CN208399717U - A kind of manufacture system of wire-grid polarizer - Google Patents
A kind of manufacture system of wire-grid polarizer Download PDFInfo
- Publication number
- CN208399717U CN208399717U CN201721817549.5U CN201721817549U CN208399717U CN 208399717 U CN208399717 U CN 208399717U CN 201721817549 U CN201721817549 U CN 201721817549U CN 208399717 U CN208399717 U CN 208399717U
- Authority
- CN
- China
- Prior art keywords
- wire
- grid polarizer
- photoetching
- reflecting mirror
- grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Polarising Elements (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The utility model discloses a kind of manufacture systems of wire-grid polarizer, including coating machine, photoetching glue spreader, PECVD device, dry etching machine, ion bean etcher, Holographical photoetching system, and the optical alignment device being arranged in conjunction with the Holographical photoetching system, wiregrating is successively manufactured by the way of stacking etching, using holographic lithography method layer-by-layer preparation photoresist mask, and mask transfer is realized using ion beam etching method, and the grating since the second layer is aligned with the grating of first layer using optics moire method, manufacture the wiregrating of high aspect ratio structure.
Description
Technical field
The utility model relates to Wire grid polarizer technology fields, are more precisely related to a kind of manufacture system of wire-grid polarizer
System.
Background technique
Polarizer is widely used in optical element and optoelectronic component, is used to generate and examine linearly polarized light, and partially
The performance quality of vibration device directly affects the performance of above-mentioned optical element and optoelectronic component.The realization of polarizer can be divided into birefringent
Crystal, polarization beam splitter, polymeric membrane and wiregrating etc., wherein wire-grid polarizer is a kind of novel polarizer.Wire grid polarization
Device includes diffraction grating and substrate, and diffraction grating is shorter than the spacing parallelly distribute on of transmitted light wavelength, i.e. wiregrating week on substrate
Phase is less than the wavelength of incident light.In the light of ray grid polarizer, the wide part parallel with wiregrating direction is reflected, with wiregrating side
To vertical wide fractional transmission.Wire-grid polarizer have it is small in size, compact-sized, be easily integrated, be insensitive to incidence angle
Feature, there are wide application prospects.In order to improve the performance of wire-grid polarizer, need wiregrating that there is high aspect ratio structure, i.e.,
The groove depth of wiregrating is greater than its period.Existing wire-grid polarizer processing method mainly includes the following three types:
1, electron-beam direct writing, the resolution ratio of electron-beam direct writing can reach several nanometers, can guarantee the high-precision of mask,
But there are two main problems: firstly, high-power electron beam has scattering, approach effect is obvious, the secondary ion meeting generated
Cause resolution ratio to decline, is unfavorable for making the feature structure of high-aspect-ratio；Secondly, processing efficiency is low for electron-beam direct writing, equipment is high
It is expensive.After electron-beam direct writing goes out grating mask figure, using chlorine-based gas reactive ion etching, by grating mask pattern transfer
Onto metallic diaphragm.
2, holographic interference photoetching, holographic interference photoetching technique are one of the main means of fabrication cycle structure graph, tool
Have the advantages that high-resolution, precision are high, it may be convenient to realize large area batch making.Grating mask figure is carved in holographic optical
After, it, will be in grating mask pattern transfer to metallic diaphragm using chlorine-based gas reactive ion etching.
3, nanometer embossing, nano impression have the characteristics that high resolution, Ultra Low Cost and high production rate, but because of its category
In contact pattern transfer process, the production of required nano-imprint stamp still needs to rely on electron-beam direct writing and holography is dry
Relate to the technologies such as photoetching.By nano impression, after obtaining grating mask figure, using chlorine-based gas reactive ion etching, by light
Grid mask graph is transferred on metallic diaphragm.
To sum up, there is larger difficulty when realizing high aspect ratio structure in existing wire-grid polarizer processing method, can not
Cost is controlled while guaranteeing precision, it is difficult to realize the manufacture of large area wire-grid polarizer.In addition, above-mentioned three kinds of methods are adopted
With chlorine-based gas reactive ion etching, production security cannot be ensured.
Guarantee to control cost while precision correspondingly, existing wire-grid polarizer system of processing is also unable to satisfy, it can not
Realize the manufacture of large area wire-grid polarizer.
Utility model content
The purpose of this utility model is to provide a kind of manufacture systems of wire-grid polarizer, for manufacturing high aspect ratio structure
Wiregrating.
Another of the utility model is designed to provide a kind of manufacturing method of wire-grid polarizer, using stacking etching
Mode successively manufactures wiregrating, realizes using holographic lithography method layer-by-layer preparation photoresist mask, and using ion beam etching method
Mask transfer, and be directed at the grating since the second layer with the grating of first layer using optics moire method, it makes
Make the wiregrating of high aspect ratio structure.
In order to achieve the above object, the utility model provides a kind of manufacture system of wire-grid polarizer, including coating machine, light
Carve glue spreader, PECVD device, dry etching machine, ion bean etcher, Holographical photoetching system and with the holographic lithography system
System combines the optical alignment device of setting.
Preferably, the optical alignment device includes a beam splitter, one first reflecting mirror, one second reflecting mirror, one first
The laser of lens, one second lens, a micro-displacement device and a phase control device, the incident optical alignment device is described
Beam splitter is divided into two bundles, and is reflected respectively by first reflecting mirror and second reflecting mirror, then respectively through first lens
Interference fringe, the micro-displacement device and first reflection are formed in the substrate surface being produced with second lens
Mirror connection, and the micro-displacement device is electrically connected with institute rheme phase control device.
Compared with prior art, a kind of the advantages of manufacture system of wire-grid polarizer disclosed by the utility model, is: adopting
With multiple holographic exposure, multiple ibl, the production of visible light wave range wire-grid polarizer is realized, is taken full advantage of complete
The submicron resolution of interference lithography and the anisotropy of ion beam etching are ceased, manufacturing process is more safe and reliable；Utilize optics
Moire fringe technique carries out Moire fringe alignment, ensure that the consistency of the screen periods and orientation between multiple holographic exposure；It adopts
It is performed etching and is polished with ion bean etcher, simplify manufacture system.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, it is also possible to obtain other drawings based on these drawings.
It is as shown in Figure 1 a kind of manufacturing method flow chart of wire-grid polarizer of the utility model, and what is manufactured is two layer lines
Grid polarizer.
Be illustrated in figure 2 a kind of manufacturing method flow chart of wire-grid polarizer of the utility model, and manufacture be three layers and
Three layers or more of wire-grid polarizer.
It is illustrated in figure 3 a kind of manufacturing method schematic diagram of wire-grid polarizer of the utility model, and what is manufactured is two layer lines
Grid polarizer.
The structure for being illustrated in figure 4 substrate in step (8) in a kind of manufacturing method of wire-grid polarizer of the utility model is shown
It is intended to.
It is illustrated in figure 5 the structural representation of optical alignment device in a kind of manufacture system of wire-grid polarizer of the utility model
Figure.
Specific embodiment
As shown in Figure 1, be a kind of manufacturing method flow chart of wire-grid polarizer of the utility model, by the way of stacking,
And manufacture is two layers of wire-grid polarizer, comprising steps of
(1) metallic diaphragm is coated on substrate；
(2) coating photoresist on metallic diaphragm；
(3) photoresist mask is made using holographic lithography method on a photoresist；
(4) mask transfer is realized using ion beam etching method, forms groove on metallic diaphragm, and clean remaining light
Photoresist；
(5) substrate one side edge is chosen as reference light grid region, and rest part is filled out in production area's groove as production area
Enter silicon materials；
(6) production area surface is polished using ion beam etching method；
(7) metallic diaphragm is coated on production area surface；
(8) step (2), (3), (4) are repeated, and when repeating step (3), grating pair is carried out using optics Moire fringe technique
Step (3) are carried out after standard；
(9) silicon materials are removed using dry etching.
In conjunction with Fig. 3 as it can be seen that the manufacturing method of above-mentioned wire-grid polarizer passes through holographic lithography and twice ion beam etching twice
The stacking production of two layers of wiregrating is realized, and wiregrating optical alignment has been carried out by optics Moire fringe technique, ensure that complete twice
Cease the consistency in wiregrating period and orientation between photoetching.
As shown in Fig. 2, be a kind of manufacturing method flow chart of wire-grid polarizer of the utility model, by the way of stacking,
And manufacture is three layers and three layers or more of wire-grid polarizer, comprising steps of
(1) metallic diaphragm is coated on substrate；
(2) coating photoresist on metallic diaphragm；
(3) photoresist mask is made using holographic lithography method on a photoresist；
(4) mask transfer is realized using ion beam etching method, forms groove on metallic diaphragm, and clean remaining light
Photoresist；
(5) substrate one side edge is chosen as reference light grid region, and rest part is filled out in production area's groove as production area
Enter silicon materials；
(6) production area surface is polished using ion beam etching method；
(7) metallic diaphragm is coated on production area surface；
(8) step (2), (3), (4), (5), (6), (7) are at least repeated once, and when repeating step (3), using optics
Moire fringe technique carries out step (3) after carrying out grating alignment；
(9) step (2), (3), (4) are repeated, and when repeating step (3), grating pair is carried out using optics Moire fringe technique
Step (3) are carried out after standard；
(10) silicon materials are removed using dry etching.
As it can be seen that three layers and three layers or more of wire-grid polarizer in the fabrication process compared with two layers of wire-grid polarizer, needs
Step (2), (3), (4), (5), (6), (7) are at least repeated once, and when repeating step (3), using optics Moire fringe
Method carries out step (3) after carrying out grating alignment, and every one layer of increase is repeated once.
Specifically, the period (Λ) in step (3) by optical grating construction made by holographic lithography is 180nm~300nm；
It accounts for wide than being 0.25~0.65.Period (Λ) in step (8), (9) by optical grating construction made by holographic lithography is 180nm
~300nm；It accounts for wide than being 0.2~0.65.The technological parameter of ion beam etching in step (4) are as follows: ion energy 200~
600eV, 50~120mA of ion beam current, 200~260V of acceleration voltage, operating pressure 2.1 × 10-2Pa.Ion in step (6)
The technological parameter of beam etching polishing are as follows: 200~400ev of ion energy, 50~100mA of ion beam current, acceleration voltage 200~
260v, operating pressure 1.9 × 10-2Pa, 45~80 degree of etching angle.
As shown in figure 4, the structure for substrate in step (8) in a kind of manufacturing method of wire-grid polarizer of the utility model is shown
It is intended to, 10 one side edge of substrate is reference light grid region 11, and rest part has at the top of the reference light grid region 11 as area 12 is made
There is reference grating 21, there is wiregrating 22 at the top of the production area 12, there is metallic diaphragm 30, the metal at the top of the wiregrating 22
There is photoresist layer 40 at the top of film layer 30.The manufacturing method of above-mentioned wire-grid polarizer, when repeating step (3), comprising steps of
(31) photoresist layer 40 is blocked using blackboard；
(32) Moire fringe is formed using reference grating 21, carries out Moire fringe alignment, so that the photoresist mask of production
The wiregrating period of photoresist mask of manufacture is consistent with first time.
(33) blackboard is removed, interference lithography is carried out to photoresist layer 40.
Specifically, being illustrated so that the period is the manufacturing method of the wire-grid polarizer of 180nm as an example, using trilaminate stack
Mode, comprising steps of
(1) aluminium film with a thickness of 60nm is coated on quartz substrate using thermal evaporation plated film mode；
(2) coating photoresist on aluminium film；
(3) grating mask is made using holographic lithography method on a photoresist, the one-dimensional grating structure of acquisition accounts for wide ratio
About 0.5, groove depth is about 120nm；
(4) mask transfer is realized using ion beam etching, groove is formed on aluminium film, specifically, using argon ion
Beam etching, ion energy 200ev, ion beam current 50mA, acceleration voltage 200v, operating pressure 1.9 × 10-2Pa；
(5) a side edge for choosing substrate is set as reference light grid region, and rest part is as production area, using PECVD
Method (or ECR-CVD) inserts silicon materials in the etched groove in production area；
(6) production area surface being polished using ibl, ion beam polishing uses Ar Ion Beam Etching, from
Sub- energy 200ev, ion beam current 60mA, acceleration voltage 210v, operating pressure 1.9 × 10-2Pa, 60 degree of etching angle；
(7) aluminium film with a thickness of 60nm is coated on production area surface；
(8) step (2), (3), (4), (5), (6), (7) are repeated, and when repeating step (3), using optics Moire fringe
Method carries out step (3) after carrying out grating alignment；
(9) step (2), (3), (4) are repeated, and when repeating step (3), grating pair is carried out using optics Moire fringe technique
Step (3) are carried out after standard；
(10) silicon materials are removed using dry etching, obtains required wire-grid polarizer.
The utility model discloses a kind of manufacture systems of wire-grid polarizer, for implementing the manufacture of above-mentioned wire-grid polarizer
Method, the manufacture system of the wire-grid polarizer include coating machine, photoetching glue spreader, PECVD device, dry etching machine, ion
Beam etching machine, Holographical photoetching system and the optical alignment device being arranged in conjunction with the Holographical photoetching system.Wherein, described
Optical alignment device is as shown in figure 5, include a beam splitter 51, one first reflecting mirror 61, one second reflecting mirror 62, one first lens
611, one second lens 621, a micro-displacement device 70 and a phase control device 80.Incident laser is divided by the beam splitter 51
Two beams are reflected by first reflecting mirror 61 and second reflecting mirror 62 respectively, then respectively through first lens 611 and institute
It states the second lens 621 and forms interference fringe on 10 surface of the substrate being produced, wherein interfering in the reference light grid region 11
Moire fringe is formed under the irradiation of light beam, for realizing the positioning of the substrate 10, the micro-displacement device 70 and described first
Reflecting mirror 61 connects, and the micro-displacement device 70 is electrically connected with institute rheme phase control device 80, the control of institute's rheme phase control device 80
The micro-displacement device 70 drives first reflecting mirror 61 to be displaced, and realizes the adjusting to optical path difference, and then realize the reference
The adjusting of phase difference between grating region 11 and the production area 12.
Specifically, needing for whole substrate to be attached on exposure bracket, the production area 12 being used when repeating step (3)
Blackboard is blocked, and is illuminated using two beam interferometer light of original to the reference light grid region 11, at this time it can be observed that the reference light
The Moire fringe formed between grid region 11 and interference optical field receives the information of Moire fringe with CCD, when being generated according to zero striped
Two kinds of situations, when zero striped is most bright, at this time interference optical field to be with the phase difference of interference optical field when first record be zero (i.e.
Interference optical field striped is overlapped or translates Λ with first time interference fringe at this time)；When zero striped is most dark, at this time interference optical field be with
The phase difference of interference optical field when first record is π.The position phase that Moire fringe is controlled using institute's rheme phase control device 80, makes to join
The Moire fringe information for examining grating reproduction is that zero striped is most bright, and then realizes that light path is adjusted, and reaches the facies-controlled purpose in position.
The foregoing description of the disclosed embodiments can be realized professional and technical personnel in the field or using originally practical new
Type.Various modifications to these embodiments will be readily apparent to those skilled in the art, and determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present utility model.Cause
This, the present invention will not be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The widest scope consistent with features of novelty.
Claims (2)
1. a kind of manufacture system of wire-grid polarizer, which is characterized in that including coating machine, photoetching glue spreader, PECVD device, do
Method etching machine, ion bean etcher, Holographical photoetching system and the optical alignment dress being arranged in conjunction with the Holographical photoetching system
It sets, the coating machine on a substrate for being coated with a metallic diaphragm, and the photoetching glue spreader on metallic diaphragm for being coated with
Photoresist, the Holographical photoetching system realize mask for making photoresist mask on a photoresist, using ion bean etcher
Transfer forms groove on metallic diaphragm, and the PECVD device for inserting silicon materials, the dry etching machine in the trench
For removing silicon materials, the ion bean etcher is also used to polish production area surface, and the optical alignment device is used
In progress grating alignment.
2. the manufacture system of wire-grid polarizer as described in claim 1, which is characterized in that the optical alignment device includes one
Beam splitter, one first reflecting mirror, one second reflecting mirror, one first lens, one second lens, a micro-displacement device and a phase
The laser of controller, the incident optical alignment device is divided into two bundles by the beam splitter, respectively by first reflecting mirror and
The second reflecting mirror reflection, then respectively through first lens and second lens in the substrate surface shape being produced
At interference fringe, the micro-displacement device is connect with first reflecting mirror, and the micro-displacement device and institute's rheme phase control
Device electrical connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721817549.5U CN208399717U (en) | 2017-12-22 | 2017-12-22 | A kind of manufacture system of wire-grid polarizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721817549.5U CN208399717U (en) | 2017-12-22 | 2017-12-22 | A kind of manufacture system of wire-grid polarizer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208399717U true CN208399717U (en) | 2019-01-18 |
Family
ID=65066923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721817549.5U Active CN208399717U (en) | 2017-12-22 | 2017-12-22 | A kind of manufacture system of wire-grid polarizer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208399717U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110013999A (en) * | 2019-05-17 | 2019-07-16 | 电子科技大学 | A kind of tritium pollution lossless minimizing technology of optical film based on inert ion beam etching |
-
2017
- 2017-12-22 CN CN201721817549.5U patent/CN208399717U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110013999A (en) * | 2019-05-17 | 2019-07-16 | 电子科技大学 | A kind of tritium pollution lossless minimizing technology of optical film based on inert ion beam etching |
| CN110013999B (en) * | 2019-05-17 | 2021-06-29 | 电子科技大学 | Tritium-polluted optical film nondestructive removal method based on inert ion beam etching |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109061780B (en) | Dual-wavelength coaxial independent focusing super-surface lens | |
| KR20210106516A (en) | Linear polarization conversion element, manufacturing method and linear polarization conversion system | |
| CN101799569A (en) | Method for producing convex double blazed grating | |
| US6859303B2 (en) | Optical components exhibiting enhanced functionality and method of making same | |
| JP2017072847A (en) | Surface relief microstructure, related device and method of making the same | |
| US9864339B2 (en) | Surface relief volume reflective diffractive structure | |
| CN103969840A (en) | Micro polaroid array on basis of metal nanometer optical gratings and preparation method thereof | |
| CN110568528A (en) | Double-mode super surface based on SOI material and double-mode display application thereof | |
| JP6882316B2 (en) | Wire grid polarizing plate manufacturing method | |
| TWI788276B (en) | Optical body and display device | |
| CN104849791A (en) | Sub-wavelength reflection-type one-dimensional metal wave plate and preparation method thereof | |
| CN102565904A (en) | Method for preparing large-size grating by utilizing grating imaging scan lithography | |
| CN104854487A (en) | Optical grating | |
| CN208399717U (en) | A kind of manufacture system of wire-grid polarizer | |
| CN101315440B (en) | Zero level restraint phase mask in 248 nanometer wave range | |
| CN101295553B (en) | X ray holography diffraction grating beam divider | |
| Wüster et al. | Nano-imprinted subwavelength gratings as polarizing beamsplitters | |
| TWI514097B (en) | A multi-dimensional meta-hologram with polarization-controlled images | |
| CN117518447A (en) | Three-dimensional microscopic imaging method and device based on super-structured lens | |
| CN204758858U (en) | Reflective one -dimensional metal wave plate of inferior wavelength | |
| CN101661126A (en) | Polarization-independent broadband high-efficiency quartz transmission grating | |
| CN107870385A (en) | The manufacture method and manufacture system of a kind of wire-grid polarizer | |
| Xue et al. | Development of dielectric-film-based polarization modulation scheme for patterning highly uniform 2d array structures with periodic tunability | |
| CN210720877U (en) | Multilayer color dynamic display anti-counterfeiting film | |
| CN103197366A (en) | Polarizing filter based on heterojunction grating and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |