CN207625073U - A kind of scanning semiconductor laser device based on MEMS - Google Patents
A kind of scanning semiconductor laser device based on MEMS Download PDFInfo
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- CN207625073U CN207625073U CN201721687293.0U CN201721687293U CN207625073U CN 207625073 U CN207625073 U CN 207625073U CN 201721687293 U CN201721687293 U CN 201721687293U CN 207625073 U CN207625073 U CN 207625073U
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- semiconductor laser
- mems
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- collimation lens
- mems galvanometers
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 16
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 30
- 230000003287 optical effect Effects 0.000 claims description 17
- 238000005538 encapsulation Methods 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 241000218202 Coptis Species 0.000 claims description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 3
- 238000010009 beating Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The utility model provides a kind of scanning semiconductor laser device based on MEMS, including：Package substrates, semiconductor laser chip, collimation lens and MEMS galvanometers；The package substrates are for the semiconductor laser chip, the collimation lens and the MEMS galvanometers to be packaged together, and the relative position between fixed three；The semiconductor laser chip is for emitting laser beam；The collimation lens is for collimating the laser beam；The MEMS galvanometers are used to carry out reflection to the laser beam so that the exit direction of the laser beam deflects；The MEMS galvanometers are of reciprocating vibration in two-dimensional space under the driving of drive signal so that become scanning laser light beam from the laser beam of the MEMS vibration mirror reflecteds.The utility model substantially reduces the size of laser light source, reduces pressure for post laser scanning and shaping, is more advantageous to the miniaturization of laser sensor.
Description
Technical field
The utility model is related to semiconductor laser fields, and in particular to a kind of scan-type semiconductor based on MEMS
Laser.
Background technology
With the maturation of technology, the application of semiconductor laser is also more and more extensive, since semiconductor laser is small,
Feature at low cost, being applied in commercialized laser sensor has huge market.
But semiconductor laser generally requires the larger sweep unit of cooperation volume in use, such as rotation is instead
Mirror is penetrated, to realize the scanning of light beam.
In order to further reduce the size of laser sensor, a kind of semiconductor laser light resource that miniaturization is integrated is needed.
Utility model content
For the defects in the prior art, the utility model provides a kind of scanning semiconductor laser device based on MEMS,
The utility model substantially reduces the size of laser light source, reduces pressure for post laser scanning and shaping, is more advantageous to sharp
The miniaturization of optical sensor.
To achieve the above object, the utility model provides following technical scheme：
A kind of scanning semiconductor laser device based on MEMS, including：Package substrates, semiconductor laser chip, collimation
Lens and MEMS galvanometers；
The package substrates are used to encapsulate the semiconductor laser chip, the collimation lens and the MEMS galvanometers
Together, and the relative position between three is fixed；
The semiconductor laser chip is for emitting laser beam；
The collimation lens is for collimating the laser beam；
The MEMS galvanometers are used to carry out reflection to the laser beam so that the exit direction of the laser beam deflects；
Wherein, the MEMS galvanometers are of reciprocating vibration in two-dimensional space under the driving of drive signal so that by described
The laser beam of MEMS vibration mirror reflecteds becomes scanning laser light beam.
Preferably, the collimation lens is between the semiconductor laser chip and the MEMS galvanometers, and described half
The laser beam of conductor laser chip emission, will be sharp after collimation by the MEMS galvanometers after collimation lens collimation
Light light beam is into horizontal deflection.
Preferably, the MEMS galvanometers are between the semiconductor laser chip and the collimation lens, and described half
The laser beam of conductor laser chip emission is carried out after the MEMS galvanometers are deflected into line direction by the collimation lens
Collimation.
Preferably, it is flat in the first dimension vibration to vibrate shaft under the driving of drive signal around the first dimension for the MEMS galvanometers
Surface vibration and around two-dimension vibration shaft second tie up plane of oscillation internal vibration；Wherein, it is described first dimension vibration shaft with
The luminescent segment of the semiconductor laser chip is in same plane, the two-dimension vibration shaft and the semiconductor laser core
The luminescent segment of piece is vertical.
Preferably, the optical axis coincidence of the semiconductor laser chip and the collimation lens, the light of the collimation lens
Axle position is in the minute surface center of the MEMS galvanometers, the light of the mirror normal and the collimation lens of the MEMS galvanometers initial position
Axis is in 45 degree of angles.
Preferably, the package substrates include：Semiconductor laser chip pedestal, MEMS galvanometers chip pad, collimation are saturating
Mirror pedestal and encapsulation egative film；
The semiconductor laser chip pedestal is for encapsulating the semiconductor laser chip and fixing its position；
The MEMS galvanometers chip pad is for encapsulating the MEMS galvanometers and fixing its position；
The collimation lens pedestal is for fixing the collimation lens；
The encapsulation egative film be used to support and fix the semiconductor laser chip pedestal, MEMS galvanometers chip pad and
Collimation lens pedestal.
Preferably, the front end setting of the semiconductor laser chip pedestal is jagged, to prevent from semiconductor laser
The divergent beams of chip outgoing are blocked.
Preferably, the upper surface of the semiconductor laser chip pedestal is coated with one layer of gold as electrode, and by one
The semiconductor laser chip pedestal is divided into left and right side two parts by stria mouth, and left side is anode, and right side is cathode；
Correspondingly, the downside of the semiconductor laser chip is anode, is placed directly against the semiconductor laser chip
The left side of pedestal, to ensure the optical axis coincidence of the optical axis and the collimation lens of outgoing beam, the semiconductor laser chip
Cathode be connected with the cathode of the semiconductor laser chip pedestal by way of beating gold thread.
Preferably, the semiconductor laser further includes：Peripheral control unit, the peripheral control unit is for exporting control institute
State the drive signal of MEMS galvanometers vibration.
As shown from the above technical solution, the scanning semiconductor laser device provided by the utility model based on MEMS, will be partly
Conductor laser chip, collimation lens and MEMS galvanometer threes are packaged together, and realize semiconductor laser emerging beam
Collimation and laser beam scanning, substantially reduce the size of light source used in laser sensor, for post laser scan with
And shaping reduces pressure, is more advantageous to the miniaturization of laser sensor.
Description of the drawings
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is this
Some embodiments of utility model, for those of ordinary skill in the art, without creative efforts, also
It can be obtain other attached drawings according to these attached drawings.
Fig. 1 is the structural schematic diagram for the scanning semiconductor laser device based on MEMS that the utility model embodiment provides；
Fig. 2 is the structural schematic diagram of package substrates；
Fig. 3 is the operation principle signal for the scanning semiconductor laser device based on MEMS that the utility model embodiment provides
Figure；
Wherein, the label meaning above in each figure is as follows：
100 indicate semiconductor laser chip；101 indicate static emergent light；102 indicate scanning emergent light；200 indicate
MEMS galvanometers；300 indicate collimation lens；301 indicate collimation lens optical axis；400 indicate package substrates；401 indicate that semiconductor swashs
Light device chip pad；402 indicate MEMS galvanometer chip pads；403 indicate collimation lens pedestal；404 indicate encapsulation egative film；405
Indicate Laser Driven anode；406 indicate Laser Driven cathode；407 indicate the poles GN 1；408 indicate the poles GN 2；409 expression MEMS shake
The X-direction driving stage of mirror；410 indicate the Y-direction driving stage of MEMS galvanometers；501 indicate the first dimension vibration shaft；502 indicate the
Two-dimension vibration shaft；503 indicate T0Light beam；504 indicate T1Light beam；505 indicate T1Deflection component of the light beam in X-direction；506 tables
Show T1The deflection component of light beam in the Y direction.
Specific implementation mode
It is new below in conjunction with this practicality to keep the purpose, technical scheme and advantage of the utility model embodiment clearer
Attached drawing in type embodiment carries out clear, complete description, it is clear that retouched to the technical scheme in the embodiment of the utility model
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model
Example, the every other embodiment that those of ordinary skill in the art are obtained without creative efforts belong to
The range of the utility model protection.
The utility model embodiment provides a kind of scanning semiconductor laser device based on MEMS, and referring to Fig. 1, this is partly led
Body laser includes：Package substrates 400, semiconductor laser chip 100, MEMS galvanometers 200 and collimation lens 300；
The package substrates 400 are used for the semiconductor laser chip 100, the MEMS galvanometers 200 and the standard
Straight lens 300 are packaged together, and the relative position between fixed three；
The semiconductor laser chip 100 is for emitting laser beam；
The MEMS galvanometers 200 are used to carry out reflection to the laser beam so that the exit direction of the laser beam is inclined
Turn；
The collimation lens 300 is for collimating the laser beam；
Wherein, the MEMS galvanometers 200 are of reciprocating vibration in two-dimensional space under the driving of drive signal so that by described
The laser beam that MEMS galvanometers 200 reflect becomes scanning laser light beam.
Referring to Fig. 1, the collimation lens 300 be located at the semiconductor laser chip 100 and the MEMS galvanometers 200 it
Between, semiconductor laser chip (namely semiconductor laser tube core) 100 launches the laser beam of a misconvergence of beams, and diverging swashs
Light light beam is collimated after collimation lens 300, and MEMS galvanometers 200 are located at the front of collimation lens, and MEMS galvanometers 200 can be
It is vibrated on two-dimensional directional, and both direction is orthogonal, realizes the deflection of laser beam in the two-dimensional direction.Initial shape
301 angle of optical axis of the minute surface of MEMS galvanometers and collimation lens is 45 degree under state, and the laser beam after collimation passes through MEMS galvanometers
90 degree of optical path-deflecting, are finally emitted after 200.MEMS galvanometers 200 are of reciprocating vibration in two-dimensional space after being driven, swashing after collimation
Light light beam 101 becomes scanning laser light beam 102.
In the present embodiment, the collimation lens 300 is located at the semiconductor laser chip 100 and the MEMS galvanometers
Between 200, in other embodiments, the collimation lens 300 can also be located at after MEMS galvanometers 200 namely described partly lead
Body laser chip 100 emits laser beam, and after MEMS galvanometers 200, then standard is passed through in the transmitting deflection of laser beam light path
Straight lens 300, collimation outgoing.
Fig. 2 is the structural schematic diagram of package substrates provided in this embodiment.The package substrates 400 include mainly following several
Part：Semiconductor laser chip pedestal 401, MEMS galvanometers chip pad 402, collimation lens pedestal 403 and encapsulation egative film
404。
The semiconductor laser chip pedestal 401 is for encapsulating the semiconductor laser chip 100.Preferably, institute
It is jagged to state the setting of 401 front end of semiconductor laser chip pedestal, to prevent the diverging being emitted from semiconductor laser chip 100
Light beam is blocked.In addition, 401 upper surface of semiconductor laser chip pedestal is gold-plated to be used as electrode, and by a stria
The semiconductor laser chip pedestal 401 is divided into two parts by mouth, and left side is anode, and right side is cathode.The semiconductor swashs
100 downside of light device chip is anode, the left side of the semiconductor laser chip pedestal 401 is placed directly against, to ensure emergent light
The optical axis of beam is overlapped with the optical axis 301 of the collimation lens, and the cathode of the semiconductor laser chip 100 is by beating gold thread
Mode is connected with the cathode of the semiconductor laser chip pedestal 401.
The collimation lens pedestal 403 is used for fixing the collimation lens 300, the MEMS galvanometers chip pad 402
In encapsulating the MEMS galvanometers 200, its position is fixed, and be powered for its work.The encapsulation egative film 404, for fixing
The semiconductor laser chip 100, the MEMS galvanometers 200 and the collimation lens 300.
The package substrates 400 need to ensure the semiconductor laser chip 100 and the collimation lens in setting
300 optical axis coincidence, the optical axis 301 of the collimation lens are located at the minute surface center of the MEMS galvanometers 200, while described in guarantee
The optical axis 301 of the mirror normal of MEMS galvanometers and the collimation lens is in 45 degree of angles.
Preferably, referring to Fig. 2,400 bottom of the package substrates is provided with 6 electrode pins, respectively Laser Driven
Anode 405,406 (not shown) of Laser Driven cathode, the poles GN 1407, the poles GN 2 408 (not shown)s, MEMS galvanometers
410 (not shown) of Y-direction driving stage of X-direction driving stage 409, MEMS galvanometers.Laser Driven anode 405 and described
Laser Driven cathode 406, for providing high-voltage signal for the semiconductor laser chip 100 so that the semiconductor laser
Device chip 100 shines.The X-direction driving stage 409 of the MEMS galvanometers, for being vibrated in X-direction for the MEMS galvanometers 200
Drive signal, the Y-direction driving stage 410 of the MEMS galvanometers, for being vibrated in X-direction for the MEMS galvanometers 200 are provided
Drive signal is provided.
Fig. 3 is the operation principle schematic diagram of the scanning semiconductor laser device provided in this embodiment based on MEMS.Referring to
Fig. 3, the MEMS galvanometers 200 vibrate shaft 501 around the first dimension under the driving of drive signal and shake in the first dimension plane of oscillation
It moves and ties up plane of oscillation internal vibration second around two-dimension vibration shaft 502；Wherein, the first dimension vibration shaft 501
Luminescent segment with the semiconductor laser chip 100 is in same plane, the two-dimension vibration shaft 502 and the semiconductor
The luminescent segment of chip of laser 100 is vertical.
Peripheral control unit is powered by above-mentioned electrode 405~410 for semiconductor laser, the Laser Driven anode
405 and the Laser Driven cathode 406, after receiving high-voltage pulse signal, the semiconductor laser chip 100 is driven to send out
Go out light beam, beam divergence angle at this time is bigger, energy relative distribution, and laser beam is after the collimation lens 300, hair
Scattered angle becomes smaller.Compressed laser beam is incident on the MEMS galvanometers 200, and while lasing fluorescence, the MEMS shakes
The Y-direction driving stage 410 of the X-direction driving stage 409 of mirror and the MEMS galvanometers also receives drive signal, in X-direction and Y
Axis direction is vibrated.Wherein, X-direction and Y direction are mutually perpendicular to.
It is understood that the Y-direction driving stage of the X-direction driving stage 409 of the MEMS galvanometers, the MEMS galvanometers
410 drive signal and the drive signal of semiconductor laser chip 100 codetermined outgoing beam scan mode and
Scan dot density.
Referring to Fig. 3, in T0Moment, the semiconductor laser chip send out beam of laser pulse, and the MEMS shakes at this time
Mirror deflection angle is θ0, laser pulse exit direction is T0Light beam 503, in T1Moment, the semiconductor laser chip send out one
Beam laser pulse T1Light beam 504 compares T0At the moment, the MEMS galvanometers 200 are α, the MEMS in X-direction deflection angle at this time
Deflection angle is β to galvanometer 200 in the Y direction, and laser pulse exit direction is T1Light beam 504, T1Deflection component of the light beam in X-direction
Equal to 2 α；T1The deflection component of light beam in the Y direction is equal to 2 β.In Fig. 3,505 indicate T1Light beam X-direction deflection component, 506
Indicate T1The deflection component of light beam in the Y direction.
As seen from the above description, the scanning semiconductor laser device provided in this embodiment based on MEMS, semiconductor is swashed
Light device chip, collimation lens and MEMS galvanometer threes are packaged together, and realize the collimation of semiconductor laser emerging beam
And the scanning of laser beam, the size of light source used in laser sensor is substantially reduced, for post laser scanning and shaping
Reduce pressure, is more advantageous to the miniaturization of laser sensor.
Above example is merely to illustrate the technical solution of the utility model, rather than its limitations；Although with reference to aforementioned reality
Example is applied the utility model is described in detail, it will be understood by those of ordinary skill in the art that：It still can be to preceding
The technical solution recorded in each embodiment is stated to modify or equivalent replacement of some of the technical features；And these
Modifications or substitutions, the spirit and model of various embodiments of the utility model technical solution that it does not separate the essence of the corresponding technical solution
It encloses.
Claims (9)
1. a kind of scanning semiconductor laser device based on MEMS, which is characterized in that including：Package substrates, semiconductor laser
Chip, collimation lens and MEMS galvanometers；
The package substrates are used to the semiconductor laser chip, the collimation lens and the MEMS galvanometers being encapsulated in one
It rises, and the relative position between fixed three；
The semiconductor laser chip is for emitting laser beam；
The collimation lens is for collimating the laser beam；
The MEMS galvanometers are used to carry out reflection to the laser beam so that the exit direction of the laser beam deflects；
Wherein, the MEMS galvanometers are of reciprocating vibration in two-dimensional space under the driving of drive signal so that are shaken by the MEMS
The laser beam of mirror reflection becomes scanning laser light beam.
2. semiconductor laser according to claim 1, which is characterized in that the collimation lens is located at the semiconductor and swashs
Between light device chip and the MEMS galvanometers, the laser beam of the semiconductor laser chip transmitting passes through the collimation lens
After collimation, by the MEMS galvanometers by the laser beam after collimation into horizontal deflection.
3. semiconductor laser according to claim 1, which is characterized in that the MEMS galvanometers are located at the semiconductor and swash
Between light device chip and the collimation lens, the laser beam of the semiconductor laser chip transmitting passes through the MEMS galvanometers
After being deflected into line direction, collimated by the collimation lens.
4. semiconductor laser according to claim 1, which is characterized in that driving of the MEMS galvanometers in drive signal
Two-dimension vibration shaft to be vibrated and surrounds in the first dimension plane of oscillation flat in two-dimension vibration around the first dimension vibration shaft down
In plane vibration；Wherein, the luminescent segment of the first dimension vibration shaft and the semiconductor laser chip is described in same plane
Two-dimension vibration shaft is vertical with the luminescent segment of the semiconductor laser chip.
5. semiconductor laser according to claim 1, which is characterized in that the semiconductor laser chip and the standard
The optical axis coincidence of straight lens, the optical axis of the collimation lens are located at the minute surface center of the MEMS galvanometers, at the beginning of the MEMS galvanometers
The optical axis of the mirror normal of beginning position and the collimation lens is in 45 degree of angles.
6. semiconductor laser according to claim 1, which is characterized in that the package substrates include：Semiconductor laser
Device chip pad, MEMS galvanometers chip pad, collimation lens pedestal and encapsulation egative film；
The semiconductor laser chip pedestal is for encapsulating the semiconductor laser chip and fixing its position；
The MEMS galvanometers chip pad is for encapsulating the MEMS galvanometers and fixing its position；
The collimation lens pedestal is for fixing the collimation lens；
The encapsulation egative film is used to support and fixes the semiconductor laser chip pedestal, MEMS galvanometers chip pad and collimation
Lens mount.
7. semiconductor laser according to claim 6, which is characterized in that before the semiconductor laser chip pedestal
End setting is jagged, to prevent the divergent beams being emitted from semiconductor laser chip to be blocked.
8. semiconductor laser according to claim 6, which is characterized in that the semiconductor laser chip pedestal it is upper
Surface is coated with one layer of gold as electrode, and the semiconductor laser chip pedestal is divided into left side and the right side by a stria mouth
Side two parts, left side are anode, and right side is cathode；
Correspondingly, the downside of the semiconductor laser chip is anode, is placed directly against the semiconductor laser chip pedestal
Left side, to ensure the optical axis coincidence of the optical axis and the collimation lens of outgoing beam, the semiconductor laser chip it is negative
Pole is connected by way of beating gold thread with the cathode of the semiconductor laser chip pedestal.
9. semiconductor laser according to claim 1, which is characterized in that further include：Peripheral control unit, the external control
Device processed is used to export the drive signal for controlling the MEMS galvanometers vibration.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721687293.0U CN207625073U (en) | 2017-12-06 | 2017-12-06 | A kind of scanning semiconductor laser device based on MEMS |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721687293.0U CN207625073U (en) | 2017-12-06 | 2017-12-06 | A kind of scanning semiconductor laser device based on MEMS |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109103743A (en) * | 2018-09-21 | 2018-12-28 | 苏州晶方半导体科技股份有限公司 | A kind of encapsulating structure and its packaging method of laser chip |
| CN109119885A (en) * | 2018-08-24 | 2019-01-01 | 苏州晶方半导体科技股份有限公司 | A kind of laser chip encapsulating structure and its packaging method |
| CN110686772A (en) * | 2019-11-08 | 2020-01-14 | 中国科学院长春光学精密机械与物理研究所 | Solar irradiance simulation light source based on laser |
| CN110907915A (en) * | 2018-09-14 | 2020-03-24 | 通用汽车环球科技运作有限责任公司 | Chip-scale laser radar with enhanced distance performance |
| CN110988911A (en) * | 2018-10-02 | 2020-04-10 | 通用汽车环球科技运作有限责任公司 | Hybrid optical phased array and MEMS beam control for chip-scale lidar systems |
| CN111799647A (en) * | 2020-07-06 | 2020-10-20 | 中国人民解放军战略支援部队航天工程大学 | Miniaturized, automatic reciprocating scanning high power laser |
| WO2021109594A1 (en) * | 2019-12-04 | 2021-06-10 | 南京先进激光技术研究院 | Semiconductor laser debugging apparatus for laser mems scanning projection module |
| CN112958958A (en) * | 2021-02-08 | 2021-06-15 | 西安知象光电科技有限公司 | MEMS micro-mirror scanning and line scanning mixed laser welding seam scanning device and scanning method |
| CN113534446A (en) * | 2021-06-04 | 2021-10-22 | 北京控制工程研究所 | Laser micro-propulsion optical system regulated and controlled by micro-vibration mirror |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119885A (en) * | 2018-08-24 | 2019-01-01 | 苏州晶方半导体科技股份有限公司 | A kind of laser chip encapsulating structure and its packaging method |
| CN110907915B (en) * | 2018-09-14 | 2023-07-04 | 通用汽车环球科技运作有限责任公司 | Chip-level laser radar with enhanced range performance |
| CN110907915A (en) * | 2018-09-14 | 2020-03-24 | 通用汽车环球科技运作有限责任公司 | Chip-scale laser radar with enhanced distance performance |
| CN109103743B (en) * | 2018-09-21 | 2020-05-19 | 苏州晶方半导体科技股份有限公司 | Packaging structure and packaging method of laser chip |
| CN109103743A (en) * | 2018-09-21 | 2018-12-28 | 苏州晶方半导体科技股份有限公司 | A kind of encapsulating structure and its packaging method of laser chip |
| CN110988911A (en) * | 2018-10-02 | 2020-04-10 | 通用汽车环球科技运作有限责任公司 | Hybrid optical phased array and MEMS beam control for chip-scale lidar systems |
| CN110988911B (en) * | 2018-10-02 | 2023-08-15 | 通用汽车环球科技运作有限责任公司 | Hybrid optical phased array and MEMS beam control for chip-scale lidar systems |
| CN110686772A (en) * | 2019-11-08 | 2020-01-14 | 中国科学院长春光学精密机械与物理研究所 | Solar irradiance simulation light source based on laser |
| WO2021109594A1 (en) * | 2019-12-04 | 2021-06-10 | 南京先进激光技术研究院 | Semiconductor laser debugging apparatus for laser mems scanning projection module |
| CN111799647A (en) * | 2020-07-06 | 2020-10-20 | 中国人民解放军战略支援部队航天工程大学 | Miniaturized, automatic reciprocating scanning high power laser |
| CN111799647B (en) * | 2020-07-06 | 2021-10-12 | 中国人民解放军战略支援部队航天工程大学 | Miniaturized, automatic reciprocating scanning high power laser |
| CN112958958A (en) * | 2021-02-08 | 2021-06-15 | 西安知象光电科技有限公司 | MEMS micro-mirror scanning and line scanning mixed laser welding seam scanning device and scanning method |
| CN113534446A (en) * | 2021-06-04 | 2021-10-22 | 北京控制工程研究所 | Laser micro-propulsion optical system regulated and controlled by micro-vibration mirror |
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