CN109119885A - A kind of laser chip encapsulating structure and its packaging method - Google Patents
A kind of laser chip encapsulating structure and its packaging method Download PDFInfo
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- CN109119885A CN109119885A CN201810972535.3A CN201810972535A CN109119885A CN 109119885 A CN109119885 A CN 109119885A CN 201810972535 A CN201810972535 A CN 201810972535A CN 109119885 A CN109119885 A CN 109119885A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/085—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by electromagnetic means
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/105—Scanning systems with one or more pivoting mirrors or galvano-mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
Abstract
The application discloses a kind of laser chip encapsulating structure and its packaging method, the encapsulating structure includes: that organic substrate, upside-down mounting are bundled in the MEMS chip on the organic substrate surface, and it is fixed on the VCSEL chip on organic substrate, connecting pin, the first interconnection circuit and the second interconnection circuit are provided on organic substrate, first interconnection circuit is electrically connected MEMS chip, second interconnection circuit is electrically connected VCSEL chip, and first interconnection circuit and the second interconnection circuit be all connected with the connecting pin, the connecting pin is used for and external circuit is electrically connected.MEMS chip is inverted on organic substrate in the present invention, and the encapsulation of VCSEL chip and MEMS chip is realized using Fanout structure, due to being not necessarily to other supplementary structures, the biggish frame structure of such as volume and the thicker ceramic substrate of thickness, it can be realized integrated, the overall volume of reduction laser chip encapsulating structure of VCSEL chip and MEMS chip.
Description
Technical field
The present invention relates to chip encapsulation technology field more particularly to a kind of laser chip encapsulating structure and its packaging methods.
Background technique
Laser has unique optical characteristics, such as the features such as monochromaticjty is high, high directivity, so that the development of laser device
Speed is getting faster, and will be used wider and wider.Especially because the extremely strong directionality of laser, so that it is not required to by lens
The quality that luminous point can be kept in certain distance, becomes the preferred light source of bar code scan.
During bar code scan, other than laser light source, it is also necessary to laser be realized to the scanning device of scanning, usually
It is realized using MEMS (MEMS, Micro-Electro-MechanicalSystems) galvanometer system.
But the volume for the encapsulating structure that laser light source and galvanometer system combine in the prior art is larger.
Summary of the invention
To solve the above-mentioned problems, the present invention provides a kind of laser chip encapsulating structure and its packaging method, uses
Fanout (is fanned out to) encapsulation that packaged type realizes MEMS chip and laser chip (VCSEL chip), to reduce laser chip
The volume of encapsulating structure.
To achieve the above object, the invention provides the following technical scheme:
A kind of laser chip encapsulating structure, comprising:
Organic substrate, the organic substrate include the first surface and second surface being oppositely arranged, and through described the
The through-hole on one surface and the second surface, the first surface of the organic substrate are additionally provided with connecting pin, and the connecting pin is used
It is electrically connected in external circuit；
Upside-down mounting is bundled in the first surface of the organic substrate, and covers the MEMS chip of the through-hole, the MEMS core
The surface of piece towards the organic substrate is provided with galvanometer；
The fixed VCSEL chip with the through-hole relative position, for emitting laser to the galvanometer surface；
Transparent substrate, the transparent substrate is located at the second surface of the organic substrate, and covers the through-hole；
It include the first interconnection circuit and the second interconnection circuit in the organic substrate, first interconnection circuit electrically connects
Connect the MEMS chip, second interconnection circuit is electrically connected the VCSEL chip, first interconnection circuit and described
Second interconnection circuit is used to connect the connecting pin.
It preferably, further include metallic circuit on the transparent substrate, the metallic circuit and second interconnection circuit electricity
Property connection.
Preferably, the VCSEL chip is arranged on the transparent substrate, and is electrically connected with the metallic circuit.
Preferably, the transparent substrate is arranged in towards the surface of the organic substrate in the VCSEL chip.
It preferably, further include the first conductive structure, the VCSEL chip passes through first conductive structure and the gold
Belong to circuit to be electrically connected.
Preferably, first conductive structure is conducting wire, conductive paste or pedestal.
Preferably, the surface that the transparent substrate deviates from the organic substrate is arranged in the VCSEL chip.
Preferably, the center of projection of the VCSEL chip on the transparent substrate surface and the MEMS chip exist
The center of projection on the transparent substrate is overlapped.
Preferably, the second surface of the organic substrate is arranged in the VCSEL chip, and shoot laser direction deviates from institute
State organic substrate.
Preferably, the VCSEL chip is electrically connected by the second conductive structure and second interconnection circuit.
Preferably, second conductive structure is conducting wire, conductive paste or pedestal.
Preferably, further include optical system, the optical system by the VCSEL chip be emitted away from described organic
The laser reflection of substrate is to the galvanometer surface for being located at first surface on the organic substrate.
Preferably, the transparent substrate is glass substrate.
Preferably, the connecting pin is solder-bump or conductive welding disk.
Preferably, the organic substrate is pcb board or FPC plate.
The present invention also provides a kind of laser chip packaging method, be used to form any of the above one described in laser chip
Encapsulating structure, the laser chip packaging method include:
Organic substrate is provided, the organic substrate includes the first surface and second surface being oppositely arranged, and runs through institute
The through-hole of first surface and the second surface is stated, the first surface of the organic substrate is additionally provided with connecting pin, the connection
End with external circuit for being electrically connected；And the first interconnection circuit and the second interconnection circuit in the organic substrate,
First interconnection circuit and second interconnection circuit are used to connect the connecting pin；
MEMS chip, VCSEL chip and transparent substrate are provided；
The MEMS chip upside-down mounting is bundled in the first surface of the organic substrate, and covers the through-hole, it is described
MEMS chip and first interconnection circuit are electrically connected；
The VCSEL chip and second interconnection circuit are electrically connected；
The transparent substrate is mounted on to the second surface of the organic substrate, and covers the through-hole.
Preferably, further includes: metallic circuit is set on the transparent substrate.
Preferably, described to be electrically connected the VCSEL chip and second interconnection circuit, it specifically includes:
By the VCSEL chip bonding on the transparent substrate, by described in the electric connection of the first conductive structure
VCSEL chip and the metallic circuit；
Metallic circuit on the transparent substrate is passed through into the second interconnection circuit electricity on conductive paste and the organic substrate
Property connection.
Preferably, described to be electrically connected the VCSEL chip and second interconnection circuit, it specifically includes:
The VCSEL chip is tied on the second surface of the organic substrate by the second conductive structure, described
Two conductive structures and second interconnection circuit are electrically connected.
It can be seen via above technical scheme that laser chip encapsulating structure provided by the invention, including organic substrate, fall
Dress is bundled in the MEMS chip on the organic substrate surface, and the VCSEL chip being fixed on organic substrate, organic substrate
On be provided with connecting pin, the first interconnection circuit and the second interconnection circuit, the first interconnection circuit is electrically connected MEMS chip, second
Interconnection circuit is electrically connected VCSEL chip, and the first interconnection circuit and the second interconnection circuit are all connected with the connecting pin, described
Connecting pin is used to be electrically connected with external circuit.Namely laser chip encapsulating structure provided by the invention, by MEMS chip upside-down mounting
On organic substrate, and using the encapsulation of Fanout structure realization VCSEL chip and MEMS chip, due to being tied using Fanout
Structure realizes that encapsulation can realize the electrical property of VCSEL chip and MEMS chip and external circuit by the circuit inside organic substrate
Connection, without other supplementary structures, such as the biggish frame structure of volume and the thicker ceramic substrate structure of thickness, thus
It can be realized integrated, the overall volume of reduction laser chip encapsulating structure of VCSEL chip and MEMS chip.
The present invention also provides a kind of laser chip packaging methods, can be obtained by the laser chip packaging method
Laser chip encapsulating structure described in face, so that the integrated level of the encapsulation of laser chip and MEMS chip is higher, volume subtracts
It is small.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will to embodiment or
Attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
The embodiment of the present invention for those of ordinary skill in the art without creative efforts, can be with
Other attached drawings are obtained according to the attached drawing of offer.
Fig. 1 is that the working principle scanned is realized in micro- galvanometer interaction on VCSEL chip 01 and MEMS chip 02；
Fig. 2 is a kind of laser chip package structure diagram provided in an embodiment of the present invention；
Fig. 3 is the laser scanning principle signal when the center of VCSEL chip 11 and MEMS chip 12 does not overlap
Figure；
Fig. 4 is another laser chip package structure diagram provided in an embodiment of the present invention；
Fig. 5 is another laser chip package structure diagram provided in an embodiment of the present invention；
Fig. 6 is another laser chip package structure diagram provided in an embodiment of the present invention；
Fig. 7 is that laser chip encapsulating structure is arranged in encapsulating structure in a kind of optical system provided in an embodiment of the present invention
Schematic diagram；
Fig. 8 is a kind of realization technology schematic diagram of optical system provided in an embodiment of the present invention；
Fig. 9 is a kind of laser chip packaging method flow diagram provided in an embodiment of the present invention；
Figure 10-Figure 17 is a kind of processing step schematic diagram of laser chip packaging method provided in an embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
In the prior art realize bar code scan during, the concrete principle of bar code scan referring to Figure 1, Fig. 1 VCSEL
(Vertical Cavity Surface Emitting Laser, vertical cavity surface emitting laser) chip 01 and MEMS chip
The working principle of scanning is realized in the interaction of micro- galvanometer 021 on 02；Micro- galvanometer 021 is located at the centre of MEMS chip 02
Region uses electromagnetic force as power, so that the axis of electromagnetism galvanometer electrode rotates vibration, to make coupled
Small reflector vibrates therewith, and after receiving the downward laser of the transmission of VCSEL chip 01, small reflector vibration deflects,
To achieve the effect that shuttle-scanning, as shown in fig. 1, galvanometer 021 deflects to state L2 by state L1, and the laser of reflection is along A
Direction deflects, and realizes scanning.Wherein, galvanometer 021 is two-dimensional scanning equipment, can be completed at the same time two on a galvanometer
The scanning in a direction, i.e., direction shown in the arrow A in Fig. 1, and the direction (present invention perpendicular to paper shown in FIG. 1
It does not show that).
In the prior art, VCSEL chip is usually arranged in the surface of MEMS chip, and passes through other supplementary structures
Realize that the position of the two is fixed.Supplementary structure includes the biggish ceramic substrate of thickness and frame structure, and ceramic substrate is for carrying
MEMS chip, frame structure are used to guarantee the distance of MEMS chip and VCSEL chip.It should be noted that due to VCSEL core
Piece 01 and 02 face of MEMS chip are arranged, and VCSEL chip 01 has certain area, during laser scanning, VCSEL core
Piece 01 can block a part by the light of vibration mirror reflected so that there are certain blind areas in scanning process, and if and work as
VCSEL chip 01 is closer with the galvanometer distance on MEMS chip 02, and the area of the scan blind spot of formation is bigger.In order to avoid sweeping
It is larger to retouch blind area, influences scanning result, the distance between VCSEL chip 01 and MEMS chip 02 are chosen as 1mm in the prior art
Left and right；Along with the thickness of the thickness of MEMS chip 02 and the thickness and ceramic substrate of VCSEL chip and frame structure, most
The overall package thickness of whole laser chip is thicker, causes the volume of the encapsulating structure of laser chip larger.
To solve the above-mentioned problems, the present invention provides a kind of laser chip encapsulating structure and its packaging method, uses
Fanout (is fanned out to) encapsulation that packaged type realizes MEMS chip and laser chip (VCSEL chip), to reduce laser chip
The volume of encapsulating structure.
In order to make the above objects, features, and advantages of the present application more apparent, with reference to the accompanying drawing and it is specific real
Applying mode, the present application will be further described in detail.
Fig. 2 is referred to, Fig. 2 is a kind of laser chip package structure diagram provided in an embodiment of the present invention, the laser
Chip-packaging structure includes: organic substrate 16, and the organic substrate 16 includes the first surface 161 and the second table being oppositely arranged
Face 162, and through the through-hole T of the first surface 161 and the second surface 162, the first table of the organic substrate 16
Face 161 is additionally provided with connecting pin 19, and the connecting pin 19 is used for and external circuit is electrically connected；Upside-down mounting is bundled in described organic
The first surface 161 of substrate 16, and cover the MEMS chip 12 of the through-hole T, the MEMS chip 12 is towards the organic group
The surface of plate 16 is provided with galvanometer (not shown)；The VCSEL chip 11 fixed to position, is used for the through-hole T-phase
Emit laser to the galvanometer surface；Transparent substrate 13, the transparent substrate 13 are located at the second surface of the organic substrate 16
162, and cover the through-hole T；It is described including the first interconnection circuit 17 and the second interconnection circuit 18 in the organic substrate 16
First interconnection circuit 17 is electrically connected the MEMS chip 12, and second interconnection circuit 18 is electrically connected the VCSEL chip
11, first interconnection circuit 17 and second interconnection circuit 18 are used to connect the connecting pin 19.
It should be noted that VCSEL chip 11 and the position of through-hole T are relatively fixed in the present embodiment, but do not limit
The specific location of VCSEL chip 11, optionally, VCSEL chip is fixed on transparent substrate 13 in the present embodiment, as VCSEL
Specific location of the chip 11 on transparent substrate 13, without limiting in the present embodiment.
As shown in Fig. 2, in the present embodiment VCSEL chip 11 be arranged in it is opposite with MEMS chip 12 on transparent substrate 13
Position.And the center of projection of the VCSEL chip 11 on 13 surface of transparent substrate and the MEMS chip 12 exist
The center of projection on the transparent substrate 13 is overlapped.In other embodiments of the invention, VCSEL chip 11 and MEMS core
The center of piece 12 can not also overlap, as shown in figure 3, for when the center of VCSEL chip 11 and MEMS chip 12 is not overlapped
Laser scanning schematic illustration when setting；When the galvanometer 121 in MEMS chip 12 is rotated by state L1 ' to state L2 ',
The laser beam reflected is scanned along the direction B, equally can be realized laser scanning.
It further include metallic circuit 14 on the transparent substrate 13 in the present embodiment, the metallic circuit 14 and described second
Interconnection circuit 18 is electrically connected.The other end of VCSEL chip 11 and the metallic circuit 14 is electrically connected, and VCSEL chip 11 is logical
Cross the second interconnection circuit 18 that the metallic circuit 14 being arranged on transparent substrate 13 is connected in organic substrate 16.
It can be connected directly between VCSEL chip 11 and metallic circuit 14, as shown in Figure 2, setting the can also be passed through
One conductive structure 19 is electrically connected, as shown in figure 4, the VCSEL chip 11 passes through first conductive structure 19 and institute
State the electric connection of metallic circuit 14.The first conductive structure 19 can be the conducting wire of routing formation in the present embodiment, namely such as Fig. 4
Shown in.It can also be conductive paste or pedestal, do not limited this in the present embodiment.It is not limited equally in the present embodiment
Electrical connection between second interconnection circuit 18 and metallic circuit 14, optionally, in order to guarantee 18 He of the second interconnection circuit
There is reliable electrical connection, as shown in Figure 2 and Figure 4, the second interconnection circuit 18 and metallic circuit between metallic circuit 14
Pad 15 is additionally provided between 14, the second interconnection circuit 18 is reliably electrically connected at by pad 15 with metallic circuit 14
Together.
It should be noted that VCSEL chip 11 is arranged in transparent substrate in laser chip encapsulating structure shown in Fig. 2
13 surface towards MEMS chip 12, such transparent substrate 13 can not only play the role of carrying VCSEL chip 11, also
VCSEL chip 11 can be encapsulated in the cavity that transparent substrate 13 and MEMS chip 12 and organic substrate 16 are formed, be avoided
Galvanometer on extraneous dust or ion pair MEMS chip 12 pollutes, and influences the reflection laser effect of galvanometer.
But the higher situation of use environment cleanliness for laser chip encapsulating structure or subsequent it is additionally provided with envelope
The case where package material, the laser chip encapsulating structure provided in the embodiment of the present invention can also be as shown in Fig. 5, and Fig. 5 is the present invention
Another laser chip package structure diagram that embodiment provides；VCSEL chip 11 is arranged described in the present embodiment
Bright substrate 13 deviates from the surface of the organic substrate 16.In this way, although transparent substrate 13 has functioned only as carrying VCSEL chip
11 effect, but since the surface that transparent substrate 13 deviates from organic substrate 16 is arranged in VCSEL chip 11, it can be relative to Fig. 2
Or encapsulating structure shown in Fig. 4, it is equivalent to the thickness for eliminating transparent substrate 13, the thickness of encapsulating structure can be further decreased
Degree reduces the volume of encapsulating structure entirety.
Continuing with referring to fig. 2, shown in Fig. 4 and Fig. 5, in the embodiment of the present invention, 12 upside-down mounting of MEMS chip is arranged in organic group
The specific upside-down mounting mode of MEMS chip 12 is not limited on the first surface 161 of plate 16, in the embodiment of the present invention, it optionally, can be with
It is welded by solder joint and realizes upside-down mounting, meanwhile, the solder joint is electrically connected the first interconnection circuit being arranged in organic substrate 16
17, the first interconnection circuit 17 is connected to the connecting pin 19 on organic substrate 16 for being electrically connected with external circuit, realizes MEMS
The control of chip 12, and then the rotation angle of galvanometer is controlled, realize laser scanning.
It should be noted that the connecting pin 19 being arranged on the first surface of organic substrate 16 is not limited in the present embodiment
Number, although the first interconnection circuit 17 and the second interconnection circuit 18 are all connected with the connecting pin on organic substrate 16 in the present embodiment,
But what in the present embodiment, the first interconnection circuit 17 and the second interconnection circuit 18 connected is different connecting pin 19, connecting pin 19
The interconnection circuit of connection is different, and the first interconnection circuit and the second interconnection circuit connect in effect difference namely the present embodiment
Connecting pin be different connecting pins, for connecting different external control circuits, respectively control MEMS chip in galvanometer and
The Laser emission situation of VCSEL chip.Moreover, multiple connecting pins of other effects are also provided on organic substrate 16,
For other purposes, do not limited this in the present embodiment.
VCSEL chip and the position of through-hole T are relatively fixed in the present invention, but do not limit the specific position of VCSEL chip
It sets, optionally, VCSEL chip is fixed on organic substrate in another embodiment of the presently claimed invention, as shown in fig. 6, being this hair
Another laser chip package structure diagram that bright embodiment provides, laser chip encapsulating structure include:
VCSEL chip 21, MEMS chip 22, organic substrate 26 and transparent substrate 23, wherein be arranged on organic substrate 26
There is through-hole T；MEMS chip 22 is inverted in a surface of organic substrate 26, and (namely lower surface is known as the first table in the present embodiment
Face), and cover the through-hole T；Transparent substrate 23 is fixed on another surface (namely upper surface, this implementation of organic substrate 26
It is known as second surface in example), and cover through-hole T；And VCSEL chip 21 is arranged in organic substrate 26 and transparent substrate 23 is arranged
Surface.
VCSEL chip described in the present embodiment 21 is electrical by the second conductive structure 24 and second interconnection circuit 28
Connection.MEMS chip 22 is electrically connected by the first interconnection circuit 27 with the connecting pin on organic substrate 26.In the present embodiment with
Different places is in above example, and VCSEL chip 21 is arranged in the second surface of organic substrate 26, other structures, such as
The connection of the inverted structure, the first interconnection circuit 27, the second interconnection circuit 28, connecting pin of MEMS chip 22 and organic substrate 26
Mode is all the same, this is not described in detail in the present embodiment, and same section may refer to the description in above example.
Since VCSEL chip 21 is arranged on 26 surface of organic substrate, and the direction of the shoot laser of VCSEL chip 21 is
Away from the direction of organic substrate 26, therefore the laser reflection for also needing optical system to be emitted VCSEL chip 21 is to MEMS chip
22 surface reflects the galvanometer on 22 surface of MEMS chip to laser, to realize scanning.
Specific setting position and the mode for not limiting optical system in the present embodiment, optionally, as shown in fig. 7, optical system
System is arranged in encapsulating structure namely the laser chip encapsulating structure further includes optical system 29.Optical system 29 will be described
The laser reflection away from the organic substrate 26 that VCSEL chip 21 is emitted is to being located at first surface on the organic substrate 26
Galvanometer surface.It should be noted that optical system 29 only need for the VCSEL chip 21 to be emitted away from the organic group
The laser reflection of plate 26 is to the galvanometer surface for being located at first surface on the organic substrate 26, to reflection in the present embodiment
To galvanometer surface laser direction without limitation, the surface that can be perpendicular to MEMS chip 22 is incident, be also possible to
The surface of MEMS chip 22 has certain angle.
Optional in the present embodiment, optical system 29 reflexes to the galvanometer of the first surface on the organic substrate 26
The incident laser direction on surface is the surface perpendicular to MEMS chip 22.As shown in figure 8, being light provided in an embodiment of the present invention
A kind of realization technology schematic diagram of system；The optical system 29 includes two-face mirror, two-face mirror and organic substrate
26 surface is in 45 ° of angles, so that the laser direction that vertical organic substrate 26 is emitted is reflexed to towards organic substrate 26,
And then vertical incidence is to the surface of MEMS chip 22.
It should be noted that the present invention is to transparent substrate, organic group in the embodiment of the above laser chip encapsulating structure
The material of plate without limitation, optionally, transparent substrate be glass substrate or the higher transparent material substrate of other light transmittances,
The organic substrate is PCB substrate or FPC substrate.Wherein the connecting pin on organic substrate can be solder-bump or conduction
Pad, specific choice can be set according to the actual situation, not limited this in the present embodiment.
Laser chip encapsulating structure provided in an embodiment of the present invention, MEMS chip is inverted on organic substrate, and is used
Fanout structure realizes the encapsulation of VCSEL chip and MEMS chip, due to realizing that encapsulation can be by having using Fanout structure
Circuit inside machine substrate realizes the electric connection of VCSEL chip and MEMS chip and external circuit, without other auxiliary knots
Structure, such as the biggish frame structure of volume and the thicker ceramic substrate structure of thickness, so as to realize VCSEL chip and
Integrated, the overall volume of reduction laser chip encapsulating structure of MEMS chip.
The embodiment of the present invention also provides a kind of laser chip packaging method, is used to form any of the above one embodiment institute
The laser chip encapsulating structure stated, the laser chip packaging method is as shown in Fig. 9-17, wherein Fig. 9 is laser chip encapsulation
Method flow schematic diagram, Figure 10-Figure 17 are that a kind of processing step of laser chip packaging method provided in an embodiment of the present invention is shown
It is intended to, the laser chip packaging method includes:
S101: providing organic substrate, and the organic substrate includes the first surface and second surface being oppositely arranged, and
Through the through-hole of the first surface and the second surface, the first surface of the organic substrate is additionally provided with connecting pin, institute
State connecting pin for and external circuit electric connection；And the first interconnection circuit and second in the organic substrate is mutually
Join circuit, first interconnection circuit and second interconnection circuit are used to connect the connecting pin；
As shown in Figure 10 and Figure 11, Figure 10 is that the overlooking structure diagram of the plate 31 is cut in subsequent steps
After cutting, the plate 31 is divided into multiple organic substrates 6.Figure 11 is the schematic diagram of the section structure of the Figure 10 along CC ' line.It is provided with
Machine substrate specifically includes:
One plate 31 is provided, the plate 31 includes the encapsulation region 32 of multiple array arrangements, the adjacent encapsulation region 32 it
Between there is Cutting Road 30, the encapsulation region 32 includes the first area D and second area E for surrounding the first area D.Institute
It states first area D and is used to form through-hole T in the follow-up process.
The connecting pin that the encapsulation region 32 is provided with wired circuit and is electrically connected with the wired circuit；The wiring
Circuit includes the first interconnection circuit 7 for MEMS chip to be electrically connected with external circuit and is used for VCSEL chip and external
Second interconnection circuit 8 of circuit electrical connection and connecting pin 9.
Referring to Figure 12, the through-hole T for running through the plate 31 is formed in the first area D of each encapsulation region 32.
The unlimited concrete technology for being shaped as through-hole T in the present embodiment, optionally, through-hole T can pass through laser, photoetching work
Skill, wet-etching technology, mechanical milling tech or other any similar methods are formed.In one embodiment of the application
In, photoresist is coated on 6 surface of organic substrate first, mask plate then is set on photoresist surface, is with the mask plate
The mask patterning photoresist carries out photoetching to plate 31 using remaining photoresist after patterning as exposure mask, in each envelope
Fill the through-hole T for being formed in the first area A in area 32 and running through the plate 31.
S102: MEMS chip, VCSEL chip and transparent substrate are provided；
MEMS chip described in the present embodiment is to have completed, and be formed on a surface of MEMS chip
The chip of galvanometer and solder joint.
VCSEL chip is that after being connected to external circuit, can launch the VCSEL chip of laser.
S103: being bundled in the first surface of the organic substrate for the MEMS chip upside-down mounting, and cover the through-hole,
The MEMS chip and first interconnection circuit are electrically connected；
It is shown in Figure 13, the upside-down mounting of MEMS chip 2 is realized by reverse installation process, by the galvanometer surface of MEMS chip 2
Electricity is interconnected towards in the through-hole T upside-down mounting to the first surface 61 of organic substrate 6, and by the solder joint and first on MEMS chip 2
Road 7 is electrically connected.
S104: the VCSEL chip and second interconnection circuit are electrically connected；
The concrete mode that VCSEL chip and the second interconnection circuit are electrically connected is not limited in the present embodiment, optionally,
In one embodiment of the present of invention, referring to Figure 14, transparent base is being provided, while 3, metal electricity is set on transparent substrate 3
Road 4.
Then, the VCSEL chip 1 is bundled on the transparent substrate 3, is made by the first conductive structure described
VCSEL chip 1 and the metallic circuit 4 are electrically connected；The first conductive structure uses the form of conductive paste in the present embodiment,
In the other embodiment of the present invention, the first conductive structure can also be the structure of the electric connections such as conducting wire.
S105: the transparent substrate is mounted on to the second surface of the organic substrate, and covers the through-hole.
Referring to Figure 15, the transparent substrate 3 is fixed on the second surface 62 of organic substrate 6, and cover through-hole T.
After transparent substrate 3 is fixed on organic substrate 6, by conductive paste by transparent substrate metallic circuit 4 with it is described organic
The second interconnection circuit 8 on substrate 6 is electrically connected.It in other embodiments of the invention can also be by solder joint 5 by transparent base
The second interconnection circuit 8 in metallic circuit 4 and organic substrate 6 on plate 3 is electrically connected, and is not done in the embodiment of the present invention to this
It limits.
It should be noted that in another embodiment of the present invention, organic substrate can also be arranged in VCSEL chip 1
It on 6 second surface 62, and is not arranged on transparent substrate 3, the transparent substrate 3 provided at this time is only package substrate, thereon
Face is not provided with metallic circuit.
Referring to Figure 16, VCSEL chip 1 is arranged on the second surface 62 of organic substrate 6, and conductive by second
Structure 10 is electrically connected on the second interconnection circuit 8.The second conductive structure 10 is conducting wire in the present embodiment, in its of the invention
In his embodiment, the second conductive structure can also be the structures such as conductive paste or solder joint, not limit this in the present embodiment.
Finally, again referring to Figure 17, the transparent substrate 3 for playing encapsulation effect is fixed on to the second table of organic substrate 6
Face, and cover through-hole T, thus by the galvanometer on MEMS chip 2 be encapsulated in organic substrate 6 and MEMS chip 2 and it is transparent gradually
Become in the cavity that 3 form.
Laser chip packaging method provided in an embodiment of the present invention can obtain laser core described in above example
Chip package, so that the integrated level of the encapsulation of laser chip and MEMS chip is higher, volume reduces.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation with another entity or operate distinguish, without necessarily requiring or implying these entities or operation it
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that article or equipment including a series of elements not only include those elements, and
It and further include other elements that are not explicitly listed, or further include for this article or the intrinsic element of equipment.?
Do not have in the case where more limiting, the element limited by sentence "including a ...", it is not excluded that including above-mentioned element
There is also other identical elements in article or equipment.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, defined herein
General Principle can realize in other embodiments without departing from the spirit or scope of the present invention.Therefore, originally
Invention is not intended to be limited to the embodiments shown herein, and is to fit to special with principles disclosed herein and novelty
The consistent widest scope of point.
Claims (19)
1. a kind of laser chip encapsulating structure characterized by comprising
Organic substrate, the organic substrate include the first surface and second surface being oppositely arranged, and run through first table
The through-hole in face and the second surface, the first surface of the organic substrate are additionally provided with connecting pin, the connecting pin be used for and
External circuit is electrically connected；
Upside-down mounting is bundled in the first surface of the organic substrate, and covers the MEMS chip of the through-hole, the MEMS chip court
The surface of the organic substrate is provided with galvanometer；
The fixed VCSEL chip with the through-hole relative position, for emitting laser to the galvanometer surface；
Transparent substrate, the transparent substrate is located at the second surface of the organic substrate, and covers the through-hole；
It include the first interconnection circuit and the second interconnection circuit in the organic substrate, described in first interconnection circuit is electrically connected
MEMS chip, second interconnection circuit are electrically connected the VCSEL chip, first interconnection circuit and second interconnection
Circuit is used to connect the connecting pin.
2. laser chip encapsulating structure according to claim 1, which is characterized in that further include metal on the transparent substrate
Circuit, the metallic circuit and second interconnection circuit are electrically connected.
3. laser chip encapsulating structure according to claim 2, which is characterized in that the VCSEL chip is arranged described
On transparent substrate, and it is electrically connected with the metallic circuit.
4. laser chip encapsulating structure according to claim 3, which is characterized in that the VCSEL chip is arranged described
Transparent substrate is towards the surface of the organic substrate.
5. laser chip encapsulating structure according to claim 4, which is characterized in that it further include the first conductive structure, it is described
VCSEL chip is electrically connected by first conductive structure and the metallic circuit.
6. laser chip encapsulating structure according to claim 5, which is characterized in that first conductive structure be conducting wire,
Conductive paste or pedestal.
7. laser chip encapsulating structure according to claim 3, which is characterized in that the VCSEL chip is arranged described
Transparent substrate deviates from the surface of the organic substrate.
8. according to laser chip encapsulating structure described in claim 2-7 any one, which is characterized in that the VCSEL chip
The center of projection on the transparent substrate surface and the center weight of projection of the MEMS chip on the transparent substrate
It is folded.
9. laser chip encapsulating structure according to claim 1, which is characterized in that the VCSEL chip is arranged described
The second surface of organic substrate, shoot laser direction deviate from the organic substrate.
10. laser chip encapsulating structure according to claim 9, which is characterized in that the VCSEL chip is led by second
Electric structure and second interconnection circuit are electrically connected.
11. laser chip encapsulating structure according to claim 10, which is characterized in that second conductive structure is to lead
Line, conductive paste or pedestal.
12. according to laser chip encapsulating structure described in claim 9-11 any one, which is characterized in that further include optical system
System, the laser reflection away from the organic substrate that the VCSEL chip is emitted by the optical system are described organic to being located at
The galvanometer surface of first surface on substrate.
13. laser chip encapsulating structure according to claim 1, which is characterized in that the transparent substrate is glass substrate.
14. laser chip encapsulating structure according to claim 1, which is characterized in that the connecting pin be solder-bump or
Conductive welding disk.
15. laser chip encapsulating structure according to claim 1, which is characterized in that the organic substrate be pcb board or
FPC plate.
16. a kind of laser chip packaging method, which is characterized in that be used to form laser described in claim 1-15 any one
Chip-packaging structure, the laser chip packaging method include:
Organic substrate is provided, the organic substrate includes the first surface and second surface being oppositely arranged, and through described the
The through-hole on one surface and the second surface, the first surface of the organic substrate are additionally provided with connecting pin, and the connecting pin is used
It is electrically connected in external circuit；And the first interconnection circuit and the second interconnection circuit in the organic substrate, it is described
First interconnection circuit and second interconnection circuit are used to connect the connecting pin；
MEMS chip, VCSEL chip and transparent substrate are provided；
The MEMS chip upside-down mounting is bundled in the first surface of the organic substrate, and covers the through-hole, the MEMS core
Piece and first interconnection circuit are electrically connected；
The VCSEL chip and second interconnection circuit are electrically connected；
The transparent substrate is mounted on to the second surface of the organic substrate, and covers the through-hole.
17. laser chip packaging method according to claim 16, which is characterized in that further include:
Metallic circuit is set on the transparent substrate.
18. laser chip packaging method according to claim 17, which is characterized in that it is described by the VCSEL chip with
Second interconnection circuit is electrically connected, and is specifically included:
By the VCSEL chip bonding on the transparent substrate, the VCSEL chip is electrically connected by the first conductive structure
With the metallic circuit；
Metallic circuit on the transparent substrate is electrically connected by conductive paste with the second interconnection circuit on the organic substrate
It connects.
19. laser chip packaging method according to claim 16, which is characterized in that it is described by the VCSEL chip with
Second interconnection circuit is electrically connected, and is specifically included:
The VCSEL chip is tied on the second surface of the organic substrate by the second conductive structure, described second leads
Electric structure and second interconnection circuit are electrically connected.
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| CN201810972535.3A CN109119885B (en) | 2018-08-24 | 2018-08-24 | Laser chip packaging structure and packaging method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111977609A (en) * | 2020-08-28 | 2020-11-24 | 青岛歌尔智能传感器有限公司 | Sensor packaging structure and sensor packaging process |
| CN112388155A (en) * | 2020-12-01 | 2021-02-23 | 强一半导体（苏州）有限公司 | MEMS probe laser etching device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002246682A (en) * | 2000-12-06 | 2002-08-30 | Xerox Corp | Micro electric/mechanical mechanism |
| US20140253925A1 (en) * | 2013-03-07 | 2014-09-11 | Canon Kabushiki Kaisha | Surface emitting laser and optical coherence tomography apparatus equipped with surface emitting laser |
| US20160056613A1 (en) * | 2013-07-03 | 2016-02-25 | Inphenix, Inc. | Wavelength-tunable vertical cavity surface emitting laser for swept source optical coherence tomography system |
| CN108063126A (en) * | 2017-12-29 | 2018-05-22 | 苏州晶方半导体科技股份有限公司 | The encapsulating structure and method for packing of a kind of chip |
| CN207625073U (en) * | 2017-12-06 | 2018-07-17 | 北京万集科技股份有限公司 | A kind of scanning semiconductor laser device based on MEMS |
-
2018
- 2018-08-24 CN CN201810972535.3A patent/CN109119885B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002246682A (en) * | 2000-12-06 | 2002-08-30 | Xerox Corp | Micro electric/mechanical mechanism |
| US20140253925A1 (en) * | 2013-03-07 | 2014-09-11 | Canon Kabushiki Kaisha | Surface emitting laser and optical coherence tomography apparatus equipped with surface emitting laser |
| US20160056613A1 (en) * | 2013-07-03 | 2016-02-25 | Inphenix, Inc. | Wavelength-tunable vertical cavity surface emitting laser for swept source optical coherence tomography system |
| CN207625073U (en) * | 2017-12-06 | 2018-07-17 | 北京万集科技股份有限公司 | A kind of scanning semiconductor laser device based on MEMS |
| CN108063126A (en) * | 2017-12-29 | 2018-05-22 | 苏州晶方半导体科技股份有限公司 | The encapsulating structure and method for packing of a kind of chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111977609A (en) * | 2020-08-28 | 2020-11-24 | 青岛歌尔智能传感器有限公司 | Sensor packaging structure and sensor packaging process |
| CN112388155A (en) * | 2020-12-01 | 2021-02-23 | 强一半导体（苏州）有限公司 | MEMS probe laser etching device |
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|---|---|
| CN109119885B (en) | 2020-05-19 |
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