CN110632690B - Manufacturing method of staggered inclined-hole-structure grating plate and grating plate - Google Patents
Manufacturing method of staggered inclined-hole-structure grating plate and grating plate Download PDFInfo
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Abstract
The invention is suitable for the technical field of optical holographic imaging, and provides a manufacturing method of a staggered inclined hole structure grating plate and the grating plate, wherein the method comprises the following steps: carrying out right-angle etching on the substrate to form a groove; performing bevel etching on one side of the groove to form a first bevel; arranging a first dielectric film on the substrate on which the first bevel is formed and bonding wafers to form a bevel; performing bevel etching on the substrate with the chamfer angle to form a second bevel angle; combining the photoetching pattern with the substrate forming the second oblique angle for photoetching to form a staggered inclined table grating plate; and arranging a second dielectric film on the staggered inclined platform grating plate, and forming the staggered inclined hole structure grating plate by etching. The invention can enhance the effect of optical holographic imaging, and can accelerate the manufacturing speed and improve the production efficiency by manufacturing the staggered inclined hole structure grating plate in a projection type photoetching mode.
Description
Technical Field
The invention belongs to the technical field of optical holographic imaging, and particularly relates to a manufacturing method of a staggered inclined-hole-structure grating plate and the grating plate.
Background
A grating plate is a precision optical element with a spatially periodic structure. Can be freely colored, odorless, tasteless and nontoxic, and has the advantages of good rigidity, insulation and printability, etc. The conversion of the phase and amplitude of the object to be shot is realized by decomposing the polychromatic light by using the principle of light diffraction, and the human brain processes several pictures at different angles through the visual difference of two eyes to form an image with depth. The product can be widely used in indoor advertising lamp boxes such as hotels, shopping malls, gymnasiums, airport lounges, waiting kiosks and the like, and wedding buildings, figure portraits and decorative paintings.
In the prior art, in the fabrication of an integrated circuit chip, an immersion lithography machine is used for lithography, and after exposure processing is performed on a photoresist, a portion to be removed by etching processing is combined, so that a symmetric tooth-shaped grating plate, such as a right-angle type grating plate, a reverse-oblique-angle type grating plate or an oblique-angle type grating plate, can be fabricated. For asymmetric inclined hole or inclined tooth-shaped grating, the prior art adopts an electron beam direct writing method, and 2-3 hours are generally needed for writing an 8-inch wafer. Therefore, in the prior art, the asymmetric grating plate is slow in manufacturing speed, and the symmetric grating plate has poor imaging effect when optical holographic imaging is performed.
Disclosure of Invention
The embodiment of the invention provides a method for manufacturing a grating plate with a staggered inclined hole structure by using a projection photoetching machine, and aims to solve the problems that an asymmetric grating plate is low in manufacturing speed, and a symmetric grating plate is poor in imaging effect when optical holographic imaging is carried out.
The embodiment of the invention is realized in such a way, and provides a manufacturing method of a staggered inclined hole structure grating plate, which comprises the following steps:
carrying out right-angle etching on the substrate to form a groove;
performing bevel etching on one side of the groove to form a first bevel;
arranging a first dielectric film on the substrate on which the first bevel is formed and bonding wafers to form a bevel;
performing bevel etching on the substrate with the chamfer angle to form a second bevel angle;
combining the photoetching pattern with the substrate forming the second oblique angle for photoetching to form a staggered inclined table grating plate;
and arranging a second dielectric film on the staggered inclined platform grating plate, and forming the staggered inclined hole structure grating plate by etching.
Further, the step of performing bevel etching on one side of the groove to form a first bevel specifically includes:
deviating the position of the photomask plate corresponding to the groove from the first side of the groove;
photoetching the photoresist on the substrate with the groove formed, and etching the middle layer to expose a first side right-angle area of the groove and reserve the coverage of the photoresist in a second side right-angle area;
and etching the right-angle area at the first side of the groove to form the first bevel angle.
Further, the step of forming a bevel angle by providing a first dielectric film on the substrate on which the first bevel angle is formed and performing wafer bonding specifically includes:
arranging a first dielectric film forming dielectric film groove in the groove of the substrate forming the first bevel;
grinding and wafer bonding are carried out on the substrate with the dielectric film groove;
turning over the substrate subjected to wafer bonding, and grinding the substrate on the upper layer of the groove of the dielectric film;
and etching the ground substrate, and removing the first dielectric film in the dielectric film groove to form a chamfer angle.
Further, the step of performing bevel etching on the substrate with the beveled corners to form the second beveled corners specifically includes:
deviating the position of the photomask plate corresponding to the substrate with the chamfer angle towards the first side of the substrate;
photoetching the photoresist on the substrate with the chamfer angle, and etching the intermediate layer to expose a right-angle area at the first side of the groove for forming the chamfer angle and reserve the coverage of the photoresist in a chamfer angle area at the second side;
and etching the right-angle area of the first side of the groove for forming the chamfer angle to form the second chamfer angle.
Further, the step of forming the staggered inclined-stage grating plate by combining the lithography pattern with the substrate forming the second oblique angle for lithography specifically includes:
arranging staggered photoetching patterns right above the substrate with the second bevel angle, enabling the photoetching patterns to be perpendicular to the pattern direction on the substrate, and photoetching the upper layer of photoresist;
developing the graph after photoetching is finished, reserving the photoresist and the middle layer which are formed on the substrate with the second bevel angle and correspond to the position of the photoetching graph, and removing the part which is not covered by the photoresist and the middle layer through etching to form the staggered inclined platform grating plate;
and removing the photoresist and the intermediate layer formed on the staggered inclined platform grating plate.
Further, the step of forming the staggered inclined-hole grating plate by etching, which is to form the second dielectric film on the staggered inclined-table grating plate, includes:
arranging the second dielectric film on the staggered inclined table grating plate for full coverage;
grinding the upper surface of the staggered inclined table grating plate, and removing the second dielectric film arranged on the upper surface of the staggered inclined table;
and etching the ground staggered inclined platform grating plate, removing the staggered inclined platform and forming the staggered inclined hole structure grating plate.
Further, the step of performing right-angle etching on the substrate to form the groove specifically includes:
arranging the photomask plate right above the substrate;
photoetching the photoresist formed on the substrate, and etching the intermediate layer;
and carrying out the right-angle etching on the substrate to form a groove.
Further, before the step of disposing the position of the photomask corresponding to the groove to deviate from the first side of the groove, the method further comprises the steps of:
removing the photoresist and the intermediate layer on the substrate on which the groove is formed;
and spin-coating the photoresist and the intermediate layer on the substrate with the groove to completely cover the substrate.
The invention also provides a grating plate, which comprises a substrate and a second dielectric film arranged on the substrate, wherein a plurality of staggered inclined holes are formed in the second dielectric film.
The invention also provides a grating plate, which comprises the manufacturing method of the staggered inclined hole structure grating plate in any specific embodiment.
The invention achieves the following beneficial effects: the invention carries out right angle etching on the substrate to obtain the substrate with the groove, then carries out bevel angle etching to form the first bevel angle, carries out wafer bonding after the first dielectric film is arranged on the substrate with the first bevel angle, forms the groove with the bevel angle, then carries out bevel angle etching to form the second bevel angle, carries out photoetching by combining the photoetching pattern with the substrate with the second bevel angle to form the staggered sloping platform grating plate, arranges the second dielectric film on the staggered sloping platform grating plate, converts the sloping platform into the inclined hole by etching, so the substrate can be processed by adopting the twice bevel angle etching, the wafer bonding and the photoetching pattern to carry out photoetching, thereby obtaining the grating plate with the staggered inclined hole structure, being beneficial to enhancing the effect of optical holographic imaging, and manufacturing the grating plate with the staggered inclined hole structure by the projection photoetching, the manufacturing speed can be accelerated, and the production efficiency is improved.
Drawings
Fig. 1 is a flowchart of an embodiment of a method for manufacturing a grating plate with an interlaced inclined-hole structure according to an embodiment of the present disclosure;
FIG. 2 is a flow diagram of one embodiment of step 102 of FIG. 1;
FIG. 3 is a flow diagram of one embodiment of step 103 of FIG. 1;
FIG. 4 is a flow diagram of one embodiment of step 104 of FIG. 1;
FIG. 5 is a flow diagram of one embodiment of step 105 of FIG. 1;
FIG. 6 is a flow diagram for one embodiment of step 106 of FIG. 1;
FIG. 7 is a flow diagram of one embodiment of step 101 of FIG. 1;
fig. 8 is a flowchart of another specific embodiment of a method for manufacturing an interlaced inclined-hole grating plate according to an embodiment of the present disclosure;
FIG. 9 is a schematic structural diagram of a first bevel embodiment provided by an embodiment of the present application;
FIG. 10 is a schematic structural view of another first bevel embodiment provided by an embodiment of the present application;
FIG. 11 is a schematic structural diagram of an embodiment of a chamfer provided by an embodiment of the present application;
FIG. 12 is a schematic structural diagram of another embodiment of a chamfer provided by an embodiment of the present application;
FIG. 13 is a schematic structural diagram of another embodiment of a chamfer provided by an embodiment of the present application;
FIG. 14 is a schematic structural diagram of another embodiment of a chamfer provided by an embodiment of the present application;
FIG. 15 is a schematic structural diagram of another embodiment of a chamfer provided by an embodiment of the present application;
FIG. 16 is a schematic structural view of a second bevel embodiment provided by an embodiment of the present application;
FIG. 17 is a schematic structural view of another second bevel embodiment provided in accordance with an embodiment of the present application;
FIG. 18 is a schematic structural diagram of an exemplary embodiment of a staggered ramp provided in accordance with embodiments of the present application;
FIG. 19 is a schematic structural diagram of another exemplary staggered ramp provided in accordance with embodiments of the present application;
FIG. 20 is a schematic structural diagram of another exemplary staggered ramp provided in accordance with embodiments of the present application;
FIG. 21 is a schematic structural diagram of an embodiment of a staggered inclined hole provided in the present application;
FIG. 22 is a schematic structural view of another alternate embodiment of the slanted hole of the present application;
FIG. 23 is a schematic structural view of another alternate embodiment of the slanted hole of the present application;
FIG. 24 is a schematic structural diagram of an embodiment of a groove provided in the present application;
fig. 25 is a schematic structural diagram of another embodiment of a groove provided in the present application.
The structure comprises a substrate 1, a substrate 2, a groove 3, a photomask plate 4, a first bevel angle 5, a first dielectric film 6, a chamfer angle 7, a second bevel angle 8, photoresist 9, a middle layer 10, a protrusion 11, a photoetching pattern 12, a staggered inclined platform 13, a second dielectric film 14 and a staggered inclined hole.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the prior art, in the manufacture of an integrated circuit chip, a symmetric tooth-shaped grid plate, such as a right-angle type, a reverse oblique angle type or an oblique angle type, can be manufactured by photoetching a photoresist through an immersion photoetching machine and then combining with a part needing to be removed through etching treatment; the invention obtains the substrate with the groove by carrying out right angle etching on the substrate, then carries out bevel angle etching to form a first bevel angle, carries out wafer bonding after a first dielectric film is arranged on the substrate with the first bevel angle, forms the groove with the bevel angle, then carries out bevel angle etching to form a second bevel angle, carries out photoetching by combining a photoetching pattern and the substrate with the second bevel angle to form a staggered sloping table grating plate, and sets a second dielectric film on the staggered sloping table grating plate to convert the sloping table into the inclined hole by etching, so that the substrate is processed by adopting twice bevel angle etching, wafer bonding and photoetching combined with the photoetching pattern, thereby obtaining the grating plate with the staggered inclined hole structure and being beneficial to enhancing the effect of optical holographic imaging.
Example one
Fig. 1 is a specific flowchart of a method for manufacturing a grating plate with an interlaced inclined-hole structure according to an embodiment of the present invention. The manufacturing method of the staggered inclined hole structure grating plate comprises the following steps:
Specifically, the photomask blank 3 may be disposed right above the substrate 1 with both sides aligned with the substrate 1. The ultraviolet light can irradiate the photomask plate 3 through the photoetching machine to remove the protective layer on the upper layer of the substrate 1, and the photoetching machine can be an immersion photoetching machine which has high precision. The right-angle etching of the surface of the substrate 1 may be performed by a dry etching machine, and the groove 2 is further formed on the surface of the substrate 1 by performing a physical or chemical reaction between the plasma and the surface of the region without the protection of the protection layer. The material of the substrate 1 may be silicon (Si), silicon dioxide (SiO)2). The shape of the groove 2 may be a right-angle shape. The dry etching is a technology for etching a film by using plasma, when gas exists in a plasma form, the gas can react with a substrate material more quickly by selecting proper gas according to the etched substrate material, and the aim of etching and removing is fulfilled.
Specifically, the photomask plate 3 may be offset to one side relative to the position of the groove 2, and exposes the material in the vertical direction, where one side may be the left side or the right side, and the mask plate is set as required. The immersion lithography machine irradiates ultraviolet rays to the photomask plate 3, removes the offset protective layer in the vertical direction through the groove 2 position of the photomask plate 3, and performs oblique angle etching on the plasma emitted by the dry etching machine and the substrate 1 area on the side without the protective layer according to the offset side of the photomask plate 3 to form a first oblique angle 4. Thus, the grooves 2 with the first bevel angles 4 can be etched on the substrate 1, and the photomask plates 3 are biased instead of being reselected, so that the number of the photomask plates 3 can be saved, and the cost is reduced.
It should be understood that in the embodiment of the present invention, the first side is referred to as the left side, and the direction of the drawing is used as a reference.
The first dielectric film 5 may have a plurality of choices or a plurality of combinations, for example: the substrate material is silicon, the first dielectric film 5 is silicon dioxide, silicon nitride or polysilicon, for example: the substrate material is silicon dioxide, and the dielectric is silicon, silicon nitride or polysilicon. The first dielectric film 5 is deposited on the substrate 1 with the first bevel 4 formed, which can be performed by Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD), and the first dielectric film 5 and the substrate material have different etching resistance to wet etching solution.
Specifically, after the first dielectric film 5 is formed by depositing a dielectric in the groove 2 forming the first bevel 4, the surface of the dielectric film 5 bonded to the substrate 1 may be planarized by chemical mechanical polishing. And then carrying out wafer bonding on the ground substrate 1, adding a layer of substrate 1 (wafer) on the substrate 1, and combining the two layers of wafers together to form a whole, wherein the thickness of the substrate 1 can be the same, and errors in a reasonable range can exist. The chamfering 6 may be performed by turning the substrate 1 after the wafer bonding is completed so that the position of the original first bevel 4 is converted into the chamfering 6.
And 104, performing bevel etching on the substrate 1 with the bevel 6 to form a second bevel 7.
Specifically, the photomask blank 3 may be offset to one side of the groove 2 with respect to the position of the substrate 1 where the chamfer 6 is formed, and the material in the vertical direction is exposed, wherein one side may refer to the right-angled side of the groove 2. The immersion lithography machine can let ultraviolet irradiation photomask plate 3, detach the protective layer of the 2 right angle avris of recess of vertical direction, wherein, the protective layer can be that photoresist 8 and intermediate level 9 send plasma through the dry etching machine and carry out the oblique angle sculpture to removing the substrate 1 region of the lower floor of protective layer, form second oblique angle 7, the second hypotenuse that second oblique angle 7 corresponds can be parallel and isometric two limits with the chamfer that the chamfer 6 that forms after first oblique angle 4 overturns corresponds. Therefore, the substrate 1 with the asymmetric groove 2 carved with the sawtooth pattern is obtained, the protrusions 10 are formed on two sides corresponding to the groove 2, and the process difficulty is reduced through oblique angle etching.
And 105, combining the photoetching pattern 11 with the substrate 1 with the second bevel angle 7 to carry out photoetching to form the staggered inclined platform grating plate.
Specifically, the size of the above-mentioned lithographic pattern 11 may be matched with the size of the substrate 1 forming the second bevel 7, the light-transmitting region on the lithographic pattern 11 may be a rectangular structure, and the long side of the rectangle (the line direction of the lithographic pattern) is perpendicular to the protrusion 10 formed at the bottom, so that after the lithographic process is performed, the lithographic pattern 11 and the protrusion 10 on the substrate 1 may be overlapped. The rectangles can be arranged in a plurality of columns in a staggered manner, the arrangement positions of odd columns are symmetrical, and the arrangement positions of even columns are symmetrical, for example: the number of the first columns is 3, the number of the second columns is 2, the number of the third columns is 3, the number of the fourth columns is 2, namely the first columns are staggered with the second columns. Of course, the number of the light-transmitting areas of the lithographic pattern 11 may be more, and is not limited in the embodiment of the present invention. The staggered inclined-table grating plate can be formed by etching the part of the protrusion 10 which is not overlapped and covered by the protective layer by using plasma in a dry etching mode, so that the covered part is saved, and the staggered inclined table 12 is favorably formed.
And 106, arranging a second dielectric film 13 on the staggered inclined-table grating plate, and forming the staggered inclined-hole structured grating plate by etching.
Specifically, a layer of etching medium layer can be deposited on the staggered sloping-table grating plate through PVD or PVD to fully cover the grating plate, so that a second medium film 13 is formed, all staggered sloping tables 12 are covered by the second medium film 13, and the second medium film 13 and the staggered sloping-table grating plate have different etching resistance to the wet etching solution, so that different materials can be etched by adjusting the wet etching solution. The second dielectric film 13 covering the upper layer of the staggered inclined table 12 can be removed by grinding through chemical machinery, so that the surface is flattened, the upper surface of the staggered inclined table 12 is exposed, wet etching is performed on the staggered inclined table 12 with the exposed upper surface, the staggered inclined table grating plate provided with the second dielectric film 13 can be soaked in corrosive liquid, the corrosive liquid can corrode the staggered inclined table 12, and the second dielectric film 13 cannot be affected due to selective etching of the corrosive liquid. Therefore, the staggered inclined platform 12 can be converted into the staggered inclined hole 14, and the staggered inclined hole structure grating plate can be obtained.
According to the invention, the substrate 1 with the groove 2 is obtained by performing right-angle etching on the substrate 1, then the bevel angle etching is performed to form the first bevel angle 4, the first dielectric film 5 is arranged on the substrate 1 after the first bevel angle 4 is formed, then the wafer bonding is performed to form the groove 2 with the bevel angle 6, then the bevel angle etching is performed to form the second bevel angle 7, the photoetching pattern 11 and the substrate 1 forming the second bevel angle 7 are combined to perform photoetching to form the staggered sloping table grating plate, the second dielectric film 13 is arranged on the staggered sloping table grating plate, and the sloping table is converted into the inclined hole through etching, so that the substrate 1 is processed by adopting the modes of twice bevel angle etching, wafer bonding and photoetching combined with the photoetching pattern 11, the cost is ensured to be controllable, and the process difficulty is reduced; the grating plate with the staggered inclined hole structure is obtained finally, the effect of optical holographic imaging is enhanced, and the grating plate with the staggered inclined hole structure is manufactured in a projection type photoetching mode, so that the manufacturing speed can be increased, and the production efficiency is improved.
Example two
Fig. 2 is a flowchart illustrating a method for manufacturing a grating plate with an interlaced inclined-hole structure according to another embodiment of the present invention. With reference to the schematic structural diagrams of the specific embodiments shown in fig. 9 to 10, on the basis of the first embodiment, the step 102 specifically includes:
Specifically, the photoresist 8 and the intermediate layer 9 are spin-coated on the upper surface of the substrate 1, the intermediate layer disposed on the substrate 1 by a spin-coating process9. And the photoresist 8 arranged on the middle layer 9 form a film layer structure which is arranged from bottom to top in sequence. The photoresist 8 can be a photosensitive material and can be washed away by a developing solution after exposure; the material of the intermediate layer 9 may be an anti-reflection layer, a carbon coating layer, a hard mask layer, or the like, and resin, SiO, or the like may be used2SiN, and the like. By providing different materials, the difference in etching resistance compared with the material of the substrate 1 can be obtained, and the other materials can not be affected while the pattern is etched on the place to be etched. The intermediate layer 9 can thus transfer the pattern formed by the upper layer of photoresist 8 to the substrate 1. The addition of the intermediate layer 9 can reduce the reflection of exposure to the bottom for small-sized patterns, and ensure the resolution of the photoetching process.
More specifically, the offset towards the first side may be provided by a distance of half the width of the groove 2, although tolerance ranges may be provided, such as: the deviation is not more than 10% of the width of the groove 2, and the width of the groove 2 is 10mm, the offset distance is 5mm +/-0.1 mm. The pattern on the photomask plate 3 is transferred to the photoresist 8 during photoetching, when an immersion photoetching machine irradiates ultraviolet rays on the photomask plate 3, the photoresist 8 on the uppermost layer is exposed in the vertical direction, the photoresist 8 in an exposure area can be washed away by subsequent developing solution, then the intermediate layer 9 is dry-etched in the vertical direction, the pattern on the photoresist 8 is transferred to the intermediate layer 9, after the intermediate layer 9 is opened, the right-angle area on the first side of the groove 2 is exposed, the plasma further performs oblique angle etching on the exposed right-angle area, and finally the substrate 1 with the first bevel angle 4 is formed, namely the substrate 1 is reserved in the vertical-direction area protected by the photoresist 8, the area without the protection of the photoresist 8 is etched to form an oblique angle grating pattern, and in the part which the right-angle etching is finished, not affected by bevel etching.
Therefore, by offsetting the position of the photomask plate 3 relative to the groove 2 to the first side, the use number of the photomask plate 3 can be reduced, and the cost is saved; after photoetching is carried out on the photoresist 8 and the middle layer 9 in the vertical direction, the right-angle area on the first side of the groove 2 is exposed, and oblique angle etching is carried out on the right-angle area on the first side, so that the groove 2 with a first oblique angle 4 graph can be obtained on the substrate 1.
EXAMPLE III
As shown in fig. 3, in combination with the schematic structural diagrams of the specific embodiments shown in fig. 11 to 15, the step 103 specifically includes:
and 304, etching the ground substrate 1, and removing the first dielectric film 5 in the dielectric film groove to form a chamfer angle 6.
Specifically, a layer of etching dielectric film 5 can be deposited on the substrate 1 by PVD or CVD in a thin film process, and the etching resistance of the dielectric film 5 is different from that of the substrate 1. The dielectric film 5 is arranged in the groove 2 formed with the first oblique angle 4, a dielectric film groove deposited by the dielectric film 5 is formed, the structure of the groove 2 is protected, wherein the surface of the substrate 1 deposited with the dielectric film 5 can be ground through chemical mechanical grinding, the surface becomes flatter, the suede surface is etched by a wet method, and the grinding thickness can be accurately controlled through the chemical mechanical grinding, so that the upper surface is kept flat.
More specifically, the wafer bonding of the substrate 1 may be performed by cleaning and activating two silicon wafers (substrate materials, also referred to as wafers), and then directly bonding the two silicon wafers together under a certain condition, and then combining the two silicon wafers into a single substrate 1 under one or more acting forces. The substrate 1 formed with the dielectric film groove and integrated is turned over by 180 degrees, the dielectric film groove is positioned between two silicon wafers, the silicon wafers added after bonding are arranged on the lower layer, and the substrate 1 before bonding, namely the dielectric film groove, is arranged on the upper layer. The silicon wafer bonded on the upper layer of the dielectric film groove can be removed again by chemical mechanical polishing, so that the top edge of the dielectric film groove and the top edge of the substrate 1 are arranged on the same plane, and the plane becomes flat. The etching of the ground substrate 1 can be wet etching, the substrate 1 is placed in a corrosive liquid capable of interacting with the dielectric film 5 material, but does not interact with the substrate 1 material, the corrosive liquid is used for removing the dielectric film 5 in the dielectric film groove, so that the first bevel angle 4 is converted into the bevel angle 6, but the etching is not performed through the bevel angle 6. The photoresist 8 and the intermediate layer 9 on the groove 2 for forming the chamfer angle 6 can be spin-coated on the surface of the substrate 1 again through a spin-coating process, and the photoresist covers the whole surface of the substrate 1 and the groove 2 to form a new matching, which is beneficial to forming a grating pattern with smaller size and better effect.
Like this, protect recess 2 that forms first oblique angle 4 earlier through increasing first dielectric film 5, then adopt to carry out wafer bonding to substrate 1 and form an organic whole and upset, grind again and wet etching gets rid of first dielectric film 5, lets recess 2 remain to under the prerequisite that does not use the chamfer sculpture, still convert first oblique angle 4 into chamfer 6, be favorable to reducing the technology degree of difficulty.
Example four
As shown in fig. 4, in combination with the schematic structural diagrams of the specific embodiments shown in fig. 16 to 17, the step 104 specifically includes:
and 403, etching the first side right-angle area of the groove 2 for forming the chamfer angle 6 to form a second chamfer angle 7.
Specifically, the position of the photomask plate 3 corresponding to the substrate 1 on which the bevel 6 is formed may be offset to the first side of the substrate 1, and if the bevel 6 is located on the right side (left side) of the groove 2 on the substrate 1, the offset to the first side of the substrate 1 may be to the left side (right side) of the groove 2, and the offset direction may be the same direction as the direction of offsetting the position of the photomask plate 3 corresponding to the groove 2 to the first side of the groove 2. The offset distance may be half the width of the groove 2, preferably equal at each offset. Of course, tolerance ranges may be provided, for example: the deviation is not more than 10% of the width of the groove 2, and the width of the groove 2 is 10mm, the offset distance is 5mm +/-0.1 mm.
More specifically, after the groove 2 is subjected to bevel etching to form the first bevel 4, the immersion lithography machine irradiates ultraviolet light onto the photomask plate 3 again, the photoresist 8 arranged on the uppermost layer is exposed in the vertical direction, the photoresist 8 in the exposed area can be washed away by subsequent developing solution, then the intermediate layer 9 is subjected to dry etching in the vertical direction, the pattern on the photoresist 8 is transferred to the intermediate layer 9, after the intermediate layer 9 is opened, the first side right-angle area of the groove 2 with the formed bevel 6 is exposed, the plasma performs bevel etching on the part of the first side right-angle area, the substrate 1 with the second bevel 7 is finally formed, the pattern on the intermediate layer 9 is transferred to the groove 2 with the second bevel 7, namely the part of the substrate 1 in the vertical direction protected by the photoresist 8 is reserved, and the protected part of the groove 2 can be provided, it is also possible to include a portion of the upper surface of the substrate 1 where the recess 2 is not formed, and a region not protected by the photoresist 8 is etched out of the grating pattern. After the etching of the second bevel 7 is completed, the photoresist 8 and the intermediate layer 9 formed on the substrate 1 etched with the second bevel 7 can be removed by the photoresist stripping liquid, and the photoresist 8 and the intermediate layer 9 are re-spin-coated on the substrate 1 formed with the second bevel 7 by the spin-coating process to form a new match, which is beneficial to forming a grating pattern with smaller size and better effect.
Thus, by offsetting the photomask plate 3 to the position of the groove 2 on which the chamfer angle 6 is formed to the first side without reusing the photomask plate 3, the use number of the photomask plate 3 can be saved, and the cost can be saved; let the first side right angle region of recess 2 that forms chamfer 6 expose and be favorable to through the bevel etching second bevel 7 to on transferring the substrate 1 that forms second bevel 7 department with the figure, finally obtain the asymmetric substrate 1 that has the skewed tooth figure, can reduce the technology degree of difficulty, still be favorable to improving holographic imaging's effect, and make crisscross formula inclined hole structure grating plate through projection photoetching mode, can accelerate the preparation speed, improve production efficiency.
EXAMPLE five
As shown in fig. 5, an embodiment flowchart of another method for manufacturing a grating plate with an interlaced inclined-hole structure according to an embodiment of the present invention is combined with the structure schematic diagrams of the specific embodiments shown in fig. 18 to 20, and on the basis of the first embodiment, the step 105 specifically includes:
Specifically, the photoresist pattern 11 is arranged above the substrate 1 forming the second bevel 7, the light-transmitting area on the photoresist pattern may be a rectangular area, the long side of the rectangle is perpendicular to the direction of the protrusion 10 on the substrate 1, and each column (row) of the photoresist 8 and the middle layer 9 which are remained after the photoresist pattern is etched can be covered on the protrusion 10 at equal intervals. In a preferable mode, the long side of the region transmitting ultraviolet rays may be made larger than the width of the projection 10.
More specifically, the photoresist pattern 11 is etched on the upper layer of the photoresist 8 during the photolithography, the configuration of the developing solution is adjusted by developing the photoresist 8 etched with the pattern, so that the photoresist 8 without the pattern is quickly dissolved by the developing solution, and the photoresist 8 etched with the pattern is partially retained on the substrate 1 and covered on the staggered ramp 12. The staggered ramp 12 grating plate can be formed by selecting gases with different activities by a dry etching machine and carrying out dry etching on the developed staggered ramp 12 by using plasma, so that the pattern on the photoresist 8 is transferred to the staggered ramp 12, and the photoresist 8 and the intermediate layer 9 formed on the staggered ramp grating plate can be removed by using a developing solution.
Thus, the staggered photoetching patterns 11 are photoetched on the photoresist 8 of the substrate 1 with the second bevel 7, the photoresist 8 without patterns etched is removed through the developing solution, and the photoresist 8 with patterns etched is partially reserved and then is subjected to dry etching, so that the photoetching patterns 11 can be transferred to the staggered sloping platforms 12 to form the staggered sloping platform grating plate.
EXAMPLE six
As shown in fig. 6, in combination with the schematic structural diagrams of the specific embodiments shown in fig. 21 to 23, the step 106 specifically includes:
601, arranging a second dielectric film 13 on the staggered inclined table grating plate for full coverage;
The material of the second dielectric film 13 may be the same as the material of the first dielectric film 5, the second dielectric film 13 may be completely covered on the staggered sloped table grating plate, the staggered sloped table 12 is covered in the second dielectric film 13, and the staggered sloped table grating plate may be ground by chemical mechanical grinding to expose the upper surface of the staggered sloped table 12, so as to remove the redundant part of the second dielectric film 13, and meanwhile, the ground thickness may be controlled and the upper surface may be kept flat. The etching of the ground staggered inclined-table grating plate can be wet etching, the etching can be selective etching of the staggered inclined table 12, chemical substances can perform chemical reaction with materials of the inclined table to corrode the inclined table, the second dielectric film 13 cannot be affected, and finally the staggered inclined table 12 is converted into inclined holes to obtain the staggered inclined-hole-structure grating plate.
Therefore, by adding the second dielectric film 13, grinding and wet etching, the staggered inclined table 12 is converted into the staggered inclined hole 14, and finally the staggered inclined hole structure grating plate is obtained, which is beneficial to improving the holographic imaging effect.
EXAMPLE seven
As shown in fig. 7, in combination with the schematic structural diagrams of the specific embodiments shown in fig. 24 to 25, the step 101 specifically includes:
The photoresist 8, the intermediate layer 9 and the substrate 1 are formed by different etching processes, so that different effects are achieved, different etching gases can be selected to enable the etching process to have a strong etching force selectively on a certain material, and other materials are not affected, for example: the photoresist 8 and the intermediate layer 9 are etched, but the etching of the substrate 1 is not affected.
Specifically, the photoresist 8 is photoetched by the photomask plate 3, the polarity of the material is changed in the vertical exposure area irradiated by the light beam, the material can be subsequently washed away by the developing solution, the unexposed area can be reserved, the intermediate layer 9 is further subjected to dry etching by a dry etching machine, the area needing etching is reserved, and the pattern is etched. After the pattern etching of the intermediate layer 9 is completed, the substrate 1 is further subjected to right-angle etching to form the groove 2, so that the etched pattern of the intermediate layer 9 will be transferred to the groove 2. After the groove 2 is formed, the photoresist 8 and the middle layer 9 above the groove can be removed through photoresist stripping liquid, and the photoresist 8 and the middle layer 9 are coated on the groove 2 again in a spinning mode to form a new match, so that a grating pattern with smaller size and better effect can be formed.
Like this, through earlier carrying out the photoetching to photoetching glue 8 with the figure on the photomask board 3, further carry out the sculpture to intermediate level 9, carry out the right angle sculpture to substrate 1 at last, be favorable to transferring the figure on the photomask board 3 on photoetching glue 8, then photoetching glue 8 transfers the figure to intermediate level 9 again, intermediate level 9 transfers the figure to recess 2 again, carry out preparation staggered form inclined hole structure grating board through projection photoetching mode, can accelerate the preparation speed, improve production efficiency.
Example eight
As shown in fig. 8, an embodiment flowchart of another method for manufacturing a grating plate with an interlaced inclined-hole structure according to an embodiment of the present invention specifically includes, on the basis of the first embodiment, before step 201:
Specifically, before bevel etching is performed on the first side right-angle region of the groove 2 of the substrate 1, the photoresist 8 and the intermediate layer 9 on the substrate 1 may be spin-coated on the surface of the groove 2 of the substrate 1 again by a spin-coating process. The photoresist 8 and the intermediate layer 9 remaining after the right-angle etching of the substrate 1 may be removed using a photoresist stripper, which may be an acidic or alkaline solution, prior to the spin coating. That is, the right-angle area on the first side of the groove 2 is etched in an oblique angle, and the photoresist 8 and the middle layer 9 on the upper layer are etched in a right angle on the substrate 1.
Therefore, the photoresist 8 and the middle layer 9 are coated in a spinning mode before the first side right-angle area of the groove 2 is subjected to bevel etching, a new matching is formed, and the formation of a grating pattern with smaller size and better effect is facilitated.
Example nine
The embodiment of the invention also provides a grating plate, which comprises a substrate 1 and a second dielectric film 13 arranged on the substrate 1, wherein the second dielectric film 13 is provided with staggered inclined holes 14.
Specifically, the staggered inclined holes 14 may be arranged between the second dielectric films 13 in multiple rows, two inclined holes may be arranged in odd rows, three inclined holes may be arranged in even rows, the even rows and the odd rows are staggered, the size of each inclined hole may be the same, and the distance between the inclined holes in each row may be the same, although a tolerance range may exist. The inclined hole may be a rectangular parallelepiped structure inclined to the left. Wherein the boundary of the second dielectric film 13 may be a boundary not exceeding the bottom substrate. The grating plate with the staggered inclined hole structure is beneficial to improving the imaging effect of holographic imaging.
Example ten
The embodiment of the invention also provides a grating plate, which comprises the manufacturing method of any one of the first to eighth staggered inclined-hole grating plates.
The specific implementation manner of the manufacturing method of any staggered inclined-hole grating plate of the first to eighth embodiments can be implemented on the grating plate, and the same beneficial effects can be achieved.
According to the invention, ultraviolet light beams are irradiated on the optical mask plate 3 through the immersion type photoetching machine to carry out photoetching on the photoresist 8, the middle layer 9 is etched through dry etching, the pattern on the optical mask plate 3 is etched to the middle layer 9, the substrate 1 is subjected to right-angle etching through the dry etching to obtain the groove 2, the pattern transferred by the middle layer 9 is etched on the groove 2, the position of the optical mask plate 3 corresponding to the groove 2 is biased to the first side of the groove 2, and oblique angle etching is carried out after the bias to form the first oblique angle 4, so that the number of the optical mask plates 3 is saved, and the cost is reduced; depositing a first dielectric film 5 on a substrate 1 with a first bevel 4, then bonding the substrate through a wafer, turning the substrate, carrying out chemical mechanical grinding, carrying out selective wet etching to form a groove 2 with a chamfer 6, then biasing a photomask plate 3 to the first side of the groove 2, carrying out bevel etching to form a second bevel 7, wherein the process difficulty can be reduced by adopting bevel etching in both etching; and finally, after an asymmetric grating plate with a sawtooth pattern is obtained, photoetching, developing, depositing a second dielectric film 13 and etching are combined with the photoetching pattern 11 to form the grating plate with the staggered inclined-hole structure, so that the optical holographic imaging effect can be enhanced, and the staggered inclined-hole structure grating plate is manufactured in a projection type photoetching mode, so that the manufacturing speed can be increased, and the production efficiency can be improved.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a" does not exclude the presence of other like elements in a process or apparatus that comprises the element.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (6)
1. A manufacturing method of a staggered inclined hole structure grating plate is characterized by comprising the following steps:
carrying out right-angle etching on the substrate to form a groove;
performing bevel etching on one side of the groove to form a first bevel;
arranging a first dielectric film forming dielectric film groove in the groove of the substrate forming the first bevel; grinding and wafer bonding are carried out on the substrate with the dielectric film groove; turning over the substrate subjected to wafer bonding, and grinding the substrate on the upper layer of the groove of the dielectric film; etching the ground substrate, and removing the first dielectric film in the dielectric film groove to form a chamfer angle;
performing bevel etching on the substrate with the bevel angles formed to form a second bevel angle, wherein a second bevel edge corresponding to the second bevel angle is parallel to and equal to a bevel edge corresponding to the bevel angle formed after the first bevel angle is turned over;
arranging the staggered photoetching patterns right above the substrate with the second oblique angle, enabling the photoetching patterns to be perpendicular to the pattern direction on the substrate, and photoetching the photoresist on the substrate;
developing the graph after photoetching is finished, reserving the photoresist and the middle layer which are formed on the substrate with the second bevel angle and correspond to the position of the photoetching graph, and removing the part which is not covered by the photoresist and the middle layer through etching to form the staggered inclined table grating plate;
removing the photoresist and the intermediate layer formed on the staggered inclined platform grating plate;
arranging a second dielectric film on the staggered inclined table grating plate for full coverage;
grinding the upper surface of the staggered inclined table grating plate, and removing the second dielectric film arranged on the upper surface of the staggered inclined table;
and etching the ground staggered inclined platform grating plate, removing the staggered inclined platform and forming the staggered inclined hole structure grating plate.
2. The method for manufacturing a grating plate with an interlaced inclined-hole structure according to claim 1, wherein the step of performing bevel etching on one side of the groove to form a first bevel specifically comprises:
deviating the position of the photomask plate corresponding to the groove from the first side of the groove;
photoetching the photoresist on the substrate with the groove formed, and etching the middle layer to expose a first side right-angle area of the groove and reserve the coverage of the photoresist in a second side right-angle area;
and etching the right-angle area at the first side of the groove to form the first bevel angle.
3. The method for manufacturing an interleaved inclined-hole grating plate according to claim 2, wherein the step of performing bevel etching on the substrate on which the bevel angle is formed to form the second bevel angle specifically comprises:
deviating the position of the photomask plate corresponding to the substrate with the chamfer angle towards the first side of the substrate;
photoetching the photoresist on the substrate with the chamfer angle, and etching the intermediate layer to expose a right-angle area at the first side of the groove for forming the chamfer angle and reserve the coverage of the photoresist in a chamfer angle area at the second side;
and etching the right-angle area of the first side of the groove for forming the chamfer angle to form the second chamfer angle.
4. The method for manufacturing a grating plate with an interlaced inclined-hole structure according to claim 2, wherein the step of performing right-angle etching on the substrate to form the groove specifically comprises:
arranging the photomask plate right above the substrate;
photoetching the photoresist formed on the substrate, and etching the intermediate layer;
and carrying out the right-angle etching on the substrate to form a groove.
5. The method for manufacturing an interlaced inclined-hole grating plate according to claim 2, wherein before the step of disposing the photomask plate corresponding to the grooves to deviate from the first side of the grooves, the method further comprises the steps of:
removing the photoresist and the intermediate layer on the substrate on which the groove is formed;
and spin-coating the photoresist and the intermediate layer on the substrate with the groove to completely cover the substrate.
6. A grating plate, comprising the grating plate manufactured by the method for manufacturing a grating plate with an interlaced inclined hole structure according to any one of claims 1 to 5.
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| US20160035539A1 (en) * | 2014-07-30 | 2016-02-04 | Lauri SAINIEMI | Microfabrication |
| US10845596B2 (en) * | 2018-01-23 | 2020-11-24 | Facebook Technologies, Llc | Slanted surface relief grating for rainbow reduction in waveguide display |
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| JP2002189112A (en) * | 2000-12-22 | 2002-07-05 | Canon Inc | Method for manufacturing diffraction optical element, and die for manufacture of diffraction optical element and diffraction optical element manufactured by the method for manufacturing diffraction optical element, and optical system, optical appliance and aligner having the diffraction optical element, method for manufacturing device, and device |
| CN101313234A (en) * | 2005-11-18 | 2008-11-26 | 纳诺科普有限公司 | Method for manufacturing diffraction grid |
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