4 degrees. As is known to those skilled in the art, the absolute diffraction efficiency of a grating increases with increasing groove depth, with a constant groove blaze angle of the grating. Thereby obviously improving the absolute diffraction efficiency of the daughter board plane diffraction grating with the diffraction order of-1. As shown in fig. 16, a graph of diffraction efficiency of-1 st order of the plane diffraction grating (with an etching density of 600 lines/mm) before and after ion beam etching processing in this embodiment is shown, and it can be seen in fig. 16 that the absolute diffraction efficiency before and after ion beam etching processing is improved by about 20%, the highest absolute diffraction efficiency is increased from 49.04% to 69.94%, and the lowest diffraction efficiency is increased from 28.16% to 47.84%.
The above examples are provided for the purpose of describing the present invention only, and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims. Various equivalent substitutions and modifications can be made without departing from the spirit and principles of the invention, and are intended to be within the scope of the invention.
Claims (9)
1. A method for preparing a grating by mechanical cutting-ion beam etching is characterized in that: the method comprises the following steps:
mechanically cutting an original diffraction grating with high-density grooves and a small blaze angle, wherein the original diffraction grating is used as a mother board diffraction grating and is used for copying a daughter board diffraction grating;
secondly, determining a coating material and film thickness for copying the daughter board diffraction grating; determining the incident angle of the ion beam on the surface of the daughter board diffraction grating, so that the circular arc part at the bottom of the groove of the replica diffraction grating is eliminated, and the groove profile surface with a small blaze angle is widest;
thirdly, performing daughter board diffraction grating copying on the original diffraction grating which is mechanically cut, and coating a film in the process of copying the daughter board diffraction grating for ion beam etching processing;
step four, ion beam etching processing is carried out on the daughter board diffraction grating under the condition of ion beam incidence angle, so that the circular arc part at the bottom of the groove bottom of the replica diffraction grating can be removed
In the first step, the blaze angle is less than 8 degrees;
in the first step, the groove type of the original diffraction grating is triangular.
2. The method for preparing the grating by mechanical cutting-ion beam etching according to claim 1, wherein the method comprises the following steps: in the first step, a circular arc diamond cutting tool with the tool tip radius of 0.5-1.5 um is preferably adopted to perform mechanical cutting of the precision machine tool at a constant temperature.
3. The method for preparing the grating by mechanical cutting-ion beam etching according to claim 1, wherein the method comprises the following steps: in the first step, the high-density scribed line is preferably 500-600 lines/mm.
4. The method for preparing the grating by mechanical cutting-ion beam etching according to claim 1, wherein the method comprises the following steps: in the first step, the substrate of the original diffraction grating is metal nickel or stainless steel.
5. The method for preparing the grating by mechanical cutting-ion beam etching according to claim 1, wherein the method comprises the following steps: in the first step, the surface profile of the original-cut diffraction grating is mechanically cut into a curved surface or a plane.
6. The method for preparing the grating by mechanical cutting-ion beam etching according to claim 1, wherein the method comprises the following steps: in the second step, the coating material is a metal film Al or a dielectric film GaAs, and the thickness of the film layer is 0.35-0.5 um.
7. The method for preparing the grating by mechanical cutting-ion beam etching according to claim 1, wherein the method comprises the following steps: in the second step, the incident angle phi is preferably 52-62 degrees.
8. The method for preparing the grating by mechanical cutting-ion beam etching according to claim 1, wherein the method comprises the following steps: in the third step, the ion beam is an ion of an inert gas, and the ion of the inert gas includes He, Ar, or Kr.
9. The method for preparing the grating by mechanical cutting-ion beam etching as claimed in claim 8, wherein: CCl2F2 or O2 gas is added into the ions of the inert gas to carry out reactive ion etching.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1066512A (en) * | 1991-03-22 | 1992-11-25 | 株式会社岛津制作所 | Dry etching method and application thereof |
| CN101441286A (en) * | 2008-12-22 | 2009-05-27 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing aspherical grating by copy technology |
| CN102368098A (en) * | 2011-10-27 | 2012-03-07 | 无锡英普林纳米科技有限公司 | Submicron diffraction grating with modulatable period and preparation method thereof |
| CN106950628A (en) * | 2017-03-31 | 2017-07-14 | 河南三阳光电有限公司 | Double arc bore hole 3D Imaging gratings and preparation method thereof |
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| US7245406B2 (en) * | 2003-09-17 | 2007-07-17 | Dai Nippon Printing Co., Ltd. | Method for forming fine concavo-convex patterns, method for producing optical diffraction structure, and method for copying optical diffraction structure |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1066512A (en) * | 1991-03-22 | 1992-11-25 | 株式会社岛津制作所 | Dry etching method and application thereof |
| CN101441286A (en) * | 2008-12-22 | 2009-05-27 | 中国科学院长春光学精密机械与物理研究所 | Method for manufacturing aspherical grating by copy technology |
| CN102368098A (en) * | 2011-10-27 | 2012-03-07 | 无锡英普林纳米科技有限公司 | Submicron diffraction grating with modulatable period and preparation method thereof |
| CN106950628A (en) * | 2017-03-31 | 2017-07-14 | 河南三阳光电有限公司 | Double arc bore hole 3D Imaging gratings and preparation method thereof |
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