CN109119885B - Laser chip packaging structure and packaging method thereof - Google Patents

Laser chip packaging structure and packaging method thereof Download PDF

Info

Publication number
CN109119885B
CN109119885B CN201810972535.3A CN201810972535A CN109119885B CN 109119885 B CN109119885 B CN 109119885B CN 201810972535 A CN201810972535 A CN 201810972535A CN 109119885 B CN109119885 B CN 109119885B
Authority
CN
China
Prior art keywords
chip
organic substrate
vcsel
laser
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810972535.3A
Other languages
Chinese (zh)
Other versions
CN109119885A (en
Inventor
王之奇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Wafer Level CSP Co Ltd
Original Assignee
China Wafer Level CSP Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Wafer Level CSP Co Ltd filed Critical China Wafer Level CSP Co Ltd
Priority to CN201810972535.3A priority Critical patent/CN109119885B/en
Publication of CN109119885A publication Critical patent/CN109119885A/en
Application granted granted Critical
Publication of CN109119885B publication Critical patent/CN109119885B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/085—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by electromagnetic means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/105—Scanning systems with one or more pivoting mirrors or galvano-mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate

Abstract

The application discloses laser chip packaging structure and packaging method thereof, the packaging structure includes: organic substrate, flip-chip are bound the MEMS chip on organic substrate surface to and fix the VCSEL chip on organic substrate, be provided with link, first interconnected circuit and second interconnected circuit on the organic substrate, first interconnected circuit electric connection MEMS chip, second interconnected circuit electric connection VCSEL chip, and first interconnected circuit and second interconnected circuit all connect the link, the link is used for with external circuit electric connection. According to the invention, the MEMS chip is inversely arranged on the organic substrate, the VCSEL chip and the MEMS chip are packaged by adopting the Fanout structure, and the integration of the VCSEL chip and the MEMS chip can be realized and the whole volume of the laser chip packaging structure is reduced because other auxiliary structures such as a frame structure with larger volume and a ceramic substrate with thicker thickness are not required.

Description

Laser chip packaging structure and packaging method thereof
Technical Field
The invention relates to the technical field of chip packaging, in particular to a laser chip packaging structure and a packaging method thereof.
Background
The laser has unique optical characteristics, such as high monochromaticity, strong directivity and the like, so that the development speed of the laser device is faster and faster, and the application range is wider and wider. Particularly, due to the extremely strong directivity of the laser, the quality of a light spot can be kept within a certain distance without a lens, so that the laser becomes a preferred light source for bar code scanning.
In the bar code scanning process, besides a laser light source, a scanning device for scanning laser is also required, and the scanning device is generally implemented by using a Micro-Electro-mechanical systems (MEMS) galvanometer system.
However, the package structure obtained by combining the laser light source and the galvanometer system in the prior art is large in size.
Disclosure of Invention
In order to solve the above problems, the present invention provides a laser chip package structure and a package method thereof, which uses Fanout (fan-out) package to realize the package of MEMS chip and laser chip (VCSEL chip), thereby reducing the volume of the laser chip package structure.
In order to achieve the purpose, the invention provides the following technical scheme:
a laser chip package structure comprising:
the organic substrate comprises a first surface, a second surface and a through hole, wherein the first surface and the second surface are oppositely arranged, the through hole penetrates through the first surface and the second surface, and the first surface of the organic substrate is also provided with a connecting end which is used for being electrically connected with an external circuit;
the MEMS chip is reversely bonded on the first surface of the organic substrate and covers the through hole, and a vibrating mirror is arranged on the surface, facing the organic substrate, of the MEMS chip;
the VCSEL chip is fixed relative to the through hole and used for emitting laser to the surface of the galvanometer;
the transparent substrate is positioned on the second surface of the organic substrate and covers the through hole;
the organic substrate comprises a first interconnection circuit and a second interconnection circuit, the first interconnection circuit is electrically connected with the MEMS chip, the second interconnection circuit is electrically connected with the VCSEL chip, and the first interconnection circuit and the second interconnection circuit are both used for connecting the connecting ends.
Preferably, the transparent substrate further comprises a metal circuit, and the metal circuit is electrically connected to the second interconnection circuit.
Preferably, the VCSEL chip is disposed on the transparent substrate and electrically connected to the metal circuit.
Preferably, the VCSEL chip is disposed on a surface of the transparent substrate facing the organic substrate.
Preferably, the metal circuit further comprises a first conductive structure, and the VCSEL chip is electrically connected with the metal circuit through the first conductive structure.
Preferably, the first conductive structure is a wire, a conductive paste or a solder bump.
Preferably, the VCSEL chips are disposed on a surface of the transparent substrate facing away from the organic substrate.
Preferably, a center of a projection of the VCSEL chip on the surface of the transparent substrate overlaps a center of a projection of the MEMS chip on the transparent substrate.
Preferably, the VCSEL chip is disposed on the second surface of the organic substrate, and the emitting laser direction is away from the organic substrate.
Preferably, the VCSEL chip is electrically connected to the second interconnection circuit through a second conductive structure.
Preferably, the second conductive structure is a wire, a conductive paste or a solder bump.
Preferably, the laser device further comprises an optical system, wherein the optical system reflects laser light emitted by the VCSEL chip and departing from the organic substrate to a galvanometer surface on the first surface of the organic substrate.
Preferably, the transparent substrate is a glass substrate.
Preferably, the connection terminal is a bonding bump or a conductive pad.
Preferably, the organic substrate is a PCB or FPC board.
The present invention also provides a laser chip packaging method for forming the laser chip packaging structure described in any one of the above, the laser chip packaging method comprising:
providing an organic substrate, wherein the organic substrate comprises a first surface and a second surface which are oppositely arranged, and a through hole which penetrates through the first surface and the second surface, and the first surface of the organic substrate is also provided with a connecting end which is used for being electrically connected with an external circuit; the first interconnection circuit and the second interconnection circuit are positioned in the organic substrate and are used for being connected with the connecting end;
providing an MEMS chip, a VCSEL chip and a transparent substrate;
the MEMS chip is reversely bonded on the first surface of the organic substrate and covers the through hole, and the MEMS chip is electrically connected with the first interconnection circuit;
electrically connecting the VCSEL chip with the second interconnection circuit;
and mounting the transparent substrate on the second surface of the organic substrate and covering the through hole.
Preferably, the method further comprises the following steps: a metal circuit is disposed on the transparent substrate.
Preferably, the electrically connecting the VCSEL chip and the second interconnection circuit specifically includes:
binding the VCSEL chip on the transparent substrate, and electrically connecting the VCSEL chip and the metal circuit through a first conductive structure;
and electrically connecting the metal circuit on the transparent substrate with the second interconnection circuit on the organic substrate through the conductive paste.
Preferably, the electrically connecting the VCSEL chip and the second interconnection circuit specifically includes:
and binding the VCSEL chip to the second surface of the organic substrate through a second conductive structure, wherein the second conductive structure is electrically connected with the second interconnection circuit.
According to the technical scheme, the laser chip packaging structure provided by the invention comprises an organic substrate, an MEMS chip which is reversely bound on the surface of the organic substrate, and a VCSEL chip which is fixed on the organic substrate, wherein the organic substrate is provided with a connecting end, a first interconnection circuit and a second interconnection circuit, the first interconnection circuit is electrically connected with the MEMS chip, the second interconnection circuit is electrically connected with the VCSEL chip, the first interconnection circuit and the second interconnection circuit are both connected with the connecting end, and the connecting end is used for being electrically connected with an external circuit. The laser chip packaging structure provided by the invention is characterized in that the MEMS chip is inversely arranged on the organic substrate, the VCSEL chip and the MEMS chip are packaged by adopting the Fanout structure, and the electrical connection between the VCSEL chip and the MEMS chip and an external circuit can be realized by a circuit in the organic substrate by adopting the Fanout structure, so that other auxiliary structures such as a frame structure with larger volume and a ceramic substrate with thicker thickness are not needed, the integration of the VCSEL chip and the MEMS chip can be realized, and the whole volume of the laser chip packaging structure is reduced.
The invention also provides a laser chip packaging method, by which the laser chip packaging structure can be obtained, so that the integration level of packaging of the laser chip and the MEMS chip is higher, and the volume is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 shows the working principle of the interaction between the VCSEL chip 01 and the micro-galvanometer on the MEMS chip 02 to realize scanning;
fig. 2 is a schematic diagram of a laser chip package structure according to an embodiment of the present invention;
fig. 3 is a schematic diagram of the laser scanning principle when the centers of the VCSEL chip 11 and the MEMS chip 12 are not overlapped;
fig. 4 is a schematic view of another laser chip package structure according to an embodiment of the present invention;
fig. 5 is a schematic view of another laser chip package structure according to an embodiment of the present invention;
fig. 6 is a schematic view of another laser chip package structure according to an embodiment of the present invention;
fig. 7 is a schematic view of a laser chip package structure with an optical system disposed in the package structure according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of an implementation technique of an optical system according to an embodiment of the present invention;
fig. 9 is a schematic flowchart of a laser chip packaging method according to an embodiment of the present invention;
fig. 10-17 are schematic diagrams of process steps of a laser chip packaging method according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the prior art, please refer to fig. 1 for the detailed principle of barcode scanning in the process of barcode scanning, where fig. 1 is a working principle of scanning realized by the interaction between a VCSEL (Vertical Cavity Emitting Laser) chip 01 and a micro-galvanometer 021 on an MEMS chip 02; the micro galvanometer 021 is located in the middle area of the MEMS chip 02, and uses electromagnetic force as power to make the axis of the electrode of the micro galvanometer rotationally vibrate, so that the small mirror connected with the micro galvanometer vibrates therewith, and after receiving downward laser light sent by the VCSEL chip 01, the small mirror vibrates to deflect, so as to achieve the effect of reciprocating scanning, as shown in fig. 1, the micro galvanometer 021 deflects from a state L1 to a state L2, and the reflected laser light deflects along the direction a to realize scanning. Here, the galvanometer 021 is a two-dimensional scanning device, and can perform scanning in two directions simultaneously on one galvanometer, namely, in the direction indicated by the arrow a in fig. 1 and in the direction perpendicular to the paper surface shown in fig. 1 (the present invention is not shown).
In the prior art, the VCSEL chip is usually disposed directly above the MEMS chip, and the two are fixed in position by other auxiliary structures. The auxiliary structure comprises a ceramic substrate with larger thickness and a frame structure, wherein the ceramic substrate is used for bearing the MEMS chip, and the frame structure is used for ensuring the distance between the MEMS chip and the VCSEL chip. It should be noted that, because the VCSEL chip 01 and the MEMS chip 02 are disposed opposite to each other, and the VCSEL chip 01 has a certain area, during the laser scanning process, the VCSEL chip 01 can block a part of light reflected by the galvanometer, so that a certain blind area exists during the scanning process, and if the distance between the VCSEL chip 01 and the galvanometer on the MEMS chip 02 is shorter, the area of the formed blind area is larger. In order to avoid the scanning blind area being larger and influence the scanning result, the distance between the VCSEL chip 01 and the MEMS chip 02 in the prior art can be selected to be about 1 mm; in addition, the thickness of the MEMS chip 02, the thickness of the VCSEL chip, and the thickness of the ceramic substrate and the frame structure are added, so that the total packaging thickness of the laser chip is increased, and the size of the packaging structure of the laser chip is increased.
In order to solve the above problems, the present invention provides a laser chip package structure and a package method thereof, which uses Fanout (fan-out) package to realize the package of MEMS chip and laser chip (VCSEL chip), thereby reducing the volume of the laser chip package structure.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, the present application is described in further detail with reference to the accompanying drawings and the detailed description.
Referring to fig. 2, fig. 2 is a schematic view of a laser chip package structure according to an embodiment of the present invention, where the laser chip package structure includes: an organic substrate 16, wherein the organic substrate 16 includes a first surface 161 and a second surface 162 which are oppositely arranged, and a through hole T penetrating through the first surface 161 and the second surface 162, the first surface 161 of the organic substrate 16 is further provided with a connection terminal 19, and the connection terminal 19 is used for electrically connecting with an external circuit; the MEMS chip 12 is flip-chip bonded on the first surface 161 of the organic substrate 16 and covers the through hole T, and a vibrating mirror (not shown in the figure) is arranged on the surface of the MEMS chip 12 facing the organic substrate 16; the VCSEL chip 11 is fixed opposite to the through hole T and used for emitting laser to the surface of the galvanometer; a transparent substrate 13, wherein the transparent substrate 13 is located on the second surface 162 of the organic substrate 16 and covers the through hole T; the organic substrate 16 comprises a first interconnection circuit 17 and a second interconnection circuit 18, the first interconnection circuit 17 is electrically connected with the MEMS chip 12, the second interconnection circuit 18 is electrically connected with the VCSEL chip 11, and the first interconnection circuit 17 and the second interconnection circuit 18 are both used for connecting the connecting end 19.
It should be noted that, in this embodiment, the positions of the VCSEL chip 11 and the through hole T are relatively fixed, but the specific position of the VCSEL chip 11 is not limited, alternatively, in this embodiment, the VCSEL chip is fixed on the transparent substrate 13, and as for the specific position of the VCSEL chip 11 on the transparent substrate 13, the embodiment is not limited.
As shown in fig. 2, the VCSEL chip 11 in the present embodiment is disposed on the transparent substrate 13 at a position opposite to the MEMS chip 12. And, the center of the projection of the VCSEL chip 11 on the surface of the transparent substrate 13 overlaps with the center of the projection of the MEMS chip 12 on the transparent substrate 13. In other embodiments of the present invention, the centers of the VCSEL chip 11 and the MEMS chip 12 may also be arranged in a non-overlapping manner, as shown in fig. 3, which is a schematic diagram of a laser scanning principle when the centers of the VCSEL chip 11 and the MEMS chip 12 are arranged in a non-overlapping manner; when the galvanometer 121 in the MEMS chip 12 rotates from the state L1 'to the state L2', the reflected laser light is scanned in the B direction, and laser scanning can be similarly achieved.
In this embodiment, the transparent substrate 13 further includes a metal circuit 14, and the metal circuit 14 is electrically connected to the second interconnection circuit 18. The VCSEL chip 11 is electrically connected to the other end of the metal circuit 14, and the VCSEL chip 11 is connected to a second interconnect circuit 18 within the organic substrate 16 through the metal circuit 14 disposed on the transparent substrate 13.
The VCSEL chip 11 and the metal circuit 14 may be directly connected, as shown in fig. 2, or may be electrically connected by providing a first conductive structure 19, as shown in fig. 4, and the VCSEL chip 11 is electrically connected to the metal circuit 14 by the first conductive structure 19. The first conductive structure 19 in this embodiment can be a wire formed by wire bonding, as shown in fig. 4. But may also be a conductive paste or a solder bump, which is not limited in this embodiment. In this embodiment, the electrical connection relationship between the second interconnection circuit 18 and the metal circuit 14 is not limited, and optionally, in order to ensure a reliable electrical connection relationship between the second interconnection circuit 18 and the metal circuit 14, as shown in fig. 2 and 4, a welding point 15 is further disposed between the second interconnection circuit 18 and the metal circuit 14, and the welding point 15 reliably electrically connects the second interconnection circuit 18 and the metal circuit 14 together.
It should be noted that, in the laser chip package structure shown in fig. 2, the VCSEL chip 11 is disposed on the surface of the transparent substrate 13 facing the MEMS chip 12, so that the transparent substrate 13 not only can play a role of bearing the VCSEL chip 11, but also can package the VCSEL chip 11 in a cavity formed by the transparent substrate 13, the MEMS chip 12 and the organic substrate 16, so as to prevent external dust or ions from contaminating a galvanometer on the MEMS chip 12 and affecting a laser reflection function of the galvanometer.
However, for the case that the cleanliness of the use environment of the laser chip package structure is high or the case that a package material is subsequently provided, the laser chip package structure provided in the embodiment of the present invention may be further as shown in fig. 5, where fig. 5 is a schematic view of another laser chip package structure provided in the embodiment of the present invention; in this embodiment, the VCSEL chip 11 is disposed on a surface of the transparent substrate 13 facing away from the organic substrate 16. In this way, although the transparent substrate 13 only plays a role of carrying the VCSEL chips 11, since the VCSEL chips 11 are disposed on the surface of the transparent substrate 13 away from the organic substrate 16, the thickness of the transparent substrate 13 can be removed, compared with the package structure shown in fig. 2 or 4, which can further reduce the thickness of the package structure, and reduce the volume of the whole package structure.
Referring to fig. 2, fig. 4 and fig. 5, in an embodiment of the present invention, the MEMS chip 12 is inversely disposed on the first surface 161 of the organic substrate 16, but the specific inverse manner of the MEMS chip 12 is not limited in the embodiment of the present invention, and optionally, the inverse manner may be implemented by solder joint welding, meanwhile, the solder joint is electrically connected to the first interconnection circuit 17 disposed in the organic substrate 16, and the first interconnection circuit 17 is connected to the connection end 19 on the organic substrate 16 for electrically connecting with an external circuit, so as to implement control of the MEMS chip 12, and further control the rotation angle of the galvanometer, thereby implementing laser scanning.
It should be noted that, in this embodiment, the number of the connection terminals 19 disposed on the first surface of the organic substrate 16 is not limited, in this embodiment, although the first interconnection circuit 17 and the second interconnection circuit 18 are both connected to the connection terminals on the organic substrate 16, in this embodiment, the connection terminals 19 connected to the first interconnection circuit 17 and the second interconnection circuit 18 are different, and the connection terminals 19 are different in function, that is, in this embodiment, the connection terminals connected to the first interconnection circuit and the second interconnection circuit are different connection terminals, and are used for connecting different external control circuits to control the laser emission conditions of the galvanometer in the MEMS chip and the VCSEL chip respectively. Furthermore, the organic substrate 16 may be provided with a plurality of connection terminals for other purposes, which is not limited in this embodiment.
In the present invention, the positions of the VCSEL chip and the through hole T are relatively fixed, but the specific position of the VCSEL chip is not limited, optionally, in another embodiment of the present invention, the VCSEL chip is fixed on an organic substrate, as shown in fig. 6, a schematic view of another laser chip packaging structure provided for the embodiment of the present invention is shown, and the laser chip packaging structure includes:
the MEMS chip comprises a VCSEL chip 21, an MEMS chip 22, an organic substrate 26 and a transparent substrate 23, wherein a through hole T is formed in the organic substrate 26; the MEMS chip 22 is flip-mounted on one surface (i.e., the lower surface, referred to as the first surface in this embodiment) of the organic substrate 26 and covers the through hole T; the transparent substrate 23 is fixed to the other surface (i.e., the upper surface, referred to as a second surface in this embodiment) of the organic substrate 26, and covers the through hole T; and the VCSEL chip 21 is disposed on the surface of the organic substrate 26 on which the transparent substrate 23 is disposed.
In this embodiment, the VCSEL chip 21 is electrically connected to the second interconnection circuit 28 through the second conductive structure 24. The MEMS chip 22 is electrically connected to the connection terminals on the organic substrate 26 through the first interconnection circuits 27. The difference between this embodiment and the above embodiment is that the VCSEL chip 21 is disposed on the second surface of the organic substrate 26, and other structures, such as the flip structure of the MEMS chip 22 and the organic substrate 26, the connection manner of the first interconnection circuit 27, the second interconnection circuit 28, and the connection end, are the same.
Since the VCSEL chip 21 is disposed on the surface of the organic substrate 26, and the direction of the emitted laser of the VCSEL chip 21 is a direction away from the organic substrate 26, an optical system is further required to reflect the laser emitted from the VCSEL chip 21 to the surface of the MEMS chip 22, so that the galvanometer on the surface of the MEMS chip 22 reflects the laser, thereby implementing scanning.
In this embodiment, the specific arrangement position and manner of the optical system are not limited, and optionally, as shown in fig. 7, the optical system is disposed in the package structure, that is, the laser chip package structure further includes an optical system 29. The optical system 29 reflects the laser light emitted from the VCSEL chip 21 and directed away from the organic substrate 26 to the galvanometer surface on the first surface of the organic substrate 26. It should be noted that the optical system 29 only needs to reflect the laser light emitted from the VCSEL chip 21 and departing from the organic substrate 26 to the galvanometer surface on the first surface of the organic substrate 26, and the direction of the laser light reflected to the galvanometer surface is not limited in this embodiment, and may be incident perpendicular to the surface of the MEMS chip 22, or may form a certain included angle with the surface of the MEMS chip 22.
In this embodiment, optionally, the direction of the incident laser light reflected by the optical system 29 to the surface of the galvanometer on the first surface of the organic substrate 26 is perpendicular to the surface of the MEMS chip 22. Fig. 8 is a schematic diagram illustrating an implementation technique of an optical system according to an embodiment of the present invention; the optical system 29 includes two mirrors, and the two mirrors and the surface of the organic substrate 26 both form an included angle of 45 °, so that the laser emitted perpendicular to the organic substrate 26 is reflected toward the organic substrate 26 and then perpendicularly incident on the surface of the MEMS chip 22.
In the embodiment of the laser chip package structure, the material of the transparent substrate and the organic substrate is not limited, and optionally, the transparent substrate is a glass substrate or other transparent substrate with high light transmittance, and the organic substrate is a PCB substrate or an FPC substrate. The connection terminal on the organic substrate may be a solder bump or a conductive pad, and the specific selection may be set according to the actual situation, which is not limited in this embodiment.
According to the laser chip packaging structure provided by the embodiment of the invention, the MEMS chip is inversely arranged on the organic substrate, the VCSEL chip and the MEMS chip are packaged by adopting the Fanout structure, and the electrical connection between the VCSEL chip and the MEMS chip and an external circuit can be realized through a circuit in the organic substrate by adopting the Fanout structure for packaging, without other auxiliary structures such as a frame structure with larger volume and a ceramic substrate with thicker thickness, so that the integration of the VCSEL chip and the MEMS chip can be realized, and the whole volume of the laser chip packaging structure is reduced.
An embodiment of the present invention further provides a laser chip packaging method, configured to form a laser chip packaging structure according to any one of the above embodiments, where the laser chip packaging method is shown in fig. 9-17, where fig. 9 is a schematic flow chart of the laser chip packaging method, and fig. 10-17 are schematic process steps of the laser chip packaging method according to the embodiment of the present invention, and the laser chip packaging method includes:
s101: providing an organic substrate, wherein the organic substrate comprises a first surface and a second surface which are oppositely arranged, and a through hole which penetrates through the first surface and the second surface, and the first surface of the organic substrate is also provided with a connecting end which is used for being electrically connected with an external circuit; the first interconnection circuit and the second interconnection circuit are positioned in the organic substrate and are used for connecting the connecting ends;
as shown in fig. 10 and 11, fig. 10 is a schematic top view of the plate material 31, and in the subsequent step, after cutting, the plate material 31 is divided into a plurality of organic substrates 6. Fig. 11 is a schematic cross-sectional view taken along line CC' of fig. 10. Providing an organic substrate specifically includes:
providing a plate 31, wherein the plate 31 includes a plurality of packaging regions 32 arranged in an array, a cutting channel 30 is provided between adjacent packaging regions 32, and the packaging regions 32 include a first region D and a second region E surrounding the first region D. The first region D is used to form a via hole T in a subsequent process.
The package region 32 is provided with a wiring circuit and a connection terminal electrically connected to the wiring circuit; the wiring circuit includes a first interconnection circuit 7 for electrically connecting the MEMS chip with an external circuit and a second interconnection circuit 8 for electrically connecting the VCSEL chip with the external circuit, and a connection terminal 9.
Referring to fig. 12, a through hole T penetrating through the board 31 is formed in the first region D of each of the package regions 32.
In this embodiment, a specific process for forming the through hole T is not limited, and alternatively, the through hole T may be formed by a laser, a photolithography process, a wet etching process, a mechanical grinding process, or any other similar method. In an embodiment of the present application, a photoresist is first coated on the surface of the organic substrate 6, then a mask plate is disposed on the surface of the photoresist, the photoresist is patterned by using the mask plate as a mask, and the plate 31 is subjected to photolithography by using the remaining patterned photoresist as a mask, so as to form a through hole T penetrating through the plate 31 in the first area a of each encapsulation area 32.
S102: providing an MEMS chip, a VCSEL chip and a transparent substrate;
in this embodiment, the MEMS chip is a chip that has been manufactured and has a galvanometer and a solder joint formed on one surface of the MEMS chip.
The VCSEL chip is a VCSEL chip capable of emitting laser light after being connected to an external circuit.
S103: the MEMS chip is reversely bonded on the first surface of the organic substrate and covers the through hole, and the MEMS chip is electrically connected with the first interconnection circuit;
referring to fig. 13, the MEMS chip 2 is flipped by a flip-chip process, the mirror surface of the MEMS chip 2 is flipped onto the first surface 61 of the organic substrate 6 toward the through hole T, and the bonding pads on the MEMS chip 2 are electrically connected to the first interconnection circuits 7.
S104: electrically connecting the VCSEL chip with the second interconnection circuit;
in this embodiment, the specific manner of electrically connecting the VCSEL chip and the second interconnection circuit is not limited, and optionally, in an embodiment of the present invention, referring to fig. 14, the transparent substrate 3 is provided, and the metal circuit 4 is disposed on the transparent substrate 3.
Then, binding the VCSEL chip 1 on the transparent substrate 3, and electrically connecting the VCSEL chip 1 and the metal circuit 4 through a first conductive structure; in other embodiments of the present invention, the first conductive structure may also be a structure electrically connected by a wire or the like.
S105: and mounting the transparent substrate on the second surface of the organic substrate and covering the through hole.
Referring to fig. 15, the transparent substrate 3 is fixed on the second surface 62 of the organic substrate 6 and covers the through hole T. After the transparent substrate 3 is fixed on the organic substrate 6, the metal circuit 4 on the transparent substrate is electrically connected to the second interconnection circuit 8 on the organic substrate 6 by the conductive paste. In other embodiments of the present invention, the metal circuit 4 on the transparent substrate 3 may be electrically connected to the second interconnection circuit 8 in the organic substrate 6 through the solder joint 5, which is not limited in the embodiments of the present invention.
It should be noted that in another embodiment of the present invention, the VCSEL chip 1 may also be disposed on the second surface 62 of the organic substrate 6 instead of on the transparent substrate 3, where the transparent substrate 3 is provided only as a package substrate without a metal circuit disposed thereon.
Referring to fig. 16, the VCSEL chip 1 is disposed on the second surface 62 of the organic substrate 6 and electrically connected to the second interconnection circuit 8 through the second conductive structure 10. In this embodiment, the second conductive structure 10 is a conductive wire, and in other embodiments of the present invention, the second conductive structure may also be a conductive paste or a solder joint, which is not limited in this embodiment.
Finally, referring to fig. 17 again, the transparent substrate 3 for packaging is fixed on the second surface of the organic substrate 6, and covers the through hole T, so that the galvanometer on the MEMS chip 2 is packaged in the cavity formed by the organic substrate 6, the MEMS chip 2, and the transparent gradual change 3.
According to the laser chip packaging method provided by the embodiment of the invention, the laser chip packaging structure in the embodiment can be obtained, so that the packaging integration level of the laser chip and the MEMS chip is higher, and the volume is reduced.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or device. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (17)

1. A laser chip package structure, comprising:
the organic substrate comprises a first surface, a second surface and a through hole, wherein the first surface and the second surface are oppositely arranged, the through hole penetrates through the first surface and the second surface, the first surface of the organic substrate is also provided with a connecting end, and the connecting end is used for being electrically connected with an external circuit;
the MEMS chip is reversely bonded on the first surface of the organic substrate and covers the through hole, and a vibrating mirror is arranged on the surface, facing the organic substrate, of the MEMS chip;
the VCSEL chip is fixed relative to the through hole and used for emitting laser to the surface of the galvanometer;
the transparent substrate is positioned on the second surface of the organic substrate and covers the through hole;
the organic substrate comprises a first interconnection circuit and a second interconnection circuit, the first interconnection circuit is electrically connected with the MEMS chip, the second interconnection circuit is electrically connected with the VCSEL chip, and the first interconnection circuit and the second interconnection circuit are both used for connecting the connecting end;
the transparent substrate further comprises a metal circuit, and the metal circuit is electrically connected with the second interconnection circuit.
2. The laser chip package structure of claim 1, wherein the VCSEL chip is disposed on the transparent substrate and electrically connected to the metal circuit.
3. The laser chip package structure of claim 2, wherein the VCSEL chip is disposed on a surface of the transparent substrate facing the organic substrate.
4. The laser chip package structure of claim 3, further comprising a first conductive structure, wherein the VCSEL chip is electrically connected to the metal circuit through the first conductive structure.
5. The laser chip package structure of claim 4, wherein the first conductive structure is a wire, a conductive paste, or a solder bump.
6. The laser chip package structure of claim 2, wherein the VCSEL chip is disposed on a surface of the transparent substrate facing away from the organic substrate.
7. The laser chip package structure according to any one of claims 1 to 6, wherein a center of a projection of the VCSEL chip on the surface of the transparent substrate overlaps a center of a projection of the MEMS chip on the transparent substrate.
8. The laser chip package structure of claim 1, wherein the VCSEL chip is disposed on the second surface of the organic substrate with the lasing direction facing away from the organic substrate.
9. The laser chip package structure of claim 8, wherein the VCSEL chip is electrically connected to the second interconnect circuit through a second conductive structure.
10. The laser chip package structure of claim 9, wherein the second conductive structure is a wire, a conductive paste, or a solder bump.
11. The laser chip package structure according to any of claims 8-10, further comprising an optical system, wherein the optical system reflects laser light emitted from the VCSEL chip away from the organic substrate to a galvanometer surface located on the first surface of the organic substrate.
12. The laser chip package structure of claim 1, wherein the transparent substrate is a glass substrate.
13. The laser chip package structure of claim 1, wherein the connection end is a solder bump or a conductive pad.
14. The laser chip package structure of claim 1, wherein the organic substrate is a PCB or FPC board.
15. A laser chip packaging method for forming the laser chip packaging structure of any one of claims 1 to 14, the laser chip packaging method comprising:
providing an organic substrate, wherein the organic substrate comprises a first surface and a second surface which are oppositely arranged, and a through hole which penetrates through the first surface and the second surface, and the first surface of the organic substrate is also provided with a connecting end which is used for being electrically connected with an external circuit; the first interconnection circuit and the second interconnection circuit are positioned in the organic substrate and are used for being connected with the connecting end;
providing an MEMS chip, a VCSEL chip and a transparent substrate;
the MEMS chip is reversely bonded on the first surface of the organic substrate and covers the through hole, and the MEMS chip is electrically connected with the first interconnection circuit;
electrically connecting the VCSEL chip with the second interconnection circuit;
mounting the transparent substrate on the second surface of the organic substrate and covering the through hole;
further comprising:
a metal circuit is disposed on the transparent substrate.
16. The laser chip packaging method of claim 15, wherein the electrically connecting the VCSEL chip to the second interconnect circuit comprises:
binding the VCSEL chip on the transparent substrate, and electrically connecting the VCSEL chip and the metal circuit through a first conductive structure;
and electrically connecting the metal circuit on the transparent substrate with the second interconnection circuit on the organic substrate through the conductive paste.
17. The laser chip packaging method of claim 15, wherein the electrically connecting the VCSEL chip to the second interconnect circuit comprises:
and binding the VCSEL chip to the second surface of the organic substrate through a second conductive structure, wherein the second conductive structure is electrically connected with the second interconnection circuit.
CN201810972535.3A 2018-08-24 2018-08-24 Laser chip packaging structure and packaging method thereof Active CN109119885B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810972535.3A CN109119885B (en) 2018-08-24 2018-08-24 Laser chip packaging structure and packaging method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810972535.3A CN109119885B (en) 2018-08-24 2018-08-24 Laser chip packaging structure and packaging method thereof

Publications (2)

Publication Number Publication Date
CN109119885A CN109119885A (en) 2019-01-01
CN109119885B true CN109119885B (en) 2020-05-19

Family

ID=64860713

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810972535.3A Active CN109119885B (en) 2018-08-24 2018-08-24 Laser chip packaging structure and packaging method thereof

Country Status (1)

Country Link
CN (1) CN109119885B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111977609A (en) * 2020-08-28 2020-11-24 青岛歌尔智能传感器有限公司 Sensor packaging structure and sensor packaging process
CN112388155B (en) * 2020-12-01 2022-03-29 强一半导体（苏州）有限公司 MEMS probe laser etching device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6647036B1 (en) * 2000-12-06 2003-11-11 Xerox Corporation Integration and alignment of VCSEL's with MEMS using micromachining and flip-chip techniques
EP2775574A3 (en) * 2013-03-07 2014-11-05 Canon Kabushiki Kaisha Surface emitting laser and optical coherence tomography apparatus equipped with surface emitting laser
KR20160018869A (en) * 2013-07-03 2016-02-17 인피닉스, 인크. Wavelength-tunable vertical cavity surface emitting laser for swept source optical coherence tomography system
CN207625073U (en) * 2017-12-06 2018-07-17 北京万集科技股份有限公司 A kind of scanning semiconductor laser device based on MEMS
CN108063126A (en) * 2017-12-29 2018-05-22 苏州晶方半导体科技股份有限公司 The encapsulating structure and method for packing of a kind of chip

Also Published As

Publication number Publication date
CN109119885A (en) 2019-01-01

Similar Documents

Publication Publication Date Title
KR100789545B1 (en) Optical modulator module package using flip-chip mounting technology
US7078804B2 (en) Micro-electro-mechanical system (MEMS) package with side sealing member and method of manufacturing the same
US6888656B2 (en) Optical deflector
CN109119885B (en) Laser chip packaging structure and packaging method thereof
KR100855819B1 (en) MEMS's package having metal-sealing member
US10236243B2 (en) Electronic component, electronic module, manufacturing method therefor, and electronic apparatus
KR20050016112A (en) Micro electro mechanical systems device, method of manufacturing the same and micro electro mechanical systems module
WO2020088541A1 (en) Chip packaging structure
KR20050026487A (en) Camera module, holder for use in a camera module, camera system and method of manufacturing a camera module
JP2007073711A (en) Airtight sealing package and optical submodule
CN109103743B (en) Packaging structure and packaging method of laser chip
KR20050118065A (en) Mems package having a spacer for sealing and manufacturing method thereof
JP4969055B2 (en) Optical communication module
JP2016184068A (en) Electro-optic device, method for manufacturing electro-optic device, and electronic apparatus
US7029185B2 (en) Optical chip module and optical chip module device
JP6520299B2 (en) Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus
US10261311B2 (en) Electro-optic device, electro-optic unit, and electronic apparatus
JPH11295561A (en) Optical semiconductor device and manufacture therefor
JP2017181625A (en) Electro-optical device, electro-optical unit, and electronic apparatus
KR100725288B1 (en) Optical receiver improved in coupling structure between optical waveguide and light receiving element and coupling method thereof
JP2010087321A (en) Mems module
US7149023B2 (en) Optical scanner capable of flip-chip hermetic packaging
US7116456B2 (en) Light modulator module package
JP6699297B2 (en) Optical module and method of manufacturing optical module
KR102014781B1 (en) Scanning micro mirror package

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant