CN103901520B - A kind of manufacture method of 90 ° of vee gutter echelons of drift angle - Google Patents
A kind of manufacture method of 90 ° of vee gutter echelons of drift angle Download PDFInfo
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Abstract
The manufacture method of a kind of 90 ° of vee gutter echelons of drift angle, is made up of with metal film (4) silicon grating structure (1), photoresist (3)；Made grating grooved is the triangle that drift angle is equal to 90 °, it is possible to obtain be not the diffraction efficiency that the echelon of 90 ° is higher than drift angle；Optical grating construction produces in the monocrystalline silicon piece cut sth. askew, and blaze of grating angle is determined by cutting drift angle when cutting silicon chip, it is possible to achieve arbitrarily blaze angle preparing grating；90 ° of drift angles by filling photoresist in on-right angle drift angle silicon grating groove, and again carry out photoetching generation, the silicon grating of conventional non-90 degree drift angle can be changed the vee gutter grating of drift angle in 90 °, made optical grating construction, blaze of grating face is smooth monocrystal silicon<111>lattice plane, can effectively reduce scattering, improve diffraction efficiency of grating.It is coated with variety classes reflective coating, it is achieved grating is respectively provided with high-diffraction efficiency in broadband according to using wave band to may select at grating surface.
Description
Technical field
The present invention relates to the dispersion element field used in a kind of spectral instrument, be specifically related to the manufacture method of a kind of echelon for using in visible ray to the echelle spectrograph of infrared band.
Background technology
Echelle spectrograph fast-developing in recent years, utilize echelon for principal dispersion element, it is aided with horizontal dispersion element and carries out level time separation, record the spectral line of wide spectral range (visible ray is to infrared) with area array CCD simultaneously, whole system volume is little, operating wavelength range width, linear dispersion is high, and resolution is high.Echelon, as a kind of specific type of balzed grating, uses " minor face " of groove when differring primarily in that echelle grating operation with common balzed grating, namely blaze angle is typically larger than 45 °.
For the spectral instrument being dispersion element with grating, dispersive power and resolution are to characterize the important parameter of its optical characteristics.Linear dispersion:
Grating resolution:
Wherein, d is grating constant, and m is the order of spectrum, and N is grating lines sums, f represents the focusing length of spectrometer, and it is more big that β represents the angle of diffraction, wavelength X and λ+d λ two spectral line distance dl separately on focal plane, linear dispersion is more big, and resolution is more high, and spectrogrph performance is more good.In order to improve dispersive power and the resolution of spectrogrph, a kind of method is to reduce grating constant, expand area of raster to increase grating number of lines N, make the balzed grating, of large area high linear density, this is echelon early stage of development common method, difficulty is big, and the raising of grid stroke density and area is limited.Other method is to use large period (being typically larger than 10 microns) balzed grating, i.e. echelon.Echelon can glitter at senior time (m) with the bigger angle of diffraction (β) at wide spectral range, and screen periods makes greatly and easily large-area optical grating construction (increasing grating cutting number N), result will obtain higher linear dispersion and resolution.Therefore, echelon is a kind of coarse grating substantially, and incisure density, less than 100 lines per millimeters, has bigger blaze angle, it is possible to for significantly high order of interference, have high resolution.Common grating is by increasing focal distance f raising dispersive power, and echelon is by increasing blaze angle β (50 °～70 °), utilizes EO-1 hyperion level time m (40～120 grades) to improve linear dispersion.Current existing document: document 1:G.R.Harrison, " TheProductionofDiffractionGratings:II.TheDesignofEchelle GratingsandSpectrographs; " J.Opt.Soc.Am.39,522-527 (1949). design and use mechanical scratching to echelon make echelle technique and are described.Document 2: the making of echelette diffraction grating and evaluation (U.U.Graf, D.T.Jaffe, E.J.Kim, J.H.Lacy, H.Ling, J.T.Moore, andG.Rebeiz, " fabricationandevaluationofanetchedinfrareddiffrationgrat ing ", AppliedOptics33,96-102 (1994)) describe use anisotropic wet etch in<100>silicon base, make echelon, grating grooved is isosceles triangle, blaze angle 55 °, drift angle 70.53 °.nullDocument 3: make the infrasil prism (D.J.Mar having micro structure,J.P.Marsh,C.P.Deen,H.Ling,H.Choo,andD.T.Jaffe,"Micromachinedsilicongrismsforinfraredoptics,"AppliedOptics48,1016-1029 (2009) .) propose and silicon is made prism as infrared band dispersion element，One side of silicon prism still use anisotropic wet etch make echelon structure in<100>silicon base，Three kinds of blaze angles are obtained: 6.16 ° by different cutting angles、54.7 ° and 63.4 ° of echelons，Drift angle 70.53 °.Document 4: use echelon that TE and TM polarized light realizes perfection and glitter (KleemannBH.PerfectblazingwithechellegratingsinTEandTMpol arization [J] .Opticsletters, 37 (6): 1002-10042012.), describe for echelon, realize two essential conditions glittering of perfection: the drift angle of triangle grooved is 90 °, and be absent from than auto-collimation incidence time the higher order of diffraction time of the order of diffraction.Echelon is the core parts of echelon spectrometer, and high-diffraction efficiency is the target pursued in echelon evolution.According to document 4, whether the drift angle of the echelon of triangle grooved is 90 ° and will directly affect and whether can obtain perfection and glitter, a such as Fig. 1, b, shown in c, the diffraction efficiency that drift angle is the triangle grooved (as shown in the b of Fig. 1) at right angle is high compared with the triangle grooved (as shown in the c of Fig. 1) of drift angle 70.5 °.The mechanical scratching grating introduced in document 1, grooved drift angle approximate right angle, but the face of glittering that delineation produces is coarse, and fabrication cycle is long.Document 2 and document 3 are introduced on<100>silicon chip, make the echelon being the face of glittering with (111) lattice plane, and surfacing is smooth, reduces the scattering of light, but drift angle is not desirable 90 ° of angles, limit the further raising of diffraction efficiency of grating.
Summary of the invention
The technology of the present invention solves problem: overcome the deficiencies in the prior art, it is provided that the manufacture method of a kind of 90 ° of vee gutter echelons of drift angle, to improve grating at the diffraction efficiency 3%-19% of level time that glitters；Manufacturing process is simple simultaneously.
The technical solution of the present invention；
Propose first to use photoetching technique in silicon echelon structure, produce the triangle echelon of drift angle 90 °, still with silicon (111) lattice plane that naturally occurs for the face of glittering, when blaze angle can pass through to cut silicon chip, namely the angle of new surface original surface is cut drift angle and is controlled.Any blaze angle and the echelon that drift angle is 90 ° can be obtained, will further improve grating in the diffraction efficiency of level time of glittering.
The operating procedure of the present invention is as follows:
The monocrystalline silicon piece that 1st step, preparation are cut sth. askew；The described monocrystalline silicon piece for cutting sth. askew can be common<110>or<100>monocrystalline silicon piece, and its surface is parallel with (110) lattice plane or (100) lattice plane respectively.Described monocrystalline silicon piece of cutting sth. askew refers to and common<110>or<100>type monocrystalline silicon piece is cut, and there is an angle on new surface with original surface (or the lattice plane paralleled with original surface), namely cuts drift angle.Cut drift angle according to monocrystalline silicon piece crystal orientation and made echelon flare angle θbDetermine.
2nd step, monocrystalline silicon piece is coated with 20-100nm silicon nitride (SiN cutting sth. askewx) film；
3rd step, coating photoresist:
Spin coating method is used to be coated with the photoresist layer of 0.1-1 μ m thick on silicon nitride film；
4th step, making photoresist mask graph:
Use has the mask of predetermined period (such as 12.658 microns, corresponding grid stroke rod density 79 lines per millimeter) raster graphic, obtains photoresist grating figure by lithography steps such as exposure, development, drying；
5th step, etch silicon nitride:
With photoresist for mask, use reactive ion etching silicon nitride film layer, photoresist grating Graphic transitions is become silicon nitride grating mask figure.
6th step, wet etching silicon:
With silicon nitride for mask, use the alkaline solutions such as potassium hydroxide solution (KOH) or TMAH, anisotropic etching silicon, form silicon grating structure；
7th step, removal remaining nitride silicon layer:
Use Fluohydric acid. (HF) to soak and remove silicon nitride；
8th step, linear grating groove fill photoresist:
Coating photoresist on silicon echelon, is fill up photoresist in linear grating groove；
9th step, canted exposure:
The optical grating construction that groove fills up photoresist tilts to be placed in ultraviolet light field, makes the internal light splitting photoresist of part of trench be exposed, exposure light and grating normal angle, and namely angle of incidence is equal to blaze of grating angle；
10th step, development:
Develop after exposure, use 0.5% sodium hydroxide solution to dissolve the photoresist being exposed, it is thus achieved that drift angle is the triangle grooved echelon structure of 90 °；
11st step, aluminize at grating surface, gold or other reflecting layer:
Being coated with aluminum, gold or other reflectance coating on echelon, Coating Materials uses wave band to determine according to grating.
Described silicon nitride film can pass through low pressure gas phase deposition; or plasma enhanced chemical vapor deposition (PECVD); can also be made by magnetron sputtering; the mask material of silicon is etched as strong base solution; when thickness is to ensure wet etching silicon, the silicon of energy protective covering cap part is advisable, it is proposed that thickness 20-100nm.
Photoresist described in step 2 can be positive photoresist (being called for short positive glue), it is also possible to be negative photoresist (be called for short negative glue), according to figure on lay photoetching mask plate and making it needs to be determined that.The photoresist filled described in step 7 is positive photoresist.
The condition of described etch silicon nitride: reactive ion beam etching (RIBE), reacting gas carbon tetrafluoride, air pressure 0.5-1.5Pa, automatic bias 100-200V, the time was be more than or equal to 30 seconds.
The condition of described etching silicon: potassium hydroxide solution, concentration 50%, temperature is determined according to etch rate, 20 DEG C to 85 DEG C, at silicon wafer to<110>direction about 1.2 μm/min of etch rate when 80 DEG C, at silicon wafer to<100>direction about 1.4 μm/min of etch rate.Etching depth is determined according to screen periods and blaze angle, and to 79 lines/mm, blaze angle 55 °, the degree of depth should be greater than 5.95 μm, about 5 minutes of etch period.
Described removal silicon nitride condition: 10-39%HF solution, 1-5 minute time, it is also possible to select dry etching, as reactive ion etching (RIE) removes silicon nitride.
Described canted exposure condition: after trench portions is filled photoresist, directly places and in ultraviolet light field, it is not necessary to mask, and between incident ray and grating normal, angle and angle of inclination are equal to blaze of grating angle.Time of exposure determines according to exposure field energy density and photoresist thickness.
Described development conditions: make the special developer solution of manufacturer's offer with photoresist or sodium hydroxide (NaOH) aqueous solution of 0.5% carry out development operation at normal temperatures, developer endpoint selects till part photoresist to be removed (aligning glue, be namely exposed part) is removed completely.
Described plating reflectance coating condition: reflective film material, with aluminum or Jin Weizhu, in the normal aluminium of visible light wave range, often selects gold at infrared band.Plated film mode selects physical coating mode, including evaporation or sputter coating.
Present invention Advantageous Effects compared with prior art is in that: the present invention uses ultraviolet photolithographic and wet etching silicon technology to make echelon, and manufacture method is ripe and simple, and fabrication cycle is short.Made triangle grooved echelon, not only blaze of grating face is smooth silicon crystal lattice face, and is readily available the triangular groove of drift angle 90 °, meets one of condition that echelon perfection glitters.The present invention is different with conventional art, although also utilizing monocrystal silicon to make triangle grooved echelon, but add filling gluing photoetching again, change the present situation in the past using the echelon groove drift angle that wet etching silicon technology makes not to be all 90 °, meet and document 4 obtains one of perfect condition glittered, by acquisition than document 2, the diffraction efficiency that in document 3, the triangle channeled grating of drift angle 70.5 ° is high.Monocrystalline silicon piece for cutting sth. askew used in the present invention can be common<100>or<110>monocrystalline silicon piece, during cutting silicon chip, selects different inclination angle as required, it is possible to achieve arbitrarily the echelon of flare angle makes.
In a word, adopting optical grating construction made by the present invention, blaze of grating face is smooth monocrystal silicon<111>lattice plane, can effectively reduce scattering, and achieves the making of the vee gutter echelon of 90 ° of drift angles, will improve diffraction efficiency of grating.It is coated with variety classes reflective coating, it is achieved grating is respectively provided with high-diffraction efficiency in broadband according to using wave band to may select at grating surface.
Accompanying drawing explanation
Fig. 1 is calculating acquisition drift angle is the triangle grooved of 90 ° and the isosceles triangle grooved ladder of drift angle 70.5 ° and blaze of grating level time diffraction efficiency；Wherein a to be drift angle the be triangle grooved of 90 ° and the isosceles triangle grooved echelon of drift angle 70.5 ° glitter level time diffraction efficiency, and b is the isosceles triangle grooved ladder of drift angle 70.5 °, and c is the triangle grooved of 90 °；
Fig. 2 is echelon making step flow chart of the present invention；
Fig. 3 is<110>silicon chip of cutting sth. askew used in the present invention, designating the relativeness on surface new after silicon chip is cut sth. askew and internal (110) and (111) lattice plane in figure, new surface and (110) lattice plane angle α are numerically equal to 90 ° of-θb, θbFor blaze of grating angle.
Fig. 4 is plating silicon nitride (SiNx) film during the inventive method makes；
Fig. 5 is the coating photoresist during the inventive method makes；
Fig. 6 is that the optical graving during the inventive method makes is for photoresist grating mask graph；
Fig. 7 is the etch silicon nitride during the inventive method makes；
Fig. 8 be the inventive method make in silicon nitride for mask, wet etching silicon, formed parallelogram grooved silicon grating；
Fig. 9 is the removal remaining silicon nitride during the inventive method makes；
Figure 10 again after coating photoresist, has been filled photoresist during the inventive method makes on silicon grating in groove；
The optical grating construction filling up photoresist in groove is carried out during the inventive method makes tilting uv-exposure by Figure 11；
Silicon grating structure after canted exposure is developed during the present invention makes by Figure 12, it is thus achieved that the triangle grooved optical grating construction of 90 ° of drift angles；
Figure 13 is the Scanning Electron microscope photograph that the present invention makes the triangle grooved optical grating construction of 90 ° of drift angles of drift angle of acquisition；
Figure 14 be the inventive method make on 90 ° of drift angle triangle grooved optical grating constructions, be coated with reflecting layer, the kind in reflecting layer according to echelon use wave band determine.
The silicon echelon diffraction efficiency at 90 ° of drift angles with the drift angle 70.53 ° using<100>monocrystal silicon to make in document 2, document 3 that Figure 15 is during the inventive method makes compares, 90 ° of drift angle diffraction efficiency of grating that the present invention makes are 70.53 ° of drift angle grating height 6%-19% relatively, measure wavelength 1.5-1.6 μm.
Figure 16 is that selection is cut sth. askew<100>monocrystalline silicon piece, the schematic diagram cutting drift angle and lattice plane of silicon chip in using the inventive method to make.
Figure 17 is that selection is cut sth. askew<100>monocrystalline silicon piece, the inventive method make in silicon nitride for mask, wet etching silicon, form the triangle grooved silicon grating of drift angle 70.53 °；
Figure 18 is that selection is cut sth. askew<100>monocrystalline silicon piece, and the inventive method removes remaining silicon nitride in making；
Figure 19 is that selection is cut sth. askew<100>monocrystalline silicon piece, and the inventive method again after coating photoresist, has been filled photoresist in making on silicon grating in groove；
Figure 20 is that selection is cut sth. askew<100>monocrystalline silicon piece, and the optical grating construction filling up photoresist in groove is carried out tilting uv-exposure in making by the inventive method；
Figure 21 is that selection is cut sth. askew<100>monocrystalline silicon piece, and silicon grating structure after canted exposure is developed in making by the present invention, it is thus achieved that the triangle grooved optical grating construction of 90 ° of drift angles；
Figure 22 is that selection is cut sth. askew<100>monocrystalline silicon piece, the inventive method make on 90 ° of drift angle triangle grooved optical grating constructions, be coated with reflecting layer, the kind in reflecting layer uses wave band to determine according to echelon.
Figure 23 is during the inventive method makes, use is cut sth. askew<110>monocrystalline silicon piece, the 90 ° of drift angles made, 76 ° of blaze angle echelons and the drift angle 70.53 ° using<100>monocrystal silicon to make, the silicon echelon diffraction efficiency of blaze angle 76 ° compares, 90 ° of drift angle diffraction efficiency of grating that the present invention makes are 70.53 ° of drift angle grating height 6%-14% relatively, measure wavelength 1.5-1.6 μm.
Figure 24 is during the inventive method makes, use is cut sth. askew<100>monocrystalline silicon piece, the 90 ° of drift angles, the 54.47 ° of blaze angle echelons that make compare with the silicon echelon diffraction efficiency of the drift angle 70.53 ° using<100>monocrystal silicon to make, blaze angle 54.47 ° °, 90 ° of drift angle diffraction efficiency of grating that the present invention makes are 70.53 ° of drift angle grating height 3%-11% relatively, measure wavelength 1.5-1.6 μm.
Figure 25 is during the inventive method makes, use is cut sth. askew<100>monocrystalline silicon piece, the 90 ° of drift angles, the 76 ° of blaze angle echelons that make compare with the silicon echelon diffraction efficiency of the drift angle 70.53 ° using<100>monocrystal silicon to make, blaze angle 76 °, 90 ° of drift angle diffraction efficiency of grating that the present invention makes are 70.53 ° of drift angle grating height 5%-17% relatively, measure wavelength 1.5-1.6 μm.
Detailed description of the invention
Before describing the present invention, relational language is illustrated.
<>used in the present invention is used to indicate that the symbol in crystal orientation, () is used for representing lattice plane, the direction (i.e. crystal orientation) of one lattice plane refers to the normal direction of this lattice plane, as<110>refer to the normal direction of (110) lattice plane.
Below in conjunction with accompanying drawing, by embodiment, the invention will be further described.
Embodiment 1 uses<110>monocrystalline silicon piece cut sth. askew, and makes 54.7 ° of echelons of blaze angle:
Echelon preparation method includes following operating procedure, sees Fig. 2；
Selecting<110>monocrystalline silicon piece 1 cut sth. askew, in order to make the echelon of blaze angle 54.7 °, cut the original surface of the silicon chip surface after namely drift angle cuts sth. askew and<110>monocrystalline silicon piece, namely (110) lattice plane angle α is equal to 35.3 °, sees Fig. 3；
Use low-pressure chemical vapor deposition (LPCVD) to be coated with silicon nitride (SiNx) film 2 of thickness 50nm on silicon chip, see Fig. 4；
Using spin coating method to be coated with the positive photoresist 3 of thickness 200nm on silicon nitride film, see Fig. 5, photoresist thickness is determined according to silicon nitride thickness, it is necessary to more than the thickness of silicon nitride film layer 2, selects 100-1000nm；
Mask is used to expose on ultraviolet photolithographic machine, by developing, the steps necessary of a series of photoetching techniques such as drying obtains the photoresist relief pattern consistent with figure on mask, ensure to expose silicon nitride 2 between photoresist grating lines, see Fig. 6, mask has cycle 12.658 μm, line density 79 lines/mm, the grating lines chrome mask figure of spacing 10 μm；
After carrying out photoresist mask graph, react ion etching (RIE) silicon nitride film, reacting gas carbon tetrafluoride (CF4), 2 minutes time (etching condition: air pressure 0.5Pa, radio-frequency power 100W, bias 100V), it is thus achieved that the silicon nitride masking pattern 2 having residue photoresist to cover, see Fig. 7；
Use 50% potassium hydroxide (KOH) solution soaking, etch silicon 1, form parallelogram channeled grating structure, grating lines have remaining silicon nitride 2 cover, see Fig. 8.Soak time and solution concentration and temperature correlation, 80 DEG C of 50%KOH solution, etch period is about 6min.
Use Fluohydric acid. (HF) solution: 39%HF, soak time 10min (silicon nitride thickness 50nm)；Remove remaining silicon nitride 2, it is thus achieved that silicon grating structure, see Fig. 9.
Coating photoresist again on silicon grating, makes to be fully filled with in linear grating groove photoresist, such as Figure 10；
Then, the silicon grating structures slope filling up photoresist in groove being exposed, exposing light beam and grating normal angle are numerically equal to 54.7 ° of blaze of grating angle, see Figure 11,；
After canted exposure, develop, use 0.5% sodium hydrate aqueous solution, the photoresist being exposed part is dissolved, it is thus achieved that blaze angle 54.7 °, drift angle is the vee gutter echelon structure of 90 °, sees Figure 12 and Figure 13；
On silicon grating 1, finally plate the aluminum film 4 of thickness 100nm as reflecting layer, see Figure 14, improve diffraction efficiency of grating.Plated film mode: thermal evaporation is aluminized, thickness 200nm.
Compare with the silicon echelon diffraction efficiency of the drift angle 70.53 ° using<100>monocrystal silicon to make in document 2, document 3 after aluminizing, 90 ° of drift angle diffraction efficiency of grating that the present invention makes are 70.53 ° of drift angle grating height 6%-19% relatively, measure wavelength 1.5-1.6 μm, see Figure 15.
Embodiment 2 uses<110>monocrystalline silicon piece cut sth. askew, and makes 76 ° of echelons of blaze angle:
Selecting<110>monocrystalline silicon piece 1 cut sth. askew, make blaze angle 76 °, cut the silicon chip surface after namely drift angle cuts sth. askew and original surface, namely (110) lattice plane angle α is equal to 14 °, sees Fig. 3；
Use low-pressure chemical vapor deposition (LPCVD) to be coated with silicon nitride (SiNx) film 2 of thickness 50nm on silicon chip, see Fig. 4；
Using spin coating method to be coated with the positive photoresist 3 of thickness 100nm on silicon nitride film, see Fig. 5, photoresist thickness is determined according to silicon nitride thickness, it is necessary to more than the thickness of silicon nitride film layer 2, selects 100-1000nm；
Mask is used to expose on ultraviolet photolithographic machine, by developing, the steps necessary of a series of photoetching techniques such as drying obtains the photoresist relief pattern consistent with figure on mask, ensure to expose silicon nitride 2 between photoresist grating lines, see Fig. 6, mask has cycle 12.658 μm, line density 79 lines/mm, the grating lines chrome mask figure of spacing 10 μm；
After carrying out photoresist mask graph, react ion etching (RIE) silicon nitride film, reacting gas carbon tetrafluoride (CF4), 2 minutes time (etching condition: air pressure 0.5Pa, radio-frequency power 100W, bias 100V), it is thus achieved that the silicon nitride masking pattern 2 having residue photoresist to cover, see Fig. 7；
Use 50% potassium hydroxide (KOH) solution soaking, etch silicon 1, form parallelogram channeled grating structure, grating lines have remaining silicon nitride 2 cover, see Fig. 8.Soak time and solution concentration and temperature correlation, 80 DEG C of 50%KOH solution, etch period is about 6min.
Use Fluohydric acid. (HF) solution: 39%HF, soak time 10min (silicon nitride thickness 50nm)；Remove remaining silicon nitride 2, it is thus achieved that silicon grating structure, see Fig. 9.
Coating photoresist again on silicon grating, makes to be fully filled with in linear grating groove photoresist, such as Figure 10；
Then, the silicon grating structures slope filling up photoresist in groove being exposed, exposing light beam and grating normal angle are numerically equal to 76 ° of blaze of grating angle, see Figure 11,；
After canted exposure, develop, use 0.5% sodium hydrate aqueous solution, the photoresist being exposed part is dissolved, it is thus achieved that blaze angle 76 °, drift angle is the vee gutter echelon structure of 90 °, sees Figure 12；
On silicon grating 1, finally plate the aluminum film 4 of thickness 100nm as reflecting layer, see Figure 14, improve diffraction efficiency of grating.Plated film mode: thermal evaporation is aluminized, thickness 200nm.
Measure the auto-collimation level after aluminizing time diffraction efficiency to compare with the silicon echelon diffraction efficiency of the drift angle 70.53 ° using<100>monocrystal silicon to make, 90 ° of drift angle diffraction efficiency of grating that the present invention makes are 70.53 ° of drift angle grating height 6%-14% relatively, measure wavelength 1.5-1.6 μm, see Figure 23.
Embodiment 3 uses<100>monocrystalline silicon piece, makes 54.7 ° of echelons of blaze angle:
Selecting<100>monocrystalline silicon piece 1, because<100>silicon chip surface and (111) face angle α are equal to 54.7 °, cut new surface and the original surface of silicon chip after namely drift angle cuts sth. askew, namely (100) lattice plane angle α is equal to 0 °, sees Figure 16；
Use low-pressure chemical vapor deposition (LPCVD) to be coated with silicon nitride (SiNx) film 2 of thickness 50nm on silicon chip, see Fig. 4；
Using spin coating method to be coated with the positive photoresist 3 of thickness 100nm on silicon nitride film, see Fig. 5, photoresist thickness is determined according to silicon nitride thickness, it is necessary to more than the thickness of silicon nitride film layer 2, selects 100-1000nm；
Mask is used to expose on ultraviolet photolithographic machine, by developing, the steps necessary of a series of photoetching techniques such as drying obtains the photoresist relief pattern consistent with figure on mask, ensure to expose silicon nitride 2 between photoresist grating lines, see Fig. 6, mask has cycle 12.658 μm, line density 79 lines/mm, the grating lines chrome mask figure of spacing 10 μm；
After carrying out photoresist mask graph, react ion etching (RIE) silicon nitride film, reacting gas carbon tetrafluoride (CF4), 2 minutes time (etching condition: air pressure 0.5Pa, radio-frequency power 100W, bias 100V), it is thus achieved that the silicon nitride masking pattern 2 having residue photoresist to cover, see Fig. 7；
Use 50% potassium hydroxide (KOH) solution soaking, etch silicon 1, form isosceles triangle channeled grating structure, drift angle 70.53 °, grating lines have remaining silicon nitride 2 cover, see Figure 17.Soak time and solution concentration and temperature correlation, 80 DEG C of 50%KOH solution, etch period is about 6min.
Use Fluohydric acid. (HF) solution: 39%HF, soak time 10min (silicon nitride thickness 50nm)；Remove remaining silicon nitride 2, it is thus achieved that silicon grating structure, see Figure 18.
Coating photoresist again on silicon grating, makes to be fully filled with in linear grating groove photoresist, such as Figure 19；
Then, the silicon grating structures slope filling up photoresist in groove being exposed, exposing light beam and grating normal angle are numerically equal to 54.7 ° of blaze of grating angle, see Figure 20；
After canted exposure, develop, use 0.5% sodium hydrate aqueous solution, the photoresist being exposed part is dissolved, it is thus achieved that blaze angle 54.7 °, drift angle is the vee gutter echelon structure of 90 °, sees Figure 21；
On silicon grating 1, finally plate the aluminum film 4 of thickness 100nm as reflecting layer, see Figure 22, improve diffraction efficiency of grating.Plated film mode: thermal evaporation is aluminized, thickness 200nm.
Measuring the auto-collimation level time diffraction efficiency after aluminizing, 90 ° of drift angle diffraction efficiency of grating that the present invention makes are 70.53 ° of drift angles relatively, 54.7 ° of grating height 3%-11% of blaze angle, measure wavelength 1.5-1.6 μm, see Figure 24.
Embodiment 4 uses<100>monocrystalline silicon piece, makes 76 ° of echelons of blaze angle:
Select<100>monocrystalline silicon piece 1, because<100>silicon chip surface and (111) face angle α are equal to 54.7 °, cutting the new surface of silicon chip and original surface after namely drift angle cuts sth. askew is that (100) lattice plane angle α is equal to 21.3 °, sees Figure 16；
Use low-pressure chemical vapor deposition (LPCVD) to be coated with silicon nitride (SiNx) film 2 of thickness 50nm on silicon chip, see Fig. 4；
Using spin coating method to be coated with the positive photoresist 3 of thickness 300nm on silicon nitride film, see Fig. 5, photoresist thickness is determined according to silicon nitride thickness, it is necessary to more than the thickness of silicon nitride film layer 2, selects 100-1000nm；
Mask is used to expose on ultraviolet photolithographic machine, by developing, the steps necessary of a series of photoetching techniques such as drying obtains the photoresist relief pattern consistent with figure on mask, ensure to expose silicon nitride 2 between photoresist grating lines, see Fig. 6, mask has cycle 12.658 μm, line density 79 lines/mm, the grating lines chrome mask figure of spacing 10 μm；
After carrying out photoresist mask graph, react ion etching (RIE) silicon nitride film, reacting gas carbon tetrafluoride (CF4), 2 minutes time (etching condition: air pressure 0.5Pa, radio-frequency power 100W, bias 100V), it is thus achieved that the silicon nitride masking pattern 2 having residue photoresist to cover, see Fig. 7；
Use 50% potassium hydroxide (KOH) solution soaking, etch silicon 1, form triangle grooved optical grating construction, drift angle 70.53 °, grating lines have remaining silicon nitride 2 cover, see Figure 17.Soak time and solution concentration and temperature correlation, 80 DEG C of 50%KOH solution, etch period is about 6min.
Remove remaining silicon nitride 2, it is thus achieved that silicon grating structure, see Figure 18.Use Fluohydric acid. (HF) solution: 39%HF, soak time 10min (silicon nitride thickness 50nm)；
Coating photoresist again on silicon grating, makes to be fully filled with in linear grating groove photoresist, such as Figure 19；
Then, the silicon grating structures slope filling up photoresist in groove being exposed, exposing light beam and grating normal angle are numerically equal to 54.7 ° of blaze of grating angle, see Figure 20；
After canted exposure, develop, use 0.5% sodium hydrate aqueous solution, the photoresist being exposed part is dissolved, it is thus achieved that blaze angle 76 °, drift angle is the vee gutter echelon structure of 90 °, sees Figure 21；
On silicon grating 1, finally plate the aluminum film 4 of thickness 100nm as reflecting layer, see Figure 22, improve diffraction efficiency of grating.Plated film mode: thermal evaporation is aluminized, thickness 200nm.
Measure the auto-collimation level time diffraction efficiency after aluminizing, compare with the silicon echelon diffraction efficiency of the drift angle 70.53 ° using<100>monocrystal silicon to make, 90 ° of drift angle diffraction efficiency of grating that the present invention makes are 70.53 ° of drift angles relatively, 76 ° of grating height 5%-17% of blaze angle, measure wavelength 1.5-1.6 μm, see Figure 25.
In a word, the present invention proposes<110>or<100>monocrystalline silicon piece using inclined cut, by gluing again, canted exposure and development, make the triangle channeled grating that drift angle is right angle, and the face of glittering is silicon (111) lattice plane, surfacing is smooth, the advantage having taken into account two kinds of main Types echelons up to now, therefore the present invention is not increasing on the basis of manufacture difficulty, propose a kind of simple, novel and grating is in the high echelon manufacture method of the diffraction efficiency of level time of glittering, on conventional monocrystalline silicon piece, achieve echelon and obtain the triangle grooved of one of the perfect condition glittered drift angle 90 °.
Non-elaborated part of the present invention belongs to techniques well known.
The above; being only part detailed description of the invention of the present invention, but protection scope of the present invention is not limited thereto, any those skilled in the art are in the technical scope that the invention discloses; the change that can readily occur in or replacement, all should be encompassed within protection scope of the present invention.
Claims (9)
1. the manufacture method of 90 ° of vee gutter echelons of a drift angle, it is characterised in that step is as follows:
The monocrystalline silicon piece that 1st step, preparation are cut sth. askew；
2nd step, on described monocrystalline silicon piece of cutting sth. askew, it is coated with 20-100nm silicon nitride film；
3rd step, on described silicon nitride film be coated with 100-1000nm thickness photoresist layer, the thickness of described photoresist layer is more than the thickness of silicon nitride film layer；
4th step, on the silicon chip of described coating photoresist layer, adopt and have the mask of predetermined period raster graphic, by lithographic process steps such as exposure, developments, in described photoresist layer, obtain photoresist grating figure；
5th step, with described photoresist grating figure for mask, etch nitride silicon film, photoresist grating Graphic transitions is become silicon nitride raster graphic；
6th step, with described silicon nitride raster graphic for mask, use potassium hydroxide solution or TMAH alkaline solution, anisotropic etching silicon, form the silicon grating structure that top has remaining silicon nitride to cover；
7th step, described top has the silicon grating structure that remaining silicon nitride covers put in hydrofluoric acid solution, remove remaining silicon nitride, it is thus achieved that silicon grating structure；
8th step, in described silicon grating structure, resist coating, fill linear grating groove, it is thus achieved that fill up the silicon grating structure of photoresist in groove；
9th step, to the described silicon grating structures slope filling up photoresist exposure, incident ray and grating normal angle are numerically equal to blaze angle, obtain the vee gutter optical grating construction of 90 ° of drift angles after developed；
10th step, on described 90 ° of drift angle vee gutter optical grating constructions plate thickness more than 100nm metal film, it is thus achieved that 90 ° of drift angle vee gutter echelons.
2. the manufacture method of 90 ° of vee gutter echelons of drift angle according to claim 1, it is characterized in that: in described 1st step, the monocrystalline silicon piece for cutting sth. askew is<110>or<100>monocrystalline silicon piece, and its surface is parallel with (110) lattice plane or (100) lattice plane respectively；Described monocrystalline silicon piece of cutting sth. askew refers to and common<110>or<100>type monocrystalline silicon piece is cut, and new surface and original surface or the lattice plane paralleled with original surface have an angle, namely cut drift angle.
3. the manufacture method of 90 ° of vee gutter echelons of drift angle according to claim 1, it is characterised in that: the photoresist in described 3rd step is positive photoresist, or negative photoresist.
4. the manufacture method of 90 ° of vee gutter echelons of drift angle according to claim 1, it is characterized in that: the condition of the etch nitride silicon film in described 5th step: adopt reactive ion etching, reacting gas carbon tetrafluoride, air pressure 0.1-1.5Pa, radio-frequency power 50-300W automatic bias 100-200V, the time was be more than or equal to 30 seconds.
5. the manufacture method of 90 ° of vee gutter echelons of drift angle according to claim 1, it is characterized in that: the condition of the anisotropic etching silicon in described 6th step is: adopt potassium hydroxide solution or TMAH solution, concentration 20%-60%, temperature is determined according to etch rate, 20 DEG C-85 DEG C, when 80 DEG C, silicon is at<110>direction about 1.2 μm/min of etch rate；Etching depth is determined according to screen periods and blaze angle, and to grating groove density 79 lines/mm, blaze angle 55 °, the degree of depth should be greater than 5.95 μm, etch period 5 minutes.
6. the manufacture method of 90 ° of vee gutter echelons of drift angle according to claim 1, it is characterised in that: the described removal silicon nitride condition in described 7th step: 10%-40%HF solution, 2-20 minute time.
7. the manufacture method of 90 ° of vee gutter echelons of drift angle according to claim 1, it is characterised in that: the photoresist in described 8th step is positive photoresist, and the thickness of filled photoresist is equal to the linear grating groove degree of depth.
8. the manufacture method of 90 ° of vee gutter echelons of drift angle according to claim 1, it is characterised in that: to the described silicon grating structures slope exposure filling up photoresist in described 9th step, it is not necessary to mask, directly use the ultraviolet source exposure of uniform intensity.
9. the manufacture method of 90 ° of vee gutter echelons of drift angle according to claim 1, it is characterised in that: the reflectance coating being coated with in described 10th step is determined according to echelle grating operation wave band, uses aluminum film at visible light wave range, uses gold film at infrared band；The method being coated with reflectance coating is thermal evaporation plated film or sputter coating.
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| CN100491971C (en) * | 2006-06-07 | 2009-05-27 | 中国科学院上海微系统与信息技术研究所 | Micro integrated grating spectrograph based on blazed grating and thermopile detector and method for making same |
| CN102236118B (en) * | 2010-05-07 | 2013-10-16 | 同济大学 | Blazed grating with planar structure |
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