CN109116686B - 一种dmd多区域激光投影系统及曝光方法 - Google Patents
一种dmd多区域激光投影系统及曝光方法 Download PDFInfo
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- CN109116686B CN109116686B CN201811151981.4A CN201811151981A CN109116686B CN 109116686 B CN109116686 B CN 109116686B CN 201811151981 A CN201811151981 A CN 201811151981A CN 109116686 B CN109116686 B CN 109116686B
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- dmd
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000003287 optical effect Effects 0.000 claims abstract description 33
- 239000000126 substance Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 238000013507 mapping Methods 0.000 abstract description 12
- 238000003384 imaging method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
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Priority Applications (1)
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CN201811151981.4A CN109116686B (zh) | 2018-09-29 | 2018-09-29 | 一种dmd多区域激光投影系统及曝光方法 |
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CN201811151981.4A CN109116686B (zh) | 2018-09-29 | 2018-09-29 | 一种dmd多区域激光投影系统及曝光方法 |
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CN109116686A CN109116686A (zh) | 2019-01-01 |
CN109116686B true CN109116686B (zh) | 2021-05-07 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109960113A (zh) * | 2019-05-07 | 2019-07-02 | 苏州源卓光电科技有限公司 | 光刻机的投图系统及消除曝光过程中产生的拖影的方法 |
CN110456612A (zh) * | 2019-07-02 | 2019-11-15 | 苏州源卓光电科技有限公司 | 一种高效率投影光刻成像系统及曝光方法 |
CN110930316B (zh) * | 2019-10-24 | 2023-09-05 | 中山新诺科技股份有限公司 | 灰度图像的处理曝光方法、装置、系统和设备 |
CN111025858A (zh) * | 2019-12-27 | 2020-04-17 | 合肥众群光电科技有限公司 | 一种实现超高速曝光的设备 |
CN114734717B (zh) * | 2022-04-06 | 2023-07-14 | 深圳市先地图像科技有限公司 | 一种tiff图像曝光方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102207690A (zh) * | 2011-05-20 | 2011-10-05 | 合肥芯硕半导体有限公司 | 一种多slm曝光和数据处理方法 |
JP2014168040A (ja) * | 2013-01-30 | 2014-09-11 | Hitachi High-Technologies Corp | パターン形成方法及び装置、露光装置並びに表示用パネル製造方法 |
CN106023069A (zh) * | 2016-05-31 | 2016-10-12 | 西安嵌牛电子科技有限公司 | 一种基于视频流的多dmd曝光方法 |
CN107065441A (zh) * | 2016-12-31 | 2017-08-18 | 江苏九迪激光装备科技有限公司 | 一种激光直写数据处理系统及处理方法 |
CN108073043A (zh) * | 2016-11-07 | 2018-05-25 | 俞庆平 | 一种直写式丝网制版系统的光均匀性补偿方法 |
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2018
- 2018-09-29 CN CN201811151981.4A patent/CN109116686B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102207690A (zh) * | 2011-05-20 | 2011-10-05 | 合肥芯硕半导体有限公司 | 一种多slm曝光和数据处理方法 |
JP2014168040A (ja) * | 2013-01-30 | 2014-09-11 | Hitachi High-Technologies Corp | パターン形成方法及び装置、露光装置並びに表示用パネル製造方法 |
CN106023069A (zh) * | 2016-05-31 | 2016-10-12 | 西安嵌牛电子科技有限公司 | 一种基于视频流的多dmd曝光方法 |
CN108073043A (zh) * | 2016-11-07 | 2018-05-25 | 俞庆平 | 一种直写式丝网制版系统的光均匀性补偿方法 |
CN107065441A (zh) * | 2016-12-31 | 2017-08-18 | 江苏九迪激光装备科技有限公司 | 一种激光直写数据处理系统及处理方法 |
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Inventor after: Zhang Lei Inventor before: Liu Jinwu Inventor before: Zhang Shurong Inventor before: Xu Taopeng Inventor before: Zhang Lei |
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Address after: 215000 Room 102, building C5, Ting LAN lane, Suzhou Industrial Park, Jiangsu, China, 192 Patentee after: Yuanzhuo Micro Nano Technology (Suzhou) Co.,Ltd. Address before: 215000 Room 102, building C5, Ting LAN lane, Suzhou Industrial Park, Jiangsu, China, 192 Patentee before: ADVANCED MICRO OPTICS.INC |
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